Herein, for the first time, we report the generation and direct dark-field imaging of photonic jets (PJs) of single dielectric microspheres illuminated by evanescent waves generated using narrow and broadband radiation from a supercontinuum source. The evanescent waves are generated on the surface of a prism by creating the total internal reflection of light within it. The images are recorded by varying the radius of the microspheres, ranging from 10 to 18 μm. The experimental images obtained with supercontinuum, blue, green, and red light are compared. The length and width of the PJs are found in the order of micrometers due to the large size of the microspheres. The proposed technique is simple and efficient in visualizing PJs, allowing for the simultaneous estimation of their length and width. It can also allow us to visualize the photonic nanojets, which have dimensions in the order of nanometers, usually generated from single tiny dielectric microspheres under evanescent illumination. For comparison, the theoretical simulations are performed on the PJs generated from single dielectric microspheres under non-evanescent (direct) illumination. Finally, the possible applications of the PJs generated by evanescent waves in different microscopy systems are reported here.
{"title":"Generation and direct dark-field imaging of photonic jets of single dielectric microspheres under evanescent illumination","authors":"Sinrel Wanbe Koireng, Sibanisankar Sahoo, Venkata Ramanaiah Dantham","doi":"10.1007/s11082-025-08623-0","DOIUrl":"10.1007/s11082-025-08623-0","url":null,"abstract":"<div><p>Herein, for the first time, we report the generation and direct dark-field imaging of photonic jets (PJs) of single dielectric microspheres illuminated by evanescent waves generated using narrow and broadband radiation from a supercontinuum source. The evanescent waves are generated on the surface of a prism by creating the total internal reflection of light within it. The images are recorded by varying the radius of the microspheres, ranging from 10 to 18 μm. The experimental images obtained with supercontinuum, blue, green, and red light are compared. The length and width of the PJs are found in the order of micrometers due to the large size of the microspheres. The proposed technique is simple and efficient in visualizing PJs, allowing for the simultaneous estimation of their length and width. It can also allow us to visualize the photonic nanojets, which have dimensions in the order of nanometers, usually generated from single tiny dielectric microspheres under evanescent illumination. For comparison, the theoretical simulations are performed on the PJs generated from single dielectric microspheres under non-evanescent (direct) illumination. Finally, the possible applications of the PJs generated by evanescent waves in different microscopy systems are reported here.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-12DOI: 10.1007/s11082-025-08599-x
Ghazi Aman Nowsherwan
This study provides a detailed investigation into the structural, electronic, optical, and photovoltaic properties of the lead-free double perovskite Cs2NaBiI6 by integrating DFT, multi-platform device simulations (SCAPS-1D, wxAMPS, and COMSOL), and data-driven machine learning modeling. DFT calculations confirm a stable cubic Fm̅3m phase with a lattice constant of 12.586 Å, and energy bandgap of 2.20 eV, indicating strong optical absorption in the visible region. The electronic band analysis reveals a lighter electron effective mass (mₑ = 0.617 m₀) and higher mobility (un = 28.5 cm2/V·s) compared with that of holes (mₕ = 1.26 mo, uh = 14.0 cm2/V·s), confirming electron-dominated transport. The effective density of states at 300 K was found to be Nc = 1.21 × 1019 cm−3 and Nv = 3.54 × 1019 cm−3. SCAPS-1D device simulation of the optimized AZO/Cs2NaBiI6/CuI configuration achieved a power conversion efficiency (PCE) of 23.31% with Voc = 1.23 V, Jsc = 21.80 mA/cm2, and fill factor (FF) = 86.63%. Further optimization of the absorber thickness (800 nm), defect density (1015 cm−3), and interface parameters resulted in an efficiency enhancement of 25.22%. Cross-validation with wxAMPS and COMSOL showed excellent agreement, confirming the model’s robustness. Machine learning-based regression models (Linear, SVM, Random Forest, and XGBoost) were trained on simulation datasets; XGBoost achieved superior accuracy (R2 ≈0.9993, MSE = 0.010) for PCE prediction. Feature-importance analysis identified defect density, doping concentration, and active layer thickness as the most critical determinants of PV performance. These combined theoretical, simulation, and machine learning findings establish Cs2NaBiI6 as a high-potential, and environmentally benign material for next-generation PSCs.
{"title":"Unraveling the photovoltaic behavior of Cs2NaBiI6 double perovskite: a combined DFT, SCAPS-1D, wxAMPS, COMSOL and machine learning approach","authors":"Ghazi Aman Nowsherwan","doi":"10.1007/s11082-025-08599-x","DOIUrl":"10.1007/s11082-025-08599-x","url":null,"abstract":"<div><p>This study provides a detailed investigation into the structural, electronic, optical, and photovoltaic properties of the lead-free double perovskite Cs<sub>2</sub>NaBiI<sub>6</sub> by integrating DFT, multi-platform device simulations (SCAPS-1D, wxAMPS, and COMSOL), and data-driven machine learning modeling. DFT calculations confirm a stable cubic Fm̅<sub>3</sub>m phase with a lattice constant of 12.586 Å, and energy bandgap of 2.20 eV, indicating strong optical absorption in the visible region. The electronic band analysis reveals a lighter electron effective mass (mₑ = 0.617 m₀) and higher mobility (u<sub>n</sub> = 28.5 cm<sup>2</sup>/V·s) compared with that of holes (mₕ = 1.26 m<sub>o</sub>, u<sub>h</sub> = 14.0 cm<sup>2</sup>/V·s), confirming electron-dominated transport. The effective density of states at 300 K was found to be Nc = 1.21 × 10<sup>19</sup> cm<sup>−3</sup> and Nv = 3.54 × 10<sup>19</sup> cm<sup>−3</sup>. SCAPS-1D device simulation of the optimized AZO/Cs<sub>2</sub>NaBiI<sub>6</sub>/CuI configuration achieved a power conversion efficiency (PCE) of 23.31% with Voc = 1.23 V, Jsc = 21.80 mA/cm<sup>2</sup>, and fill factor (FF) = 86.63%. Further optimization of the absorber thickness (800 nm), defect density (10<sup>15</sup> cm<sup>−3</sup>), and interface parameters resulted in an efficiency enhancement of 25.22%. Cross-validation with wxAMPS and COMSOL showed excellent agreement, confirming the model’s robustness. Machine learning-based regression models (Linear, SVM, Random Forest, and XGBoost) were trained on simulation datasets; XGBoost achieved superior accuracy (R<sup>2</sup> ≈0.9993, MSE = 0.010) for PCE prediction. Feature-importance analysis identified defect density, doping concentration, and active layer thickness as the most critical determinants of PV performance. These combined theoretical, simulation, and machine learning findings establish Cs<sub>2</sub>NaBiI<sub>6</sub> as a high-potential, and environmentally benign material for next-generation PSCs.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-09DOI: 10.1007/s11082-025-08603-4
Xunyu Guo, Zhaoyang Shen, Jun Zhang
This paper proposes a graphene-based absorbing metasurface operating in the terahertz (THz) range, featuring switchable and tunable frequency bands. By applying a bias voltage to adjust the Fermi level of graphene, two distinct operating states can be achieved. When Ef = 1.1 eV, the absorption exceeds 90% within 2.8–8.7 THz; when Ef = 0.08 eV, strong absorption persists across 0.1–4.1 THz. In both frequency bands, the metasurface exhibits good impedance matching with free space. Furthermore, analysis using the phase cancellation metric confirms that the asymmetric configuration of the dielectric substrate is a key factor for broadband impedance matching. Based on the Drude model of graphene and the dispersion relation of surface waves, the observed blue shift in absorption with varying Fermi levels is explained.The metasurface maintains high absorption for both TE and TM waves under wide incident angles at Ef = 1.1 eV and Ef = 0.08 eV, achieving efficient absorption even at an incident angle of 60°. It also shows polarization insensitivity. The absorption mechanisms under the two operating states are analyzed using the equivalent circuit model and multiple interference theory, respectively, and the results are consistent with the simulations.The electric and magnetic field distributions further clarify the mechanism behind the efficient broadband absorption. In terms of fabrication and experimental design, reasonable improvements have been made based on existing strategies. Finally, a comparison with previous works demonstrates that the proposed metasurface achieves an integrated capability of dual-band switchability, tunability, and ultra-broadband absorption, showing great potential for applications in THz electromagnetic shielding, communication, and related fields.
{"title":"Dynamically tunable dual-band graphene metasurface for terahertz absorption","authors":"Xunyu Guo, Zhaoyang Shen, Jun Zhang","doi":"10.1007/s11082-025-08603-4","DOIUrl":"10.1007/s11082-025-08603-4","url":null,"abstract":"<div><p>This paper proposes a graphene-based absorbing metasurface operating in the terahertz (THz) range, featuring switchable and tunable frequency bands. By applying a bias voltage to adjust the Fermi level of graphene, two distinct operating states can be achieved. When <i>E</i><sub><i>f</i></sub> = 1.1 eV, the absorption exceeds 90% within 2.8–8.7 THz; when <i>E</i><sub><i>f</i></sub> = 0.08 eV, strong absorption persists across 0.1–4.1 THz. In both frequency bands, the metasurface exhibits good impedance matching with free space. Furthermore, analysis using the phase cancellation metric confirms that the asymmetric configuration of the dielectric substrate is a key factor for broadband impedance matching. Based on the Drude model of graphene and the dispersion relation of surface waves, the observed blue shift in absorption with varying Fermi levels is explained.The metasurface maintains high absorption for both TE and TM waves under wide incident angles at <i>E</i><sub><i>f</i></sub> = 1.1 eV and <i>E</i><sub><i>f</i></sub> = 0.08 eV, achieving efficient absorption even at an incident angle of 60°. It also shows polarization insensitivity. The absorption mechanisms under the two operating states are analyzed using the equivalent circuit model and multiple interference theory, respectively, and the results are consistent with the simulations.The electric and magnetic field distributions further clarify the mechanism behind the efficient broadband absorption. In terms of fabrication and experimental design, reasonable improvements have been made based on existing strategies. Finally, a comparison with previous works demonstrates that the proposed metasurface achieves an integrated capability of dual-band switchability, tunability, and ultra-broadband absorption, showing great potential for applications in THz electromagnetic shielding, communication, and related fields.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}