Karuppiah Kathiresan, N. R. Ramanujam, Karuppiah Poovendran, S. Taya
In the current study, it is aimed at using defective 1D photonic crystals (PCs) to detect the chikungunya virus in various healthy and diseased blood samples composed of plasma, platelets, red blood cells, and uric acid. The proposed PC structure has 14 periods and consists of repeating SiC and SiO2 layers with a central cavity layer. When blood samples are injected into the cavity layer, the transmittance spectrum is examined theoretically by using a transfer matrix approach to determine how the wavelength of the defect mode changes. The cavity layer is 540 and 648 nm thick, and the work is carried out at different angles of incidence. The performance of the sensor is quantified by computing the sensitivity, figure of merit, quality factor, and limit of detection values of the sensor for various blood samples. The maximum sensitivity is 1205.5 nm RIU−1 and detection limit of the order is 10−6 in this proposed work. A lower value of sensor resolution of 0.01218 is also achieved. Such a high‐performance sensor is suitable for biosensing applications with better sensing capabilities.
{"title":"A Theoretical Approach for Detecting the Chikungunya Virus Based on 1D Photonic Crystals","authors":"Karuppiah Kathiresan, N. R. Ramanujam, Karuppiah Poovendran, S. Taya","doi":"10.1002/pssa.202300362","DOIUrl":"https://doi.org/10.1002/pssa.202300362","url":null,"abstract":"In the current study, it is aimed at using defective 1D photonic crystals (PCs) to detect the chikungunya virus in various healthy and diseased blood samples composed of plasma, platelets, red blood cells, and uric acid. The proposed PC structure has 14 periods and consists of repeating SiC and SiO2 layers with a central cavity layer. When blood samples are injected into the cavity layer, the transmittance spectrum is examined theoretically by using a transfer matrix approach to determine how the wavelength of the defect mode changes. The cavity layer is 540 and 648 nm thick, and the work is carried out at different angles of incidence. The performance of the sensor is quantified by computing the sensitivity, figure of merit, quality factor, and limit of detection values of the sensor for various blood samples. The maximum sensitivity is 1205.5 nm RIU−1 and detection limit of the order is 10−6 in this proposed work. A lower value of sensor resolution of 0.01218 is also achieved. Such a high‐performance sensor is suitable for biosensing applications with better sensing capabilities.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74574075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fei Liu, Guangwei Wang, Zixiang Huang, Juan Tian, Deliang Wang
The barrier at CdTe/metal interface severely limits the efficiency of CdTe photovoltaic devices. Herein, the effectiveness of a thermally evaporated Sb2Se3 buffer layer as a back contact in CdTe solar cells is investigated, revealing a significant enhancement in device performance. Through optimization of Sb2Se3 thickness, a remarkable increase in the open‐circuit voltage (VOC) to 804 mV is achieved, leading to a substantial efficiency improvement of 12.84% when compared to the Au‐only back contact device. X‐ray photoelectron spectroscopy (XPS) reveals a well‐matched energy band alignment at CdTe/Sb2Se3 interface, confirming favorable conditions for hole transport. To further enhance the device performance, Cu doping is implemented in the Sb2Se3 film, resulting in additional improvements to the VOC and fill factor (FF) of the Cu‐doped configuration to 819 mV and 72.35%, respectively, while also enhancing the overall efficiency to 14.3%.
{"title":"Enhanced Performance of CdTe Solar Cells with Sb2Se3 Back Contacts","authors":"Fei Liu, Guangwei Wang, Zixiang Huang, Juan Tian, Deliang Wang","doi":"10.1002/pssa.202300426","DOIUrl":"https://doi.org/10.1002/pssa.202300426","url":null,"abstract":"The barrier at CdTe/metal interface severely limits the efficiency of CdTe photovoltaic devices. Herein, the effectiveness of a thermally evaporated Sb2Se3 buffer layer as a back contact in CdTe solar cells is investigated, revealing a significant enhancement in device performance. Through optimization of Sb2Se3 thickness, a remarkable increase in the open‐circuit voltage (VOC) to 804 mV is achieved, leading to a substantial efficiency improvement of 12.84% when compared to the Au‐only back contact device. X‐ray photoelectron spectroscopy (XPS) reveals a well‐matched energy band alignment at CdTe/Sb2Se3 interface, confirming favorable conditions for hole transport. To further enhance the device performance, Cu doping is implemented in the Sb2Se3 film, resulting in additional improvements to the VOC and fill factor (FF) of the Cu‐doped configuration to 819 mV and 72.35%, respectively, while also enhancing the overall efficiency to 14.3%.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76649034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Kneissl, J. Christen, A. Hoffmann, B. Monemar, T. Wernicke, Ulrich T. Schwarz, Å. Haglund, M. Meneghini
{"title":"Nitride Semiconductors","authors":"M. Kneissl, J. Christen, A. Hoffmann, B. Monemar, T. Wernicke, Ulrich T. Schwarz, Å. Haglund, M. Meneghini","doi":"10.1002/pssa.202300484","DOIUrl":"https://doi.org/10.1002/pssa.202300484","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72517085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shengxian Wei, Fen E Hu, Li-ping Deng, Bao Yue, Yiming Cao, Xijia He, Yuanlei Zhang, Yanru Kang, K. Xu, Zhe Li
The influence of Cu doping on phase transition, thermal strain, and thermal expansion property of polycrystalline Ni50Mn23−xCuxGa27(x = 1, 3, 5, 6 and 7) alloys is investigated. The results show that with increasing Cu concentration, martensitic transformation gradually gets close to Curie transition. A magnetostructural transition (MST) is observed in samples with x = 6 and 7. Such MST can enhance magnitude of transformation strain. Besides, Ni50Mn23−xCuxGa27 alloys possess an isotropic, recoverable, and thermally stable thermal strain. Excitedly, Cu doping can effectively tune the phase transition, thermal strain, and thermal expansion properties of Ni50Mn23−xCuxGa27 alloys. Adjustable coefficients of thermal expansion from positive to negative are obtained by Cu‐doped Ni50Mn23−xCuxGa27 alloys. The average linear expansion coefficient (α) between −140.44 and −207.70 ppm K−1 is observed in samples with x = 6 and 7 for a narrow temperature span of 11–14 K. When the temperature span is about 72 K (x = 6) and 73 K (x = 7), which is the largest temperature span observed in Ni–Mn–Ga‐based alloys recently, the α values decrease to about −36 ppm K−1. These findings are beneficial for manipulating the thermal expansion property of Ni–Mn–Ga–Cu alloys and their multifunctional applications.
研究了Cu掺杂对Ni50Mn23−xCuxGa27(x = 1,3,5,6和7)合金相变、热应变和热膨胀性能的影响。结果表明:随着Cu浓度的增加，马氏体转变逐渐接近居里转变;在x = 6和7的样品中观察到磁结构转变(MST)。MST可以提高相变应变的大小。此外，Ni50Mn23−xCuxGa27合金具有各向同性、可恢复和热稳定的热应变。令人兴奋的是，Cu掺杂可以有效地调节Ni50Mn23−xCuxGa27合金的相变、热应变和热膨胀性能。Cu掺杂Ni50Mn23−xCuxGa27合金的热膨胀系数可由正向负调节。在x = 6和7的样品中，在11-14 K的狭窄温度范围内，平均线性膨胀系数(α)在- 140.44和- 207.70 ppm K - 1之间。当温度跨度为72 K (x = 6)和73 K (x = 7)时，α值降至- 36 ppm K−1左右，这是近年来在Ni-Mn-Ga基合金中观察到的最大温度跨度。这些发现有利于Ni-Mn-Ga-Cu合金的热膨胀性能调控及其多功能应用。
{"title":"Effect of Cu Doping on Phase Transition, Thermal Strain, and Thermal Expansion Property in Polycrystalline Ni50Mn23−xCuxGa27 Alloys","authors":"Shengxian Wei, Fen E Hu, Li-ping Deng, Bao Yue, Yiming Cao, Xijia He, Yuanlei Zhang, Yanru Kang, K. Xu, Zhe Li","doi":"10.1002/pssa.202300348","DOIUrl":"https://doi.org/10.1002/pssa.202300348","url":null,"abstract":"The influence of Cu doping on phase transition, thermal strain, and thermal expansion property of polycrystalline Ni50Mn23−xCuxGa27(x = 1, 3, 5, 6 and 7) alloys is investigated. The results show that with increasing Cu concentration, martensitic transformation gradually gets close to Curie transition. A magnetostructural transition (MST) is observed in samples with x = 6 and 7. Such MST can enhance magnitude of transformation strain. Besides, Ni50Mn23−xCuxGa27 alloys possess an isotropic, recoverable, and thermally stable thermal strain. Excitedly, Cu doping can effectively tune the phase transition, thermal strain, and thermal expansion properties of Ni50Mn23−xCuxGa27 alloys. Adjustable coefficients of thermal expansion from positive to negative are obtained by Cu‐doped Ni50Mn23−xCuxGa27 alloys. The average linear expansion coefficient (α) between −140.44 and −207.70 ppm K−1 is observed in samples with x = 6 and 7 for a narrow temperature span of 11–14 K. When the temperature span is about 72 K (x = 6) and 73 K (x = 7), which is the largest temperature span observed in Ni–Mn–Ga‐based alloys recently, the α values decrease to about −36 ppm K−1. These findings are beneficial for manipulating the thermal expansion property of Ni–Mn–Ga–Cu alloys and their multifunctional applications.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89788897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Compared with silver nanowires and silver nanospheres, silver nanocubes and silver nanoplates with larger curvature structures like sharp vertices and edges have great potential in optical applications. In general, the controllable joining of silver nanomaterials has become an effective way to change the electrical and optical properties of silver nanomaterials in recent years. However, urgent research on the controllable joining of silver nanocubes or silver nanocubes is still rarely reported. After being thermal treated at 250 °C for 8 min, a good joining among silver nanocubes can be obtained without significant damage to the cubic structure. For laser sintering, with the increase of laser energy input, silver nanocubes gradually transform to spherical particles. Joining among few particles can be observed when silver nanocubes are scanned by 5 W of laser at 1.0 mm s−1. Obvious joining among silver nanocubes can be obtained by thermal treating at 300 °C for 5 min and laser scanning at 7 W at 0.2 mm s−1. Thermal heating is more suitable for forming different degrees of connection between silver nanocubes or between silver nanocubes, while laser treatment is suitable for changing the shape of silver nanocubes or silver nanocubes without obvious connection.
与银纳米线和银纳米球相比，具有更大曲率结构的银纳米立方体和银纳米片在光学应用中具有很大的潜力。总的来说，银纳米材料的可控连接已成为近年来改变银纳米材料电学和光学性质的有效途径。然而，对银纳米立方体或银纳米立方体的可控连接的迫切研究仍然很少报道。在250℃下热处理8 min后，银纳米立方体之间可以得到良好的连接，而不会明显破坏立方结构。对于激光烧结，随着激光能量输入的增加，银纳米立方体逐渐转变为球形颗粒。在1.0 mm s−1波长下，用5w的激光扫描银纳米立方体时，可以观察到少数粒子之间的连接。在300°C下热处理5min，在0.2 mm s−1下激光扫描7w，可以得到银纳米立方体之间明显的连接。热加热更适合于银纳米立方体之间或银纳米立方体之间形成不同程度的连接，而激光处理适合于改变银纳米立方体或无明显连接的银纳米立方体的形状。
{"title":"Comparative Study on Thermal and Laser Sintering of Silver Nanocubes and Silver Nanoplates","authors":"Zhu Hui, X. Liu","doi":"10.1002/pssa.202200889","DOIUrl":"https://doi.org/10.1002/pssa.202200889","url":null,"abstract":"Compared with silver nanowires and silver nanospheres, silver nanocubes and silver nanoplates with larger curvature structures like sharp vertices and edges have great potential in optical applications. In general, the controllable joining of silver nanomaterials has become an effective way to change the electrical and optical properties of silver nanomaterials in recent years. However, urgent research on the controllable joining of silver nanocubes or silver nanocubes is still rarely reported. After being thermal treated at 250 °C for 8 min, a good joining among silver nanocubes can be obtained without significant damage to the cubic structure. For laser sintering, with the increase of laser energy input, silver nanocubes gradually transform to spherical particles. Joining among few particles can be observed when silver nanocubes are scanned by 5 W of laser at 1.0 mm s−1. Obvious joining among silver nanocubes can be obtained by thermal treating at 300 °C for 5 min and laser scanning at 7 W at 0.2 mm s−1. Thermal heating is more suitable for forming different degrees of connection between silver nanocubes or between silver nanocubes, while laser treatment is suitable for changing the shape of silver nanocubes or silver nanocubes without obvious connection.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90949569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Koshiba, I. Sugimoto, S. Horike, Tatsuya Fukushima, K. Ishida
{"title":"Fabrication and Local Electrical Characterization of p–n Junction Copper Phthalocyanine Nanorods","authors":"Y. Koshiba, I. Sugimoto, S. Horike, Tatsuya Fukushima, K. Ishida","doi":"10.1002/pssa.202300243","DOIUrl":"https://doi.org/10.1002/pssa.202300243","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"43 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72509282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chengyan Gu, Zhenzhong Zhang, Yukai Zhao, F. Zhao, Yana Liu, Youwei Zhang
Herein, amorphous manganese dioxide (AMO) is prepared by the liquid‐phase coprecipitation method, the effect of heat treatment temperature on the microstructure, and phase composition of AMO and the electrochemical properties as cathode materials for aqueous Zn–MnO2 batteries are investigated. The results show that the AMO didn't crystallize at 250 °C, but its structure stability increases. When the temperature is 350 and 400 °C, part of the AMO crystallizes into rod‐shaped nano‐α‐MnO2 crystals. At 540 °C, the products crystallize into nano‐α‐MnO2 crystals. Continuing to increase the temperature to 650 °C, the structural stability of the products is further improved. Heat treatment leads to reduced specific surface area and porosity of the material, which in turn leads to reduced specific capacity and cycling stability. In addition, the heat‐treated products show a sharp drop in capacity during the discharge process; this was because the volume change caused by the irreversible phase change of the electrode material is difficult to release in the anisotropic crystal, resulting in the collapse of the structure. This study shows that unheated AMO is better than heat‐treated AMO as a cathode material for aqueous Zn–MnO2 battery cathode material in terms of overall performance and cost.
{"title":"Effect of Heat Treatment on the Crystallization Behavior of Amorphous Manganese Dioxide and its Electrochemical Properties in Zinc‐Ion Battery Cathodes","authors":"Chengyan Gu, Zhenzhong Zhang, Yukai Zhao, F. Zhao, Yana Liu, Youwei Zhang","doi":"10.1002/pssa.202300329","DOIUrl":"https://doi.org/10.1002/pssa.202300329","url":null,"abstract":"Herein, amorphous manganese dioxide (AMO) is prepared by the liquid‐phase coprecipitation method, the effect of heat treatment temperature on the microstructure, and phase composition of AMO and the electrochemical properties as cathode materials for aqueous Zn–MnO2 batteries are investigated. The results show that the AMO didn't crystallize at 250 °C, but its structure stability increases. When the temperature is 350 and 400 °C, part of the AMO crystallizes into rod‐shaped nano‐α‐MnO2 crystals. At 540 °C, the products crystallize into nano‐α‐MnO2 crystals. Continuing to increase the temperature to 650 °C, the structural stability of the products is further improved. Heat treatment leads to reduced specific surface area and porosity of the material, which in turn leads to reduced specific capacity and cycling stability. In addition, the heat‐treated products show a sharp drop in capacity during the discharge process; this was because the volume change caused by the irreversible phase change of the electrode material is difficult to release in the anisotropic crystal, resulting in the collapse of the structure. This study shows that unheated AMO is better than heat‐treated AMO as a cathode material for aqueous Zn–MnO2 battery cathode material in terms of overall performance and cost.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76176488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jen-Wei Huang, Po-Hsun Chen, Tsung-Han Yeh, Chih-Cheng Yang
A sulfur treatment based on the supercritical fluid (SCF) treatment is proposed and its effect on the silver (Ag)‐doped material and device is investigated. The sulfur treatment is achieved by mixing sulfur powder with carbon dioxide (CO2) in a reaction chamber under high pressure (3000 psi) at low reacting temperature (120 °C). Based on the experimental results, the SCF sulfur treatment can dramatically change the Ag‐doped SiO2 (Ag:SiO2) thin‐film characteristics, including surface morphology, crystallization, chemical bonding, and mole elements in accordance with the analyses of various materials. In addition, the SCF sulfur treatment is also applied to the Ag:SiO2‐based device to verify the resistance switching (RS) properties. Based on electrical measurement results, the device with the SCF sulfur treatment exhibits better performance. The graduate RS behaviors also exhibit multilevel switching in both set and reset processes, which proves its possible applications of the proposed SCF sulfur treatment. In addition, the current fitting method is used to verify the RS properties to illustrate the carrier transportation characteristics of the Ag:SiO2‐based device with the SCF sulfur treatment.
{"title":"Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique","authors":"Jen-Wei Huang, Po-Hsun Chen, Tsung-Han Yeh, Chih-Cheng Yang","doi":"10.1002/pssa.202300453","DOIUrl":"https://doi.org/10.1002/pssa.202300453","url":null,"abstract":"A sulfur treatment based on the supercritical fluid (SCF) treatment is proposed and its effect on the silver (Ag)‐doped material and device is investigated. The sulfur treatment is achieved by mixing sulfur powder with carbon dioxide (CO2) in a reaction chamber under high pressure (3000 psi) at low reacting temperature (120 °C). Based on the experimental results, the SCF sulfur treatment can dramatically change the Ag‐doped SiO2 (Ag:SiO2) thin‐film characteristics, including surface morphology, crystallization, chemical bonding, and mole elements in accordance with the analyses of various materials. In addition, the SCF sulfur treatment is also applied to the Ag:SiO2‐based device to verify the resistance switching (RS) properties. Based on electrical measurement results, the device with the SCF sulfur treatment exhibits better performance. The graduate RS behaviors also exhibit multilevel switching in both set and reset processes, which proves its possible applications of the proposed SCF sulfur treatment. In addition, the current fitting method is used to verify the RS properties to illustrate the carrier transportation characteristics of the Ag:SiO2‐based device with the SCF sulfur treatment.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"103 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76213188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. K. Sethy, K. J. Sankaran, Prasanth Gupta, Joseph Palathinkal Thomas, Ajit Dash, John V. Kennedy, Kam Tong Leung, Ken Haenen
N‐ and P‐co‐ion implantation enhances the electrical conductivity of nanocrystalline diamond films to 6.9 s cm−1 and improves the microplasma illumination (MI) characteristics of the films to a low breakdown voltage of 340 V, large plasma current density of 6.3 mA cm−2 (@510 V) with plasma life‐time stability of 10 h. N ions induce nanographitic phases in the films and P ions lower the resistance at the diamond‐to‐Si interface together promoting the conducting channels for effective electron transport, consequently attaining the improved MI properties of the films.
N -和P - co - ion注入将纳米晶金刚石薄膜的电导率提高到6.9 s cm - 1，并将薄膜的微等离子体照明(MI)特性提高到340 V的低击穿电压，6.3 mA cm - 2 (@510 V)的大等离子体电流密度，等离子体寿命稳定性为10 h。N离子在薄膜中诱导纳米相，P离子降低了金刚石-硅界面的电阻，共同促进了有效电子传递的传导通道，从而提高了薄膜的MI性能。
{"title":"Microplasma Illumination Enhancement in N+P‐Co‐Ion‐Implanted Nanocrystalline Diamond Films","authors":"S. K. Sethy, K. J. Sankaran, Prasanth Gupta, Joseph Palathinkal Thomas, Ajit Dash, John V. Kennedy, Kam Tong Leung, Ken Haenen","doi":"10.1002/pssa.202300157","DOIUrl":"https://doi.org/10.1002/pssa.202300157","url":null,"abstract":"N‐ and P‐co‐ion implantation enhances the electrical conductivity of nanocrystalline diamond films to 6.9 s cm−1 and improves the microplasma illumination (MI) characteristics of the films to a low breakdown voltage of 340 V, large plasma current density of 6.3 mA cm−2 (@510 V) with plasma life‐time stability of 10 h. N ions induce nanographitic phases in the films and P ions lower the resistance at the diamond‐to‐Si interface together promoting the conducting channels for effective electron transport, consequently attaining the improved MI properties of the films.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90113721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A modified design of the a‐Si thin‐film solar cell (TFSC) is presented. The c‐Si cap layer is introduced to increase the photon absorption and hence the enhanced photo carriers increase the overall short‐circuit current. Whereas, the highly doped a‐Si passivation layer reduces the minority carrier flow and recombination at the rear side of the cell, and therefore the passivation layer is used to improve the open‐circuit voltage ( V oc ). The performance optimization and investigation of the cell characteristic is executed using the numerical simulation methodology. To further enhance the cell efficiency, the thickness and doping concentration of the c‐Si cap and a‐Si passivation layer are optimized. The improvement in absorption and passivation quality of the cell leads to the enhancement of 10.54 % in short‐circuit current density and 71.51 % improvement in the V oc , respectively. The designed a‐Si TFSC absorbs the incoming solar spectrum from 300 to 850 nm of wavelength and rest of the spectrum is transmitted. The external and internal quantum efficiency of the cell is well over 95 % . The optimized efficiency of 15.33 % is obtained for the designed cap layered a‐Si passivated cell in AM1.5 G environment using ray‐tracing methodology.
{"title":"Optimization of a‐Si Thin‐Film Solar‐Cell Performance with Passivation and c‐Si Cap Layer","authors":"M. Verma, S. Routray, G. S. Sahoo, G. P. Mishra","doi":"10.1002/pssa.202300213","DOIUrl":"https://doi.org/10.1002/pssa.202300213","url":null,"abstract":"A modified design of the a‐Si thin‐film solar cell (TFSC) is presented. The c‐Si cap layer is introduced to increase the photon absorption and hence the enhanced photo carriers increase the overall short‐circuit current. Whereas, the highly doped a‐Si passivation layer reduces the minority carrier flow and recombination at the rear side of the cell, and therefore the passivation layer is used to improve the open‐circuit voltage ( V oc ). The performance optimization and investigation of the cell characteristic is executed using the numerical simulation methodology. To further enhance the cell efficiency, the thickness and doping concentration of the c‐Si cap and a‐Si passivation layer are optimized. The improvement in absorption and passivation quality of the cell leads to the enhancement of 10.54 % in short‐circuit current density and 71.51 % improvement in the V oc , respectively. The designed a‐Si TFSC absorbs the incoming solar spectrum from 300 to 850 nm of wavelength and rest of the spectrum is transmitted. The external and internal quantum efficiency of the cell is well over 95 % . The optimized efficiency of 15.33 % is obtained for the designed cap layered a‐Si passivated cell in AM1.5 G environment using ray‐tracing methodology.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"633 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78980824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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