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Conductivity decay in freshly fabricated TFB films 新制备的TFB薄膜的电导率衰减
IF 4 2区 物理与天体物理 Q2 PHYSICS, APPLIED Pub Date : 2026-02-09 DOI: 10.1063/5.0315386
Lihao Liu, Hui Bao, Mingda Zhang, Honghe Yao, Min Yang, Peng Huang, Kai Gu, Cheng Zhu, Yuanping Yi, Haizheng Zhong
Understanding the hole transport layers is fundamental to improve the stability of quantum-dot light-emitting diodes. This study investigates the short-term conductivity decay of freshly fabricated poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl))diphenylamine) (TFB) films under applied voltage. In addition, the conductivity decay of freshly prepared TFB films can be partially recovered after short-term storage. The phenomenon is also observed in other hole transporting materials, such as PVK and PF8Cz. The decay dynamics can be described using the Kohlrausch–Williams–Watts stretched-exponential function. The temperature-dependent relaxation time extracted from the decay curves obeys an Arrhenius law, yielding an activation energy of 0.18 ± 0.03 eV. This value is in good agreement with the calculated reorganization energy associated with the hopping transport of charge carriers. Based on the results, conductivity decay of freshly fabricated TFB films during the initial short-term period can be explained by the coupling between electric field-induced polarization and carrier transport (denoted as polarization–conduction coupling).
了解空穴传输层是提高量子点发光二极管稳定性的基础。本文研究了新制备的聚(9,9-二辛基芴-co- n -(4-(3-甲基丙基))二苯胺(TFB)薄膜在外加电压作用下的短期电导率衰减。此外,新制备的TFB薄膜在短期储存后,电导率衰减可以部分恢复。在PVK和PF8Cz等其他空穴输运材料中也观察到这种现象。衰减动力学可以用Kohlrausch-Williams-Watts拉伸指数函数来描述。从衰变曲线中提取的温度随弛豫时间符合Arrhenius定律,得到的活化能为0.18±0.03 eV。该值与计算得到的载流子跳跃输运的重组能符合得很好。结果表明,新制备的TFB薄膜在初始短期内的电导率衰减可以解释为电场诱导极化和载流子输运之间的耦合(称为极化-传导耦合)。
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引用次数: 0
Supercurrent and multiple Andreev reflections in Ge hut nanowire Josephson junctions 纳米线Josephson结中的超电流和多重Andreev反射
IF 4 2区 物理与天体物理 Q2 PHYSICS, APPLIED Pub Date : 2026-02-09 DOI: 10.1063/5.0302926
Han Gao, Jian-Huan Wang, Ji-Yin Wang, Jian-Jun Zhang, Hongqi Xu
We report an experimental study of induced superconductivity in Ge hut nanowire Josephson junctions. The Ge hut nanowires are grown on prepatterned SiGe ridges via molecular beam epitaxy and Josephson junction devices are fabricated by contacting the nanowires with Al electrodes. Low-temperature current-bias transport measurements of the Josephson junctions are performed and the measurements show that the devices exhibit gate-tunable supercurrent and excess current. The analysis of excess current indicates that the transparency of the Ge hut nanowire Josephson junctions is as high as 85%. Voltage-bias spectroscopy measurements of the devices show multiple Andreev reflections up to the fourth order. With magnetic field and temperature-dependent measurements of the multiple Andreev reflections, the critical field and the critical temperature of the induced superconductivity in the Josephson junctions are extracted to be ∼0.12 T and ∼1.4 K. The success in introducing superconductivity into Ge hut nanowires will stimulate their applications in building advanced quantum processors.
本文报道了在锗纳米线Josephson结中诱导超导性的实验研究。通过分子束外延将Ge hut纳米线生长在预先设计好的SiGe脊上,并将纳米线与Al电极接触制成Josephson结器件。对约瑟夫森结进行了低温偏置电流输运测量,测量结果表明,该器件具有门可调谐的过电流和过电流。过量电流分析表明,Ge hut纳米线Josephson结的透明度高达85%。器件的电压偏置光谱测量显示出高达四阶的多重安德烈夫反射。通过对多重Andreev反射的磁场和温度相关测量,我们提取出约瑟夫森结中诱导超导的临界场和临界温度分别为~ 0.12 T和~ 1.4 K。将超导性引入Ge纳米线的成功将刺激其在构建先进量子处理器方面的应用。
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引用次数: 0
Tuning the phonon dynamics via Sn-resonant impurities assists strong anharmonicity in p -type Zintl Mg3Sb2 通过sn共振杂质调节声子动力学有助于p型Zintl Mg3Sb2的强非谐性
IF 4 2区 物理与天体物理 Q2 PHYSICS, APPLIED Pub Date : 2026-02-09 DOI: 10.1063/5.0310517
S. Priyadharshini, V. Vijay, J. Archana, M. Navaneethan
Mg3Sb2-based Zintl compounds are promising p-type thermoelectric (TE) materials with a hexagonal crystal structure and are considered promising candidates due to their abundance in nature, low cost, and low toxicity. Here, the Sn-substituted p-type Mg3−xZnxSb2-based solid solution was synthesized via spark plasma sintering, and its transport properties were investigated through experimental and theoretical aspects. Sn at Sb sites in Mg1.8Zn1.2Sb2 softens the chemical bonding, and Sn-Sb 5p orbital overlapping introduces resonant states, resulting in an enhanced density of states. The improved carrier concentration of 1.47 × 1019 cm−3 and electrical conductivity of 324 S/cm, with the Seebeck coefficient of 133 μV/K, yielded a maximum power factor of 579.8 μW/mK2 at 753 K. Additionally, Sn doping induced lattice disorders, and point defects led to reduced the sound velocity of 2225 m/s, resulting in a low lattice thermal conductivity of 0.72 W/mK at 753 K. The synergistic effect of an enhanced power factor and suppressed thermal conductivity resulted in a maximum zT of 0.43 at 753 K for Mg1.8Zn1.2Sb1.94Sn0.06. This work underscored the critical role of resonant states and lattice disorders in boosting the TE performance of p-type Mg3−xZnxSb2.
mg3sb2基Zintl化合物是一种具有六方晶体结构的p型热电(TE)材料,由于其丰富、低成本和低毒性而被认为是有前途的候选材料。本文采用火花等离子烧结的方法合成了sn取代的p型Mg3−xznxsb2基固溶体,并从实验和理论两方面对其输运性能进行了研究。Sn在Mg1.8Zn1.2Sb2中Sb位软化了化学键,Sn- sb5p轨道重叠引入共振态,导致态密度增强。在753 K下,载流子浓度为1.47 × 1019 cm−3,电导率为324 S/cm, Seebeck系数为133 μV/K,最大功率因数为579.8 μW/mK2。此外,锡掺杂导致晶格紊乱,点缺陷导致声速降低2225 m/s,导致753 K时晶格热导率低至0.72 W/mK。增强的功率因数和抑制的热导率的协同效应导致Mg1.8Zn1.2Sb1.94Sn0.06在753 K时zT最大值为0.43。这项工作强调了共振态和晶格紊乱在提高p型Mg3−xZnxSb2的TE性能中的关键作用。
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引用次数: 0
Spin–orbit coupling signatures in polycrystalline bismuth thin films 多晶铋薄膜的自旋轨道耦合特征
IF 4 2区 物理与天体物理 Q2 PHYSICS, APPLIED Pub Date : 2026-02-09 DOI: 10.1063/5.0315719
Subhransu Kumar Negi, Rajib Sarkar, Sohini Guin, Naresh Shyaga, Dhavala Suri
Bismuth is recognized as one of the elemental solids with the strongest intrinsic spin–orbit coupling (SOC) and is widely used to induce topological characteristics in hetero-structures, particularly in chalcogenide-based material systems. Precise control over the crystalline quality and phase purity of bismuth is crucial for its characteristic topological features which can be achieved via molecular beam epitaxy (MBE). In this work, we investigate the electronic transport properties of MBE-grown Bi thin films deposited on Si(111) substrates. Robust spin–orbit coupling is manifested through pronounced weak anti-localization features observed under both out-of-plane and in-plane magnetic fields. In addition, a planar Hall response consistent with Rashba-type SOC emerges at room temperature, underscoring the strong interfacial and structural asymmetry in these MBE-grown Bi films. These films display a temperature-driven sign reversal in the Hall carrier concentration, indicating a transition in the dominant carrier type. Collectively, these observations advance the fundamental understanding of SOC-mediated transport in low-dimensional Bi and open avenues for engineering Rashba-dominated states in functional hetero-structures.
铋是公认的具有最强本征自旋轨道耦合(SOC)的单质固体之一,被广泛用于诱导异质结构,特别是硫族化合物基材料体系的拓扑特征。精确控制铋的晶体质量和相纯度对于铋的分子束外延(MBE)可以实现其独特的拓扑特征至关重要。在这项工作中,我们研究了沉积在Si(111)衬底上的mbe生长的Bi薄膜的电子输运性质。在面外和面内磁场下均观察到明显的弱反局域化特征,表现出鲁棒的自旋轨道耦合。此外,在室温下,出现了与rashba型SOC一致的平面霍尔响应,强调了这些mbe生长的Bi薄膜中的强界面和结构不对称性。这些薄膜显示温度驱动的霍尔载流子浓度符号反转,表明主导载流子类型的转变。总的来说,这些观察结果促进了对低维Bi中soc介导转运的基本理解,并为在功能异质结构中设计rashba主导状态开辟了途径。
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引用次数: 0
Harnessing radiation-induced fluctuations in spintronic neuromorphic hardware for energy-efficient aerospace computing 利用辐射引起的自旋电子神经形态硬件波动进行节能航空航天计算
IF 4 2区 物理与天体物理 Q2 PHYSICS, APPLIED Pub Date : 2026-02-09 DOI: 10.1063/5.0303307
Yifan Zhang, Zhihao Zhao, Xinying Wang, Di Wang, Yu Li, Long Liu, Longchao Liu, Fengjun Dong, Biao Pan, Cheng Pan, Yan Sun, Guozhong Xing
The integration of artificial intelligence into space systems faces fundamental challenges in radiation resilience and energy-efficient computation. Here, we present a neuromorphic computing approach that proposes a strategy to transform these challenges into computational advantages via spintronic technology. We developed spin–orbit torque magnetic tunnel junction crossbar array harnesses radiation-induced fluctuations to enhance Hopfield neural network optimization, converting an environmental constraint into a functional benefit. When exposed to heavy ions (e.g., 209Bi23+), the system demonstrates remarkable radiation hardness with only 1.04% tunneling magnetoresistance degradation while maintaining operational stability. Implemented in a 4 Kb array, this neuro-inspired architecture solves the eight-city traveling salesman problem with 95.2% accuracy at 45.06 nJ energy consumption—outperforming conventional radiation-hardened approaches. Such a complementary experimental and simulation approach elaborates that the measured irradiation conductance fluctuations can be mapped to synaptic weights in a Hopfield network model, significantly enhancing its optimization capability. This work corroborates an emerging paradigm for adaptive, energy-efficient nanoscale artificial intelligence hardware that is designed to thrive in extreme environments, with implications for radiation-resilient neuromorphic architectures and edge computing.
将人工智能集成到空间系统中面临着辐射弹性和节能计算方面的根本性挑战。在这里,我们提出了一种神经形态计算方法,提出了一种通过自旋电子技术将这些挑战转化为计算优势的策略。我们开发了自旋轨道转矩磁隧道结横杆阵列,利用辐射引起的波动来增强Hopfield神经网络优化,将环境约束转化为功能效益。当暴露于重离子(如209Bi23+)时,该体系表现出显著的辐射硬度,在保持运行稳定性的同时,隧道磁电阻仅下降1.04%。在一个4kb的阵列中实现,这种神经启发的架构以45.06 nJ的能量消耗以95.2%的准确率解决了八个城市的旅行推销员问题-优于传统的辐射强化方法。这种互补的实验与仿真方法阐述了在Hopfield网络模型中,可以将测量到的辐照电导波动映射到突触权值,从而显著增强其优化能力。这项工作证实了一种新兴的自适应、节能纳米级人工智能硬件范例,这种硬件旨在在极端环境中茁壮成长,对辐射弹性神经形态架构和边缘计算具有重要意义。
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引用次数: 0
Spin accumulation based deep MOKE microscopy 基于自旋积累的深度MOKE显微镜
IF 4 2区 物理与天体物理 Q2 PHYSICS, APPLIED Pub Date : 2026-02-09 DOI: 10.1063/5.0312055
J. C. Rodriguez E., H. Grisk, A. Anadón, H. Singh, G. Malinowski, M. Hehn, J. Curiale, J. Gorchon
Magnetic imaging techniques are widespread critical tools used in fields such as magnetism, spintronics, or even superconductivity. Among them, one of the most versatile methods is the magneto-optical Kerr effect. However, as soon as light is blocked from interacting with the magnetic layer, such as in deeply buried layers, optical techniques become ineffective. In this work, we present a spin accumulation based magneto-optical Kerr effect microscopy technique that enables imaging of a magnetic thin-film covered by thick and opaque metallic layers. The technique is based on the generation and detection of transient spin accumulations that propagate through the thick metallic layer. These spin accumulation signals are directly triggered and detected optically on the same side, lifting any substrate transparency requirements. The spin accumulation signals detected on a Cu layer decay with a characteristic length of 60 nm, much longer than the 12 nm optical penetration depth, allowing for the detection of magnetic contrast with Cu capping layers up to hundreds of nm. This method should enable magnetic imaging in a wide range of experiments where the surface of interest is covered by electrodes.
磁成像技术是广泛应用于磁学、自旋电子学甚至超导等领域的关键工具。其中,最通用的方法之一是磁光克尔效应。然而,一旦光被阻止与磁性层相互作用,比如在深埋层中,光学技术就会失效。在这项工作中,我们提出了一种基于自旋积累的磁光克尔效应显微镜技术,该技术可以对厚而不透明的金属层覆盖的磁性薄膜进行成像。该技术是基于产生和检测通过厚金属层传播的瞬态自旋积累。这些自旋积累信号被直接触发,并在同一侧进行光学检测,从而提高了对衬底透明度的要求。在铜层上检测到的自旋积累信号衰减的特征长度为60 nm,远长于12 nm的光学穿透深度,允许检测到高达数百nm的铜盖层的磁对比。这种方法应该能够在广泛的实验中实现磁成像,其中感兴趣的表面被电极覆盖。
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引用次数: 0
High-throughput cell manipulation using low-frequency quasi-Scholte wave-based acoustofluidics 基于低频准scholte波的声流体的高通量细胞操作
IF 4 2区 物理与天体物理 Q2 PHYSICS, APPLIED Pub Date : 2026-02-09 DOI: 10.1063/5.0307916
Yuan Yu, Jiaqi Liu, Rujun Zhang, Qingying Luo, Si Zheng, Shengnan Yuan, Yufeng Zhou, Hairong Zheng, Feiyan Cai
High-throughput and biocompatible acoustofluidic manipulation of living cells and microparticles is essential for applications in cellular medicine, tissue engineering, and drug screening. Conventional surface acoustic wave (SAW)–based devices have been widely adopted; however, their high operating frequencies limit throughput, and the conversion of SAWs into leaky bulk waves in liquids induces strong acoustic streaming that compromises manipulation stability. Here, we present a low-frequency acoustofluidic device that exploits non-leaky quasi-Scholte waves in a piezoelectric thin plate to achieve high-throughput, stable, two-dimensional manipulation of particles and cells. Numerical simulations and laser Doppler vibrometry measurements confirm robust excitation of the quasi-Scholte mode, revealing evanescent acoustic fields with strong vertical gradients and well-defined in-plane standing waves in liquid. Experiments with microparticles and in vitro cells further demonstrate stable one- and two-dimensional patterning over large areas while maintaining high cell viability. This quasi-Scholte-wave-based acoustofluidic platform provides a reliable, effective, and high-throughput approach for precise manipulation of cells and biomaterials.
在细胞医学、组织工程和药物筛选中,高通量和生物相容性的声流控操作活细胞和微粒是必不可少的。基于表面声波(SAW)的传统器件已被广泛采用;然而,它们的高工作频率限制了吞吐量,并且saw在液体中转化为泄漏体波会引起强烈的声流,从而影响操作稳定性。在这里,我们提出了一种低频声流控装置,该装置利用压电薄板中的非泄漏准肖尔特波来实现高通量,稳定的粒子和细胞二维操作。数值模拟和激光多普勒振动测量证实了准scholte模式的鲁棒激发,揭示了液体中具有强垂直梯度和明确的面内驻波的消失声场。用微粒和体外细胞进行的实验进一步证明,在保持高细胞活力的同时,在大面积上形成稳定的一维和二维图案。这种基于准肖特波的声流体平台为细胞和生物材料的精确操作提供了一种可靠、有效和高通量的方法。
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引用次数: 0
Ultralow contact resistance of 0.058 Ω mm achieved by pulsed sputtering deposition of regrown degenerately doped GaN contacts for AlGaN/GaN high-electron-mobility transistors 通过脉冲溅射沉积再生的退化掺杂GaN触点,实现了AlGaN/GaN高电子迁移率晶体管的超低接触电阻0.058 Ω mm
IF 4 2区 物理与天体物理 Q2 PHYSICS, APPLIED Pub Date : 2026-02-09 DOI: 10.1063/5.0311448
Kohei Ueno, Kaito Fujisawa, Hiroshi Fujioka
Regrown nonalloyed ohmic contacts for AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated using low-temperature pulsed sputtering deposition (PSD) of highly Si-doped degenerate GaN (d-GaN) onto inductively coupled plasma-etched recesses. The regrown d-GaN (thickness: 250 nm) shows a sheet resistance of 7.2 Ω/sq. with a carrier concentration and mobility of 3.4×1020 cm−3 and 100 cm2 V−1 s−1, yielding a total contact resistance of 0.058±0.004 Ω mm. The inherent interface resistance between the PSD-regrown d-GaN and two-dimensional electron gas was estimated using the transfer length method to be 0.033±0.005 Ω mm, which is close to the single-interface quantum injection limit (0.026 Ω mm). The fabricated HEMT devices with 2 μm gate length exhibited good characteristics (maximum drain current density = 850 mA mm−1, maximum transconductance = 0.2 S mm−1, and on-resistance = 2.1 Ω mm). These results indicate that the low-temperature regrowth of nonalloyed d-GaN contacts with ultralow resistance using PSD is a scalable and low-thermal-budget route for future radio frequency transistors.
采用低温脉冲溅射沉积(PSD)技术,在电感耦合等离子体刻蚀凹槽上制备了用于高电子迁移率AlGaN/GaN晶体管(hemt)的再生非合金欧姆触点。再生的d-GaN(厚度:250 nm)的片电阻为7.2 Ω/sq。载流子浓度为3.4×1020 cm−3,迁移率为100 cm2 V−1 s−1,总接触电阻为0.058±0.004 Ω mm。利用转移长度法估计psd再生的d-GaN与二维电子气体之间的固有界面电阻为0.033±0.005 Ω mm,接近单界面量子注入极限(0.026 Ω mm)。所制备的栅极长度为2 μm的HEMT器件具有良好的特性(最大漏极电流密度= 850 mA mm−1,最大跨导率= 0.2 S mm−1,导通电阻= 2.1 Ω mm)。这些结果表明,使用PSD低温再生具有超低电阻的非合金d-GaN触点是未来射频晶体管的可扩展和低热预算路线。
{"title":"Ultralow contact resistance of 0.058 Ω mm achieved by pulsed sputtering deposition of regrown degenerately doped GaN contacts for AlGaN/GaN high-electron-mobility transistors","authors":"Kohei Ueno, Kaito Fujisawa, Hiroshi Fujioka","doi":"10.1063/5.0311448","DOIUrl":"https://doi.org/10.1063/5.0311448","url":null,"abstract":"Regrown nonalloyed ohmic contacts for AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated using low-temperature pulsed sputtering deposition (PSD) of highly Si-doped degenerate GaN (d-GaN) onto inductively coupled plasma-etched recesses. The regrown d-GaN (thickness: 250 nm) shows a sheet resistance of 7.2 Ω/sq. with a carrier concentration and mobility of 3.4×1020 cm−3 and 100 cm2 V−1 s−1, yielding a total contact resistance of 0.058±0.004 Ω mm. The inherent interface resistance between the PSD-regrown d-GaN and two-dimensional electron gas was estimated using the transfer length method to be 0.033±0.005 Ω mm, which is close to the single-interface quantum injection limit (0.026 Ω mm). The fabricated HEMT devices with 2 μm gate length exhibited good characteristics (maximum drain current density = 850 mA mm−1, maximum transconductance = 0.2 S mm−1, and on-resistance = 2.1 Ω mm). These results indicate that the low-temperature regrowth of nonalloyed d-GaN contacts with ultralow resistance using PSD is a scalable and low-thermal-budget route for future radio frequency transistors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"36 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146160565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In situ analysis of SiO2 films etched under cryogenic conditions using H2/F2/Ar gas mixture plasma 低温条件下H2/F2/Ar混合气体等离子体刻蚀SiO2薄膜的原位分析
IF 4 2区 物理与天体物理 Q2 PHYSICS, APPLIED Pub Date : 2026-02-09 DOI: 10.1063/5.0303879
Yuma Kato, Junji Kataoka, Ryo Saito, Daiki Iino, Kazuaki Kurihara, Tetsuya Sato, Hiroyuki Fukumizu
High aspect ratio hole etching processes require high-speed etching of SiO2 and Si3N4 films. Cryogenic etching significantly increases the etch rates of these two films by lowering the substrate temperature. However, the etching behavior and mechanisms in the temperature range below −70 °C remain unclear. In this work, we investigate the etching behavior of blanket SiO2 films, from 25 to −200 °C, and examine the mechanisms through in situ analyses. Our results show that the etch rate at −100 °C is approximately 3.2 times higher than that at 25 °C, and is associated with the highest etching efficiency in our experiments. This enhancement in the etch rate is attributed to the co-adsorption of H2O and HF, which increases the number of etchants on the SiO2 surface. At temperatures lower than −100 °C, the solidification of H2O reduces the co-adsorption of HF, decreasing the etch rate. At temperatures below −150 °C, the etch rate declines further, owing to the reduced volatility of the reaction product SiF4. These findings provide valuable insights for optimizing etching processes under cryogenic conditions.
高纵横比孔刻蚀工艺要求高速刻蚀SiO2和Si3N4薄膜。低温刻蚀通过降低衬底温度,显著提高了这两种薄膜的刻蚀速率。然而,在- 70°C以下的温度范围内的蚀刻行为和机制尚不清楚。在这项工作中,我们研究了毯状SiO2薄膜在25至- 200°C的蚀刻行为,并通过原位分析研究了其机制。我们的研究结果表明,在- 100°C下的蚀刻速率大约是25°C时的3.2倍,并且在我们的实验中具有最高的蚀刻效率。腐蚀速率的提高是由于H2O和HF的共吸附,增加了SiO2表面的腐蚀剂数量。在低于- 100℃的温度下,H2O的凝固减少了HF的共吸附,降低了蚀刻速率。当温度低于- 150°C时,由于反应产物SiF4的挥发性降低,腐蚀速率进一步下降。这些发现为优化低温条件下的蚀刻工艺提供了有价值的见解。
{"title":"In situ analysis of SiO2 films etched under cryogenic conditions using H2/F2/Ar gas mixture plasma","authors":"Yuma Kato, Junji Kataoka, Ryo Saito, Daiki Iino, Kazuaki Kurihara, Tetsuya Sato, Hiroyuki Fukumizu","doi":"10.1063/5.0303879","DOIUrl":"https://doi.org/10.1063/5.0303879","url":null,"abstract":"High aspect ratio hole etching processes require high-speed etching of SiO2 and Si3N4 films. Cryogenic etching significantly increases the etch rates of these two films by lowering the substrate temperature. However, the etching behavior and mechanisms in the temperature range below −70 °C remain unclear. In this work, we investigate the etching behavior of blanket SiO2 films, from 25 to −200 °C, and examine the mechanisms through in situ analyses. Our results show that the etch rate at −100 °C is approximately 3.2 times higher than that at 25 °C, and is associated with the highest etching efficiency in our experiments. This enhancement in the etch rate is attributed to the co-adsorption of H2O and HF, which increases the number of etchants on the SiO2 surface. At temperatures lower than −100 °C, the solidification of H2O reduces the co-adsorption of HF, decreasing the etch rate. At temperatures below −150 °C, the etch rate declines further, owing to the reduced volatility of the reaction product SiF4. These findings provide valuable insights for optimizing etching processes under cryogenic conditions.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"224 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146160127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and ferroelectric properties of sputter-epitaxial ScAlN on GaN grown at various temperatures 不同温度下氮化镓溅射外延ScAlN的结构和铁电性能
IF 4 2区 物理与天体物理 Q2 PHYSICS, APPLIED Pub Date : 2026-02-09 DOI: 10.1063/5.0313954
Sawaki Sato, Yusuke Wakamoto, Takuya Maeda, Hiroshi Funakubo, Kohei Ueno, Hiroshi Fujioka, Kazuhisa Ikeda, Atsushi Kobayashi
ScAlN is a III-nitride ferroelectric material that has attracted considerable interest for its large remanent polarization, high thermal stability, and compatibility with GaN-based device platforms, and its properties strongly depend on growth conditions. In this study, ScAlN films were grown on Si-doped n-GaN/AlN/sapphire substrates by sputter epitaxy at growth temperatures of 420–675 °C, and their structural and ferroelectric characteristics were systematically investigated. X-ray diffraction and reciprocal space mapping revealed that the a-axis lattice constant increased, but the c-axis lattice constant simultaneously decreased, at growth temperatures above approximately 650 °C, indicating a temperature-induced modification of the ScAlN lattice. Positive-up–negative-down measurements showed a significant leakage current at temperatures above 550 °C, which prevented the saturation of the remanent polarization in the polarization–electric field characteristics. At lower growth temperatures, the films exhibited remanent polarization and coercive fields comparable to those reported for high-quality ScAlN films grown on GaN by molecular-beam epitaxy and metalorganic chemical vapor deposition. This result demonstrates that low-temperature sputter epitaxy can reproduce the intrinsic ferroelectric switching behavior of ScAlN. Thus, low-temperature sputter epitaxy effectively suppresses the leakage current and enables reliable ferroelectric switching, providing useful guidelines for optimizing ScAlN deposition processes for ferroelectric device applications.
ScAlN是一种iii -氮化铁电材料,由于其大残余极化,高热稳定性和与gan基器件平台的兼容性而引起了相当大的兴趣,其性能强烈依赖于生长条件。在420 ~ 675℃的生长温度下,通过溅射外延在si掺杂的n-GaN/AlN/蓝宝石衬底上生长ScAlN薄膜,并对其结构和铁电特性进行了系统的研究。x射线衍射和倒易空间映射显示,在650℃以上的生长温度下,a轴晶格常数增加,而C轴晶格常数同时降低,表明温度引起了ScAlN晶格的修饰。在高于550°C的温度下,正向上负向下测量显示出显著的泄漏电流,这阻止了极化电场特性中剩余极化的饱和。在较低的生长温度下,薄膜表现出与分子束外延和金属有机化学气相沉积在GaN上生长的高质量ScAlN薄膜相当的剩余极化和矫顽力场。这一结果表明,低温溅射外延可以再现ScAlN的铁电开关特性。因此,低温溅射外延有效地抑制了漏电流,实现了可靠的铁电开关,为优化铁电器件应用的ScAlN沉积工艺提供了有用的指导。
{"title":"Structural and ferroelectric properties of sputter-epitaxial ScAlN on GaN grown at various temperatures","authors":"Sawaki Sato, Yusuke Wakamoto, Takuya Maeda, Hiroshi Funakubo, Kohei Ueno, Hiroshi Fujioka, Kazuhisa Ikeda, Atsushi Kobayashi","doi":"10.1063/5.0313954","DOIUrl":"https://doi.org/10.1063/5.0313954","url":null,"abstract":"ScAlN is a III-nitride ferroelectric material that has attracted considerable interest for its large remanent polarization, high thermal stability, and compatibility with GaN-based device platforms, and its properties strongly depend on growth conditions. In this study, ScAlN films were grown on Si-doped n-GaN/AlN/sapphire substrates by sputter epitaxy at growth temperatures of 420–675 °C, and their structural and ferroelectric characteristics were systematically investigated. X-ray diffraction and reciprocal space mapping revealed that the a-axis lattice constant increased, but the c-axis lattice constant simultaneously decreased, at growth temperatures above approximately 650 °C, indicating a temperature-induced modification of the ScAlN lattice. Positive-up–negative-down measurements showed a significant leakage current at temperatures above 550 °C, which prevented the saturation of the remanent polarization in the polarization–electric field characteristics. At lower growth temperatures, the films exhibited remanent polarization and coercive fields comparable to those reported for high-quality ScAlN films grown on GaN by molecular-beam epitaxy and metalorganic chemical vapor deposition. This result demonstrates that low-temperature sputter epitaxy can reproduce the intrinsic ferroelectric switching behavior of ScAlN. Thus, low-temperature sputter epitaxy effectively suppresses the leakage current and enables reliable ferroelectric switching, providing useful guidelines for optimizing ScAlN deposition processes for ferroelectric device applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"4 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146160124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Applied Physics Letters
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