Pub Date : 2023-03-01DOI: 10.15251/cl.2023.203.205
I. Nkrumah, F. Ampong, A. Britwum, M. Paal, B. Kwakye-Awuah, R. K. Nkum, F. Boakye
{"title":"Determining the majority charge carrier, optical and structural properties of electrochemically deposited lead tin sulfide (PbSnS) thin films","authors":"I. Nkrumah, F. Ampong, A. Britwum, M. Paal, B. Kwakye-Awuah, R. K. Nkum, F. Boakye","doi":"10.15251/cl.2023.203.205","DOIUrl":"https://doi.org/10.15251/cl.2023.203.205","url":null,"abstract":"","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43700584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-01DOI: 10.15251/cl.2023.203.177
A. F. Qasrawi, H. Khanfar
Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO2 onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing dependent rectification ratios. The devices showed metal-oxide-semiconductor character under reverse biasing conditions. In addition, the biasing dependent capacitance and conductance spectral studies in the frequency domain of 20M-1000MHz has shown the possibility of switching the capacitance and negative conductance from negative mode to positive mode. The features of the Ge/SeO2 devices make them attractive for use in electronic circuits as parasitic capacitive circuit elements, noise reducers, signal amplifiers and microwave oscillators.
{"title":"Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources","authors":"A. F. Qasrawi, H. Khanfar","doi":"10.15251/cl.2023.203.177","DOIUrl":"https://doi.org/10.15251/cl.2023.203.177","url":null,"abstract":"Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO2 onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing dependent rectification ratios. The devices showed metal-oxide-semiconductor character under reverse biasing conditions. In addition, the biasing dependent capacitance and conductance spectral studies in the frequency domain of 20M-1000MHz has shown the possibility of switching the capacitance and negative conductance from negative mode to positive mode. The features of the Ge/SeO2 devices make them attractive for use in electronic circuits as parasitic capacitive circuit elements, noise reducers, signal amplifiers and microwave oscillators.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43231190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A thin film of AgInSe2 and Ag1-xCuxInSe2 as well as n-Ag1-xCuxInSe2 /p-Si heterojunction with different Cu ratios (0, 0.1, 0.2) has been successfully fabricated by thermal evaporation method as absorbent layer with thickness about 700 nm and ZnTe as window layer with thickness about 100 nm. We made a multi-layer of p-ZnTe/n-AgCuInSe2/p-Si structures, In the present work, the conversion efficiency (η) increased when added the Cu and when used p-ZnTe as a window layer (WL) the bandgap energy of the direct transition decreases from 1.75 eV (Cu=0.0) to 1.48 eV (Cu=0.2 nm) and the bandgap energy for ZnTe=2.35 eV. The measurements of the electrical properties for prepared films showed that the D.C electrical conductivity (σd.c) increased with increasing Cu content for AgCuInSe2 thin films. So the electrical conductivity changed from 1 (Ω.cm)-1 to 29.96 (Ω.cm)-1 when x changed from 0.0 to 0.2. The prepared thin films have two activation energies (Ea1 & Ea2) in the temperature ranges of (300-393) K and (303-473) K. The C-V measurements revealed that all prepared heterojunctions were of the abrupt type and the junction capacitance reduced while the width of depletion region and the built-in potential increased with increasing the Cooper content. The current-voltage characteristics under dark condition of AgCuInSe2 heterojunctions, the current-voltage measurements under illumination showed that the performance of heterojunction solar cell improved with increasing Cu content. The result indicated that the prepared solar cell with 0.2 Ag content exhibited the highest efficiency (η = 1.68%) compared to other prepared solar cells.
{"title":"Studying the effect of copper on the p-ZnTe/n-AgCuInSe2/p-Si for thin films solar cell applications","authors":"R. H. Athab, B. H. Hussein","doi":"10.15251/cl.2023.202.91","DOIUrl":"https://doi.org/10.15251/cl.2023.202.91","url":null,"abstract":"A thin film of AgInSe2 and Ag1-xCuxInSe2 as well as n-Ag1-xCuxInSe2 /p-Si heterojunction with different Cu ratios (0, 0.1, 0.2) has been successfully fabricated by thermal evaporation method as absorbent layer with thickness about 700 nm and ZnTe as window layer with thickness about 100 nm. We made a multi-layer of p-ZnTe/n-AgCuInSe2/p-Si structures, In the present work, the conversion efficiency (η) increased when added the Cu and when used p-ZnTe as a window layer (WL) the bandgap energy of the direct transition decreases from 1.75 eV (Cu=0.0) to 1.48 eV (Cu=0.2 nm) and the bandgap energy for ZnTe=2.35 eV. The measurements of the electrical properties for prepared films showed that the D.C electrical conductivity (σd.c) increased with increasing Cu content for AgCuInSe2 thin films. So the electrical conductivity changed from 1 (Ω.cm)-1 to 29.96 (Ω.cm)-1 when x changed from 0.0 to 0.2. The prepared thin films have two activation energies (Ea1 & Ea2) in the temperature ranges of (300-393) K and (303-473) K. The C-V measurements revealed that all prepared heterojunctions were of the abrupt type and the junction capacitance reduced while the width of depletion region and the built-in potential increased with increasing the Cooper content. The current-voltage characteristics under dark condition of AgCuInSe2 heterojunctions, the current-voltage measurements under illumination showed that the performance of heterojunction solar cell improved with increasing Cu content. The result indicated that the prepared solar cell with 0.2 Ag content exhibited the highest efficiency (η = 1.68%) compared to other prepared solar cells.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43122126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-23DOI: 10.15251/cl.2023.202.121
N. K. Cinsy, R. Jeya Geetha
The characterizations of synthesized CdZnS nanoparticles with Clitoria ternatea (Asian pigeon wings) leaf extract were done by the chemical precipitation method. The formation of CdZnS nanoparticles with the extract was confirmed by making use of XRD, SEM analysis and EDAX. XRD disclosed the structure and also the particle size. SEM investigation of CdZnS NPs confirmed shape and size. The optical studies were executed for the prepared sample. From the obtained UV-visible spectrum, band gap energy was determined using the Tauc plot. The photocatalytic activity of the processed sample was also analysed.
{"title":"Characterization and photocatalytic activity of CdZnS nanoparticles incorporated with medicative leaf excerpt","authors":"N. K. Cinsy, R. Jeya Geetha","doi":"10.15251/cl.2023.202.121","DOIUrl":"https://doi.org/10.15251/cl.2023.202.121","url":null,"abstract":"The characterizations of synthesized CdZnS nanoparticles with Clitoria ternatea (Asian pigeon wings) leaf extract were done by the chemical precipitation method. The formation of CdZnS nanoparticles with the extract was confirmed by making use of XRD, SEM analysis and EDAX. XRD disclosed the structure and also the particle size. SEM investigation of CdZnS NPs confirmed shape and size. The optical studies were executed for the prepared sample. From the obtained UV-visible spectrum, band gap energy was determined using the Tauc plot. The photocatalytic activity of the processed sample was also analysed.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42184553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-23DOI: 10.15251/cl.2023.202.101
R. Gupta, P. Varshney, Pravesh, M. Lal, D. Kumar, K. Singh, A. Verma
A study of experimental data reveals that the bulk modulus of chalcogenides and pnictides based chalcopyrites (AIIBIVC2 V and AI BIIIC2 VI) can be explained by a simple scaling rule that rely only on the crystal ionicity, ionic charge product, and the melting temperature. PVV theory of crystal ionicity, temperature dependence of elasticity and product of ionic charge theory are taken into account for the study. Based on this result, a simple microhardnessbulk modulus relation is applied to evaluate the microhardness of the complex compounds; which correspond well with the experimental data and other published results. The proposed findings support in the modeling of emerging semiconductor materials and even understanding of their mechanical properties for optoelectronics, photovoltaic, electromagnetic (EM) screening, and spintronic applications. PACS: 62.20.-x; 62.20.Qp
{"title":"Mechanical stability parameters of chalcogenides and pnictides based optoelectronic materials","authors":"R. Gupta, P. Varshney, Pravesh, M. Lal, D. Kumar, K. Singh, A. Verma","doi":"10.15251/cl.2023.202.101","DOIUrl":"https://doi.org/10.15251/cl.2023.202.101","url":null,"abstract":"A study of experimental data reveals that the bulk modulus of chalcogenides and pnictides based chalcopyrites (AIIBIVC2 V and AI BIIIC2 VI) can be explained by a simple scaling rule that rely only on the crystal ionicity, ionic charge product, and the melting temperature. PVV theory of crystal ionicity, temperature dependence of elasticity and product of ionic charge theory are taken into account for the study. Based on this result, a simple microhardnessbulk modulus relation is applied to evaluate the microhardness of the complex compounds; which correspond well with the experimental data and other published results. The proposed findings support in the modeling of emerging semiconductor materials and even understanding of their mechanical properties for optoelectronics, photovoltaic, electromagnetic (EM) screening, and spintronic applications. PACS: 62.20.-x; 62.20.Qp","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43274250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-23DOI: 10.15251/cl.2023.202.153
Y. L. Ma, Y. Tao
The key to achieve efficient degradation of organic pollutants lies in improving the separation efficiency of photogenerated electron-hole pairs in photocatalysts. Here, the hydrogen bonds between g-C3N4 layers were broken by concentrated acid etching and exfoliation to obtain a more dispersed and lighter g-C3N4 nanosheet structure, and then the CdS spherical nanoparticles were dispersed on g-C3N4 nanosheets by hydrothermal method. The optimal loading of CdS on g-C3N4 nanosheets was determined by testing the degradation performance of the composite photocatalysts with different loading amounts. The degradation performance was tested by simulating sunlight using a 700-800 W xenon lamp equipped with a 420 nm cut-off filter, which showed that the degradation of MB by 7% CdS/g-C3N4 photocatalyst was 90.7% for MB. It indicates that concentrated acid treatment and loading of CdS nanoparticles can significantly improve the photocatalytic activity of g-C3N4 nanosheets, which is attributed to the enhancedup conversion function of g-C3N4 by loading CdS to enhance the response range and ability of g-C3N4 in visible light and the photogenerated electron-hole pair separation rate by loading CdS, thus improving the photocatalytic performance of the composite.
{"title":"Preparation of CdS/g-C3N4 heterojunction photocatalyst with high activity sites by acid treatment","authors":"Y. L. Ma, Y. Tao","doi":"10.15251/cl.2023.202.153","DOIUrl":"https://doi.org/10.15251/cl.2023.202.153","url":null,"abstract":"The key to achieve efficient degradation of organic pollutants lies in improving the separation efficiency of photogenerated electron-hole pairs in photocatalysts. Here, the hydrogen bonds between g-C3N4 layers were broken by concentrated acid etching and exfoliation to obtain a more dispersed and lighter g-C3N4 nanosheet structure, and then the CdS spherical nanoparticles were dispersed on g-C3N4 nanosheets by hydrothermal method. The optimal loading of CdS on g-C3N4 nanosheets was determined by testing the degradation performance of the composite photocatalysts with different loading amounts. The degradation performance was tested by simulating sunlight using a 700-800 W xenon lamp equipped with a 420 nm cut-off filter, which showed that the degradation of MB by 7% CdS/g-C3N4 photocatalyst was 90.7% for MB. It indicates that concentrated acid treatment and loading of CdS nanoparticles can significantly improve the photocatalytic activity of g-C3N4 nanosheets, which is attributed to the enhancedup conversion function of g-C3N4 by loading CdS to enhance the response range and ability of g-C3N4 in visible light and the photogenerated electron-hole pair separation rate by loading CdS, thus improving the photocatalytic performance of the composite.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49278113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-23DOI: 10.15251/cl.2023.202.113
A. Aqili, T. Abu-Omar, A. Al-Reyahi, A. Shaheen, S. Al-Omari, I. Alhagish
Zinc Telluride (ZnTe) films were prepared by the closed space sublimation (CSS) method. The effect of chemical treatments with concentrated phosphoric acid, on the optical, electric and structural properties of the films was studied. Zinc-blend structure of the polycrystalline nature of the films was confirmed by x-ray diffraction (XRD) spectra. The energy dispersive x-ray (EDX) shows an increase in Te ratio on the surface of the film as exposed to phosphoric acid. In addition, the dc electrical resistivity of the films was dropped considerably. The refractive index, thickness, and thickness irregularity of the films were determined by fitting of the optical transmittance spectra in the wavelength range 400 to 2500 nm. The effect, of treatment, on the optical parameters is also reported.
{"title":"Effect of phosphoric acid treatment on the physical properties of zinc telluride thin films","authors":"A. Aqili, T. Abu-Omar, A. Al-Reyahi, A. Shaheen, S. Al-Omari, I. Alhagish","doi":"10.15251/cl.2023.202.113","DOIUrl":"https://doi.org/10.15251/cl.2023.202.113","url":null,"abstract":"Zinc Telluride (ZnTe) films were prepared by the closed space sublimation (CSS) method. The effect of chemical treatments with concentrated phosphoric acid, on the optical, electric and structural properties of the films was studied. Zinc-blend structure of the polycrystalline nature of the films was confirmed by x-ray diffraction (XRD) spectra. The energy dispersive x-ray (EDX) shows an increase in Te ratio on the surface of the film as exposed to phosphoric acid. In addition, the dc electrical resistivity of the films was dropped considerably. The refractive index, thickness, and thickness irregularity of the films were determined by fitting of the optical transmittance spectra in the wavelength range 400 to 2500 nm. The effect, of treatment, on the optical parameters is also reported.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46788850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Poornaprakash, P. Puneetha, M. P. Reddy, Y. L. Kim
ZnS and Er (2 at%) doped ZnS nanoparticles (NPs) were synthesized through coprecipitation process. EDAX analysis confirmed that the presence of Er (III) ions in the prepared sample with an anticipated stoichiometry. TEM analyses displayed that the prepared NPs showed near spheroid shapes with an average size ranging from 4.8 to 5.2 nm. XRD measurements confirmed the authentic incorporation of Er (III) ions in the ZnS lattice. DRS measurements certified that Er (III) doping declines the ZnS bandgap from 3.72 to 3.56 eV. Magnetic measurements revealed that the Er-doped ZnS NPs displayed soft ferromagnetism and became better at higher doping concentrations. The Er (2 at%) doped ZnS NPs exhibited a higher rhodamine B dye degradation rate than the ZnS. Hence, the Er doped ZnS NPs are promising materials for dye degradation and optoelectronics.
{"title":"Structural, optical, and photocatalytic activity of ZnS:Er nanoparticles","authors":"B. Poornaprakash, P. Puneetha, M. P. Reddy, Y. L. Kim","doi":"10.15251/cl.2023.202.85","DOIUrl":"https://doi.org/10.15251/cl.2023.202.85","url":null,"abstract":"ZnS and Er (2 at%) doped ZnS nanoparticles (NPs) were synthesized through coprecipitation process. EDAX analysis confirmed that the presence of Er (III) ions in the prepared sample with an anticipated stoichiometry. TEM analyses displayed that the prepared NPs showed near spheroid shapes with an average size ranging from 4.8 to 5.2 nm. XRD measurements confirmed the authentic incorporation of Er (III) ions in the ZnS lattice. DRS measurements certified that Er (III) doping declines the ZnS bandgap from 3.72 to 3.56 eV. Magnetic measurements revealed that the Er-doped ZnS NPs displayed soft ferromagnetism and became better at higher doping concentrations. The Er (2 at%) doped ZnS NPs exhibited a higher rhodamine B dye degradation rate than the ZnS. Hence, the Er doped ZnS NPs are promising materials for dye degradation and optoelectronics.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42608559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-23DOI: 10.15251/cl.2023.202.145
H. K. Hassun, B. K. Al-Maiyaly, A. H. Shaban
In this work, we have examined the spectral response of (p-CuAlSe2/n-Si) detector, (CAS) thin films deposited by thermal evaporation at RT with a thickness (450) nm, and annealing temperature at (473K) for 2 h. Optical transmission measurements displayed reasonably slight transmission besides higher absorbance trendy the visible region, energy gaps were observed by annealing, were found to be direct, and decreased with the effect of annealing. The extreme responsivity value arises at wavelength 459 nm, with improvement value of specific detectivity and quantum efficiency the annealing films be situated originate as greatest suitable aimed at numerous device application.
{"title":"Fabrication and evaluation of CuAlSe2/Si photodetector","authors":"H. K. Hassun, B. K. Al-Maiyaly, A. H. Shaban","doi":"10.15251/cl.2023.202.145","DOIUrl":"https://doi.org/10.15251/cl.2023.202.145","url":null,"abstract":"In this work, we have examined the spectral response of (p-CuAlSe2/n-Si) detector, (CAS) thin films deposited by thermal evaporation at RT with a thickness (450) nm, and annealing temperature at (473K) for 2 h. Optical transmission measurements displayed reasonably slight transmission besides higher absorbance trendy the visible region, energy gaps were observed by annealing, were found to be direct, and decreased with the effect of annealing. The extreme responsivity value arises at wavelength 459 nm, with improvement value of specific detectivity and quantum efficiency the annealing films be situated originate as greatest suitable aimed at numerous device application.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48528314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-23DOI: 10.15251/cl.2023.202.131
I. Ur Rahman, M. Khalid, M. Aamer, F. Ali, Muhammad Umair Javed, Q. Rafiq, M. Jawad, T. Raouf Qureshi, M. Irfan, S. Azam
We presents our analysis on structural electronic and optical properties of TlX and TlMX2 (M =In, Ga; X = Te, Se, S) compound, by first principle density functional theory (DFT).These chalcogenide have a place with a group of the low-dimensionals semiconductors having chains or layered design. They are of critical interested as a result of, their exceptionally anisotropics properties, semiconductivity and photoconductivity, non direct impacts in their IV qualities (counting a district of negatived differentials opposition), exchanging and memories impacts, secondly symphonious opticals age, relaxors conduct and possible application for optoelectronics devices. We reviews the crystals structured of TlMX2 compound, their transports properties below surrounding condition, test and hypothetical investigations of the electronics construction, transports properties and semiconductors metal phased transition below highly tension, and successions of temperature instigated primary phased transition with middle disproportionate state. Electronics natured of the ferroelectrics phased transition in the previously mentione mixes, just as arelaxors conduct, nano domain and conceivable event of quantums specks in dopeds and illuminated precious crystals are examined.
{"title":"Tuned optoelectronic and thermoelectric properties of TIMX2 through M=Ga,In X=S,Se,Te intercalation","authors":"I. Ur Rahman, M. Khalid, M. Aamer, F. Ali, Muhammad Umair Javed, Q. Rafiq, M. Jawad, T. Raouf Qureshi, M. Irfan, S. Azam","doi":"10.15251/cl.2023.202.131","DOIUrl":"https://doi.org/10.15251/cl.2023.202.131","url":null,"abstract":"We presents our analysis on structural electronic and optical properties of TlX and TlMX2 (M =In, Ga; X = Te, Se, S) compound, by first principle density functional theory (DFT).These chalcogenide have a place with a group of the low-dimensionals semiconductors having chains or layered design. They are of critical interested as a result of, their exceptionally anisotropics properties, semiconductivity and photoconductivity, non direct impacts in their IV qualities (counting a district of negatived differentials opposition), exchanging and memories impacts, secondly symphonious opticals age, relaxors conduct and possible application for optoelectronics devices. We reviews the crystals structured of TlMX2 compound, their transports properties below surrounding condition, test and hypothetical investigations of the electronics construction, transports properties and semiconductors metal phased transition below highly tension, and successions of temperature instigated primary phased transition with middle disproportionate state. Electronics natured of the ferroelectrics phased transition in the previously mentione mixes, just as arelaxors conduct, nano domain and conceivable event of quantums specks in dopeds and illuminated precious crystals are examined.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41998968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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