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Tailoring the structural and optical properties of sulphur doped g-C3N4 nanostructures and maximizing their photocatalytic performance via controlling carbon content 定制掺硫 g-C3N4 纳米结构的结构和光学特性,并通过控制碳含量最大限度地提高其光催化性能
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-23 DOI: 10.1007/s11082-024-07798-2
Abdullah S. Alshammari, Mansour Mohamed, Mohamed Bouzidi, Fahad Abdulaziz

Carbon based materials are highly promising materials for environmental applications. In the current study, sulphur doped graphite like carbon nitride (S-g-C3N4) samples were prepared through thermal polymerization of thiourea at different conditions. The carbon content in the prepared samples was controlled by varying the calcination temperature and calcination time and its effect on the properties of the samples was investigated. The XRD studies confirmed the formation of g-C3N4 while the SEM investigations were performed to monitor the morphology transformation as a function of the preparation conditions. Changing the preparation temperature was found to strongly impact the carbon content in the g-C3N4 nanostructures and consequently their morphological and optical properties including their band gap and photoluminescence characteristics. Additionally, varying the calcination time was found to play a role in modifying the properties of the samples but with slightly less effect than that of the calcination temperature. These parameters were utilized to enhance the photocatalytic performance for water treatment applications. The findings of the study show that engineering the composition of S doped g-C3N4 samples by combining the effects of various preparation conditions could be effectively utilized to enhance the properties of g-C3N4 and its performance in many vital applications.

碳基材料是极具环境应用前景的材料。本研究通过不同条件下的硫脲热聚合制备了掺硫石墨氮化碳(S-g-C3N4)样品。通过改变煅烧温度和煅烧时间来控制制备样品中的碳含量,并研究其对样品特性的影响。XRD 研究证实了 g-C3N4 的形成,而 SEM 研究则监测了形貌随制备条件的变化。研究发现,改变制备温度会极大地影响 g-C3N4 纳米结构中的碳含量,进而影响其形态和光学特性,包括其带隙和光致发光特性。此外,改变煅烧时间也会改变样品的特性,但影响程度略低于煅烧温度。利用这些参数可以提高光催化性能,用于水处理应用。研究结果表明,结合各种制备条件的影响来设计掺杂 S 的 g-C3N4 样品的组成,可以有效地提高 g-C3N4 的特性及其在许多重要应用中的性能。
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引用次数: 0
A coupled localization method for shot photoelectric sensors based on an improved bat optimization algorithm 基于改进的蝙蝠优化算法的射电光电传感器耦合定位方法
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-23 DOI: 10.1007/s11082-024-07772-y
Menghao Lin, Yang Liu, Weiyi Chen, Tianle Wang, Jinda Lu, Zewei Li

To realize comprehensive, accurate, and real-time positioning of target objects, and to overcome the problems of insufficient positioning accuracy and susceptibility to interference that a single sensor may face in complex environments, we propose a coupled positioning method for radio photoelectric sensors based on an improved bat optimization algorithm. After extracting the laser point cloud plane of the radio photoelectric sensor, a high-precision control field is established based on it. Based on the control points in the high-precision control field of the shooting photoelectric sensor, an equation for the plane parameters of the shooting photoelectric sensor is established. The optimization objective function of the shooting photoelectric sensor plane equation is established according to the unknown parameters of the plane equation and rotation matrix. Then, the bat optimization algorithm, which is improved by introducing a second-order oscillation link, is used to optimize and solve the optimization objective function of the shooting photoelectric sensor plane equation. The calibration results of the shooting photoelectric sensor plane parameters are obtained. The power function is used to couple and fit the calibration results of the multiple plane parameters of the shooting photoelectric sensor, and the coupling positioning result of the shooting laser sensor is obtained. The positioning accuracy is improved through multi-sensor collaboration. Experiments show that this method can effectively extract the laser point cloud plane of a radio photoelectric sensor, realize its laser plane parameter calibration, and accurately locate the target in space with a strong application effect.

为了实现对目标对象的全面、准确、实时定位,克服单一传感器在复杂环境中可能面临的定位精度不够、易受干扰等问题,我们提出了一种基于改进的蝙蝠优化算法的无线电光电传感器耦合定位方法。提取无线电光电传感器的激光点云平面后,在此基础上建立高精度控制场。根据射电光电传感器高精度控制场中的控制点,建立射电光电传感器平面参数方程。根据平面方程的未知参数和旋转矩阵,建立射击光电传感器平面方程的优化目标函数。然后,采用引入二阶振荡环节改进的蝙蝠优化算法对射击光电传感器平面方程的优化目标函数进行优化求解。得到了射击光电传感器平面参数的校准结果。利用幂函数对射击光电传感器多个平面参数的校准结果进行耦合拟合,得到射击激光传感器的耦合定位结果。通过多传感器协作,提高了定位精度。实验表明,该方法能有效提取射电光电传感器的激光点云平面,实现其激光平面参数标定,准确定位空间目标,具有很强的应用效果。
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引用次数: 0
A high-performance biosensor based on one-dimensional photonic crystal for the detection of cancer cells 基于一维光子晶体的用于检测癌细胞的高性能生物传感器
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-23 DOI: 10.1007/s11082-024-07677-w
Md. Faysal Nayan, Md. Arif Raihan, Mahamudul Hassan Fuad, Numayer Andalib Zaman, Tanvir Ahmed, Russel Reza Mahmud

In this study, we present a novel, highly sensitive, and compact one-dimensional (1D) binary photonic crystal biosensor designed for real-time detection of malignant cells, including breast, cervical, and basal cancer cells. It utilizes a GaAs/MgF2 multilayer photonic crystal with a central defect layer, which creates a resonant peak within the photonic band gap. Introducing different cancerous cell samples into the defect layer causes a shift in the resonant mode position, which correlates with the refractive index changes of the samples. Using the transfer matrix method (TMM), we analyzed the spectral properties of the structure. We investigated the effects of incident angle, defect thickness, and the number of periods on the transmittance of TE waves. Additionally, this article investigated the performance comparison between TE and TM modes. To achieve the highest sensitivity in our design, we have discussed the procedure for optimizing the biosensor parameters. At these optimized conditions, the biosensor achieves a sensitivity of 2564.83 nm/RIU, a quality factor of 2979.317, and a figure of merit (FOM) of 3612.175 RIU−1. To highlight the novelty of our work, we have compared our results with previous research in photonic biosensing, demonstrating significant improvements in sensitivity and performance.

在这项研究中,我们提出了一种新型、高灵敏度和紧凑型一维(1D)二元光子晶体生物传感器,设计用于实时检测恶性细胞,包括乳腺癌、宫颈癌和基底癌细胞。它采用了具有中心缺陷层的砷化镓/MgF2 多层光子晶体,在光子带隙内形成了一个共振峰。将不同的癌细胞样本引入缺陷层会导致共振模式位置的移动,这与样本的折射率变化相关。我们使用传递矩阵法(TMM)分析了该结构的光谱特性。我们研究了入射角、缺陷厚度和周期数对 TE 波透射率的影响。此外,本文还研究了 TE 和 TM 模式的性能比较。为了在设计中实现最高灵敏度,我们讨论了优化生物传感器参数的程序。在这些优化条件下,生物传感器的灵敏度达到了 2564.83 nm/RIU,品质因数为 2979.317,优点系数 (FOM) 为 3612.175 RIU-1。为了突出我们工作的新颖性,我们将我们的成果与之前的光子生物传感研究进行了比较,结果表明我们的灵敏度和性能都有了显著提高。
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引用次数: 0
Hydrostatic pressure and temperature effects on the electronic localized states in (textrm{ZnO} / textrm{Zn}_{1-textrm{x}} textrm{Mg}_{textrm{x}} textrm{O}) multi-quantum wells 静水压力和温度对(textrm{ZnO} / textrm{Zn}_{1-textrm{x}})电子局部态的影响/ textrm{Zn}_{1-textrm{x}}textrm{Mg}_{textrm{x}}多量子井
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-23 DOI: 10.1007/s11082-024-06340-8
Abdelkader Baidri, Fatima Zahra Elamri, Farid Falyouni, Driss Bria

Using the interface response theory formalism, we present a theoretical study on the effect of hydrostatic pressure and temperature on the behavior of localized electronic states and eigenstates of a new MQWs consisting of two semiconductors: (textrm{ZnO}) as a well’s material and (textrm{Zn}_{1-textrm{x}} textrm{Mg}_{textrm{x}} textrm{O}) as a barrier material. We found that the concentration, the thickness of the defect layer, the pressure, and the temperature have a remarkable effect on the states that appear in the gaps. We observe that the increase in the hydrostatic pressure, and the thickness of the defect layer induce a shift of the states towards the lower energies. On the other hand, the increase in the temperature, and the penetration of the defect layer induce a notable shift towards the higher energies. These results give us the ability to modify and regulate the states that manifest in the inner bands by changing the parameters of the defective layer or the exposure of the system to external perturbations. These electronic states are of practical interest for the characterization of electronic properties of thin film materials and can be the basis for new electronic and optoelectronic devices. Among the most important results in our work, we find that the use of a MQWs of thickness (textrm{d}_{1}=textrm{d}_{2}=40 mathrm {~A}^{circ }) and a percentage of (25 %) of Mg for the barrier material, with the introduction of a geomaterial defect in the 5th well of our system, There is the appearance of a single defect state that has a higher sensitivity than a material or geomaterial defect, such as (textrm{S}=0.349, textrm{meV} / textrm{Kbar}) for pressure variation and (textrm{S}=0.8447,textrm{meV} / ^{circ } textrm{K}) for temperature variation, which allows the use of this structure as an active layer of a pressure or temperature sensor.

我们利用界面响应理论形式主义,从理论上研究了静水压力和温度对由两种半导体组成的新型 MQWs 的局部电子态和特征态行为的影响:(textrm{ZnO})作为阱材料,(textrm{Zn}_{1-textrm{x}} textrm{Mg}_{textrm{x}} textrm{O})作为势垒材料。我们发现,缺陷层的浓度、厚度、压力和温度对间隙中出现的状态有显著影响。我们观察到,静水压力和缺陷层厚度的增加会导致态向低能移动。另一方面,温度的升高和缺陷层的穿透力会导致态向高能量方向明显移动。这些结果使我们有能力通过改变缺陷层的参数或使系统暴露于外部扰动来改变和调节内带中的态。这些电子状态对于表征薄膜材料的电子特性具有实际意义,并可作为新型电子和光电设备的基础。在我们工作中最重要的结果中,我们发现使用厚度为 (textrm{d}_{1}=textrm{d}_{2}=40 mathrm {~A}^{circ }) 的 MQWs 和百分比为 (25 %) 的 Mg 作为阻挡材料、在我们系统的第 5 个井中引入地球材料缺陷后,会出现比材料或地球材料缺陷具有更高灵敏度的单一缺陷状态,如(textrm{S}=0.349, textrm{meV} / textrm{Kbar}) 表示压力变化,(textrm{S}=0.8447, textrm{meV} / ^{circ } textrm{K})表示温度变化,这使得这种结构可以用作压力或温度传感器的有源层。
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引用次数: 0
High sensitivity of a perfect absorber based on octagonal-star and circular ring patterned graphene metasurface 基于八角星和圆环图案石墨烯元表面的完美吸收器的高灵敏度
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-23 DOI: 10.1007/s11082-024-07779-5
Kaiqiang Cao, Zongnian Lu, Jukun Liu, Jiali Yao, Hongxiang Dai, Jiaqi Ju, Hongwei Zhao

This study presents a triple-band terahertz tunable perfect absorber designed with an octagonal-star and circular ring monolayer graphene metasurface, noted for its tunability, polarization insensitivity, and high sensitivity. The graphene absorber was simulated using the finite element method and validated through impedance matching. Simulation results reveal three perfect absorption peaks at 5.5, 7.87, and 9.25 THz, with absorption rates reaching approximately 99% at 7.87 and 9.25 THz. Variations in the dielectric layer material, along with adjustments to the structural and intrinsic graphene parameters, were analyzed to optimize the efficiency of the triple-band absorption peaks. The simulations show that the structure’s high symmetry provides incident and polarization insensitivity, maintaining absorption rates above 98% over a broad range of incident and azimuth angles. The device’s sensing performance was evaluated by varying the ambient refractive index, achieving a maximum sensitivity (S) of 5.329 THz/RIU. These results indicate that this high-sensitivity sensor holds significant potential for applications in sensing, tunable spectral detection, and environmental monitoring.

本研究介绍了一种三波段太赫兹可调谐完美吸收器,该吸收器采用八角星形和环形单层石墨烯元表面设计,以其可调谐性、偏振不敏感性和高灵敏度而著称。利用有限元法对石墨烯吸收器进行了仿真,并通过阻抗匹配进行了验证。模拟结果显示,在 5.5、7.87 和 9.25 太赫兹处有三个完美的吸收峰,在 7.87 和 9.25 太赫兹处的吸收率约为 99%。我们分析了介电层材料的变化以及石墨烯结构和内在参数的调整,以优化三波段吸收峰的效率。模拟结果表明,该结构的高度对称性提供了入射和偏振不敏感性,在广泛的入射角和方位角范围内都能保持 98% 以上的吸收率。通过改变环境折射率评估了该器件的传感性能,其最大灵敏度 (S) 达到 5.329 THz/RIU。这些结果表明,这种高灵敏度传感器在传感、可调谐光谱检测和环境监测方面具有巨大的应用潜力。
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引用次数: 0
Manipulation of light via high sensitivity charge sensors and a parametric amplifier in a hybrid cavity optomechanical system 通过混合腔光机电系统中的高灵敏度电荷传感器和参量放大器操纵光线
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-23 DOI: 10.1007/s11082-024-07744-2
Abdul Wahab, Muqaddar Abbas, Naeem Akhtar, Xiaosen Yang, Yuanping Chen

In this study, we theoretically investigate the optical response characteristics of an output probe field in a hybrid double-cavity optomechanical system, which consists of a gain cavity, a charged object, along with a passive cavity that is made up of an optical parametric amplifier (OPA). There is a change from bistability to tristability when OPA and the charged parts are included. The combined impacts of OPA, gain-loss parameters, and coupling strength may be used to manipulate optical transmission rates as well as optical second-order sideband (OSS) efficiency. We further demonstrate how boosting the number of charges may significantly improve OSS efficiency. Specifically, we show that by modifying system settings, one may transition from slow to fast light or vice versa. Our findings indicate a suitable platform for improving or steering optomechanically generated transparency devices, with potential applications in optical communications, precise measurement, storage, and sensitive technology.

在这项研究中,我们从理论上研究了混合双腔光机电系统中输出探针场的光学响应特性,该系统由一个增益腔、一个带电体和一个由光参量放大器(OPA)组成的被动腔组成。当包含 OPA 和带电部分时,双稳态性将变为三稳态性。OPA、增益损耗参数和耦合强度的综合影响可用于操纵光传输速率和光二阶边带(OSS)效率。我们进一步展示了增加电荷数量如何显著提高 OSS 效率。具体来说,我们表明,通过修改系统设置,可以实现从慢速光到快速光的过渡,反之亦然。我们的发现为改进或引导光机械产生的透明装置提供了一个合适的平台,有望应用于光通信、精确测量、存储和敏感技术领域。
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引用次数: 0
Effect of individual atmospheric parameters on beam spreading of higher-order Gaussian beam 单个大气参数对高阶高斯光束传播的影响
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-23 DOI: 10.1007/s11082-024-07866-7
Mukesh kumar, Arpit Khandelwal, Syed Azeemuddin

The beam spreading is essential for evaluating the higher-order Gaussian beam when it propagates through atmospheric turbulence. In this paper, we investigate the impact of individual atmospheric parameters such as jitter, turbulence, wind speed, and thermal blooming on beam spreading of Hermite Gaussian (HG), and Laguerre Gaussian (LG) beams. We also examine spot size variations due to beam quality on various HG and LG modes. It is seen that the impact of spreading caused by beam quality and turbulence is higher than that of jitter, wind speed, and thermal blooming. As the mode order increases, the effect of turbulence strength increases, leading to more spread for HG and LG beams. Spreading due to diffraction and beam quality on higher mode LG beam is higher than the HG beam in different modes. Beam spreading due to thermal blooming for the lower mode is higher compared to the higher mode for LG and HG beams. The sensitivity of higher mode LG beams to turbulence distortions is greater than HG beams as they experience more significant fractional increases in their spot size due to turbulence. The combined beam spread for the Laguerre Gaussian beam is larger than the Hermite Gaussian beam. This paper aims to understand better individual beam spreading in the atmosphere and its impact on the overall performance of higher-order laser propagation to develop optimized laser systems.

当高阶高斯光束在大气湍流中传播时,光束展宽对评估高阶高斯光束至关重要。在本文中,我们研究了抖动、湍流、风速和热开花等大气参数对赫米特高斯(HG)和拉盖尔高斯(LG)光束展宽的影响。我们还研究了各种 HG 和 LG 模式光束质量引起的光斑大小变化。结果表明,光束质量和湍流造成的散射影响高于抖动、风速和热膨胀的影响。随着模式阶数的增加,湍流强度的影响也随之增加,从而导致 HG 和 LG 波束产生更大的传播。在不同模式下,高模 LG 光束因衍射和光束质量而产生的波及范围均大于 HG 光束。对于 LG 和 HG 光束来说,低模式热膨胀引起的光束扩散比高模式要大。高模式 LG 光束对湍流畸变的敏感度高于 HG 光束,因为湍流会使它们的光斑尺寸出现更显著的分数级增长。拉盖尔高斯光束的综合光束散布大于赫米特高斯光束。本文旨在更好地理解大气中的单个光束扩散及其对高阶激光传播整体性能的影响,从而开发出优化的激光系统。
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引用次数: 0
Tuning the efficiency of KBr/PVA solid polymer electrolyte based dye-sensitized solar cell using electron irradiation 利用电子辐照调节基于 KBr/PVA 固体聚合物电解质的染料敏化太阳能电池的效率
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-23 DOI: 10.1007/s11082-024-06956-w
B. K. Mahantesha, V. Ravindrachary, L. Rashmi, R. Padmakumari, Ganesh Sanjeev, V. C. Petwal

Effect of 10 MeV Electron irradiation on Dye-Sensitized Solar cell Efficiency based on KBr/PVA Solid Polymer Electrolyte (SPE) was studied using various techniques. Raman and XPS studies reveals that the irradiation affects the micro-structure/surface chemistry and is attributed to the crosslinking, chain scission, the free radical formation and carbonization induced by irradiation within the samples. The FESEM and AFM studies shows the evolution of elevated square stage like structure and results into amorphization of the SPE at a higher irradiation dose. These structural modifications are reflected in the form of enhancement of dielectric and conductivity properties of the SPE with irradiation dose. These results suggests that the irradiation creates the complexes within the sample and forms hydrogen depleted carbon network within the polymeric matrix. As a result of this modification the electrical conductivity increases with irradiation dose and the maximum conductivity of 3.42 × 10–2 S/cm is observed for 300 kGy at 373 K temperature. The electrical measurements suggests that the modified conductivity results follows Jonscher’s power law for all the samples. Using the pristine and 300 kGy dose irradiated SPE samples the dye-sensitized solar cell (DSSC) was fabricated and the efficiency of the same was studied.

使用各种技术研究了 10 MeV 电子辐照对基于 KBr/PVA 固体聚合物电解质 (SPE) 的染料敏化太阳能电池效率的影响。拉曼和 XPS 研究表明,辐照会影响微观结构/表面化学性质,这归因于辐照在样品内部引起的交联、链裂解、自由基形成和碳化。FESEM 和 AFM 研究表明,在较高的辐照剂量下,固相辐照膜的结构会演变成高架方台状,并导致固相辐照膜的非晶化。随着辐照剂量的增加,SPE 的介电性能和导电性能也随之增强。这些结果表明,辐照在样品中产生了络合物,并在聚合物基质中形成了氢贫碳网络。由于这种改性,电导率随辐照剂量的增加而增加,在 373 K 温度下,300 kGy 的最大电导率为 3.42 × 10-2 S/cm。电学测量结果表明,所有样品的改性电导率结果都遵循琼雪幂律。利用原始样品和经过 300 kGy 剂量辐照的 SPE 样品制作了染料敏化太阳能电池 (DSSC),并对其效率进行了研究。
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引用次数: 0
Strain modified nano-scale Ge/Ge0.98Sn0.02 exotic pin photo-sensor array for IR sensing: theoretical reliability and experimental feasibility studies 用于红外传感的应变修饰纳米级 Ge/Ge0.98Sn0.02 异形引脚光传感器阵列:理论可靠性和实验可行性研究
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-21 DOI: 10.1007/s11082-024-07110-2
Bias Bhadra, Suchismita Chinara, Abhijit Kundu

In this paper, the superiority of Ge/Ge0.98Sn0.02asymmetrical supper lattice structure based vertically doped nano-scale pin photo-sensor under operating wavelength of 1200 nm to 2200 nm is reported. The authors have developed non-linear Strain Modified Quantum-Corrected Drift–Diffusion (SMQCDD) model for analyzing the electrical and optical characteristics of the photo-sensor. The inclusion of a small amount of Sn (2%) into the pure Ge material creates in-plane bi-axial strain in the intrinsic region (i-region) of the device. This results in increases in the value of the out-plane mobility of the charge particles. As a result, the overall performance of the photo-sensor enhances significantly. The authors have used in-plane induced bi-axial strain to accelerate the out-plane mobility of the charge particles by incorporation of the exotic asymmetrical supper lattice structure in the i-region of the photo-sensor. The validation of the non-linear SMQCDD model is performed through comparison of the simulated data obtained from SMQCDD model with the experimental results under a-like thermal/structural/electrical conditions. Additionally, the authors have designed 3X2 array of photo-sensors and studied the photo-electrical characteristics at the said operating wavelength. The proposed device offers better performance in terms of quantum efficiency (0.619: single-type photo-sensor; 0.708: array-type photo) and photo-responsivity (0.056 A/W: single-type photo-sensor; 0.808 A/W:for array-type photo-sensor)at 1600 nm wavelength compared to its conventional flat Si counterpart. The developed exotic pin photo-sensor can be used as a sensing device for applications in optical communication and bio-medical systems. As far as the authors are aware, this is the first report on nano-scale Ge/Ge0.98Sn0.02exotic pin photo-sensor.

本文报告了基于垂直掺杂纳米级针式光传感器的 Ge/Ge0.98Sn0.02 不对称 supper 晶格结构在 1200 nm 至 2200 nm 工作波长下的优越性。作者开发了非线性应变修正量子校正漂移扩散(SMQCDD)模型,用于分析光传感器的电气和光学特性。在纯 Ge 材料中加入少量锡(2%)会在器件的本征区(i 区)产生面内双轴应变。这导致电荷粒子面外迁移率值的增加。因此,光传感器的整体性能显著提高。作者在光传感器的 i 区加入了奇特的非对称支撑晶格结构,利用面内诱导双轴应变来加速电荷粒子的面外迁移率。通过将 SMQCDD 模型获得的模拟数据与类似热/结构/电气条件下的实验结果进行比较,验证了非线性 SMQCDD 模型。此外,作者还设计了 3X2 阵列光传感器,并研究了上述工作波长下的光电特性。与传统的平面硅器件相比,所提出的器件在 1600 nm 波长下具有更好的量子效率(0.619:单一型光敏传感器;0.708:阵列型光敏传感器)和光响应率(0.056 A/W:单一型光敏传感器;0.808 A/W:阵列型光敏传感器)。所开发的奇异针形光敏传感器可用作光通信和生物医学系统中的传感设备。据作者所知,这是有关纳米级 Ge/Ge0.98Sn0.02 异种针形光敏传感器的首次报道。
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引用次数: 0
Retraction Note: Optical bio sensor based cancer cell detection using optimized machine learning model with quantum computing 撤稿说明:利用量子计算优化机器学习模型进行基于光学生物传感器的癌细胞检测
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-21 DOI: 10.1007/s11082-024-07910-6
G. Balamurugan, C. Annadurai, I. Nelson, K. Nirmala Devi, A. Sheryl Oliver, S. Gomathi
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引用次数: 0
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