Shiva Lamichhane, Savita Sharma, M. Tomar, A. Chowdhuri
Herein, the impact of postdeposition annealing on resistive switching behavior of radio frequency magnetron sputtered WO3 thin films is reported. Films are deposited under glancing angle deposition (GLAD) configuration of sputtering at varying GLAD angle from 65° to 80°. Structure transition from monoclinic to orthorhombic phase in deposited WO3 films is perceived after ex situ annealing at temperature of 400 °C. Resistive switching properties show shift from bipolar to unipolar switching on postdeposition annealing. WO3 films show unipolar switching behavior after ex situ annealing for all prepared samples. The value of resistance in high resistance state is lowered after ex situ heating treatment and interestingly switching voltage also reduces to 3 V from 7 V after annealing treatment. The ratio of high to low resistance state for annealed WO3 film fabricated at 70° GLAD angle is achieved to be maximum (≈219). A detailed charge transport mechanism shows that ohmic behavior is dominant current conduction mechanism at lower applied voltage, while space charge limited current and Child's law are dominant at higher applied voltages. Obtained results encourage utilization of prepared WO3 thin films toward a wide variety of applications in optoelectronics, microelectronics, and environmental engineering along with advanced electronics such as resistive memory devices.
{"title":"Effect of Annealing on Resistive Switching Properties of Glancing Angle Deposition‐Assisted WO3 Thin Films","authors":"Shiva Lamichhane, Savita Sharma, M. Tomar, A. Chowdhuri","doi":"10.1002/pssa.202300358","DOIUrl":"https://doi.org/10.1002/pssa.202300358","url":null,"abstract":"Herein, the impact of postdeposition annealing on resistive switching behavior of radio frequency magnetron sputtered WO3 thin films is reported. Films are deposited under glancing angle deposition (GLAD) configuration of sputtering at varying GLAD angle from 65° to 80°. Structure transition from monoclinic to orthorhombic phase in deposited WO3 films is perceived after ex situ annealing at temperature of 400 °C. Resistive switching properties show shift from bipolar to unipolar switching on postdeposition annealing. WO3 films show unipolar switching behavior after ex situ annealing for all prepared samples. The value of resistance in high resistance state is lowered after ex situ heating treatment and interestingly switching voltage also reduces to 3 V from 7 V after annealing treatment. The ratio of high to low resistance state for annealed WO3 film fabricated at 70° GLAD angle is achieved to be maximum (≈219). A detailed charge transport mechanism shows that ohmic behavior is dominant current conduction mechanism at lower applied voltage, while space charge limited current and Child's law are dominant at higher applied voltages. Obtained results encourage utilization of prepared WO3 thin films toward a wide variety of applications in optoelectronics, microelectronics, and environmental engineering along with advanced electronics such as resistive memory devices.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87774973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Li, S. Kovalchuk, A. Kumar, D. Liang, B. Frank, H. Lin, N. Severin, K. Bolotin, S. Kirstein, J. P. Rabe
Transition metal dichalcogenides (TMDC) are often mechanically exfoliated on mica and examined under ambient conditions. It is known that above a certain relative humidity, a molecularly thin layer of water intercalates between the mica and the TMDC. Here, we investigate the effect of molecularly thin liquid layers on the optical spectra of MoS2 and WS2 exfoliated on dry mica and exposed to the vapors of water, ethanol, and tetrahydrofuran (THF). Photoluminescence (PL) and differential reflectance (ΔR/R) spectra on the TMDCs on dry mica show dominant trion emission due to n‐doping. Intercalation of water removes charge doping and results in purely neutral exciton emission, while an ethanol layer, which can be reversibly exchanged with water, does not completely suppress charge. Similarly, THF intercalates between TMDC and mica, as shown by atomic force microscopy, but it does not suppress the charging of mica. In MoS2 bi‐ and trilayers, an intercalated water layer leads to a near doubling of the intensity of the indirect band transition. The described charging/discharging of TMDCs by molecular thin liquid layers could provide important clues to better control the optical properties of TMDCs under environmental conditions.This article is protected by copyright. All rights reserved.
{"title":"Evidence for charging and discharging of MoS2 and WS2 on mica by intercalating molecularly thin liquid layers","authors":"H. Li, S. Kovalchuk, A. Kumar, D. Liang, B. Frank, H. Lin, N. Severin, K. Bolotin, S. Kirstein, J. P. Rabe","doi":"10.1002/pssa.202300302","DOIUrl":"https://doi.org/10.1002/pssa.202300302","url":null,"abstract":"Transition metal dichalcogenides (TMDC) are often mechanically exfoliated on mica and examined under ambient conditions. It is known that above a certain relative humidity, a molecularly thin layer of water intercalates between the mica and the TMDC. Here, we investigate the effect of molecularly thin liquid layers on the optical spectra of MoS2 and WS2 exfoliated on dry mica and exposed to the vapors of water, ethanol, and tetrahydrofuran (THF). Photoluminescence (PL) and differential reflectance (ΔR/R) spectra on the TMDCs on dry mica show dominant trion emission due to n‐doping. Intercalation of water removes charge doping and results in purely neutral exciton emission, while an ethanol layer, which can be reversibly exchanged with water, does not completely suppress charge. Similarly, THF intercalates between TMDC and mica, as shown by atomic force microscopy, but it does not suppress the charging of mica. In MoS2 bi‐ and trilayers, an intercalated water layer leads to a near doubling of the intensity of the indirect band transition. The described charging/discharging of TMDCs by molecular thin liquid layers could provide important clues to better control the optical properties of TMDCs under environmental conditions.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86331444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anne Frommelius, Thorsten Ohlerth, M. Noyong, U. Simon
Resistive switching for non‐volatile data storage is a highly relevant field of research. Up to now, resistive switching devices are fabricated via semiconductor processing technologies. This poses the question, of whether integration of chemically tailored nanoparticles, either consisting of valence change or phase change materials, can be integrated in nanoelectrode configurations in order to explore their functionality for resistive switching applications. This Review will discuss the resistive switching properties of such nanoparticles by means of selected examples of both, nanoparticle assemblies as well as on the individual particle level. Although this field of research is rather unexplored, it will become evident that chemically tailored nanoparticles bear great potential for resistive switching applications.This article is protected by copyright. All rights reserved.
{"title":"On the application potential of chemically tailored metal oxide and higher chalcogenide nanoparticles for nanoscale resistive switching devices","authors":"Anne Frommelius, Thorsten Ohlerth, M. Noyong, U. Simon","doi":"10.1002/pssa.202300456","DOIUrl":"https://doi.org/10.1002/pssa.202300456","url":null,"abstract":"Resistive switching for non‐volatile data storage is a highly relevant field of research. Up to now, resistive switching devices are fabricated via semiconductor processing technologies. This poses the question, of whether integration of chemically tailored nanoparticles, either consisting of valence change or phase change materials, can be integrated in nanoelectrode configurations in order to explore their functionality for resistive switching applications. This Review will discuss the resistive switching properties of such nanoparticles by means of selected examples of both, nanoparticle assemblies as well as on the individual particle level. Although this field of research is rather unexplored, it will become evident that chemically tailored nanoparticles bear great potential for resistive switching applications.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86720503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shubham Sharma, Shuichi Nagamatsu, Vipul Singh, S. Pandey
Fabrication of multilayer thin films of solution‐processable organic semiconductors has great potential in organic electronics but adopting existing thin film techniques to attain this is highly cumbersome. In this work, a unique unidirectional floating film transfer method (UFTM) has been utilized, which allows the facile fabrication of large area and oriented thin films of conjugated polymers. Using this method, we have successfully fabricated and characterized multilayer and oriented thin films of regioregular poly(3‐hexylthiophene) without having any adverse effect on the underlying layers. Optical characterizations revealed that fabricated thin films are anisotropic with a dichroic ratio of 2.2 having a single layer thickness of 14.5 nm. X‐ray diffraction results demonstrated uniformity in the crystallinity of the multilayered thin film with comparable crystallite size and inter‐planar spacing with purely edge‐on molecular orientation. The organic field effect transistor fabricated using multilayer thin films also exhibits a uniform and saturated charge carrier mobility of about 0.1 cm2V‐1s‐1.This article is protected by copyright. All rights reserved.
{"title":"Facile Fabrication and Characterization of Oriented and Multilayer Thin Films of Solution Processable Conjugated Polymer","authors":"Shubham Sharma, Shuichi Nagamatsu, Vipul Singh, S. Pandey","doi":"10.1002/pssa.202300194","DOIUrl":"https://doi.org/10.1002/pssa.202300194","url":null,"abstract":"Fabrication of multilayer thin films of solution‐processable organic semiconductors has great potential in organic electronics but adopting existing thin film techniques to attain this is highly cumbersome. In this work, a unique unidirectional floating film transfer method (UFTM) has been utilized, which allows the facile fabrication of large area and oriented thin films of conjugated polymers. Using this method, we have successfully fabricated and characterized multilayer and oriented thin films of regioregular poly(3‐hexylthiophene) without having any adverse effect on the underlying layers. Optical characterizations revealed that fabricated thin films are anisotropic with a dichroic ratio of 2.2 having a single layer thickness of 14.5 nm. X‐ray diffraction results demonstrated uniformity in the crystallinity of the multilayered thin film with comparable crystallite size and inter‐planar spacing with purely edge‐on molecular orientation. The organic field effect transistor fabricated using multilayer thin films also exhibits a uniform and saturated charge carrier mobility of about 0.1 cm2V‐1s‐1.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74301181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bifacial solar cells (BFSCs) are gaining popularity due to their compactness, space‐saving property, and higher photoconversion efficiency (PCE) than mono‐facial solar cells. Bifacial dye‐sensitized solar cells (BF‐DSSCs) are fabricated and characterized utilizing D‐205 as a dye‐sensitizer in combination with I‐/I3 ‐ and Co2+/Co3+ redox electrolytes. BF‐DSSCs using iodine‐based electrolytes demonstrate a cumulative PCE and bifaciality factor (BFF) of 13.05% and 85%, respectively. The hampered PCE under back‐side light illumination is attributed to the absorption of photons by the electrolyte itself. Contrary to this, BF‐DSSCs fabricated using cobalt‐complex‐based redox electrolyte exhibits an exceptionally high BFF of nearly 100% with a PCE of 4.77% and 4.75% under the front and rear light illumination, respectively. Although the open circuit voltage (Voc) of the BF‐DSSCs fabricated using cobalt electrolyte (with deeper redox potential) is slightly higher than that of BF‐DSSCs fabricated using iodine electrolyte, their cumulative PCE (9.52%) is much lower than that of iodine‐based device counterparts (13.05%). This decrease in PCE is attributed to the relatively fast charge recombination in the cobalt electrolyte‐based BF‐DSSCs.This article is protected by copyright. All rights reserved.
{"title":"Fabrication and Characterization of Bifacial Dye‐Sensitized Solar Cells Utilizing Indoline Dye with Iodine and Cobalt‐based Redox Electrolytes","authors":"S. Shaban, Safalmani Pradhan, S. Pandey","doi":"10.1002/pssa.202300241","DOIUrl":"https://doi.org/10.1002/pssa.202300241","url":null,"abstract":"Bifacial solar cells (BFSCs) are gaining popularity due to their compactness, space‐saving property, and higher photoconversion efficiency (PCE) than mono‐facial solar cells. Bifacial dye‐sensitized solar cells (BF‐DSSCs) are fabricated and characterized utilizing D‐205 as a dye‐sensitizer in combination with I‐/I3\u0000‐ and Co2+/Co3+ redox electrolytes. BF‐DSSCs using iodine‐based electrolytes demonstrate a cumulative PCE and bifaciality factor (BFF) of 13.05% and 85%, respectively. The hampered PCE under back‐side light illumination is attributed to the absorption of photons by the electrolyte itself. Contrary to this, BF‐DSSCs fabricated using cobalt‐complex‐based redox electrolyte exhibits an exceptionally high BFF of nearly 100% with a PCE of 4.77% and 4.75% under the front and rear light illumination, respectively. Although the open circuit voltage (Voc) of the BF‐DSSCs fabricated using cobalt electrolyte (with deeper redox potential) is slightly higher than that of BF‐DSSCs fabricated using iodine electrolyte, their cumulative PCE (9.52%) is much lower than that of iodine‐based device counterparts (13.05%). This decrease in PCE is attributed to the relatively fast charge recombination in the cobalt electrolyte‐based BF‐DSSCs.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86103492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuhei Seki, Rintaro Kurashima, Minami Yoshihara, Y. Hoshino
Impurity activation of dopants implanted in diamond is one of the crucial issues for device application of diamond. Boron impurity atoms are introduced in diamond, which expectedly act as acceptors, by ion implantation technique, and are investigated the optimum annealing time for the effective dopant activation. The impurity doping is performed by boron ion implantation at multiple incident energies to obtain a uniform dopant concentration from the surface to 350 nm depth followed by activation annealing at 1300 °C for 5–240 min. The electrical properties of specific resistance, carrier concentration, and conduction type are analyzed as a function of temperature from room temperature to 873 K. The estimated ionization energy is strongly dependent on the annealing time and asymptotically approaches to 0.3 eV, which is theoretically expected ionization energy of acceptor boron, with increasing annealing time. A shorter annealing time ( ≲ 120 min ) $leq 120 text{min} left.right)$ does not sufficiently recover radiation damages caused by ion implantation forming deep levels, which act as irregular conduction. It is consequently found that an optimum window of annealing time for effective dopant activation and suggested carrier transport mechanisms depending on the annealing time.
{"title":"Optimization of Activation Annealing Condition for Boron‐Implanted Diamond","authors":"Yuhei Seki, Rintaro Kurashima, Minami Yoshihara, Y. Hoshino","doi":"10.1002/pssa.202300522","DOIUrl":"https://doi.org/10.1002/pssa.202300522","url":null,"abstract":"Impurity activation of dopants implanted in diamond is one of the crucial issues for device application of diamond. Boron impurity atoms are introduced in diamond, which expectedly act as acceptors, by ion implantation technique, and are investigated the optimum annealing time for the effective dopant activation. The impurity doping is performed by boron ion implantation at multiple incident energies to obtain a uniform dopant concentration from the surface to 350 nm depth followed by activation annealing at 1300 °C for 5–240 min. The electrical properties of specific resistance, carrier concentration, and conduction type are analyzed as a function of temperature from room temperature to 873 K. The estimated ionization energy is strongly dependent on the annealing time and asymptotically approaches to 0.3 eV, which is theoretically expected ionization energy of acceptor boron, with increasing annealing time. A shorter annealing time ( ≲ 120 min ) $leq 120 text{min} left.right)$ does not sufficiently recover radiation damages caused by ion implantation forming deep levels, which act as irregular conduction. It is consequently found that an optimum window of annealing time for effective dopant activation and suggested carrier transport mechanisms depending on the annealing time.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77898581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Mandal, Ashish Kumar Yadav, S. K. Pandey, S. Chakrabarti
Vanadium disulfide (VS2) is an important member of the transition‐metal dichalcogenides (TMDs) family, which offers high conductivity. In nature, it can exist in two phases, i.e., 1T and 2H. Herein, the metallic 1T VS2‐based in‐plane micro‐supercapacitor (MSC) is fabricated by a facile‐mask‐assisted printing technique. Initially, the 1T VS2 nanosheets are synthesized using a simple one‐pot hydrothermal route. The material characterizations have claimed the formation of a 1T phase and the density of states (DOS) reveal that the 1T phase of VS2 is metallic in nature. After experimental and theoretical investigations of synthesized nanosheets, a VS2 electrode‐based in‐plane MSC is fabricated using a simple mask‐assisted printing technique. The fabricated device demonstrates excellent capacitance retention of 97.6% after 1000 cycles of cyclic voltammetry measurement at a 100 mV s−1 scan rate. The device also shows an excellent areal capacitance of 212.7 mF cm−2 and a high areal energy density of 10.63 μWh cm−2 at a high‐power density of 4.45 mW cm−2. This low‐cost and simple fabrication process can produce high‐performance in‐plane MSC devices.
二硫化钒(VS2)是过渡金属二硫化物(TMDs)家族的重要成员，具有高导电性。在自然界中，它可以存在于两个阶段，即1T和2H。本文采用易掩膜辅助印刷技术制备了金属1T VS2基平面内微超级电容器(MSC)。最初，采用简单的一锅水热方法合成了1T VS2纳米片。材料表征表明VS2的1T相形成，态密度(DOS)表明VS2的1T相具有金属性质。经过对合成纳米片的实验和理论研究，采用简单的掩模辅助印刷技术制备了基于VS2电极的平面内纳米薄片。在100 mV s−1扫描速率下，经过1000次循环伏安测量，该器件的电容保持率达到97.6%。该器件在高功率密度为4.45 mW cm - 2时，具有212.7 mF cm - 2的优异面电容和10.63 μWh cm - 2的高面能量密度。这种低成本和简单的制造工艺可以生产出高性能的平面内MSC器件。
{"title":"Fabrication of 1T VS2 Electrode‐Based In‐Plane Micro‐Supercapacitor Using a Cost‐Effective Mask‐Assisted Printing Technique","authors":"A. Mandal, Ashish Kumar Yadav, S. K. Pandey, S. Chakrabarti","doi":"10.1002/pssa.202300274","DOIUrl":"https://doi.org/10.1002/pssa.202300274","url":null,"abstract":"Vanadium disulfide (VS2) is an important member of the transition‐metal dichalcogenides (TMDs) family, which offers high conductivity. In nature, it can exist in two phases, i.e., 1T and 2H. Herein, the metallic 1T VS2‐based in‐plane micro‐supercapacitor (MSC) is fabricated by a facile‐mask‐assisted printing technique. Initially, the 1T VS2 nanosheets are synthesized using a simple one‐pot hydrothermal route. The material characterizations have claimed the formation of a 1T phase and the density of states (DOS) reveal that the 1T phase of VS2 is metallic in nature. After experimental and theoretical investigations of synthesized nanosheets, a VS2 electrode‐based in‐plane MSC is fabricated using a simple mask‐assisted printing technique. The fabricated device demonstrates excellent capacitance retention of 97.6% after 1000 cycles of cyclic voltammetry measurement at a 100 mV s−1 scan rate. The device also shows an excellent areal capacitance of 212.7 mF cm−2 and a high areal energy density of 10.63 μWh cm−2 at a high‐power density of 4.45 mW cm−2. This low‐cost and simple fabrication process can produce high‐performance in‐plane MSC devices.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84066378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cerium oxide (CeO2) is a material with unique dielectric properties that make it a promising candidate for various applications. High electrical resistance and a wide bandgap of pristine CeO2 limit its applicability in photovoltaics and photo‐electrocatalysis. CeO2 is co‐doped with transition metals (Fe+2/Fe+3 and Cu+2), which reduces its optical bandgap energy and electrical resistance. This study aims to investigate the dielectric relaxation behavior and charge‐carrier dynamics of Fe, Cu–CeO2. The enhanced charge‐carrier dynamics in the Fe, Cu–doped CeO2 compared to pristine CeO2 are reported. Using temperature‐dependent electrochemical impedance spectroscopy (TD‐EIS), the dielectric relaxation and carrier dynamics in pristine CeO2 and Fe, Cu–doped CeO2 in the temperature range 313–473 K along with the modulus spectroscopy are investigated. It is observed that Z′ values reduced with the temperature, thus showing the negative temperature coefficient of resistance in the frequency range 6.28–1.005 × 105 radians s−1. Furthermore, a correlated study of –Z″ and M″ shows the charge‐carrier relaxation behavior changes from ideal Debye type to non‐Debye type with temperature rise in Fe, Cu–doped CeO2.
{"title":"Investigation of Temperature‐Activated Charge‐Carrier Dynamics and Dielectric Relaxation in Fe, Cu–Doped CeO2","authors":"M. Vishwakarma, P. Jain","doi":"10.1002/pssa.202300349","DOIUrl":"https://doi.org/10.1002/pssa.202300349","url":null,"abstract":"Cerium oxide (CeO2) is a material with unique dielectric properties that make it a promising candidate for various applications. High electrical resistance and a wide bandgap of pristine CeO2 limit its applicability in photovoltaics and photo‐electrocatalysis. CeO2 is co‐doped with transition metals (Fe+2/Fe+3 and Cu+2), which reduces its optical bandgap energy and electrical resistance. This study aims to investigate the dielectric relaxation behavior and charge‐carrier dynamics of Fe, Cu–CeO2. The enhanced charge‐carrier dynamics in the Fe, Cu–doped CeO2 compared to pristine CeO2 are reported. Using temperature‐dependent electrochemical impedance spectroscopy (TD‐EIS), the dielectric relaxation and carrier dynamics in pristine CeO2 and Fe, Cu–doped CeO2 in the temperature range 313–473 K along with the modulus spectroscopy are investigated. It is observed that Z′ values reduced with the temperature, thus showing the negative temperature coefficient of resistance in the frequency range 6.28–1.005 × 105 radians s−1. Furthermore, a correlated study of –Z″ and M″ shows the charge‐carrier relaxation behavior changes from ideal Debye type to non‐Debye type with temperature rise in Fe, Cu–doped CeO2.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86862954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An organic field‐effect transistor (OFET) is the representative amplification device showing a switching profile by applying a gate voltage, which indicates the potential as a chemical sensor device in combination with appropriate molecular recognition materials. On the other hand, the realization of OFET‐based chemical sensors for real‐sample analysis has been limited owing to the instability of organic semiconductive materials under ambient conditions and the difficulty of the designs of molecular recognition materials. Herein, this Review describes methodologies and actual approaches to maximize the potential of the OFETs as chemical sensor platforms based on fusion technologies between organic electronics and molecular recognition chemistry.This article is protected by copyright. All rights reserved.
{"title":"Organic Transistor‐based Chemical Sensors for Real‐Sample Analysis","authors":"Yui Sasaki, T. Minami","doi":"10.1002/pssa.202300469","DOIUrl":"https://doi.org/10.1002/pssa.202300469","url":null,"abstract":"An organic field‐effect transistor (OFET) is the representative amplification device showing a switching profile by applying a gate voltage, which indicates the potential as a chemical sensor device in combination with appropriate molecular recognition materials. On the other hand, the realization of OFET‐based chemical sensors for real‐sample analysis has been limited owing to the instability of organic semiconductive materials under ambient conditions and the difficulty of the designs of molecular recognition materials. Herein, this Review describes methodologies and actual approaches to maximize the potential of the OFETs as chemical sensor platforms based on fusion technologies between organic electronics and molecular recognition chemistry.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76890931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kota Mori, Y. Kurokawa, Sai Kiran Mavileti, S. Pandey
Novel far‐red sensitive symmetrical squaraine dyes aiming towards multifunctional properties such as control of dye aggregation, promotion of molecular self‐assembly and introduction of electrolyte function by alkyl chain terminal modification were designed. Newly designed dye without terminal modification as reference (SQ‐5) along with iodine (SQ‐77) and imidazole (SQ‐79) alkyl terminal‐modified dyes were successfully synthesized, characterized, and subjected to detailed photophysical investigations. Iodine terminal modification (SQ‐77) led to enhanced molar extinction coefficient, dye aggregation, dye loading and binding strength on the TiO2 surface, which was found by just the opposite after the imidazole (SQ‐79) terminal modification. Demonstration of nearly similar photovoltaic performance by SQ‐77 and SQ‐79 in the absence of iodine and chenodeoxycholic acid validates their multi‐functional role as electrolyte function and dye aggregation prevention, respectively, in addition to their main role as photosensitizer. DSSCs fabricated with SQ‐5 as a sensitizer showed efficient far‐red to NIR photo‐sensitization and photon harvesting with short‐circuit current density, open‐circuit voltage and fill factor of 11.98 mA/cm2, 0.61 V, and 0.57, respectively leading to a photoconversion efficiency of 4.2 % under simulated solar irradiation.This article is protected by copyright. All rights reserved.
{"title":"Design, Synthesis and Photophysical Characterization of Multifunctional Far‐red Squaraine Dyes for Dye‐Sensitized Solar Cells","authors":"Kota Mori, Y. Kurokawa, Sai Kiran Mavileti, S. Pandey","doi":"10.1002/pssa.202300254","DOIUrl":"https://doi.org/10.1002/pssa.202300254","url":null,"abstract":"Novel far‐red sensitive symmetrical squaraine dyes aiming towards multifunctional properties such as control of dye aggregation, promotion of molecular self‐assembly and introduction of electrolyte function by alkyl chain terminal modification were designed. Newly designed dye without terminal modification as reference (SQ‐5) along with iodine (SQ‐77) and imidazole (SQ‐79) alkyl terminal‐modified dyes were successfully synthesized, characterized, and subjected to detailed photophysical investigations. Iodine terminal modification (SQ‐77) led to enhanced molar extinction coefficient, dye aggregation, dye loading and binding strength on the TiO2 surface, which was found by just the opposite after the imidazole (SQ‐79) terminal modification. Demonstration of nearly similar photovoltaic performance by SQ‐77 and SQ‐79 in the absence of iodine and chenodeoxycholic acid validates their multi‐functional role as electrolyte function and dye aggregation prevention, respectively, in addition to their main role as photosensitizer. DSSCs fabricated with SQ‐5 as a sensitizer showed efficient far‐red to NIR photo‐sensitization and photon harvesting with short‐circuit current density, open‐circuit voltage and fill factor of 11.98 mA/cm2, 0.61 V, and 0.57, respectively leading to a photoconversion efficiency of 4.2 % under simulated solar irradiation.This article is protected by copyright. All rights reserved.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84392682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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