Metal–semiconductor junctions play a critical role in solar photovoltaic cells by enabling the conversion of light into electrical energy. However, the efficiency of these devices strongly depends on optimizing the M-S interface. This study investigates the performance of the Ag/p-Cu2BaSnS4/ ITO heterostructure, focusing on the impact of annealing temperature on its structural, optical, and electrical properties. CBTS thin films were deposited via the sol–gel dip-coating method and subsequently annealed using rapid thermal processing at different temperatures ranging from 673 to 773 K for 10 min. X-ray diffraction revealed a trigonal crystal structure with a pronounced (104) preferred orientation, while Raman spectroscopy confirmed phase purity through a dominant peak at 340 cm−1. Field emission scanning electron microscopy showed a compact morphology with particle size variations influenced by annealing temperature. UV–Vis spectroscopy indicated a redshift in the absorption edge, corresponding to a bandgap reduction from 1.78 to 1.61 eV as the annealing temperature increased. Electrical characterization of the Ag/p-Cu2BaSnS4/ITO Schottky diode using current–voltage (I-V) measurements and thermionic emission theory revealed that annealing at 723 K yielded the best performance, with a rectification ratio of 800 and an ideality factor of 5.10. These parameters were further validated using the Cheung method. Impedance spectroscopy confirmed superior charge transport properties for films annealed at 723 K. Overall, the results demonstrate that the Ag/p-Cu2BaSnS4/ITO heterostructure holds strong promise for high-efficiency photovoltaic applications, with optimized annealing conditions significantly enhancing device performance.
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