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Unveiling the Properties of FrBX3 (B = Pb, Zr; X = Br, Cl) Inorganic Metal Halide Perovskites: Electronic, Optical, and Mechanical Perspectives 揭示FrBX3 (B = Pb, Zr; X = Br, Cl)无机金属卤化物钙钛矿的性质:电子、光学和力学观点
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-10-03 DOI: 10.1134/S106378342560219X
I. Bensehil, H. Baaziz, T. Ghellab, F. Djeghloul, S. Zaiou, Z. Charifi

This study provides a comprehensive investigation into the structural, optoelectronic, and elastic properties of inorganic metal halide perovskites FrBX3 (B = Pb, Zr; X = Br, Cl) using first-principles calculations based on density functional theory (DFT). Structural analysis confirms the stability of these perovskite phases through optimized lattice parameters and positive formation energies. Electronic band structure calculations reveal that FrZnX3 compounds exhibit direct band gaps, while FrPbX3 compounds possess indirect band gaps. Using the GGA-PBE functional, the band gaps are found to decrease in the order: FrPbCl3 (2.237 eV), FrPbBr3 (1.795 eV), FrZnCl3 (1.185 eV), and FrZnBr3 (0.057 eV), highlighting their potential for photovoltaic applications, particularly in solar energy harvesting. The optical properties, evaluated via dielectric functions, absorption coefficients, and refractive indices, demonstrate strong absorption in the visible region, suggesting their suitability as efficient light-absorbing materials. Furthermore, the elastic properties, including elastic constants, bulk modulus, shear modulus, and Poisson’s ratio, confirm the mechanical stability and ductility of all studied compounds, as they satisfy the Born stability criteria. Moreover, the calculated elastic anisotropy indicates that these materials exhibit moderate directional dependence in their mechanical response, which is advantageous for thin-film fabrication processes. Overall, the combination of favorable electronic, optical, and mechanical properties makes these Fr-based perovskites promising candidates for use in next-generation photovoltaic devices and other optoelectronic applications.

本研究利用基于密度泛函理论(DFT)的第一性原理计算,对无机金属卤化物钙钛矿FrBX3 (B = Pb, Zr; X = Br, Cl)的结构、光电和弹性特性进行了全面的研究。结构分析通过优化的晶格参数和正形成能证实了这些钙钛矿相的稳定性。电子能带结构计算表明,FrZnX3化合物具有直接带隙,而FrPbX3化合物具有间接带隙。利用GGA-PBE功能,发现带隙依次减小:FrPbCl3 (2.237 eV), FrPbBr3 (1.795 eV), FrZnCl3 (1.185 eV)和FrZnBr3 (0.057 eV),突出了它们在光伏应用,特别是太阳能收集方面的潜力。通过介电函数、吸收系数和折射率对其光学性质进行了评估,结果表明其在可见光区域具有很强的吸收性,表明其适合作为高效吸光材料。此外,包括弹性常数、体积模量、剪切模量和泊松比在内的弹性性能证实了所研究化合物的力学稳定性和延展性,因为它们满足Born稳定性准则。此外,计算得到的弹性各向异性表明,这些材料在力学响应中表现出适度的方向依赖性,这有利于薄膜的制备工艺。总的来说,良好的电子、光学和机械性能的结合使这些铁基钙钛矿成为下一代光伏器件和其他光电应用的有希望的候选者。
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引用次数: 0
Low-Temperature CVT Sintering of In2O3:Sn Ceramics In2O3:Sn陶瓷的低温CVT烧结
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-10-03 DOI: 10.1134/S1063783425601730
G. V. Colibaba, D. Yu. Rusnac, E. V. Monaico, N. Spalatu

A novel approach for sintering In2O3 ceramics using chemical vapor transport based on chlorine as a transport agent has been developed. Thermodynamic analysis has shown that this transport agent is the most promising among halogens for low-temperature sintering. The vapor phase composition of In2O3−MeO2−Cl2 (Me = Si, Ti, V, Ge, Zr, Sn, Ce, Hf) CVT systems has been calculated, and it has been shown that Cl2 should promote a fast dissolution rate of SnO2 and GeO2 dopants in ceramics. It has been experimentally demonstrated that in the case of using Cl2, a dense gaseous medium of In- and Sn-containing species is formed, which contributes to high uniformity of indium-tin oxide ceramics. The advantages of the proposed sintering method consists in: low sintering temperature of 800°C, increase in density by 20–30%, possibility of a decrease in resistivity by a factor of 102, higher thermal stability of CVT ceramics, as well as higher structural perfection of thin films deposited by high-power magnetron sputtering.

提出了一种以氯为输运剂的化学气相输运烧结In2O3陶瓷的新方法。热力学分析表明,该输运剂是低温烧结卤素中最有前途的输运剂。计算了In2O3 - MeO2 - Cl2 (Me = Si, Ti, V, Ge, Zr, Sn, Ce, Hf) CVT体系的气相组成,结果表明,Cl2能促进SnO2和GeO2掺杂剂在陶瓷中的快速溶解。实验证明,在使用Cl2的情况下,形成了一种致密的含铟和含锡的气体介质,这有助于铟锡氧化物陶瓷的高均匀性。所提出的烧结方法的优点是:烧结温度低,烧结温度为800℃,密度提高20-30%,电阻率降低102倍的可能性,CVT陶瓷的热稳定性更高,高功率磁控溅射沉积的薄膜结构更完美。
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引用次数: 0
Enhanced Performance and Reliability of Non-Uniform Channel Double-Gate Tunnel Field Effect Transistor with InGaSb Pocket Modulation 采用InGaSb口袋调制提高非均匀通道双栅隧道场效应晶体管的性能和可靠性
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-10-03 DOI: 10.1134/S1063783425602267
Rajeev Kumar Sachan,  Vedvrat, Shrish Bajpai

This study investigates the temperature-dependent behavior of the step-channel dual-metal double-gate tunnel field-effect transistor (SCP-DG-TFET) incorporating an InGaSb pocket, within the range of 250 to 450 K, highlighting its thermal reliability and operational robustness. The InGaSb pocket, characterized by a low bandgap and minimal lattice mismatch with GaSb, significantly enhances carrier injection efficiency and strengthens electrostatic control within the device. The SCP-DG-TFET exhibits remarkable switching characteristics, achieving a high Ion/Ioff ratio of 2.65 × 1013, alongside an improved subthreshold swing (SS) of 25.94 mV/dec, indicating efficient suppression of leakage currents. The device achieves a transconductance (gm) of 4.98 mS, which aids in maintaining a stable threshold voltage (Vth) of 0.384 V. Furthermore, it delivers an ON-state current (Ion) of 1.10 mA/µm and an OFF-state leakage current (Ioff) of 5.83 × 10−17 A/µm. These findings highlight the device’s capability for efficient switching, making it a promising candidate for future low-power and high-frequency electronic applications.

本研究研究了包含InGaSb口袋的阶梯沟道双金属双栅隧道场效应晶体管(SCP-DG-TFET)在250至450 K范围内的温度依赖行为,突出了其热可靠性和工作稳健性。InGaSb口袋具有低带隙和最小晶格不匹配的特点,显著提高了载流子注入效率,加强了器件内的静电控制。SCP-DG-TFET具有显著的开关特性,离子/开关比达到2.65 × 1013,亚阈值摆幅(SS)达到25.94 mV/dec,有效抑制了泄漏电流。该器件实现4.98 mS的跨导(gm),这有助于保持0.384 V的稳定阈值电压(Vth)。此外,它提供1.10 mA/µm的on状态电流(Ion)和5.83 × 10−17 A/µm的off状态泄漏电流(Ioff)。这些发现突出了该器件高效开关的能力,使其成为未来低功耗和高频电子应用的有希望的候选者。
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引用次数: 0
Temperature Evolution of Exciton and Impurity Emission Spectra of CdSe Single Crystals CdSe单晶激子温度演化及杂质发射光谱
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-10-03 DOI: 10.1134/S106378342560267X
K. Sushkevich, N. Siminel, N. Nedeoglo, A. Siminel, T. Iurieva, D. Nedeoglo

Photoluminescence (PL) spectra of CdSe single crystals grown by Bridgman technique are investigated in the wavelength range from 640 (1.938 eV) to 760 nm (1.632 eV) at temperatures between 15 and 200 K. PL spectra consist of a series of narrow bands of short-wavelength exciton emission and wider bands of impurity emission, the energy position and intensity of which are determined by the sample temperature. It is shown that the total exciton energy, including its kinetic energy, weakly depends on temperature and is equal to 29–30 meV for temperatures below 70 K, and then increases linearly to the value of 38 meV at 200 K. At low temperatures, the impurity PL band with phonon replica with the energy of LO-phonon equal to (25.6 ± 0.8) meV is attributed to donor–acceptor (D–A) pairs and is of self-activated nature. With increasing temperature, as shallow donors are ionized, this band is attributed to recombination of free electrons with the holes localized at acceptor level with the energy depth of 0.117 eV. In the short-wavelength range of PL spectra for CdSe samples annealed in the melt of Cd and CrCl3 salt, a new PL band is observed at 649 nm (1.9106 eV), with localization energy exceeding the band gap energy. This band is supposed to be caused by intracenter transitions within the background impurity ions, probably, of manganese. The possible structure of the radiative center is discussed.

在15 ~ 200 K的温度范围内,研究了Bridgman技术生长的CdSe单晶在640 (1.938 eV) ~ 760 nm (1.632 eV)波长范围内的光致发光(PL)光谱。PL光谱由一系列较窄的短波激子发射带和较宽的杂质发射带组成,其能量位置和强度由样品温度决定。结果表明,激子总能量(包括动能)对温度的依赖性较弱,在70 K以下时激子总能量为29 ~ 30 meV,在200 K时激子总能量线性增加至38 meV。在低温下,具有lo -声子能量为(25.6±0.8)meV的声子副本的杂质PL带属于供体-受体(D-A)对,具有自激活性质。随着温度的升高,由于浅层给体被电离,该带是由自由电子与位于受体能级的空穴复合而成的,能量深度为0.117 eV。在Cd和CrCl3盐熔体中退火的CdSe样品的PL光谱短波长范围内,在649 nm (1.9106 eV)处观察到一个新的PL波段,其局域能超过带隙能。这个波段被认为是由背景杂质离子(可能是锰)的中心内跃迁引起的。讨论了辐射中心的可能结构。
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引用次数: 0
The Quantum Dynamics of Two Coupled Cavities Containing Pumped Atomic Ensembles 包含泵浦原子系综的两个耦合腔的量子动力学
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-10-03 DOI: 10.1134/S1063783425601985
S. Cârlig, V. Ciornea, C. Gherman, M. A. Macovei

We investigate a hybrid quantum system consisting of two coupled optical cavities, each containing an ensemble of coherently pumped artificial or real two-level atoms. The system is modelled within the dressed-state formalism, accounting for coherent driving and dissipative interactions with independent electromagnetic reservoirs. Focusing on the regime where the Rabi frequency greatly exceeds the collective spontaneous emission and cavity decay rates, respectively, we derive the equations of motion characterizing the system and analyse its steady-state behaviours. Special attention is given to the scenario in which only one cavity contains a pumped multi-atom ensemble, and as a consequence, coherent excitation transfer to the second cavity occurs via cavity–cavity coupling. In this case, the mean photon number in the second cavity mode scales proportional to the squared number of atoms, i.e., N2 from the first cavity. The proposed model offers insight into light–matter interaction in composite systems and suggests viable mechanisms for engineering collective interactions and non-local excitation transport in quantum optical platforms.

我们研究了一个由两个耦合光学腔组成的混合量子系统,每个光学腔都包含相干泵浦的人工或真实两能级原子的系综。该系统在盛装态形式下建模,考虑了相干驱动和与独立电磁储层的耗散相互作用。针对拉比频率大大超过集体自发发射率和腔衰减率的情况,推导了表征系统的运动方程,并分析了其稳态行为。特别注意的情况下,其中只有一个腔包含泵浦的多原子系综,作为结果,相干激发转移到第二个腔通过腔腔耦合发生。在这种情况下,第二腔模式中的平均光子数与原子数的平方成正比,即来自第一腔的N2。所提出的模型提供了对复合系统中光-物质相互作用的见解,并为量子光学平台中工程集体相互作用和非局部激发输运提供了可行的机制。
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引用次数: 0
First-Principles Insights into the Effect of Ta Substitution on Structural, Electronic, Thermodynamic, and Thermoelectric Properties of GaNiSb Half-Heusler Alloys Ta取代对GaNiSb半heusler合金结构、电子、热力学和热电性能影响的第一性原理研究
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-10-03 DOI: 10.1134/S1063783425601870
M. A. Bouchentouf, A. Abdiche, G. Benabdellah, D. Ghaffor, M. Mokadem

The structural, electronic, thermodynamic, and thermoelectric properties of GaNi1–xTaxSb alloys (x = 0.125–0.875) have been investigated using the FP-LAPW method within the framework of the generalized gradient approximation (GGA) and the modified Becke–Johnson (mBJ) potential for electronic properties. The results predict that these alloys exhibit ferromagnetic behavior. The calculated band structures and Density of states reveal an overlap between the valence and conduction bands, indicating a metallic character for all compositions considered. Furthermore, the quasi-harmonic Debye model has been employed to evaluate the thermodynamic properties of the alloys over the temperature range of 0–1800 K at ambient pressure (P = 0 GPa). The thermoelectric performance was assessed through electrical conductivity, thermal conductivity, Seebeck coefficient, and power factor. Among the studied compositions, GaNi0.25Ta0.75Sb and GaNi0.75Ta0.25Sb exhibit the highest power factors, suggesting their potential for high-temperature thermoelectric applications.

在广义梯度近似(GGA)和修正的Becke-Johnson (mBJ)电势的框架下,利用FP-LAPW方法研究了GaNi1-xTaxSb合金(x = 0.125-0.875)的结构、电子、热力学和热电性能。结果表明,这些合金具有铁磁性。计算的能带结构和态密度揭示了价带和导带之间的重叠,表明所考虑的所有成分都具有金属特征。此外,采用准谐波Debye模型对合金在环境压力(P = 0 GPa)下0 ~ 1800 K温度范围内的热力学性能进行了评价。通过电导率、导热系数、塞贝克系数和功率因数评估热电性能。在所研究的组合物中,GaNi0.25Ta0.75Sb和GaNi0.75Ta0.25Sb表现出最高的功率因数,表明它们具有高温热电应用的潜力。
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引用次数: 0
Mn-Doped CdO Nanocrystalline Particles: Structural and Electrical Properties Modulation mn掺杂CdO纳米晶粒子:结构和电性能调制
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-10-03 DOI: 10.1134/S1063783424602224
Leelavati, Ishant Kumar, Vishal Verma, Pushpender Singh, Priya Thakur

Cadmium oxide (CdO) has been recognized as a promising diluted magnetic semiconductors (DMSs) for its various applications in spintronics, high sensitivity gas sensors and electrochemical sensors, etc. The present work reports the synthesis, structural, magnetic and dielectric properties of pure CdO and Mn-doped CdO nanoparticles with Mn-content (x = 7%) which were synthesized using simple co-precipitation method. Structural analysis via X-ray diffraction patterns revealed a cubic crystal structure in all materials, with no discernible impurity phases. FESEM images indicated a reduction in the grain size of CdO after doping of Mn-content. Magnetic measurements revealed a superparamagnetic behavior in CdO with magnetization (0.05 emu/g) at 5 K temperature and this superparamagnetic ordering was notably augmented through Mn-doping with magnetization (0.5 emu/g). In M(T) curves, blocking temperature (Tb) showed the transition from ferromagnetic to super paramagnetic behavior, also confirmed the presence of superparamagnetic behavior at low temperature in these nanoparticles. The dielectric constant is 25 × 102 and electrical conductivity is 5 × 10–5 Ω–1 cm–1 of CdO. Both are found to increase (dielectric constant 22 × 103 and electrical conductivity 15 × 10–5 Ω–1 cm–1) after doping of Mn-content, may be due to increase in free charge carriers.

氧化镉(CdO)在自旋电子学、高灵敏度气体传感器和电化学传感器等领域具有广泛的应用前景,是一种很有前途的稀释磁性半导体材料。本文报道了用简单共沉淀法合成的纯CdO和mn掺杂(x = 7%) CdO纳米颗粒的合成、结构、磁性和介电性能。通过x射线衍射图进行的结构分析显示,所有材料均为立方晶体结构,没有可识别的杂质相。FESEM图像显示,掺杂mn后,CdO的晶粒尺寸减小。磁性测量表明,在5 K温度下,当磁化强度为0.05 emu/g时,CdO具有超顺磁性,而当磁化强度为0.5 emu/g时,mn掺杂显著增强了这种超顺磁性的有序性。在M(T)曲线中,阻断温度(Tb)显示了从铁磁性到超顺磁性行为的转变,也证实了这些纳米颗粒在低温下存在超顺磁性行为。介电常数为25 × 102,电导率为5 × 10-5 Ω-1 cm-1。掺杂锰后,两者的介电常数均增加(22 × 103,电导率15 × 10-5 Ω-1 cm-1),这可能是由于自由载流子的增加。
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引用次数: 0
The Temperature Dependence of Elastic Constants and Zener Anisotropy in Single Crystal KTaO3 below Room Temperature 室温下KTaO3单晶弹性常数和齐纳各向异性的温度依赖性
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-10-03 DOI: 10.1134/S1063783425600773
C. H. Li, X. D. Ding, M. A. Carpenter, O. Aktas

We present the first experimental report of the complete elastic tensor of incipient ferroelectric KTaO3 between 9.6 and 307 K, using resonant ultrasound spectroscopy (RUS). The elastic constants C11 and C44, as well as the bulk and shear moduli increase roughly linearly upon cooling. Deviations from such dependence are a result of impurities. Zener anisotropy factor is 0.697 at room temperature and decreases to 0.627 at 9.6 K, indicating increasing elastic anisotropy. The temperature dependence of C12 is anomalous with no stiffening on cooling, which could be a result of different defect species influencing C12 but not the other constants, possibly due to defect anisotropy. The values of elastic constants and anisotropy are compared at room temperature and below 10 K with the literature reporting experimental results and density functional theory calculations.

本文首次利用共振超声光谱(RUS)研究了初始铁电KTaO3在9.6 ~ 307 K之间的完全弹性张量。弹性常数C11和C44以及体积模量和剪切模量在冷却后大致呈线性增加。偏离这种依赖是杂质的结果。常温下齐纳各向异性系数为0.697,9.6 K时减小至0.627,表明弹性各向异性增大。C12的温度依赖性是异常的,冷却时没有硬化,这可能是由于不同的缺陷种类影响了C12,而不是其他常数,可能是由于缺陷的各向异性。在室温和低于10 K的条件下,将弹性常数和各向异性值与文献报道的实验结果和密度泛函理论计算结果进行了比较。
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引用次数: 0
Structural, Optical, and Photocatalytic Properties of CdO/La2O3/PVP Nanocomposites by Microwave Irradiation Method 微波辐照法制备CdO/La2O3/PVP纳米复合材料的结构、光学和光催化性能
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-10-03 DOI: 10.1134/S1063783425602127
B. Suresh, M. Saravanan, S. Senthil, V. Ratchagar, A. Muthuvel, Manikandan Ayyar, Madhappan Santhamoorthy, Naved Azum

This study explores the structural, morphological, optical and photoluminescent properties of pure CdO, CdO/La2O3, and CdO/La2O3/PVP nanocomposites synthesized via the microwave irradiation method. XRD analysis confirms the face—centered cubic phase of CdO and the successful incorporation of La2O3 and PVP, evidenced by changes in lattice parameters and reduced crystallite sizes. Fourier transformed infrared spectroscopy (FTIR) analysis detects functional groups associated with La2O3 and PVP, confirming their integration into the CdO matrix. TEM reveals smaller particle sizes, improved dispersion and enhanced crystallinity in the composites. UV-Vis spectroscopy shows a bandgap increase from 3.4 eV (CdO) to 4.2 eV (CdO/La2O3/PVP), attributed to the Burstein–Moss effect and structural changes. PL studies indicate enhanced multi-band emissions and defect related transitions, suggesting improved charge separation and reduced recombination. Under UV irradiation, CdO/La2O3/PVP exhibits the highest photocatalytic degradation efficiency for MB dye (65.77% in 120 min), outperforming CdO/La2O3 (48%) and pure CdO (22%) due to smaller particle size, more active sites, and better charge carrier separation. These results demonstrate the potential of CdO-based nanocomposites in photocatalysis, optoelectronics and energy harvesting applications.

研究了微波辐照法制备的纯CdO、CdO/La2O3和CdO/La2O3/PVP纳米复合材料的结构、形态、光学和光致发光性能。XRD分析证实了CdO的面心立方相和La2O3和PVP的成功掺入,证明了晶格参数的变化和晶粒尺寸的减小。傅里叶变换红外光谱(FTIR)分析检测到与La2O3和PVP相关的官能团,证实它们集成到CdO矩阵中。透射电镜显示,复合材料的颗粒尺寸变小,分散性改善,结晶度增强。紫外可见光谱显示,由于Burstein-Moss效应和结构变化,带隙从3.4 eV (CdO)增加到4.2 eV (CdO/La2O3/PVP)。PL研究表明,多波段发射和缺陷相关跃迁增强,表明电荷分离得到改善,复合减少。在紫外照射下,CdO/La2O3/PVP对MB染料的光催化降解效率最高(在120 min内达到65.77%),优于CdO/La2O3(48%)和纯CdO(22%),因为其粒径更小,活性位点更多,载流子分离效果更好。这些结果证明了cdo基纳米复合材料在光催化、光电子学和能量收集方面的应用潜力。
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引用次数: 0
Optoelectronic and Magnetic Analysis of Mn and Fe Doped CrP Half-Metallic Using Ab-Initio Calculations 基于Ab-Initio计算的Mn和Fe掺杂CrP半金属的光电和磁性分析
IF 1.8 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-09-16 DOI: 10.1134/S1063783425600207
Naveen Mor, Dharamvir Singh Ahlawat

This study investigates the electrical and magnetic characteristics of chromium phosphide (CrP) through the introduction of transition metal (TM) atomssuch as Mn and Fe, as dopants. The FP-LAPW method has been employed under the density functional theory (DFT) framework, utilizing the WIEN2k software. The GGA approximation was utilized as the exchange-correlation potential to determine the solution of the Kohn–Sham equation. To study the band structure, the full potential linearized augmented plane wave (FP-LAPW) method has been utilized. The stable atomic structure of chromium phosphide has been derived from the zinc blende (ZnB) configuration. Furthermore, Cr1–xTMxP demonstrates a zinc-blende phase when doped with x = 0.125 and 0.25 concentrations. The phenomenon of half-metallic behavior is exhibited in CrP when the atomic constants are greater than or equal to 4.48 Å, and the muffin-tin radii (RMT) of Cr and P are set at 2.28 and 2.01, respectively. Analysis of Cr1–xTMxP (TM = Mn and Fe) at different doping concentrations (x) reveals that the material retains its half-metallic characteristics at low doping levels, but this feature declines as the doping levels increase. The magnetic moments of Cr0.75Fe0.25P are greater than those of Cr0.75Mn0.25P because of the interaction between the hybridized 3d-orbitals of the host Cr and the dopant Mn/Fe. These findings indicate that Cr1–xTMxP (TM = Mn and Fe) at low concentrations have great potential as materials for spintronic applications.

本研究通过引入过渡金属(TM)原子(如Mn和Fe)作为掺杂剂,研究了磷化铬(CrP)的电、磁特性。利用WIEN2k软件,在密度泛函理论(DFT)框架下采用FP-LAPW方法。利用GGA近似作为交换相关势来确定Kohn-Sham方程的解。利用全势线性化增广平面波(FP-LAPW)方法研究其能带结构。从闪锌矿(ZnB)的构型推导出了磷化铬的稳定原子结构。此外,当掺杂x = 0.125和0.25浓度时,Cr1-xTMxP表现出锌-混成相。当原子常数大于等于4.48 Å时,CrP表现出半金属行为,Cr和P的松饼半径(RMT)分别为2.28和2.01。对Cr1-xTMxP (TM = Mn和Fe)在不同掺杂浓度(x)下的分析表明,材料在低掺杂水平下仍保持其半金属特征,但随着掺杂水平的增加,该特征下降。Cr0.75Fe0.25P的磁矩大于Cr0.75Mn0.25P的磁矩,这是由于掺杂剂Mn/Fe与基体Cr的杂化3d轨道相互作用所致。这些发现表明,低浓度的Cr1-xTMxP (TM = Mn和Fe)作为自旋电子材料具有很大的应用潜力。
{"title":"Optoelectronic and Magnetic Analysis of Mn and Fe Doped CrP Half-Metallic Using Ab-Initio Calculations","authors":"Naveen Mor,&nbsp;Dharamvir Singh Ahlawat","doi":"10.1134/S1063783425600207","DOIUrl":"10.1134/S1063783425600207","url":null,"abstract":"<p>This study investigates the electrical and magnetic characteristics of chromium phosphide (CrP) through the introduction of transition metal (TM) atomssuch as Mn and Fe, as dopants. The FP-LAPW method has been employed under the density functional theory (DFT) framework, utilizing the WIEN2k software. The GGA approximation was utilized as the exchange-correlation potential to determine the solution of the Kohn–Sham equation. To study the band structure, the full potential linearized augmented plane wave (FP-LAPW) method has been utilized. The stable atomic structure of chromium phosphide has been derived from the zinc blende (ZnB) configuration. Furthermore, Cr<sub>1–<i>x</i></sub>TM<sub><i>x</i></sub>P demonstrates a zinc-blende phase when doped with <i>x</i> = 0.125 and 0.25 concentrations. The phenomenon of half-metallic behavior is exhibited in CrP when the atomic constants are greater than or equal to 4.48 Å, and the muffin-tin radii (RMT) of Cr and P are set at 2.28 and 2.01, respectively. Analysis of Cr<sub>1–<i>x</i></sub>TM<sub><i>x</i></sub>P (TM = Mn and Fe) at different doping concentrations (<i>x</i>) reveals that the material retains its half-metallic characteristics at low doping levels, but this feature declines as the doping levels increase. The magnetic moments of Cr<sub>0.75</sub>Fe<sub>0.25</sub>P are greater than those of Cr<sub>0.75</sub>Mn<sub>0.25</sub>P because of the interaction between the hybridized 3d-orbitals of the host Cr and the dopant Mn/Fe. These findings indicate that Cr<sub>1–<i>x</i></sub>TM<sub><i>x</i></sub>P (TM = Mn and Fe) at low concentrations have great potential as materials for spintronic applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 9","pages":"755 - 764"},"PeriodicalIF":1.8,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145062086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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