Pub Date : 2025-01-14DOI: 10.1134/S1063783424601863
Younes Errouas, Ilyass El Kadmiri, Youssef Ben-Ali, Driss Bria
A basic photonic device is engineered using two resonators attached either at two distinct points (forming a U-shaped structure) or at the same location (creating a crossed structure) along a waveguide. This configuration is designed to generate Fano and electromagnetically induced transparency (EIT) resonances within the transmission spectrum. These resonances arise due to internal interactions within the structure: Fano resonances occur when the resonance is near a transmission zero, while EIT resonances manifest when positioned between two transmission zeros. As an application, Fano resonances, characterized by their asymmetric profile, allow for the design of highly selective optical filters. These filters are capable of distinguishing between wavelengths that are very close together, which is crucial for telecommunication systems and integrated photonic circuits.
{"title":"Tunable Fano Resonance for Optimized Performance in High-Efficiency Photonic Filters","authors":"Younes Errouas, Ilyass El Kadmiri, Youssef Ben-Ali, Driss Bria","doi":"10.1134/S1063783424601863","DOIUrl":"10.1134/S1063783424601863","url":null,"abstract":"<p>A basic photonic device is engineered using two resonators attached either at two distinct points (forming a U-shaped structure) or at the same location (creating a crossed structure) along a waveguide. This configuration is designed to generate Fano and electromagnetically induced transparency (EIT) resonances within the transmission spectrum. These resonances arise due to internal interactions within the structure: Fano resonances occur when the resonance is near a transmission zero, while EIT resonances manifest when positioned between two transmission zeros. As an application, Fano resonances, characterized by their asymmetric profile, allow for the design of highly selective optical filters. These filters are capable of distinguishing between wavelengths that are very close together, which is crucial for telecommunication systems and integrated photonic circuits.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 12","pages":"634 - 641"},"PeriodicalIF":0.9,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142976596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-14DOI: 10.1134/S1063783424601504
Huda I. Ahemad, Ganesh E. Patil, Sarika D. Shinde, Dnyaneshwari Y. Patil, Gotan H. Jain, D. D. Kajale, S. R. Gadakh, Sharad B. Patil
In this study, copper sulfate pentahydrate (CuSO4·5H2O) single crystals, measuring up to 8 × 8 × 2 cm, were successfully grown using the hot plate technique. The synthesized crystals were characterized using several analytical methods, including X-ray diffraction (XRD), UV-visible spectroscopy, Brunauer–Emmett–Teller (BET) surface area analysis, and cyclic voltammetry (CV). XRD analysis confirmed that the crystals possess a triclinic structure. Optical property assessments revealed broad transparency in the visible spectrum, with a band gap (Eg) of 4.02 eV as determined by UV-visible spectroscopy. BET analysis showed a surface area of 1.015 cm2/g and a pore volume of 0.0025 cm3/g. Additionally, etching experiments were performed over varying durations to preserve the crystal structure and investigate surface behavior. These findings provide valuable insights into both the growth and properties of CuSO4·5H2O crystals, suggesting their potential applications in various scientific fields.
{"title":"Synthesis and Characterization of Copper Sulfate Single Crystals","authors":"Huda I. Ahemad, Ganesh E. Patil, Sarika D. Shinde, Dnyaneshwari Y. Patil, Gotan H. Jain, D. D. Kajale, S. R. Gadakh, Sharad B. Patil","doi":"10.1134/S1063783424601504","DOIUrl":"10.1134/S1063783424601504","url":null,"abstract":"<p>In this study, copper sulfate pentahydrate (CuSO<sub>4</sub>·5H<sub>2</sub>O) single crystals, measuring up to 8 × 8 × 2 cm, were successfully grown using the hot plate technique. The synthesized crystals were characterized using several analytical methods, including X-ray diffraction (XRD), UV-visible spectroscopy, Brunauer–Emmett–Teller (BET) surface area analysis, and cyclic voltammetry (CV). XRD analysis confirmed that the crystals possess a triclinic structure. Optical property assessments revealed broad transparency in the visible spectrum, with a band gap (<i>E</i><sub>g</sub>) of 4.02 eV as determined by UV-visible spectroscopy. BET analysis showed a surface area of 1.015 cm<sup>2</sup>/g and a pore volume of 0.0025 cm<sup>3</sup>/g. Additionally, etching experiments were performed over varying durations to preserve the crystal structure and investigate surface behavior. These findings provide valuable insights into both the growth and properties of CuSO<sub>4</sub>·5H<sub>2</sub>O crystals, suggesting their potential applications in various scientific fields.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 12","pages":"642 - 652"},"PeriodicalIF":0.9,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142976634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-14DOI: 10.1134/S1063783424601322
I. A. Mamedova, Z. A. Jahangirli, S. S. Osmanova, N. A. Abdullayev
Elastic constants сij of thiogalates CdGa2S4, CdGa2Se4, CdGa2Te4, and ZnGa2Sе4 are calculated using the density functional theory (DFT). The elastic moduli B have been calculated. The regularities have been found in the dependences of the optical phonon frequencies on the atomic masses in ({{{text{A}}}^{{{text{II}}}}}{text{B}}_{2}^{{{text{III}}}}{text{C}}_{4}^{{{text{VI}}}}) compounds. The force constants of interatomic bonds in CdGa2Te4 and ZnGa2Sе4 compounds are determined.
{"title":"Elastic Properties and Regularities in Frequencies of Optical Phonons of ({{{mathbf{A}}}^{{{mathbf{II}}}}}{mathbf{B}}_{2}^{{{mathbf{III}}}}{mathbf{C}}_{4}^{{{mathbf{VI}}}}) Compounds","authors":"I. A. Mamedova, Z. A. Jahangirli, S. S. Osmanova, N. A. Abdullayev","doi":"10.1134/S1063783424601322","DOIUrl":"10.1134/S1063783424601322","url":null,"abstract":"<p>Elastic constants <i>с</i><sub><i>ij</i></sub> of thiogalates CdGa<sub>2</sub>S<sub>4</sub>, CdGa<sub>2</sub>Se<sub>4</sub>, CdGa<sub>2</sub>Te<sub>4</sub>, and ZnGa<sub>2</sub>Sе<sub>4</sub> are calculated using the density functional theory (DFT). The elastic moduli <i>B</i> have been calculated. The regularities have been found in the dependences of the optical phonon frequencies on the atomic masses in <span>({{{text{A}}}^{{{text{II}}}}}{text{B}}_{2}^{{{text{III}}}}{text{C}}_{4}^{{{text{VI}}}})</span> compounds. The force constants of interatomic bonds in CdGa<sub>2</sub>Te<sub>4</sub> and ZnGa<sub>2</sub>Sе<sub>4</sub> compounds are determined.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 11","pages":"529 - 536"},"PeriodicalIF":0.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142636796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-14DOI: 10.1134/S1063783424601334
Ibrahim Morad, Ghada El-Barbary, Said M. El-Sheikh, Y. A. Sharaby
Ethylenediamine-doped (EDA-doped) polyaniline (PANI) films were deposited via spin coating technique on a glass substrate. The samples were annealed at different times and temperatures. The characterizations of the prepared PANI films were described by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Fourier transform infrared spectroscopy (FT-IR). It is found that the conductivity changes under deep mouth exhaling for 150/1 h sample is 1.65 times faster than the films annealed at 100°C/4 h. The response and recovery time of the 150/1 h EDA-doped PANI film is decreased by order of 0.63 and 1.29 s than those films dried at 100°C for 4 h, respectively. The 150/1 h EDA doped PANI film during deep exhaling its conductivity increased abruptly from 2.2 × 10–7 to 0.026 S/cm–1. In a few seconds, following an inhalation, there occurs a complete transition to the dry state conductivity. Furthermore, the increment in conductivity of the EDA-doped PANI films was determined at various RH levels (20, 40, 60, 80, and 90%) with exposure and evacuation of the humid air. The doped PANI sample annealed at 150°C for 1 h exhibit the highest conductivity at 90% RH. The conductivity was increased from 2.16 × 10–7 S/cm for the insulating state at the dry state to 0.23 S/cm for the semiconducting state at 90% RH. Consequently, the 150/1 h sample showed an increase in conductivity by order of 106 at 90% RH. For all samples, the conductivity progressively rises as the RH value increases till 90% of RH value samples exhibit an abrupt increase in conductivity except the 100°C/4 h sample. The highest conductivity is 0.041 S/cm at 90% RH obtained for the case of 150/30 min sample, whereas the 150/1 min and 100/4 h films show maximum conductivity of 0.027 and 0.007, respectively.
通过旋涂技术在玻璃基底上沉积了掺乙二胺(EDA)的聚苯胺(PANI)薄膜。样品在不同的时间和温度下退火。通过 X 射线衍射 (XRD)、透射电子显微镜 (TEM) 和傅立叶变换红外光谱 (FT-IR) 对制备的 PANI 薄膜进行了表征。研究发现,在深口呼气的情况下,150/1 h 样品的电导率变化速度是 100°C/4 h 退火薄膜的 1.65 倍;与 100°C 4 h 干燥的薄膜相比,150/1 h EDA 掺杂 PANI 薄膜的响应时间和恢复时间分别缩短了 0.63 和 1.29 秒。150/1 h EDA 掺杂 PANI 薄膜在深呼气过程中的电导率从 2.2 × 10-7 骤增至 0.026 S/cm-1。在吸气后的几秒钟内,电导率完全转变为干态电导率。此外,还测定了掺杂 EDA 的 PANI 薄膜在不同相对湿度(20%、40%、60%、80% 和 90%)下暴露和排出潮湿空气时的电导率增量。在 150°C 下退火 1 小时的掺杂 PANI 样品在 90% 相对湿度下的电导率最高。导电率从干燥状态下绝缘态的 2.16 × 10-7 S/cm 提高到 90% 相对湿度下半导体态的 0.23 S/cm。因此,在 90% 相对湿度条件下,150/1 h 样品的电导率增加了 106 倍。所有样品的电导率都随着相对湿度值的增加而逐渐上升,直到相对湿度值达到 90% 时,除 100°C/4 h 样品外,其他样品的电导率都会突然增加。150/30 分钟样品在 90% 相对湿度下的最高电导率为 0.041 S/cm,而 150/1 分钟和 100/4 小时薄膜的最高电导率分别为 0.027 和 0.007。
{"title":"Investigation of Insulator-to-Semiconductor Fast Transition in Sheet-Like Polyaniline Films","authors":"Ibrahim Morad, Ghada El-Barbary, Said M. El-Sheikh, Y. A. Sharaby","doi":"10.1134/S1063783424601334","DOIUrl":"10.1134/S1063783424601334","url":null,"abstract":"<p>Ethylenediamine-doped (EDA-doped) polyaniline (PANI) films were deposited via spin coating technique on a glass substrate. The samples were annealed at different times and temperatures. The characterizations of the prepared PANI films were described by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Fourier transform infrared spectroscopy (FT-IR). It is found that the conductivity changes under deep mouth exhaling for 150/1 h sample is 1.65 times faster than the films annealed at 100°C/4 h. The response and recovery time of the 150/1 h EDA-doped PANI film is decreased by order of 0.63 and 1.29 s than those films dried at 100°C for 4 h, respectively. The 150/1 h EDA doped PANI film during deep exhaling its conductivity increased abruptly from 2.2 × 10<sup>–7</sup> to 0.026 S/cm<sup>–1</sup>. In a few seconds, following an inhalation, there occurs a complete transition to the dry state conductivity. Furthermore, the increment in conductivity of the EDA-doped PANI films was determined at various RH levels (20, 40, 60, 80, and 90%) with exposure and evacuation of the humid air. The doped PANI sample annealed at 150°C for 1 h exhibit the highest conductivity at 90% RH. The conductivity was increased from 2.16 × 10<sup>–7</sup> S/cm for the insulating state at the dry state to 0.23 S/cm for the semiconducting state at 90% RH. Consequently, the 150/1 h sample showed an increase in conductivity by order of 10<sup>6</sup> at 90% RH. For all samples, the conductivity progressively rises as the RH value increases till 90% of RH value samples exhibit an abrupt increase in conductivity except the 100°C/4 h sample. The highest conductivity is 0.041 S/cm at 90% RH obtained for the case of 150/30 min sample, whereas the 150/1 min and 100/4 h films show maximum conductivity of 0.027 and 0.007, respectively.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 11","pages":"505 - 515"},"PeriodicalIF":0.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142636966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-14DOI: 10.1134/S1063783424601231
Khairiah Alshehri
A modified Bridgman technique was used to crystallize the Tl4In3GaS8 compound. The rate of change in the thermoelectric power (TEP) as a function of temperature of the Tl4In3GaS8 compound is measured within the temperature range (218–402 K). Measurements revealed that the conductivity of the crystals was n-type. Investigations were conducted into the connection between TEP, charge carrier concentration, and electrical conductivity. The experimental results were used to calculate a number of physical properties, including as mobilities, diffusion coefficients, diffusion lengths, effective masses, and carrier relaxation periods. The overall behavior of the semiconductor is shown by these features. According to our findings, asgrown Tl4In3GaS8 crystals are typically n-type and have the potential to be employed as thermoelectric power generating possibilities.
采用改良布里奇曼技术使 Tl4In3GaS8 化合物结晶。在温度范围(218-402 K)内,测量了 Tl4In3GaS8 化合物热电功率(TEP)随温度变化的速率。测量结果表明,晶体的导电性为 n 型。对 TEP、电荷载流子浓度和导电性之间的联系进行了研究。实验结果用于计算一系列物理特性,包括迁移率、扩散系数、扩散长度、有效质量和载流子弛豫期。这些特征显示了半导体的整体行为。根据我们的研究结果,asgrown Tl4In3GaS8 晶体是典型的 n 型,有可能用作热电发电。
{"title":"Thermoelectric Power Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals","authors":"Khairiah Alshehri","doi":"10.1134/S1063783424601231","DOIUrl":"10.1134/S1063783424601231","url":null,"abstract":"<p>A modified Bridgman technique was used to crystallize the Tl<sub>4</sub>In<sub>3</sub>GaS<sub>8</sub> compound. The rate of change in the thermoelectric power (TEP) as a function of temperature of the Tl<sub>4</sub>In<sub>3</sub>GaS<sub>8</sub> compound is measured within the temperature range (218–402 K). Measurements revealed that the conductivity of the crystals was n-type. Investigations were conducted into the connection between TEP, charge carrier concentration, and electrical conductivity. The experimental results were used to calculate a number of physical properties, including as mobilities, diffusion coefficients, diffusion lengths, effective masses, and carrier relaxation periods. The overall behavior of the semiconductor is shown by these features. According to our findings, asgrown Tl<sub>4</sub>In<sub>3</sub>GaS<sub>8</sub> crystals are typically <i>n</i>-type and have the potential to be employed as thermoelectric power generating possibilities.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 11","pages":"516 - 520"},"PeriodicalIF":0.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142636795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-14DOI: 10.1134/S1063783424601243
Mahendra S. Shinde, Abhinay S. Mandawade, Manoj A. More, Swapnil S. Tayade, Laxman N. Bhoy, Ganesh E. Patil
This paper successfully synthesized Bismuth oxide (Bi2O3) nanoparticles (NPs) using the sol–gel method as Bismuth nitrate pentahydrate as a precursor. The average crystallite size of the NPs was characterized by X-ray diffraction (XRD) analysis and the size of the NPs found to be 17 nm. For the band gap measurement UV-visible spectra of NPs were recorded and it was found to be 2.7 eV. The surface morphology of Bi2O3 NPs was examined through field emission scanning electron microscopy (FESEM) showing spherical nature-like morphology. The gas sensor was fabricated using as-prepared Bi2O3 NPs by standard screen-printing technique and it was tested for various gases such as NH3, NO2, ethanol, LPG, and methanol as a function of operating temperature. The effect of operating temperature and gas concentration were investigated in detail to understand Bi2O3 NPs sensor for NH3 gas and found to be very efficient.
{"title":"Ammonia Gas Sensing Properties of Bismuth Oxide Thick Films and Its Structural, Optical, Morphological Characterization","authors":"Mahendra S. Shinde, Abhinay S. Mandawade, Manoj A. More, Swapnil S. Tayade, Laxman N. Bhoy, Ganesh E. Patil","doi":"10.1134/S1063783424601243","DOIUrl":"10.1134/S1063783424601243","url":null,"abstract":"<p>This paper successfully synthesized Bismuth oxide (Bi<sub>2</sub>O<sub>3</sub>) nanoparticles (NPs) using the sol–gel method as Bismuth nitrate pentahydrate as a precursor. The average crystallite size of the NPs was characterized by X-ray diffraction (XRD) analysis and the size of the NPs found to be 17 nm. For the band gap measurement UV-visible spectra of NPs were recorded and it was found to be 2.7 eV. The surface morphology of Bi<sub>2</sub>O<sub>3</sub> NPs was examined through field emission scanning electron microscopy (FESEM) showing spherical nature-like morphology. The gas sensor was fabricated using as-prepared Bi<sub>2</sub>O<sub>3</sub> NPs by standard screen-printing technique and it was tested for various gases such as NH<sub>3</sub>, NO<sub>2</sub>, ethanol, LPG, and methanol as a function of operating temperature. The effect of operating temperature and gas concentration were investigated in detail to understand Bi<sub>2</sub>O<sub>3</sub> NPs sensor for NH<sub>3</sub> gas and found to be very efficient.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 11","pages":"537 - 542"},"PeriodicalIF":0.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142636962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, we explore the magnetic, optical, and antibacterial properties of ({text{CoF}}{{{text{e}}}_{2}}{{{text{O}}}_{4}}) (CFO), ({text{C}}{{{text{o}}}_{{0.98}}}{text{A}}{{{text{g}}}_{{0.02}}}{text{F}}{{{text{e}}}_{2}}{{{text{O}}}_{4}}) (CAFO), and ({text{C}}{{{text{o}}}_{{0.98}}}{text{T}}{{{text{i}}}_{{0.02}}}{text{F}}{{{text{e}}}_{2}}{{{text{O}}}_{4}}) (CTFO) and spinel ferrite nanocrystals. The XRD analysis of these crystals reveals a single-phase cubic structure of (Fdbar {3}m) space group with a crystallite size of 45, 46, and 41 nm, respectively. The room temperature magnetic measurement shows that CTFO has the highest saturation and remanent magnetization, whereas CFO has the highest coercivity and magnetic squareness ratio. Optical properties of these samples have been taken in the range of 300–900 nm. The band gap is calculated using Tauc’s plot, and it decreases with the doping of ({text{A}}{{{text{g}}}^{ + }}) and ({text{T}}{{{text{i}}}^{{4 + }}}) ions. Antibacterial studies of these samples have been done by disc diffusion method for Gram-positive and Gram-negative bacteria, Staphylococcus aureus (S. aureus) and Escherichia coli (E. coli), respectively. The compositions have shown better antibacterial response for S. aureus over E. coli. The 200 mg/mL CTFO sample has shown the most effective result against S. aureus bacteria, with 18 mm diameter value of zone of inhibition.
{"title":"Magnetic, Optical, and Antibacterial Properties of Ag+ and Ti4+ Doped Cobalt Ferrite Nanocrystals","authors":"Krishna Kumar Keshri, Manoj Kumar Rout, Rajdeep Saha, Sunita Keshri","doi":"10.1134/S1063783424601255","DOIUrl":"10.1134/S1063783424601255","url":null,"abstract":"<p>In this paper, we explore the magnetic, optical, and antibacterial properties of <span>({text{CoF}}{{{text{e}}}_{2}}{{{text{O}}}_{4}})</span> (CFO), <span>({text{C}}{{{text{o}}}_{{0.98}}}{text{A}}{{{text{g}}}_{{0.02}}}{text{F}}{{{text{e}}}_{2}}{{{text{O}}}_{4}})</span> (CAFO), and <span>({text{C}}{{{text{o}}}_{{0.98}}}{text{T}}{{{text{i}}}_{{0.02}}}{text{F}}{{{text{e}}}_{2}}{{{text{O}}}_{4}})</span> (CTFO) and spinel ferrite nanocrystals. The XRD analysis of these crystals reveals a single-phase cubic structure of <span>(Fdbar {3}m)</span> space group with a crystallite size of 45, 46, and 41 nm, respectively. The room temperature magnetic measurement shows that CTFO has the highest saturation and remanent magnetization, whereas CFO has the highest coercivity and magnetic squareness ratio. Optical properties of these samples have been taken in the range of 300–900 nm. The band gap is calculated using Tauc’s plot, and it decreases with the doping of <span>({text{A}}{{{text{g}}}^{ + }})</span> and <span>({text{T}}{{{text{i}}}^{{4 + }}})</span> ions. Antibacterial studies of these samples have been done by disc diffusion method for Gram-positive and Gram-negative bacteria, <i>Staphylococcus aureus</i> (<i>S</i>. <i>aureus</i>) and <i>Escherichia coli</i> (<i>E. coli</i>), respectively. The compositions have shown better antibacterial response for <i>S</i>. <i>aureus</i> over <i>E. coli</i>. The 200 mg/mL CTFO sample has shown the most effective result against <i>S. aureus</i> bacteria, with 18 mm diameter value of zone of inhibition.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 11","pages":"521 - 528"},"PeriodicalIF":0.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142636965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-14DOI: 10.1134/S106378342460153X
V. M. Salmanov, A. G. Guseinov, M. A. Jafarov, R. M. Mammadov, M. M. Dzhakhangirov, T. A. Mamedova, F. Sh. Akhmedova
GaS Nanoparticles prepared by laser ablation in a liquid. The nanoparticle structure is studied by XRD, SEM, and EDAX methods. The energy gap width and the character of optical transitions are determined using the optical absorption and photoluminescence spectra.
在液体中通过激光烧蚀制备 GaS 纳米粒子。通过 XRD、SEM 和 EDAX 方法研究了纳米粒子的结构。利用光吸收光谱和光致发光光谱确定了能隙宽度和光学跃迁特性。
{"title":"Optical Properties of GaS Nanoparticles Prepared by Laser Ablation","authors":"V. M. Salmanov, A. G. Guseinov, M. A. Jafarov, R. M. Mammadov, M. M. Dzhakhangirov, T. A. Mamedova, F. Sh. Akhmedova","doi":"10.1134/S106378342460153X","DOIUrl":"10.1134/S106378342460153X","url":null,"abstract":"<p>GaS Nanoparticles prepared by laser ablation in a liquid. The nanoparticle structure is studied by XRD, SEM, and EDAX methods. The energy gap width and the character of optical transitions are determined using the optical absorption and photoluminescence spectra.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 11","pages":"484 - 488"},"PeriodicalIF":0.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142636798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-14DOI: 10.1134/S1063783424601486
Krishna Kumar Mishra
In this study, we delve into the potential of the halide perovskite material Ca3SbBr3 for solar cell applications, using QuantumATK simulation tool. By employing DFT with both GGA-PBE and HSE06 functionals, we thoroughly explored its structural, mechanical, electronic and optical properties. Our study reveals that Ca3SbBr3 adopts a cubic crystal structure. The lattice constant for this structure is measured to be 6.336 Å. Notably, the material exhibits a direct band gap of 1.782 eV with GGA and 2.592 eV with HSE06, underscoring its efficiency in solar energy conversion. Moreover, Ca3SbBr3 shows strong light absorption, with significant peaks at 629, 396 cm–1 (3.52 eV) and 245, 951 cm–1 (3.76 eV), and refractive indices of 2.10 (GGA) and 1.825 (HSE06). These results suggest that Ca3SbBr3 holds great promise as a next-generation solar material, thanks to its advantageous electronic and optical properties.
{"title":"Evaluating the Potential of Ca3SbBr3 Halide Perovskite for Photovoltaics: A Structural, Mechanical, and Optoelectronic Study Using GGA-PBE and HSE06 Functionals","authors":"Krishna Kumar Mishra","doi":"10.1134/S1063783424601486","DOIUrl":"10.1134/S1063783424601486","url":null,"abstract":"<p>In this study, we delve into the potential of the halide perovskite material Ca<sub>3</sub>SbBr<sub>3</sub> for solar cell applications, using QuantumATK simulation tool. By employing DFT with both GGA-PBE and HSE06 functionals, we thoroughly explored its structural, mechanical, electronic and optical properties. Our study reveals that Ca<sub>3</sub>SbBr<sub>3</sub> adopts a cubic crystal structure. The lattice constant for this structure is measured to be 6.336 Å. Notably, the material exhibits a direct band gap of 1.782 eV with GGA and 2.592 eV with HSE06, underscoring its efficiency in solar energy conversion. Moreover, Ca<sub>3</sub>SbBr<sub>3</sub> shows strong light absorption, with significant peaks at 629, 396 cm<sup>–1</sup> (3.52 eV) and 245, 951 cm<sup>–1</sup> (3.76 eV), and refractive indices of 2.10 (GGA) and 1.825 (HSE06). These results suggest that Ca<sub>3</sub>SbBr<sub>3</sub> holds great promise as a next-generation solar material, thanks to its advantageous electronic and optical properties.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 11","pages":"464 - 475"},"PeriodicalIF":0.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142636799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-14DOI: 10.1134/S1063783424601309
Yogesh B. Aher, Gotan H. Jain, Sarika D. Shinde, Abhinay S. Mandawade, Laxmi D. Sonawane, Dnyaneshwari Y. Patil, Huda I. Ahemad, Matthew D. Femi, Manoj A. More, Dnyaneshwar D. Kajale, Ganesh E. Patil
Nanostructured tungsten oxide (WO3) thin-film sensor materials were deposited on a glass substrate by spray pyrolysis technique (SPT) and investigated their gas sensor properties. As prepared WO3 thin films were characterized by different techniques such as UV-Visible Spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM). The optical band gap of film was determined using the absorption spectra obtained with UV-visible spectroscopy which was found to be 2.9 eV. XRD results of the as prepared WO3 exhibits crystalline structure and favored alignment along the (002) axis. The spray pyrolysis technique used for the preparation of the WO3 thin film often results in a porous and rough surface with a network of interconnected fiber-like structures., which are ideal for gas sensor applications due to increased surface exposure. The gas sensing performance of the WO3 thin film was tested towards various gases such as H2S, NH3, LPG, H2, ethanol, CO2, Cl2 at different operating temperatures. The WO3 thin films exhibited their highest gas response to H2S gas at an operating temperature of 50°C, with fast response and recovery times of 18 and 31 s, respectively. These results suggest that WO3 thin films could serve as effective H2S gas sensors.
{"title":"Synthesis and Characterization of WO3 Thin Film by Spray Pyrolysis for Gas Sensing Application","authors":"Yogesh B. Aher, Gotan H. Jain, Sarika D. Shinde, Abhinay S. Mandawade, Laxmi D. Sonawane, Dnyaneshwari Y. Patil, Huda I. Ahemad, Matthew D. Femi, Manoj A. More, Dnyaneshwar D. Kajale, Ganesh E. Patil","doi":"10.1134/S1063783424601309","DOIUrl":"10.1134/S1063783424601309","url":null,"abstract":"<p>Nanostructured tungsten oxide (WO<sub>3</sub>) thin-film sensor materials were deposited on a glass substrate by spray pyrolysis technique (SPT) and investigated their gas sensor properties. As prepared WO<sub>3</sub> thin films were characterized by different techniques such as UV-Visible Spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM). The optical band gap of film was determined using the absorption spectra obtained with UV-visible spectroscopy which was found to be 2.9 eV. XRD results of the as prepared WO<sub>3</sub> exhibits crystalline structure and favored alignment along the (002) axis. The spray pyrolysis technique used for the preparation of the WO<sub>3</sub> thin film often results in a porous and rough surface with a network of interconnected fiber-like structures., which are ideal for gas sensor applications due to increased surface exposure. The gas sensing performance of the WO<sub>3</sub> thin film was tested towards various gases such as H<sub>2</sub>S, NH<sub>3</sub>, LPG, H<sub>2</sub>, ethanol, CO<sub>2</sub>, Cl<sub>2</sub> at different operating temperatures. The WO<sub>3</sub> thin films exhibited their highest gas response to H<sub>2</sub>S gas at an operating temperature of 50°C, with fast response and recovery times of 18 and 31 s, respectively. These results suggest that WO<sub>3</sub> thin films could serve as effective H<sub>2</sub>S gas sensors.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 11","pages":"497 - 504"},"PeriodicalIF":0.9,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142636964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}