Technical Physics Letters最新文献

英文中文

Increasing the Efficiency of Triple-Junction Solar Cells Due to the Metamorphic InGaAs Subcell 利用非晶态 InGaAs 子电池提高三结太阳能电池的效率

IF 0.6 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters

Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900431

M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. V. Nakhimovich, R. A. Saliy, M. Z. Shvarts, N. A. Kalyuzhniy

Abstract

The efficiency of GaInP/GaAs/In_xGa_{1 –} _xAs triple-junction solar cells obtained by replacing (in the widely used “classical” GaInP/GaAs/Ge heterostructure) the lower germanium with In_xGa_{1 –} _xAs subcell formed using the metamorphic growth technology has been investigated. Based on an original approach, the optimal indium concentration in the narrow-gap subcell has been found. The main parameters of In_xGa_{1 –} _xAs subcells with an indium concentration from x = 0.11 to 0.36 were determined and were used to calculate the IV characteristics of GaInP/GaAs/In_xGa_{1 –} _xAs solar cells. It has been determined that at x = 0.28 the efficiency of the triple-junction solar cell increases by 3.4% (abs.) in comparison with the “classical” solar cell, reaching a value of 40.3% (AM1.5D). Also it has been shown that the efficiency of such solar cells can be increased up to 41%.

摘要研究了在广泛使用的 "经典 "GaInP/GaAs/Ge 异质结构中，用非晶生长技术形成的 InxGa1 - xAs 子电池取代下层锗而获得的 GaInP/GaAs/InxGa1 - xAs 三结太阳能电池的效率。根据独创的方法，找到了窄隙子电池中的最佳铟浓度。确定了铟浓度在 x = 0.11 至 0.36 之间的 InxGa1 - xAs 子电池的主要参数，并利用这些参数计算了 GaInP/GaAs/InxGa1 - xAs 太阳能电池的 IV 特性。结果表明，当 x = 0.28 时，三结太阳能电池的效率比 "传统 "太阳能电池提高了 3.4%（绝对值），达到 40.3%（AM1.5D）。此外，研究还表明，这种太阳能电池的效率可提高到 41%。

{"title":"Increasing the Efficiency of Triple-Junction Solar Cells Due to the Metamorphic InGaAs Subcell","authors":"M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. V. Nakhimovich, R. A. Saliy, M. Z. Shvarts, N. A. Kalyuzhniy","doi":"10.1134/s1063785023900431","DOIUrl":"https://doi.org/10.1134/s1063785023900431","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000Abstract\u0000</h3>The efficiency of GaInP/GaAs/InxGa1 – xAs triple-junction solar cells obtained by replacing (in the widely used “classical” GaInP/GaAs/Ge heterostructure) the lower germanium with InxGa1 – xAs subcell formed using the metamorphic growth technology has been investigated. Based on an original approach, the optimal indium concentration in the narrow-gap subcell has been found. The main parameters of InxGa1 – xAs subcells with an indium concentration from x = 0.11 to 0.36 were determined and were used to calculate the IV characteristics of GaInP/GaAs/InxGa1 – xAs solar cells. It has been determined that at x = 0.28 the efficiency of the triple-junction solar cell increases by 3.4% (abs.) in comparison with the “classical” solar cell, reaching a value of 40.3% (AM1.5D). Also it has been shown that the efficiency of such solar cells can be increased up to 41%.","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal Conductivity of Hybrid SiC/Si Substrates for the Growth of LED Heterostructures 用于生长 LED 异质结构的混合碳化硅/硅基底的热传导率

IF 0.6 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters

Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010200

S. A. Kukushkin, L. K. Markov, A. V. Osipov, G. V. Svyatets, A. E. Chernyakov, S. I. Pavlov

Abstract

the thermal characteristics of SiC/Si samples obtained by the method of coordinated substitution of atoms at different thicknesses of SiC have been experimentally investigated. It has been found that for SiC thicknesses less than 200 nm, the thermal resistance of SiC/Si is approximately equal to 2 K/W, which is the same as for pure silicon substrate. Such samples will perfectly remove heat from the light-emitting heterostructure grown on SiC/Si. With an increase in the thickness of SiC, the SiC film is detached, which leads to a loss of thermal contact between SiC and Si. The thermal resistance increases at the same time by more than two orders of magnitude. The ability to remove easily the opaque part of the substrate can form the basis of the technology for manufacturing flip-chip LED.

摘要通过实验研究了不同厚度的碳化硅原子配位置换法获得的碳化硅/硅样品的热特性。实验发现，当碳化硅厚度小于 200 nm 时，SiC/Si 的热阻约等于 2 K/W，与纯硅衬底的热阻相同。这样的样品可以完美地去除生长在 SiC/Si 上的发光异质结构的热量。随着碳化硅厚度的增加，碳化硅薄膜会脱落，从而导致碳化硅和硅之间失去热接触。同时，热阻增加了两个数量级以上。轻松去除衬底不透明部分的能力可为制造倒装芯片 LED 的技术奠定基础。

引用次数: 0

Effect of Nitrogen Plasma Treatment on the Structural and Optical Properties of InGaN 氮等离子体处理对 InGaN 结构和光学特性的影响

IF 0.6 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters

Pub Date : 2024-03-14 DOI: 10.1134/s106378502390073x

V. O. Gridchin, I. P. Soshnikov, R. R. Reznik, S. D. Komarov, E. V. Pirogov, V. V. Lendyashova, K. P. Kotlyar, N. V. Kryzhanovskaya, G. E. Cirlin

Abstract

The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on the structural and optical properties of InGaN nanostructures is studied. It is shown that cooling of the samples without nitrogen plasma contributes to the suppression of phase separation in InGaN nanostructures. The integrated intensity of photoluminescence from these nanostructures increased by a factor of 2.

摘要研究了等离子体辅助分子束外延生长过程中的冷却条件对 InGaN 纳米结构的结构和光学特性的影响。结果表明，在不使用氮等离子体的情况下冷却样品有助于抑制 InGaN 纳米结构中的相分离。这些纳米结构的光致发光综合强度增加了 2 倍。

引用次数: 0

Investigation of the Effect of Nanosecond Laser Pulses Processing on the Microstructure and Fatigue Resistance of Commercially Pure Titanium 研究纳秒激光脉冲处理对商用纯钛微观结构和抗疲劳性的影响

IF 0.6 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters

Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900753

Yu. R. Kolobov, S. S. Manokhin, V. I. Betekhtin, A. G. Kadomtsev, M. V. Narykova, G. V. Odintsova, G. V. Khramov

Abstract

The effect has been studied of treatment with nanosecond laser pulses on the fatigue resistance of plate samples of recrystallized (grain size of the order of 2–3 pm) commercially pure titanium (grade VT1-0) under cyclic tensile loading. The results of investigations by scanning and transmission electron microscopy of the subsurface layer microstructure of the alloy under study after exposure to nanosecond laser irradiation and subsequent fatigue tests are presented.

摘要研究了在循环拉伸载荷下，纳秒激光脉冲处理对再结晶（晶粒大小约为 2-3 pm）市售纯钛（VT1-0 级）板样抗疲劳性的影响。本文介绍了通过扫描电子显微镜和透射电子显微镜对所研究的合金在受到纳秒激光辐照后的次表层微观结构以及随后的疲劳试验进行研究的结果。

引用次数: 0

NMR Study of Nanocarbon Material/Nafion Interface in a Radio Absorbing Composite 无线电吸收复合材料中纳米碳材料/非离子界面的核磁共振研究

IF 0.6 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters

Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010145

N. V. Glebova, A. S. Mazur, A. O. Krasnova, I. V. Pleshakov, A. A. Nechitailov

Abstract

inorganic-polymer composites are widely used as radio-absorbing materials, the study of their properties is important from the point of view of improving technical characteristics. The results of the study of Nafion/thermoexpanded graphite and Nafion/carbon black composites by nuclear magnetic resonance and thermogravimetry are presented. The formation of new compounds at the contact boundaries of the components, leading to thermal stabilization of the composites, is shown. Differences between thermally expanded graphite and carbon black upon interaction with Nafion are discussed.

摘要无机聚合物复合材料被广泛用作无线电吸收材料，从改进技术特性的角度来看，对其性能的研究非常重要。本文介绍了通过核磁共振和热重分析法对 Nafion/热膨胀石墨和 Nafion/炭黑复合材料进行研究的结果。结果表明，在各组分的接触边界形成了新的化合物，从而导致了复合材料的热稳定性。讨论了热膨胀石墨和炭黑与 Nafion 相互作用时的差异。

引用次数: 0

Concentration Cell Based on Electrogenic Processes in the Root Environment 基于根系环境中电生过程的浓缩池

IF 0.6 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters

Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900789

T. E. Kuleshova, G. G. Panova, N. R. Gall, A. S. Galushko

Abstract

The experimental bioelectrochemical current source based on the concentration gradient of charge carriers in the root environment of plants has been created. A potential difference of about 70 mV is observed in the nutrient solution. It is gradually decreasing due to equalization of concentrations. The voltage increases to 200 mV when plant are placed in a cultivation system as the root system develops due to the intensification of diffusion processes. The potential-forming role of nitrate forms of nitrogen is shown on the example of lettuce grown according to the panoponics technology. The separation of electrical charges by the root system during the life of plants can become an alternative source of green energy.

摘要根据植物根部环境中电荷载体的浓度梯度，创建了生物电化学电流源实验。在营养液中观察到约 70 mV 的电位差。由于浓度均衡，电位差逐渐减小。当植物被放置在栽培系统中时，由于扩散过程的加强，根系发育，电压会增加到 200 mV。硝态氮的电位形成作用以采用泛植技术种植的莴苣为例加以说明。植物生命周期中根系分离电荷的过程可以成为绿色能源的替代来源。

引用次数: 0

Quantum Noise Source Based on Shot Noise of a Balanced Photodetector with a Tunable Integrated Optical Beam Splitter 基于带有可调谐集成光束分束器的平衡光电探测器射出噪声的量子噪声源

IF 0.6 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters

Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900790

V. V. Lebedev, V. M. Petrov, I. V. Ilichev, P. M. Agruzov, A. V. Shamrai

Abstract

A broadband quantum noise source based on detection of shot noise of a balanced photodetector is demonstrated. Precise electro-optical tuning of the balanced photodetector circuit was carried out by an integrated optical beam splitter constructed in the form of the dual output Mach–Zehnder interferometer on a lithium niobate substrate. The classical component of the detected noise related to the relative intensity noise of a laser diode was suppressed by more than 15 dB. At the maximum laser power of 100 mW, the power spectral density of detected shot noise was 12 dB higher than the level of technical noise of the measuring system in the frequency band above 3 GHz.

摘要展示了一种基于平衡光电探测器射出噪声检测的宽带量子噪声源。通过在铌酸锂衬底上以双输出马赫-泽恩德干涉仪形式构建的集成光分束器，对平衡光电探测器电路进行了精确的电光调谐。检测到的噪声中与激光二极管相对强度噪声有关的经典成分被抑制了 15 分贝以上。在最大激光功率为 100 mW 时，在 3 GHz 以上频段，检测到的发射噪声的功率谱密度比测量系统的技术噪声水平高出 12 dB。

引用次数: 0

Two Types of Plasma Channel Structure in High Pressure Pulse Discharge in Cesium 铯高压脉冲放电中的两种等离子体通道结构

IF 0.6 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters

Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010091

F. G. Baksht, V. F. Lapshin

Abstract

Simulation of the pulse-periodic high pressure cesium discharge is performed on the basis of equations of radiative gas dynamics. It is shown that in the discharge it is possible to implement two different types of structure of the plasma channel. At the beginning of the current pulse, the plasma discharge channel has a centered structure. At the same time, most of the plasma is concentrated near the discharge axis. The concentration of charged particles decreases along the radius. Then, if the current amplitude is large enough, during the plasma heating process, a transformation from the centered to the shell structure of the channel occurs. In this case, most of the plasma is concentrated on the periphery of the discharge and its concentration increases along the radius from the axis to the walls of the tube. It is shown that the transition from one channel structure to another occurs at a time when the specific heat capacity of the plasma near the axis reaches a deep minimum corresponding to a completely single ionized e–i-plasma.

摘要根据辐射气体动力学方程对脉冲周期性高压铯放电进行了模拟。结果表明，在放电中可以实现两种不同类型的等离子体通道结构。在电流脉冲开始时，等离子体放电通道具有中心结构。同时，大部分等离子体集中在放电轴附近。带电粒子的浓度沿半径方向递减。然后，如果电流振幅足够大，在等离子体加热过程中，通道会从中心结构转变为壳结构。在这种情况下，大部分等离子体集中在放电的外围，其浓度沿半径从轴线到管壁逐渐增加。研究表明，从一种通道结构向另一种通道结构过渡时，轴附近等离子体的比热容达到了深度最小值，相当于完全单一的电离电子等离子体。

引用次数: 0

Nature of the Local Environment of Germany Atoms in Amorphous Films (GeTe)x(Sb2Te3) 非晶薄膜 (GeTe)x(Sb2Te3) 中德国原子局部环境的性质

IF 0.6 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters

Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900820

A. V. Marchenko, E. I. Terukov, F. S. Nasredinov, Yu. A. Petrushin, P. P. Seregin

Abstract

Using Messbauer spectroscopy on ¹¹⁹Sn impurity atoms, it was demonstrated that in amorphous (GeTe)_x(Sb₂Te₃) films (where x = 0.5, 1, 2, 3) tin atoms replace atoms of tetravalent germanium, which forms a tetrahedral system of chemical bonds with atoms in its local environment. In crystalline films, tin replaces divalent six-coordinated germanium in positions 4b of the NaCl-type crystal lattice.

摘要通过对 119Sn 杂质原子进行梅斯鲍尔光谱分析，证明在非晶态 (GeTe)x(Sb2Te3) 薄膜（x = 0.5、1、2、3）中，锡原子取代了四价锗原子，而四价锗原子与其局部环境中的原子形成了化学键四面体体系。在晶体薄膜中，锡取代了二价六配位锗，位于 NaCl 型晶格的 4b 位。

引用次数: 0

Effect of Sodium Atom Adsorption on the Electronic Structure of a Gold Film 钠原子吸附对金薄膜电子结构的影响

IF 0.6 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters

Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010121

P. A. Dementev, E. V. Dementeva, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev

Abstract

The electronic structure of a gold film deposited on W was studied during the adsorption of sodium atoms. An analysis of the photoemission spectra from the valence band and core levels of Au 4f and Na 2p upon synchrotron excitation in the photon energy range of 80–600 eV showed that Na adsorption leads to the formation of Na_xAu_y intermetallic compounds of various stoichiometry under the Na monolayer.

摘要研究了沉积在 W 上的金薄膜在吸附钠原子时的电子结构。在 80-600 eV 的光子能量范围内，通过分析同步辐射激发下 Au 4f 和 Na 2p 的价带和核级的光发射光谱，发现 Na 的吸附导致在 Na 单层下形成了不同化学计量的 NaxAuy 金属间化合物。

引用次数: 0

首页上一页

下一页尾页

类型

全部化学•材料生命科学医学物理工程技术环境•农林材料科学地球科学法学管理学化学环境科学与生态学计算机科学教育学经济学农林科学人文科学生物学数学物理与天体物理心理学综合性期刊其他工业工程理学历史学农学文学信息工程

数据库

全部 ACS Publications Elsevier ieeexplore Springer The Royal Society of Chemistry Wiley

期刊

Technical Physics Letters

全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.

﹀