Pub Date : 2025-09-16DOI: 10.1134/S1063783425600724
Kumar Gaurav, Anurag Srivastava
The bromobenzene (BrB) based single electron transistor (SET) has been investigated as a toxic gas sensor using the density functional theory based ab-initio approach. The adsorption behaviour of the considered toxic gas molecules (NH3, AsH3, HCN, and COCl2) and bromobenzene has been assessed through the adsorption energy and distance, density of states profiles, and Bader charge transfer analysis. The sensing behaviour is further analyzed by the charge stability diagram of SET and horizontal and vertical line scans over it, which were further treated as a unique fingerprint of toxic gases for detection. It has been observed that the modelled bromomobenzene based SET offers a better sensing ability, adsorption strength, and recovery time in comparison to its counterparts, making it a suitable candidate for toxic gas detection.
{"title":"Bromobenzene Based Single Electron Transistor Sensor for Toxic Gases Detection: A Computational Insight","authors":"Kumar Gaurav, Anurag Srivastava","doi":"10.1134/S1063783425600724","DOIUrl":"10.1134/S1063783425600724","url":null,"abstract":"<p>The bromobenzene (BrB) based single electron transistor (SET) has been investigated as a toxic gas sensor using the density functional theory based ab-initio approach. The adsorption behaviour of the considered toxic gas molecules (NH<sub>3</sub>, AsH<sub>3</sub>, HCN, and COCl<sub>2</sub>) and bromobenzene has been assessed through the adsorption energy and distance, density of states profiles, and Bader charge transfer analysis. The sensing behaviour is further analyzed by the charge stability diagram of SET and horizontal and vertical line scans over it, which were further treated as a unique fingerprint of toxic gases for detection. It has been observed that the modelled bromomobenzene based SET offers a better sensing ability, adsorption strength, and recovery time in comparison to its counterparts, making it a suitable candidate for toxic gas detection.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 9","pages":"745 - 754"},"PeriodicalIF":1.8,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145062167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The paper provides a theoretical analysis of the scattering process within a ferromagnet-strain/Kekulé-Y/superconductor graphene heterostructure. Equal-valley pair correlations in the vicinity of the ferromagnet-Kekulé-Y interface have been calculated, revealing a direct relationship between valley-related anomalous Andreev reflection, which is caused by the proximity effect in the presence of Kekulé-Y‑shaped graphene. The results show that the action of magnetic vector, strain and Kekulé-Y graphene caenhance the anomalous Andreev reflection. Moreover, by calculating the charge conductance and valley polarization conductance, our results reveal that the valley polarization conductance can be enhanced by Kekulé-Y shaped, strain and magnetic vector. These findings may provide a tool for detecting the entanglement of the equal valley superconducting pair correlations in hybrid structures.
{"title":"Valley-Related Anomalous Andreev Reflection in Ferromagnet-Strain/Kekulé-Y/Superconductor Graphene Junctions","authors":"Haoran Li, Qingping Wu, Chuan Tan, Zhengfang Liu, Xianbo Xiao","doi":"10.1134/S1063783425602097","DOIUrl":"10.1134/S1063783425602097","url":null,"abstract":"<p>The paper provides a theoretical analysis of the scattering process within a ferromagnet-strain/Kekulé-Y/superconductor graphene heterostructure. Equal-valley pair correlations in the vicinity of the ferromagnet-Kekulé-Y interface have been calculated, revealing a direct relationship between valley-related anomalous Andreev reflection, which is caused by the proximity effect in the presence of Kekulé-Y‑shaped graphene. The results show that the action of magnetic vector, strain and Kekulé-Y graphene caenhance the anomalous Andreev reflection. Moreover, by calculating the charge conductance and valley polarization conductance, our results reveal that the valley polarization conductance can be enhanced by Kekulé-Y shaped, strain and magnetic vector. These findings may provide a tool for detecting the entanglement of the equal valley superconducting pair correlations in hybrid structures.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"625 - 634"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-11DOI: 10.1134/S1063783425601560
Sid Ahmed Reffas, M. Elmmaguenni, R. Yekhlef, D. Belfennache, Talal M. Althagafi, M. Fatmi, A. Djemli
Polyoxymethylene (POM) is a high-performance semi-crystalline thermoplastic widely used for its excellent mechanical strength, wear resistance, and dimensional stability. This study investigates the mechanical and thermal behavior of POM under large deformations through tensile testing and thermal analysis. The results indicate that POM exhibits linear elastic behavior at low strains, transitioning to nonlinear viscoelastic and plastic behavior at higher deformations. Stress whitening and microvoid formation significantly influence failure mechanisms. Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA) confirm POM’s high crystallinity (~40%) and thermal stability, with a melting temperature of 166°C. Scanning Electron Microscopy (SEM) reveals cavitation and fibrillation as dominant damage mechanisms. The findings highlight the challenges of substituting POM due to its unique property balance. Further research should focus on predictive plasticity models to optimize POM’s industrial applications.
{"title":"Mechanical and Thermal Characterization of Polyoxymethylene: Strain Rate Sensitivity, Crystallinity and Failure Mechanisms","authors":"Sid Ahmed Reffas, M. Elmmaguenni, R. Yekhlef, D. Belfennache, Talal M. Althagafi, M. Fatmi, A. Djemli","doi":"10.1134/S1063783425601560","DOIUrl":"10.1134/S1063783425601560","url":null,"abstract":"<p>Polyoxymethylene (POM) is a high-performance semi-crystalline thermoplastic widely used for its excellent mechanical strength, wear resistance, and dimensional stability. This study investigates the mechanical and thermal behavior of POM under large deformations through tensile testing and thermal analysis. The results indicate that POM exhibits linear elastic behavior at low strains, transitioning to nonlinear viscoelastic and plastic behavior at higher deformations. Stress whitening and microvoid formation significantly influence failure mechanisms. Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA) confirm POM’s high crystallinity (~40%) and thermal stability, with a melting temperature of 166°C. Scanning Electron Microscopy (SEM) reveals cavitation and fibrillation as dominant damage mechanisms. The findings highlight the challenges of substituting POM due to its unique property balance. Further research should focus on predictive plasticity models to optimize POM’s industrial applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"642 - 654"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-11DOI: 10.1134/S106378342560027X
Sushroot, Vedvrat, Shrish Bajpai, Syed Hasan Saeed
The performance of Dual Material Heterodielectric Graphene Nanoribbon channel tunnel FET (DM-H-GNR-TFET) and TFETs based on Silicon (DM-H-Si-TFET and DM-Si-TFET) are compared in this work. The narrow bandgap, higher carrier mobility, and fast saturation velocity of the two-dimensional material GNR have led to its proposal as a channel material to improve device performance. This analysis of the proposed structure’s DC, RF, performance and thermal stability has been conducted. The GNR-based channel TFET demonstrates a higher current ratio of the order of 1014, in contrast to the Si-based TFET (~1011) with improved subthreshold swing. This investigation encompasses the influence of temperature on the DC parameters, in addition to the analog/RF figures of merit for the proposed structure. Moreover, the results are compared with existing literature on TFETs, revealing that DM-H-GNR-TFET excels Si-based TFETs and other variants.
{"title":"Performance Evaluation and Thermal Stability Assessment of Graphene Nanoribbon Doped Dielectrically Modulated Tunnel Field Effect Transistor","authors":"Sushroot, Vedvrat, Shrish Bajpai, Syed Hasan Saeed","doi":"10.1134/S106378342560027X","DOIUrl":"10.1134/S106378342560027X","url":null,"abstract":"<p>The performance of Dual Material Heterodielectric Graphene Nanoribbon channel tunnel FET (DM-H-GNR-TFET) and TFETs based on Silicon (DM-H-Si-TFET and DM-Si-TFET) are compared in this work. The narrow bandgap, higher carrier mobility, and fast saturation velocity of the two-dimensional material GNR have led to its proposal as a channel material to improve device performance. This analysis of the proposed structure’s DC, RF, performance and thermal stability has been conducted. The GNR-based channel TFET demonstrates a higher current ratio of the order of 10<sup>14</sup>, in contrast to the Si-based TFET (~10<sup>11</sup>) with improved subthreshold swing. This investigation encompasses the influence of temperature on the DC parameters, in addition to the analog/RF figures of merit for the proposed structure. Moreover, the results are compared with existing literature on TFETs, revealing that DM-H-GNR-TFET excels Si-based TFETs and other variants.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"664 - 674"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-11DOI: 10.1134/S1063783425601298
D. Arul Asir Abraham, S. C. Vella Durai
Triglycine sulfate crystals doped with P-Chlorophenzophenone (TGS P-CPP) were grown and characterized using various techniques. Single-crystal X-ray diffraction analysis revealed the crystal structure and lattice parameters. Powder XRD confirmed the crystalline nature of the material. Fourier transform infrared spectroscopy (FTIR) identified the functional groups present in the crystal. UV-Vis spectroscopy showed a wide transparency range, making it suitable for nonlinear optical applications. The crystal exhibited a second harmonic generation efficiency of 0.96 times that of KDP. Thermal analysis revealed a melting point of 236°C and a decomposition point of 347.6°C. Dielectric studies showed a high dielectric constant and low dielectric loss, indicating potential applications in nonlinear optical devices. Impedance spectroscopy revealed a negative temperature coefficient of resistance behavior and a Debye-type relaxation process. The results of this comprehensive characterization study demonstrate the potential of TGS P-CPP single crystals for nonlinear optical applications.
{"title":"Optical, Thermal, and Electrical Properties of Triglycine Sulfate Doped with P-Chlorophenzophenone Single Crystals","authors":"D. Arul Asir Abraham, S. C. Vella Durai","doi":"10.1134/S1063783425601298","DOIUrl":"10.1134/S1063783425601298","url":null,"abstract":"<p>Triglycine sulfate crystals doped with P-Chlorophenzophenone (TGS P-CPP) were grown and characterized using various techniques. Single-crystal X-ray diffraction analysis revealed the crystal structure and lattice parameters. Powder XRD confirmed the crystalline nature of the material. Fourier transform infrared spectroscopy (FTIR) identified the functional groups present in the crystal. UV-Vis spectroscopy showed a wide transparency range, making it suitable for nonlinear optical applications. The crystal exhibited a second harmonic generation efficiency of 0.96 times that of KDP. Thermal analysis revealed a melting point of 236°C and a decomposition point of 347.6°C. Dielectric studies showed a high dielectric constant and low dielectric loss, indicating potential applications in nonlinear optical devices. Impedance spectroscopy revealed a negative temperature coefficient of resistance behavior and a Debye-type relaxation process. The results of this comprehensive characterization study demonstrate the potential of TGS P-CPP single crystals for nonlinear optical applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"710 - 719"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-11DOI: 10.1134/S1063783425600591
A. V. Ionina
In this work, the surface of commercially pure titanium grade VT1-0 was strengthened by electron beam treatment, which significantly increased the fatigue life of the material. The structural and phase states and defect substructure of titanium subjected to cyclic fatigue tests were studied using scanning and transmission electron diffraction microscopy. It was shown that the surface layer formed as a result of electron beam irradiation contains micropores oriented parallel to the sample surface. Irradiation of commercially pure titanium VT1-0 with a high-intensity pulsed electron beam under the conditions (16 keV, 25 J/cm2, 150 µs, 3 pulses, 0.3 s–1) leads to grain refinement and the formation of an intragranular substructure, i.e., to the development of additional structural levels in the submicron and nanometer range in the surface layer.
本文采用电子束处理方法对工业纯钛VT1-0级的表面进行强化处理,显著提高了材料的疲劳寿命。采用扫描电镜和透射电子衍射显微镜研究了循环疲劳试验中钛的组织、相态和缺陷亚结构。结果表明,电子束辐照形成的表面层含有平行于样品表面的微孔。用高强度脉冲电子束(16 keV, 25 J/cm2, 150µs, 3个脉冲,0.3 s - 1)辐照商业纯钛VT1-0,导致晶粒细化,形成粒内亚结构,即在表层形成亚微米和纳米级的附加结构水平。
{"title":"Modification of the Structure and Properties of the Surface of Titanium VT1-0 after Electron Beam Processing","authors":"A. V. Ionina","doi":"10.1134/S1063783425600591","DOIUrl":"10.1134/S1063783425600591","url":null,"abstract":"<p>In this work, the surface of commercially pure titanium grade VT1-0 was strengthened by electron beam treatment, which significantly increased the fatigue life of the material. The structural and phase states and defect substructure of titanium subjected to cyclic fatigue tests were studied using scanning and transmission electron diffraction microscopy. It was shown that the surface layer formed as a result of electron beam irradiation contains micropores oriented parallel to the sample surface. Irradiation of commercially pure titanium VT1-0 with a high-intensity pulsed electron beam under the conditions (16 keV, 25 J/cm<sup>2</sup>, 150 µs, 3 pulses, 0.3 s<sup>–1</sup>) leads to grain refinement and the formation of an intragranular substructure, i.e., to the development of additional structural levels in the submicron and nanometer range in the surface layer.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"737 - 744"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-11DOI: 10.1134/S1063783425601146
Elkenany Brens Elkenany, Hasan B. Albargi, R. Dhahri
The electronic and optical properties of AlAs1–xPx under the influence of phosphorous concentration at various values of temperature have been studied. The optical lattice vibration frequencies in zinc-blende AlAs1–xPx have been investigated based on a pseudopotential method (EPM) under the virtual crystal approximation (VCA). It is demonstrated that the composition dependency of energy bandgaps is non-linear. It is discovered that the AlAs1–xPx is an indirect semiconductor alloy in the range x = 0–1. Overall, our results demonstrated an acceptably high degree of agreement with published data. The findings collected in this study could be useful for photonic technological uses.
{"title":"Effect of Temperature and Phosphoros Concentration on the Optoelectronic Properties of AlAs1–xPx Alloys","authors":"Elkenany Brens Elkenany, Hasan B. Albargi, R. Dhahri","doi":"10.1134/S1063783425601146","DOIUrl":"10.1134/S1063783425601146","url":null,"abstract":"<p>The electronic and optical properties of AlAs<sub>1–<i>x</i></sub>P<sub><i>x</i></sub> under the influence of phosphorous concentration at various values of temperature have been studied. The optical lattice vibration frequencies in zinc-blende AlAs<sub>1–<i>x</i></sub>P<sub><i>x</i></sub> have been investigated based on a pseudopotential method (EPM) under the virtual crystal approximation (VCA). It is demonstrated that the composition dependency of energy bandgaps is non-linear. It is discovered that the AlAs<sub>1–<i>x</i></sub>P<sub><i>x</i></sub> is an indirect semiconductor alloy in the range <i>x</i> = 0–1. Overall, our results demonstrated an acceptably high degree of agreement with published data. The findings collected in this study could be useful for photonic technological uses.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"675 - 683"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-11DOI: 10.1134/S1063783425601079
Zafar Kadiroglu
Optical quenching of photocurrent, the dependence of the quenching magnitude on the wavelength of the additional quenching light, and temperature were studied in stoichiometric, nonstoichiometric, and copper-doped CdIn2S4 samples. It was shown that a deficiency of cadmium and indium in CdIn2S4 does not change the energy distance of slow recombination centers from the valence band top ((E_{{{text{vr}}}}^{{text{0}}}) = 0.73 eV for both undoped samples and those with cadmium and indium deficiency), whereas doping the crystals with copper leads to a slight increase in this energy distance ((E_{{{text{vr}}}}^{{text{0}}}) = 0.86 eV).
{"title":"The Role of Cation Deficiency and Impurities in the Formation of Photosensitivity Centers in CdIn2S4 Compound","authors":"Zafar Kadiroglu","doi":"10.1134/S1063783425601079","DOIUrl":"10.1134/S1063783425601079","url":null,"abstract":"<p>Optical quenching of photocurrent, the dependence of the quenching magnitude on the wavelength of the additional quenching light, and temperature were studied in stoichiometric, nonstoichiometric, and copper-doped CdIn<sub>2</sub>S<sub>4</sub> samples. It was shown that a deficiency of cadmium and indium in CdIn<sub>2</sub>S<sub>4</sub> does not change the energy distance of slow recombination centers from the valence band top (<span>(E_{{{text{vr}}}}^{{text{0}}})</span> = 0.73 eV for both undoped samples and those with cadmium and indium deficiency), whereas doping the crystals with copper leads to a slight increase in this energy distance (<span>(E_{{{text{vr}}}}^{{text{0}}})</span> = 0.86 eV).</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"684 - 687"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-11DOI: 10.1134/S1063783425601948
A. I. Najafov, N. N. Mursakulov, M. M. Shirinov, T. G. Mammadov, I. A. Mamedova, N. A. Abdullayev
The alloys of the TlInTe2–Fe system were studied by differential thermal analysis, X-ray diffraction, and microstructural analysis. The solubility range of iron in the TlInTe2 compound was determined to be 5.0 at % at 296 K. Solid solutions formed on the basis of the ternary compound TlInTe2 in the TlInTe2–Fe system are predominantly interstitial solid solutions, with iron atoms located mainly in the octahedral voids along the c axis between thallium ions. The appearance of a new mode at ~120 cm–1 in the Raman scattering spectra of single-crystal TlInTe2 samples doped with 5.0 at % Fe was observed. It was found that the incorporation of iron atoms into the TlInTe2 crystal lattice lowers the activation energy of impurity conductivity and increases the crystal’s conductivity due to the rise in charge carrier concentration.
采用差热分析、x射线衍射和显微组织分析对TlInTe2-Fe系合金进行了研究。在296 K时,铁在TlInTe2化合物中的溶解度范围为5.0 at %。在TlInTe2 - fe体系中,以三元化合物TlInTe2为基础形成的固溶体以间隙固溶体为主,铁原子主要位于铊离子之间沿c轴的八面体空隙中。在掺杂5.0 at % Fe的单晶TlInTe2样品的拉曼散射光谱中,在~120 cm-1处出现了新的模式。研究发现,铁原子掺入TlInTe2晶格后,由于载流子浓度的升高,杂质电导率的活化能降低,晶体电导率提高。
{"title":"Study of the Physicochemical Properties of the TlInTe2–Fe System","authors":"A. I. Najafov, N. N. Mursakulov, M. M. Shirinov, T. G. Mammadov, I. A. Mamedova, N. A. Abdullayev","doi":"10.1134/S1063783425601948","DOIUrl":"10.1134/S1063783425601948","url":null,"abstract":"<p>The alloys of the TlInTe<sub>2</sub>–Fe system were studied by differential thermal analysis, X-ray diffraction, and microstructural analysis. The solubility range of iron in the TlInTe<sub>2</sub> compound was determined to be 5.0 at % at 296 K. Solid solutions formed on the basis of the ternary compound TlInTe<sub>2</sub> in the TlInTe<sub>2</sub>–Fe system are predominantly interstitial solid solutions, with iron atoms located mainly in the octahedral voids along the <i>c</i> axis between thallium ions. The appearance of a new mode at ~120 cm<sup>–1</sup> in the Raman scattering spectra of single-crystal TlInTe<sub>2</sub> samples doped with 5.0 at % Fe was observed. It was found that the incorporation of iron atoms into the TlInTe<sub>2</sub> crystal lattice lowers the activation energy of impurity conductivity and increases the crystal’s conductivity due to the rise in charge carrier concentration.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"635 - 641"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-11DOI: 10.1134/S106378342560102X
Malahat Kurbanova, Sabir Ali Siddique, Muhammad Ashfaq, Subramani Karthikeyan, Arzu Sadigova, Abel Maharramov, Suraj N. Mali, Hatem A. Abuelizz, Rashad Al-Salahi, Youness El Bakri, Suman Adhikari
The present study investigates non-covalent interactions of a hydrazine-imino-oxo hybrid Allyl 3‑oxo-2-(2-phenylhydrazone) butanoate (AOPB). The supramolecular assembly of AOPB is stabilized through various intermolecular contacts which are explored Hirshfeld surface analysis. The DFT computations conducted on AOPB provided evidence of its excellent stability, as manifested through the optimized molecular structure, the energy gap between the highest molecular orbital and lowest molecular orbital, as well as the interactions between molecules. The NBO analysis further validated the role of lone pair, bonding, and anti-bonding orbitals in mediating these interactions. DFT calculations inferred that AOPB possesses a high level of stability. These outcomes designate that AOPB is a potential candidate for further advancement as a potent inhibitor of Tyrosyl-DNA phosphodiesterase 1 DNA binding protein. In addition to that structural activity relationship studies are performed and based on that hit target Tyrosyl-DNA phosphodiesterase 1 DNA binding protein is taken for further molecular docking and molecular dynamics analysis.
{"title":"DFT Study, Molecular Docking, and Dynamics Simulation of Hydrazone-Based Compound","authors":"Malahat Kurbanova, Sabir Ali Siddique, Muhammad Ashfaq, Subramani Karthikeyan, Arzu Sadigova, Abel Maharramov, Suraj N. Mali, Hatem A. Abuelizz, Rashad Al-Salahi, Youness El Bakri, Suman Adhikari","doi":"10.1134/S106378342560102X","DOIUrl":"10.1134/S106378342560102X","url":null,"abstract":"<p>The present study investigates non-covalent interactions of a hydrazine-imino-oxo hybrid Allyl 3‑oxo-2-(2-phenylhydrazone) butanoate (AOPB). The supramolecular assembly of AOPB is stabilized through various intermolecular contacts which are explored Hirshfeld surface analysis. The DFT computations conducted on AOPB provided evidence of its excellent stability, as manifested through the optimized molecular structure, the energy gap between the highest molecular orbital and lowest molecular orbital, as well as the interactions between molecules. The NBO analysis further validated the role of lone pair, bonding, and anti-bonding orbitals in mediating these interactions. DFT calculations inferred that AOPB possesses a high level of stability. These outcomes designate that AOPB is a potential candidate for further advancement as a potent inhibitor of Tyrosyl-DNA phosphodiesterase 1 DNA binding protein. In addition to that structural activity relationship studies are performed and based on that hit target Tyrosyl-DNA phosphodiesterase 1 DNA binding protein is taken for further molecular docking and molecular dynamics analysis.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 8","pages":"688 - 703"},"PeriodicalIF":1.8,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}