The development of ceramic capacitors that deliver excellent recoverable energy density (Wrec) and high efficiency (η) has been attracting significant attention recently due to the growing need in electronic industry. Herein, a relaxor ferroelectric ceramic with a tetragonal tungsten bronze structure is designed based on Sr0.6Ba0.4Nb2O6, which simultaneously shows a notable Wrec of 5.1 J/cm3 and an excellent η of 89.4% under 500 kV/cm after incorporating 10 mol. % perovskite end-member Bi(Zn0.5Ti0.5)O3. This is attributed to the reduced grain size, enhanced dielectric relaxation characteristics, and emergence of a superparaelectric phase with weakly coupled polar nanoregions. Furthermore, this ceramic sample also exhibits excellent frequency and thermal stability, exceptional fatigue endurance, and good charging–discharging behaviors. This study supplies an attractive candidate with a tungsten bronze structure for advanced capacitive energy-storage applications.
{"title":"Simultaneous enhancement in energy storage density and efficiency in (Sr,Ba)Nb2O6-based relaxor ferroelectric ceramics","authors":"Shijie Yin, Yuxuan Dai, Pengzhen Wang, Huajie Luo, Shuhao Wang, Ji Zhang, Shan-Tao Zhang","doi":"10.1063/5.0308662","DOIUrl":"https://doi.org/10.1063/5.0308662","url":null,"abstract":"The development of ceramic capacitors that deliver excellent recoverable energy density (Wrec) and high efficiency (η) has been attracting significant attention recently due to the growing need in electronic industry. Herein, a relaxor ferroelectric ceramic with a tetragonal tungsten bronze structure is designed based on Sr0.6Ba0.4Nb2O6, which simultaneously shows a notable Wrec of 5.1 J/cm3 and an excellent η of 89.4% under 500 kV/cm after incorporating 10 mol. % perovskite end-member Bi(Zn0.5Ti0.5)O3. This is attributed to the reduced grain size, enhanced dielectric relaxation characteristics, and emergence of a superparaelectric phase with weakly coupled polar nanoregions. Furthermore, this ceramic sample also exhibits excellent frequency and thermal stability, exceptional fatigue endurance, and good charging–discharging behaviors. This study supplies an attractive candidate with a tungsten bronze structure for advanced capacitive energy-storage applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"6 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We present a straightforward yet versatile method for fabricating voltage-tunable two-dimensional liquid crystal (LC) gratings that exhibit high diffraction efficiency and polarization independence. This technique employs capillary-assisted self-assembly of 5 μm silica microspheres on an indium tin oxide-coated glass substrate, resulting in a highly ordered hexagonal structure without requiring intricate lithography or templating processes. The self-assembled microsphere array effectively modulates the alignment of the LC, enabling tunable diffraction in response to applied voltages. Experimental findings demonstrate a first-order diffraction efficiency of 2.76% at 0 V, which decreases to 1.86% at 5 V and stabilizes at 2.41% at 15 V. Notably, the grating exhibits polarization-independent diffraction within the voltage range of 3–4 V. This approach significantly streamlines the fabrication process while delivering strong performance, paving the way for developing next-generation tunable LC optical devices.
{"title":"Capillary-assisted self-assembly of glass microspheres for simple and versatile fabrication of voltage-tunable two-dimensional liquid crystal gratings","authors":"Bau-Jy Liang, Sheng-Chun Hung, Chia-Hung Hsia","doi":"10.1063/5.0269600","DOIUrl":"https://doi.org/10.1063/5.0269600","url":null,"abstract":"We present a straightforward yet versatile method for fabricating voltage-tunable two-dimensional liquid crystal (LC) gratings that exhibit high diffraction efficiency and polarization independence. This technique employs capillary-assisted self-assembly of 5 μm silica microspheres on an indium tin oxide-coated glass substrate, resulting in a highly ordered hexagonal structure without requiring intricate lithography or templating processes. The self-assembled microsphere array effectively modulates the alignment of the LC, enabling tunable diffraction in response to applied voltages. Experimental findings demonstrate a first-order diffraction efficiency of 2.76% at 0 V, which decreases to 1.86% at 5 V and stabilizes at 2.41% at 15 V. Notably, the grating exhibits polarization-independent diffraction within the voltage range of 3–4 V. This approach significantly streamlines the fabrication process while delivering strong performance, paving the way for developing next-generation tunable LC optical devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"21 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhenghao Duan, Shi Zong, Lei Xu, Zhengdao Xie, Wencheng Niu, Pengcheng Zeng, Lei Liao, Xingqiang Liu
Oxide thin-film transistors (TFTs) suffer from negative bias illumination stress (NBIS) instability, which severely limits their application in flat panel displays. In this study, an ultrathin Y2O3 layer is deposited on top of a 6-nm-thick indium tin yttrium oxide channel layer using an in situ sputtering process. This modification to the back-channel layer demonstrates remarkable improvement in stability. The passivated devices exhibit a high field-effect mobility of 49.7 cm2/V s, an outstanding current on/off ratio of 107, and a threshold voltage (VTH) of −0.9 V. Moreover, the VTH shift under NBIS is significantly reduced from −9.9 to −2.8 V. The passivated devices demonstrating excellent stability can be attributed to the dense Y2O3 layer, which effectively prevents the influence of moisture and oxygen from the ambient environment. And the diffusion of yttrium ions from the Y2O3 layer into the channel layer passivates defects within the channel. This work provides a promising pathway for high-performance oxide TFTs.
{"title":"In situ interface engineering enabled high-performance InSnO thin-film transistor incorporating ultrathin Y2O3 layer","authors":"Zhenghao Duan, Shi Zong, Lei Xu, Zhengdao Xie, Wencheng Niu, Pengcheng Zeng, Lei Liao, Xingqiang Liu","doi":"10.1063/5.0307574","DOIUrl":"https://doi.org/10.1063/5.0307574","url":null,"abstract":"Oxide thin-film transistors (TFTs) suffer from negative bias illumination stress (NBIS) instability, which severely limits their application in flat panel displays. In this study, an ultrathin Y2O3 layer is deposited on top of a 6-nm-thick indium tin yttrium oxide channel layer using an in situ sputtering process. This modification to the back-channel layer demonstrates remarkable improvement in stability. The passivated devices exhibit a high field-effect mobility of 49.7 cm2/V s, an outstanding current on/off ratio of 107, and a threshold voltage (VTH) of −0.9 V. Moreover, the VTH shift under NBIS is significantly reduced from −9.9 to −2.8 V. The passivated devices demonstrating excellent stability can be attributed to the dense Y2O3 layer, which effectively prevents the influence of moisture and oxygen from the ambient environment. And the diffusion of yttrium ions from the Y2O3 layer into the channel layer passivates defects within the channel. This work provides a promising pathway for high-performance oxide TFTs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"34 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Magnetic skyrmions exhibit great potential for spintronic devices due to their topological stability and low-power operation, with their stability and dynamics regulated by multiple magnetic parameters. Here, we employ ion irradiation to synergistically modulate magnetic parameters, investigating current-driven skyrmion motion through irradiation gates and developing a sequential-collaboration skyrmion-based programmable subtractor. The comparison between the ideal and practical gates reveals that skyrmion transport is primarily governed by intrinsic parameters of the ion irradiation gate, thereby validating its reliability. By regulating the driving current density and ion irradiation dose, N + 1 programmable subtraction operation modes can be achieved for the N-skyrmions system. The stable operation of the subtractor has been verified across different device geometries and skyrmion configurations, as well as its programmability. These results provide a valuable paradigm for multi-parameter collaborative regulation of skyrmion devices and valuable insights for developing spintronic devices using ion-irradiation-based magnetic parameter engineering.
{"title":"Programmable skyrmion subtractor based on ion irradiation","authors":"Jing Guo, Yan Liu","doi":"10.1063/5.0308326","DOIUrl":"https://doi.org/10.1063/5.0308326","url":null,"abstract":"Magnetic skyrmions exhibit great potential for spintronic devices due to their topological stability and low-power operation, with their stability and dynamics regulated by multiple magnetic parameters. Here, we employ ion irradiation to synergistically modulate magnetic parameters, investigating current-driven skyrmion motion through irradiation gates and developing a sequential-collaboration skyrmion-based programmable subtractor. The comparison between the ideal and practical gates reveals that skyrmion transport is primarily governed by intrinsic parameters of the ion irradiation gate, thereby validating its reliability. By regulating the driving current density and ion irradiation dose, N + 1 programmable subtraction operation modes can be achieved for the N-skyrmions system. The stable operation of the subtractor has been verified across different device geometries and skyrmion configurations, as well as its programmability. These results provide a valuable paradigm for multi-parameter collaborative regulation of skyrmion devices and valuable insights for developing spintronic devices using ion-irradiation-based magnetic parameter engineering.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Leo Raj Solay, Georgian Melinte, Ganesh Mainali, Dhanu Chettri, Patsy Arely Miranda Cortez, Zixian Jiang, Saravanan Yuvaraja, Na Xiao, Xiaohang Li
Reliable engineering of low-resistance metal semiconductor (M/S) contacts is critical for advancing indium oxide (In2O3) based semiconductor technologies. As device dimensions shrink to the micrometer regime, minimizing contact resistance becomes essential to ensure channel limited operation rather than contact dominated. In this study, we systematically optimized Ni/In2O3 contacts using mild rapid thermal annealing (RTA) at 250 °C in nitrogen ambient conditions compatible with back-end-of-line (BEOL) processing and evaluated their performance using the transfer line method (TLM). Ni/In2O3 TLM structures were fabricated via photolithography and liftoff, followed by RTA at varying durations. Quantitative TLM analysis demonstrated a substantial reduction in contact resistance (RC) to 6.24 Ω, normalized contact resistance (N · RC) to 1.25×10−1 Ω cm, specific contact resistivity (ρC) to 1.53×10−6 Ω cm2, and a short transfer length (LT) of 123 nm, all achieved without intentional doping or complex metallization. This process driven, BEOL compatible approach provides a robust route to low-resistance contacts in In2O3 thin films, enabling a reliable foundation for next generation low power, high performance oxide electronics.
{"title":"Engineering low-resistance Ni/In2O3 contacts for BEOL compatible integration","authors":"Leo Raj Solay, Georgian Melinte, Ganesh Mainali, Dhanu Chettri, Patsy Arely Miranda Cortez, Zixian Jiang, Saravanan Yuvaraja, Na Xiao, Xiaohang Li","doi":"10.1063/5.0296657","DOIUrl":"https://doi.org/10.1063/5.0296657","url":null,"abstract":"Reliable engineering of low-resistance metal semiconductor (M/S) contacts is critical for advancing indium oxide (In2O3) based semiconductor technologies. As device dimensions shrink to the micrometer regime, minimizing contact resistance becomes essential to ensure channel limited operation rather than contact dominated. In this study, we systematically optimized Ni/In2O3 contacts using mild rapid thermal annealing (RTA) at 250 °C in nitrogen ambient conditions compatible with back-end-of-line (BEOL) processing and evaluated their performance using the transfer line method (TLM). Ni/In2O3 TLM structures were fabricated via photolithography and liftoff, followed by RTA at varying durations. Quantitative TLM analysis demonstrated a substantial reduction in contact resistance (RC) to 6.24 Ω, normalized contact resistance (N · RC) to 1.25×10−1 Ω cm, specific contact resistivity (ρC) to 1.53×10−6 Ω cm2, and a short transfer length (LT) of 123 nm, all achieved without intentional doping or complex metallization. This process driven, BEOL compatible approach provides a robust route to low-resistance contacts in In2O3 thin films, enabling a reliable foundation for next generation low power, high performance oxide electronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"160 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146116174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An approximate analytical expression is proposed for calculating the probability of phonon-assisted tunneling of charge carriers between deep centers (traps) in dielectrics and wide-bandgap semiconductors. It is shown that the discrepancy between the proposed approximation and the exact integral expression is orders of magnitude smaller than that of the previously known approximation. It is demonstrated that, with the increasing electric field, it becomes energetically more favorable for the charge carrier, instead of direct energetic excitation, to transfer part of the potential energy to the phonon subsystem before the tunneling act.
{"title":"Advanced approximation for the probability of phonon-assisted tunneling between traps","authors":"Damir R. Islamov, Andrey A. Chernov","doi":"10.1063/5.0303941","DOIUrl":"https://doi.org/10.1063/5.0303941","url":null,"abstract":"An approximate analytical expression is proposed for calculating the probability of phonon-assisted tunneling of charge carriers between deep centers (traps) in dielectrics and wide-bandgap semiconductors. It is shown that the discrepancy between the proposed approximation and the exact integral expression is orders of magnitude smaller than that of the previously known approximation. It is demonstrated that, with the increasing electric field, it becomes energetically more favorable for the charge carrier, instead of direct energetic excitation, to transfer part of the potential energy to the phonon subsystem before the tunneling act.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146116215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hexiang Zhang, Xuguang Zhang, Hanqing Liu, Yi Zheng
This work presents a comprehensive near-field radiative thermal encryption platform that encodes symbolic information using tristate radiative heat-flux distributions across a two-dimensional array of gate terminals. The approach relies on temperature-programmed modulation of near-field radiative heat transfer enabled by phase-change materials placed on the gate of a thermal transistor. By encoding information into spatially varying gate temperatures, the net gate heat transfer can be tuned, which can be modulated and visualized to encode symbolic patterns. Specifically, the word “NEU” was used as an encryption target across several thermal pixels. A temperature permutation was designed to radiate outward from the shape, and radiative heat transfer at the gate was interpolated accordingly using precomputed temperature and radiation relations. To enhance clarity and digital readability, the map was discretized into square grid blocks, each representing an individual logical thermal cell. The results clarify the distinction between the near-field radiative thermal transistor, a physical three-terminal device, and near-field radiative thermal logic computing, the system-level architecture composed of many such devices for spatial logic and encryption. The results address many-body radiative interactions, lateral thermal diffusion, switching and energy considerations, and scalability pathways. Furthermore, the method avoids reliance on external toolboxes, enabling flexible implementation. This framework bridges near-field radiative thermal logic computation and symbolic encryption, offering another paradigm for contactless, reconfigurable, and visually interpretable heat-based information processing.
{"title":"Logic computing-derived near-field radiative thermal encryption","authors":"Hexiang Zhang, Xuguang Zhang, Hanqing Liu, Yi Zheng","doi":"10.1063/5.0314062","DOIUrl":"https://doi.org/10.1063/5.0314062","url":null,"abstract":"This work presents a comprehensive near-field radiative thermal encryption platform that encodes symbolic information using tristate radiative heat-flux distributions across a two-dimensional array of gate terminals. The approach relies on temperature-programmed modulation of near-field radiative heat transfer enabled by phase-change materials placed on the gate of a thermal transistor. By encoding information into spatially varying gate temperatures, the net gate heat transfer can be tuned, which can be modulated and visualized to encode symbolic patterns. Specifically, the word “NEU” was used as an encryption target across several thermal pixels. A temperature permutation was designed to radiate outward from the shape, and radiative heat transfer at the gate was interpolated accordingly using precomputed temperature and radiation relations. To enhance clarity and digital readability, the map was discretized into square grid blocks, each representing an individual logical thermal cell. The results clarify the distinction between the near-field radiative thermal transistor, a physical three-terminal device, and near-field radiative thermal logic computing, the system-level architecture composed of many such devices for spatial logic and encryption. The results address many-body radiative interactions, lateral thermal diffusion, switching and energy considerations, and scalability pathways. Furthermore, the method avoids reliance on external toolboxes, enabling flexible implementation. This framework bridges near-field radiative thermal logic computation and symbolic encryption, offering another paradigm for contactless, reconfigurable, and visually interpretable heat-based information processing.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"241 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this Letter, we construct a family of intrinsically noncentrosymmetric Janus PdXY (X, Y = S, Se, Te) monolayers and reveal their significantly enhanced second harmonic generation (SHG) responses across the entire infrared region via ab initio calculations. Comprehensive energetic and vibrational analyses further confirm that Janus PdXY monolayers are thermodynamically stable and experimentally accessible. These systems possess pronounced conduction-band separation characteristics, confining the optical transitions to a limited set of low-energy bands and leading to a resonantly enhanced SHG response in the infrared region. The in-plane SHG susceptibility reaches up to 1740.42 pm/V in the infrared region, surpassing that of representative bulk nonlinear crystals and 2D materials by 1–2 orders of magnitude. The enhanced infrared SHG response is mainly dominated by intraband transitions, with a highly symmetric and spatially localized distribution in momentum space. The Janus PdXY monolayers exhibit anisotropic polarization-resolved SHG patterns, with symmetry and intensity determined by the excitation geometry and SHG susceptibility, as captured by the proposed analytical model. These findings provide a rational guideline for designing high-performance nonlinear infrared materials, paving the way for the application of Janus structures in next-generation on-chip infrared photonic and optoelectronic devices.
在这篇论文中，我们构建了一个本质上非中心对称的Janus PdXY （X, Y = S, Se, Te）单层，并通过从头计算揭示了它们在整个红外区域显著增强的二次谐波产生（SHG）响应。综合的能量和振动分析进一步证实了Janus PdXY单层膜是热力学稳定的，实验上是可接近的。这些系统具有明显的导带分离特性，将光学跃迁限制在有限的一组低能量波段，并导致红外区域的共振增强SHG响应。红外区面内SHG磁化率高达1740.42 pm/V，比典型块状非线性晶体和二维材料高出1-2个数量级。增强的红外SHG响应主要以带内跃迁为主，在动量空间中具有高度对称和空间局域化的分布。Janus PdXY单层表现出各向异性偏振分辨的SHG模式，其对称性和强度由激发几何形状和SHG磁化率决定，如所提出的分析模型所示。这些发现为设计高性能非线性红外材料提供了合理的指导，为Janus结构在下一代片上红外光子和光电子器件中的应用铺平了道路。
{"title":"Significantly enhanced infrared second harmonic generation in 1T-phase Janus PdXY (X, Y = S, Se, Te) monolayers","authors":"Xiaozhendong Bao, Shi-Qi Li, Qianyu Chen, Junlong Tan, Zhijie Lei, Yuee Xie, Yuanping Chen","doi":"10.1063/5.0320526","DOIUrl":"https://doi.org/10.1063/5.0320526","url":null,"abstract":"In this Letter, we construct a family of intrinsically noncentrosymmetric Janus PdXY (X, Y = S, Se, Te) monolayers and reveal their significantly enhanced second harmonic generation (SHG) responses across the entire infrared region via ab initio calculations. Comprehensive energetic and vibrational analyses further confirm that Janus PdXY monolayers are thermodynamically stable and experimentally accessible. These systems possess pronounced conduction-band separation characteristics, confining the optical transitions to a limited set of low-energy bands and leading to a resonantly enhanced SHG response in the infrared region. The in-plane SHG susceptibility reaches up to 1740.42 pm/V in the infrared region, surpassing that of representative bulk nonlinear crystals and 2D materials by 1–2 orders of magnitude. The enhanced infrared SHG response is mainly dominated by intraband transitions, with a highly symmetric and spatially localized distribution in momentum space. The Janus PdXY monolayers exhibit anisotropic polarization-resolved SHG patterns, with symmetry and intensity determined by the excitation geometry and SHG susceptibility, as captured by the proposed analytical model. These findings provide a rational guideline for designing high-performance nonlinear infrared materials, paving the way for the application of Janus structures in next-generation on-chip infrared photonic and optoelectronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report over 3 kV breakdown voltage and ultra-low leakage (011) β-Ga2O3 power devices utilizing Schottky barrier engineering and high-permittivity (κ) dielectric (ZrO2) field plate. The (011) orientation of β-Ga2O3 enabled low background doping and thick drift layers, which are promising to support kV class vertical β-Ga2O3 power switches. The Schottky barrier engineering was performed with a composite Pt cap/PtOx/Pt (1.5 nm) anode contact to take advantage of the enhanced reverse blocking capabilities enabled by PtOx while allowing low turn-on voltage by the interfacing thin Pt layer. We also performed a systematic study using a co-processed Pt/(011) β-Ga2O3 Schottky barrier diodes (SBDs) on the same wafer. The bare SBDs revealed a breakdown voltage of ∼1.5 kV, while the field-plate Pt/(011) β-Ga2O3 SBDs achieved an increased breakdown voltage of 2.75 kV owing to the edge field management. Further enhancement of the breakdown voltage was achieved by tunneling leakage management using composite Pt cap/PtOx/Pt (1.5 nm) Schottky contacts that ultimately enabled a breakdown voltage of 3.7 kV for the field-plate diodes. Remarkably, the Pt cap/PtOx/Pt (1.5 nm) Schottky contacts maintained a similar turn-on voltage as the Pt/(011) β-Ga2O3 SBDs. The combination of efficient tunneling leakage management by composite Pt cap/PtOx/Pt (1.5 nm) contacts with similar turn-on voltage, edge field reduction by high-κ dielectric ZrO2 field plate, as well as the advantageous material properties offered by (011) β-Ga2O3 demonstrates a promising strategy for developing ultra-low leakage and multi-kV class vertical (011) β-Ga2O3 power devices.
{"title":"Over 3 kV and ultra-low leakage vertical (011) β -Ga2O3 power diodes with engineered Schottky contact and high-permittivity dielectric field plate","authors":"Emerson J. Hollar, Esmat Farzana","doi":"10.1063/5.0309746","DOIUrl":"https://doi.org/10.1063/5.0309746","url":null,"abstract":"We report over 3 kV breakdown voltage and ultra-low leakage (011) β-Ga2O3 power devices utilizing Schottky barrier engineering and high-permittivity (κ) dielectric (ZrO2) field plate. The (011) orientation of β-Ga2O3 enabled low background doping and thick drift layers, which are promising to support kV class vertical β-Ga2O3 power switches. The Schottky barrier engineering was performed with a composite Pt cap/PtOx/Pt (1.5 nm) anode contact to take advantage of the enhanced reverse blocking capabilities enabled by PtOx while allowing low turn-on voltage by the interfacing thin Pt layer. We also performed a systematic study using a co-processed Pt/(011) β-Ga2O3 Schottky barrier diodes (SBDs) on the same wafer. The bare SBDs revealed a breakdown voltage of ∼1.5 kV, while the field-plate Pt/(011) β-Ga2O3 SBDs achieved an increased breakdown voltage of 2.75 kV owing to the edge field management. Further enhancement of the breakdown voltage was achieved by tunneling leakage management using composite Pt cap/PtOx/Pt (1.5 nm) Schottky contacts that ultimately enabled a breakdown voltage of 3.7 kV for the field-plate diodes. Remarkably, the Pt cap/PtOx/Pt (1.5 nm) Schottky contacts maintained a similar turn-on voltage as the Pt/(011) β-Ga2O3 SBDs. The combination of efficient tunneling leakage management by composite Pt cap/PtOx/Pt (1.5 nm) contacts with similar turn-on voltage, edge field reduction by high-κ dielectric ZrO2 field plate, as well as the advantageous material properties offered by (011) β-Ga2O3 demonstrates a promising strategy for developing ultra-low leakage and multi-kV class vertical (011) β-Ga2O3 power devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"21 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146116173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Tang, W.-W. Yu, Y.-C. Yuan, Y. Chen, B.-C. Qu, Z.-D. Han, R.-K. Zheng, Y. Liu, Y. Fang
Magnetic topological compounds offer an ideal platform for studying the complex interplay between intrinsic magnetism, symmetry breaking, and band topology. Herein, we grew EuAl2Ge2 single crystals and investigated their electronic features via quantum oscillations and theoretical calculations. This compound exhibits an antiferromagnetic ground state below 27.6 K, and a field-induced transition to a ferromagnetic phase with distinct anisotropy. Clear Shubnikov–de Haas oscillations observed in the ferromagnetic regime disclose a multi-sheet Fermi surface with significant c-axis elongation, further corroborated by angular magnetoresistance measurements and theoretical calculations. Crucially, the nonmagnetic phase harbors two symmetry-protected pairs of Dirac points, whereas ferromagnetic order drives distinct topological electronic phases: out-of-plane magnetization preserves C3z symmetry and yields multiple Weyl nodes, while in-plane magnetization breaks rotational symmetry and causes a reduced Weyl state. Our results establish EuAl2Ge2 as a promising platform for achieving direct magnetic control over band topology and exploring tunable topological quantum phases.
{"title":"Shubnikov–de Haas oscillations and electronic features in the ferromagnetic semimetal EuAl2Ge2","authors":"F. Tang, W.-W. Yu, Y.-C. Yuan, Y. Chen, B.-C. Qu, Z.-D. Han, R.-K. Zheng, Y. Liu, Y. Fang","doi":"10.1063/5.0314622","DOIUrl":"https://doi.org/10.1063/5.0314622","url":null,"abstract":"Magnetic topological compounds offer an ideal platform for studying the complex interplay between intrinsic magnetism, symmetry breaking, and band topology. Herein, we grew EuAl2Ge2 single crystals and investigated their electronic features via quantum oscillations and theoretical calculations. This compound exhibits an antiferromagnetic ground state below 27.6 K, and a field-induced transition to a ferromagnetic phase with distinct anisotropy. Clear Shubnikov–de Haas oscillations observed in the ferromagnetic regime disclose a multi-sheet Fermi surface with significant c-axis elongation, further corroborated by angular magnetoresistance measurements and theoretical calculations. Crucially, the nonmagnetic phase harbors two symmetry-protected pairs of Dirac points, whereas ferromagnetic order drives distinct topological electronic phases: out-of-plane magnetization preserves C3z symmetry and yields multiple Weyl nodes, while in-plane magnetization breaks rotational symmetry and causes a reduced Weyl state. Our results establish EuAl2Ge2 as a promising platform for achieving direct magnetic control over band topology and exploring tunable topological quantum phases.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"34 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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