This study investigates the field-induced ferroelectric (FFE) characteristics and dynamic random access memory (DRAM) performance of Y-doped Hf0.5Zr0.5O2 (Y:Hf0.5Zr0.5O2) thin films grown by atomic layer deposition (ALD). Compared with undoped Hf0.5Zr0.5O2, the Y:Hf0.5Zr0.5O2 film exhibited suppressed ferroelectric orthorhombic phase and stabilized FFE tetragonal phase, resulting in double hysteresis loop characteristics in the polarization-electric field curves. These changes were attributed to substitutional diffusion of Y ions introduced by a single ALD cycle of Y2O3 inserted in the middle of the film. However, the onset field of the FFE effect from the pristine film was too high for DRAM application. To address this issue, a stepwise cycling method was proposed, consisting of an initial short high-field cycling step (6 MV cm-1, 105 cycles, 1 second) followed by subsequent cycles at gradually decreased field amplitudes (5 MV cm-1, 105 cycles, 1 second → 4 MV cm-1, 107 cycles, 100 seconds). This approach effectively shifted the FFE switching peaks toward lower fields, enabling charge boosting at low voltage (±0.8 V) while minimizing increases in remanent polarization and leakage current density (J). Consequently, the stepwise cycled 5.5-nm-thick Y:Hf0.5Zr0.5O2 film achieved a high dielectric permittivity (k) of ∼68 and a record-low equivalent oxide thickness (EOT) of ∼0.31 nm among dielectric thin films satisfying the DRAM J criterion (J < 10-7 A cm-2 at 0.8 V). The substantial EOT reduction with stepwise cycling was enabled by the low-voltage charge-boosting effect, which enhanced the field-induced polarization response. These improvements were attributed to dopant-induced local structural inhomogeneity and effective redistribution of double positively charged oxygen vacancies. The EOT values were sustained with only slight degradation over 109 cycles of 0.8 V operation and fully recovered after short high-field cycling.
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