Shuai Huang, Junfan Hua, Kunpeng Su, Lin Yang, Haiou Wang, Canglong Li
Using purely electrical methods to manipulate magnetic property poses a significant obstacle in the development of advanced information technology. Multiferroic materials, distinguished by their magnetoelectric (ME) effect, offer a promising way to overcome this challenge by enabling the electric control of magnetic ordering or magnetization. Here, we have synthesized Cu3Mo2O9 single crystals and investigated the anisotropic ME effect within the quasi-one-dimensional spin system. The simultaneous occurrence of ferroelectric (FE) polarization and dielectric anomaly at the Néel temperature (TN) of ∼7.9 K suggests the presence of spin-driven FE property in Cu3Mo2O9. The phase transition temperatures undergo a shift toward lower values for H//c and remain constant for H//a and H//b, indicating anisotropic ME effect. The ME effect demonstrates nonlinear behavior as the magnetic field increases. Near a critical point (T = 7 K and μ0H = 5.6 T), a giant magnetodielectric coupling parameter reaching 374% is observed for H//c, which can be ascribed to the strong spin–phonon coupling and the magnetic field induced change of FE polarization. In the context of charge redistribution without magnetic superlattice, the FE property is analyzed. Moreover, remarkable magnetic control of FE polarization and electric control of magnetization are obtained. The temporal evolution of both polarization and magnetization indicates the stable ME mutual control, suggesting potential applications of Cu3Mo2O9 as a promising multiferroic material.
使用纯粹的电学方法来操纵磁性，对先进信息技术的发展构成了重大障碍。多铁性材料以其磁电效应（ME）而著称，通过对磁有序化或磁化的电控制，为克服这一挑战提供了一种前景广阔的方法。在此，我们合成了 Cu3Mo2O9 单晶，并研究了准一维自旋体系中的各向异性 ME 效应。在奈尔温度（TN）∼7.9 K 时，铁电（FE）极化和介电异常同时出现，这表明 Cu3Mo2O9 中存在自旋驱动的 FE 特性。相变温度在 H//c 时向较低值移动，而在 H//a 和 H//b 时保持不变，这表明存在各向异性的 ME 效应。随着磁场的增加，ME效应表现出非线性行为。在临界点附近（T = 7 K，μ0H = 5.6 T），H//c 的磁电耦合参数达到了 374%，这可归因于强自旋-声子耦合和磁场诱导的 FE 极化变化。在没有磁性超晶格的电荷再分布背景下，对 FE 特性进行了分析。此外，还获得了对 FE 极化的显著磁控制和对磁化的电控制。极化和磁化的时间演化表明了稳定的 ME 相互控制，这表明 Cu3Mo2O9 作为一种有前途的多铁性材料具有潜在的应用前景。
{"title":"Anisotropic magnetoelectric effect in quasi-one-dimensional antiferromagnet Cu3Mo2O9","authors":"Shuai Huang, Junfan Hua, Kunpeng Su, Lin Yang, Haiou Wang, Canglong Li","doi":"10.1063/5.0243143","DOIUrl":"https://doi.org/10.1063/5.0243143","url":null,"abstract":"Using purely electrical methods to manipulate magnetic property poses a significant obstacle in the development of advanced information technology. Multiferroic materials, distinguished by their magnetoelectric (ME) effect, offer a promising way to overcome this challenge by enabling the electric control of magnetic ordering or magnetization. Here, we have synthesized Cu3Mo2O9 single crystals and investigated the anisotropic ME effect within the quasi-one-dimensional spin system. The simultaneous occurrence of ferroelectric (FE) polarization and dielectric anomaly at the Néel temperature (TN) of ∼7.9 K suggests the presence of spin-driven FE property in Cu3Mo2O9. The phase transition temperatures undergo a shift toward lower values for H//c and remain constant for H//a and H//b, indicating anisotropic ME effect. The ME effect demonstrates nonlinear behavior as the magnetic field increases. Near a critical point (T = 7 K and μ0H = 5.6 T), a giant magnetodielectric coupling parameter reaching 374% is observed for H//c, which can be ascribed to the strong spin–phonon coupling and the magnetic field induced change of FE polarization. In the context of charge redistribution without magnetic superlattice, the FE property is analyzed. Moreover, remarkable magnetic control of FE polarization and electric control of magnetization are obtained. The temporal evolution of both polarization and magnetization indicates the stable ME mutual control, suggesting potential applications of Cu3Mo2O9 as a promising multiferroic material.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md Tanvir Hasan, Jiangnan Liu, Ding Wang, Shubham Mondal, Md Mehedi Hasan Tanim, Samuel Yang, Zetian Mi
We have studied the operation of the ScAlN/GaN high-electron mobility transistor (HEMT) at high temperatures up to 700 K (423 °C). A maximum drain current density of ∼2 A/mm and an on-resistance of ∼1.5 Ω·mm was measured at room temperature (RT). The epi-structure exhibited a very high two-dimensional electron gas (2DEG) density of 6 × 1013 cm−2 at RT using Hall measurement. The Sc0.15Al0.85N barrier, nearly lattice matched to the GaN channel, showed a drain current reduction of ∼50% at 700 K. The decrease in 2DEG mobility, which leads to an increase in sheet resistance, is mostly responsible for this reduction in drain current. However, an excellent electrostatic control was achieved at 700 K with the drain current value exceeding 1 A/mm, which is 2 times higher compared to that of AlGaN/GaN HEMTs reported previously. These results indicate that ScAlN/GaN HEMTs are a promising candidate for high-temperature and high-power electronic applications.
{"title":"Effect of temperature on the performance of ScAlN/GaN high-electron mobility transistor","authors":"Md Tanvir Hasan, Jiangnan Liu, Ding Wang, Shubham Mondal, Md Mehedi Hasan Tanim, Samuel Yang, Zetian Mi","doi":"10.1063/5.0239643","DOIUrl":"https://doi.org/10.1063/5.0239643","url":null,"abstract":"We have studied the operation of the ScAlN/GaN high-electron mobility transistor (HEMT) at high temperatures up to 700 K (423 °C). A maximum drain current density of ∼2 A/mm and an on-resistance of ∼1.5 Ω·mm was measured at room temperature (RT). The epi-structure exhibited a very high two-dimensional electron gas (2DEG) density of 6 × 1013 cm−2 at RT using Hall measurement. The Sc0.15Al0.85N barrier, nearly lattice matched to the GaN channel, showed a drain current reduction of ∼50% at 700 K. The decrease in 2DEG mobility, which leads to an increase in sheet resistance, is mostly responsible for this reduction in drain current. However, an excellent electrostatic control was achieved at 700 K with the drain current value exceeding 1 A/mm, which is 2 times higher compared to that of AlGaN/GaN HEMTs reported previously. These results indicate that ScAlN/GaN HEMTs are a promising candidate for high-temperature and high-power electronic applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"39 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Predicting chaotic systems is crucial for understanding complex behaviors, yet challenging due to their sensitivity to initial conditions and inherent unpredictability. Probabilistic reservoir computing (RC) is well suited for long-term chaotic predictions by handling complex dynamic systems. Spin–orbit torque (SOT) devices in spintronics, with their nonlinear and probabilistic operations, can enhance performance in these tasks. This study proposes an RC system utilizing SOT devices for predicting chaotic dynamics. By simulating the reservoir in an RC network with SOT devices that achieve nonlinear resistance changes with random distribution, we enhance the robustness for the predictive capability of the model. The RC network predicted the behaviors of the Mackey–Glass and Lorenz chaotic systems, demonstrating that stochastic SOT devices significantly improve long-term prediction accuracy.
预测混沌系统对于理解复杂行为至关重要，但由于其对初始条件的敏感性和固有的不可预测性，预测具有挑战性。概率储层计算 (RC) 非常适合通过处理复杂的动态系统来进行长期混沌预测。自旋电子学中的自旋轨道力矩（SOT）器件具有非线性和概率操作特性，可以提高这些任务的性能。本研究提出了一种利用 SOT 器件预测混沌动态的 RC 系统。通过在一个带有 SOT 器件的 RC 网络中模拟水库，实现随机分布的非线性电阻变化，我们增强了模型预测能力的稳健性。该 RC 网络预测了 Mackey-Glass 和 Lorenz 混沌系统的行为，证明随机 SOT 装置可显著提高长期预测的准确性。
{"title":"Improved long-term prediction of chaos using reservoir computing based on stochastic spin–orbit torque devices","authors":"Cen Wang, Xinyao Lei, Kaiming Cai, Xu Ge, Xiaofei Yang, Yue Zhang","doi":"10.1063/5.0231863","DOIUrl":"https://doi.org/10.1063/5.0231863","url":null,"abstract":"Predicting chaotic systems is crucial for understanding complex behaviors, yet challenging due to their sensitivity to initial conditions and inherent unpredictability. Probabilistic reservoir computing (RC) is well suited for long-term chaotic predictions by handling complex dynamic systems. Spin–orbit torque (SOT) devices in spintronics, with their nonlinear and probabilistic operations, can enhance performance in these tasks. This study proposes an RC system utilizing SOT devices for predicting chaotic dynamics. By simulating the reservoir in an RC network with SOT devices that achieve nonlinear resistance changes with random distribution, we enhance the robustness for the predictive capability of the model. The RC network predicted the behaviors of the Mackey–Glass and Lorenz chaotic systems, demonstrating that stochastic SOT devices significantly improve long-term prediction accuracy.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"56 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xian-Song Zhao, Chao Yu, Chong Wang, Tianyi Li, Bo Liu, Hai Lu, Rong Zhang, Xiankang Dou, Jun Zhang, Jian-Wei Pan
Differential absorption Lidar (DIAL) in the ultraviolet (UV) region is an effective approach for monitoring tropospheric ozone. 4H-SiC single-photon detectors (SPDs) are emergent devices for UV single-photon detection. Here, we demonstrate a 4H-SiC SPD-based ozone DIAL. We design and fabricate the 4H-SiC single-photon avalanche diode with a beveled mesa structure and optimized layer thickness. An active quenching circuit with a quenching time of 1.03 ns is developed to significantly mitigate the afterpulsing effect while enhancing the maximum count rate. After characterization, the SPD exhibits excellent performance with a photon detection efficiency of 16.6% at 266 nm, a dark count rate of 138 kcps, a maximum count rate of 13 Mcps, and an afterpulse probability of 2.7% at room temperature. Then, we apply two 4H-SiC SPDs in an ozone DIAL. The measured ozone concentrations at altitudes of 1–3.5 km agree well with the results of a commercial ozone DIAL. Our work provides an alternative solution for general UV Lidar applications.
{"title":"Differential absorption ozone Lidar with 4H-SiC single-photon detectors","authors":"Xian-Song Zhao, Chao Yu, Chong Wang, Tianyi Li, Bo Liu, Hai Lu, Rong Zhang, Xiankang Dou, Jun Zhang, Jian-Wei Pan","doi":"10.1063/5.0232210","DOIUrl":"https://doi.org/10.1063/5.0232210","url":null,"abstract":"Differential absorption Lidar (DIAL) in the ultraviolet (UV) region is an effective approach for monitoring tropospheric ozone. 4H-SiC single-photon detectors (SPDs) are emergent devices for UV single-photon detection. Here, we demonstrate a 4H-SiC SPD-based ozone DIAL. We design and fabricate the 4H-SiC single-photon avalanche diode with a beveled mesa structure and optimized layer thickness. An active quenching circuit with a quenching time of 1.03 ns is developed to significantly mitigate the afterpulsing effect while enhancing the maximum count rate. After characterization, the SPD exhibits excellent performance with a photon detection efficiency of 16.6% at 266 nm, a dark count rate of 138 kcps, a maximum count rate of 13 Mcps, and an afterpulse probability of 2.7% at room temperature. Then, we apply two 4H-SiC SPDs in an ozone DIAL. The measured ozone concentrations at altitudes of 1–3.5 km agree well with the results of a commercial ozone DIAL. Our work provides an alternative solution for general UV Lidar applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"64 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Smart actuators convert environmental changes into mechanical energy. However, the actuation performance and robustness of smart actuators are limited by the weak interlaminar force and poor adhesion between layers. Herein, we report moisture-responsive actuators integrated with slippery liquid-infused porous surfaces (SLIPSs). The difference in adsorption capacity of water molecules further increases because the SLIPS layer is isolated from air by the lubricating oil film. Compared with the initial (graphene oxide/candle soot, GO/CS) bilayer film, the integrated SLIPS layer improved the bending performance by 12.6% and shortened the response–recovery time by one-third. Moreover, the GO/SLIPS actuator exhibited excellent long-term stability over 10 000 cycles due to the lubricating oil's capillary fluidity. In addition, a moisture-controlled water-transport device based on a GO/SLIPS film was demonstrated.
{"title":"Slippery liquid-infused porous surfaces for high-performance moisture-responsive actuators","authors":"Zhao-Di Chen, Qiang Wang, Hao Zhou, Xi-Lin Li, Tian-Tai Zhang, Dong-Dong Han, Yong-Lai Zhang","doi":"10.1063/5.0233616","DOIUrl":"https://doi.org/10.1063/5.0233616","url":null,"abstract":"Smart actuators convert environmental changes into mechanical energy. However, the actuation performance and robustness of smart actuators are limited by the weak interlaminar force and poor adhesion between layers. Herein, we report moisture-responsive actuators integrated with slippery liquid-infused porous surfaces (SLIPSs). The difference in adsorption capacity of water molecules further increases because the SLIPS layer is isolated from air by the lubricating oil film. Compared with the initial (graphene oxide/candle soot, GO/CS) bilayer film, the integrated SLIPS layer improved the bending performance by 12.6% and shortened the response–recovery time by one-third. Moreover, the GO/SLIPS actuator exhibited excellent long-term stability over 10 000 cycles due to the lubricating oil's capillary fluidity. In addition, a moisture-controlled water-transport device based on a GO/SLIPS film was demonstrated.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Feixuan Huang, Mingye Du, Chen Ma, Xi He, Feiya Suo, Jiawei Li, Tao Wu, Nan Wang
In this paper, a high-frequency lamb wave resonator (LWR) with near zero temperature coefficient of frequency (TCF) is designed, fabricated, and measured. The reported resonator is of a bi-layer structure consisting of lithium niobate (LiNbO3 or LN) and silicon dioxide (SiO2), and lithographically patterned aluminum (Al) inter-digitated electrode fingers on top of the bi-layer structure. By adjusting the thickness ratio of LN and SiO2 layers, both the electromechanical coupling (k2) and the TCF, including both TCF at resonant frequency (TCFr) and TCF at anti-resonant frequency (TCFa), of the thickness shear (TS) type LWR are optimized. Experimental results, which are in excellent agreement with theoretical analysis, show that the fabricated 11.6-GHz LWR achieves a k2 of 12.2%, with TCFr and TCFa being −4.2 and −5.4 ppm/K over a temperature range from 30 °C to 85 °C, respectively, demonstrating huge potential in applications for future wireless communication systems above 10 GHz.
{"title":"Near-zero TCF 11.6-GHz lamb wave resonator based on 128°Y-cut LiNbO3","authors":"Feixuan Huang, Mingye Du, Chen Ma, Xi He, Feiya Suo, Jiawei Li, Tao Wu, Nan Wang","doi":"10.1063/5.0233718","DOIUrl":"https://doi.org/10.1063/5.0233718","url":null,"abstract":"In this paper, a high-frequency lamb wave resonator (LWR) with near zero temperature coefficient of frequency (TCF) is designed, fabricated, and measured. The reported resonator is of a bi-layer structure consisting of lithium niobate (LiNbO3 or LN) and silicon dioxide (SiO2), and lithographically patterned aluminum (Al) inter-digitated electrode fingers on top of the bi-layer structure. By adjusting the thickness ratio of LN and SiO2 layers, both the electromechanical coupling (k2) and the TCF, including both TCF at resonant frequency (TCFr) and TCF at anti-resonant frequency (TCFa), of the thickness shear (TS) type LWR are optimized. Experimental results, which are in excellent agreement with theoretical analysis, show that the fabricated 11.6-GHz LWR achieves a k2 of 12.2%, with TCFr and TCFa being −4.2 and −5.4 ppm/K over a temperature range from 30 °C to 85 °C, respectively, demonstrating huge potential in applications for future wireless communication systems above 10 GHz.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"64 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Strongly coupled exciton-polaritons can be observed in a wide variety of systems and exhibit remarkable properties due to their small mass, compared to that of electrons, and their bosonic nature. This allows to study quantum condensates and can be exploited for photonic integrated circuits. For the latter one, the small propagation length of the polaritons in microcavities often comprises a limiting factor. By using evanescent guided modes as the photonic component instead of cavity photons, the polaritons inherit longer lifetimes. In this work, we report on the observation of propagating polaritons, consisting of interacting Bloch surface waves and excitons in ZnO, at room temperature and find energy dependent propagation lengths of up to 100 μm. These results open the path to applying Bloch polaritons in on-chip polaritonic devices requiring macroscopic propagation at or above room temperature.
{"title":"Long-range propagation of Bloch surface wave polaritons in ZnO","authors":"S. Henn, A. Müller, M. Grundmann, C. Sturm","doi":"10.1063/5.0233279","DOIUrl":"https://doi.org/10.1063/5.0233279","url":null,"abstract":"Strongly coupled exciton-polaritons can be observed in a wide variety of systems and exhibit remarkable properties due to their small mass, compared to that of electrons, and their bosonic nature. This allows to study quantum condensates and can be exploited for photonic integrated circuits. For the latter one, the small propagation length of the polaritons in microcavities often comprises a limiting factor. By using evanescent guided modes as the photonic component instead of cavity photons, the polaritons inherit longer lifetimes. In this work, we report on the observation of propagating polaritons, consisting of interacting Bloch surface waves and excitons in ZnO, at room temperature and find energy dependent propagation lengths of up to 100 μm. These results open the path to applying Bloch polaritons in on-chip polaritonic devices requiring macroscopic propagation at or above room temperature.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ze-Hua Cao, Xi Wang, Rong-Jiang Zhu, Zi-Yang Liu, Ming Xu, Hao Tong, Qiang He, Xiang-Shui Miao
As one of the most promising candidates for next-generation nonvolatile memory, phase change memory is still facing the problem of high power consumption required to reset the device. The melt-quench process during amorphization leads to thermal crosstalk between devices as well. In this work, a paired pulses (P.P.) RESET operation scheme has been demonstrated to reduce the maximum temperature during the amorphization process, which in turn significantly reduces the power consumption. Experiments show that both the minimum RESET programming voltage and power consumption have decreased by up to 0.4 V and 60%, respectively. This proposed programming strategy is promising to optimize the device endurance and stability without sacrificing operating speed.
作为下一代非易失性存储器最有前途的候选产品之一，相变存储器仍然面临着复位器件所需的高能耗问题。非晶化过程中的熔淬工艺还会导致器件之间的热串扰。在这项工作中，我们展示了一种成对脉冲（P.P. ）RESET 操作方案，它可以降低非晶化过程中的最高温度，从而显著降低功耗。实验表明，最小 RESET 编程电压和功耗分别降低了 0.4 V 和 60%。这种拟议的编程策略有望在不牺牲运行速度的情况下优化器件的耐用性和稳定性。
{"title":"Up to 60% energy saving for GST-based confined phase change memory using paired pulses RESET operation scheme","authors":"Ze-Hua Cao, Xi Wang, Rong-Jiang Zhu, Zi-Yang Liu, Ming Xu, Hao Tong, Qiang He, Xiang-Shui Miao","doi":"10.1063/5.0234139","DOIUrl":"https://doi.org/10.1063/5.0234139","url":null,"abstract":"As one of the most promising candidates for next-generation nonvolatile memory, phase change memory is still facing the problem of high power consumption required to reset the device. The melt-quench process during amorphization leads to thermal crosstalk between devices as well. In this work, a paired pulses (P.P.) RESET operation scheme has been demonstrated to reduce the maximum temperature during the amorphization process, which in turn significantly reduces the power consumption. Experiments show that both the minimum RESET programming voltage and power consumption have decreased by up to 0.4 V and 60%, respectively. This proposed programming strategy is promising to optimize the device endurance and stability without sacrificing operating speed.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Understanding the fundamental link between structure and functionalization is crucial for designing and optimizing functional materials, since different structural configurations could trigger materials to demonstrate diverse physical and chemical properties. However, the correlation between crystal structure and thermal conductivity (κ) remains unclear. In this study, taking two-dimensional (2D) carbon allotropes Janus-graphene and graphene as study cases, we utilize phonon Boltzmann transport equation combined with machine learning potential to thoroughly investigate the complex folding structure of pure sp2 hybridized Janus-graphene from the perspective of crystal structure, phonon modal resolved thermal transport, and atomic interactions, with the goal of identifying the underlying relationship between 2D geometry and κ. The results reveal that the folded structure in Janus-graphene causes strong symmetry breaking, significantly reduces phonon group velocities, increases phonon–phonon scattering, and ultimately leads to low κ. These findings enhance our understanding of how atomic structure folding affects thermal transport and the relationship between structure and functionalization.
{"title":"Revealing the correlation between asymmetric structure and low thermal conductivity in Janus-graphene via machine learning force constant potential","authors":"Linfeng Yu, Kexin Dong, Qi Yang, Yi Zhang, Xiong Zheng, Huimin Wang, Zhenzhen Qin, Guangzhao Qin","doi":"10.1063/5.0237434","DOIUrl":"https://doi.org/10.1063/5.0237434","url":null,"abstract":"Understanding the fundamental link between structure and functionalization is crucial for designing and optimizing functional materials, since different structural configurations could trigger materials to demonstrate diverse physical and chemical properties. However, the correlation between crystal structure and thermal conductivity (κ) remains unclear. In this study, taking two-dimensional (2D) carbon allotropes Janus-graphene and graphene as study cases, we utilize phonon Boltzmann transport equation combined with machine learning potential to thoroughly investigate the complex folding structure of pure sp2 hybridized Janus-graphene from the perspective of crystal structure, phonon modal resolved thermal transport, and atomic interactions, with the goal of identifying the underlying relationship between 2D geometry and κ. The results reveal that the folded structure in Janus-graphene causes strong symmetry breaking, significantly reduces phonon group velocities, increases phonon–phonon scattering, and ultimately leads to low κ. These findings enhance our understanding of how atomic structure folding affects thermal transport and the relationship between structure and functionalization.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"76 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142665461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Winda Purwitasari, Ali Sufyan, Rovi Angelo B. Villaos, Zhi-Quan Huang, Arun Bansil, Hsin Lin, Feng-Chuan Chuang
Owing to their unique topologically protected gapless boundary states, topological insulators (TIs) are attracting substantial interest in spintronics and quantum computing. Here, we discuss the structural, electronic, and topological properties of bulk alkaline earth di-pnictides AX2 (where A= Ca, Sr, or Ba and X= As, Sb, or Bi) using first-principles calculations under the hybrid functional approach. Our structural analysis based on phonon dispersion and molecular dynamics calculations establishes the thermodynamic stability of these materials and indicates their potential for synthesis. All investigated compounds are shown to host nontrivial phases upon including spin–orbit coupling. CaAs2, SrSb2, and BaSb2 are found to be strong TIs with sizable bandgaps of up to 213 meV. Nontrivial topology in the case of SrSb2 was further confirmed through surface state computations which showed the presence of gapless surface states. In addition, we demonstrate that using the hybrid functional approach can enhance the accuracy of the calculations to predict experimental findings. Finally, our study suggests that the alkaline earth di-pnictide family would provide a promising materials platform for developing applications of TIs.
{"title":"Topological insulating phase in nonsymmorphic bulk AX2 (A = Ca, Sr, or Ba; and X = As, Sb, or Bi) compounds","authors":"Winda Purwitasari, Ali Sufyan, Rovi Angelo B. Villaos, Zhi-Quan Huang, Arun Bansil, Hsin Lin, Feng-Chuan Chuang","doi":"10.1063/5.0237667","DOIUrl":"https://doi.org/10.1063/5.0237667","url":null,"abstract":"Owing to their unique topologically protected gapless boundary states, topological insulators (TIs) are attracting substantial interest in spintronics and quantum computing. Here, we discuss the structural, electronic, and topological properties of bulk alkaline earth di-pnictides AX2 (where A= Ca, Sr, or Ba and X= As, Sb, or Bi) using first-principles calculations under the hybrid functional approach. Our structural analysis based on phonon dispersion and molecular dynamics calculations establishes the thermodynamic stability of these materials and indicates their potential for synthesis. All investigated compounds are shown to host nontrivial phases upon including spin–orbit coupling. CaAs2, SrSb2, and BaSb2 are found to be strong TIs with sizable bandgaps of up to 213 meV. Nontrivial topology in the case of SrSb2 was further confirmed through surface state computations which showed the presence of gapless surface states. In addition, we demonstrate that using the hybrid functional approach can enhance the accuracy of the calculations to predict experimental findings. Finally, our study suggests that the alkaline earth di-pnictide family would provide a promising materials platform for developing applications of TIs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"80 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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