Experimental results of the combination of transverse mode selection and active mode-locking with anti-reflection-coated broad area lasers (BALs) are presented. The BALs are subject to feedback from a free-space external Fourier-optical 4-setup with a reflective spatial frequency filter in the Fourier-plane for transverse mode selection. Driving the BALs with a high frequency modulated pump current above threshold active longitudinal mode-locking is achieved. Pulse durations as low as 88 ps are obtained, while the Gaussian-like fundamental or a higher order transverse mode up to mode number 5 is selected on purpose. Pulse duration and shape are nearly independent of the selected transverse mode.
{"title":"Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers","authors":"Christoph Doering, H. Fouckhardt","doi":"10.1155/2014/293590","DOIUrl":"https://doi.org/10.1155/2014/293590","url":null,"abstract":"Experimental results of the combination of transverse mode selection and active mode-locking with anti-reflection-coated broad area lasers (BALs) are presented. The BALs are subject to feedback from a free-space external Fourier-optical 4-setup with a reflective spatial frequency filter in the Fourier-plane for transverse mode selection. Driving the BALs with a high frequency modulated pump current above threshold active longitudinal mode-locking is achieved. Pulse durations as low as 88 ps are obtained, while the Gaussian-like fundamental or a higher order transverse mode up to mode number 5 is selected on purpose. Pulse duration and shape are nearly independent of the selected transverse mode.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2014 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2014-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2014/293590","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64427615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Medium-range inductive wireless power transmission systems allow a sufficient power transfer without requiring close proximity between a primary coil and a secondary coil. We briefly investigate the range of a typical system and its radiated emission, from the perspectives of electromagnetic compatibility (EMC) and human exposure requirements. We then discuss the applicable legislation in the European Union, the main question being the applicability of the R&TTE or radio equipment directives. Our conclusion is that this applicability depends on multiple parameters, among which is the presence of a self-tuning capability or of a transmitter control based on telemetry.
{"title":"The European Legislation Applicable to Medium-Range Inductive Wireless Power Transmission Systems","authors":"F. Broydé, E. Clavelier, Lucie Broyde","doi":"10.1155/2014/820398","DOIUrl":"https://doi.org/10.1155/2014/820398","url":null,"abstract":"Medium-range inductive wireless power transmission systems allow a sufficient power transfer without requiring close proximity between a primary coil and a secondary coil. We briefly investigate the range of a typical system and its radiated emission, from the perspectives of electromagnetic compatibility (EMC) and human exposure requirements. We then discuss the applicable legislation in the European Union, the main question being the applicability of the R&TTE or radio equipment directives. Our conclusion is that this applicability depends on multiple parameters, among which is the presence of a self-tuning capability or of a transmitter control based on telemetry.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2014 1","pages":"1-10"},"PeriodicalIF":0.0,"publicationDate":"2014-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2014/820398","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64690378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have analyzed the impact of digital and optical signal processing algorithms, that is, Volterra equalization (VE), digital backpropagation (BP), and optical phase conjugation with nonlinearity module (OPC-NM), in next generation 10 Gbit/s (also referred to as XG) DP-QPSK long haul WDM (fixed-grid) passive optical network (PON) without midspan repeaters over 120 km standard single mode fiber (SMF) link for downstream signals. Due to the compensation of optical Kerr effects, the sensitivity penalty is improved by 2 dB by implementing BP algorithm, 1.5 dB by VE algorithm, and 2.69 dB by OPC-NM. Moreover, with the implementation of NL equalization technique, we are able to get the transmission distance of 126.6 km SMF for the 1 : 1024 split ratio at 5 GHz channel spacing in the nonlinear region.
{"title":"Signal processing algorithms for down-stream traffic in next generation 10 Gbit/s fixed-grid passive optical networks","authors":"R. Asif, Rabeea Basir, Ramshah Ahmad","doi":"10.1155/2014/296781","DOIUrl":"https://doi.org/10.1155/2014/296781","url":null,"abstract":"We have analyzed the impact of digital and optical signal processing algorithms, that is, Volterra equalization (VE), digital backpropagation (BP), and optical phase conjugation with nonlinearity module (OPC-NM), in next generation 10 Gbit/s (also referred to as XG) DP-QPSK long haul WDM (fixed-grid) passive optical network (PON) without midspan repeaters over 120 km standard single mode fiber (SMF) link for downstream signals. Due to the compensation of optical Kerr effects, the sensitivity penalty is improved by 2 dB by implementing BP algorithm, 1.5 dB by VE algorithm, and 2.69 dB by OPC-NM. Moreover, with the implementation of NL equalization technique, we are able to get the transmission distance of 126.6 km SMF for the 1 : 1024 split ratio at 5 GHz channel spacing in the nonlinear region.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2014 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2014/296781","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64428968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We propose and design a spiral photonic crystal fiber with elliptical air holes for achieving high birefringence, large nonlinearity, and negative dispersion. The structure is designed using chalcogenide glass (As2S3) for different ellipticity ratios of air holes in the cladding and the effect on various properties is observed. The proposed structure has birefringence of the order 10−2, nonlinearity of 26739.42 W−1 m−1, and dispersion of −1136.69 at 0.85 μm. An accurate numerical approach based on finite element method is used for the design and simulation of the structure. Due to high birefringence and negative dispersion, the proposed structure can be used for polarization control and dispersion compensation, respectively.
{"title":"Highly Nonlinear and Birefringent Spiral Photonic Crystal Fiber","authors":"S. Revathi, S. R. Inbathini, Rizwan Ali Saifudeen","doi":"10.1155/2014/464391","DOIUrl":"https://doi.org/10.1155/2014/464391","url":null,"abstract":"We propose and design a spiral photonic crystal fiber with elliptical air holes for achieving high birefringence, large nonlinearity, and negative dispersion. The structure is designed using chalcogenide glass (As2S3) for different ellipticity ratios of air holes in the cladding and the effect on various properties is observed. The proposed structure has birefringence of the order 10−2, nonlinearity of 26739.42 W−1 m−1, and dispersion of −1136.69 at 0.85 μm. An accurate numerical approach based on finite element method is used for the design and simulation of the structure. Due to high birefringence and negative dispersion, the proposed structure can be used for polarization control and dispersion compensation, respectively.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"77 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2014-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2014/464391","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64502430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Implantable medical devices provide therapy to treat numerous health conditions as well as monitoring and diagnosis. Over the years, the development of these devices has seen remarkable progress thanks to tremendous advances in microelectronics, electrode technology, packaging and signal processing techniques. Many of today’s implantable devices use wireless technology to supply power and provide communication. There are many challenges when creating an implantable device. Issues such as reliable and fast bidirectional data communication, efficient power delivery to the implantable circuits, low noise and low power for the recording part of the system, and delivery of safe stimulation to avoid tissue and electrode damage are some of the challenges faced by the microelectronics circuit designer. This paper provides a review of advances in microelectronics over the last decade or so for implantable medical devices and systems. The focus is on neural recording and stimulation circuits suitable for fabrication in modern silicon process technologies and biotelemetry methods for power and data transfer, with particular emphasis on methods employing radio frequency inductive coupling. The paper concludes by highlighting some of the issues that will drive future research in the field.
{"title":"Advances in Microelectronics for Implantable Medical Devices","authors":"A. Demosthenous","doi":"10.1155/2014/981295","DOIUrl":"https://doi.org/10.1155/2014/981295","url":null,"abstract":"Implantable medical devices provide therapy to treat numerous health conditions as well as monitoring and diagnosis. Over the years, the development of these devices has seen remarkable progress thanks to tremendous advances in microelectronics, electrode technology, packaging and signal processing techniques. Many of today’s implantable devices use wireless technology to supply power and provide communication. There are many challenges when creating an implantable device. Issues such as reliable and fast bidirectional data communication, efficient power delivery to the implantable circuits, low noise and low power for the recording part of the system, and delivery of safe stimulation to avoid tissue and electrode damage are some of the challenges faced by the microelectronics circuit designer. This paper provides a review of advances in microelectronics over the last decade or so for implantable medical devices and systems. The focus is on neural recording and stimulation circuits suitable for fabrication in modern silicon process technologies and biotelemetry methods for power and data transfer, with particular emphasis on methods employing radio frequency inductive coupling. The paper concludes by highlighting some of the issues that will drive future research in the field.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2014 1","pages":"1-21"},"PeriodicalIF":0.0,"publicationDate":"2014-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2014/981295","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64778464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
InAs/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. Numerous theoretically predicted advantages that T2SL offers over present-day detection technologies, heterojunction engineering capabilities, and technological preferences make T2SL technology promising candidate for the realization of high performance IR imagers. Despite concentrated efforts of many research groups, the T2SLs have not revealed full potential yet. This paper attempts to provide a comprehensive review of the current status of T2SL detectors and discusses origins of T2SL device performance degradation, in particular, surface and bulk dark-current components. Various approaches of dark current reduction with their pros and cons are presented.
{"title":"InAs/GaSb Type-II Superlattice Detectors","authors":"E. Plis","doi":"10.1155/2014/246769","DOIUrl":"https://doi.org/10.1155/2014/246769","url":null,"abstract":"InAs/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. Numerous theoretically predicted advantages that T2SL offers over present-day detection technologies, heterojunction engineering capabilities, and technological preferences make T2SL technology promising candidate for the realization of high performance IR imagers. Despite concentrated efforts of many research groups, the T2SLs have not revealed full potential yet. This paper attempts to provide a comprehensive review of the current status of T2SL detectors and discusses origins of T2SL device performance degradation, in particular, surface and bulk dark-current components. Various approaches of dark current reduction with their pros and cons are presented.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2014 1","pages":"1-12"},"PeriodicalIF":0.0,"publicationDate":"2014-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2014/246769","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64402845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Highly ordered mesoporous TiO2 modified by CdS, CdSe, and ZnS quantum dots (QDs) was fabricated by successive ionic layer adsorption and reaction (SILAR) method. The quantity of material deposition seems to be affected not only by the employed deposition method but also and mainly by the nature of the underlying layer. The CdS, CdSe, and ZnS QDs modification expands the photoresponse range of mesoporous TiO2 from ultraviolet region to visible range, as confirmed by UV-Vis spectrum. Optimized anode electrodes led to solar cells producing high current densities. Pt, CuS, PbS, and Cu2S have been used as electrocatalysts on counter electrodes. The maximum solar conversion efficiency reached in this work was 1.52% and was obtained by using Pt electrocatalyst. CuS, PbS, and Cu2S gave high currents and this was in line with the low charge transfer resistances recorded in their case.
{"title":"The CdS/CdSe/ZnS Photoanode Cosensitized Solar Cells Basedon Pt, CuS, Cu2S, and PbS Counter Electrodes","authors":"T. Thanh, D. Thanh, V. Lam","doi":"10.1155/2014/397681","DOIUrl":"https://doi.org/10.1155/2014/397681","url":null,"abstract":"Highly ordered mesoporous TiO2 modified by CdS, CdSe, and ZnS quantum dots (QDs) was fabricated by successive ionic layer adsorption and reaction (SILAR) method. The quantity of material deposition seems to be affected not only by the employed deposition method but also and mainly by the nature of the underlying layer. The CdS, CdSe, and ZnS QDs modification expands the photoresponse range of mesoporous TiO2 from ultraviolet region to visible range, as confirmed by UV-Vis spectrum. Optimized anode electrodes led to solar cells producing high current densities. Pt, CuS, PbS, and Cu2S have been used as electrocatalysts on counter electrodes. The maximum solar conversion efficiency reached in this work was 1.52% and was obtained by using Pt electrocatalyst. CuS, PbS, and Cu2S gave high currents and this was in line with the low charge transfer resistances recorded in their case.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2014 1","pages":"1-9"},"PeriodicalIF":0.0,"publicationDate":"2014-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2014/397681","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64479311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Troia, F. Leonardis, Mauro Lanzafame, T. Muciaccia, G. Grasso, Giovanni Giannoccaro, C. E. Campanella, V. Passaro
We review polarization splitting and rotating photonic devices based on silicon-on-insulator technology platform, focusing on their performance and design criteria. In addition, we present a theoretical investigation and optimization of some rotator and splitter architectures to be employed for polarization diversity circuits. In this context, fabrication tolerances and their influences on device performance are theoretically estimated by rigorous simulations too.
{"title":"Design and Optimization of Polarization Splitting and Rotating Devices in Silicon-on-Insulator Technology","authors":"B. Troia, F. Leonardis, Mauro Lanzafame, T. Muciaccia, G. Grasso, Giovanni Giannoccaro, C. E. Campanella, V. Passaro","doi":"10.1155/2014/490405","DOIUrl":"https://doi.org/10.1155/2014/490405","url":null,"abstract":"We review polarization splitting and rotating photonic devices based on silicon-on-insulator technology platform, focusing on their performance and design criteria. In addition, we present a theoretical investigation and optimization of some rotator and splitter architectures to be employed for polarization diversity circuits. In this context, fabrication tolerances and their influences on device performance are theoretically estimated by rigorous simulations too.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2014 1","pages":"1-16"},"PeriodicalIF":0.0,"publicationDate":"2014-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2014/490405","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64518842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Effective and economical burn-in screening is important for technology development and manufacture of semiconductor lasers. We study the burn-in degradation behavior of wavelength-division multiplexing semiconductor lasers to determine the feasibility of short burn-in. The burn-in is characterized by the sublinear model and correlated with long-term reliability.
{"title":"Burn-In Aging Behavior and Analytical Modeling of Wavelength-Division Multiplexing Semiconductor Lasers: Is the Swift Burn-In Feasible for Long-Term Reliability Assurance?","authors":"Jia-Sheng Huang","doi":"10.1155/2013/568945","DOIUrl":"https://doi.org/10.1155/2013/568945","url":null,"abstract":"Effective and economical burn-in screening is important for technology development and manufacture of semiconductor lasers. We study the burn-in degradation behavior of wavelength-division multiplexing semiconductor lasers to determine the feasibility of short burn-in. The burn-in is characterized by the sublinear model and correlated with long-term reliability.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2013-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/568945","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64158198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A detailed numerical study of subwavelength nanogratings behavior to enhance the light absorption characteristics in plasmonic-based metal-semiconductor-metal photodetectors (MSM-PDs) is performed by implementation of 2D finite-difference time-domain (FDTD) algorithm. Due to the structure design and changes in the device physical parameters, various devices with different geometries are simulated and compared. Parameters like nano-grating height and duty cycle (DC) are optimized for rectangular and taper subwavelength metal nanogratings on GaAs substrate and their impact on light absorption below the diffraction limits are confirmed. The calculated light enhancement is ~32.7-times for an optimized device in comparison with a conventional MSM-PD. This enhancement is attributed to the plasmonic effects in the near-field region.
{"title":"A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity","authors":"N. Das, F. F. Masouleh, H. Mashayekhi","doi":"10.1155/2013/793253","DOIUrl":"https://doi.org/10.1155/2013/793253","url":null,"abstract":"A detailed numerical study of subwavelength nanogratings behavior to enhance the light absorption characteristics in plasmonic-based metal-semiconductor-metal photodetectors (MSM-PDs) is performed by implementation of 2D finite-difference time-domain (FDTD) algorithm. Due to the structure design and changes in the device physical parameters, various devices with different geometries are simulated and compared. Parameters like nano-grating height and duty cycle (DC) are optimized for rectangular and taper subwavelength metal nanogratings on GaAs substrate and their impact on light absorption below the diffraction limits are confirmed. The calculated light enhancement is ~32.7-times for an optimized device in comparison with a conventional MSM-PD. This enhancement is attributed to the plasmonic effects in the near-field region.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-10"},"PeriodicalIF":0.0,"publicationDate":"2013-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/793253","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64255962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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