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Bromobenzene Based Single Electron Transistor Sensor for Toxic Gases Detection: A Computational Insight 基于溴苯的有毒气体检测单电子晶体管传感器:计算洞察力
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-09-16 DOI: 10.1134/S1063783425600724
Kumar Gaurav, Anurag Srivastava

The bromobenzene (BrB) based single electron transistor (SET) has been investigated as a toxic gas sensor using the density functional theory based ab-initio approach. The adsorption behaviour of the considered toxic gas molecules (NH3, AsH3, HCN, and COCl2) and bromobenzene has been assessed through the adsorption energy and distance, density of states profiles, and Bader charge transfer analysis. The sensing behaviour is further analyzed by the charge stability diagram of SET and horizontal and vertical line scans over it, which were further treated as a unique fingerprint of toxic gases for detection. It has been observed that the modelled bromomobenzene based SET offers a better sensing ability, adsorption strength, and recovery time in comparison to its counterparts, making it a suitable candidate for toxic gas detection.

采用基于密度泛函理论的从头算方法研究了溴苯(BrB)基单电子晶体管(SET)作为有毒气体传感器。通过吸附能、吸附距离、态密度分布和Bader电荷转移分析,对有毒气体分子(NH3、AsH3、HCN和COCl2)和溴苯的吸附行为进行了评价。通过对SET的电荷稳定性图和对其进行水平和垂直线扫描,进一步分析其传感行为,并将其作为有毒气体的独特指纹进行检测。已经观察到,与同类材料相比,模拟的溴苯基SET具有更好的传感能力、吸附强度和恢复时间,使其成为有毒气体检测的合适候选者。
{"title":"Bromobenzene Based Single Electron Transistor Sensor for Toxic Gases Detection: A Computational Insight","authors":"Kumar Gaurav,&nbsp;Anurag Srivastava","doi":"10.1134/S1063783425600724","DOIUrl":"10.1134/S1063783425600724","url":null,"abstract":"<p>The bromobenzene (BrB) based single electron transistor (SET) has been investigated as a toxic gas sensor using the density functional theory based ab-initio approach. The adsorption behaviour of the considered toxic gas molecules (NH<sub>3</sub>, AsH<sub>3</sub>, HCN, and COCl<sub>2</sub>) and bromobenzene has been assessed through the adsorption energy and distance, density of states profiles, and Bader charge transfer analysis. The sensing behaviour is further analyzed by the charge stability diagram of SET and horizontal and vertical line scans over it, which were further treated as a unique fingerprint of toxic gases for detection. It has been observed that the modelled bromomobenzene based SET offers a better sensing ability, adsorption strength, and recovery time in comparison to its counterparts, making it a suitable candidate for toxic gas detection.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 9","pages":"745 - 754"},"PeriodicalIF":1.8,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145062167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Valley-Related Anomalous Andreev Reflection in Ferromagnet-Strain/Kekulé-Y/Superconductor Graphene Junctions 铁磁-应变/ kekul<s:1> - y /超导体石墨烯结中的谷相关异常Andreev反射
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-08-11 DOI: 10.1134/S1063783425602097
Haoran Li, Qingping Wu, Chuan Tan, Zhengfang Liu, Xianbo Xiao

The paper provides a theoretical analysis of the scattering process within a ferromagnet-strain/Kekulé-Y/superconductor graphene heterostructure. Equal-valley pair correlations in the vicinity of the ferromagnet-Kekulé-Y interface have been calculated, revealing a direct relationship between valley-related anomalous Andreev reflection, which is caused by the proximity effect in the presence of Kekulé-Y‑shaped graphene. The results show that the action of magnetic vector, strain and Kekulé-Y graphene caenhance the anomalous Andreev reflection. Moreover, by calculating the charge conductance and valley polarization conductance, our results reveal that the valley polarization conductance can be enhanced by Kekulé-Y shaped, strain and magnetic vector. These findings may provide a tool for detecting the entanglement of the equal valley superconducting pair correlations in hybrid structures.

本文对铁磁-应变/ kekul - y /超导体石墨烯异质结构中的散射过程进行了理论分析。计算了铁磁- kekul - y界面附近的等谷对相关关系,揭示了谷相关的异常Andreev反射之间的直接关系,这是由kekul - y形石墨烯存在时的邻近效应引起的。结果表明,磁矢量、应变和kekul - y石墨烯的作用可以增强反常安德烈夫反射。此外,通过计算电荷电导率和谷极化电导率,我们的结果表明,谷极化电导率可以通过kekul - y型、应变和磁矢量来增强。这些发现为探测杂化结构中等谷超导对相关的纠缠提供了工具。
{"title":"Valley-Related Anomalous Andreev Reflection in Ferromagnet-Strain/Kekulé-Y/Superconductor Graphene Junctions","authors":"Haoran Li,&nbsp;Qingping Wu,&nbsp;Chuan Tan,&nbsp;Zhengfang Liu,&nbsp;Xianbo Xiao","doi":"10.1134/S1063783425602097","DOIUrl":"10.1134/S1063783425602097","url":null,"abstract":"<p>The paper provides a theoretical analysis of the scattering process within a ferromagnet-strain/Kekulé-Y/superconductor graphene heterostructure. Equal-valley pair correlations in the vicinity of the ferromagnet-Kekulé-Y interface have been calculated, revealing a direct relationship between valley-related anomalous Andreev reflection, which is caused by the proximity effect in the presence of Kekulé-Y‑shaped graphene. The results show that the action of magnetic vector, strain and Kekulé-Y graphene caenhance the anomalous Andreev reflection. Moreover, by calculating the charge conductance and valley polarization conductance, our results reveal that the valley polarization conductance can be enhanced by Kekulé-Y shaped, strain and magnetic vector. These findings may provide a tool for detecting the entanglement of the equal valley superconducting pair correlations in hybrid structures.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"625 - 634"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanical and Thermal Characterization of Polyoxymethylene: Strain Rate Sensitivity, Crystallinity and Failure Mechanisms 聚氧亚甲基的力学和热表征:应变速率敏感性、结晶度和失效机制
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-08-11 DOI: 10.1134/S1063783425601560
Sid Ahmed Reffas, M. Elmmaguenni, R. Yekhlef, D. Belfennache, Talal M. Althagafi, M. Fatmi, A. Djemli

Polyoxymethylene (POM) is a high-performance semi-crystalline thermoplastic widely used for its excellent mechanical strength, wear resistance, and dimensional stability. This study investigates the mechanical and thermal behavior of POM under large deformations through tensile testing and thermal analysis. The results indicate that POM exhibits linear elastic behavior at low strains, transitioning to nonlinear viscoelastic and plastic behavior at higher deformations. Stress whitening and microvoid formation significantly influence failure mechanisms. Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA) confirm POM’s high crystallinity (~40%) and thermal stability, with a melting temperature of 166°C. Scanning Electron Microscopy (SEM) reveals cavitation and fibrillation as dominant damage mechanisms. The findings highlight the challenges of substituting POM due to its unique property balance. Further research should focus on predictive plasticity models to optimize POM’s industrial applications.

聚甲醛(POM)是一种高性能的半结晶热塑性塑料,因其优异的机械强度、耐磨性和尺寸稳定性而被广泛使用。通过拉伸试验和热分析,研究了POM在大变形下的力学和热行为。结果表明:POM在低应变时表现为线性弹性,在高变形时表现为非线性粘弹性和塑性;应力白化和微孔隙形成对失效机制有显著影响。差示扫描量热法(DSC)和热重分析(TGA)证实了POM的高结晶度(~40%)和热稳定性,熔融温度为166℃。扫描电镜(SEM)显示空化和纤颤是主要的损伤机制。由于POM具有独特的性能平衡,该研究结果突出了替代POM的挑战。进一步的研究应侧重于预测塑性模型,以优化POM的工业应用。
{"title":"Mechanical and Thermal Characterization of Polyoxymethylene: Strain Rate Sensitivity, Crystallinity and Failure Mechanisms","authors":"Sid Ahmed Reffas,&nbsp;M. Elmmaguenni,&nbsp;R. Yekhlef,&nbsp;D. Belfennache,&nbsp;Talal M. Althagafi,&nbsp;M. Fatmi,&nbsp;A. Djemli","doi":"10.1134/S1063783425601560","DOIUrl":"10.1134/S1063783425601560","url":null,"abstract":"<p>Polyoxymethylene (POM) is a high-performance semi-crystalline thermoplastic widely used for its excellent mechanical strength, wear resistance, and dimensional stability. This study investigates the mechanical and thermal behavior of POM under large deformations through tensile testing and thermal analysis. The results indicate that POM exhibits linear elastic behavior at low strains, transitioning to nonlinear viscoelastic and plastic behavior at higher deformations. Stress whitening and microvoid formation significantly influence failure mechanisms. Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA) confirm POM’s high crystallinity (~40%) and thermal stability, with a melting temperature of 166°C. Scanning Electron Microscopy (SEM) reveals cavitation and fibrillation as dominant damage mechanisms. The findings highlight the challenges of substituting POM due to its unique property balance. Further research should focus on predictive plasticity models to optimize POM’s industrial applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"642 - 654"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Evaluation and Thermal Stability Assessment of Graphene Nanoribbon Doped Dielectrically Modulated Tunnel Field Effect Transistor 掺杂石墨烯纳米带介质调制隧道场效应晶体管的性能评价和热稳定性评价
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-08-11 DOI: 10.1134/S106378342560027X
Sushroot,  Vedvrat, Shrish Bajpai, Syed Hasan Saeed

The performance of Dual Material Heterodielectric Graphene Nanoribbon channel tunnel FET (DM-H-GNR-TFET) and TFETs based on Silicon (DM-H-Si-TFET and DM-Si-TFET) are compared in this work. The narrow bandgap, higher carrier mobility, and fast saturation velocity of the two-dimensional material GNR have led to its proposal as a channel material to improve device performance. This analysis of the proposed structure’s DC, RF, performance and thermal stability has been conducted. The GNR-based channel TFET demonstrates a higher current ratio of the order of 1014, in contrast to the Si-based TFET (~1011) with improved subthreshold swing. This investigation encompasses the influence of temperature on the DC parameters, in addition to the analog/RF figures of merit for the proposed structure. Moreover, the results are compared with existing literature on TFETs, revealing that DM-H-GNR-TFET excels Si-based TFETs and other variants.

比较了双材料异质介质石墨烯纳米带沟道隧道场效应管(DM-H-GNR-TFET)和硅基tfet (DM-H-Si-TFET和DM-Si-TFET)的性能。二维材料GNR的窄带隙、较高的载流子迁移率和快速的饱和速度使其成为提高器件性能的通道材料。对该结构的直流、射频、性能和热稳定性进行了分析。与硅基TFET(~1011)相比,基于gnr的通道TFET具有更高的1014数量级的电流比,并且具有改善的亚阈值摆幅。这项研究包括温度对直流参数的影响,以及所提出结构的模拟/射频数字优点。此外,将结果与现有的tfet文献进行了比较,发现DM-H-GNR-TFET优于si基tfet和其他变体。
{"title":"Performance Evaluation and Thermal Stability Assessment of Graphene Nanoribbon Doped Dielectrically Modulated Tunnel Field Effect Transistor","authors":"Sushroot,&nbsp; Vedvrat,&nbsp;Shrish Bajpai,&nbsp;Syed Hasan Saeed","doi":"10.1134/S106378342560027X","DOIUrl":"10.1134/S106378342560027X","url":null,"abstract":"<p>The performance of Dual Material Heterodielectric Graphene Nanoribbon channel tunnel FET (DM-H-GNR-TFET) and TFETs based on Silicon (DM-H-Si-TFET and DM-Si-TFET) are compared in this work. The narrow bandgap, higher carrier mobility, and fast saturation velocity of the two-dimensional material GNR have led to its proposal as a channel material to improve device performance. This analysis of the proposed structure’s DC, RF, performance and thermal stability has been conducted. The GNR-based channel TFET demonstrates a higher current ratio of the order of 10<sup>14</sup>, in contrast to the Si-based TFET (~10<sup>11</sup>) with improved subthreshold swing. This investigation encompasses the influence of temperature on the DC parameters, in addition to the analog/RF figures of merit for the proposed structure. Moreover, the results are compared with existing literature on TFETs, revealing that DM-H-GNR-TFET excels Si-based TFETs and other variants.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"664 - 674"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical, Thermal, and Electrical Properties of Triglycine Sulfate Doped with P-Chlorophenzophenone Single Crystals 对氯苯二苯酮单晶掺杂硫酸甘油三酯的光学、热学和电学性质
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-08-11 DOI: 10.1134/S1063783425601298
D. Arul Asir Abraham, S. C. Vella Durai

Triglycine sulfate crystals doped with P-Chlorophenzophenone (TGS P-CPP) were grown and characterized using various techniques. Single-crystal X-ray diffraction analysis revealed the crystal structure and lattice parameters. Powder XRD confirmed the crystalline nature of the material. Fourier transform infrared spectroscopy (FTIR) identified the functional groups present in the crystal. UV-Vis spectroscopy showed a wide transparency range, making it suitable for nonlinear optical applications. The crystal exhibited a second harmonic generation efficiency of 0.96 times that of KDP. Thermal analysis revealed a melting point of 236°C and a decomposition point of 347.6°C. Dielectric studies showed a high dielectric constant and low dielectric loss, indicating potential applications in nonlinear optical devices. Impedance spectroscopy revealed a negative temperature coefficient of resistance behavior and a Debye-type relaxation process. The results of this comprehensive characterization study demonstrate the potential of TGS P-CPP single crystals for nonlinear optical applications.

以对氯苯二苯酮(TGS - P-CPP)掺杂的硫酸甘油三酯晶体进行了生长和表征。单晶x射线衍射分析揭示了晶体结构和晶格参数。粉末XRD证实了材料的结晶性质。傅里叶变换红外光谱(FTIR)鉴定了晶体中存在的官能团。紫外可见光谱显示出宽的透明范围,使其适合非线性光学应用。该晶体的二次谐波产生效率是KDP的0.96倍。热分析显示熔点为236℃,分解点为347.6℃。电介质研究表明,它具有较高的介电常数和较低的介电损耗,在非线性光学器件中具有潜在的应用前景。阻抗谱显示了负温度系数的电阻行为和德拜型弛豫过程。这项综合表征研究的结果证明了TGS P-CPP单晶在非线性光学应用中的潜力。
{"title":"Optical, Thermal, and Electrical Properties of Triglycine Sulfate Doped with P-Chlorophenzophenone Single Crystals","authors":"D. Arul Asir Abraham,&nbsp;S. C. Vella Durai","doi":"10.1134/S1063783425601298","DOIUrl":"10.1134/S1063783425601298","url":null,"abstract":"<p>Triglycine sulfate crystals doped with P-Chlorophenzophenone (TGS P-CPP) were grown and characterized using various techniques. Single-crystal X-ray diffraction analysis revealed the crystal structure and lattice parameters. Powder XRD confirmed the crystalline nature of the material. Fourier transform infrared spectroscopy (FTIR) identified the functional groups present in the crystal. UV-Vis spectroscopy showed a wide transparency range, making it suitable for nonlinear optical applications. The crystal exhibited a second harmonic generation efficiency of 0.96 times that of KDP. Thermal analysis revealed a melting point of 236°C and a decomposition point of 347.6°C. Dielectric studies showed a high dielectric constant and low dielectric loss, indicating potential applications in nonlinear optical devices. Impedance spectroscopy revealed a negative temperature coefficient of resistance behavior and a Debye-type relaxation process. The results of this comprehensive characterization study demonstrate the potential of TGS P-CPP single crystals for nonlinear optical applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"710 - 719"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modification of the Structure and Properties of the Surface of Titanium VT1-0 after Electron Beam Processing 电子束处理对VT1-0钛合金表面结构和性能的影响
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-08-11 DOI: 10.1134/S1063783425600591
A. V. Ionina

In this work, the surface of commercially pure titanium grade VT1-0 was strengthened by electron beam treatment, which significantly increased the fatigue life of the material. The structural and phase states and defect substructure of titanium subjected to cyclic fatigue tests were studied using scanning and transmission electron diffraction microscopy. It was shown that the surface layer formed as a result of electron beam irradiation contains micropores oriented parallel to the sample surface. Irradiation of commercially pure titanium VT1-0 with a high-intensity pulsed electron beam under the conditions (16 keV, 25 J/cm2, 150 µs, 3 pulses, 0.3 s–1) leads to grain refinement and the formation of an intragranular substructure, i.e., to the development of additional structural levels in the submicron and nanometer range in the surface layer.

本文采用电子束处理方法对工业纯钛VT1-0级的表面进行强化处理,显著提高了材料的疲劳寿命。采用扫描电镜和透射电子衍射显微镜研究了循环疲劳试验中钛的组织、相态和缺陷亚结构。结果表明,电子束辐照形成的表面层含有平行于样品表面的微孔。用高强度脉冲电子束(16 keV, 25 J/cm2, 150µs, 3个脉冲,0.3 s - 1)辐照商业纯钛VT1-0,导致晶粒细化,形成粒内亚结构,即在表层形成亚微米和纳米级的附加结构水平。
{"title":"Modification of the Structure and Properties of the Surface of Titanium VT1-0 after Electron Beam Processing","authors":"A. V. Ionina","doi":"10.1134/S1063783425600591","DOIUrl":"10.1134/S1063783425600591","url":null,"abstract":"<p>In this work, the surface of commercially pure titanium grade VT1-0 was strengthened by electron beam treatment, which significantly increased the fatigue life of the material. The structural and phase states and defect substructure of titanium subjected to cyclic fatigue tests were studied using scanning and transmission electron diffraction microscopy. It was shown that the surface layer formed as a result of electron beam irradiation contains micropores oriented parallel to the sample surface. Irradiation of commercially pure titanium VT1-0 with a high-intensity pulsed electron beam under the conditions (16 keV, 25 J/cm<sup>2</sup>, 150 µs, 3 pulses, 0.3 s<sup>–1</sup>) leads to grain refinement and the formation of an intragranular substructure, i.e., to the development of additional structural levels in the submicron and nanometer range in the surface layer.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"737 - 744"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Temperature and Phosphoros Concentration on the Optoelectronic Properties of AlAs1–xPx Alloys 温度和磷浓度对AlAs1-xPx合金光电性能的影响
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-08-11 DOI: 10.1134/S1063783425601146
Elkenany Brens Elkenany, Hasan B. Albargi, R. Dhahri

The electronic and optical properties of AlAs1–xPx under the influence of phosphorous concentration at various values of temperature have been studied. The optical lattice vibration frequencies in zinc-blende AlAs1–xPx have been investigated based on a pseudopotential method (EPM) under the virtual crystal approximation (VCA). It is demonstrated that the composition dependency of energy bandgaps is non-linear. It is discovered that the AlAs1–xPx is an indirect semiconductor alloy in the range x = 0–1. Overall, our results demonstrated an acceptably high degree of agreement with published data. The findings collected in this study could be useful for photonic technological uses.

研究了不同温度下磷浓度对AlAs1-xPx的电子和光学性质的影响。利用虚晶体近似(VCA)下的赝势方法(EPM)研究了锌闪锌矿AlAs1-xPx的光学晶格振动频率。结果表明,能量带隙的成分依赖关系是非线性的。发现AlAs1-xPx是x = 0-1范围内的间接半导体合金。总体而言,我们的结果与已发表的数据具有可接受的高度一致性。本研究收集的发现可能对光子技术的应用有用。
{"title":"Effect of Temperature and Phosphoros Concentration on the Optoelectronic Properties of AlAs1–xPx Alloys","authors":"Elkenany Brens Elkenany,&nbsp;Hasan B. Albargi,&nbsp;R. Dhahri","doi":"10.1134/S1063783425601146","DOIUrl":"10.1134/S1063783425601146","url":null,"abstract":"<p>The electronic and optical properties of AlAs<sub>1–<i>x</i></sub>P<sub><i>x</i></sub> under the influence of phosphorous concentration at various values of temperature have been studied. The optical lattice vibration frequencies in zinc-blende AlAs<sub>1–<i>x</i></sub>P<sub><i>x</i></sub> have been investigated based on a pseudopotential method (EPM) under the virtual crystal approximation (VCA). It is demonstrated that the composition dependency of energy bandgaps is non-linear. It is discovered that the AlAs<sub>1–<i>x</i></sub>P<sub><i>x</i></sub> is an indirect semiconductor alloy in the range <i>x</i> = 0–1. Overall, our results demonstrated an acceptably high degree of agreement with published data. The findings collected in this study could be useful for photonic technological uses.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"675 - 683"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Role of Cation Deficiency and Impurities in the Formation of Photosensitivity Centers in CdIn2S4 Compound 阳离子缺乏和杂质在CdIn2S4化合物光敏中心形成中的作用
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-08-11 DOI: 10.1134/S1063783425601079
Zafar Kadiroglu

Optical quenching of photocurrent, the dependence of the quenching magnitude on the wavelength of the additional quenching light, and temperature were studied in stoichiometric, nonstoichiometric, and copper-doped CdIn2S4 samples. It was shown that a deficiency of cadmium and indium in CdIn2S4 does not change the energy distance of slow recombination centers from the valence band top ((E_{{{text{vr}}}}^{{text{0}}}) = 0.73 eV for both undoped samples and those with cadmium and indium deficiency), whereas doping the crystals with copper leads to a slight increase in this energy distance ((E_{{{text{vr}}}}^{{text{0}}}) = 0.86 eV).

在化学计量、非化学计量和铜掺杂CdIn2S4样品中研究了光电流的光猝灭、猝灭幅度与附加猝灭光波长和温度的关系。结果表明,CdIn2S4中缺乏镉和铟并不会改变慢复合中心从价带顶部的能量距离(对于未掺杂的样品和缺乏镉和铟的样品都是(E_{{{text{vr}}}}^{{text{0}}}) = 0.73 eV),而掺杂铜则会导致慢复合中心的能量距离略有增加((E_{{{text{vr}}}}^{{text{0}}}) = 0.86 eV)。
{"title":"The Role of Cation Deficiency and Impurities in the Formation of Photosensitivity Centers in CdIn2S4 Compound","authors":"Zafar Kadiroglu","doi":"10.1134/S1063783425601079","DOIUrl":"10.1134/S1063783425601079","url":null,"abstract":"<p>Optical quenching of photocurrent, the dependence of the quenching magnitude on the wavelength of the additional quenching light, and temperature were studied in stoichiometric, nonstoichiometric, and copper-doped CdIn<sub>2</sub>S<sub>4</sub> samples. It was shown that a deficiency of cadmium and indium in CdIn<sub>2</sub>S<sub>4</sub> does not change the energy distance of slow recombination centers from the valence band top (<span>(E_{{{text{vr}}}}^{{text{0}}})</span> = 0.73 eV for both undoped samples and those with cadmium and indium deficiency), whereas doping the crystals with copper leads to a slight increase in this energy distance (<span>(E_{{{text{vr}}}}^{{text{0}}})</span> = 0.86 eV).</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"684 - 687"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the Physicochemical Properties of the TlInTe2–Fe System TlInTe2-Fe体系的物理化学性质研究
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-08-11 DOI: 10.1134/S1063783425601948
A. I. Najafov, N. N. Mursakulov, M. M. Shirinov, T. G. Mammadov, I. A. Mamedova, N. A. Abdullayev

The alloys of the TlInTe2–Fe system were studied by differential thermal analysis, X-ray diffraction, and microstructural analysis. The solubility range of iron in the TlInTe2 compound was determined to be 5.0 at % at 296 K. Solid solutions formed on the basis of the ternary compound TlInTe2 in the TlInTe2–Fe system are predominantly interstitial solid solutions, with iron atoms located mainly in the octahedral voids along the c axis between thallium ions. The appearance of a new mode at ~120 cm–1 in the Raman scattering spectra of single-crystal TlInTe2 samples doped with 5.0 at % Fe was observed. It was found that the incorporation of iron atoms into the TlInTe2 crystal lattice lowers the activation energy of impurity conductivity and increases the crystal’s conductivity due to the rise in charge carrier concentration.

采用差热分析、x射线衍射和显微组织分析对TlInTe2-Fe系合金进行了研究。在296 K时,铁在TlInTe2化合物中的溶解度范围为5.0 at %。在TlInTe2 - fe体系中,以三元化合物TlInTe2为基础形成的固溶体以间隙固溶体为主,铁原子主要位于铊离子之间沿c轴的八面体空隙中。在掺杂5.0 at % Fe的单晶TlInTe2样品的拉曼散射光谱中,在~120 cm-1处出现了新的模式。研究发现,铁原子掺入TlInTe2晶格后,由于载流子浓度的升高,杂质电导率的活化能降低,晶体电导率提高。
{"title":"Study of the Physicochemical Properties of the TlInTe2–Fe System","authors":"A. I. Najafov,&nbsp;N. N. Mursakulov,&nbsp;M. M. Shirinov,&nbsp;T. G. Mammadov,&nbsp;I. A. Mamedova,&nbsp;N. A. Abdullayev","doi":"10.1134/S1063783425601948","DOIUrl":"10.1134/S1063783425601948","url":null,"abstract":"<p>The alloys of the TlInTe<sub>2</sub>–Fe system were studied by differential thermal analysis, X-ray diffraction, and microstructural analysis. The solubility range of iron in the TlInTe<sub>2</sub> compound was determined to be 5.0 at % at 296 K. Solid solutions formed on the basis of the ternary compound TlInTe<sub>2</sub> in the TlInTe<sub>2</sub>–Fe system are predominantly interstitial solid solutions, with iron atoms located mainly in the octahedral voids along the <i>c</i> axis between thallium ions. The appearance of a new mode at ~120 cm<sup>–1</sup> in the Raman scattering spectra of single-crystal TlInTe<sub>2</sub> samples doped with 5.0 at % Fe was observed. It was found that the incorporation of iron atoms into the TlInTe<sub>2</sub> crystal lattice lowers the activation energy of impurity conductivity and increases the crystal’s conductivity due to the rise in charge carrier concentration.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"635 - 641"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DFT Study, Molecular Docking, and Dynamics Simulation of Hydrazone-Based Compound 腙基化合物的DFT研究、分子对接及动力学模拟
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-08-11 DOI: 10.1134/S106378342560102X
Malahat Kurbanova, Sabir Ali Siddique, Muhammad Ashfaq, Subramani Karthikeyan, Arzu Sadigova, Abel Maharramov, Suraj N. Mali, Hatem A. Abuelizz, Rashad Al-Salahi, Youness El Bakri, Suman Adhikari

The present study investigates non-covalent interactions of a hydrazine-imino-oxo hybrid Allyl 3‑oxo-2-(2-phenylhydrazone) butanoate (AOPB). The supramolecular assembly of AOPB is stabilized through various intermolecular contacts which are explored Hirshfeld surface analysis. The DFT computations conducted on AOPB provided evidence of its excellent stability, as manifested through the optimized molecular structure, the energy gap between the highest molecular orbital and lowest molecular orbital, as well as the interactions between molecules. The NBO analysis further validated the role of lone pair, bonding, and anti-bonding orbitals in mediating these interactions. DFT calculations inferred that AOPB possesses a high level of stability. These outcomes designate that AOPB is a potential candidate for further advancement as a potent inhibitor of Tyrosyl-DNA phosphodiesterase 1 DNA binding protein. In addition to that structural activity relationship studies are performed and based on that hit target Tyrosyl-DNA phosphodiesterase 1 DNA binding protein is taken for further molecular docking and molecular dynamics analysis.

本研究研究了肼-亚胺-氧杂化丙烯基3 -氧-2-(2-苯基腙)丁酸酯(AOPB)的非共价相互作用。Hirshfeld表面分析探讨了AOPB的超分子组装是通过各种分子间接触来稳定的。对AOPB进行的DFT计算证明了其优异的稳定性,这表现在优化后的分子结构、最高分子轨道与最低分子轨道之间的能隙以及分子间的相互作用上。NBO分析进一步证实了孤对轨道、成键轨道和反键轨道在这些相互作用中的作用。DFT计算表明AOPB具有较高的稳定性。这些结果表明,AOPB作为酪氨酸-DNA磷酸二酯酶1 DNA结合蛋白的有效抑制剂,有进一步发展的潜力。除此之外,进行结构活性关系研究,并在此基础上选取酪氨酸-DNA磷酸二酯酶1 DNA结合蛋白进行进一步的分子对接和分子动力学分析。
{"title":"DFT Study, Molecular Docking, and Dynamics Simulation of Hydrazone-Based Compound","authors":"Malahat Kurbanova,&nbsp;Sabir Ali Siddique,&nbsp;Muhammad Ashfaq,&nbsp;Subramani Karthikeyan,&nbsp;Arzu Sadigova,&nbsp;Abel Maharramov,&nbsp;Suraj N. Mali,&nbsp;Hatem A. Abuelizz,&nbsp;Rashad Al-Salahi,&nbsp;Youness El Bakri,&nbsp;Suman Adhikari","doi":"10.1134/S106378342560102X","DOIUrl":"10.1134/S106378342560102X","url":null,"abstract":"<p>The present study investigates non-covalent interactions of a hydrazine-imino-oxo hybrid Allyl 3‑oxo-2-(2-phenylhydrazone) butanoate (AOPB). The supramolecular assembly of AOPB is stabilized through various intermolecular contacts which are explored Hirshfeld surface analysis. The DFT computations conducted on AOPB provided evidence of its excellent stability, as manifested through the optimized molecular structure, the energy gap between the highest molecular orbital and lowest molecular orbital, as well as the interactions between molecules. The NBO analysis further validated the role of lone pair, bonding, and anti-bonding orbitals in mediating these interactions. DFT calculations inferred that AOPB possesses a high level of stability. These outcomes designate that AOPB is a potential candidate for further advancement as a potent inhibitor of Tyrosyl-DNA phosphodiesterase 1 DNA binding protein. In addition to that structural activity relationship studies are performed and based on that hit target Tyrosyl-DNA phosphodiesterase 1 DNA binding protein is taken for further molecular docking and molecular dynamics analysis.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"688 - 703"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Physics of the Solid State
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