Pub Date : 2024-03-14DOI: 10.1134/s1063785023900601
A. K. Vershovskii, M. V. Petrenko
Abstract
A new implementation of the method of optical pumping of alkaline atoms in the scheme of a highly sensitive compact single-beam sensor of a nonzero magnetic field is proposed, which allows it to be used as part of a magnetoencephalographic complex with a remote laser pumping source. The proposed method makes it possible, in particular, to pump an array of sensors with a single source of polarization-modulated resonant radiation connected to sensors by means of polarization-supporting optical fibers. A model experiment has been carried out confirming the principle feasibility and effectiveness of the method.
{"title":"Optical Magnetometric Sensor for Magnetoencephalographic Complexes","authors":"A. K. Vershovskii, M. V. Petrenko","doi":"10.1134/s1063785023900601","DOIUrl":"https://doi.org/10.1134/s1063785023900601","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A new implementation of the method of optical pumping of alkaline atoms in the scheme of a highly sensitive compact single-beam sensor of a nonzero magnetic field is proposed, which allows it to be used as part of a magnetoencephalographic complex with a remote laser pumping source. The proposed method makes it possible, in particular, to pump an array of sensors with a single source of polarization-modulated resonant radiation connected to sensors by means of polarization-supporting optical fibers. A model experiment has been carried out confirming the principle feasibility and effectiveness of the method.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"161 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023010339
G. V. Voznyuk, I. N. Grigorenko, M. I. Mitrofanov, V. V. Nikolaev, V. P. Evtikhiev
Abstract
The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy.
{"title":"Subwave Textured Surfaces for the Radiation Coupling from the Waveguide","authors":"G. V. Voznyuk, I. N. Grigorenko, M. I. Mitrofanov, V. V. Nikolaev, V. P. Evtikhiev","doi":"10.1134/s1063785023010339","DOIUrl":"https://doi.org/10.1134/s1063785023010339","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"61 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900741
V. S. Kalinovskii, E. I. Terukov, K. K. Prudchenko, A. A. Bazeley, E. V. Kontrosh, I. A. Tolkachev, A. A. Titov
Abstract
The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5 × 1014–1 × 1015 cm–2 has been studied. Studies have shown that the smallest degradation of the “saturation” currents of the diffusion current flow mechanism from J0d ≤ 5 × 10–13 to J0d ≤ 3 × 10–12 A/cm2 and efficiency from 19.2 to 13.6% (AM0, 1367 W/m2) were n-α-Si:H/c-p(Ga)/p-α-Si:H and n-c-Si:H/c-p(Ga)/p-α-Si:H. The results obtained make it possible to evaluate the prospects for the use of heterostructure silicon solar cells for low-orbit spacecraft.
{"title":"Investigation of Radiation Resistance of Heterostructure Silicon Solar Cells","authors":"V. S. Kalinovskii, E. I. Terukov, K. K. Prudchenko, A. A. Bazeley, E. V. Kontrosh, I. A. Tolkachev, A. A. Titov","doi":"10.1134/s1063785023900741","DOIUrl":"https://doi.org/10.1134/s1063785023900741","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5 × 10<sup>14</sup>–1 × 10<sup>15</sup> cm<sup>–2</sup> has been studied. Studies have shown that the smallest degradation of the “saturation” currents of the diffusion current flow mechanism from <i>J</i><sub>0<i>d</i></sub> ≤ 5 × 10<sup>–13</sup> to <i>J</i><sub>0<i>d</i></sub> ≤ 3 × 10<sup>–12</sup> A/cm<sup>2</sup> and efficiency from 19.2 to 13.6% (AM0, 1367 W/m<sup>2</sup>) were <i>n</i>-α-Si:H/<i>c</i>-<i>p</i>(Ga)/<i>p</i>-α-Si:H and <i>n</i>-<i>c-</i>Si:H/<i>c</i>-<i>p</i>(Ga)/<i>p</i>-α-Si:H. The results obtained make it possible to evaluate the prospects for the use of heterostructure silicon solar cells for low-orbit spacecraft.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"19 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023010078
A. V. Ankudinov, M. M. Khalisov
Abstract
Consoles and bridges of MgNi2Si2O5(OH)4 nanoscrolls were tested for bending in atomic force microscope. Using test data, we analyze how the consoles or bridges were fixed, and took this information into account when calculating the Young’s modulus of the nanoscrolls. The results on the consoles are in good agreement with the results on the bridges when modeling the latter as three-span beams, and the former as beams on an elastic foundation with a suspended console.
{"title":"Bending Test of Nanoscale Consoles in Atomic Force Microscope","authors":"A. V. Ankudinov, M. M. Khalisov","doi":"10.1134/s1063785023010078","DOIUrl":"https://doi.org/10.1134/s1063785023010078","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Consoles and bridges of MgNi<sub>2</sub>Si<sub>2</sub>O<sub>5</sub>(OH)<sub>4</sub> nanoscrolls were tested for bending in atomic force microscope. Using test data, we analyze how the consoles or bridges were fixed, and took this information into account when calculating the Young’s modulus of the nanoscrolls. The results on the consoles are in good agreement with the results on the bridges when modeling the latter as three-span beams, and the former as beams on an elastic foundation with a suspended console.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"30 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900856
A. V. Osipov, Sh. Sh. Sharofidinov, A. V. Kremleva, E. V. Osipova, A. M. Smirnov, S. A. Kukushkin
Abstract
The three main crystalline modifications of Ga2O3, namely α-phase, ε-phase, and β-phase were grown on sapphire substrates using the hydride vapour phase epitaxy (HVPE) method. The temperatures of the substrates and the values of the precursor fluxes required to obtain each phase exclusively were determined. It was observed that the metastable ε-phase easily transforms into a stable β-phase during annealing. However, the metastable α-phase undergoes an intermediate amorphous phase during annealing, leading to flaking and collapse. This behavior arises from the excessively large increase in density (~10%) during the transformation from α-phase to β-phase, which results in significant elastic stresses and an increase in the height of the phase transition barrier.
{"title":"Phase Transformations in Gallium Oxide Layers","authors":"A. V. Osipov, Sh. Sh. Sharofidinov, A. V. Kremleva, E. V. Osipova, A. M. Smirnov, S. A. Kukushkin","doi":"10.1134/s1063785023900856","DOIUrl":"https://doi.org/10.1134/s1063785023900856","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The three main crystalline modifications of Ga<sub>2</sub>O<sub>3</sub>, namely α-phase, ε-phase, and β-phase were grown on sapphire substrates using the hydride vapour phase epitaxy (HVPE) method. The temperatures of the substrates and the values of the precursor fluxes required to obtain each phase exclusively were determined. It was observed that the metastable ε-phase easily transforms into a stable β-phase during annealing. However, the metastable α-phase undergoes an intermediate amorphous phase during annealing, leading to flaking and collapse. This behavior arises from the excessively large increase in density (~10%) during the transformation from α-phase to β-phase, which results in significant elastic stresses and an increase in the height of the phase transition barrier.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"76 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900819
N. A. Maleev, A. G. Kuzmenkov, M. M. Kulagina, A. P. Vasyl’ev, S. A. Blokhin, S. I. Troshkov, A. V. Nashchekin, M. A. Bobrov, A. A. Blokhin, K. O. Voropaev, V. E. Bugrov, V. M. Ustinov
Abstract
Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam epitaxy. Fabricated APDs with the sensitive area diameter of about 30 micron were passivated by SiN deposition and demonstrated avalanche breakdown voltage Vbr 70–80 V. At the applied bias of 0.9 Vbr, the dark current was 75–200 nA. The single-mode coupled APDs demonstrated responsivity at a gain of unity higher than 0.5 A/W at 1550 nm.
{"title":"Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes","authors":"N. A. Maleev, A. G. Kuzmenkov, M. M. Kulagina, A. P. Vasyl’ev, S. A. Blokhin, S. I. Troshkov, A. V. Nashchekin, M. A. Bobrov, A. A. Blokhin, K. O. Voropaev, V. E. Bugrov, V. M. Ustinov","doi":"10.1134/s1063785023900819","DOIUrl":"https://doi.org/10.1134/s1063785023900819","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam epitaxy. Fabricated APDs with the sensitive area diameter of about 30 micron were passivated by SiN deposition and demonstrated avalanche breakdown voltage <i>V</i><sub>br</sub> 70–80 V. At the applied bias of 0.9 <i>V</i><sub>br</sub>, the dark current was 75–200 nA. The single-mode coupled APDs demonstrated responsivity at a gain of unity higher than 0.5 A/W at 1550 nm.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"166 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023010261
V. Yu. Mylnikov, D. V. Chistyakov, S. H. Abdulrazak, N. G. Deryagin, Yu. M. Zadiranov, S. N. Losev, V. V. Dudelev, G. S. Sokolovskii
Abstract
We demonstrate the experimental study of the axial intensity distribution of a quasi-Bessel beam with a droplet structure of the central core, formed by an axicon with the round-tip, and the results of the theoretical calculations. We show that the period of droplet quasi-Bessel beam is determined by the shape of the surface rounding and the angle at the top of the axicon lens and depends on the distance to it. The analysis of this dependence makes it possible to restore the shape of the round-tip of the axicon without 3D scanning.
{"title":"Period of Droplet Quasi-Bessel Beam Generated with the Round-Tip Axicon","authors":"V. Yu. Mylnikov, D. V. Chistyakov, S. H. Abdulrazak, N. G. Deryagin, Yu. M. Zadiranov, S. N. Losev, V. V. Dudelev, G. S. Sokolovskii","doi":"10.1134/s1063785023010261","DOIUrl":"https://doi.org/10.1134/s1063785023010261","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We demonstrate the experimental study of the axial intensity distribution of a quasi-Bessel beam with a droplet structure of the central core, formed by an axicon with the round-tip, and the results of the theoretical calculations. We show that the period of droplet quasi-Bessel beam is determined by the shape of the surface rounding and the angle at the top of the axicon lens and depends on the distance to it. The analysis of this dependence makes it possible to restore the shape of the round-tip of the axicon without 3D scanning.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"2 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900443
E. E. Mukhin, E. P. Smirnova, N. A. Babinov, I. A. Khodunov, R. S. Smirnov, M.S. Kuligin
Abstract
Piezoelectric motors designed for operation in the ITER tokamak-reactor must be tested for stability under severe radiation conditions. Properties of lead zirconate-titanate that is the most common type of piezoelectric materials were analyzed from the point of view on influence of radiation. It is shown that, at the expected in ITER level of radiation, this piezoceramics has a good potential for resistance to radiation induced amorphization and depolarization.
{"title":"Piezoceramic Resistance to Radiation Amorphization During Operation in ITER","authors":"E. E. Mukhin, E. P. Smirnova, N. A. Babinov, I. A. Khodunov, R. S. Smirnov, M.S. Kuligin","doi":"10.1134/s1063785023900443","DOIUrl":"https://doi.org/10.1134/s1063785023900443","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Piezoelectric motors designed for operation in the ITER tokamak-reactor must be tested for stability under severe radiation conditions. Properties of lead zirconate-titanate that is the most common type of piezoelectric materials were analyzed from the point of view on influence of radiation. It is shown that, at the expected in ITER level of radiation, this piezoceramics has a good potential for resistance to radiation induced amorphization and depolarization.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"222 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900558
M. Z. Shvarts, A. V. Andreeva, D. A. Andronikov, K. V. Emtsev, V. R. Larionov, M. V. Nakhimovich, P. V. Pokrovskiy, N. A. Sadchikov, S. A. Yakovlev, D. A. Malevskiy
Abstract
The paper presents a promising solution for photovoltaic modules that provides overcoming the main conceptual limitation for the concentrator concept in photovoltaics—the impossibility to convert diffused (scattered) solar radiation coming to the panel of sunlight concentrators. The design of a hybrid concentrator-planar photovoltaic module based on heterostructure solar cells: A3B5 triple-junction and Si-HJT is presented. The results of initial outdoor studies of the module output characteristics are discussed and estimates of its energy efficiency are given.
{"title":"Hybrid Сoncentrator-Planar Photovoltaic Module with Heterostructure Solar Cells","authors":"M. Z. Shvarts, A. V. Andreeva, D. A. Andronikov, K. V. Emtsev, V. R. Larionov, M. V. Nakhimovich, P. V. Pokrovskiy, N. A. Sadchikov, S. A. Yakovlev, D. A. Malevskiy","doi":"10.1134/s1063785023900558","DOIUrl":"https://doi.org/10.1134/s1063785023900558","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper presents a promising solution for photovoltaic modules that provides overcoming the main conceptual limitation for the concentrator concept in photovoltaics—the impossibility to convert diffused (scattered) solar radiation coming to the panel of sunlight concentrators. The design of a hybrid concentrator-planar photovoltaic module based on heterostructure solar cells: A3B5 triple-junction and Si-HJT is presented. The results of initial outdoor studies of the module output characteristics are discussed and estimates of its energy efficiency are given.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"2 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.1134/s1063785023900480
A. Yu. Popov, E. Z. Gusakov
Abstract—
A quasilinear equation which allows describing evolution of the electron distribution function and generation of non-inductive currents by helicons is obtained. It is shown that in the analyzed case the Fokker–Planck equation can be approximated by a one-dimensional equation in the longitudinal electron velocity space with a diffusion coefficient proportional to the helicon power absorbed by electrons due to Landau damping.
{"title":"A 1D Quasilinear Equation Describing the Current Drive Excitation by Helicons in a Tokamak Plasma","authors":"A. Yu. Popov, E. Z. Gusakov","doi":"10.1134/s1063785023900480","DOIUrl":"https://doi.org/10.1134/s1063785023900480","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>—</h3><p>A quasilinear equation which allows describing evolution of the electron distribution function and generation of non-inductive currents by helicons is obtained. It is shown that in the analyzed case the Fokker–Planck equation can be approximated by a one-dimensional equation in the longitudinal electron velocity space with a diffusion coefficient proportional to the helicon power absorbed by electrons due to Landau damping.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"222 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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