Pub Date : 2020-10-30DOI: 10.1103/PHYSREVRESEARCH.3.013260
Zlata Fedorova, C. Dauer, A. Sidorenko, S. Eggert, Johann Kroha, S. Linden
We demonstrate transport rectification in a hermitian Hamiltonian quantum ratchet by a dissipative, dynamic impurity. While the bulk of the ratchet supports transport in both directions, the properly designed loss function of the local impurity acts as a direction-dependent filter for the moving states. We analyse this scheme theoretically by making use of Floquet-S-Matrix theory. In addition, we provide the direct experimental observation of one-way transmittance in periodically modulated plasmonic waveguide arrays containing a local impurity with engineered losses.
{"title":"Dissipation engineered directional filter for quantum ratchets","authors":"Zlata Fedorova, C. Dauer, A. Sidorenko, S. Eggert, Johann Kroha, S. Linden","doi":"10.1103/PHYSREVRESEARCH.3.013260","DOIUrl":"https://doi.org/10.1103/PHYSREVRESEARCH.3.013260","url":null,"abstract":"We demonstrate transport rectification in a hermitian Hamiltonian quantum ratchet by a dissipative, dynamic impurity. While the bulk of the ratchet supports transport in both directions, the properly designed loss function of the local impurity acts as a direction-dependent filter for the moving states. We analyse this scheme theoretically by making use of Floquet-S-Matrix theory. In addition, we provide the direct experimental observation of one-way transmittance in periodically modulated plasmonic waveguide arrays containing a local impurity with engineered losses.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73156372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-29DOI: 10.1103/PHYSREVRESEARCH.3.013181
K. Villegas Rosales, S. Singh, M. Ma, M. S. Hossain, Y. Chung, L. Pfeiffer, K. West, K. Baldwin, M. Shayegan
What is the fate of the ground state of a two-dimensional electron system (2DES) at very low Landau level filling factors ($nu$) where interaction reigns supreme? An ordered array of electrons, the so-called Wigner crystal, has long been believed to be the answer. It was in fact the search for the elusive Wigner crystal that led to the discovery of an unexpected, incompressible liquid state, namely the fractional quantum Hall state at $nu=1/3$. Understanding the competition between the liquid and solid ground states has since remained an active field of fundamental research. Here we report experimental data for a new two-dimensional system where the electrons are confined to an AlAs quantum well. The exceptionally high quality of the samples and the large electron effective mass allow us to determine the liquid-solid phase diagram for the two-dimensional electrons in a large range of filling factors near $simeq 1/3$ and $simeq 1/5$. The data and their comparison with an available theoretical phase diagram reveal the crucial role of Landau level mixing and finite electron layer thickness in determining the prevailing ground states.
{"title":"Competition between fractional quantum Hall liquid and Wigner solid at small fillings: Role of layer thickness and Landau level mixing","authors":"K. Villegas Rosales, S. Singh, M. Ma, M. S. Hossain, Y. Chung, L. Pfeiffer, K. West, K. Baldwin, M. Shayegan","doi":"10.1103/PHYSREVRESEARCH.3.013181","DOIUrl":"https://doi.org/10.1103/PHYSREVRESEARCH.3.013181","url":null,"abstract":"What is the fate of the ground state of a two-dimensional electron system (2DES) at very low Landau level filling factors ($nu$) where interaction reigns supreme? An ordered array of electrons, the so-called Wigner crystal, has long been believed to be the answer. It was in fact the search for the elusive Wigner crystal that led to the discovery of an unexpected, incompressible liquid state, namely the fractional quantum Hall state at $nu=1/3$. Understanding the competition between the liquid and solid ground states has since remained an active field of fundamental research. Here we report experimental data for a new two-dimensional system where the electrons are confined to an AlAs quantum well. The exceptionally high quality of the samples and the large electron effective mass allow us to determine the liquid-solid phase diagram for the two-dimensional electrons in a large range of filling factors near $simeq 1/3$ and $simeq 1/5$. The data and their comparison with an available theoretical phase diagram reveal the crucial role of Landau level mixing and finite electron layer thickness in determining the prevailing ground states.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78239350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-28DOI: 10.1103/PhysRevA.103.063518
V. Brosco, L. Pilozzi, R. Fazio, C. Conti
Non-abelian gauge fields emerge naturally in the description of adiabatically evolving quantum systems having degenerate levels. Here we show that they also play a role in Thouless pumping in the presence of degenerate bands. To this end we consider a photonic Lieb lattice having two degenerate non-dispersive modes and we show that, when the lattice parameters are slowly modulated, the propagation of the photons bear the fingerprints of the underlying non-abelian gauge structure. The non-dispersive character of the bands enables a high degree of control on photon propagation. Our work paves the way to the generation and detection of non-abelian gauge fields in photonic and optical lattices.
{"title":"Non-Abelian Thouless pumping in a photonic lattice","authors":"V. Brosco, L. Pilozzi, R. Fazio, C. Conti","doi":"10.1103/PhysRevA.103.063518","DOIUrl":"https://doi.org/10.1103/PhysRevA.103.063518","url":null,"abstract":"Non-abelian gauge fields emerge naturally in the description of adiabatically evolving quantum systems having degenerate levels. Here we show that they also play a role in Thouless pumping in the presence of degenerate bands. To this end we consider a photonic Lieb lattice having two degenerate non-dispersive modes and we show that, when the lattice parameters are slowly modulated, the propagation of the photons bear the fingerprints of the underlying non-abelian gauge structure. The non-dispersive character of the bands enables a high degree of control on photon propagation. Our work paves the way to the generation and detection of non-abelian gauge fields in photonic and optical lattices.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76407209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-27DOI: 10.1103/PHYSREVB.103.115431
Xueheng Kuang, Z. Zhan, S. Yuan
Twisted bilayer graphene with tiny rotation angles have drawn significant attention due to the observation of the unconventional superconducting and correlated insulating behaviors. In this paper, we employ a full tight-binding model to investigate collective excitations in twisted bilayer graphene near magic angle. The polarization function is obtained from the tight-binding propagation method without diagonalization of the Hamiltonian matrix. With the atomic relaxation considered in the simulation, damped and undamped interband plasmon modes are discovered near magic angle under both room temperature and superconductivity transition temperature. In particular, an undamped plasmon mode in narrow bands can be directly probed in magic angle twisted bilayer graphene at superconductivity transition temperature. The undamped plasmon mode is tunable with angles and gradually fades away with both temperature and chemical potential. In practice, the flat bands in twisted bilayer graphene can be detected by exploring the collective plasmons from the measured energy loss function.
{"title":"Collective excitations and flat-band plasmon in twisted bilayer graphene near the magic angle","authors":"Xueheng Kuang, Z. Zhan, S. Yuan","doi":"10.1103/PHYSREVB.103.115431","DOIUrl":"https://doi.org/10.1103/PHYSREVB.103.115431","url":null,"abstract":"Twisted bilayer graphene with tiny rotation angles have drawn significant attention due to the observation of the unconventional superconducting and correlated insulating behaviors. In this paper, we employ a full tight-binding model to investigate collective excitations in twisted bilayer graphene near magic angle. The polarization function is obtained from the tight-binding propagation method without diagonalization of the Hamiltonian matrix. With the atomic relaxation considered in the simulation, damped and undamped interband plasmon modes are discovered near magic angle under both room temperature and superconductivity transition temperature. In particular, an undamped plasmon mode in narrow bands can be directly probed in magic angle twisted bilayer graphene at superconductivity transition temperature. The undamped plasmon mode is tunable with angles and gradually fades away with both temperature and chemical potential. In practice, the flat bands in twisted bilayer graphene can be detected by exploring the collective plasmons from the measured energy loss function.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87934804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-27DOI: 10.1103/PHYSREVB.103.115309
E. Cherotchenko, H. Sigurdsson, Alexis Askitopoulos, A. Nalitov
A condensed matter platform for analogue simulation of complex two-dimensional molecular bonding configurations, based on optically trapped exciton-polariton condensates is proposed. The stable occupation of polariton condensates in the excited states of their optically configurable potential traps permits emulation of excited atomic orbitals. A classical mean field model describing the dissipative coupling mechanism between p-orbital condensates is derived, identifying lowest threshold condensation solutions as a function of trap parameters corresponding to bound and antibound $pi$ and $sigma$ bonding configurations, similar to those in quantum chemistry.
{"title":"Optically controlled polariton condensate molecules","authors":"E. Cherotchenko, H. Sigurdsson, Alexis Askitopoulos, A. Nalitov","doi":"10.1103/PHYSREVB.103.115309","DOIUrl":"https://doi.org/10.1103/PHYSREVB.103.115309","url":null,"abstract":"A condensed matter platform for analogue simulation of complex two-dimensional molecular bonding configurations, based on optically trapped exciton-polariton condensates is proposed. The stable occupation of polariton condensates in the excited states of their optically configurable potential traps permits emulation of excited atomic orbitals. A classical mean field model describing the dissipative coupling mechanism between p-orbital condensates is derived, identifying lowest threshold condensation solutions as a function of trap parameters corresponding to bound and antibound $pi$ and $sigma$ bonding configurations, similar to those in quantum chemistry.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87454024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Banszerus, A. Rothstein, E. Icking, S. Möller, K. Watanabe, T. Taniguchi, C. Stampfer, C. Volk
We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 to 4 GHz and the mutual capacitive coupling between 0.2 and 0.6 meV, independently of the charge occupation of the quantum dots. The charging energy and hence the dot size remains nearly unchanged. The tuning range of the tunnel coupling covers the operating regime of typical silicon and GaAs spin qubit devices.
{"title":"Tunable interdot coupling in few-electron bilayer graphene double quantum dots","authors":"L. Banszerus, A. Rothstein, E. Icking, S. Möller, K. Watanabe, T. Taniguchi, C. Stampfer, C. Volk","doi":"10.1063/5.0035300","DOIUrl":"https://doi.org/10.1063/5.0035300","url":null,"abstract":"We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 to 4 GHz and the mutual capacitive coupling between 0.2 and 0.6 meV, independently of the charge occupation of the quantum dots. The charging energy and hence the dot size remains nearly unchanged. The tuning range of the tunnel coupling covers the operating regime of typical silicon and GaAs spin qubit devices.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73022202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Frotanpour, J. Woods, B. Farmer, A. Kaphle, L. E. De Long
We present the dynamic response of a connected Kagome artificial spin ice with emphasis on the effect of the vertex magnetization configuration on the mode characteristics. We use broadband ferromagnetic resonance (FMR) spectroscopy and micromagnetic simulations to identify and characterize resonant modes. We find the mode frequencies of elongated, single-domain film segments not only depend on the orientation of their easy-axis with respect to the applied magnetic field, but also depend on the vertex magnetization configuration, which suggests control over the FMR mode can be accomplished by altering the vertex magnetization. Moreover, we study differences between the vertex center mode (VCM) and the localized domain wall (LDW) mode. We show that the LDW mode acts as a signature of the domain wall (DW) nucleation process and the DW dynamics active during segment reversal events. The results show the VCM and LDW modes can be controlled using a field protocol, which has important implications for applications in magnonic and spintronic devices.
{"title":"Vertex dependent dynamic response of a connected Kagome artificial spin ice","authors":"A. Frotanpour, J. Woods, B. Farmer, A. Kaphle, L. E. De Long","doi":"10.1063/5.0035195","DOIUrl":"https://doi.org/10.1063/5.0035195","url":null,"abstract":"We present the dynamic response of a connected Kagome artificial spin ice with emphasis on the effect of the vertex magnetization configuration on the mode characteristics. We use broadband ferromagnetic resonance (FMR) spectroscopy and micromagnetic simulations to identify and characterize resonant modes. We find the mode frequencies of elongated, single-domain film segments not only depend on the orientation of their easy-axis with respect to the applied magnetic field, but also depend on the vertex magnetization configuration, which suggests control over the FMR mode can be accomplished by altering the vertex magnetization. Moreover, we study differences between the vertex center mode (VCM) and the localized domain wall (LDW) mode. We show that the LDW mode acts as a signature of the domain wall (DW) nucleation process and the DW dynamics active during segment reversal events. The results show the VCM and LDW modes can be controlled using a field protocol, which has important implications for applications in magnonic and spintronic devices.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80129437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mahshid Alamdar, Thomas Leonard, Can Cui, Bishweshwor P. Rimal, Lin Xue, Otitoaleke G. Akinola, T. Patrick Xiao, J. Friedman, C. Bennett, M. Marinella, J. Incorvia
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction (MTJ) memory elements can be used for computation by manipulating a domain wall (DW), a transition region between magnetic domains. But, these devices have suffered from challenges: spin transfer torque (STT) switching of a DW requires high current, and the multiple etch steps needed to create an MTJ pillar on top of a DW track has led to reduced tunnel magnetoresistance (TMR). These issues have limited experimental study of devices and circuits. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction (DW-MTJ) in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy (PMA), spin-orbit torque (SOT) switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 164%, resistance-area product RA = 31 {Omega}-{mu}m^2, close to the RA of the unpatterned film, and lower switching current density compared to using spin transfer torque. A two-device circuit shows bit propagation between devices. Device initialization variation in switching voltage is shown to be curtailed to 7% by controlling the DW initial position, which we show corresponds to 96% accuracy in a DW-MTJ full adder simulation. These results make strides in using MTJs and DWs for in-memory and neuromorphic computing applications.
传统计算，特别是在完成数据密集型和实时任务方面存在着一些紧迫的问题，这促使内存计算设备的发展，以存储信息和执行计算。磁隧道结(MTJ)存储元件可以通过操纵磁畴壁(DW)进行计算，DW是磁畴之间的过渡区域。但是，这些器件面临着挑战:DW的自旋转移扭矩(STT)开关需要高电流，并且在DW轨道顶部创建MTJ柱所需的多个蚀刻步骤导致隧道磁阻(TMR)降低。这些问题限制了器件和电路的实验研究。在这里，我们研究了三端畴壁磁隧道结(DW-MTJ)内存计算器件的原型，该器件可以通过垂直磁各向异性(PMA)、自旋-轨道转矩(SOT)开关和优化的光刻工艺来解决数据处理瓶颈和解决这些挑战，从而产生平均器件隧道磁电阻TMR = 164%, resistance-area product RA = 31 {Omega}-{mu}m^2, close to the RA of the unpatterned film, and lower switching current density compared to using spin transfer torque. A two-device circuit shows bit propagation between devices. Device initialization variation in switching voltage is shown to be curtailed to 7% by controlling the DW initial position, which we show corresponds to 96% accuracy in a DW-MTJ full adder simulation. These results make strides in using MTJs and DWs for in-memory and neuromorphic computing applications.
{"title":"Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing","authors":"Mahshid Alamdar, Thomas Leonard, Can Cui, Bishweshwor P. Rimal, Lin Xue, Otitoaleke G. Akinola, T. Patrick Xiao, J. Friedman, C. Bennett, M. Marinella, J. Incorvia","doi":"10.1063/5.0038521","DOIUrl":"https://doi.org/10.1063/5.0038521","url":null,"abstract":"There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction (MTJ) memory elements can be used for computation by manipulating a domain wall (DW), a transition region between magnetic domains. But, these devices have suffered from challenges: spin transfer torque (STT) switching of a DW requires high current, and the multiple etch steps needed to create an MTJ pillar on top of a DW track has led to reduced tunnel magnetoresistance (TMR). These issues have limited experimental study of devices and circuits. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction (DW-MTJ) in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy (PMA), spin-orbit torque (SOT) switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 164%, resistance-area product RA = 31 {Omega}-{mu}m^2, close to the RA of the unpatterned film, and lower switching current density compared to using spin transfer torque. A two-device circuit shows bit propagation between devices. Device initialization variation in switching voltage is shown to be curtailed to 7% by controlling the DW initial position, which we show corresponds to 96% accuracy in a DW-MTJ full adder simulation. These results make strides in using MTJs and DWs for in-memory and neuromorphic computing applications.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88733652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-25DOI: 10.1103/physrevb.102.184413
Jun Zheng, A. Brataas, M. Kläui, A. Qaiumzadeh
We develop a theory to compute the domain-wall magnetoresistance (DWMR) in antiferromagnetic (AFM) metals with different spin structures. In the diffusive transport regime, the DWMR can be either {it negative} or positive depending on the domain-wall orientation and spin structure. In contrast, when the transport is in the ballistic regime, the DWMR is always positive, and the magnitude depends on the width and orientation of the domain wall. Our results pave the way of using electrical measurements for probing the internal spin structure in antiferromagnetic metals.
{"title":"Theory of domain-wall magnetoresistance in metallic antiferromagnets","authors":"Jun Zheng, A. Brataas, M. Kläui, A. Qaiumzadeh","doi":"10.1103/physrevb.102.184413","DOIUrl":"https://doi.org/10.1103/physrevb.102.184413","url":null,"abstract":"We develop a theory to compute the domain-wall magnetoresistance (DWMR) in antiferromagnetic (AFM) metals with different spin structures. In the diffusive transport regime, the DWMR can be either {it negative} or positive depending on the domain-wall orientation and spin structure. In contrast, when the transport is in the ballistic regime, the DWMR is always positive, and the magnitude depends on the width and orientation of the domain wall. Our results pave the way of using electrical measurements for probing the internal spin structure in antiferromagnetic metals.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75881657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-23DOI: 10.21468/SCIPOSTPHYS.10.3.069
Keith R. Fratus, Camille Le Calonnec, R. Jalabert, G. Weick, D. Weinmann
We demonstrate the emergence of classical features in electronic quantum transport for the scanning gate microscopy response in a cavity defined by a quantum point contact and a micron-sized circular reflector. The branches in electronic flow characteristic of a quantum point contact opening on a two-dimensional electron gas with weak disorder are folded by the reflector, yielding a complex spatial pattern. Considering the deflection of classical trajectories by the scanning gate tip allows to establish simple relationships of the scanning pattern, which are in agreement with recent experimental findings.
{"title":"Signatures of folded branches in the scanning gate microscopy of ballistic electronic cavities","authors":"Keith R. Fratus, Camille Le Calonnec, R. Jalabert, G. Weick, D. Weinmann","doi":"10.21468/SCIPOSTPHYS.10.3.069","DOIUrl":"https://doi.org/10.21468/SCIPOSTPHYS.10.3.069","url":null,"abstract":"We demonstrate the emergence of classical features in electronic quantum transport for the scanning gate microscopy response in a cavity defined by a quantum point contact and a micron-sized circular reflector. The branches in electronic flow characteristic of a quantum point contact opening on a two-dimensional electron gas with weak disorder are folded by the reflector, yielding a complex spatial pattern. Considering the deflection of classical trajectories by the scanning gate tip allows to establish simple relationships of the scanning pattern, which are in agreement with recent experimental findings.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88566491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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