The thermal radiation impact of a current carrying conductor and a metallic object cannot be neglected. The improper knowledge of this effect and the causes are one of the major reasons that contribute to the high number of electrocution cases registered in Nigeria at various levels. This research reveals the neglected magnetic effect that exist around a current carrying conductor and a metallic object near it as one of the silent causes of electric hazard that kill people on daily basis. The researcher observered that electrons are readily available on Aluminum ladder and that photon energy from sunlight or thermal radiation usually powers this electron on the metallic ladder without the knowledge of the operator thereby causing current to start flowing on both the ladder and the current carrying conductor in the same direction. This phenomenon causes current to start flowing on the two naked conductors without the knowledge of some operators who thought that current is only flowing on transformer accessories (G and P unit). The force of attraction acts on two conductors carrying current in the same direction. For this reason, the current from photon energy (thermal radiation) and electrons flow spontaneously in all directions thereby attracting the current that flows from transformer accessories (G and P unit) placed 5 meters distance from the Aluminum ladder. The magnetic impact of this explanation is very deadly as it could result to what is known as electrocution. The researcher recommended the possible way of reducing electrical hazard that might arise from such incidence. Thermal radiation can lead to “Switching –ON” of a device to supply current when the majorities of the number of holes are equals to the no of electrons. Thermal radiation can equally leads to “Switching Off” of a device to stop supplying current when the no of holes is less than number of electrons. Naturally, every semiconductor material has a good reasonable no of electrons existing on the surface of that material and the sunlight is a good carrier of photon. Keywords : Thermal radiation, Magnetic impact, conductor, electrocution, Photon energy and transformer accessories, semiconductor material. DOI : 10.7176/APTA/80-07 Publication date :October 31 st 2019
{"title":"THE THERMAL RADIATION IMPACT OF A CURRENT CARRYING CONDUCTOR AND A METALLIC OBJECT: A CASE STUDY OF TRANSFORMER G& P ACCESSORIES AND ALUMINUM LADDER","authors":"I. Okoye","doi":"10.7176/apta/80-07","DOIUrl":"https://doi.org/10.7176/apta/80-07","url":null,"abstract":"The thermal radiation impact of a current carrying conductor and a metallic object cannot be neglected. The improper knowledge of this effect and the causes are one of the major reasons that contribute to the high number of electrocution cases registered in Nigeria at various levels. This research reveals the neglected magnetic effect that exist around a current carrying conductor and a metallic object near it as one of the silent causes of electric hazard that kill people on daily basis. The researcher observered that electrons are readily available on Aluminum ladder and that photon energy from sunlight or thermal radiation usually powers this electron on the metallic ladder without the knowledge of the operator thereby causing current to start flowing on both the ladder and the current carrying conductor in the same direction. This phenomenon causes current to start flowing on the two naked conductors without the knowledge of some operators who thought that current is only flowing on transformer accessories (G and P unit). The force of attraction acts on two conductors carrying current in the same direction. For this reason, the current from photon energy (thermal radiation) and electrons flow spontaneously in all directions thereby attracting the current that flows from transformer accessories (G and P unit) placed 5 meters distance from the Aluminum ladder. The magnetic impact of this explanation is very deadly as it could result to what is known as electrocution. The researcher recommended the possible way of reducing electrical hazard that might arise from such incidence. Thermal radiation can lead to “Switching –ON” of a device to supply current when the majorities of the number of holes are equals to the no of electrons. Thermal radiation can equally leads to “Switching Off” of a device to stop supplying current when the no of holes is less than number of electrons. Naturally, every semiconductor material has a good reasonable no of electrons existing on the surface of that material and the sunlight is a good carrier of photon. Keywords : Thermal radiation, Magnetic impact, conductor, electrocution, Photon energy and transformer accessories, semiconductor material. DOI : 10.7176/APTA/80-07 Publication date :October 31 st 2019","PeriodicalId":7386,"journal":{"name":"Advances in Physics Theories and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78998757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Phonon Frequency Spectrum and Lattice Dynamics and Normal Coordinate Analysis of HTSC Tl2Ca2Ba2Cu3O10","authors":"","doi":"10.7176/apta/80-04","DOIUrl":"https://doi.org/10.7176/apta/80-04","url":null,"abstract":"","PeriodicalId":7386,"journal":{"name":"Advances in Physics Theories and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83752239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Every so often, a new term comes along that represents an emerging scientific trend. Biotechnology, genetic engineering, tissue engineering, gene therapy, combinatorial chemistry, high throughput screening, and stem cells are some examples of past terms. Recently, nanotechnology has become a popular term representing the main efforts of the current science and technology. Nanotechnology, which is still not a mature technology and thus, more appropriately called nanoscience, usually refers to research at the scale of 100 nm or less. Nanotechnology is unique in that it represents not just one specific area, but a vast variety of disciplines ranging from basic material science to personal care applications. Thus this technology is very advanced and various researches are a heading in this field very quickly One of the important areas of nanotechnology is “nanomedicine,” which, refers to highly specific medical intervention at the molecular scale for diagnosis, prevention and treatment of diseases The nanoparticles are available in various shapes and sizes and these are become very important elements in novel drug delivery systems called nanomedicine. These nanoparticles are developed in appropriate sizes and used such that they target at the targeted places in the body. This development of nanoparticles had brought a revolutionary change in the field of drug delivery systems.. In drug delivery, nanotechnology is just beginning to make an impact. Many of the current “nano” drug delivery systems, however, are remnants of conventional drug delivery systems that happen to be in the nanometer range, such as liposomes, polymeric micelles, nanoparticles, dendrimers, and nanocrystals. Liposomes and polymer micelles were first prepared in 1960’s, and nanoparticles and dendrimers in 1970’s. Colloidal gold particles in nanometer sizes were first prepared by Michael Faraday more than 150 years ago, but were never referred to or associated with nanoparticles or nanotechnology until recently. About three decades ago, colloidal gold particles were conjugated with antibody for target specific staining, known as immunogold staining. Such an application may be considered as a precursor of recent explosive applications of gold particles in nanotechnology. The importance of nanotechnology in drug delivery is in the concept and ability to manipulate molecules and supramolecular structures for producing devices with programmed functions. Conventional liposomes, polymeric micelles, and nanoparticles are now called “nanovehicles,”. Those conventional drug delivery systems would have evolved to the present state regardless of the current nanotechnology revolution. Cancer is one of the most challenging diseases today, and brain cancer is one of the most difficult malignancies to detect and treat mainly because of the difficulty in getting imaging and therapeutic agents across the blood-brain barrier and into the brain. Many investigators have found that nanoparticles hold
{"title":"Applications of Nanotechnology in Drug Delivery Systems","authors":"K. Sonamuthu","doi":"10.7176/apta/80-02","DOIUrl":"https://doi.org/10.7176/apta/80-02","url":null,"abstract":"Every so often, a new term comes along that represents an emerging scientific trend. Biotechnology, genetic engineering, tissue engineering, gene therapy, combinatorial chemistry, high throughput screening, and stem cells are some examples of past terms. Recently, nanotechnology has become a popular term representing the main efforts of the current science and technology. Nanotechnology, which is still not a mature technology and thus, more appropriately called nanoscience, usually refers to research at the scale of 100 nm or less. Nanotechnology is unique in that it represents not just one specific area, but a vast variety of disciplines ranging from basic material science to personal care applications. Thus this technology is very advanced and various researches are a heading in this field very quickly One of the important areas of nanotechnology is “nanomedicine,” which, refers to highly specific medical intervention at the molecular scale for diagnosis, prevention and treatment of diseases The nanoparticles are available in various shapes and sizes and these are become very important elements in novel drug delivery systems called nanomedicine. These nanoparticles are developed in appropriate sizes and used such that they target at the targeted places in the body. This development of nanoparticles had brought a revolutionary change in the field of drug delivery systems.. In drug delivery, nanotechnology is just beginning to make an impact. Many of the current “nano” drug delivery systems, however, are remnants of conventional drug delivery systems that happen to be in the nanometer range, such as liposomes, polymeric micelles, nanoparticles, dendrimers, and nanocrystals. Liposomes and polymer micelles were first prepared in 1960’s, and nanoparticles and dendrimers in 1970’s. Colloidal gold particles in nanometer sizes were first prepared by Michael Faraday more than 150 years ago, but were never referred to or associated with nanoparticles or nanotechnology until recently. About three decades ago, colloidal gold particles were conjugated with antibody for target specific staining, known as immunogold staining. Such an application may be considered as a precursor of recent explosive applications of gold particles in nanotechnology. The importance of nanotechnology in drug delivery is in the concept and ability to manipulate molecules and supramolecular structures for producing devices with programmed functions. Conventional liposomes, polymeric micelles, and nanoparticles are now called “nanovehicles,”. Those conventional drug delivery systems would have evolved to the present state regardless of the current nanotechnology revolution. Cancer is one of the most challenging diseases today, and brain cancer is one of the most difficult malignancies to detect and treat mainly because of the difficulty in getting imaging and therapeutic agents across the blood-brain barrier and into the brain. Many investigators have found that nanoparticles hold","PeriodicalId":7386,"journal":{"name":"Advances in Physics Theories and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75210816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
According to the fact that, in comparison with the other spirometers, a flow-based spirometer benefits from a wide range of advantages such as being easy to use and calibrate, in this study, we make an attempt to design the optimum turbine just by changing the geometry of blades in order to increase the efficiency of a flow-based spirometer. In fact, the aim of the study is to design and simulate different types of blades in order to increase the mixing of breathing air and decrease resistance to breathing. To reach this aim, blades with different shear angles have been investigated and the most appropriate one has been reported. Keywords: Spirometer, Flow-based, Turbine, Simulation DOI : 10.7176/APTA/80-01 Publication date :October 31 st 2019
{"title":"Theoretical Investigation of Geometrical Effects of Blades on Mixing of Breathing Air in a Flow-Based Spirometer","authors":"Mohammadreza Chimerad","doi":"10.7176/apta/80-01","DOIUrl":"https://doi.org/10.7176/apta/80-01","url":null,"abstract":"According to the fact that, in comparison with the other spirometers, a flow-based spirometer benefits from a wide range of advantages such as being easy to use and calibrate, in this study, we make an attempt to design the optimum turbine just by changing the geometry of blades in order to increase the efficiency of a flow-based spirometer. In fact, the aim of the study is to design and simulate different types of blades in order to increase the mixing of breathing air and decrease resistance to breathing. To reach this aim, blades with different shear angles have been investigated and the most appropriate one has been reported. Keywords: Spirometer, Flow-based, Turbine, Simulation DOI : 10.7176/APTA/80-01 Publication date :October 31 st 2019","PeriodicalId":7386,"journal":{"name":"Advances in Physics Theories and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82905107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The dynamics of heavy-ion fusion reaction elaborate in the interaction of 1616O "> projectiles with 16165Ho "> and 51 V targets at ≈3-8MeV/nucleon specific energies were studied. This study were emphases on the relationship between entrance channel belongings and incomplete fusion reaction. The experimentally measured excitation functions of various reaction products duplicated by complete or incomplete fusions of 1616O "> + 1651V"> , 16165Ho "> projectile-target systems had been compared and analyzed within the predicted excitation functions, using the statistical model code PACE4. For α-emitting channels in the present systems, the measured excitation functions had been highest than the predictions of the theoretical model code, which may focuses at these energies. However for non-alpha emitting channels in this system the measured excitation function had been nice agreement with the theoretical values. An endeavor were made to nearly the incomplete fusion fraction that designates importance of incomplete fusion process. Keywords: Alpha emitted, CF reaction, Entrance channel, Heavy ion fusion, ICF reaction, Non alpha emitted DOI : 10.7176/APTA/79-03 Publication date :September 30 th 2019
{"title":"Investigating the Influence of Incomplete Fusion on Complete Fusion of 16 O –Induced Reaction ≈ 3-8 MeV/nucleon","authors":"Asnake Girma","doi":"10.7176/apta/79-03","DOIUrl":"https://doi.org/10.7176/apta/79-03","url":null,"abstract":"The dynamics of heavy-ion fusion reaction elaborate in the interaction of 1616O \"> projectiles with 16165Ho \"> and 51 V targets at ≈3-8MeV/nucleon specific energies were studied. This study were emphases on the relationship between entrance channel belongings and incomplete fusion reaction. The experimentally measured excitation functions of various reaction products duplicated by complete or incomplete fusions of 1616O \"> + 1651V\"> , 16165Ho \"> projectile-target systems had been compared and analyzed within the predicted excitation functions, using the statistical model code PACE4. For α-emitting channels in the present systems, the measured excitation functions had been highest than the predictions of the theoretical model code, which may focuses at these energies. However for non-alpha emitting channels in this system the measured excitation function had been nice agreement with the theoretical values. An endeavor were made to nearly the incomplete fusion fraction that designates importance of incomplete fusion process. Keywords: Alpha emitted, CF reaction, Entrance channel, Heavy ion fusion, ICF reaction, Non alpha emitted DOI : 10.7176/APTA/79-03 Publication date :September 30 th 2019","PeriodicalId":7386,"journal":{"name":"Advances in Physics Theories and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87075767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study focus on the finite difference approximation of two dimensional Poisson equation with uniform and non-uniform mesh size. The Poisson equation with uniform and non-uniform mesh size is a very powerful tool for modeling the behavior of electro-static systems, but unfortunately may not be solved analytically for very simplified models. Consequently, numerical simulation must be utilized in order to model the behavior of complex geometries with practical value. In most engineering problems are also coming from steady reaction-diffusion and heat transfer equation, in elasticity, fluid mechanics, electrostatics etc. the solution of meshing grid is non-uniform and uniform where fine grid is identified at the sensitive area of the simulation and coarse grid at the normal area.The discretization of non-uniform grid is done using Taylor expansion series. The purpose of such discretization is to transform the calculus problem to numerical form (as discrete equation). Therefore, in this study the two dimensional Poisson equation is discretazi with uniform and non-uniform mesh size using finite difference method for the comparison purpose. More over we also examine the ways that the two dimensional Poisson equation can be approximated by finite difference over non-uniform meshes, As result we obtain that for uniformly distributed gird point the finite difference method is very simple and sufficiently stable and converge to the exact solution whereas in non-uniformly distributed grid point the finite difference method is less stable, convergent and time consuming than the uniformly distributed grid points. Keywords: Finite difference method, two dimensional Poisson equations, Uniform mesh size, Non-uniform mesh size, Convergence, Stability, Consistence. DOI : 10.7176/APTA/79-01 Publication date :September 30 th 2019
{"title":"Solution of Two Dimensional Poisson Equation Using Finite Difference Method with Uniform and Non-uniform Mesh Size","authors":"Genet Mekonnen Assef","doi":"10.7176/apta/79-01","DOIUrl":"https://doi.org/10.7176/apta/79-01","url":null,"abstract":"This study focus on the finite difference approximation of two dimensional Poisson equation with uniform and non-uniform mesh size. The Poisson equation with uniform and non-uniform mesh size is a very powerful tool for modeling the behavior of electro-static systems, but unfortunately may not be solved analytically for very simplified models. Consequently, numerical simulation must be utilized in order to model the behavior of complex geometries with practical value. In most engineering problems are also coming from steady reaction-diffusion and heat transfer equation, in elasticity, fluid mechanics, electrostatics etc. the solution of meshing grid is non-uniform and uniform where fine grid is identified at the sensitive area of the simulation and coarse grid at the normal area.The discretization of non-uniform grid is done using Taylor expansion series. The purpose of such discretization is to transform the calculus problem to numerical form (as discrete equation). Therefore, in this study the two dimensional Poisson equation is discretazi with uniform and non-uniform mesh size using finite difference method for the comparison purpose. More over we also examine the ways that the two dimensional Poisson equation can be approximated by finite difference over non-uniform meshes, As result we obtain that for uniformly distributed gird point the finite difference method is very simple and sufficiently stable and converge to the exact solution whereas in non-uniformly distributed grid point the finite difference method is less stable, convergent and time consuming than the uniformly distributed grid points. Keywords: Finite difference method, two dimensional Poisson equations, Uniform mesh size, Non-uniform mesh size, Convergence, Stability, Consistence. DOI : 10.7176/APTA/79-01 Publication date :September 30 th 2019","PeriodicalId":7386,"journal":{"name":"Advances in Physics Theories and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78881113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper investigates the linear perturbation of material density of universe in f(R) modified gravity of polynomial exponential form on the scale of distance below the cosmic horizon (sub-horizon). The results show that the model for the evolution of universe is slightly different from that in the ΛCDM standard cosmological model. These can be used to show the difference of this modified gravitational model with the ΛCMD standard cosmological model and other cosmological models. We also investigate the ration of Ψ/ Φ and G eff / G N in the model and show that they are within allowable limits of experiments. Keywords: Linear perturbation; modified gravity; polynomial exponential form; material density of universe. DOI : 10.7176/APTA/78-05 Publication date :June 30 th 2019
{"title":"The Perturbation of Material Density in F(R) Modified Gravity of Polynomial Exponential Form","authors":"V. On","doi":"10.7176/apta/78-05","DOIUrl":"https://doi.org/10.7176/apta/78-05","url":null,"abstract":"This paper investigates the linear perturbation of material density of universe in f(R) modified gravity of polynomial exponential form on the scale of distance below the cosmic horizon (sub-horizon). The results show that the model for the evolution of universe is slightly different from that in the ΛCDM standard cosmological model. These can be used to show the difference of this modified gravitational model with the ΛCMD standard cosmological model and other cosmological models. We also investigate the ration of Ψ/ Φ and G eff / G N in the model and show that they are within allowable limits of experiments. Keywords: Linear perturbation; modified gravity; polynomial exponential form; material density of universe. DOI : 10.7176/APTA/78-05 Publication date :June 30 th 2019","PeriodicalId":7386,"journal":{"name":"Advances in Physics Theories and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74994063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper we have studied the statistical and squeezing proprieties of light produced by superposition of a pair of single-mode squeezed chaotic light beams. Applying density operator of single-mode squeezed chaotic state; we obtain the anti-normal order characteristics function which enables us to find the Q function. With the resulting Q function, we calculate the photon statistics and the Quadrature squeezing for single-mode squeezed chaotic light. Moreover applying Q function of single-mode squeezed chaotic state the superposed light beams would be driven. With the resulting Q function we calculated the photon statics and the quadrature squeezing for superposed light beams. To get the maximum squeezing to be 95%, for nth = 0 and r = 1.5. Keywords: squeezed chaotic state, superposed state, fluctuations DOI : 10.7176/APTA/78-03 Publication date :June 30 th 2019
本文研究了一对单模压缩混沌光束叠加产生的光的统计性质和压缩性质。应用单模压缩混沌态密度算子;我们得到了反正规阶特征函数，从而可以求出Q函数。利用得到的Q函数，我们计算了单模压缩混沌光的光子统计量和正交压缩。利用单模压缩混沌态的Q函数驱动叠加光束。利用由此得到的Q函数，我们计算了叠加光束的光子静态和正交压缩。当n = 0, r = 1.5时，最大压缩量为95%。关键词:压缩混沌态，叠加态，涨落DOI: 10.7176/APTA/78-03出版日期:2019年6月30日
{"title":"Statistical and Squeezing Proprieties of Superposed Single-Mode Squeezed Chaotic State","authors":"A. Getahun","doi":"10.7176/apta/78-03","DOIUrl":"https://doi.org/10.7176/apta/78-03","url":null,"abstract":"In this paper we have studied the statistical and squeezing proprieties of light produced by superposition of a pair of single-mode squeezed chaotic light beams. Applying density operator of single-mode squeezed chaotic state; we obtain the anti-normal order characteristics function which enables us to find the Q function. With the resulting Q function, we calculate the photon statistics and the Quadrature squeezing for single-mode squeezed chaotic light. Moreover applying Q function of single-mode squeezed chaotic state the superposed light beams would be driven. With the resulting Q function we calculated the photon statics and the quadrature squeezing for superposed light beams. To get the maximum squeezing to be 95%, for nth = 0 and r = 1.5. Keywords: squeezed chaotic state, superposed state, fluctuations DOI : 10.7176/APTA/78-03 Publication date :June 30 th 2019","PeriodicalId":7386,"journal":{"name":"Advances in Physics Theories and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89151700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We reached to an explanation for the small voltage turning out to be large one in the transistor. Our explanation is based on the repelling energy among electrons bearing the same negative charge when two currents of them n and n meet coming from the shared half between two circuits one reverse to the other forming the transistor, this shared half between the two circuits is known as the base, in n-p-n or in the other direction in the transistor as p-n-p. p and n are nothing but the negative and positive poles in one circuit, whit two circuits one is reverse to the other in direction, then no escape from the repelling meeting between two groups of electrons bearing the same negative charge. The number of the electrons has nothing to do with the small voltage turns out to be large one in the transistor, again only the meeting between two currents bearing the same negative charges where each current repel the other current strongly in the two shared circuits forming the transistor. 1- The usual explanation of the transistor as an amplifier: Let us here continue showing more explanation about the transistor as an amplifier. I her choose the clearer one I have ever found in this field. The transistor consists of two PN diodes connected back to back. It has three terminals namely emitter, base and collector. The base is the middle section which is made up of thin layer. The right part of the diode is called emitter-base diode, and the left part is called collector-base diode. The emitter based junction of the transistor is connected to forward bias and the collector- base junction is connected in reverse bias which offers a high resistance. When the emitter junction is in forward biased and the collector junction is in reverse bias , then it is said to be in the active region. Thus the transistor has two junctions which can be biased in different ways. The collector current is depend on the emitter current. This emitter current caused by the input signal contributes the collector current , which when flows through the load resistance results in a large voltage drop across it. Therefore a small input voltage results in a large output voltage showing that the transistor works as an amplifier (1) . In fact this explanation is also not enough or useful for describing the work of the transistor as an amplifier. It is well known that usually silicon is used for making the transistor because of its high voltage rating greater current and less temperature sensitivity. 2- The other explanation about the transistor as an amplifier : The transistor is nothing but electrons moving between two circles, any circle in the universe consists of two equal and opposite halves one of them is negative n, the other relative to the other circle is positive p, if there is only one circle, then the electrons in one directed current will move their normal motion between the two opposite halves n and p in the circle or the previously mentioned diode, but when anot
{"title":"Another Explanation About the Transistor as an Amplifier","authors":"S. Eid","doi":"10.7176/apta/78-04","DOIUrl":"https://doi.org/10.7176/apta/78-04","url":null,"abstract":"We reached to an explanation for the small voltage turning out to be large one in the transistor. Our explanation is based on the repelling energy among electrons bearing the same negative charge when two currents of them n and n meet coming from the shared half between two circuits one reverse to the other forming the transistor, this shared half between the two circuits is known as the base, in n-p-n or in the other direction in the transistor as p-n-p. p and n are nothing but the negative and positive poles in one circuit, whit two circuits one is reverse to the other in direction, then no escape from the repelling meeting between two groups of electrons bearing the same negative charge. The number of the electrons has nothing to do with the small voltage turns out to be large one in the transistor, again only the meeting between two currents bearing the same negative charges where each current repel the other current strongly in the two shared circuits forming the transistor. 1- The usual explanation of the transistor as an amplifier: Let us here continue showing more explanation about the transistor as an amplifier. I her choose the clearer one I have ever found in this field. The transistor consists of two PN diodes connected back to back. It has three terminals namely emitter, base and collector. The base is the middle section which is made up of thin layer. The right part of the diode is called emitter-base diode, and the left part is called collector-base diode. The emitter based junction of the transistor is connected to forward bias and the collector- base junction is connected in reverse bias which offers a high resistance. When the emitter junction is in forward biased and the collector junction is in reverse bias , then it is said to be in the active region. Thus the transistor has two junctions which can be biased in different ways. The collector current is depend on the emitter current. This emitter current caused by the input signal contributes the collector current , which when flows through the load resistance results in a large voltage drop across it. Therefore a small input voltage results in a large output voltage showing that the transistor works as an amplifier (1) . In fact this explanation is also not enough or useful for describing the work of the transistor as an amplifier. It is well known that usually silicon is used for making the transistor because of its high voltage rating greater current and less temperature sensitivity. 2- The other explanation about the transistor as an amplifier : The transistor is nothing but electrons moving between two circles, any circle in the universe consists of two equal and opposite halves one of them is negative n, the other relative to the other circle is positive p, if there is only one circle, then the electrons in one directed current will move their normal motion between the two opposite halves n and p in the circle or the previously mentioned diode, but when anot","PeriodicalId":7386,"journal":{"name":"Advances in Physics Theories and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89218598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Squeezed and entangled two-mode light can be generated by the combination of degenerate and nondegenerate parametric oscillators. The correlated signal-idler modes are not only enhance the degree of quadrature squeezing and entanglement properties of the two-mode light but they are also the cause of these properties. But the effect of signal-signal modes are to enhance the degree of quadrature squeezing and to reduce the entanglement property of the two-mode light. Keywords: signal-signal modes, signal-idler modes, quadrature squeezing, entanglement DOI : 10.7176/APTA/78-02 Publication date :June 30 th 2019
{"title":"The Effect of Signal-signal and Signal-idler Modes on Squeezing and Entanglement Properties of Two-mode Light","authors":"M. Getahun","doi":"10.7176/apta/78-02","DOIUrl":"https://doi.org/10.7176/apta/78-02","url":null,"abstract":"Squeezed and entangled two-mode light can be generated by the combination of degenerate and nondegenerate parametric oscillators. The correlated signal-idler modes are not only enhance the degree of quadrature squeezing and entanglement properties of the two-mode light but they are also the cause of these properties. But the effect of signal-signal modes are to enhance the degree of quadrature squeezing and to reduce the entanglement property of the two-mode light. Keywords: signal-signal modes, signal-idler modes, quadrature squeezing, entanglement DOI : 10.7176/APTA/78-02 Publication date :June 30 th 2019","PeriodicalId":7386,"journal":{"name":"Advances in Physics Theories and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84715769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：