In this work, electric field-modulated AlGaN/GaN Schottky barrier diodes (SBDs) with an AlN back barrier layer and a thin GaN channel layer are demonstrated. Benefiting from the built-in electric field (EB) induced via the positively polarized charge at the AlGaN/GaN interface and the negatively polarized charge at the GaN/AlN interface, the composite electric field in the GaN channel is effectively suppressed, when the diodes are reverse-biased. Compared to traditional GaN buffer SBDs, the breakdown voltage of AlGaN/GaN SBDs with AlN back barrier layer increases from −585 to −1122 V while the power figure-of-merit increases from 215 to 777 MW/cm2.
{"title":"Electric field-modulated AlGaN/GaN Schottky barrier diode with high breakdown voltage via polarized charge around thin GaN channel","authors":"Tao Zhang, Junjie Yu, Heyuan Chen, Yachao Zhang, Shengrui Xu, Xiangdong Li, Huake Su, Jiahao Chen, Hongchang Tao, Yue Hao, Jincheng Zhang","doi":"10.1063/5.0296318","DOIUrl":"https://doi.org/10.1063/5.0296318","url":null,"abstract":"In this work, electric field-modulated AlGaN/GaN Schottky barrier diodes (SBDs) with an AlN back barrier layer and a thin GaN channel layer are demonstrated. Benefiting from the built-in electric field (EB) induced via the positively polarized charge at the AlGaN/GaN interface and the negatively polarized charge at the GaN/AlN interface, the composite electric field in the GaN channel is effectively suppressed, when the diodes are reverse-biased. Compared to traditional GaN buffer SBDs, the breakdown voltage of AlGaN/GaN SBDs with AlN back barrier layer increases from −585 to −1122 V while the power figure-of-merit increases from 215 to 777 MW/cm2.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"226 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhang Ruixian, Sho Kagami, Daiki Ito, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Son Le, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano, Pham Nam Hai
Perpendicular magnetic tunnel junctions (p-MTJs) with perpendicular magnetic anisotropy (PMA) are key devices for scaling magnetoresistance random access memories down to ∼10 nm. However, the magnetic anisotropy field Hk of the intensively studied CoFeB/MgO is still about 4–6 kOe for bottom CoFeB, and the corresponding magnetic anisotropy energy coefficient Keff is about 3 × 106–5 × 106 erg cm−3. In this study, we aim to realize a giant PMA in Mo (2 nm)/Co19Fe56B25 (tCoFeB)/MgAl2O4 (4 nm)/Ta (1 nm) stack. By using the Boron-rich Co19Fe56B25 layer in combination with the Boron-blocking Mo underlayer and the spinel MgAl2O4 oxide layer, we can realize giant PMA in CoFeB with Hk as high as 17.5–19.5 kOe and Keff as high as 6.9 × 106–9.4 × 106 erg cm−3. Auger electron spectroscopy depth profiles reveal that the good balance between the Boron-blocking Mo layer and the Boron-sink MgAl2O4 layer results in about 20% of the original Boron remaining in CoFeB, leading to a small magnetization and giant PMA. Our results pave the way for further scaling of MTJs and improved resistance against thermal and external magnetic field disturbance.
{"title":"Giant perpendicular magnetic anisotropy in Mo/Boron-rich CoFeB/MgAl2O4 structure","authors":"Zhang Ruixian, Sho Kagami, Daiki Ito, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Son Le, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano, Pham Nam Hai","doi":"10.1063/5.0301346","DOIUrl":"https://doi.org/10.1063/5.0301346","url":null,"abstract":"Perpendicular magnetic tunnel junctions (p-MTJs) with perpendicular magnetic anisotropy (PMA) are key devices for scaling magnetoresistance random access memories down to ∼10 nm. However, the magnetic anisotropy field Hk of the intensively studied CoFeB/MgO is still about 4–6 kOe for bottom CoFeB, and the corresponding magnetic anisotropy energy coefficient Keff is about 3 × 106–5 × 106 erg cm−3. In this study, we aim to realize a giant PMA in Mo (2 nm)/Co19Fe56B25 (tCoFeB)/MgAl2O4 (4 nm)/Ta (1 nm) stack. By using the Boron-rich Co19Fe56B25 layer in combination with the Boron-blocking Mo underlayer and the spinel MgAl2O4 oxide layer, we can realize giant PMA in CoFeB with Hk as high as 17.5–19.5 kOe and Keff as high as 6.9 × 106–9.4 × 106 erg cm−3. Auger electron spectroscopy depth profiles reveal that the good balance between the Boron-blocking Mo layer and the Boron-sink MgAl2O4 layer results in about 20% of the original Boron remaining in CoFeB, leading to a small magnetization and giant PMA. Our results pave the way for further scaling of MTJs and improved resistance against thermal and external magnetic field disturbance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tuning the gapless and isotropic Dirac electron behavior in graphene remains an active research pursuit. Recently, a study revealed that the on-surface synthesis of zigzag graphene nanoribbons embedded with porphyrins laterally fused along the ribbon backbone opens exciting opportunities for creating hybrid graphene nanostructures in which the electronic properties can be precisely tuned [Xiang et al., Nat. Chem. 17, 1356 (2025)]. Inspired by this progress, herein, we propose a band engineering scheme involving the fusion of exotic molecules, rather than pure atoms or carbon-based molecules, into the graphene lattice, as exemplified by embedding diborane molecules along the armchair or zigzag direction in graphene (named diBEG-AN or diBEG-ZN). First-principles calculations reveal that diBEG-A1 is a direct bandgap semiconductor. Additionally, a bandgap oscillation emerges in other diBEG-ANs, following the rule N = 3,5,7 + 6n (where n is an integer). The combination of a broad intrinsic and strain-tunable direct bandgap window, light charge carriers, optical dichroism, and dipole-allowed optical transitions makes diBEG-ANs highly promising for optoelectronic and direction-dependent device applications. Strained diBEG-A5/A7 and diBEG-ZNs (N > 1) are Dirac semimetals (DSs) that exhibit tunable anisotropic phases, including the highly tilted type-I, type-II, and semi-DS states. Tight-binding analysis suggests that the diverse electronic properties of diBEGs primarily originate from the reformulation of orbital interactions near the diborane units. The engineering strategy proposed herein and the outcomes demonstrated hereby are poised to provide an alternative angle for graphene-related applications and the underlying physics.
{"title":"Tuning the electronic properties of graphene via embedding diborane molecules","authors":"Chengyong Zhong, Zhengran Li, Junjie Ma","doi":"10.1063/5.0304052","DOIUrl":"https://doi.org/10.1063/5.0304052","url":null,"abstract":"Tuning the gapless and isotropic Dirac electron behavior in graphene remains an active research pursuit. Recently, a study revealed that the on-surface synthesis of zigzag graphene nanoribbons embedded with porphyrins laterally fused along the ribbon backbone opens exciting opportunities for creating hybrid graphene nanostructures in which the electronic properties can be precisely tuned [Xiang et al., Nat. Chem. 17, 1356 (2025)]. Inspired by this progress, herein, we propose a band engineering scheme involving the fusion of exotic molecules, rather than pure atoms or carbon-based molecules, into the graphene lattice, as exemplified by embedding diborane molecules along the armchair or zigzag direction in graphene (named diBEG-AN or diBEG-ZN). First-principles calculations reveal that diBEG-A1 is a direct bandgap semiconductor. Additionally, a bandgap oscillation emerges in other diBEG-ANs, following the rule N = 3,5,7 + 6n (where n is an integer). The combination of a broad intrinsic and strain-tunable direct bandgap window, light charge carriers, optical dichroism, and dipole-allowed optical transitions makes diBEG-ANs highly promising for optoelectronic and direction-dependent device applications. Strained diBEG-A5/A7 and diBEG-ZNs (N > 1) are Dirac semimetals (DSs) that exhibit tunable anisotropic phases, including the highly tilted type-I, type-II, and semi-DS states. Tight-binding analysis suggests that the diverse electronic properties of diBEGs primarily originate from the reformulation of orbital interactions near the diborane units. The engineering strategy proposed herein and the outcomes demonstrated hereby are poised to provide an alternative angle for graphene-related applications and the underlying physics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tenglong Xu, Xiaozhen Li, Long Xu, Chunguang Wang, Xiaobing Cai
Advances in metamaterials, additive manufacturing, and computational design have enabled significant progress in airborne sound absorption. However, most absorbers still rely on two conventional mechanisms, i.e., friction-induced viscous loss and pressure-fluctuation-induced thermal loss, leaving their thickness constrained by the Rozanov bound. Here, we investigate an acoustic metamaterial based on a single three-dimensional Hilbert curve, designed to achieve sound absorption beyond this theoretical limit. The Hilbert curve forms continuous, tightly spaced winding channels whose geometry enables laminar flow-like shear dissipation. Experimental, numerical, and theoretical results demonstrate that with an optimal slit width close to the viscous boundary layer thickness, the actual thickness can be approximately 86% of the calculated Rozanov bound. This finding suggests a dissipation mechanism distinct from classical porous and resonator-based absorbers, opening different avenues for ultra-thin broadband sound absorbers.
{"title":"Laminar-flow-based sound absorption with a single Hilbert curve surpassing the Rozanov bound","authors":"Tenglong Xu, Xiaozhen Li, Long Xu, Chunguang Wang, Xiaobing Cai","doi":"10.1063/5.0297558","DOIUrl":"https://doi.org/10.1063/5.0297558","url":null,"abstract":"Advances in metamaterials, additive manufacturing, and computational design have enabled significant progress in airborne sound absorption. However, most absorbers still rely on two conventional mechanisms, i.e., friction-induced viscous loss and pressure-fluctuation-induced thermal loss, leaving their thickness constrained by the Rozanov bound. Here, we investigate an acoustic metamaterial based on a single three-dimensional Hilbert curve, designed to achieve sound absorption beyond this theoretical limit. The Hilbert curve forms continuous, tightly spaced winding channels whose geometry enables laminar flow-like shear dissipation. Experimental, numerical, and theoretical results demonstrate that with an optimal slit width close to the viscous boundary layer thickness, the actual thickness can be approximately 86% of the calculated Rozanov bound. This finding suggests a dissipation mechanism distinct from classical porous and resonator-based absorbers, opening different avenues for ultra-thin broadband sound absorbers.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"170 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
To overcome the limitations of low responsivity (R) and suboptimal spectral selectivity inherent in silicon (Si)-based solar-blind ultraviolet (SBUV) photodetectors (PDs), as well as the challenges posed by the low electron mobility and polycrystalline structure of heteroepitaxial β gallium oxide (β-Ga2O3), a high-electron-mobility PD utilizing a β-Ga2O3/Si heterojunction is developed. In this PD, β-Ga2O3 serves as the SBUV absorption layer, capitalizing on its high responsivity and spectral selectivity, while Si acts as the photogenerated electron transport layer, leveraging its superior crystalline quality and electron mobility to form a complementary system. The resulting PD achieves a remarkable R of 6.67 × 105 A/W and an external quantum efficiency of 3.25 × 108%, coupled with exceptional spectral selectivity. This study provides valuable guidance for SBUV applications of both Si and β-Ga2O3.
为了克服硅（Si）基太阳盲紫外（SBUV）光电探测器（PD）固有的低响应率(R)和次优光谱选择性的局限性，以及异质外延β氧化镓（β- ga2o3）的低电子迁移率和多晶结构带来的挑战，开发了一种利用β- ga2o3 /Si异质结的高电子迁移率PD。在该PD中，β-Ga2O3作为SBUV吸收层，利用其高响应率和光谱选择性，而Si作为光生电子传输层，利用其优越的晶体质量和电子迁移率形成互补体系。所得到的PD达到了6.67 × 105 a /W的显着R和3.25 × 108%的外量子效率，并具有出色的光谱选择性。该研究为Si和β-Ga2O3的SBUV应用提供了有价值的指导。
{"title":"Ultrahigh-efficiency solar-blind ultraviolet detection with a β -Ga2O3/Si heterojunction","authors":"Zeming Li, Rensheng Shen, Teng Jiao, Yuchun Chang, Hongwei Liang, Xiaochuan Xia, Baolin Zhang","doi":"10.1063/5.0306137","DOIUrl":"https://doi.org/10.1063/5.0306137","url":null,"abstract":"To overcome the limitations of low responsivity (R) and suboptimal spectral selectivity inherent in silicon (Si)-based solar-blind ultraviolet (SBUV) photodetectors (PDs), as well as the challenges posed by the low electron mobility and polycrystalline structure of heteroepitaxial β gallium oxide (β-Ga2O3), a high-electron-mobility PD utilizing a β-Ga2O3/Si heterojunction is developed. In this PD, β-Ga2O3 serves as the SBUV absorption layer, capitalizing on its high responsivity and spectral selectivity, while Si acts as the photogenerated electron transport layer, leveraging its superior crystalline quality and electron mobility to form a complementary system. The resulting PD achieves a remarkable R of 6.67 × 105 A/W and an external quantum efficiency of 3.25 × 108%, coupled with exceptional spectral selectivity. This study provides valuable guidance for SBUV applications of both Si and β-Ga2O3.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"45 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An electroforming-free and self-compliance flexible organic memristor has been developed using an organic–organic bilayer interface. A phase-separated 6,13-bis(triisopropylsilylethynyl)pentacene (TP): poly(3-hexylthiophene-2,5-diyl) (P3HT) bilayer sandwiched between silver and copper electrode patterned in the form of a crossbar mounted on a polyvinyl alcohol substrate served as the organic memristor. The switching behavior and memory characteristics of the device are found to be affected by blending ratios of TP and P3HT. At the blending ratio of 3:1, the resistive switching device exhibited a memristive behavior with a high ON/OFF ratio (>103), prolonged data retention (>105 s), and a low switching voltage (<±1 V). In contrast, the 1:1 blend configuration yields a write-once-read-many memory with an ON/OFF ratio of ∼105. Interfacial dipole orientation and π–π stacked transport are demonstrated to govern resistive switching in these phase-separated bilayer organic memristors. Along with low power consumption, the crossbar architecture and flexibility of the device make it a promising candidate for energy-efficient in-memory computing.
{"title":"Dipole modulated switching in an energy-efficient flexible organic bilayer memristor","authors":"Nikhitha Rajan, Samayun Saikh, Ayash Kanto Mukherjee","doi":"10.1063/5.0284378","DOIUrl":"https://doi.org/10.1063/5.0284378","url":null,"abstract":"An electroforming-free and self-compliance flexible organic memristor has been developed using an organic–organic bilayer interface. A phase-separated 6,13-bis(triisopropylsilylethynyl)pentacene (TP): poly(3-hexylthiophene-2,5-diyl) (P3HT) bilayer sandwiched between silver and copper electrode patterned in the form of a crossbar mounted on a polyvinyl alcohol substrate served as the organic memristor. The switching behavior and memory characteristics of the device are found to be affected by blending ratios of TP and P3HT. At the blending ratio of 3:1, the resistive switching device exhibited a memristive behavior with a high ON/OFF ratio (&gt;103), prolonged data retention (&gt;105 s), and a low switching voltage (&lt;±1 V). In contrast, the 1:1 blend configuration yields a write-once-read-many memory with an ON/OFF ratio of ∼105. Interfacial dipole orientation and π–π stacked transport are demonstrated to govern resistive switching in these phase-separated bilayer organic memristors. Along with low power consumption, the crossbar architecture and flexibility of the device make it a promising candidate for energy-efficient in-memory computing.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"10 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High-entropy (HE) materials, renowned for their exceptional chemical and physical properties, have attracted growing interest due to their broad applications across various fields. In this work, we report the synthesis of a compound, (Al0.196Sc0.196In0.196Yb0.196Y0.196)2Mo3O12:0.04Er3+ (HEMO), designed via a high-entropy solid solution strategy based on the A2Mo3O12 framework. The crystal structure, microstructure, elemental valence states, and thermal expansion properties of HEMO were systematically investigated using variable temperature synchrotron X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy. HEMO exhibits negative thermal expansion (NTE) in the temperature range of 300–1000 K due to coupled polyhedral rotations. Under 980 nm excitation, its upconversion luminescence (UCL) shows remarkable negative thermal quenching (NTQ), with a 53.4-fold increase in intensity between 300 and 650 K. Based on the fluorescence intensity ratio technique, it shows a max relative sensitivity (Sr) of 0.84% K−1 (300 K) at 300–650 K. This work not only reports a high-entropy NTE phosphor but also opens an avenue for exploring UCL phosphors with NTQ luminescence.
{"title":"High-entropy negative thermal expansion oxide with thermally enhanced upconversion luminescence","authors":"Xin Chen, Wenshen Fan, Xiangkai Hao, Yongjie Wang, Li Li, Yuanbing Mao, Shogo Kawaguchi, Qilong Gao","doi":"10.1063/5.0306792","DOIUrl":"https://doi.org/10.1063/5.0306792","url":null,"abstract":"High-entropy (HE) materials, renowned for their exceptional chemical and physical properties, have attracted growing interest due to their broad applications across various fields. In this work, we report the synthesis of a compound, (Al0.196Sc0.196In0.196Yb0.196Y0.196)2Mo3O12:0.04Er3+ (HEMO), designed via a high-entropy solid solution strategy based on the A2Mo3O12 framework. The crystal structure, microstructure, elemental valence states, and thermal expansion properties of HEMO were systematically investigated using variable temperature synchrotron X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy. HEMO exhibits negative thermal expansion (NTE) in the temperature range of 300–1000 K due to coupled polyhedral rotations. Under 980 nm excitation, its upconversion luminescence (UCL) shows remarkable negative thermal quenching (NTQ), with a 53.4-fold increase in intensity between 300 and 650 K. Based on the fluorescence intensity ratio technique, it shows a max relative sensitivity (Sr) of 0.84% K−1 (300 K) at 300–650 K. This work not only reports a high-entropy NTE phosphor but also opens an avenue for exploring UCL phosphors with NTQ luminescence.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"144 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anni Hu, Li Shen, Jingying Peng, Rui Li, Ye Chen, Haiou Wang, Chao Cao, Yu Liu, Lin Yang
We report the synthesis of 1T-Fe0.4Ta0.6Se2 single crystal along with its magnetic and transport properties. Magnetic susceptibility and magnetization measurements reveal anisotropic behavior with no long-range magnetic order down to 1.8 K. Low-temperature transport measurements exhibit a three-dimensional variable-range hopping regime, indicative of the localization of electronic states at the Fermi level. These observations shed light on the complex physical properties of the 1T-TaX2 (X = S, Se) family, especially the electronic properties tuned by 3d element doping for potential applications.
{"title":"Anderson localization of electrons in high Fe-doped transition metal dichalcogenide 1T-Fe0.4Ta0.6Se2 single crystals","authors":"Anni Hu, Li Shen, Jingying Peng, Rui Li, Ye Chen, Haiou Wang, Chao Cao, Yu Liu, Lin Yang","doi":"10.1063/5.0291288","DOIUrl":"https://doi.org/10.1063/5.0291288","url":null,"abstract":"We report the synthesis of 1T-Fe0.4Ta0.6Se2 single crystal along with its magnetic and transport properties. Magnetic susceptibility and magnetization measurements reveal anisotropic behavior with no long-range magnetic order down to 1.8 K. Low-temperature transport measurements exhibit a three-dimensional variable-range hopping regime, indicative of the localization of electronic states at the Fermi level. These observations shed light on the complex physical properties of the 1T-TaX2 (X = S, Se) family, especially the electronic properties tuned by 3d element doping for potential applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Localized surface plasmon resonance (LSPR) in discrete nanoparticle monolayers is difficult to control because disorder and aggregation obscure the link between microscale coupling and macroscopic spectra. We demonstrate that surface coverage (SC) and incidence angle (θ) provide a coordinated control under total internal reflection. A compact finite element method and an effective-medium theory framework, supported by a dipole-oscillator picture, predict that tightening gaps strengthens dipole–dipole coupling, redshifts, deepens the resonance, and increases intensity sensitivity (SI) until multipolar modes emerge and reduce SI. Increasing θ reconditions the evanescent field and shifts the SC threshold for strong coupling to higher values. Using pH-responsive self-assembly to tune SC from 8.07% to 23.62% and a prism-based angle-resolved setup under unpolarized illumination, we experimentally verify a nonmonotonic SI and a θ-dependent right-shift of the optimum. These results provide actionable design rules and a scalable route to high-sensitivity, self-assembled LSPR sensors.
{"title":"Plasmonic coupling driven spectral and sensitivity evolution in TIR-excited discrete AuNP arrays","authors":"Ming Lin, Mengdi Lu, Xinya Zhao, Yuzhang Liang, Yueying Hu, Wei Peng","doi":"10.1063/5.0293797","DOIUrl":"https://doi.org/10.1063/5.0293797","url":null,"abstract":"Localized surface plasmon resonance (LSPR) in discrete nanoparticle monolayers is difficult to control because disorder and aggregation obscure the link between microscale coupling and macroscopic spectra. We demonstrate that surface coverage (SC) and incidence angle (θ) provide a coordinated control under total internal reflection. A compact finite element method and an effective-medium theory framework, supported by a dipole-oscillator picture, predict that tightening gaps strengthens dipole–dipole coupling, redshifts, deepens the resonance, and increases intensity sensitivity (SI) until multipolar modes emerge and reduce SI. Increasing θ reconditions the evanescent field and shifts the SC threshold for strong coupling to higher values. Using pH-responsive self-assembly to tune SC from 8.07% to 23.62% and a prism-based angle-resolved setup under unpolarized illumination, we experimentally verify a nonmonotonic SI and a θ-dependent right-shift of the optimum. These results provide actionable design rules and a scalable route to high-sensitivity, self-assembled LSPR sensors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"366 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kiera Downey, Weiping Li, Mary E. Dickenson, Rhima M. Coleman, Aaron H. Morris, Timothy L. Hall, Cheri X. Deng
Resonant acoustic rheometry (RAR) is a contactless technique for measuring viscoelasticity of soft materials based on the resonant surface waves generated on a sample surface using a dual-mode ultrasound technique. This study reports the development and validation of a portable RAR system for enabling rapid, co-localized, and simultaneous viscoelastic and acoustic characterization of multiple soft material samples. Our results reveal strong correlation of RAR measurements of Young's modulus and viscosity in polyethylene glycol hydrogels with the storage and loss modulus measured using a dynamic mechanical analysis instrument. In addition, RAR measurements of Young's modulus and viscosity exhibited positive correlation with the speed of sound and acoustic attenuation measured during RAR. These results expand the utility of RAR as an integrated tool for acoustic-mechanical characterization of soft viscoelastic materials.
{"title":"Portable resonant acoustic rheometry system enables rapid and integrated acoustic-mechanical characterization of soft biomaterials","authors":"Kiera Downey, Weiping Li, Mary E. Dickenson, Rhima M. Coleman, Aaron H. Morris, Timothy L. Hall, Cheri X. Deng","doi":"10.1063/5.0289258","DOIUrl":"https://doi.org/10.1063/5.0289258","url":null,"abstract":"Resonant acoustic rheometry (RAR) is a contactless technique for measuring viscoelasticity of soft materials based on the resonant surface waves generated on a sample surface using a dual-mode ultrasound technique. This study reports the development and validation of a portable RAR system for enabling rapid, co-localized, and simultaneous viscoelastic and acoustic characterization of multiple soft material samples. Our results reveal strong correlation of RAR measurements of Young's modulus and viscosity in polyethylene glycol hydrogels with the storage and loss modulus measured using a dynamic mechanical analysis instrument. In addition, RAR measurements of Young's modulus and viscosity exhibited positive correlation with the speed of sound and acoustic attenuation measured during RAR. These results expand the utility of RAR as an integrated tool for acoustic-mechanical characterization of soft viscoelastic materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"93 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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