A novel electronically tunable optical delay line based on InGaAs quantum well microresonators is proposed for high frequency RF transmission. The device utilizes the charge-controlled blue shift of the absorption edge in InGaAs quantum wells to change the effective refractive indices of the resonators and couplers, therefore, provides an efficient way to produce variable time delay. A theoretical model based on measurements is used to analyze the device performance. Simulation results for five 3 × 27 μm2 cascaded resonators with bias voltages <0.7 V show a continuous tuning range of 7~68 ps, a ripple delay <1.5 ps, and a useable bandwidth of 39.3 GHz.
{"title":"Electronically Tunable Wide Band Optical Delay Line Based on InGaAs Quantum Well Microresonators","authors":"Yan Zhang, G. Taylor","doi":"10.1155/2013/930369","DOIUrl":"https://doi.org/10.1155/2013/930369","url":null,"abstract":"A novel electronically tunable optical delay line based on InGaAs quantum well microresonators is proposed for high frequency RF transmission. The device utilizes the charge-controlled blue shift of the absorption edge in InGaAs quantum wells to change the effective refractive indices of the resonators and couplers, therefore, provides an efficient way to produce variable time delay. A theoretical model based on measurements is used to analyze the device performance. Simulation results for five 3 × 27 μm2 cascaded resonators with bias voltages <0.7 V show a continuous tuning range of 7~68 ps, a ripple delay <1.5 ps, and a useable bandwidth of 39.3 GHz.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2013-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/930369","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64320023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pupil phase diversity (PPD) wavefront sensor is a new kind of phase-visualization methods, and the output signal of PPD represents the input pupil phase and shows a 1-1 mapping between the position of the wavefront error in the pupil and its position in the output signal. High-precisely wavefront measuring can be obtained under no noise by using appropriate phase restoration algorithm while performance of PPD under noise is unknown. We analyzed antinoise performance of PPD based on genetic algorithm (GA) through measuring the distorted wavefront under different noise level. Simulation results show that wavefront measuring is almost not affected by the existence of noise, which indicates that PPD based on GA can be used in applications with noise.
{"title":"Initial Antinoise Performance Analysis of Pupil Phase Diversity Based on Genetic Algorithm","authors":"Huizhen Yang, Yaoqiu Li","doi":"10.1155/2013/721420","DOIUrl":"https://doi.org/10.1155/2013/721420","url":null,"abstract":"Pupil phase diversity (PPD) wavefront sensor is a new kind of phase-visualization methods, and the output signal of PPD represents the input pupil phase and shows a 1-1 mapping between the position of the wavefront error in the pupil and its position in the output signal. High-precisely wavefront measuring can be obtained under no noise by using appropriate phase restoration algorithm while performance of PPD under noise is unknown. We analyzed antinoise performance of PPD based on genetic algorithm (GA) through measuring the distorted wavefront under different noise level. Simulation results show that wavefront measuring is almost not affected by the existence of noise, which indicates that PPD based on GA can be used in applications with noise.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2013-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/721420","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64224192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. F. Qasrawi, Salam M. Kmail, Samah F. Assaf, Z. M. Saleh
Hydrogenated nanocrystalline Silicon thin films prepared by the very high frequency chemical vapor deposition technique (VHF-CVD) on stainless steel (SST) substrates are used to design Schottky point contact barriers for the purpose of solar energy conversion and passive electronic component applications. In this process, the contact performance between SST and M (M = Ag, Au, and Ni) and between Ag, Au, and Ni electrodes was characterized by means of current-voltage, capacitance-voltage, and light intensity dependence of short circuit ( ) current and open circuit voltage ( ) of the contacts. Particularly, the devices ideality factors, barrier heights were evaluated by the Schottky method and compared to the Cheung's. Best Schottky device performance with lowest ideality factor suitable for electronic applications was observed in the SST/nc-Si:H/Ag structure. This device reflects a of 229 mV with an of 1.6 mA/cm2 under an illumination intensity of ~40 klux. On the other hand, the highest being 9.0 mA/cm2 and the of 53.1 mV were observed for Ni/nc-Si:H/Au structure. As these voltages represent the maximum biasing voltage for some of the designed devices, the SST/nc-Si:H/M and M/nc-Si:H/M can be regarded as multifunctional self-energy that provided electronic devices suitable for active or passive applications.
{"title":"Design and Investigation of SST/nc-Si:H/M (M = Ag, Au, Ni) and M/nc-Si:H/M Multifunctional Devices","authors":"A. F. Qasrawi, Salam M. Kmail, Samah F. Assaf, Z. M. Saleh","doi":"10.1155/2013/807542","DOIUrl":"https://doi.org/10.1155/2013/807542","url":null,"abstract":"Hydrogenated nanocrystalline Silicon thin films prepared by the very high frequency chemical vapor deposition technique (VHF-CVD) on stainless steel (SST) substrates are used to design Schottky point contact barriers for the purpose of solar energy conversion and passive electronic component applications. In this process, the contact performance between SST and M (M = Ag, Au, and Ni) and between Ag, Au, and Ni electrodes was characterized by means of current-voltage, capacitance-voltage, and light intensity dependence of short circuit ( <path id=\"x73\" d=\"M319 325l-25 -7q-33 99 -103 99q-29 0 -47 -19.5t-18 -49.5t22 -49.5t62 -36.5q63 -26 95 -57t32 -79q0 -64 -50 -101t-115 -37q-35 0 -67.5 10.5t-46.5 23.5q-5 11 -11 51t-6 67l27 5q14 -53 46.5 -88.5t75.5 -35.5q29 0 50 19.5t21 50.5t-19.5 51.5t-59.5 39.5\u0000q-28 12 -46 22.5t-38.5 27t-30.5 38.5t-10 49q0 54 42.5 92t109.5 38q48 0 88 -18q6 -15 13 -50.5t9 -55.5z\" /> <path id=\"x63\" d=\"M390 111l17 -21q-34 -45 -80 -73.5t-89 -28.5q-91 0 -146 62t-55 147q0 118 101 195q74 57 149 57h1q59 0 90 -27q16 -14 16 -30q0 -15 -12 -29t-21 -14q-8 0 -19 11q-44 41 -101 41q-52 0 -87.5 -42.5t-35.5 -117.5q0 -49 15 -87t39 -58t49 -30t48 -10q33 0 60.5 12\u0000t60.5 43z\" /> ) current and open circuit voltage ( ) of the contacts. Particularly, the devices ideality factors, barrier heights were evaluated by the Schottky method and compared to the Cheung's. Best Schottky device performance with lowest ideality factor suitable for electronic applications was observed in the SST/nc-Si:H/Ag structure. This device reflects a of 229 mV with an of 1.6 mA/cm2 under an illumination intensity of ~40 klux. On the other hand, the highest being 9.0 mA/cm2 and the of 53.1 mV were observed for Ni/nc-Si:H/Au structure. As these voltages represent the maximum biasing voltage for some of the designed devices, the SST/nc-Si:H/M and M/nc-Si:H/M can be regarded as multifunctional self-energy that provided electronic devices suitable for active or passive applications.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2013-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/807542","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64262378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Design and characteristics of multiband negative permittivity metamaterial and its absorber configuration are presented in this paper. The proposed multiband metamaterial is composed of a novel multibranch resonator which can possess four electric resonance frequencies. It is shown that, by controlling the length of the main branches of such resonator, the resonant frequencies and corresponding absorbing bands of metamaterial absorber can be shifted in a large frequency band.
{"title":"Multiband Negative Permittivity Metamaterials and Absorbers","authors":"Yiran Tian, G. Wen, Yongjun Huang","doi":"10.1155/2013/269170","DOIUrl":"https://doi.org/10.1155/2013/269170","url":null,"abstract":"Design and characteristics of multiband negative permittivity metamaterial and its absorber configuration are presented in this paper. The proposed multiband metamaterial is composed of a novel multibranch resonator which can possess four electric resonance frequencies. It is shown that, by controlling the length of the main branches of such resonator, the resonant frequencies and corresponding absorbing bands of metamaterial absorber can be shifted in a large frequency band.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2013-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/269170","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64398042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Niazi, Xiaoguang Zhang, Lixia Xi, Abid Munir, Muhammad Idrees, Yousaf Khan
International Telecommunication Union (ITU) has recently standardized ultrahigh definition television (UHD-TV) with a resolution 16 times more than the current high definition TV. An increase in the efficiency of video source coding or in the capacity of transmission channels will be needed to deliver such programs by passive optical network (PON). In this paper, a high capacity integrated PON infrastructure is proposed to overlay ultrahigh definition television by a complete passive coexistence of 10G-PON (XG-PON) and single carrier directly modulated, duo-binary 40G-PON (XLG-PON) signal. The simulation results show error-free transmission performance and further distribution to 32 optical network units (ONUs) on broadcast basis with negligible power penalty over 20 km of bidirectional standard single mode fiber.
{"title":"A Viable Passive Optical Network Design for Ultrahigh Definition TV Distribution","authors":"S. Niazi, Xiaoguang Zhang, Lixia Xi, Abid Munir, Muhammad Idrees, Yousaf Khan","doi":"10.1155/2013/219271","DOIUrl":"https://doi.org/10.1155/2013/219271","url":null,"abstract":"International Telecommunication Union (ITU) has recently standardized ultrahigh definition television (UHD-TV) with a resolution 16 times more than the current high definition TV. An increase in the efficiency of video source coding or in the capacity of transmission channels will be needed to deliver such programs by passive optical network (PON). In this paper, a high capacity integrated PON infrastructure is proposed to overlay ultrahigh definition television by a complete passive coexistence of 10G-PON (XG-PON) and single carrier directly modulated, duo-binary 40G-PON (XLG-PON) signal. The simulation results show error-free transmission performance and further distribution to 32 optical network units (ONUs) on broadcast basis with negligible power penalty over 20 km of bidirectional standard single mode fiber.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2013-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/219271","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64393234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In order to increase the species of organic semiconductors, new Zn-phthalocyanines-based organic materials were synthesized and characterized. The new compounds have been characterized by 1H and 13C using NMR, FTIR, and UV-Vis. The absorption, fluorescence, and electrochemical properties were also studied. Green photoluminescence was observed in dilute solutions. In solid thin films, π-π* interactions influenced the optical properties, and redshifted photoluminescence spectra were obtained; red emissions for ZnPAL (647 nm) and ZnPTr (655 nm) were found. By cyclic voltammetry, the electrochemical band gap was estimated to be 1.94 and 1.17 eV for ZnPAl and ZnPTr, respectively. Single-layer diode devices of an indium tin oxide/Zn-phthalocyanine/aluminum configuration were fabricated and showed relatively low turn-on voltages (3.3 V for ZnPAl and 3 V for ZnPTr).
{"title":"Preparation of Organic Zn-Phthalocyanine-Based Semiconducting Materials and Their Optical and Electrochemical Characterization","authors":"Amira K. Hajri, S. Touaiti, B. Jamoussi","doi":"10.1155/2013/321563","DOIUrl":"https://doi.org/10.1155/2013/321563","url":null,"abstract":"In order to increase the species of organic semiconductors, new Zn-phthalocyanines-based organic materials were synthesized and characterized. The new compounds have been characterized by 1H and 13C using NMR, FTIR, and UV-Vis. The absorption, fluorescence, and electrochemical properties were also studied. Green photoluminescence was observed in dilute solutions. In solid thin films, π-π* interactions influenced the optical properties, and redshifted photoluminescence spectra were obtained; red emissions for ZnPAL (647 nm) and ZnPTr (655 nm) were found. By cyclic voltammetry, the electrochemical band gap was estimated to be 1.94 and 1.17 eV for ZnPAl and ZnPTr, respectively. Single-layer diode devices of an indium tin oxide/Zn-phthalocyanine/aluminum configuration were fabricated and showed relatively low turn-on voltages (3.3 V for ZnPAl and 3 V for ZnPTr).","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2013-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/321563","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64406091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This investigation addresses the structural, optical, and electrical properties of germanium incorporated cadmium oxide (CdO : Ge) thin films. The focus was on the improvement in carrier mobility to achieve high transparency for near-infrared light and low resistivity at the same time. The properties were studied using X-ray diffraction, SEM, spectral photometry, and Hall measurements. All CdO : Ge films were polycrystalline with high texture orientation along [111] direction. It was observed that it is possible to control the carrier concentration () and mobility () with Ge-incorporation level. The mobility could be improved to a highest value of cm2/V·s with Ge doping of 0.25 wt% while maintaining the electrical resistivity as low as Ω·cm and good transparency % in the NIR spectral region. The results of the present work proved to select Ge as dopant to achieve high carrier mobility with low resistivity for application in transparent conducting oxide (TCO) field. Generally, the properties found make CdO : Ge films particularly interesting for the application in optoelectronic devices like thin-film solar cells.
{"title":"Germanium Doping to Improve Carrier Mobility in CdO Films","authors":"A. Dakhel","doi":"10.1155/2013/804646","DOIUrl":"https://doi.org/10.1155/2013/804646","url":null,"abstract":"This investigation addresses the structural, optical, and electrical properties of germanium incorporated cadmium oxide (CdO : Ge) thin films. The focus was on the improvement in carrier mobility to achieve high transparency for near-infrared light and low resistivity at the same time. The properties were studied using X-ray diffraction, SEM, spectral photometry, and Hall measurements. All CdO : Ge films were polycrystalline with high texture orientation along [111] direction. It was observed that it is possible to control the carrier concentration () and mobility () with Ge-incorporation level. The mobility could be improved to a highest value of cm2/V·s with Ge doping of 0.25 wt% while maintaining the electrical resistivity as low as Ω·cm and good transparency % in the NIR spectral region. The results of the present work proved to select Ge as dopant to achieve high carrier mobility with low resistivity for application in transparent conducting oxide (TCO) field. Generally, the properties found make CdO : Ge films particularly interesting for the application in optoelectronic devices like thin-film solar cells.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2013-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/804646","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64260612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The authors have made an attempt to investigate the effect of electron versus hole photocurrent on the optoelectric properties of structured Wurtzite-GaN (Wz-GaN) reach-through avalanche photodiodes (RAPDs). The photo responsivity and optical gain of the devices are obtained within the wavelength range of 300 to 450 nm using a novel modeling and simulation technique developed by the authors. Two optical illumination configurations of the device such as Top Mounted (TM) and Flip Chip (FC) are considered for the present study to investigate the optoelectric performance of the device separately due to electron dominated and hole dominated photocurrents, respectively, in the visible-blind ultraviolet (UV) spectrum. The results show that the peak unity gain responsivity and corresponding optical gain of the device are 555.78 mA W−1 and , respectively, due to hole dominated photocurrent (i.e., in FC structure); while those are 480.56 mA W−1 and , respectively, due to electron dominated photocurrent (i.e., in TM structure) at the wavelength of 365 nm and for applied reverse bias of 85 V. Thus, better optoelectric performance of Wz-GaN RAPDs can be achieved when the photocurrent is made hole dominated by allowing the UV light to be shined on the -layer instead of -layer of the device.
作者尝试研究了电子-空穴光电流对结构纤锌矿- gan (Wz-GaN)通达雪崩光电二极管(rapd)光电性能的影响。利用作者开发的一种新颖的建模和仿真技术，在300 ~ 450 nm波长范围内获得了器件的光响应率和光增益。本研究考虑了器件的两种光学照明结构，即Top Mounted (TM)和Flip Chip (FC)，分别研究了器件在可见-盲紫外(UV)光谱中电子主导和空穴主导光电流下的光电性能。结果表明，由于空穴主导光电流(即FC结构)，器件的峰值单位增益响应率和相应的光学增益分别为555.78 mA W−1和;而在365nm波长下的电子主导光电流(即TM结构)和85v的反向偏压分别为480.56 mA W−1和。因此，当允许紫外光照射在器件的-层上而不是-层上，使光电流占主导时，可以获得更好的Wz-GaN rapd的光电性能。
{"title":"The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of Wz-GaN Reach-Through Avalanche Photodiodes","authors":"M. Ghosh, Mangolika Mondal, A. Acharyya","doi":"10.1155/2013/840931","DOIUrl":"https://doi.org/10.1155/2013/840931","url":null,"abstract":"The authors have made an attempt to investigate the effect of electron versus hole photocurrent on the optoelectric properties of structured Wurtzite-GaN (Wz-GaN) reach-through avalanche photodiodes (RAPDs). The photo responsivity and optical gain of the devices are obtained within the wavelength range of 300 to 450 nm using a novel modeling and simulation technique developed by the authors. Two optical illumination configurations of the device such as Top Mounted (TM) and Flip Chip (FC) are considered for the present study to investigate the optoelectric performance of the device separately due to electron dominated and hole dominated photocurrents, respectively, in the visible-blind ultraviolet (UV) spectrum. The results show that the peak unity gain responsivity and corresponding optical gain of the device are 555.78 mA W−1 and , respectively, due to hole dominated photocurrent (i.e., in FC structure); while those are 480.56 mA W−1 and , respectively, due to electron dominated photocurrent (i.e., in TM structure) at the wavelength of 365 nm and for applied reverse bias of 85 V. Thus, better optoelectric performance of Wz-GaN RAPDs can be achieved when the photocurrent is made hole dominated by allowing the UV light to be shined on the -layer instead of -layer of the device.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-12"},"PeriodicalIF":0.0,"publicationDate":"2013-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/840931","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64282381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Alipour-Banaei, F. Mehdizadeh, Mahdi Hassangholizadeh-Kashtiban
Design and characterization of optical filters based on photonic crystal Thue-Morse structures are theoretically examined using transfer matrix method. It is shown that by introducing defect layer in the original structure of the proposed filter, main characteristics of it are changed. The main advantage of this defect in Thue-Morse structure is its capability for DWDM communication applications. In other words, achievement of DWDM filter through the Thue-Morse photonic crystal structure is much easier. The desired wavelengths can be achieved by changing the defect parameter. High efficiency of the proposed filter is one of its benefits. The transmission efficiency of this structure is about 96% and the quality factor is more than 77000.
{"title":"Important Effect of Defect Parameters on the Characteristics of Thue-Morse Photonic Crystal Filters","authors":"H. Alipour-Banaei, F. Mehdizadeh, Mahdi Hassangholizadeh-Kashtiban","doi":"10.1155/2013/856148","DOIUrl":"https://doi.org/10.1155/2013/856148","url":null,"abstract":"Design and characterization of optical filters based on photonic crystal Thue-Morse structures are theoretically examined using transfer matrix method. It is shown that by introducing defect layer in the original structure of the proposed filter, main characteristics of it are changed. The main advantage of this defect in Thue-Morse structure is its capability for DWDM communication applications. In other words, achievement of DWDM filter through the Thue-Morse photonic crystal structure is much easier. The desired wavelengths can be achieved by changing the defect parameter. High efficiency of the proposed filter is one of its benefits. The transmission efficiency of this structure is about 96% and the quality factor is more than 77000.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"55 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/856148","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64289493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A simple and accurate dynamic model for QD-SOAs is proposed. The proposed model is based on the state space theory, where by eliminating the distance dependence of the rate equation model of the QD-SOA; we derive a state space model for the device. A comparison is made between the rate equation model and the state space model under both steady state and transient regimes. Simulation results demonstrate that the derived state space model not only is much simpler and faster than the rate equation model, but also it is as accurate as the rate equation model.
{"title":"Quantum-Dot Semiconductor Optical Amplifiers: State Space Model versus Rate Equation Model","authors":"H. Taleb, K. Abedi, S. Golmohammadi","doi":"10.1155/2013/831852","DOIUrl":"https://doi.org/10.1155/2013/831852","url":null,"abstract":"A simple and accurate dynamic model for QD-SOAs is proposed. The proposed model is based on the state space theory, where by eliminating the distance dependence of the rate equation model of the QD-SOA; we derive a state space model for the device. A comparison is made between the rate equation model and the state space model under both steady state and transient regimes. Simulation results demonstrate that the derived state space model not only is much simpler and faster than the rate equation model, but also it is as accurate as the rate equation model.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2013 1","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2013-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2013/831852","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64276136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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