N. Al-Mamun, M. Rasel, Douglas E. Wolfe, A. Haque, R. Schoell, K. Hattar, Seung Ho Ryu, Seong Keun Kim
The study investigates the mitigation of radiation damage on p‐type SnO thin‐film transistors (TFTs) with a fast, room‐temperature annealing process. Atomic layer deposition is utilized to fabricate bottom‐gate TFTs of high‐quality p‐type SnO layers. After 2.8 MeV Au4+ irradiation at a fluence level of 5.2 × 1012 ions cm−2, the output drain current and on/off current ratio (Ion/Ioff) decrease by more than one order of magnitude, field‐effect mobility (μFE) reduces more than four times, and subthreshold swing (SS) increases more than four times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high‐resolution micro‐Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). A technique is demonstrated to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low‐duty‐cycle high‐density pulsed current. At a pulsed current density of 4.0 × 105 A cm−2, approximately four times increase in Ion/Ioff is observed, 41% increase in μFE, and 20% decrease in the SS of the irradiated TFTs, suggesting effectiveness of the new annealing technique.
本文研究了一种快速室温退火工艺对p型SnO薄膜晶体管(TFTs)辐射损伤的抑制作用。利用原子层沉积技术制备了高质量p型SnO层的底栅tft。当辐照量为5.2 × 1012离子cm−2时，输出漏极电流和开关电流比(Ion/Ioff)降低了一个数量级以上，场效应迁移率(μFE)降低了4倍以上，亚阈值摆幅(SS)增加了4倍以上，阈值电压呈负移。观察到的降解是由于表面粗糙度和缺陷密度的增加，这一点通过扫描电子显微镜(SEM)、高分辨率微拉曼和带有几何相分析(GPA)的透射电子显微镜(TEM)得到了证实。在室温下，利用低占空比高密度脉冲电流获得的电子风力(EWF)，可以在不到一分钟的时间内恢复器件性能。在脉冲电流密度为4.0 × 105 a cm−2的情况下，辐照后的tft的离子/光灭比提高了约4倍，μFE提高了41%，SS降低了20%，表明了新退火技术的有效性。
{"title":"Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature","authors":"N. Al-Mamun, M. Rasel, Douglas E. Wolfe, A. Haque, R. Schoell, K. Hattar, Seung Ho Ryu, Seong Keun Kim","doi":"10.1002/pssa.202300392","DOIUrl":"https://doi.org/10.1002/pssa.202300392","url":null,"abstract":"The study investigates the mitigation of radiation damage on p‐type SnO thin‐film transistors (TFTs) with a fast, room‐temperature annealing process. Atomic layer deposition is utilized to fabricate bottom‐gate TFTs of high‐quality p‐type SnO layers. After 2.8 MeV Au4+ irradiation at a fluence level of 5.2 × 1012 ions cm−2, the output drain current and on/off current ratio (Ion/Ioff) decrease by more than one order of magnitude, field‐effect mobility (μFE) reduces more than four times, and subthreshold swing (SS) increases more than four times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high‐resolution micro‐Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). A technique is demonstrated to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low‐duty‐cycle high‐density pulsed current. At a pulsed current density of 4.0 × 105 A cm−2, approximately four times increase in Ion/Ioff is observed, 41% increase in μFE, and 20% decrease in the SS of the irradiated TFTs, suggesting effectiveness of the new annealing technique.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85555289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Herein, the influence of stresses on parameters of 2D electron gas (2DEG) in AlGaN/GaN high‐electron‐mobility transistor‐type heterostructures grown on sapphire substrate by metal–organic vapor‐phase epitaxy technique is presented. The as‐grown heterostructures as well as Schottky diodes fabricated in them are subjected to compressive stress. The custom stressing system induces a homogeneous state of compressive stress in the samples without causing electrical side effects. Time‐dependent heterostructures characteristics of electron concentration, electron mobility, and bandgap width are measured. Additionally, in the case of the Schottky diodes, current–voltage characteristics and charge flow in the contact are measured. The measurements are performed in cycles with and without applied stresses to determine the repeatability of effects and to separate the influence of thermal and electrical factors. Additionally, electrical simulations are performed using APSYS software package. The obtained results lead to conclusions that are different to those reported in existing literature, especially in regard to the time dependence of the measured effects, that is essential to proper explanation. It is also shown that a key role in the change of 2DEG parameters is played by deep surface states and interlayer piezoelectric effects. Finally, the anisotropic character of the derived relations is demonstrated.
{"title":"Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures","authors":"B. Paszkiewicz, Bogdan Paszkiewicz, A. Dziedzic","doi":"10.1002/pssa.202100078","DOIUrl":"https://doi.org/10.1002/pssa.202100078","url":null,"abstract":"Herein, the influence of stresses on parameters of 2D electron gas (2DEG) in AlGaN/GaN high‐electron‐mobility transistor‐type heterostructures grown on sapphire substrate by metal–organic vapor‐phase epitaxy technique is presented. The as‐grown heterostructures as well as Schottky diodes fabricated in them are subjected to compressive stress. The custom stressing system induces a homogeneous state of compressive stress in the samples without causing electrical side effects. Time‐dependent heterostructures characteristics of electron concentration, electron mobility, and bandgap width are measured. Additionally, in the case of the Schottky diodes, current–voltage characteristics and charge flow in the contact are measured. The measurements are performed in cycles with and without applied stresses to determine the repeatability of effects and to separate the influence of thermal and electrical factors. Additionally, electrical simulations are performed using APSYS software package. The obtained results lead to conclusions that are different to those reported in existing literature, especially in regard to the time dependence of the measured effects, that is essential to proper explanation. It is also shown that a key role in the change of 2DEG parameters is played by deep surface states and interlayer piezoelectric effects. Finally, the anisotropic character of the derived relations is demonstrated.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81663086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Interface Analysis of CuO/ZnO Heterojunction for Optoelectronic Applications: An Experimental and Simulation Study","authors":"Arige Sumanth, V. Mishra, M. Rao, Tejendra Dixit","doi":"10.1002/pssa.202300256","DOIUrl":"https://doi.org/10.1002/pssa.202300256","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79624676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ying Chen, Peng Wang, Ruishan Xie, Leizhi Jin, Haibin Liu
Compliant sensors have drawn considerable interests in human–robot interactions. However, it is still challenging to obtain reliable and reproducible performance at reduced costs, especially for scaled‐up sensing applications. This work investigates the piezoresistive performance of a low‐cost, scalable sensor, which is made by spray coating exfoliated graphite natural rubber latex composites (EG/latex) over an elastomeric substrate. The EG/latex sensor provides a uniform distribution in the sheet resistance (variation below 4%) over a large 10 cm × 10 cm area. The stabilized piezoresistive response under cyclic tests is found highly related to both the filler concentration and the strain region. The 8 wt% and the 10 wt% sensors show nonlinear piezoresistive response, while the 25 wt% sensor exhibits the best linearity with a high gauge factor (7.6) and the lowest hysteresis (0.043) under a maximum strain of 60%. The distinct piezoresistive behavior is found attributed to the different levels of microbreakage under the applied strain. Scalable sensing performance is demonstrated on a hand‐size glove spray‐coated with 25 wt% EG/latex. Effective localization of contacts over the continuous sensing glove is achieved via the technique of electrical impedance tomography, validating the potential of the cost‐competitive EG/latex sensor for scalable sensing applications.
{"title":"Piezoresistive Performance of a Compliant Scalable Sensor Made of Low‐Cost Exfoliated Graphite Polymer Composites","authors":"Ying Chen, Peng Wang, Ruishan Xie, Leizhi Jin, Haibin Liu","doi":"10.1002/pssa.202300289","DOIUrl":"https://doi.org/10.1002/pssa.202300289","url":null,"abstract":"Compliant sensors have drawn considerable interests in human–robot interactions. However, it is still challenging to obtain reliable and reproducible performance at reduced costs, especially for scaled‐up sensing applications. This work investigates the piezoresistive performance of a low‐cost, scalable sensor, which is made by spray coating exfoliated graphite natural rubber latex composites (EG/latex) over an elastomeric substrate. The EG/latex sensor provides a uniform distribution in the sheet resistance (variation below 4%) over a large 10 cm × 10 cm area. The stabilized piezoresistive response under cyclic tests is found highly related to both the filler concentration and the strain region. The 8 wt% and the 10 wt% sensors show nonlinear piezoresistive response, while the 25 wt% sensor exhibits the best linearity with a high gauge factor (7.6) and the lowest hysteresis (0.043) under a maximum strain of 60%. The distinct piezoresistive behavior is found attributed to the different levels of microbreakage under the applied strain. Scalable sensing performance is demonstrated on a hand‐size glove spray‐coated with 25 wt% EG/latex. Effective localization of contacts over the continuous sensing glove is achieved via the technique of electrical impedance tomography, validating the potential of the cost‐competitive EG/latex sensor for scalable sensing applications.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74447158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pan Luo, Jiamao Li, Yaopeng Zhao, Jia Li, Chong Wang, Lei Yang, Haibing Wen, Huanqing Cui
This article analyzes the issue of gate voltage oscillations in AlGaN/GaN high electron mobility transistors based on the half‐bridge circuit. With the influence of the parasitic parameters, the variation of high drain‐source voltage (Vds) can affect the gate‐source voltage (Vgs), thus resulting in serious gate voltage oscillations, which may cause over‐voltage, false turn‐on/off, and even gate breakdown. A large‐signal model is proposed to study this oscillations phenomenon. The oscillation model of Vgs is proposed as a step response of Vds. Based on the model, the influence of Vds and circuit parameters on Vgs are investigated, and guidelines to suppress the oscillation are given. Reducing the gate and power loop inductance in PCB wiring and increasing the gate resistance of inactive switch can significantly suppress the oscillation. Finally, the model is verified by both simulation results and experimental results.
{"title":"Gate Voltage Oscillation Model and Suppression Method for Enhancement‐Mode GaN Devices in Half‐Bridge Circuits","authors":"Pan Luo, Jiamao Li, Yaopeng Zhao, Jia Li, Chong Wang, Lei Yang, Haibing Wen, Huanqing Cui","doi":"10.1002/pssa.202300296","DOIUrl":"https://doi.org/10.1002/pssa.202300296","url":null,"abstract":"This article analyzes the issue of gate voltage oscillations in AlGaN/GaN high electron mobility transistors based on the half‐bridge circuit. With the influence of the parasitic parameters, the variation of high drain‐source voltage (Vds) can affect the gate‐source voltage (Vgs), thus resulting in serious gate voltage oscillations, which may cause over‐voltage, false turn‐on/off, and even gate breakdown. A large‐signal model is proposed to study this oscillations phenomenon. The oscillation model of Vgs is proposed as a step response of Vds. Based on the model, the influence of Vds and circuit parameters on Vgs are investigated, and guidelines to suppress the oscillation are given. Reducing the gate and power loop inductance in PCB wiring and increasing the gate resistance of inactive switch can significantly suppress the oscillation. Finally, the model is verified by both simulation results and experimental results.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"86 21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84014962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Boubacar Tanda Bonkano, S. Palato, J. Krumland, Sergey Kovalenko, Philipp Schwendke, M. Guerrini, Qiuyang Li, Xiaoyang Zhu, C. Cocchi, J. Stähler
{"title":"Evidence for hybrid inorganic‐organic transitions at the WS2/terrylene interface","authors":"Boubacar Tanda Bonkano, S. Palato, J. Krumland, Sergey Kovalenko, Philipp Schwendke, M. Guerrini, Qiuyang Li, Xiaoyang Zhu, C. Cocchi, J. Stähler","doi":"10.1002/pssa.202300346","DOIUrl":"https://doi.org/10.1002/pssa.202300346","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"226 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75518538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Divagar Murugan, Marcel Tintelott, Hesam Amiri, Martin Kasavetov, D. Besedin, S. Ingebrandt, X. Vu, Vivek Pachuri
Silanization is one of the widely explored surface modification strategies for biofunctionalization of oxide interfaces. For biosensor applications, silanes with active terminal groups such as amine, thiol, carboxylic, and aldehyde groups are utilized in routine. In near‐field sensing schemes like biologically sensitive field‐effect transistors, it is crucial to generate a homogeneous layer of silane to confine the biointeractions in close vicinity of the sensor interface. The homogeneity of such biofunctional layer is determined by the surface activation and silanization protocol being applied. Herein, the impact of the surface activation process and silanization on electrical characteristics of field‐effect devices is studied comprehensively using an electrolyte‐oxide‐semiconductor (EOS) capacitor with a high‐quality gate oxide. The thermally grown silicon oxide (SiO2) interface is activated using acidic mixtures and plasma treatment, while the subsequent silanization steps are investigated comparatively using two different silanes (3‐aminopropyl triethoxysilane (APTES) and 3‐glycidyloxypropyl trimethoxysilane (GPTMS) in wet‐chemical and vapor‐phase processes. Furthermore, the optimized silanization process is utilized to immobilize an oligo strand at the EOS capacitor surface, followed by the hybridization of complementary oligo strands. The optimized protocol holds the potential for large‐scale production of functional oxide interfaces for various applications.
{"title":"Comparative study of surface activation steps for thermally grown oxide interface and optimal silanization","authors":"Divagar Murugan, Marcel Tintelott, Hesam Amiri, Martin Kasavetov, D. Besedin, S. Ingebrandt, X. Vu, Vivek Pachuri","doi":"10.1002/pssa.202300294","DOIUrl":"https://doi.org/10.1002/pssa.202300294","url":null,"abstract":"Silanization is one of the widely explored surface modification strategies for biofunctionalization of oxide interfaces. For biosensor applications, silanes with active terminal groups such as amine, thiol, carboxylic, and aldehyde groups are utilized in routine. In near‐field sensing schemes like biologically sensitive field‐effect transistors, it is crucial to generate a homogeneous layer of silane to confine the biointeractions in close vicinity of the sensor interface. The homogeneity of such biofunctional layer is determined by the surface activation and silanization protocol being applied. Herein, the impact of the surface activation process and silanization on electrical characteristics of field‐effect devices is studied comprehensively using an electrolyte‐oxide‐semiconductor (EOS) capacitor with a high‐quality gate oxide. The thermally grown silicon oxide (SiO2) interface is activated using acidic mixtures and plasma treatment, while the subsequent silanization steps are investigated comparatively using two different silanes (3‐aminopropyl triethoxysilane (APTES) and 3‐glycidyloxypropyl trimethoxysilane (GPTMS) in wet‐chemical and vapor‐phase processes. Furthermore, the optimized silanization process is utilized to immobilize an oligo strand at the EOS capacitor surface, followed by the hybridization of complementary oligo strands. The optimized protocol holds the potential for large‐scale production of functional oxide interfaces for various applications.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81257444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Taube, M. Borysiewicz, Oskar Sadowski, A. Wójcicka, Jarosław Tarenko, M. Wzorek
Herein, the fabrication and characterization of low‐resistance all‐oxide transparent vertical β‐Ga2O3 diodes using indium tin oxide (ITO) and aluminum‐doped zinc oxide (AZO) Schottky contacts are reported. It is shown that an ITO ohmic contact to n+‐β‐Ga2O3 substrate is formed after annealing in N2 at 800 °C. Both AZO‐ and ITO‐based Schottky diodes show well‐behaved current–voltage characteristics. Average Schottky barrier heights and ideality factors are 0.99 and 1.05 eV and 0.95 and 1.03 eV for AZO and ITO Schottky contacts, respectively. The on‐off current ratio is about 2 ×$times$ 1010 and 1 ×$times$ 1010 for AZO and ITO Schottky contact, respectively. Moreover, the on‐state resistance is about 6–7 and 4–5 mΩ cm2 for AZO and ITO Schottky contact, respectively, and is 20–35 times lower than for previously reported transparent β‐Ga2O3 Schottky diodes.
{"title":"All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga2O3 Schottky Diodes","authors":"A. Taube, M. Borysiewicz, Oskar Sadowski, A. Wójcicka, Jarosław Tarenko, M. Wzorek","doi":"10.1002/pssa.202300251","DOIUrl":"https://doi.org/10.1002/pssa.202300251","url":null,"abstract":"Herein, the fabrication and characterization of low‐resistance all‐oxide transparent vertical β‐Ga2O3 diodes using indium tin oxide (ITO) and aluminum‐doped zinc oxide (AZO) Schottky contacts are reported. It is shown that an ITO ohmic contact to n+‐β‐Ga2O3 substrate is formed after annealing in N2 at 800 °C. Both AZO‐ and ITO‐based Schottky diodes show well‐behaved current–voltage characteristics. Average Schottky barrier heights and ideality factors are 0.99 and 1.05 eV and 0.95 and 1.03 eV for AZO and ITO Schottky contacts, respectively. The on‐off current ratio is about 2 ×$times$ 1010 and 1 ×$times$ 1010 for AZO and ITO Schottky contact, respectively. Moreover, the on‐state resistance is about 6–7 and 4–5 mΩ cm2 for AZO and ITO Schottky contact, respectively, and is 20–35 times lower than for previously reported transparent β‐Ga2O3 Schottky diodes.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82071086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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