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Biogenic Silver Oxide Nanoparticles for Enhanced Electrochemical (N-(4-Hydroxyphenyl)Acetamide) Sensing 用于增强电化学(N-(4-羟基苯基)乙酰胺)传感的生物纳米氧化银粒子
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-09-04 DOI: 10.1134/S1063783424600638
Syed Yaseen Ahmed, D. Bharathi, Paulson Emerson, A. Muthuvel, Wajeeha Sultana, Balu Mahendran Gunasekaran

Nowadays, the identification of hepatotoxic compounds is necessary for clinical diagnosis as well as quantity management of their pharmaceutical formulations. In this study, silver oxide modified glassy carbon electrode synthesized using leaf extract of Ocimum tenuiflorum is adopted for sensing of (N-(4-hydroxyphenyl)acetamide). This drug molecules has regularly used pain killer that might cause liver injury under specific conditions. In addition, their physiochemical properties of bio-synthesized AgO nanoparticles have been examined with appropriate characterization techniques. Crystalline characteristic of AgO was non-destructively examined by the XRD-structural analysis. Structural examination claimed that the bioconstitutents of Ocimum tenuiflorum was effectively governs silver oxide formations from metal ions. The FT-IR vibrational assignments illustrate the AgO nanoparticles surface was influenced by some of the phytocompounds. Moreover, the overall particle’s uniformity and their distribution has been considerably controlled by the biomolecules. When oxidizing (N-(4-hydroxyphenyl)acetamide) in 0.1 M H2SO4, AgO NPs demonstrated superior electrocatalytic activity compared to bare SPE, and the separated oxidation peak potentials permitted simultaneous detection of the targets with broad linear ranges from 5 × 10–6 to 3.4 × 10–6 mol L–1 low detection limit 8.5 × 10–6 mol L–1, and outstanding precision and accuracy (S/N = 3). The approach has been effectively used to identify ACOP in pharmaceutical pills because AgO nanoparticles demonstrate good stability, reproducibility, and repeatability.

摘要 如今,肝毒性化合物的鉴定对于临床诊断及其药物制剂的数量管理十分必要。本研究采用氧化银修饰的玻璃碳电极,利用茵芋叶提取物合成,用于检测(N-(4-羟基苯基)乙酰胺)。这种药物分子是常用的止痛剂,在特定条件下可能会对肝脏造成损伤。此外,还利用适当的表征技术研究了生物合成的氧化银纳米粒子的理化性质。通过 XRD 结构分析对氧化银的结晶特性进行了非破坏性检测。结构分析表明,Ocimum tenuiflorum 的生物成分有效地控制了金属离子氧化银的形成。傅立叶变换红外光谱(FT-IR)的振动赋值表明,氧化银纳米粒子表面受到某些植物化合物的影响。此外,颗粒的整体均匀性及其分布也在很大程度上受到生物大分子的控制。在 0.1 M H2SO4 中氧化(N-(4-羟基苯基)乙酰胺)时,与裸 SPE 相比,AgO NPs 表现出更优越的电催化活性,分离的氧化峰电位允许同时检测目标物,线性范围从 5 × 10-6 到 3.4 × 10-6 mol L-1 不等,检测限低至 8.5 × 10-6 mol L-1,精度和准确度出色(S/N = 3)。由于 AgO 纳米粒子具有良好的稳定性、再现性和重复性,该方法已被有效地用于鉴定药丸中的 ACOP。
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引用次数: 0
Shearing-Type Electron Emission 剪切型电子发射
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-09-04 DOI: 10.1134/S1063783424600675
Hai Lin, Chengpu Liu

“Stretching” and “shearing” are two basic types of depriving neutral matter from a solid. In principle, depriving charged matter from a solid also have similar counterparts. By now, most investigations on electron emission, which is a typical example of depriving charged matter, from a solid are focused on the “stretching” type while another type is rarely considered. The purpose of this work is to explore the possibility and feasibility of another type of depriving charged matter from a solid. Based on quantum many-body theory, this work reveals a feasible technique route of “shearing” electrons from the surface of a metal. Exchange potential among surface electrons can significantly modify dispersion relation curve of the surface 2D band and hence its electronic structure. Flatten dispersion relation curve near the highest occupied state enables a small scalar potential perturbation (at eV-level) to induce a large increment in parallel-to-surface momentum (hbar {{k}_{{||}}}) as well as that in kinetic energy (KE) (at tens eV-level). Such a high KE is sufficiently to warrant emitted electrons to surpass, rather than tunnel, barrier in vacuum. This can be achieved even for external DC fields at very low strengthes such as 1 V/mm level and 10–4 Tesla-level. Independence of high-voltage component/element implies a broad application prospect of this phenomenon, especially as an electron source. Targeted designing electrodes enables such a route to yield a practical electron emission source.

摘要 "拉伸 "和 "剪切 "是从固体中去除中性物质的两种基本方法。原则上,从固体中去除带电物质也有类似的对应方法。目前,对电子发射(一种典型的剥夺带电物质)的研究大多集中在 "拉伸 "类型,而很少考虑另一种类型。这项工作的目的是探索另一种剥夺固体带电物质的可能性和可行性。基于量子多体理论,这项研究揭示了从金属表面 "剪切 "电子的可行技术路线。表面电子之间的交换势能显著改变表面二维带的色散关系曲线,进而改变其电子结构。在最高占据态附近的平坦化色散关系曲线能使微小的标量势扰动(eV 级)引起平行表面动量(hbar {{k}_{{||}}} )和动能(KE)(数十 eV 级)的大幅增加。如此高的动能足以保证发射电子超越真空中的势垒,而不是隧穿势垒。即使是强度很低的外部直流电场,如 1 V/mm 级和 10-4 特斯拉级,也能实现这一目标。高压元件/元素的独立性意味着这种现象具有广阔的应用前景,尤其是作为电子源。通过有针对性地设计电极,可以获得实用的电子发射源。
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引用次数: 0
Theoretical Calculation of the Structural, Electronic, and Magnetic Properties of a New Rare-Earth Based Full Heusler Alloys Pr2CoZ (Z = Al, Ga, In) 新型稀土基全 Heusler 合金 Pr2CoZ(Z = Al、Ga、In)的结构、电子和磁性能的理论计算
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-07 DOI: 10.1134/S1063783424600699
S. Rouag, D. Amari

The full potential linearized augmented plane wave (FP-LAPW) method, employing density functional theory (DFT) within the generalized gradient approximation (GGA), is utilized to investigate the structural, electronic and magnetic characteristics of the rare earth element based Pr2CoX (X = Al, Ga, In) full Heusler compounds. The results indicate that, at the equilibrium volume, the Hg2CuTi-type structure is energetically more stable than the Cu2MnAl-type structure for Pr2CoX (X = Al, Ga, In). The electronic band structure of Pr2CoX (X = Al, Ga, In) reveals an indirect band gap with the minority spin, suggesting half-metallic behavior. The calculations of magnetic properties affirm the half-metallic nature of these compounds, with total magnetic moment of 3.99 μB.

摘要 利用广义梯度近似(GGA)中的密度泛函理论(DFT),采用全势线性化增强平面波(FP-LAPW)方法研究了基于稀土元素的 Pr2CoX(X = Al、Ga、In)全 Heusler 化合物的结构、电子和磁性特征。结果表明,在平衡体积下,Pr2CoX(X = Al、Ga、In)的 Hg2CuTi- 型结构比 Cu2MnAl 型结构能量更稳定。Pr2CoX(X = Al、Ga、In)的电子能带结构显示了少数自旋的间接能带隙,表明了半金属行为。磁性计算证实了这些化合物的半金属性质,其总磁矩为 3.99 μB。
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引用次数: 0
Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor 氮化铝缓冲层厚度对 In0.17Al0.83N/GaN 高电子迁移率晶体管电子和电气特性的影响
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-07 DOI: 10.1134/S1063783424600766
Abdelmalek Douara, Abdelaziz Rabehi, Mawloud Guermoui, Rania Daha, Imad Eddine Tibermacine

In this paper, we delved into the intricacies of In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) using a comprehensive simulation model and by Leveraging the capabilities of Nextnano simulation software. We extensively explored how different thicknesses of the AlN buffer layer impact electronic and electrical properties. Our study was centered on scrutinizing the density and mobility of the two-dimensional electron gas (2-DEG) within the In0.17Al0.83N/GaN HEMT structure. Aiming to understand how different AlN buffer layer thicknesses impact device performance. Our findings unveil a crucial relationship between AlN buffer layer thickness and critical performance metrics. Specifically, we observed significant trends in output current and transconductance, shedding light on the direct influence of AlN thickness on device behavior. Our simulations identified an optimal AlN thickness of 350 nm, demonstrating the highest output current and surpassing a transconductance peak of 510 mS/mm. Importantly, our computational predictions closely align with experimental observations, validating the reliability and accuracy of our simulation model. Through this meticulous analysis, we contribute valuable insights that can guide the design and optimization of In0.17Al0.83N/GaN HEMT, paving the way for improved device performance and functionality across various electronic applications. Our study underscores the importance of considering AlN buffer layer thickness in designing and engineering high-performance HEMTs, highlighting avenues for future research and development in semiconductor device technology.

摘要 在本文中,我们利用综合仿真模型和 Nextnano 仿真软件的功能,深入研究了 In0.17Al0.83N/GaN 高电子迁移率晶体管 (HEMT) 的复杂性。我们广泛探讨了不同厚度的 AlN 缓冲层对电子和电气性能的影响。我们的研究重点是仔细观察 In0.17Al0.83N/GaN HEMT 结构中二维电子气体 (2-DEG) 的密度和迁移率。目的是了解不同的 AlN 缓冲层厚度对器件性能的影响。我们的研究结果揭示了氮化铝缓冲层厚度与关键性能指标之间的重要关系。具体来说,我们观察到输出电流和跨导的显著变化趋势,揭示了氮化铝厚度对器件行为的直接影响。我们的模拟确定了 350 nm 的最佳 AlN 厚度,该厚度显示了最高的输出电流,并超过了 510 mS/mm 的跨导峰值。重要的是,我们的计算预测与实验观察结果非常吻合,验证了我们模拟模型的可靠性和准确性。通过这种细致的分析,我们提出了宝贵的见解,可以指导 In0.17Al0.83N/GaN HEMT 的设计和优化,为提高各种电子应用的器件性能和功能铺平道路。我们的研究强调了在设计和制造高性能 HEMT 时考虑 AlN 缓冲层厚度的重要性,为半导体器件技术的未来研究和发展指明了道路。
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引用次数: 0
Microstructural, Morphological, and Magnetic Features of the Triple Perovskite Oxide La3Mn2FeO9 三重包晶氧化物 La3Mn2FeO9 的微结构、形态和磁性特征
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-07 DOI: 10.1134/S1063783424600663
Raghad K. Aljurays, Aicha Loucif

Triple perovskite La3Mn2FeO9 powder was synthesized via the sol gel method. The microstructural, morphological and magnetic features of the prepared perovskite sample were examined by means of X‑ray diffraction (XRD), filed-emission scanning electron microscopy (FE-SEM), and vibrating sample magnetometry (VSM). The XRD pattern was refined using the MAUD software based on the Rietveld program. The results confirmed that the sample crystallized in a trigonal structure, with a crystallite size measuring approximately 257 ± 5 nm and a microstrain of about 0.16%. The FE-SEM image revealed spherical like-particles with an average grain size in the vicinity of 514 nm. The VSM curve revealed that the prepared La3Mn2FeO9 powder exhibited a ferromagnetic behavior, and subsequent fitting using the law of approach to saturation revealed a saturation magnetization of 1.156438 ± 0.00384 emu/g.

摘要 通过溶胶凝胶法合成了三重包晶La3Mn2FeO9粉末。通过 X 射线衍射 (XRD)、锉刀发射扫描电子显微镜 (FE-SEM) 和振动样品磁力计 (VSM) 对制备的透辉石样品的微观结构、形态和磁性特征进行了研究。X 射线衍射图样由基于里特维尔德程序的 MAUD 软件精制而成。结果证实,样品结晶为三方结构,晶粒大小约为 257 ± 5 nm,微应变约为 0.16%。FE-SEM 图像显示出类似球形的颗粒,平均晶粒大小在 514 nm 附近。VSM 曲线显示制备的 La3Mn2FeO9 粉末具有铁磁性,随后使用接近饱和定律进行拟合,发现饱和磁化率为 1.156438 ± 0.00384 emu/g。
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引用次数: 0
Production and Characterization of Zn1 – xFexS Thin Films by Ultrasonic Chemical Spray Deposition Technique 利用超声波化学喷雾沉积技术制备 Zn1 - xFexS 薄膜并确定其特性
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-07 DOI: 10.1134/S1063783424600857
Tuba Solakyildirim, Umit Alver

In this study, Zn1 – xFexS thin films were synthesized using the chemical spray pyrolysis technique at a substrate temperature of 450°C and with varying Fe concentrations. The spraying solution was prepared by combining distilled water with 0.05 M zinc chloride (ZnCl2), 0.05 M iron chloride (FeCl3⋅6H2O), and 0.2 M thiourea ((NH2)2CS). The initial solution was atomized onto heated glass substrates using an ultrasonic nebulizer operating at a frequency of 1.63 MHz and dry air. The morphology of the films was examined by scanning electron microscopy (SEM). The crystal structures were determined by X-ray diffraction analysis (XRD). The optical properties of the films were analyzed using a UV spectrometer. The energy band gap of the films was defined using the absorption spectrum.

摘要 本研究采用化学喷雾热解技术,在 450°C 的基底温度和不同的铁浓度下合成了 Zn1 - xFexS 薄膜。喷射溶液由蒸馏水与 0.05 M 氯化锌 (ZnCl2)、0.05 M 氯化铁 (FeCl3⋅6H2O) 和 0.2 M 硫脲 ((NH2)2CS)混合配制而成。使用频率为 1.63 MHz 的超声雾化器和干燥空气将初始溶液雾化到加热的玻璃基底上。薄膜的形态由扫描电子显微镜(SEM)进行检测。通过 X 射线衍射分析 (XRD) 确定了晶体结构。使用紫外光谱仪分析了薄膜的光学特性。利用吸收光谱确定了薄膜的能带隙。
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引用次数: 0
First-Principles Study of Structural Stability and Tensile Strengths of Light-Element-Doped ZrTi 光元素掺杂锆钛结构稳定性和拉伸强度的第一原理研究
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-07-19 DOI: 10.1134/S106378342460064X
Shouxin Cui, Wenxia Feng, Bao Zhao, Guiqing Zhang, Feng Guo, Zengtao Lv

ZrTi alloys have potential applications in critical parts of spacecraft. As lightweight design is a fundamental requirement for spacecraft, incorporating light elements into ZrTi alloys is a feasible approach. In this paper, we investigated the tensile deformation behavior of ZrTi doped with light element by using the plane-wave pseudopotential density functional method. Covalent Ti–Zr bonds accommodate deformation by softening and breaking at large tensions, and structural stability of ZrTi and ZrTiX (X = B, Al, Ga, and V) is determined by the strength of these Ti–Zr bonds under tension. The results show that the lower doped concentrations of light element decrease the tensile strengths. However, there is no obvious difference in tensile strengths along [11(bar {2})0] direction between ZrTi and ZrTi0.875Al0.125. The results of Mulliken overlap populations indicate that different tensile strengths of ZrTiX should be resulted from different strengths of covalent Ti–Zr bonds. The incorporation of light element dopants does not strengthen all chemical bonds and weakens strengths of covalent Ti–Zr bonds, indicating that experimental strengthening mechanism of ternary ZrTiX alloys could be ascribed to Hall–Petch effect.

摘要锆钛合金具有应用于航天器关键部件的潜力。轻量化设计是航天器的基本要求,因此在锆钛合金中加入轻元素是一种可行的方法。本文采用平面波伪势密度泛函法研究了掺入轻元素的锆钛合金的拉伸变形行为。共价 Ti-Zr 键在大张力下通过软化和断裂来适应变形,ZrTi 和 ZrTiX(X = B、Al、Ga 和 V)的结构稳定性取决于这些 Ti-Zr 键在张力下的强度。结果表明,轻元素掺杂浓度越低,拉伸强度越低。然而,ZrTi 和 ZrTi0.875Al0.125 沿 [11(bar {2})0]方向的拉伸强度没有明显差异。穆利肯重叠群的结果表明,ZrTiX 的不同抗拉强度应该是由 Ti-Zr 共价键的不同强度造成的。轻元素掺杂物的加入并没有强化所有化学键,反而削弱了共价 Ti-Zr 键的强度,这表明三元 ZrTiX 合金的实验强化机制可归因于霍尔-佩奇效应。
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引用次数: 0
Effect of Temperature and Pressure on Low-Frequency Raman Scattering from Strontium Tantalate Ceramic Material 温度和压力对钽酸锶陶瓷材料低频拉曼散射的影响
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-07-19 DOI: 10.1134/S1063783424600559
Jizhen Hui, Anwar Hushur, Amat Hasan, Seiji Kojima, Abliz Mattursun

The temperature and pressure dependences of low-frequency Raman scattering were studied on structural phase transformations of Sr2Ta2O7 ceramics. The Raman spectrum was measured over a temperature range from 0 to –185°C. The temperature dependence of the Raman shift of a low-lying mode of the B1g symmetry shows at T = –110°C. This anomaly of Sr2Ta2O7 is related to a ferroelectric phase transition. During cooling, the peak width of the B1g mode shows a change at 150°C, and the temperature dependence of Raman shifts of B3g, and B1g modes becomes abnormal. Under high pressure, we discovered a phase transition between 4 and 5.5 GPa. Angle-dispersive X-ray diffraction data suggest the phase transition from incommensurate to commensurate states.

摘要 研究了 Sr2Ta2O7 陶瓷结构相变中低频拉曼散射的温度和压力相关性。拉曼光谱是在 0 至 -185°C 的温度范围内测量的。在 T = -110°C 时,B1g 对称的一个低洼模式的拉曼位移与温度有关。Sr2Ta2O7 的这种反常现象与铁电相变有关。在冷却过程中,B1g 模式的峰宽在 150°C 时发生变化,B3g 和 B1g 模式的拉曼位移随温度的变化也变得异常。在高压下,我们发现了 4 至 5.5 GPa 之间的相变。角度色散 X 射线衍射数据表明,相变是从不相称到相称态。
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引用次数: 0
Study of the Effect of Exchange and Correlation Potential on the Electronic Properties of Mercury Chalcogenides 交换电位和相关电位对钙化汞电子特性影响的研究
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-07-19 DOI: 10.1134/S1063783424600730
B. Benabdelkrim, T. Ghaitaoui, B. Amrani, A. E. Ghaitaoui, I. Arbaoui

In this work, we present first-principles DFT calculations to predict the structural and electronic properties of HgX (X = S, Se, and Te) compounds. First-principles methods using the local density approximation (LDA) and generalized gradient approximation (GGA) lead to an underestimation of the band gap energy. The objective of this work is to use various exchange and correlation potentials (LDA, GGA-PBE, EVGGA, MBJGGA, MBJLDA, etc.) to determine the band gap energy and electronic properties. We show that the use of the modified Becke–Johnson (mBJ) approximation leads to very good agreement with the experimental band gap energies for mercury chalcogenides.

摘要 在这项工作中,我们通过第一原理 DFT 计算来预测 HgX(X = S、Se 和 Te)化合物的结构和电子特性。使用局部密度近似(LDA)和广义梯度近似(GGA)的第一性原理方法会导致带隙能被低估。这项工作的目的是利用各种交换和相关电势(LDA、GGA-PBE、EVGGA、MBJGGA、MBJLDA 等)来确定带隙能和电子特性。我们的研究表明,使用改良贝克-约翰逊(mBJ)近似法可以很好地吻合铬化汞的实验带隙能。
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引用次数: 0
Theoretical Study of Symmetrical 1D Photonic Crystal as a Blood Cancer Sensor 对称一维光子晶体作为血癌传感器的理论研究
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-07-19 DOI: 10.1134/S1063783424600602
K. Ben Abdelaziz, O. Soltani, M. Kanzari

In this work, we studied by simulation the performance of a cancer sensor based on 1D symmetrical photonic crystal. The proposal 1D photonic crystal structure is (AB)5C(BA)5 where A = TiO2 with high refractive index, B = SiO2 with low refractive index and layer C is a blood cell. The study was conducted using the Transfer Matrix method (TMM) method. So, the transmissions spectra, the sensitivity as well as the quality factor of the sensor for different blood cell samples including normal blood cells and various cancerous blood cells: Jurkat, HeLa, PC-12, MDA-MB-231, and MCF-7 were obtained. The obtained results have shown the improvement in the performance of the proposal 1D photonic crystal sensors, namely sensitivity and quality factor, as a function of the thickness of the sample layer C and the angle of incidence in case of the two polarization mode.

摘要 在这项工作中,我们通过仿真研究了基于一维对称光子晶体的癌症传感器的性能。提议的一维光子晶体结构为 (AB)5C(BA)5,其中 A = 高折射率的 TiO2,B = 低折射率的 SiO2,C 层为血细胞。研究采用传递矩阵法(TMM)进行。因此,传感器对不同血细胞样本(包括正常血细胞和各种癌血细胞)的透射光谱、灵敏度和品质因数都不同:这些血细胞包括:Jurkat、HeLa、PC-12、MDA-MB-231 和 MCF-7。结果表明,在双偏振模式下,随着样品层 C 厚度和入射角度的变化,所提出的一维光子晶体传感器的灵敏度和品质因数的性能都有所提高。
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引用次数: 0
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Physics of the Solid State
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