Ze Yan, Quanzhi Zhang, Jianrong Zhang, Li Xi, Wenbo Sui, Desheng Xue, Dezheng Yang
Understanding the interconversion between charge current and spin current in antiferromagnetic materials is crucial for advancing antiferromagnetic spintronic devices. In this work, we utilize the second harmonic technique and the spin Hall magnetoresistance method to investigate the spin current generation in Mn3Ir/Co bilayers. The angular dependence of the second harmonic Hall voltage shows that only a y-polarized spin current is generated, which exerts spin–orbit torques on Co magnetic moments. Contrary to the positive spin Hall magnetoresistance induced by y-polarized spin current, we observe the anomalous negative spin Hall magnetoresistance in Mn3Ir/Co bilayers. By further investigating the Mn3Ir thickness dependence of the negative spin Hall magnetoresistance and spin–orbit torque, we demonstrate that the negative spin Hall magnetoresistance originates from the interconversion between charge current and spin current driven by interfacial spin–orbit coupling. Our findings provide compelling evidence for interfacial spin–orbit coupling conversion at the antiferromagnetic/ferromagnetic bilayer interface. This indicates that the interface engineering is essential for optimizing noncollinear antiferromagnetic spintronic devices.
{"title":"Negative spin Hall magnetoresistance in Mn3Ir/Co bilayers induced by interfacial spin-orbit coupling","authors":"Ze Yan, Quanzhi Zhang, Jianrong Zhang, Li Xi, Wenbo Sui, Desheng Xue, Dezheng Yang","doi":"10.1063/5.0294519","DOIUrl":"https://doi.org/10.1063/5.0294519","url":null,"abstract":"Understanding the interconversion between charge current and spin current in antiferromagnetic materials is crucial for advancing antiferromagnetic spintronic devices. In this work, we utilize the second harmonic technique and the spin Hall magnetoresistance method to investigate the spin current generation in Mn3Ir/Co bilayers. The angular dependence of the second harmonic Hall voltage shows that only a y-polarized spin current is generated, which exerts spin–orbit torques on Co magnetic moments. Contrary to the positive spin Hall magnetoresistance induced by y-polarized spin current, we observe the anomalous negative spin Hall magnetoresistance in Mn3Ir/Co bilayers. By further investigating the Mn3Ir thickness dependence of the negative spin Hall magnetoresistance and spin–orbit torque, we demonstrate that the negative spin Hall magnetoresistance originates from the interconversion between charge current and spin current driven by interfacial spin–orbit coupling. Our findings provide compelling evidence for interfacial spin–orbit coupling conversion at the antiferromagnetic/ferromagnetic bilayer interface. This indicates that the interface engineering is essential for optimizing noncollinear antiferromagnetic spintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"28 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146160129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hang Shi, Yuqian Jiang, Yuping Tian, Wenpeng Wang, Shaozhi Li, Wei-Jiang Gong, Xiangru Kong
Two-dimensional altermagnets have recently gained attention for enabling spin-polarized transport without net magnetization. The van der Waals layered form introduces an additional layer degree of freedom, allowing new ways to control spin and valley behaviors through interlayer coupling and external modulation. In our work, bilayer Nb2SeTeO shows tunable magnetic and topological properties based on first-principles calculations. The stacking configuration strongly influences its electronic structure and spin–valley characteristics. External electric fields and strain effectively modulate these properties. Compressive biaxial strain drives a transition to a quantum spin Hall phase with a high spin Chern number, while compressive uniaxial strain induces a quantum layer spin Hall effect, where chiral edge states can be switched by applying uniaxial strain in two vertical directions. These results identify bilayer Nb2SeTeO as a promising material for spintronic devices with controllable topological phases.
{"title":"Tunable quantum layer spin Hall effect in bilayer altermagnetic Nb2SeTeO","authors":"Hang Shi, Yuqian Jiang, Yuping Tian, Wenpeng Wang, Shaozhi Li, Wei-Jiang Gong, Xiangru Kong","doi":"10.1063/5.0312073","DOIUrl":"https://doi.org/10.1063/5.0312073","url":null,"abstract":"Two-dimensional altermagnets have recently gained attention for enabling spin-polarized transport without net magnetization. The van der Waals layered form introduces an additional layer degree of freedom, allowing new ways to control spin and valley behaviors through interlayer coupling and external modulation. In our work, bilayer Nb2SeTeO shows tunable magnetic and topological properties based on first-principles calculations. The stacking configuration strongly influences its electronic structure and spin–valley characteristics. External electric fields and strain effectively modulate these properties. Compressive biaxial strain drives a transition to a quantum spin Hall phase with a high spin Chern number, while compressive uniaxial strain induces a quantum layer spin Hall effect, where chiral edge states can be switched by applying uniaxial strain in two vertical directions. These results identify bilayer Nb2SeTeO as a promising material for spintronic devices with controllable topological phases.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"37 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146160566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Przemysław Przybysz, Karma Tenzin, Berkay Kilic, Witold Kozłowski, Paweł J. Kowalczyk, Paweł Dabrowski, Jagoda Sławińska
Crystal symmetries in solids give rise to spin–momentum locking, which determines how an electron's spin orientation depends on its momentum. This relationship, often referred to as spin texture, influences both charge-to-spin conversion and spin relaxation, making it one of the essential characteristics for spin–orbit-driven phenomena. Materials with strong spin–orbit coupling and broken inversion symmetry can host persistent spin textures (PSTs)—unidirectional spin configurations in momentum space, supporting efficient charge-to-spin conversion and extended spin lifetimes. Monolayer WTe2, a topological material crystallizing in a rectangular lattice, is a notable example; its symmetry enforces a canted PST, enabling the quantum spin Hall effect with the nontrivial spin orientation. Here, we use first-principles calculations to explore how these properties are modified when WTe2 is interfaced with graphene. We find that the PST is preserved by the local symmetry present in different regions of the heterostructure, while the system develops extended electron and hole pockets, resulting in semimetallic behavior. Although the bandgap closes and eliminates the quantum spin Hall phase, spin Hall effects remain robust in both conventional and unconventional geometries. The computed spin Hall conductivities are comparable to those of other two-dimensional materials, and the survival of the PST suggests the possibility of long-range spin transport even in the absence of topological edge states. In addition, the graphene layer serves as an oxidation barrier, helping protect the intrinsic properties of WTe2 and supporting the potential of this heterostructure for spintronic applications.
{"title":"Persistent spin texture protected by the approximate symmetry in a weakly interacting graphene/WTe2 heterostructure","authors":"Przemysław Przybysz, Karma Tenzin, Berkay Kilic, Witold Kozłowski, Paweł J. Kowalczyk, Paweł Dabrowski, Jagoda Sławińska","doi":"10.1063/5.0301803","DOIUrl":"https://doi.org/10.1063/5.0301803","url":null,"abstract":"Crystal symmetries in solids give rise to spin–momentum locking, which determines how an electron's spin orientation depends on its momentum. This relationship, often referred to as spin texture, influences both charge-to-spin conversion and spin relaxation, making it one of the essential characteristics for spin–orbit-driven phenomena. Materials with strong spin–orbit coupling and broken inversion symmetry can host persistent spin textures (PSTs)—unidirectional spin configurations in momentum space, supporting efficient charge-to-spin conversion and extended spin lifetimes. Monolayer WTe2, a topological material crystallizing in a rectangular lattice, is a notable example; its symmetry enforces a canted PST, enabling the quantum spin Hall effect with the nontrivial spin orientation. Here, we use first-principles calculations to explore how these properties are modified when WTe2 is interfaced with graphene. We find that the PST is preserved by the local symmetry present in different regions of the heterostructure, while the system develops extended electron and hole pockets, resulting in semimetallic behavior. Although the bandgap closes and eliminates the quantum spin Hall phase, spin Hall effects remain robust in both conventional and unconventional geometries. The computed spin Hall conductivities are comparable to those of other two-dimensional materials, and the survival of the PST suggests the possibility of long-range spin transport even in the absence of topological edge states. In addition, the graphene layer serves as an oxidation barrier, helping protect the intrinsic properties of WTe2 and supporting the potential of this heterostructure for spintronic applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"157 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146161045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Srinivasa Rao Konda, Puspendu Barik, Sushma Kumari, Subhash Singh, Venkatesh Mottamchetty, Amit Srivasthava, Vyacheslav V. Kim, Rashid A. Ganeev, Venugopal Rao Soma, Chunlei Guo, Wei Li
Engineering nonlinear optical responses in two-dimensional materials via heterostructure design is emerging as a powerful approach for next-generation photonic devices. Although perturbative nonlinear effects in these systems are well studied, their connection to nonperturbative processes such as high-harmonic generation (HHG) remains largely unexplored. Here, we investigate the HHG from few-layer MoS2 nanosheets integrated with CdSe and passivated CdSe/V2O5 quantum dots (QDs). The hybrid structures exhibit pronounced enhancement in harmonic intensity and a clear extension of the harmonic cutoff relative to pristine MoS2. We demonstrate that interfacial charge-transfer dynamics—previously associated with the dominant contribution to the third-order susceptibility χ(3)—also govern the efficiency of HHG, thereby establishing a direct link between perturbative and nonperturbative regimes in these 0D–2D hybrids. The carrier injection from the QDs increases the electron–hole population participating in HHG, while the moderated response in passivated QD systems highlights the role of interfacial potential barriers. These results provide a unified physical picture of nonlinear optical processes in hybrid nanostructures and offer design principles for enhancing coherent light generation.
{"title":"High-order harmonics generation in MoS2 nanosheets in the presence of CdSe and CdSe/V2O5 quantum dots","authors":"Srinivasa Rao Konda, Puspendu Barik, Sushma Kumari, Subhash Singh, Venkatesh Mottamchetty, Amit Srivasthava, Vyacheslav V. Kim, Rashid A. Ganeev, Venugopal Rao Soma, Chunlei Guo, Wei Li","doi":"10.1063/5.0313492","DOIUrl":"https://doi.org/10.1063/5.0313492","url":null,"abstract":"Engineering nonlinear optical responses in two-dimensional materials via heterostructure design is emerging as a powerful approach for next-generation photonic devices. Although perturbative nonlinear effects in these systems are well studied, their connection to nonperturbative processes such as high-harmonic generation (HHG) remains largely unexplored. Here, we investigate the HHG from few-layer MoS2 nanosheets integrated with CdSe and passivated CdSe/V2O5 quantum dots (QDs). The hybrid structures exhibit pronounced enhancement in harmonic intensity and a clear extension of the harmonic cutoff relative to pristine MoS2. We demonstrate that interfacial charge-transfer dynamics—previously associated with the dominant contribution to the third-order susceptibility χ(3)—also govern the efficiency of HHG, thereby establishing a direct link between perturbative and nonperturbative regimes in these 0D–2D hybrids. The carrier injection from the QDs increases the electron–hole population participating in HHG, while the moderated response in passivated QD systems highlights the role of interfacial potential barriers. These results provide a unified physical picture of nonlinear optical processes in hybrid nanostructures and offer design principles for enhancing coherent light generation.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146161115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anda Cheng, Haoxuan Yang, Lujing Wang, Changzheng Sun, Zhibiao Hao, Bing Xiong, Yanjun Han, Jian Wang, Hongtao Li, Lin Gan, Yi Luo, Lai Wang
InGaN red light-emitting diode (LED) has attracted increasing interest in recent years due to its important role in full-color micro-LED displays. Covering an AlGaN capping layer on top of a high-indium-composition InGaN quantum well can improve the performance of an InGaN red LED, which is considered to compensate for stress and suppress the decomposition of InN. However, the AlGaN capping layer can also cause changes in the polarization electric field, which have been almost overlooked in previous studies. In this work, theoretical simulations reveal that the polarization effect of the AlGaN capping layer necessitates a trade-off between the long wavelength and high luminous intensity of InGaN red LEDs, thereby yielding an optimal Al composition of 0.4. Meanwhile, experimental results demonstrate that the micro-LED with an Al composition of 0.4 in the capping layer exhibits the most uniform luminescence. The underlying reason for this optimal luminous uniformity is elucidated by stress engineering via time-of-flight secondary ion mass spectrometry characterization, which verifies the in-plane uniformity of the indium composition within the quantum wells—a feature not addressed in previous research. The 30 × 30 μm2 micro-scale light-emitting diode achieves the longest emission wavelength of ∼650 nm and the highest on-wafer external quantum efficiency of 1.8%, which further corroborates the theoretical simulation results.
{"title":"Achieving high-efficiency, long-wavelength, and high-uniformity InGaN red micro-LEDs through polarization effect and stress engineering of the AlGaN capping layer","authors":"Anda Cheng, Haoxuan Yang, Lujing Wang, Changzheng Sun, Zhibiao Hao, Bing Xiong, Yanjun Han, Jian Wang, Hongtao Li, Lin Gan, Yi Luo, Lai Wang","doi":"10.1063/5.0312640","DOIUrl":"https://doi.org/10.1063/5.0312640","url":null,"abstract":"InGaN red light-emitting diode (LED) has attracted increasing interest in recent years due to its important role in full-color micro-LED displays. Covering an AlGaN capping layer on top of a high-indium-composition InGaN quantum well can improve the performance of an InGaN red LED, which is considered to compensate for stress and suppress the decomposition of InN. However, the AlGaN capping layer can also cause changes in the polarization electric field, which have been almost overlooked in previous studies. In this work, theoretical simulations reveal that the polarization effect of the AlGaN capping layer necessitates a trade-off between the long wavelength and high luminous intensity of InGaN red LEDs, thereby yielding an optimal Al composition of 0.4. Meanwhile, experimental results demonstrate that the micro-LED with an Al composition of 0.4 in the capping layer exhibits the most uniform luminescence. The underlying reason for this optimal luminous uniformity is elucidated by stress engineering via time-of-flight secondary ion mass spectrometry characterization, which verifies the in-plane uniformity of the indium composition within the quantum wells—a feature not addressed in previous research. The 30 × 30 μm2 micro-scale light-emitting diode achieves the longest emission wavelength of ∼650 nm and the highest on-wafer external quantum efficiency of 1.8%, which further corroborates the theoretical simulation results.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"98 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146160123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Multiplex holographic acoustic lenses, composed of stacked elastic layers, offer a pathway toward practical and versatile acoustic holography. The layered architecture regularizes the surface profile for improved integration and expands operational flexibility across broad frequency ranges. However, multiple layers introduce complex inter-layer mode couplings that distort the transmitted wavefront and degrade hologram performance. We investigate these coupling mechanisms through full-field elastic wave simulations and experimental validation, showing that longitudinal resonances across layers produce spatial phase distortions that compromise field reconstruction. The conformal interface enhances acoustic coupling with soft media, broadening the design's applicability to biomedical settings. A conformal flat elastic layer is incorporated atop the multiplex structure, compensating for surface unevenness. This additionally requires identification of spurious mode interactions and thus restoring hologram fidelity. Additionally, these results provide fundamental insights into structural–acoustic interactions in layered holographic systems and establish general design principles for next-generation multifunctional acoustic lenses with applications in targeted therapy, ultrasound imaging, and noninvasive neuromodulation.
{"title":"Mode couplings in multiplex holographic acoustic lenses","authors":"Mihir Pewekar, Moustafa Sayed Ahmed, Ceren Cengiz, Shima Shahab","doi":"10.1063/5.0303044","DOIUrl":"https://doi.org/10.1063/5.0303044","url":null,"abstract":"Multiplex holographic acoustic lenses, composed of stacked elastic layers, offer a pathway toward practical and versatile acoustic holography. The layered architecture regularizes the surface profile for improved integration and expands operational flexibility across broad frequency ranges. However, multiple layers introduce complex inter-layer mode couplings that distort the transmitted wavefront and degrade hologram performance. We investigate these coupling mechanisms through full-field elastic wave simulations and experimental validation, showing that longitudinal resonances across layers produce spatial phase distortions that compromise field reconstruction. The conformal interface enhances acoustic coupling with soft media, broadening the design's applicability to biomedical settings. A conformal flat elastic layer is incorporated atop the multiplex structure, compensating for surface unevenness. This additionally requires identification of spurious mode interactions and thus restoring hologram fidelity. Additionally, these results provide fundamental insights into structural–acoustic interactions in layered holographic systems and establish general design principles for next-generation multifunctional acoustic lenses with applications in targeted therapy, ultrasound imaging, and noninvasive neuromodulation.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"121 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146161028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wonseok Lee, Rui Wang, Haotian Ye, Xiaoyang Yin, Ran Feng, Bingxuan An, Xifan Xu, Tao Wang, Fang Liu, Bowen Sheng, Zhaoying Chen, Ding Wang, Xiantong Zheng, Yi Tong, Bo Shen, Ping Wang, Xinqiang Wang
Scandium-alloyed aluminum nitride (ScAlN) has emerged as a promising ferroelectric material for next-generation electronics, optoelectronics, photonics, and acoustics due to its high remanent polarization (Pr), tunable coercive field (Ec), and compatibility with GaN, Si, and complementary metal–oxide–semiconductor technologies. However, ScAlN devices have been limited by large Ec and poor endurance. In this work, we report a Ti-assisted surface oxide layer reconstruction approach to enhance the performance of ferroelectric ScAlN. Ti/ScAlN/GaN capacitors were fabricated and subsequently annealed to promote oxygen migration from the native ScAlON into the Ti electrode, forming an insulating TiOx interfacial layer. This reconstruction reduced the polarization switching field and improved device reliability. At an optimized annealing temperature of 400 °C, the capacitors exhibited endurance up to 6 × 108 cycles with Pr exceeding 60 μC/cm2. These results demonstrate a viable strategy for improving the endurance of ferroelectric ScAlN and underscore the importance of interfacial engineering for nonvolatile memory and neuromorphic computing applications.
{"title":"Enhanced ferroelectric endurance in ScAlN by interfacial oxide reconstruction","authors":"Wonseok Lee, Rui Wang, Haotian Ye, Xiaoyang Yin, Ran Feng, Bingxuan An, Xifan Xu, Tao Wang, Fang Liu, Bowen Sheng, Zhaoying Chen, Ding Wang, Xiantong Zheng, Yi Tong, Bo Shen, Ping Wang, Xinqiang Wang","doi":"10.1063/5.0305289","DOIUrl":"https://doi.org/10.1063/5.0305289","url":null,"abstract":"Scandium-alloyed aluminum nitride (ScAlN) has emerged as a promising ferroelectric material for next-generation electronics, optoelectronics, photonics, and acoustics due to its high remanent polarization (Pr), tunable coercive field (Ec), and compatibility with GaN, Si, and complementary metal–oxide–semiconductor technologies. However, ScAlN devices have been limited by large Ec and poor endurance. In this work, we report a Ti-assisted surface oxide layer reconstruction approach to enhance the performance of ferroelectric ScAlN. Ti/ScAlN/GaN capacitors were fabricated and subsequently annealed to promote oxygen migration from the native ScAlON into the Ti electrode, forming an insulating TiOx interfacial layer. This reconstruction reduced the polarization switching field and improved device reliability. At an optimized annealing temperature of 400 °C, the capacitors exhibited endurance up to 6 × 108 cycles with Pr exceeding 60 μC/cm2. These results demonstrate a viable strategy for improving the endurance of ferroelectric ScAlN and underscore the importance of interfacial engineering for nonvolatile memory and neuromorphic computing applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"52 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146160564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The growing demand for energy-efficient artificial intelligence systems has driven the exploration of neuromorphic devices that mimic the human brain's synaptic behavior. Among various materials investigated for neuromorphic devices, two-dimensional transition metal dichalcogenides, particularly MoS2, exhibit promising properties for memristors and memtransistors due to their tunable bandgap, mechanical flexibility, and high surface activity. Although vertical conductive filament (CF) formation in MoS2-based devices has been well-documented, the mechanisms governing in-plane CF formation in MoS2 remain poorly understood, particularly in the presence of grain boundaries (GBs). In this work, we systematically investigate the role of 4|6 and 5|7 GBs in monolayer MoS2 on the in-plane formation and migration of copper-based CFs using first-principles density functional theory and molecular dynamics simulations. Our results reveal that the 4|6 GB significantly lowers the copper migration energy barrier (1.33 eV) compared to pristine (1.56 eV) and 5|7 GB-containing MoS2 (2.75 eV). Differential charge density analysis and band structure calculations confirm that GBs enhance binding affinity and modulate local electronic properties, promoting metallic behavior upon Cu incorporation. Molecular dynamics simulations under an applied electric field further reveal that Cu migration and CF formation preferentially occur along the 4|6 GB. These findings provide critical insights into defect-engineered CF modulation and highlight the potential of 4|6 GBs to enhance the performance and reliability of lateral MoS2 neuromorphic devices.
{"title":"Unveiling the role of grain boundaries in driving in-plane conductive filament formation in MoS2 neuromorphic devices","authors":"Jisheng Sun, Baolong Wang, Jianshi Sun, Renzong Wang, Abid Ullah, Yifan Liu, Daojie Hu, Yuge Deng, Yucheng Xiong, Peng Gu, Ge Chen, Xiangjun Liu","doi":"10.1063/5.0302223","DOIUrl":"https://doi.org/10.1063/5.0302223","url":null,"abstract":"The growing demand for energy-efficient artificial intelligence systems has driven the exploration of neuromorphic devices that mimic the human brain's synaptic behavior. Among various materials investigated for neuromorphic devices, two-dimensional transition metal dichalcogenides, particularly MoS2, exhibit promising properties for memristors and memtransistors due to their tunable bandgap, mechanical flexibility, and high surface activity. Although vertical conductive filament (CF) formation in MoS2-based devices has been well-documented, the mechanisms governing in-plane CF formation in MoS2 remain poorly understood, particularly in the presence of grain boundaries (GBs). In this work, we systematically investigate the role of 4|6 and 5|7 GBs in monolayer MoS2 on the in-plane formation and migration of copper-based CFs using first-principles density functional theory and molecular dynamics simulations. Our results reveal that the 4|6 GB significantly lowers the copper migration energy barrier (1.33 eV) compared to pristine (1.56 eV) and 5|7 GB-containing MoS2 (2.75 eV). Differential charge density analysis and band structure calculations confirm that GBs enhance binding affinity and modulate local electronic properties, promoting metallic behavior upon Cu incorporation. Molecular dynamics simulations under an applied electric field further reveal that Cu migration and CF formation preferentially occur along the 4|6 GB. These findings provide critical insights into defect-engineered CF modulation and highlight the potential of 4|6 GBs to enhance the performance and reliability of lateral MoS2 neuromorphic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"98 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146160567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aaron D. Gilmour, Jameel Sardharwalla, Stuart T. Fraser, Xuege Feng, Sophia C. Franklin, Clara T. H. Tran, Marcela M. M. Bilek
The growth and study of living cells outside their native organisms forms the foundation of modern biology and underpin medicine. It has led to the identification of stem cells and the development of methods that can reprogram mature cells into pluripotent states, creating enormous potential for new therapies that can cure previously untreatable conditions and enable the repair of patient-specific tissues and organs. Accessing these advances, however, will require the development of sophisticated new cell culture materials and technologies. This Perspective article reviews the development of cell culture and current cell culture capabilities, with particular attention to the influence of spatial and temporal factors. We discuss traditional 2D culture, the complexities of 3D systems, and the emergence of 2.5D approaches as an alternative to high throughput 2D systems. Untapped potential and barriers to progress are identified while the new materials and technologies needed to drive the field forward are discussed.
{"title":"Plasma processes for the creation of customizable bio-instructive surfaces and interfaces","authors":"Aaron D. Gilmour, Jameel Sardharwalla, Stuart T. Fraser, Xuege Feng, Sophia C. Franklin, Clara T. H. Tran, Marcela M. M. Bilek","doi":"10.1063/5.0301610","DOIUrl":"https://doi.org/10.1063/5.0301610","url":null,"abstract":"The growth and study of living cells outside their native organisms forms the foundation of modern biology and underpin medicine. It has led to the identification of stem cells and the development of methods that can reprogram mature cells into pluripotent states, creating enormous potential for new therapies that can cure previously untreatable conditions and enable the repair of patient-specific tissues and organs. Accessing these advances, however, will require the development of sophisticated new cell culture materials and technologies. This Perspective article reviews the development of cell culture and current cell culture capabilities, with particular attention to the influence of spatial and temporal factors. We discuss traditional 2D culture, the complexities of 3D systems, and the emergence of 2.5D approaches as an alternative to high throughput 2D systems. Untapped potential and barriers to progress are identified while the new materials and technologies needed to drive the field forward are discussed.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"398 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Peng-Lei Wang, Yi-Bo Peng, Kai-Li Lin, Zhe-Han Jiang, Baile Chen, Shiyu Hu, Wenxiang Huang, Cheng Wang
Interband cascade lasers (ICLs) are energy-efficient mid-infrared light sources that are grown either on the GaSb substrate or on the InAs substrate. While the dynamical characteristics of GaSb-based ICLs have been well explored, those of InAs-based ICLs have not been revealed yet. This work unveils the linewidth broadening factor (LBF) properties and the relative intensity noise (RIN) characteristics of InAs-based ICLs emitting around 4.6 μm, which produce a continuous wave at room temperature. It is found that the LBF of the InAs-based ICLs is about 1.5, which is smaller than that of GaSb-based ICLs, owing to the higher thermal conductivity and the larger optical confinement factor. The RIN of the InAs-based ICLs reaches below −150 dB/Hz at high pump currents, which is comparable to those of GaSb-based ones.
{"title":"Linewidth broadening factor and relative intensity noise of interband cascade lasers grown on InAs substrate","authors":"Peng-Lei Wang, Yi-Bo Peng, Kai-Li Lin, Zhe-Han Jiang, Baile Chen, Shiyu Hu, Wenxiang Huang, Cheng Wang","doi":"10.1063/5.0304825","DOIUrl":"https://doi.org/10.1063/5.0304825","url":null,"abstract":"Interband cascade lasers (ICLs) are energy-efficient mid-infrared light sources that are grown either on the GaSb substrate or on the InAs substrate. While the dynamical characteristics of GaSb-based ICLs have been well explored, those of InAs-based ICLs have not been revealed yet. This work unveils the linewidth broadening factor (LBF) properties and the relative intensity noise (RIN) characteristics of InAs-based ICLs emitting around 4.6 μm, which produce a continuous wave at room temperature. It is found that the LBF of the InAs-based ICLs is about 1.5, which is smaller than that of GaSb-based ICLs, owing to the higher thermal conductivity and the larger optical confinement factor. The RIN of the InAs-based ICLs reaches below −150 dB/Hz at high pump currents, which is comparable to those of GaSb-based ones.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"59 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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