Herein, the sintering temperature effect on various properties of Pr3+‐substituted nickel ferrites prepared through the sol–gel–citrate autocombustion method is presented. The Rietveld refinement of X‐ray diffraction patterns confirms the formation of the inverse spinel nickel ferrite phase with an additional orthorhombic phase PrFeO3. The crystallinity of those samples is better with a lesser weight percentage of the secondary phase for higher sintered samples. Structural parameters like crystallite size, lattice parameter, microstrain, and bond lengths depend strongly on sintering temperature with an increasing trend. Scanning electron micrographs clearly show the grain growth of the samples with sintering temperature with the formation of a secondary phase at the grain boundaries. The photoluminescence study points to the photocatalytic nature of the compositions. The bandgaps of the samples are calculated using a UV–vis study, which shows an initial decrease in values with increasing sintering temperature. The electrical study confirms the grain and grain boundary contribution to the total conductivity. With higher sintering temperatures, activation energies decrease, but the dielectric loss and saturation dielectric constant tend to increase. The scaling of conductivity and dielectric loss spectra confirm the time–temperature superposition principle.
{"title":"Structural Interpretation of Sintering Temperature Effect on Optical and Electrical Properties of Pr3+‐Substituted Nickel Ferrites","authors":"Chaitali Mondal, A. Dutta, A. Sinha","doi":"10.1002/pssa.202300263","DOIUrl":"https://doi.org/10.1002/pssa.202300263","url":null,"abstract":"Herein, the sintering temperature effect on various properties of Pr3+‐substituted nickel ferrites prepared through the sol–gel–citrate autocombustion method is presented. The Rietveld refinement of X‐ray diffraction patterns confirms the formation of the inverse spinel nickel ferrite phase with an additional orthorhombic phase PrFeO3. The crystallinity of those samples is better with a lesser weight percentage of the secondary phase for higher sintered samples. Structural parameters like crystallite size, lattice parameter, microstrain, and bond lengths depend strongly on sintering temperature with an increasing trend. Scanning electron micrographs clearly show the grain growth of the samples with sintering temperature with the formation of a secondary phase at the grain boundaries. The photoluminescence study points to the photocatalytic nature of the compositions. The bandgaps of the samples are calculated using a UV–vis study, which shows an initial decrease in values with increasing sintering temperature. The electrical study confirms the grain and grain boundary contribution to the total conductivity. With higher sintering temperatures, activation energies decrease, but the dielectric loss and saturation dielectric constant tend to increase. The scaling of conductivity and dielectric loss spectra confirm the time–temperature superposition principle.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80861200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Johannes Müller, Max Heyl, T. Schultz, Kristiane Elsner, M. Schloz, Steffen Rühl, H. Seiler, Norbert Koch, E. List‐Kratochvil, C. Koch
{"title":"Probing crystallinity and grain structure of 2D materials and 2D‐like van der Waals heterostructures by low‐voltage electron diffraction","authors":"Johannes Müller, Max Heyl, T. Schultz, Kristiane Elsner, M. Schloz, Steffen Rühl, H. Seiler, Norbert Koch, E. List‐Kratochvil, C. Koch","doi":"10.1002/pssa.202300148","DOIUrl":"https://doi.org/10.1002/pssa.202300148","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85388882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Yang, Z. Yuan, S. J. Wu, J. Y. Chen, M. Hou, A. D. Liu, K. Yu, Y. H. Zhang, Xia Li, Y. Hu, J. Shang, S. Yin, X. W. Wang
PbZr0.52Ti0.48O3(PZT)/PbZrO3(PZ) composite films are deposited on LaNiO3/SiO2/Si substrates using sol–gel method, and annealed at 620 °C for a different time with the rapid thermal annealing technology. The microstructures, crystal structure, and electrical performance of the PZT/PZ composite films are researched. When the composite films are annealed at 620 °C for 3 min, the PZT films show the perovskite phase and the PZ films exhibit the pyrochlore phase with tiny perovskite phase, making the films obtain a linear hysteresis loop and possess the high energy storage density of 10.0 J cm−3 and the energy storage efficiency of 84.8%. The aforementioned experimental results show that the phase structure of the PZT/PZ multilayer films can be regulated by different annealing times, which would improve the energy storage performance.
{"title":"Energy Storage Performance of PZT/PZ Composite Films Obtained by Sol–Gel Method","authors":"F. Yang, Z. Yuan, S. J. Wu, J. Y. Chen, M. Hou, A. D. Liu, K. Yu, Y. H. Zhang, Xia Li, Y. Hu, J. Shang, S. Yin, X. W. Wang","doi":"10.1002/pssa.202300233","DOIUrl":"https://doi.org/10.1002/pssa.202300233","url":null,"abstract":"PbZr0.52Ti0.48O3(PZT)/PbZrO3(PZ) composite films are deposited on LaNiO3/SiO2/Si substrates using sol–gel method, and annealed at 620 °C for a different time with the rapid thermal annealing technology. The microstructures, crystal structure, and electrical performance of the PZT/PZ composite films are researched. When the composite films are annealed at 620 °C for 3 min, the PZT films show the perovskite phase and the PZ films exhibit the pyrochlore phase with tiny perovskite phase, making the films obtain a linear hysteresis loop and possess the high energy storage density of 10.0 J cm−3 and the energy storage efficiency of 84.8%. The aforementioned experimental results show that the phase structure of the PZT/PZ multilayer films can be regulated by different annealing times, which would improve the energy storage performance.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82312399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ryosuke Fukazawa, Yoshiki Maegawa, M. Morimoto, R. Matsubara, A. Kubono, S. Naka
{"title":"Hole injection characteristics and annealing temperature dependence for organic light‐emitting diodes using spontaneous polarization","authors":"Ryosuke Fukazawa, Yoshiki Maegawa, M. Morimoto, R. Matsubara, A. Kubono, S. Naka","doi":"10.1002/pssa.202300161","DOIUrl":"https://doi.org/10.1002/pssa.202300161","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72854955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Haihong Niu, Junqiao Shao, Yuxin Xie, Taibao Ye, Tianwen Li, Suikang Luo, Xiaoyu Yao
Carbon nanospheres are successfully synthesized with a particle size of about 140 nm using a two‐step hydrothermal method and used the carbon nanospheres as the deposition template material on the surface of P25(TiO2) by means of vertical deposition method. The antiopaline TiO2 photonic crystal (PC) structure is further prepared via immersed carbon nanospheres in TiO2 precursor solution, and the antiopal PC is used as the scattering layer of the photoanode of dye‐sensitized solar cell (DSSCs). As a comparison, the antiopal PC reflective layer is also prepared on the photoanode of DSSCs using polystyrene nanospheres as the template material. The photoanodes with those PC scattering layers prepared with different template materials are fabricated into complete DSSCs. The final photoelectric conversion efficiency of the DSSCs prepared with carbon nanospheres as the template material reaches 7.02%, which is comparable to the cells prepared with polystyrene nanospheres as the template material. The efficiency of the cell with the scattering layer is increased by about 16% compared with that of the normal DSSC based on P25.
{"title":"Application of Carbon Nanosphere Templates for Preparation of Inverse Opal Photonic Crystals in Dye‐Sensitized Solar Cells","authors":"Haihong Niu, Junqiao Shao, Yuxin Xie, Taibao Ye, Tianwen Li, Suikang Luo, Xiaoyu Yao","doi":"10.1002/pssa.202300221","DOIUrl":"https://doi.org/10.1002/pssa.202300221","url":null,"abstract":"Carbon nanospheres are successfully synthesized with a particle size of about 140 nm using a two‐step hydrothermal method and used the carbon nanospheres as the deposition template material on the surface of P25(TiO2) by means of vertical deposition method. The antiopaline TiO2 photonic crystal (PC) structure is further prepared via immersed carbon nanospheres in TiO2 precursor solution, and the antiopal PC is used as the scattering layer of the photoanode of dye‐sensitized solar cell (DSSCs). As a comparison, the antiopal PC reflective layer is also prepared on the photoanode of DSSCs using polystyrene nanospheres as the template material. The photoanodes with those PC scattering layers prepared with different template materials are fabricated into complete DSSCs. The final photoelectric conversion efficiency of the DSSCs prepared with carbon nanospheres as the template material reaches 7.02%, which is comparable to the cells prepared with polystyrene nanospheres as the template material. The efficiency of the cell with the scattering layer is increased by about 16% compared with that of the normal DSSC based on P25.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86646723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Herein, the effect of prebake temperature on the surface structure of zinc oxide (ZnO) nanowrinkle structures formed in a sol–gel growth process for UV photodetection is demonstrated. The sol–gel solutions are spin‐coated on glass and c‐plane sapphire substrates, and the resulting ZnO films are subjected to prebake and crystallization processes at 800 °C for an hour. In the sol–gel process, the prebake process is crucial in forming the nanowrinkle structure on the surface of the ZnO film. The maximum nanowrinkle structure of ZnO film is achieved at the prebake temperature of 150 °C. In addition to the formation of the optimized nanowrinkle structure, the UV response of the photodetector is further enhanced through the prebake temperature control. The nanowrinkle network structure significantly improves the optical absorbance and photoluminescence characteristics of the ZnO film, leading to high photocurrent, photoresponsivity, and external quantum efficiency for UV light. The results demonstrate the potential of sol–gel‐derived ZnO photodetectors with nanowrinkle network structures for UV sensing applications.
{"title":"High‐Performance Self‐Assembled ZnO Nanowrinkle Network Structured Photodetectors","authors":"Jongyun Choi, G. Lee, Sung‐Nam Lee","doi":"10.1002/pssa.202300338","DOIUrl":"https://doi.org/10.1002/pssa.202300338","url":null,"abstract":"Herein, the effect of prebake temperature on the surface structure of zinc oxide (ZnO) nanowrinkle structures formed in a sol–gel growth process for UV photodetection is demonstrated. The sol–gel solutions are spin‐coated on glass and c‐plane sapphire substrates, and the resulting ZnO films are subjected to prebake and crystallization processes at 800 °C for an hour. In the sol–gel process, the prebake process is crucial in forming the nanowrinkle structure on the surface of the ZnO film. The maximum nanowrinkle structure of ZnO film is achieved at the prebake temperature of 150 °C. In addition to the formation of the optimized nanowrinkle structure, the UV response of the photodetector is further enhanced through the prebake temperature control. The nanowrinkle network structure significantly improves the optical absorbance and photoluminescence characteristics of the ZnO film, leading to high photocurrent, photoresponsivity, and external quantum efficiency for UV light. The results demonstrate the potential of sol–gel‐derived ZnO photodetectors with nanowrinkle network structures for UV sensing applications.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81075666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shaivya Shukla, Onika Parmar, Amit Singh Rajput, Zeesha Mishra
This paper presents the switching analysis of vertical stepped doped high k VDMOS. The introduction of vertical step doping in the n pillar of HK VDMOS brings improvement in switching performance. All the analysis of proposed and conventional device is carried out using silvaco ATLAS tool. Significant reduction in the switching delay is noted for different values of k. It is observed to be 40% for k = 20, 28.57% for k = 10, and 31.76% for k = 5. So the proposed step doped high k VDMOS can replace the high k VDMOS when fast switching is desired.
{"title":"Stepped Doped High k VDMOS: Switching Characteristics","authors":"Shaivya Shukla, Onika Parmar, Amit Singh Rajput, Zeesha Mishra","doi":"10.1002/pssa.202300311","DOIUrl":"https://doi.org/10.1002/pssa.202300311","url":null,"abstract":"This paper presents the switching analysis of vertical stepped doped high k VDMOS. The introduction of vertical step doping in the n pillar of HK VDMOS brings improvement in switching performance. All the analysis of proposed and conventional device is carried out using silvaco ATLAS tool. Significant reduction in the switching delay is noted for different values of k. It is observed to be 40% for k = 20, 28.57% for k = 10, and 31.76% for k = 5. So the proposed step doped high k VDMOS can replace the high k VDMOS when fast switching is desired.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74410653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mucun Li, E. Wu, Linyan Xu, X. Hu, Xiaopu Miao, Jing Liu
Applying 2D materials to build memristors is a promising strategy that has attracted great interest in the semiconductor field in recent years. Although the study of memristors based on chemical vapor deposition (CVD) with lattice defects has been well established, the applications and detailed knowledge of the ones using mechanical exfoliation with good lattice structures are still scarce. Herein, the resistive switching behavior of an array of 3 μm × 3 μm cross‐point Au/25.7 nm mechanically exfoliated h‐BN/Au memristors is investigated after a controllable electron beam doping process. An electron beam irradiation strategy is first proposed to treat h‐BN memristors with intact lattice structure. Devices with moderate electron beam irradiation, which is about 1500 or 2000 mC cm−2, show good resistive switching curves. The memristor device has a repeatable resistive switching behavior, an on/off ratio of 108, a set voltage as low as 5 V, and a retention higher than 1000 s. This strategy provides an alternative method to improve the performance of memristor. Mechanical exfoliated h‐BN preserves the lattice structure, which is an immediate advantage to fabricate memristor using it compared to that fabricated by CVD.
{"title":"Electron Beam‐Irradiated Au/h‐BN/Au Cross‐Point Memristors","authors":"Mucun Li, E. Wu, Linyan Xu, X. Hu, Xiaopu Miao, Jing Liu","doi":"10.1002/pssa.202300204","DOIUrl":"https://doi.org/10.1002/pssa.202300204","url":null,"abstract":"Applying 2D materials to build memristors is a promising strategy that has attracted great interest in the semiconductor field in recent years. Although the study of memristors based on chemical vapor deposition (CVD) with lattice defects has been well established, the applications and detailed knowledge of the ones using mechanical exfoliation with good lattice structures are still scarce. Herein, the resistive switching behavior of an array of 3 μm × 3 μm cross‐point Au/25.7 nm mechanically exfoliated h‐BN/Au memristors is investigated after a controllable electron beam doping process. An electron beam irradiation strategy is first proposed to treat h‐BN memristors with intact lattice structure. Devices with moderate electron beam irradiation, which is about 1500 or 2000 mC cm−2, show good resistive switching curves. The memristor device has a repeatable resistive switching behavior, an on/off ratio of 108, a set voltage as low as 5 V, and a retention higher than 1000 s. This strategy provides an alternative method to improve the performance of memristor. Mechanical exfoliated h‐BN preserves the lattice structure, which is an immediate advantage to fabricate memristor using it compared to that fabricated by CVD.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76769681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Vertical Distribution of Molecular Orientation and its Implication on Charge Transport in Floating Films of Conjugated Polymers","authors":"Harshita Rai, Kumar Vivek Gaurav, Safalmani Pradhan, Moulika Desu, Shubham Sharma, Shuichi Nagamatsu, S. Pandey","doi":"10.1002/pssa.202300236","DOIUrl":"https://doi.org/10.1002/pssa.202300236","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78073153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md. Zaman Molla, A. Baranwal, S. Hayase, S. Pandey
{"title":"Optimization of Device Parameters for Back Contact Transparent Conductive Oxide Less Dye Sensitized Solar Cells Fabrication","authors":"Md. Zaman Molla, A. Baranwal, S. Hayase, S. Pandey","doi":"10.1002/pssa.202300095","DOIUrl":"https://doi.org/10.1002/pssa.202300095","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75305540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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