Pub Date : 2022-04-26DOI: 10.1080/23746149.2022.2065218
R. R. Tamming, J. Hodgkiss, Kai Chen
ABSTRACT Ultrafast optical spectroscopy delivers unparalleled insights into the dynamic response of photoactive materials, including semiconducting, photonic and phase-change materials. The most applied experimental tool – transient absorption spectroscopy – derives signals from induced changes in the intensity of transmitted light, assumed to relate to the imaginary part of the refractive index. However, the entire complex refractive index of materials changes in the excited state; changes in the real part of the refractive index can have significant effects on transient absorption spectra and the function of optical devices. In this review, we introduce an emerging ultrafast spectroscopy method – frequency domain interferometry. This simple adaptation of transient absorption spectroscopy provides a model-independent means of spectrally resolving photoinduced changes in a materials refractive index. After introducing the theory and implementation of the method, we describe several case studies, including the optical response of metal-halide perovskites and phase modulators, and surface displacement of phase-change materials. Finally, we describe recent and future improvements that can enhance the time-resolution and signal sensitivity of this technique. The advances and applications highlighted in this review demonstrate the potential of the method to become a standard part of the ultrafast spectroscopy toolbox for characterising optoelectronic and photonic materials and devices. GRAPHICAL ABSTRACT
{"title":"Frequency domain interferometry for measuring ultrafast refractive index modulation and surface deformation","authors":"R. R. Tamming, J. Hodgkiss, Kai Chen","doi":"10.1080/23746149.2022.2065218","DOIUrl":"https://doi.org/10.1080/23746149.2022.2065218","url":null,"abstract":"ABSTRACT Ultrafast optical spectroscopy delivers unparalleled insights into the dynamic response of photoactive materials, including semiconducting, photonic and phase-change materials. The most applied experimental tool – transient absorption spectroscopy – derives signals from induced changes in the intensity of transmitted light, assumed to relate to the imaginary part of the refractive index. However, the entire complex refractive index of materials changes in the excited state; changes in the real part of the refractive index can have significant effects on transient absorption spectra and the function of optical devices. In this review, we introduce an emerging ultrafast spectroscopy method – frequency domain interferometry. This simple adaptation of transient absorption spectroscopy provides a model-independent means of spectrally resolving photoinduced changes in a materials refractive index. After introducing the theory and implementation of the method, we describe several case studies, including the optical response of metal-halide perovskites and phase modulators, and surface displacement of phase-change materials. Finally, we describe recent and future improvements that can enhance the time-resolution and signal sensitivity of this technique. The advances and applications highlighted in this review demonstrate the potential of the method to become a standard part of the ultrafast spectroscopy toolbox for characterising optoelectronic and photonic materials and devices. GRAPHICAL ABSTRACT","PeriodicalId":7374,"journal":{"name":"Advances in Physics: X","volume":" ","pages":""},"PeriodicalIF":6.0,"publicationDate":"2022-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42661236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-20DOI: 10.1080/23746149.2022.2064230
Weiyao Zhao, Xiaolin Wang
ABSTRACT Quantum oscillation is an important phenomenon in low temperature transport studies of topological materials. In three-dimensional topological insulators, Dirac semimetals, Weyl semimetals, and other topological nontrivial materials, the topologically nontrivial band structure will add a phase correction to the quantum oscillation patterns, which is known as the nontrivial Berry phase. Berry phase analysis via quantum oscillation is a powerful method to investigate the nontrivial band topology of topological materials. In this review, we introduce the concepts of the Berry phase and quantum oscillations, and provide some classification of topological materials. We then employ some important studies on each type of topological material to discuss the nontrivial Berry phase. We conclude by pointing out the importance of quantum transport studies on topological materials, as well as drawing attention to the exploration of the nontrivial Berry phase in a new material system that could shed more light on the topology-based electronics. Graphical Abstract
{"title":"Berry phase in quantum oscillations of topological materials","authors":"Weiyao Zhao, Xiaolin Wang","doi":"10.1080/23746149.2022.2064230","DOIUrl":"https://doi.org/10.1080/23746149.2022.2064230","url":null,"abstract":"ABSTRACT Quantum oscillation is an important phenomenon in low temperature transport studies of topological materials. In three-dimensional topological insulators, Dirac semimetals, Weyl semimetals, and other topological nontrivial materials, the topologically nontrivial band structure will add a phase correction to the quantum oscillation patterns, which is known as the nontrivial Berry phase. Berry phase analysis via quantum oscillation is a powerful method to investigate the nontrivial band topology of topological materials. In this review, we introduce the concepts of the Berry phase and quantum oscillations, and provide some classification of topological materials. We then employ some important studies on each type of topological material to discuss the nontrivial Berry phase. We conclude by pointing out the importance of quantum transport studies on topological materials, as well as drawing attention to the exploration of the nontrivial Berry phase in a new material system that could shed more light on the topology-based electronics. Graphical Abstract","PeriodicalId":7374,"journal":{"name":"Advances in Physics: X","volume":" ","pages":""},"PeriodicalIF":6.0,"publicationDate":"2022-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44928390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-20DOI: 10.1080/23746149.2022.2093129
M. Muser, S. Sukhomlinov, L. Pastewka
Interatomic potentials approximate the potential energy of atoms as a function of their coordinates. Their main application is the effective simulation of many-atom systems. Here, we review empirical interatomic potentials designed to reproduce elastic properties, defect energies, bond breaking, bond formation, and even redox reactions. We discuss popular two-body potentials, embedded-atom models for metals, bond-order potentials for covalently bonded systems, polarizable potentials including charge-transfer approaches for ionic systems and quantum-Drude oscillator models mimicking higher-order and many-body dispersion. Particular emphasis is laid on the question what constraints ensue from the functional form of a potential, e.g., in what way Cauchy relations for elastic tensor elements can be violated and what this entails for the ratio of defect and cohesive energies, or why the ratio of boiling to melting temperature tends to be large for potentials describing metals but small for short-ranged pair potentials. The review is meant to be pedagogical rather than encyclopedic. This is why we highlight potentials with functional forms sufficiently simple to remain amenable to analytical treatments. Our main objective is to provide a stimulus for how existing approaches can be advanced or meaningfully combined to extent the scope of simulations based on empirical potentials.
{"title":"Interatomic potentials: achievements and challenges","authors":"M. Muser, S. Sukhomlinov, L. Pastewka","doi":"10.1080/23746149.2022.2093129","DOIUrl":"https://doi.org/10.1080/23746149.2022.2093129","url":null,"abstract":"Interatomic potentials approximate the potential energy of atoms as a function of their coordinates. Their main application is the effective simulation of many-atom systems. Here, we review empirical interatomic potentials designed to reproduce elastic properties, defect energies, bond breaking, bond formation, and even redox reactions. We discuss popular two-body potentials, embedded-atom models for metals, bond-order potentials for covalently bonded systems, polarizable potentials including charge-transfer approaches for ionic systems and quantum-Drude oscillator models mimicking higher-order and many-body dispersion. Particular emphasis is laid on the question what constraints ensue from the functional form of a potential, e.g., in what way Cauchy relations for elastic tensor elements can be violated and what this entails for the ratio of defect and cohesive energies, or why the ratio of boiling to melting temperature tends to be large for potentials describing metals but small for short-ranged pair potentials. The review is meant to be pedagogical rather than encyclopedic. This is why we highlight potentials with functional forms sufficiently simple to remain amenable to analytical treatments. Our main objective is to provide a stimulus for how existing approaches can be advanced or meaningfully combined to extent the scope of simulations based on empirical potentials.","PeriodicalId":7374,"journal":{"name":"Advances in Physics: X","volume":" ","pages":""},"PeriodicalIF":6.0,"publicationDate":"2022-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46558835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-17DOI: 10.1080/23746149.2022.2048966
H. Abdelsalam, Q. Zhang
ABSTRACT Quantum dots based on two-dimensional materials (2D-QDs) have received significant attention due to their exceptional physical, chemical, and biological properties. They have shown unprecedented performance and efficiency in many fields including electronics, spintronics, energy, water treatment, sensors, and biological applications. This article provides a critical review on the recent progress of 2D-DQs, their synthesis approaches, categories, properties, and applications. The review introduces various types of 2D-QDs, such as graphene, hBN, silicene, phosphorene, transition metal dichalcogenides, and MXenes that show a wide range of properties applicable for different fields. We describe in detail the electronic, magnetic, optical, catalytic, and biological properties of 2D-QDs and relate them to the suitable applications. Future directions for the research in 2D-QDs are given based on the novel properties provided by the newly discovered 2D materials and their heterostructures. Graphical Abstract
{"title":"Properties and applications of quantum dots derived from two-dimensional materials","authors":"H. Abdelsalam, Q. Zhang","doi":"10.1080/23746149.2022.2048966","DOIUrl":"https://doi.org/10.1080/23746149.2022.2048966","url":null,"abstract":"ABSTRACT Quantum dots based on two-dimensional materials (2D-QDs) have received significant attention due to their exceptional physical, chemical, and biological properties. They have shown unprecedented performance and efficiency in many fields including electronics, spintronics, energy, water treatment, sensors, and biological applications. This article provides a critical review on the recent progress of 2D-DQs, their synthesis approaches, categories, properties, and applications. The review introduces various types of 2D-QDs, such as graphene, hBN, silicene, phosphorene, transition metal dichalcogenides, and MXenes that show a wide range of properties applicable for different fields. We describe in detail the electronic, magnetic, optical, catalytic, and biological properties of 2D-QDs and relate them to the suitable applications. Future directions for the research in 2D-QDs are given based on the novel properties provided by the newly discovered 2D materials and their heterostructures. Graphical Abstract","PeriodicalId":7374,"journal":{"name":"Advances in Physics: X","volume":" ","pages":""},"PeriodicalIF":6.0,"publicationDate":"2022-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46071850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
ABSTRACT Quantum memory (QM) enables quantum state mapping between flying and stationary quantum states and is the building block of quantum information science, which enables to achieve a plethora of quantum information protocols, such as quantum state transfer across remote quantum nodes, distributed quantum logic gate, and quantum precession measurement network. Great progresses of quantum memories have been achieved, and electromagnetically induced transparency (EIT) is one of the well-understood approaches of QM. Quantum states of light are the essential quantum resources for implementing quantum enhanced task, and thus it is a long-standing goal to store and release non-classical states of light. This paper presents an up-to-date review on recent developments in EIT-based QM: EIT quantum memories have been realized in warm atomic cell, cold atoms and solid system, respectively; and EIT mechanism has been applied to store and release single photon, squeezed state, entangled photon pairs and multipartite entangled states of optical modes. Graphical Abstract
{"title":"Electromagnetically induced transparency quantum memory for non-classical states of light","authors":"Xing Lei, Lixia Ma, Jieli Yan, Xiaoyu Zhou, Zhihui Yan, X. Jia","doi":"10.1080/23746149.2022.2060133","DOIUrl":"https://doi.org/10.1080/23746149.2022.2060133","url":null,"abstract":"ABSTRACT Quantum memory (QM) enables quantum state mapping between flying and stationary quantum states and is the building block of quantum information science, which enables to achieve a plethora of quantum information protocols, such as quantum state transfer across remote quantum nodes, distributed quantum logic gate, and quantum precession measurement network. Great progresses of quantum memories have been achieved, and electromagnetically induced transparency (EIT) is one of the well-understood approaches of QM. Quantum states of light are the essential quantum resources for implementing quantum enhanced task, and thus it is a long-standing goal to store and release non-classical states of light. This paper presents an up-to-date review on recent developments in EIT-based QM: EIT quantum memories have been realized in warm atomic cell, cold atoms and solid system, respectively; and EIT mechanism has been applied to store and release single photon, squeezed state, entangled photon pairs and multipartite entangled states of optical modes. Graphical Abstract","PeriodicalId":7374,"journal":{"name":"Advances in Physics: X","volume":" ","pages":""},"PeriodicalIF":6.0,"publicationDate":"2022-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43887035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-13DOI: 10.1080/23746149.2022.2065217
K. Terabe, T. Tsuchiya, T. Tsuruoka
ABSTRACT The atomic scale switch, which operates on the principle of solid-state ionics, is an ultrafine device that takes advantage of the fact that the properties of materials can be changed significantly by the transport and chemical reaction of a small number of ions in a solid. The switch (e.g. ‘atomic switch’) actually works by using an ion-conducting solid electrolyte or an ion-/electron-conducting mixed-conductor as the device material, and by applying an external voltage to control local ion transport and electrochemical reaction. With the application of an external voltage, a bridge is formed as a conductive filament in the solid electrolyte or the mixed conductor between electrodes. The atomic structure of the point contact in said filament can be reversibly changed by precise control of the applied voltage. By controlling the atomic structure of the point contact, interesting functions are obtained, such as fast on/off resistive switching, switching between each state of quantized conductance and neuromorphic properties. This atomic scale switch has the potential to overcome the functional and performance limitations of conventional integrated circuits because it can be used in conjunction with extant semiconductor devices. Graphical abstract
{"title":"Atomic scale switches based on solid state ionics","authors":"K. Terabe, T. Tsuchiya, T. Tsuruoka","doi":"10.1080/23746149.2022.2065217","DOIUrl":"https://doi.org/10.1080/23746149.2022.2065217","url":null,"abstract":"ABSTRACT The atomic scale switch, which operates on the principle of solid-state ionics, is an ultrafine device that takes advantage of the fact that the properties of materials can be changed significantly by the transport and chemical reaction of a small number of ions in a solid. The switch (e.g. ‘atomic switch’) actually works by using an ion-conducting solid electrolyte or an ion-/electron-conducting mixed-conductor as the device material, and by applying an external voltage to control local ion transport and electrochemical reaction. With the application of an external voltage, a bridge is formed as a conductive filament in the solid electrolyte or the mixed conductor between electrodes. The atomic structure of the point contact in said filament can be reversibly changed by precise control of the applied voltage. By controlling the atomic structure of the point contact, interesting functions are obtained, such as fast on/off resistive switching, switching between each state of quantized conductance and neuromorphic properties. This atomic scale switch has the potential to overcome the functional and performance limitations of conventional integrated circuits because it can be used in conjunction with extant semiconductor devices. Graphical abstract","PeriodicalId":7374,"journal":{"name":"Advances in Physics: X","volume":" ","pages":""},"PeriodicalIF":6.0,"publicationDate":"2022-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43271173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-12DOI: 10.1080/23746149.2022.2044904
R. Leturcq, R. Bhusari, E. Barborini
ABSTRACT In the domain of gas sensing, metal oxide nanostructures have been demonstrated to have very attractive properties due to their large surface-over-volume ratio, combined with the possibility to use multiple materials and multi-functional properties. Here, we review the basic physical principles underlying the transducer function of metal oxide nanostructures, from single nanostructures to nanostructure networks. These principles have been adapted to describe the response of more complex nanostructures, such as heterostructures, combining two different metal oxide materials, or a metal with a metal oxide, in order to further enhance the sensitivity and selectivity of such devices. We finally present the activation of nanostructures by light exposure as a promising alternative to the standard method based on high temperature activation, which is earning increasing consensus in the perspective of low-power Internet of Things applications. Graphical abstract
{"title":"Physical mechanisms underpinning conductometric gas sensing properties of metal oxide nanostructures","authors":"R. Leturcq, R. Bhusari, E. Barborini","doi":"10.1080/23746149.2022.2044904","DOIUrl":"https://doi.org/10.1080/23746149.2022.2044904","url":null,"abstract":"ABSTRACT In the domain of gas sensing, metal oxide nanostructures have been demonstrated to have very attractive properties due to their large surface-over-volume ratio, combined with the possibility to use multiple materials and multi-functional properties. Here, we review the basic physical principles underlying the transducer function of metal oxide nanostructures, from single nanostructures to nanostructure networks. These principles have been adapted to describe the response of more complex nanostructures, such as heterostructures, combining two different metal oxide materials, or a metal with a metal oxide, in order to further enhance the sensitivity and selectivity of such devices. We finally present the activation of nanostructures by light exposure as a promising alternative to the standard method based on high temperature activation, which is earning increasing consensus in the perspective of low-power Internet of Things applications. Graphical abstract","PeriodicalId":7374,"journal":{"name":"Advances in Physics: X","volume":" ","pages":""},"PeriodicalIF":6.0,"publicationDate":"2022-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49402588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-12DOI: 10.1080/23746149.2022.2057234
Junfeng Han, W. Xiao, Yugui Yao
ABSTRACT Bismuth halogenides, a family of quasi-one-dimensional (1D) materials, including α and α phases of Bi4Br4 and Bi4I4, have been predicted to exhibit rich and interesting topological properties. The single layer of Bi4Br4 was demonstrated to be a quantum spin Hall insulator (QSHI) with a 0.18 eV gap. Such a band gap is large enough for the observation of QSHI at room temperature. Bulk α-Bi4Br4 was categorized as a higher-order topological insulator and was soon examined in experiments. In addition, the α-Bi4Br4 exhibit simultaneously the topological phase and superconductive phase under 3.8–4.3 GPa pressure. While the single layer of Bi4I4 was shown to be close to the critical point of the QSHI/trivial-insulator phase transition, the α-Bi4I4 was considered to be a strong or weak topological insulator. In this work, we reviewed the recent progress in the topological properties of bismuth halogenides, including the theoretical calculations, angle-resolved photoemission spectroscopy, scanned tunneling microscopy analyses, quantum transport measurement and the superconducting phase transfer under pressure. We expect further research of this family material about the non-trivial superconductor and possible Majorana, room-temperature quantum transport effect and potential application in the quantum device for the electronics and information technology. Graphical Abstract
{"title":"Quasi-one-dimensional topological material Bi4X4(X=Br,I)","authors":"Junfeng Han, W. Xiao, Yugui Yao","doi":"10.1080/23746149.2022.2057234","DOIUrl":"https://doi.org/10.1080/23746149.2022.2057234","url":null,"abstract":"ABSTRACT Bismuth halogenides, a family of quasi-one-dimensional (1D) materials, including α and α phases of Bi4Br4 and Bi4I4, have been predicted to exhibit rich and interesting topological properties. The single layer of Bi4Br4 was demonstrated to be a quantum spin Hall insulator (QSHI) with a 0.18 eV gap. Such a band gap is large enough for the observation of QSHI at room temperature. Bulk α-Bi4Br4 was categorized as a higher-order topological insulator and was soon examined in experiments. In addition, the α-Bi4Br4 exhibit simultaneously the topological phase and superconductive phase under 3.8–4.3 GPa pressure. While the single layer of Bi4I4 was shown to be close to the critical point of the QSHI/trivial-insulator phase transition, the α-Bi4I4 was considered to be a strong or weak topological insulator. In this work, we reviewed the recent progress in the topological properties of bismuth halogenides, including the theoretical calculations, angle-resolved photoemission spectroscopy, scanned tunneling microscopy analyses, quantum transport measurement and the superconducting phase transfer under pressure. We expect further research of this family material about the non-trivial superconductor and possible Majorana, room-temperature quantum transport effect and potential application in the quantum device for the electronics and information technology. Graphical Abstract","PeriodicalId":7374,"journal":{"name":"Advances in Physics: X","volume":" ","pages":""},"PeriodicalIF":6.0,"publicationDate":"2022-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43390557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-16DOI: 10.1080/23746149.2022.2046157
Jialin Zhang, N. Cheng, B. Ge
ABSTRACT To address the increasing energy consumption and serious environmental problems, it is critical to develop efficient and clean energy conversion and storage devices. Among various categories of materials, metal-organic frameworks (MOFs) are one of the promising candidates that can realize the practical application of these devices. Therefore, it has been recognized that revealing the composition-structure-property relationship of MOFs by transmission electron microscopy (TEM) can offer some guidelines for designing novel materials with desirable properties. Nevertheless, owing to their organic parts, MOFs are too beam sensitive to be characterized by high energy electrons. To resolve this problem, various advanced techniques have been developed to accomplish the static and dynamic MOFs characterizations. Herein, we made a brief summary of the updated progress on characterization of MOFs by TEM until now, and revealed the key issues associated with static and dynamic TEM characterization of MOFs. Graphical Abstract
{"title":"Characterization of metal-organic frameworks by transmission electron microscopy","authors":"Jialin Zhang, N. Cheng, B. Ge","doi":"10.1080/23746149.2022.2046157","DOIUrl":"https://doi.org/10.1080/23746149.2022.2046157","url":null,"abstract":"ABSTRACT To address the increasing energy consumption and serious environmental problems, it is critical to develop efficient and clean energy conversion and storage devices. Among various categories of materials, metal-organic frameworks (MOFs) are one of the promising candidates that can realize the practical application of these devices. Therefore, it has been recognized that revealing the composition-structure-property relationship of MOFs by transmission electron microscopy (TEM) can offer some guidelines for designing novel materials with desirable properties. Nevertheless, owing to their organic parts, MOFs are too beam sensitive to be characterized by high energy electrons. To resolve this problem, various advanced techniques have been developed to accomplish the static and dynamic MOFs characterizations. Herein, we made a brief summary of the updated progress on characterization of MOFs by TEM until now, and revealed the key issues associated with static and dynamic TEM characterization of MOFs. Graphical Abstract","PeriodicalId":7374,"journal":{"name":"Advances in Physics: X","volume":" ","pages":""},"PeriodicalIF":6.0,"publicationDate":"2022-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48591223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-15DOI: 10.1080/23746149.2022.2046156
Jooyeong Yun, Seokwoo Kim, Sunae So, Minkyung Kim, J. Rho
ABSTRACT In this paper, we review the specific field that combines topological photonics and deep learning (DL). Recent progress of topological photonics has attracted enormous interest for its novel and exotic properties such as unidirectional propagation of electromagnetic waves and robust manipulation of photons. These phenomena are expected to meet the growing demands of next-generation nanophotonic devices. However, to model and engineer such highly-complex systems are challenging. Recently, DL, a subset of machine learning methods using neural network (NN) algorithms, has been introduced in the field of nanophotonics as an effective way to capture a complex nonlinear relationship between design parameters and their corresponding optical properties. In particular, among various fields of nanophotonics, DL applications to topological photonics empowered by NN models have shown astonishing results in capturing the global material properties of topological systems. This review presents fundamental concepts of topological photonics and the basics of DL applied to nanophotonics in parallel. Recent studies of DL applications to topological systems using NN models are discussed thereafter. The summary and outlook showing the potential of taking data-driven approaches in topological photonics research and general physics are also discussed. Graphical Abstract
{"title":"Deep learning for topological photonics","authors":"Jooyeong Yun, Seokwoo Kim, Sunae So, Minkyung Kim, J. Rho","doi":"10.1080/23746149.2022.2046156","DOIUrl":"https://doi.org/10.1080/23746149.2022.2046156","url":null,"abstract":"ABSTRACT In this paper, we review the specific field that combines topological photonics and deep learning (DL). Recent progress of topological photonics has attracted enormous interest for its novel and exotic properties such as unidirectional propagation of electromagnetic waves and robust manipulation of photons. These phenomena are expected to meet the growing demands of next-generation nanophotonic devices. However, to model and engineer such highly-complex systems are challenging. Recently, DL, a subset of machine learning methods using neural network (NN) algorithms, has been introduced in the field of nanophotonics as an effective way to capture a complex nonlinear relationship between design parameters and their corresponding optical properties. In particular, among various fields of nanophotonics, DL applications to topological photonics empowered by NN models have shown astonishing results in capturing the global material properties of topological systems. This review presents fundamental concepts of topological photonics and the basics of DL applied to nanophotonics in parallel. Recent studies of DL applications to topological systems using NN models are discussed thereafter. The summary and outlook showing the potential of taking data-driven approaches in topological photonics research and general physics are also discussed. Graphical Abstract","PeriodicalId":7374,"journal":{"name":"Advances in Physics: X","volume":" ","pages":""},"PeriodicalIF":6.0,"publicationDate":"2022-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43468653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：