Pub Date : 2024-03-13DOI: 10.1134/s1063785023900273
M. S. Ivanov, A. V. Rozhkov, P. B. Rodin
Abstract
Switching of a high-voltage GaAs diode to the conducting state in the delayed impact-ionization mode is simulated and the results are compared with experimental data. It is shown that the effect of long-term (up to 100 ns) sustaining of the conducting state of the diode after switching is due to the appearance of narrow (of the order of a micrometer) ionizing Gunn domains, the so-called collapsing domains, in the electron-hole plasma. Impact ionization in collapsing domains and in the edge (cathode and anode) domains of a strong electric field (~300 kV/cm) maintains a high concentration of nonequilibrium carriers (≥1017 cm–3) during the entire duration of the applied reverse polarity voltage pulse.
{"title":"Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes","authors":"M. S. Ivanov, A. V. Rozhkov, P. B. Rodin","doi":"10.1134/s1063785023900273","DOIUrl":"https://doi.org/10.1134/s1063785023900273","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Switching of a high-voltage GaAs diode to the conducting state in the delayed impact-ionization mode is simulated and the results are compared with experimental data. It is shown that the effect of long-term (up to 100 ns) sustaining of the conducting state of the diode after switching is due to the appearance of narrow (of the order of a micrometer) ionizing Gunn domains, the so-called collapsing domains, in the electron-hole plasma. Impact ionization in collapsing domains and in the edge (cathode and anode) domains of a strong electric field (~300 kV/cm) maintains a high concentration of nonequilibrium carriers (≥10<sup>17</sup> cm<sup>–3</sup>) during the entire duration of the applied reverse polarity voltage pulse.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-13DOI: 10.1134/s1063785023900194
A. L. Glazov, K. L. Muratikov
Abstract
A theoretical model for the formation of ultrasonic signals in metallic microcrystalline rods taking into account the metastable behavior of their defective states is proposed. The influence of metastable states of the defective structure of samples on the features of changes in their resonant frequencies in ultrasonic experiments of fast dynamics is analyzed. The decrease in Young’s modulus in such processes is explained. The correspondence between theoretical and experimental data is demonstrated for the example of resonant acoustic vibrations of rods made of aluminum alloy D16.
{"title":"Influence of Fast Dynamics Effects on Resonant Ultrasonic Vibrations of Polycrystalline Metal Rods","authors":"A. L. Glazov, K. L. Muratikov","doi":"10.1134/s1063785023900194","DOIUrl":"https://doi.org/10.1134/s1063785023900194","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A theoretical model for the formation of ultrasonic signals in metallic microcrystalline rods taking into account the metastable behavior of their defective states is proposed. The influence of metastable states of the defective structure of samples on the features of changes in their resonant frequencies in ultrasonic experiments of fast dynamics is analyzed. The decrease in Young’s modulus in such processes is explained. The correspondence between theoretical and experimental data is demonstrated for the example of resonant acoustic vibrations of rods made of aluminum alloy D16.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140883714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-13DOI: 10.1134/s1063785023900388
A. V. Malevskaya, F. Yu. Soldatenkov, R. V. Levin, N. S. Potapovich
Abstract
The investigations of Pd/Ge/Au contact system forming regimes influence on the specific contact resistivity to n-type conductivity GaAs layer were carried out. The method of samples surface treatment before the layers evaporation and thermal annealing regimes in H2, N2, and Ar atmosphere influence on contact system parameters was investigated. The specific contact resistivity value (2–3) × 10–6 Ohm cm2 at the reduced annealing temperature 190°C was archived..
摘要 研究了 Pd/Ge/Au 接触系统形成机制对 n 型导电 GaAs 层比接触电阻率的影响。研究了样品在层蒸发前的表面处理方法以及在 H2、N2 和 Ar 大气中的热退火制度对接触系统参数的影响。在降低退火温度 190°C 时，特定接触电阻率值 (2-3) × 10-6 Ohm cm2 被存档。
{"title":"Forming Regimes of Pd/Ge/Au Contact System to n-GaAs Influence on Its Electric Parameters","authors":"A. V. Malevskaya, F. Yu. Soldatenkov, R. V. Levin, N. S. Potapovich","doi":"10.1134/s1063785023900388","DOIUrl":"https://doi.org/10.1134/s1063785023900388","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The investigations of Pd/Ge/Au contact system forming regimes influence on the specific contact resistivity to <i>n</i>-type conductivity GaAs layer were carried out. The method of samples surface treatment before the layers evaporation and thermal annealing regimes in H<sub>2</sub>, N<sub>2</sub>, and Ar atmosphere influence on contact system parameters was investigated. The specific contact resistivity value (2–3) × 10<sup>–6</sup> Ohm cm<sup>2</sup> at the reduced annealing temperature 190°C was archived..</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140883727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-13DOI: 10.1134/s1063785023900169
I. M. Gadzhiev
Abstract
Picosecond optical pulses generation in a ring fiber laser with a semiconductor optical amplifier was investigated. Optical spectrum width is minimal at a fundamental resonant repetition frequency of 45 MHz, corresponding to a fiber resonator length of 4.5 m. As the frequency increases, the spectral width increases by an order of magnitude while the pulse duration decreases to 18 ps, and the power increases to 0.5 W. The power of picosecond optical pulses at the output of the semiconductor amplifier is 7 times higher than in the CW mode due to the carrier accumulation effect that occurs with short pump pulses.
{"title":"Picosecond Pulses Generation by Fiber Laser with Semiconductor Optical Amplifier in 1.06 µm Spectral Range","authors":"I. M. Gadzhiev","doi":"10.1134/s1063785023900169","DOIUrl":"https://doi.org/10.1134/s1063785023900169","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Picosecond optical pulses generation in a ring fiber laser with a semiconductor optical amplifier was investigated. Optical spectrum width is minimal at a fundamental resonant repetition frequency of 45 MHz, corresponding to a fiber resonator length of 4.5 m. As the frequency increases, the spectral width increases by an order of magnitude while the pulse duration decreases to 18 ps, and the power increases to 0.5 W. The power of picosecond optical pulses at the output of the semiconductor amplifier is 7 times higher than in the CW mode due to the carrier accumulation effect that occurs with short pump pulses.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-13DOI: 10.1134/s1063785023900376
R. V. Levin, V. N. Nevedomskiy, L. A. Sokura
Abstract
The paper presents the results of a study of factors affecting the thickness of transition (interface) layers in stressed InAs/GaSb superlattices during growth by MOCVD method. It is shown that the thicknesses of the interface layers between InAs and GaSb are practically independent of the growth temperature. The thickness of the interface layers is influenced by the direction of switching the layer growth. The smallest thickness of 1.2–1.4 nm of the interface layer InAs/GaSb was obtained for the direction of growth switching from GaSb to InAs.
{"title":"The Features of the Layers Growth in Stressed InAs/GaSb Superlattices","authors":"R. V. Levin, V. N. Nevedomskiy, L. A. Sokura","doi":"10.1134/s1063785023900376","DOIUrl":"https://doi.org/10.1134/s1063785023900376","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper presents the results of a study of factors affecting the thickness of transition (interface) layers in stressed InAs/GaSb superlattices during growth by MOCVD method. It is shown that the thicknesses of the interface layers between InAs and GaSb are practically independent of the growth temperature. The thickness of the interface layers is influenced by the direction of switching the layer growth. The smallest thickness of 1.2–1.4 nm of the interface layer InAs/GaSb was obtained for the direction of growth switching from GaSb to InAs.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140883964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-13DOI: 10.1134/s1063785023900315
A. A. Kitsay, Yu. G. Nosov, A. V. Chikiryaka, V. I. Nikolaev
Abstract
The modes of growth of Ga2O3 crystals from a solution of gallium oxide in a MoO3 melt in the process of MoO3 evaporation at a temperature of 1050°C have been studied. It is shown that at this temperature the Ga2O3 crystalline phase is in equilibrium with the MoO3 melt. As a result of the experiments, single crystals of β-Ga2O3 were obtained up to 1.5 mm in cross section. The composition and structure of the crystals were studied by X-ray diffraction and electron microscopy.
{"title":"Growth of β-Ga2O3 Single Crystals by the Solution–Melt Method","authors":"A. A. Kitsay, Yu. G. Nosov, A. V. Chikiryaka, V. I. Nikolaev","doi":"10.1134/s1063785023900315","DOIUrl":"https://doi.org/10.1134/s1063785023900315","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The modes of growth of Ga<sub>2</sub>O<sub>3</sub> crystals from a solution of gallium oxide in a MoO<sub>3</sub> melt in the process of MoO<sub>3</sub> evaporation at a temperature of 1050°C have been studied. It is shown that at this temperature the Ga<sub>2</sub>O<sub>3</sub> crystalline phase is in equilibrium with the MoO<sub>3</sub> melt. As a result of the experiments, single crystals of β-Ga<sub>2</sub>O<sub>3</sub> were obtained up to 1.5 mm in cross section. The composition and structure of the crystals were studied by X-ray diffraction and electron microscopy.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-13DOI: 10.1134/s1063785023900157
E. D. Eidelman, A. Y. Vul
Abstract
The paper proposes a modified Maxwell formula applied to the calculation of the thermal conductivity of nanofluids. It is shown that the use of elongated particles or chains of nanoparticles leads to a significant increase in thermal conductivity. Theoretical estimates based on the proposed model are in good agreement with experimental data.
{"title":"Thermal Conductivity of Nanofluids: Influence of Particle Shape","authors":"E. D. Eidelman, A. Y. Vul","doi":"10.1134/s1063785023900157","DOIUrl":"https://doi.org/10.1134/s1063785023900157","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper proposes a modified Maxwell formula applied to the calculation of the thermal conductivity of nanofluids. It is shown that the use of elongated particles or chains of nanoparticles leads to a significant increase in thermal conductivity. Theoretical estimates based on the proposed model are in good agreement with experimental data.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-13DOI: 10.1134/s1063785023900364
Yu. I. Kuzmin
Abstract
The charge transport on the electrically charged surface of polytetrafluoroethylene (PTFE) films in the presence of the adsorption of an electrically conductive phase has been studied. The attenuation of the rate of displacement of the potential drop over the film surface, which limits the area of its expansion, has been found. An estimate has been made for the critical index of the correlation length of a percolation cluster that forms on an electrified PTFE surface at high humidity. It has been experimentally established that the leak of charge from an electrically charged surface is determined by percolation processes.
{"title":"Percolative Charge Transport on Electrified Surface of Polytetrafluoroethylene","authors":"Yu. I. Kuzmin","doi":"10.1134/s1063785023900364","DOIUrl":"https://doi.org/10.1134/s1063785023900364","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The charge transport on the electrically charged surface of polytetrafluoroethylene (PTFE) films in the presence of the adsorption of an electrically conductive phase has been studied. The attenuation of the rate of displacement of the potential drop over the film surface, which limits the area of its expansion, has been found. An estimate has been made for the critical index of the correlation length of a percolation cluster that forms on an electrified PTFE surface at high humidity. It has been experimentally established that the leak of charge from an electrically charged surface is determined by percolation processes.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-13DOI: 10.1134/s1063785023900352
M. E. Kompan, A. V. Gorbatyuk, V. G. Malyshkin, V. A. Shutaev, E. A. Grebenshchikova, Yu. P. Yakovlev
Abstract
Multiple instability was found on the volt–ampere characteristic of the palladium-surface-oxidized indium phosphide structure. The effect is recorded when recording the dependence of differential conductivity and differential capacitance on the applied external voltage. A mechanism for the appearance of instabilities is proposed.
{"title":"Cascade of Impedance Instabilities of the Structure Pd-Surface-Oxidized-InP","authors":"M. E. Kompan, A. V. Gorbatyuk, V. G. Malyshkin, V. A. Shutaev, E. A. Grebenshchikova, Yu. P. Yakovlev","doi":"10.1134/s1063785023900352","DOIUrl":"https://doi.org/10.1134/s1063785023900352","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Multiple instability was found on the volt–ampere characteristic of the palladium-surface-oxidized indium phosphide structure. The effect is recorded when recording the dependence of differential conductivity and differential capacitance on the applied external voltage. A mechanism for the appearance of instabilities is proposed.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-13DOI: 10.1134/s1063785023900285
V. S. Kalinovskii, E. I. Terukov, Yu. V. Ascheulov, E. V. Kontrosh, V. S. Yuferev, K. K. Prudchenko, A. V. Chekalin, E. E. Terukova, I. A. Tolkachev, S. E. Goncharov, V. M. Ustinov
Abstract
A model of an autonomous receiving station of free space optical communication system based on a multi-section energy heterostructure (HJT) Si photoconverter and an information photodetector based on AlGaAs/GaAs p–i–n photodiodes has been developed. The energy part, when excited by laser radiation with a power of ~264 W at a wavelength of 0.974 μm in the photovoltaic mode, provided ≥60 W of electric power. The photodetector of the information channel, when excited by pulsed radiation at a wavelength of 0.78 μm, provides response time in the photovoltaic mode in the sub-nanosecond range.
摘要 基于多节能量异质结构（HJT）硅光电转换器和基于 AlGaAs/GaAs pi-n 光电二极管的信息光电探测器的自由空间光通信系统自主接收站模型已经研制成功。在光电模式下，当波长为 0.974 μm 的功率为 ~264 W 的激光辐射激发能量部分时，可提供≥60 W 的电能。信息通道的光电探测器在波长为 0.78 μm 的脉冲辐射激励下，在光电模式下的响应时间为亚纳秒级。
{"title":"Development and Study of a Model of an Autonomous Energy Information Station of Free Space Optical Communication","authors":"V. S. Kalinovskii, E. I. Terukov, Yu. V. Ascheulov, E. V. Kontrosh, V. S. Yuferev, K. K. Prudchenko, A. V. Chekalin, E. E. Terukova, I. A. Tolkachev, S. E. Goncharov, V. M. Ustinov","doi":"10.1134/s1063785023900285","DOIUrl":"https://doi.org/10.1134/s1063785023900285","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A model of an autonomous receiving station of free space optical communication system based on a multi-section energy heterostructure (HJT) Si photoconverter and an information photodetector based on AlGaAs/GaAs <i>p–i–n</i> photodiodes has been developed. The energy part, when excited by laser radiation with a power of ~264 W at a wavelength of 0.974 μm in the photovoltaic mode, provided ≥60 W of electric power. The photodetector of the information channel, when excited by pulsed radiation at a wavelength of 0.78 μm, provides response time in the photovoltaic mode in the sub-nanosecond range.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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