Near-field optical trapping of objects using plasmonic antenna structures has recently attracted great attention. However, metal nanostructures also provide a compact platform for general wavefront engineering of intermediate and far-field beams. Here, we analyze optical forces generated by plasmonic beam shaping antenna structures and show that they can be used for general optical manipulation such as guiding of a dielectric particle along a linear or curved trajectory. This removes the need for bulky diffractive optical components and facilitates the integration of optical force manipulation into a highly functional, compact system.
{"title":"Optical Manipulation with Plasmonic Beam Shaping Antenna Structures","authors":"Y. Jun, I. Brener","doi":"10.1155/2012/595646","DOIUrl":"https://doi.org/10.1155/2012/595646","url":null,"abstract":"Near-field optical trapping of objects using plasmonic antenna structures has recently attracted great attention. However, metal nanostructures also provide a compact platform for general wavefront engineering of intermediate and far-field beams. Here, we analyze optical forces generated by plasmonic beam shaping antenna structures and show that they can be used for general optical manipulation such as guiding of a dielectric particle along a linear or curved trajectory. This removes the need for bulky diffractive optical components and facilitates the integration of optical force manipulation into a highly functional, compact system.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2012 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2012-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2012/595646","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64335418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Most metamaterials exhibit pronounced anisotropic properties that are crucial for the understanding of their superior optical behavior, especially when they are integrated into the structure of a plasmonic waveguide. In this paper, we analytically solve the dispersion relation for a slot plasmonic waveguide filled with an anisotropic-stratified metamaterial and reveal that it supports two modes featuring relatively long propagation lengths in the limit of vanishing slot thickness. We classify these modes according to their physical origin and study the variation of their dispersion properties with material parameters.
{"title":"Plasmonic Modes of Metamaterial-Based Slot Waveguides","authors":"I. Rukhlenko, M. Premaratne, G. Agrawal","doi":"10.1155/2012/907183","DOIUrl":"https://doi.org/10.1155/2012/907183","url":null,"abstract":"Most metamaterials exhibit pronounced anisotropic properties that are crucial for the understanding of their superior optical behavior, especially when they are integrated into the structure of a plasmonic waveguide. In this paper, we analytically solve the dispersion relation for a slot plasmonic waveguide filled with an anisotropic-stratified metamaterial and reveal that it supports two modes featuring relatively long propagation lengths in the limit of vanishing slot thickness. We classify these modes according to their physical origin and study the variation of their dispersion properties with material parameters.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2012 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2012/907183","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64366111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An efficient and compact coupler—a device that matches a microwaveguide and a nanowaveguide—is an essential component for practical applications of nanophotonic systems. The number of coupling approaches has been rapidly increasing in the past ten years with the help of plasmonic structures and metamaterials. In this paper we overview recent as well as common solutions for nanocoupling. More specifically we consider the physical principles of operation of the devices based on a tapered waveguide section, a direct coupler, a lens, and a scatterer and support them with a number of examples.
{"title":"Nanocouplers for Infrared and Visible Light","authors":"A. Andryieuski, A. Lavrinenko","doi":"10.1155/2012/839747","DOIUrl":"https://doi.org/10.1155/2012/839747","url":null,"abstract":"An efficient and compact coupler—a device that matches a microwaveguide and a nanowaveguide—is an essential component for practical applications of nanophotonic systems. The number of coupling approaches has been rapidly increasing in the past ten years with the help of plasmonic structures and metamaterials. In this paper we overview recent as well as common solutions for nanocoupling. More specifically we consider the physical principles of operation of the devices based on a tapered waveguide section, a direct coupler, a lens, and a scatterer and support them with a number of examples.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2012 1","pages":"1-17"},"PeriodicalIF":0.0,"publicationDate":"2012-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2012/839747","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64358414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Cao, H. Liu, S. M. Wang, Y. J. Zheng, C. Zhu, Y. Wang, S. Zhu
We studied the sensing properties of stereo-SRRs metamaterials composed from two twisted split-ring resonators (SRRs). Due to the strong hybridization effect in the system, the polarization state of the transmitted wave is greatly changed at resonances. Since the stereo-SRRs structure is strongly coupled to the surrounding medium, the polarization change of the transmitted waves is quite sensitive to the refractive index change of the environment medium. The polarization ratio PRtran = Ty/Tx is used as sensing parameter and its figure of merit can reach 22.3 at the hybridized magnetic plasmon resonance. The results showed that the stereo-SRRs metamaterial can be applied to optical sensors an or other related field.
{"title":"Magnetic Plasmon Sensing in Twisted Split-Ring Resonators","authors":"J. Cao, H. Liu, S. M. Wang, Y. J. Zheng, C. Zhu, Y. Wang, S. Zhu","doi":"10.1155/2012/609691","DOIUrl":"https://doi.org/10.1155/2012/609691","url":null,"abstract":"We studied the sensing properties of stereo-SRRs metamaterials composed from two twisted split-ring resonators (SRRs). Due to the strong hybridization effect in the system, the polarization state of the transmitted wave is greatly changed at resonances. Since the stereo-SRRs structure is strongly coupled to the surrounding medium, the polarization change of the transmitted waves is quite sensitive to the refractive index change of the environment medium. The polarization ratio PRtran = Ty/Tx is used as sensing parameter and its figure of merit can reach 22.3 at the hybridized magnetic plasmon resonance. The results showed that the stereo-SRRs metamaterial can be applied to optical sensors an or other related field.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2012 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2012-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2012/609691","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64337054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chung-Che Huang, B. Gholipour, K. Knight, J. Ou, D. Hewak
Germanium antimony (Ge-Sb) thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875 °C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM) with energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD) techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 2.2 - 2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase change memory and optical, electronic and plasmonic switching.
{"title":"Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application","authors":"Chung-Che Huang, B. Gholipour, K. Knight, J. Ou, D. Hewak","doi":"10.1155/2012/840348","DOIUrl":"https://doi.org/10.1155/2012/840348","url":null,"abstract":"Germanium antimony (Ge-Sb) thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875 °C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM) with energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD) techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 2.2 - 2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase change memory and optical, electronic and plasmonic switching.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2012 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2012/840348","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64358541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
1Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, CA, USA 2Department of Electrical Engineering, University of Hawaii at Manoa, Honolulu, HI, USA 3National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing, China 4Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
{"title":"Optofluidics for Lab-on-a-Chip","authors":"Eric P. Y. Chiou, A. Ohta, Zhihong Li, S. Wereley","doi":"10.1155/2012/935325","DOIUrl":"https://doi.org/10.1155/2012/935325","url":null,"abstract":"1Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, CA, USA 2Department of Electrical Engineering, University of Hawaii at Manoa, Honolulu, HI, USA 3National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing, China 4Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2012 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2012-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2012/935325","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64369269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Kasper, M. Oehme, T. Arguirov, J. Werner, M. Kittler, J. Schulze
Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV) and highly doped Ge (0.73 eV). Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.
{"title":"Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes","authors":"E. Kasper, M. Oehme, T. Arguirov, J. Werner, M. Kittler, J. Schulze","doi":"10.1155/2012/916275","DOIUrl":"https://doi.org/10.1155/2012/916275","url":null,"abstract":"Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV) and highly doped Ge (0.73 eV). Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2012 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2012/916275","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64367026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Chandrasekharam, G. Rajkumar, Thogiti Suresh, P. Y. Reddy
A new high molar extinction coefficient ruthenium(II) bipyridyl complex, “Ru(2,2-bipyridine-4,4′-dicarboxylic acid)(4,4′-bis((3-hexylthiophen-2-yl)ethynyl)-2,2′-bipyridine)(NCS)2 (N(C4H9)4), MC101” was synthesized and fully characterized by 1H-NMR, ESI-MASS, FT-IR, UV-Vis., and fluorescence spectroscopes. The dye showed relatively high molar extinction coefficient of 25.0 × 103 M-1 cm-1 at λ maximum of 544 nm, while the reference C101 has shown 15.8 × 103 M-1cm-1 at λ maximum 528 nm. The monochromatic incident photon-to-collected electron conversion efficiency of 44.1% was obtained for MC101 over the entire visible range, while the C101 sensitized solar cell fabricated and evaluated under identical conditions exhibited 40.1%. The DSSCs fabricated with 0.54 cm2 active area TiO2 electrodes and high efficient electrolyte (E01), from the sensitizers MC101 and C101 exhibited energy conversion efficiencies of 3.25% (short-circuit current density (JSC) = 7.32 mA/cm2, VOC = 610 mV, ff = 0.725) and 2.94% (JSC = 6.60 mA/cm2; VOC = 630 mV; ff = 0.709), respectively, under air mass of 1.5 sunlight.
{"title":"Substitution of Ethynyl-Thiophene Chromophores on Ruthenium Sensitizers: Influence on Thermal and Photovoltaic Performance of Dye-Sensitized Solar Cells","authors":"M. Chandrasekharam, G. Rajkumar, Thogiti Suresh, P. Y. Reddy","doi":"10.1155/2012/482074","DOIUrl":"https://doi.org/10.1155/2012/482074","url":null,"abstract":"A new high molar extinction coefficient ruthenium(II) bipyridyl complex, “Ru(2,2-bipyridine-4,4′-dicarboxylic acid)(4,4′-bis((3-hexylthiophen-2-yl)ethynyl)-2,2′-bipyridine)(NCS)2 (N(C4H9)4), MC101” was synthesized and fully characterized by 1H-NMR, ESI-MASS, FT-IR, UV-Vis., and fluorescence spectroscopes. The dye showed relatively high molar extinction coefficient of 25.0 × 103 M-1 cm-1 at λ maximum of 544 nm, while the reference C101 has shown 15.8 × 103 M-1cm-1 at λ maximum 528 nm. The monochromatic incident photon-to-collected electron conversion efficiency of 44.1% was obtained for MC101 over the entire visible range, while the C101 sensitized solar cell fabricated and evaluated under identical conditions exhibited 40.1%. The DSSCs fabricated with 0.54 cm2 active area TiO2 electrodes and high efficient electrolyte (E01), from the sensitizers MC101 and C101 exhibited energy conversion efficiencies of 3.25% (short-circuit current density (JSC) = 7.32 mA/cm2, VOC = 610 mV, ff = 0.725) and 2.94% (JSC = 6.60 mA/cm2; VOC = 630 mV; ff = 0.709), respectively, under air mass of 1.5 sunlight.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2012 1","pages":"1-10"},"PeriodicalIF":0.0,"publicationDate":"2012-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2012/482074","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64326020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Many methods to improve the solar cell’s efficiency beyond current generation of bulk and thin film of photovoltaic (PV) devices have been reported during the last five decades. Concepts such as multiple exciton generations (MEG), carrier multiplication (CM), hot carrier extraction, and intermediate band solar cells have fundamental flaws, and there is no experimental evidence of fabricating practical higher efficiency solar cells based on the proposed concepts. To take advantages of quantum features of nanostructures for higher performance PV devices, self-assembly-based bottom-up processing techniques are not suitable for manufacturing due to inherent problems of variability, defects, reliability, and yield. For processing nanostructures, new techniques need to be invented with the features of critical dimensional control, structural homogeneity, and lower cost of ownership as compared to the processing tools used in current generations of bulk and thin-film solar cells.
{"title":"Fundamental Issues in Manufacturing Photovoltaic Modules Beyond the Current Generation of Materials","authors":"G. F. Alapatt, Rajendra Singh, K. F. Poole","doi":"10.1155/2012/782150","DOIUrl":"https://doi.org/10.1155/2012/782150","url":null,"abstract":"Many methods to improve the solar cell’s efficiency beyond current generation of bulk and thin film of photovoltaic (PV) devices have been reported during the last five decades. Concepts such as multiple exciton generations (MEG), carrier multiplication (CM), hot carrier extraction, and intermediate band solar cells have fundamental flaws, and there is no experimental evidence of fabricating practical higher efficiency solar cells based on the proposed concepts. To take advantages of quantum features of nanostructures for higher performance PV devices, self-assembly-based bottom-up processing techniques are not suitable for manufacturing due to inherent problems of variability, defects, reliability, and yield. For processing nanostructures, new techniques need to be invented with the features of critical dimensional control, structural homogeneity, and lower cost of ownership as compared to the processing tools used in current generations of bulk and thin-film solar cells.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2012 1","pages":"1-10"},"PeriodicalIF":0.0,"publicationDate":"2012-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2012/782150","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64352461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Globally, the growth rate of the human population is increasing; therefore, there is a huge demand of energy to fulfill their requirements like vehicles, TVs, computers, ACs, and so forth. This causes global warming. Therefore, CO2-free energy is an emergent issue. In this context, solar energy is an alternate of fossil fuels. Dye-sensitized solar cells (DSSCs), organic thin-film solar cells, quantum dot solar cells, schottky solar cells, inorganic-organic heterojunction solar cells, and many others have been developed as an efficient, lowcost technology during the last years. In dye-sensitized solar cells, the sensitizer is one of the key components for high power conversion efficiency. Among various organic/inorganic dyes, the most successful charge transfer sensitizers should be credited to black dye, N3 dye, and N719 dye. Dye-sensitized solar cells based on ruthenium complexes have broad absorption spectra extending into the near-IR region and produce solar-to-electrical energy conversion efficiencies of up to 11%under AM 1.5 irradiation. In order to improve the performance of solar cells, the sensitizer should absorb photons in the near-IR region as well as over the entire visible region of the solar spectrum, and longterm stability is another serious issue. To further improve the efficiency of dye-sensitized solar cells device, our main focus lies in the development of new sensitizers with a good spectral match with the solar emission. This special issue contained high-quality research work addressing the latest innovations in nanomaterials research focused on solar cells, and synthetic nanomaterials considering the importance of light-harvestingmaterials in the design of novel generation of solar cells and smart nanomaterials. We hope that this collection of papers will be a source of ideas and motivation for scientists across different fields in academia and industry to continue further research on organic solar cells.
{"title":"Intelligent Materials for Solar Cells","authors":"S. Singh, A. Islam","doi":"10.1155/2012/919728","DOIUrl":"https://doi.org/10.1155/2012/919728","url":null,"abstract":"Globally, the growth rate of the human population is increasing; therefore, there is a huge demand of energy to fulfill their requirements like vehicles, TVs, computers, ACs, and so forth. This causes global warming. Therefore, CO2-free energy is an emergent issue. In this context, solar energy is an alternate of fossil fuels. Dye-sensitized solar cells (DSSCs), organic thin-film solar cells, quantum dot solar cells, schottky solar cells, inorganic-organic heterojunction solar cells, and many others have been developed as an efficient, lowcost technology during the last years. In dye-sensitized solar cells, the sensitizer is one of the key components for high power conversion efficiency. Among various organic/inorganic dyes, the most successful charge transfer sensitizers should be credited to black dye, N3 dye, and N719 dye. Dye-sensitized solar cells based on ruthenium complexes have broad absorption spectra extending into the near-IR region and produce solar-to-electrical energy conversion efficiencies of up to 11%under AM 1.5 irradiation. In order to improve the performance of solar cells, the sensitizer should absorb photons in the near-IR region as well as over the entire visible region of the solar spectrum, and longterm stability is another serious issue. To further improve the efficiency of dye-sensitized solar cells device, our main focus lies in the development of new sensitizers with a good spectral match with the solar emission. This special issue contained high-quality research work addressing the latest innovations in nanomaterials research focused on solar cells, and synthetic nanomaterials considering the importance of light-harvestingmaterials in the design of novel generation of solar cells and smart nanomaterials. We hope that this collection of papers will be a source of ideas and motivation for scientists across different fields in academia and industry to continue further research on organic solar cells.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2012 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2012/919728","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64367084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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