Biological systems undergo constant dynamic changes across various spatial and temporal scales. To investigate the intricate biological dynamics in living organisms, there is a strong need for high-speed and high-resolution imaging capabilities with significant imaging depth. In this work, we present high-spatiotemporal resolution microwave-induced thermoacoustic tomography (HR-MTAT) as a method for imaging biological dynamics in deep tissues. HR-MTAT utilizes nanosecond pulsed microwave excitation and ultrasound detection, with appropriate spatial configurations, to achieve high coupling of the sample to the microwaves, to produce images in soft tissue with dielectric contrast and sub-millimeter spatial resolution (230 μm), to a depth of a few centimeters. Notably, by employing a 128-channel parallel signal acquisition and digitization strategy, the field programmable gate array module manages data synthesis, and GPU-based parallel pixel reconstruction facilitates HR-MTAT to accomplish single-frame image reconstruction in an impressive 50 μs. The practical feasibility of HR-MTAT was evaluated in live mice. The results show that HR-MTAT can noninvasively image whole-body small animals (up to 60 mm in depth) with clear resolution of internal organ structures at a frame rate of 100 Hz, without the need for labeling. At this high spatiotemporal resolution, HR-MTAT can capture respiration, heartbeat, and arterial pulse propagation without motion artifacts and track bio-nanoprobes in livers and tumors. These findings demonstrate HR-MTAT's ability to perform dynamic imaging with high contrast and resolution in deep tissues.
{"title":"High-spatiotemporal resolution microwave-induced thermoacoustic tomography for imaging biological dynamics in deep tissue","authors":"Yu Wang, Xiaoyu Tang, Huan Qin","doi":"10.1063/5.0216061","DOIUrl":"https://doi.org/10.1063/5.0216061","url":null,"abstract":"Biological systems undergo constant dynamic changes across various spatial and temporal scales. To investigate the intricate biological dynamics in living organisms, there is a strong need for high-speed and high-resolution imaging capabilities with significant imaging depth. In this work, we present high-spatiotemporal resolution microwave-induced thermoacoustic tomography (HR-MTAT) as a method for imaging biological dynamics in deep tissues. HR-MTAT utilizes nanosecond pulsed microwave excitation and ultrasound detection, with appropriate spatial configurations, to achieve high coupling of the sample to the microwaves, to produce images in soft tissue with dielectric contrast and sub-millimeter spatial resolution (230 μm), to a depth of a few centimeters. Notably, by employing a 128-channel parallel signal acquisition and digitization strategy, the field programmable gate array module manages data synthesis, and GPU-based parallel pixel reconstruction facilitates HR-MTAT to accomplish single-frame image reconstruction in an impressive 50 μs. The practical feasibility of HR-MTAT was evaluated in live mice. The results show that HR-MTAT can noninvasively image whole-body small animals (up to 60 mm in depth) with clear resolution of internal organ structures at a frame rate of 100 Hz, without the need for labeling. At this high spatiotemporal resolution, HR-MTAT can capture respiration, heartbeat, and arterial pulse propagation without motion artifacts and track bio-nanoprobes in livers and tumors. These findings demonstrate HR-MTAT's ability to perform dynamic imaging with high contrast and resolution in deep tissues.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report the development of a compact, highly stable, monolithic-cavity, GaInP/AlGaInP-based vertical-external-cavity surface-emitting laser (VECSEL) with electronically tunable emission wavelength centered at 689.4425 nm for neutral strontium (Sr)-based applications. The output power reaches 40 mW (pump-power-limited) with ultra-low frequency and intensity noise performance resulting in a free-running linewidth of 720 Hz, reduced to 390 Hz when frequency locked to a reference cavity and verified via a heterodyne beat note measurement with 2 s averaging time. For shorter averaging times (0.1 ms), the free-running linewidth is as low as 40 Hz. We estimate a Lorentzian, or intrinsic, linewidth of 64 mHz from the frequency noise power spectral density at high frequencies, thus providing further evidence of the ultra-narrow fundamental linewidth of VECSELs. High frequency stability was measured via Allan deviation resulting in 1.05 × 10−12 at 2 s and 2.11 × 10−13 at 7 s averaging times when the 689 nm monolithic cavity VECSEL is free-running and locked, respectively, suitable for neutral Sr-based quantum technologies, such as optical clocks and atom interferometry.
{"title":"Sub-kilohertz linewidth free-running monolithic cavity VECSEL with 10−12 stability","authors":"P. H. Moriya, M. Lee, J. E. Hastie","doi":"10.1063/5.0208564","DOIUrl":"https://doi.org/10.1063/5.0208564","url":null,"abstract":"We report the development of a compact, highly stable, monolithic-cavity, GaInP/AlGaInP-based vertical-external-cavity surface-emitting laser (VECSEL) with electronically tunable emission wavelength centered at 689.4425 nm for neutral strontium (Sr)-based applications. The output power reaches 40 mW (pump-power-limited) with ultra-low frequency and intensity noise performance resulting in a free-running linewidth of 720 Hz, reduced to 390 Hz when frequency locked to a reference cavity and verified via a heterodyne beat note measurement with 2 s averaging time. For shorter averaging times (0.1 ms), the free-running linewidth is as low as 40 Hz. We estimate a Lorentzian, or intrinsic, linewidth of 64 mHz from the frequency noise power spectral density at high frequencies, thus providing further evidence of the ultra-narrow fundamental linewidth of VECSELs. High frequency stability was measured via Allan deviation resulting in 1.05 × 10−12 at 2 s and 2.11 × 10−13 at 7 s averaging times when the 689 nm monolithic cavity VECSEL is free-running and locked, respectively, suitable for neutral Sr-based quantum technologies, such as optical clocks and atom interferometry.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report on the experimental demonstration of aluminum scandium nitride (AlScN)-on-cubic silicon carbide (3C-SiC) Lamb wave resonators (LWRs) realized via microelectromechanical systems (MEMS) technology, operating at high temperature (T) up to T = 800 °C, while retaining robust electromechanical resonances at ∼27 MHz and good quality factor of Q ≈ 900 even at 800 °C. Measured resonances exhibit clear consistency and stability during heating and cooling processes, validating the AlScN-on-SiC LWRs can operate at high T up to 800 °C without noticeable degradation in moderate vacuum (∼20 mTorr). Even after undergoing four complete thermal cycles (heating from 23 to 800 °C and then cooling down to 23 °C), the devices exhibit robust resonance behavior, suggesting excellent stability and suitability for high-temperature applications. Q starts to decline as the temperature exceeds 400 °C, which can be attributed to energy dissipation mechanisms stemming from thermoelastic damping and intrinsic material loss originating from phonon–phonon interactions.
我们报告了通过微机电系统（MEMS）技术实现的氮化铝钪（AlScN）-立方碳化硅（3C-SiC）兰姆波谐振器（LWRs）的实验演示，该谐振器可在高达 T = 800 °C 的高温（T）下工作，同时在 ∼27 MHz 的频率下保持稳健的机电共振，即使在 800 °C 下也能保持 Q ≈ 900 的良好品质因数。测量到的共振在加热和冷却过程中表现出明显的一致性和稳定性，验证了 AlScN-on-SiC LWR 可以在高达 800 °C 的高温下工作，而不会在中等真空（20 mTorr）条件下出现明显的衰减。即使经历了四次完整的热循环（从 23 ℃ 加热到 800 ℃，然后冷却到 23 ℃），器件仍能表现出稳健的共振行为，这表明器件具有出色的稳定性，适合高温应用。当温度超过 400 ℃ 时，Q 值开始下降，这可归因于热弹性阻尼的能量耗散机制和声子-声子相互作用产生的内在材料损耗。
{"title":"AlScN-on-SiC microelectromechanical Lamb wave resonators operating at high temperature up to 800 °C","authors":"Wen Sui, Philip X.-L. Feng","doi":"10.1063/5.0185606","DOIUrl":"https://doi.org/10.1063/5.0185606","url":null,"abstract":"We report on the experimental demonstration of aluminum scandium nitride (AlScN)-on-cubic silicon carbide (3C-SiC) Lamb wave resonators (LWRs) realized via microelectromechanical systems (MEMS) technology, operating at high temperature (T) up to T = 800 °C, while retaining robust electromechanical resonances at ∼27 MHz and good quality factor of Q ≈ 900 even at 800 °C. Measured resonances exhibit clear consistency and stability during heating and cooling processes, validating the AlScN-on-SiC LWRs can operate at high T up to 800 °C without noticeable degradation in moderate vacuum (∼20 mTorr). Even after undergoing four complete thermal cycles (heating from 23 to 800 °C and then cooling down to 23 °C), the devices exhibit robust resonance behavior, suggesting excellent stability and suitability for high-temperature applications. Q starts to decline as the temperature exceeds 400 °C, which can be attributed to energy dissipation mechanisms stemming from thermoelastic damping and intrinsic material loss originating from phonon–phonon interactions.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aoqi Fang, Jixin Liu, Zaifa Du, Penghao Tang, Yiyang Xie, Weiling Guo, Hao Xu, Jie Sun
To enhance the emission of GaN-based Micro-LEDs (μLEDs), we etched uniform nanorods (NRs) on the μLED surface and filled the nanorod gaps with spin-on glass (SOG) containing mixed Ag nanoparticles (NPs). The nanorod structure creates a conducive environment for close interaction between Ag NPs and quantum wells (QWs), facilitating the coupling of Ag NPs as localized surface plasmons (LSPs) with the QWs to enhance light emission. The SOG acts as an insulating layer between Ag NPs and NRs, preventing electron leakage, while also serving as a planarization material for the nanorod structure. This configuration allows for the fabrication of a planar Indium Tin Oxide layer without short-circuiting the nanorod structure. Compared to traditional planar Micro-LEDs, NR-μLEDs with SOG-encased Ag NPs exhibit a 50% increase in electroluminescence (EL) intensity and a 56% increase in photoluminescence (PL) intensity. This work paves the way for broader applications of LSP in μLEDs.
{"title":"Localized surface plasmon-enhanced nanorod micro-LEDs with Ag nanoparticles embedded in insulating and planarizing spin-on glass","authors":"Aoqi Fang, Jixin Liu, Zaifa Du, Penghao Tang, Yiyang Xie, Weiling Guo, Hao Xu, Jie Sun","doi":"10.1063/5.0211870","DOIUrl":"https://doi.org/10.1063/5.0211870","url":null,"abstract":"To enhance the emission of GaN-based Micro-LEDs (μLEDs), we etched uniform nanorods (NRs) on the μLED surface and filled the nanorod gaps with spin-on glass (SOG) containing mixed Ag nanoparticles (NPs). The nanorod structure creates a conducive environment for close interaction between Ag NPs and quantum wells (QWs), facilitating the coupling of Ag NPs as localized surface plasmons (LSPs) with the QWs to enhance light emission. The SOG acts as an insulating layer between Ag NPs and NRs, preventing electron leakage, while also serving as a planarization material for the nanorod structure. This configuration allows for the fabrication of a planar Indium Tin Oxide layer without short-circuiting the nanorod structure. Compared to traditional planar Micro-LEDs, NR-μLEDs with SOG-encased Ag NPs exhibit a 50% increase in electroluminescence (EL) intensity and a 56% increase in photoluminescence (PL) intensity. This work paves the way for broader applications of LSP in μLEDs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
InGaN-based micro-light-emitting diodes (LEDs) grown on Si have gained tremendous interest for full-color displays. Strain management is a key challenge for the epitaxial growth of InGaN-based long-wavelength LEDs on Si because the accumulated compressive strain can severely limit In incorporation and degrade the quality of InGaN multi-quantum wells (MQWs) when the conventional Al-composition step-graded AlN/AlGaN buffer is used for strain control. In this work, we demonstrate a promising approach to effectively reduce the in-plane residual compressive stress of GaN by using an AlN single-layer buffer. The in-plane lattice parameter of the GaN underlayer was increased from 3.183 to 3.189 Å with the residual compressive stress at room temperature reduced from 0.37 to ∼0 GPa, which significantly improved the In incorporation of InGaN MQWs and extended the photoluminescence wavelength from 510 to 550 nm. A remarkably high internal quantum efficiency of 78% was thus achieved for the as-grown InGaN-based green LEDs on Si. This work paves the way for the growth of high-efficiency InGaN-based long-wavelength micro-LEDs.
在硅上生长的基于 InGaN 的微型发光二极管 (LED) 在全彩显示领域获得了极大的关注。应变管理是在硅上外延生长基于 InGaN 的长波长 LED 所面临的一个关键挑战，因为当使用传统的铝-阶梯分级 AlN/AlGaN 缓冲器进行应变控制时，累积的压缩应变会严重限制 In 的掺入，并降低 InGaN 多量子阱 (MQW) 的质量。在这项工作中，我们展示了一种很有前景的方法，即通过使用 AlN 单层缓冲器来有效降低 GaN 的面内残余压应力。GaN 底层的面内晶格参数从 3.183 Å 增加到 3.189 Å，室温下的残余压应力从 0.37 GPa 降低到 0 ∼ 0 GPa，从而显著提高了 InGaN MQW 的铟掺入率，并将光致发光波长从 510 nm 延长到 550 nm。因此，在硅上生长的基于 InGaN 的绿色 LED 的内部量子效率高达 78%。这项工作为生长基于 InGaN 的高效长波长微型 LED 铺平了道路。
{"title":"Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering","authors":"Yayu Dai, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Yujiao Luo, Shuming Zhang, Qian Sun, Liangji Wang, Yun Ji, Masao Ikeda, Hui Yang","doi":"10.1063/5.0218897","DOIUrl":"https://doi.org/10.1063/5.0218897","url":null,"abstract":"InGaN-based micro-light-emitting diodes (LEDs) grown on Si have gained tremendous interest for full-color displays. Strain management is a key challenge for the epitaxial growth of InGaN-based long-wavelength LEDs on Si because the accumulated compressive strain can severely limit In incorporation and degrade the quality of InGaN multi-quantum wells (MQWs) when the conventional Al-composition step-graded AlN/AlGaN buffer is used for strain control. In this work, we demonstrate a promising approach to effectively reduce the in-plane residual compressive stress of GaN by using an AlN single-layer buffer. The in-plane lattice parameter of the GaN underlayer was increased from 3.183 to 3.189 Å with the residual compressive stress at room temperature reduced from 0.37 to ∼0 GPa, which significantly improved the In incorporation of InGaN MQWs and extended the photoluminescence wavelength from 510 to 550 nm. A remarkably high internal quantum efficiency of 78% was thus achieved for the as-grown InGaN-based green LEDs on Si. This work paves the way for the growth of high-efficiency InGaN-based long-wavelength micro-LEDs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tellurium (Te) has great potential as high-performance cathode materials for aqueous zinc-ion batteries (AZIBs) owing to high electronic conductivity and volumetric capacity. Nevertheless, its poor utilization and large volume expansion result in insufficient rate and cycle performances, thereby, impeding practical application. Herein, a kind of Te/carbon composite was prepared via a ball-milling method, in which Te nanocrystals were tightly confined in few-layer expanded graphite (EG) with Te–C bonds (denoted as Te@EG). In addition to maintaining structural stability, such unique nanocomposite shows abundant electrochemically active sites and efficient charge transfer channels, which is beneficial to the utilization of Te. More importantly, the Te–C bonds between Te nanocrystals and EG can enhance the adsorption of Zn2+ and reduce the Zn2+ migration barrier, which contributes to promoting electrochemical kinetics. Consequently, the Te@EG cathode for the AZIBs exhibits sufficient specific capacity (412 mAh g–1 at 0.1 A g–1), high-rate performance (284 mAh g–1 at 3 A g–1), and reliable cycling stability (94% capacity retention at 1 A g–1 after 500 cycles). Furthermore, the soft-packaged Zn//Te@EG battery delivers excellent flexibility and cycling stability. This study offers a perspective on rational design of Te-based cathodes for practical AZIBs.
碲（Te）具有很高的电子传导性和体积容量，因此作为水性锌离子电池（AZIB）的高性能阴极材料具有很大的潜力。然而，由于其利用率低、体积膨胀大，导致其速率和循环性能不足，从而阻碍了其实际应用。本文通过球磨法制备了一种碲/碳复合材料，将碲纳米晶体紧密地限制在具有碲-碳键的几层膨胀石墨（EG）中（称为 Te@EG）。这种独特的纳米复合材料除了保持结构稳定外，还具有丰富的电化学活性位点和高效的电荷转移通道，有利于碲的利用。更重要的是，Te 纳米晶体与 EG 之间的 Te-C 键能增强对 Zn2+ 的吸附，降低 Zn2+ 迁移障碍，从而促进电化学动力学。因此，用于 AZIBs 的 Te@EG 阴极表现出足够的比容量（0.1 A g-1 时为 412 mAh g-1）、高倍率性能（3 A g-1 时为 284 mAh g-1）和可靠的循环稳定性（1 A g-1 循环 500 次后容量保持率为 94%）。此外，软包装 Zn/Te@EG 电池还具有出色的灵活性和循环稳定性。这项研究为合理设计实用 AZIB 的 Te 基阴极提供了一个视角。
{"title":"Tightly confined tellurium nanocrystals in few-layer expanded graphite with Te–C bonds toward highly reversible zinc storage","authors":"Hengyu Yang, Yongle Liang, Fengjun Niu, Huaijun Zhang, Guobao Xu, Xiaolin Wei, Liwen Yang","doi":"10.1063/5.0209116","DOIUrl":"https://doi.org/10.1063/5.0209116","url":null,"abstract":"Tellurium (Te) has great potential as high-performance cathode materials for aqueous zinc-ion batteries (AZIBs) owing to high electronic conductivity and volumetric capacity. Nevertheless, its poor utilization and large volume expansion result in insufficient rate and cycle performances, thereby, impeding practical application. Herein, a kind of Te/carbon composite was prepared via a ball-milling method, in which Te nanocrystals were tightly confined in few-layer expanded graphite (EG) with Te–C bonds (denoted as Te@EG). In addition to maintaining structural stability, such unique nanocomposite shows abundant electrochemically active sites and efficient charge transfer channels, which is beneficial to the utilization of Te. More importantly, the Te–C bonds between Te nanocrystals and EG can enhance the adsorption of Zn2+ and reduce the Zn2+ migration barrier, which contributes to promoting electrochemical kinetics. Consequently, the Te@EG cathode for the AZIBs exhibits sufficient specific capacity (412 mAh g–1 at 0.1 A g–1), high-rate performance (284 mAh g–1 at 3 A g–1), and reliable cycling stability (94% capacity retention at 1 A g–1 after 500 cycles). Furthermore, the soft-packaged Zn//Te@EG battery delivers excellent flexibility and cycling stability. This study offers a perspective on rational design of Te-based cathodes for practical AZIBs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Z. Gong, B. B. Yang, M. Liu, R. R. Zhang, H. Y. Tong, R. H. Wei, L. Hu, X. B. Zhu, Y. P. Sun
To obtain high energy storage density in ferroelectric films, polarization and breakdown field Eb are two crucial factors. The inversely coupled relationship between polarization and Eb is commonly observed and it remains a challenge to realize high Eb without deteriorating polarization. Selecting a suitable element doping should largely enhance the Eb since of the optimization of microstructures as well as the decrease in defects, meanwhile the doping should induce extra polarization contribution from lattice distortion. In this work, we reported that Eb can be largely enhanced via Mn doping in BaBi4Ti4O15 thin films due to grain refining, densification, and oxygen vacancy reduction. Interestingly, the polarization is not deteriorated since of the Mn doping effect induced extra polarization from the lattice distortion. Consequently, an ultrahigh energy storage density of 96 J/cm3 with a high efficiency of 76.6% was achieved in BaBi4Ti3.95Mn0.05O15 thin films with excellent stability and reliability. This work will provide a simple and effective route to improve the energy storage in dielectric capacitors.
{"title":"Mn doping as a simple strategy for improving energy storage in BaBi4Ti4O15 thin films","authors":"C. Z. Gong, B. B. Yang, M. Liu, R. R. Zhang, H. Y. Tong, R. H. Wei, L. Hu, X. B. Zhu, Y. P. Sun","doi":"10.1063/5.0217696","DOIUrl":"https://doi.org/10.1063/5.0217696","url":null,"abstract":"To obtain high energy storage density in ferroelectric films, polarization and breakdown field Eb are two crucial factors. The inversely coupled relationship between polarization and Eb is commonly observed and it remains a challenge to realize high Eb without deteriorating polarization. Selecting a suitable element doping should largely enhance the Eb since of the optimization of microstructures as well as the decrease in defects, meanwhile the doping should induce extra polarization contribution from lattice distortion. In this work, we reported that Eb can be largely enhanced via Mn doping in BaBi4Ti4O15 thin films due to grain refining, densification, and oxygen vacancy reduction. Interestingly, the polarization is not deteriorated since of the Mn doping effect induced extra polarization from the lattice distortion. Consequently, an ultrahigh energy storage density of 96 J/cm3 with a high efficiency of 76.6% was achieved in BaBi4Ti3.95Mn0.05O15 thin films with excellent stability and reliability. This work will provide a simple and effective route to improve the energy storage in dielectric capacitors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yan Qiu, Mingxin Shi, Ying Zhou, Jian Wu, Yongdong Li, Xingwen Li
We investigate the effects of specular reflection on the laser-induced breakdown (LIB) of copper, iron, and tungsten using fast photography and optical emission spectroscopy. The laser parameters include spot diameter ranging from 30.89 to 1589.33 μm, irradiance from 467.10 to 0.17 GW/cm2, with a single pulse of 6 ns duration and 21 mJ energy. As the laser spot defocuses, the plasma morphology changes from a single plasma near the target surface to a separated, independently evolving two-component plasma, and then to a single plasma suspended above. The defocusing distance for this transition is significantly influenced by specular reflectance. The separate plasma, comprising of a metallic component and an air component, occurs only under high specular reflectance conditions: ≥66.7% for copper, ≥51.4% for iron, and ≥44.9% for tungsten. The spectral emission of the metallic component initially increases and then decreases with reducing specular reflectance, due to a trade-off between enhanced surface absorption and reduced irradiance caused by surface roughening. LIB threshold irradiance increases with specular reflectance, rising from 0.31 to 1.22 GW/cm2 for copper, 0.24 to 0.70 GW/cm2 for iron, and 0.38 to 0.87 GW/cm2 for tungsten. These findings show the impact of sample pretreatment on LIB ignition and subsequent plasma evolution, offering insights into potential sources of inaccuracy in LIB applications.
{"title":"Effects of specular reflectance in laser-induced breakdown of metals","authors":"Yan Qiu, Mingxin Shi, Ying Zhou, Jian Wu, Yongdong Li, Xingwen Li","doi":"10.1063/5.0213672","DOIUrl":"https://doi.org/10.1063/5.0213672","url":null,"abstract":"We investigate the effects of specular reflection on the laser-induced breakdown (LIB) of copper, iron, and tungsten using fast photography and optical emission spectroscopy. The laser parameters include spot diameter ranging from 30.89 to 1589.33 μm, irradiance from 467.10 to 0.17 GW/cm2, with a single pulse of 6 ns duration and 21 mJ energy. As the laser spot defocuses, the plasma morphology changes from a single plasma near the target surface to a separated, independently evolving two-component plasma, and then to a single plasma suspended above. The defocusing distance for this transition is significantly influenced by specular reflectance. The separate plasma, comprising of a metallic component and an air component, occurs only under high specular reflectance conditions: ≥66.7% for copper, ≥51.4% for iron, and ≥44.9% for tungsten. The spectral emission of the metallic component initially increases and then decreases with reducing specular reflectance, due to a trade-off between enhanced surface absorption and reduced irradiance caused by surface roughening. LIB threshold irradiance increases with specular reflectance, rising from 0.31 to 1.22 GW/cm2 for copper, 0.24 to 0.70 GW/cm2 for iron, and 0.38 to 0.87 GW/cm2 for tungsten. These findings show the impact of sample pretreatment on LIB ignition and subsequent plasma evolution, offering insights into potential sources of inaccuracy in LIB applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The advancement of acoustic metamaterials enables the highly efficient absorption of low-frequency noise with a subwavelength structure thickness, but the complexity of these structures often hinders their large-scale practical applications. Here, we propose a straightforward and compact acoustic metamaterial structure composed of Helmholtz resonators with side slits (HRSS) for low-frequency noise absorption. The introduction of side slits not only simplifies the overall structure but also allows for easy adjustment of acoustic characteristics. By adjusting the depth of the resonator within the slit across 25 distinct units, an absorption coefficient above 0.8 is realized from 470 to 930 Hz. This work demonstrates the extensive low-frequency sound absorption capability of HRSS, providing valuable insights into the design of future practical acoustic materials.
{"title":"A compact acoustic metamaterial based on Helmholtz resonators with side slits for low-frequency sound absorption","authors":"Xingyu Chen, Feiyang Sun, Jing Zhang, Gaorui Chen, Liyue Xu, Li Fan, Liping Cheng, Xiaodong Xu, Yunteng Chen, Jiexin Zhou, Liangping Li, Shaoping Yang","doi":"10.1063/5.0212688","DOIUrl":"https://doi.org/10.1063/5.0212688","url":null,"abstract":"The advancement of acoustic metamaterials enables the highly efficient absorption of low-frequency noise with a subwavelength structure thickness, but the complexity of these structures often hinders their large-scale practical applications. Here, we propose a straightforward and compact acoustic metamaterial structure composed of Helmholtz resonators with side slits (HRSS) for low-frequency noise absorption. The introduction of side slits not only simplifies the overall structure but also allows for easy adjustment of acoustic characteristics. By adjusting the depth of the resonator within the slit across 25 distinct units, an absorption coefficient above 0.8 is realized from 470 to 930 Hz. This work demonstrates the extensive low-frequency sound absorption capability of HRSS, providing valuable insights into the design of future practical acoustic materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141521938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shufeng Song, Zongyuan Chen, Shengxian Wang, Fengkun Wei, Serguei V. Savilov, Anji Reddy Polu, Pramod K. Singh, Zhaoqin Liu, Ning Hu
Ionogels, which are being considered as quasi-solid electrolytes for energy-storage devices, exhibited technical superiority in terms of nonflammability, negligible vapor pressure, remarkable thermostability, high ionic conductivity, and broad electrochemical stability window. However, their applications in lithium metal batteries (LMBs) have been hindered by several issues: poor compatibility with Li-metal anodes and high-voltage cathodes, high viscosity, and inadequate wettability. Little attention has been paid to ionogel-based low-concentration electrolytes, despite their potential advantages in terms of Li+ mobility, viscosity, electrode wettability, and cost. Here, we demonstrate the surprising capabilities of localized high-concentration ionogel (LHCI) and dilutedly localized high-concentration ionogel (DLHCI) electrolytes, utilizing the non-solvating fluorinated ether 1,1,2,2-tetrafluoroethyl-2,2,3,3-tetrafluoropropyl ether, to realize high-voltage quasi-solid-state lithium metal batteries (QSLMBs). Notably, the DLHCI electrolyte not only delivers superior ionic conductivity of 3.93 × 10−3 S cm−1 but also provides a high Li plating/stripping Coulombic efficiency exceeding 99%. Moreover, it significantly enhances anodic stability when paired with 4.4 V LiNi0.8Co0.1Mn0.1O2 (NCM811) and 4.8 V LiNi0.5Mn1.5O4 (LNMO). Consequently, substantial improvement in cycling performance of QSLMBs has been realized with the DLHCI electrolyte.
离子凝胶被认为是储能设备的准固体电解质，在不可燃性、可忽略的蒸汽压、显著的热稳定性、高离子电导率和宽电化学稳定性窗口等方面具有技术优势。然而，它们在锂金属电池（LMB）中的应用却受到几个问题的阻碍：与锂金属阳极和高压阴极的兼容性差、粘度高和润湿性不足。基于离子凝胶的低浓度电解质虽然在锂+迁移率、粘度、电极润湿性和成本方面具有潜在优势，但却很少受到关注。在这里，我们展示了局部高浓度离子凝胶（LHCI）和稀释局部高浓度离子凝胶（DLHCI）电解质的惊人能力，它们利用非溶解性氟化醚 1,1,2,2-四氟乙基-2,2,3,3-四氟丙基醚实现了高压准固态锂金属电池（QSLMB）。值得注意的是，DLHCI 电解液不仅离子电导率高达 3.93 × 10-3 S cm-1，而且锂镀层/剥离库仑效率超过 99%。此外，当与 4.4 V LiNi0.8Co0.1Mn0.1O2 (NCM811) 和 4.8 V LiNi0.5Mn1.5O4 (LNMO) 搭配使用时，它还能大大提高阳极稳定性。因此，在使用 DLHCI 电解液时，QSLMB 的循环性能得到了显著改善。
{"title":"Dilutedly localized high-concentration ionogel electrolyte enabling high-voltage quasi-solid-state lithium metal batteries","authors":"Shufeng Song, Zongyuan Chen, Shengxian Wang, Fengkun Wei, Serguei V. Savilov, Anji Reddy Polu, Pramod K. Singh, Zhaoqin Liu, Ning Hu","doi":"10.1063/5.0221854","DOIUrl":"https://doi.org/10.1063/5.0221854","url":null,"abstract":"Ionogels, which are being considered as quasi-solid electrolytes for energy-storage devices, exhibited technical superiority in terms of nonflammability, negligible vapor pressure, remarkable thermostability, high ionic conductivity, and broad electrochemical stability window. However, their applications in lithium metal batteries (LMBs) have been hindered by several issues: poor compatibility with Li-metal anodes and high-voltage cathodes, high viscosity, and inadequate wettability. Little attention has been paid to ionogel-based low-concentration electrolytes, despite their potential advantages in terms of Li+ mobility, viscosity, electrode wettability, and cost. Here, we demonstrate the surprising capabilities of localized high-concentration ionogel (LHCI) and dilutedly localized high-concentration ionogel (DLHCI) electrolytes, utilizing the non-solvating fluorinated ether 1,1,2,2-tetrafluoroethyl-2,2,3,3-tetrafluoropropyl ether, to realize high-voltage quasi-solid-state lithium metal batteries (QSLMBs). Notably, the DLHCI electrolyte not only delivers superior ionic conductivity of 3.93 × 10−3 S cm−1 but also provides a high Li plating/stripping Coulombic efficiency exceeding 99%. Moreover, it significantly enhances anodic stability when paired with 4.4 V LiNi0.8Co0.1Mn0.1O2 (NCM811) and 4.8 V LiNi0.5Mn1.5O4 (LNMO). Consequently, substantial improvement in cycling performance of QSLMBs has been realized with the DLHCI electrolyte.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141521404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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