Pub Date : 2023-07-05DOI: 10.15251/cl.2023.206.393
S. Kumar, P. Kumar, S. Sahni, S. Singh, K. Singh
Differential Scanning Calorimetry (DSC) is performed at different heating rates under non-isothermal conditions to study the heat capacities studies of glassy Se75Te15- XCd10InX(x=0, 5,10and 15) alloys.Heat capacities of Se75Te15-XCd10InX(x=0, 5,10and 15) chalcogenide glasses at glass transitions (Tg) and crystallisations temperatures (Tc) werementioned in this work. The evaluated endothermic (ΔCpg) and exothermic (ΔCpc) heat capacities of Se-Te-Cd-In system varies with alloying concentrations and maximum at threshold composition (5 at wt.% of In). This could be explained on the basis of chemical bond theory of the solids.
{"title":"Composition dependence of heat capacity in Se75Te15-XCd10InX(x=0, 5,10 and 15) chalcogenide glasses","authors":"S. Kumar, P. Kumar, S. Sahni, S. Singh, K. Singh","doi":"10.15251/cl.2023.206.393","DOIUrl":"https://doi.org/10.15251/cl.2023.206.393","url":null,"abstract":"Differential Scanning Calorimetry (DSC) is performed at different heating rates under non-isothermal conditions to study the heat capacities studies of glassy Se75Te15- XCd10InX(x=0, 5,10and 15) alloys.Heat capacities of Se75Te15-XCd10InX(x=0, 5,10and 15) chalcogenide glasses at glass transitions (Tg) and crystallisations temperatures (Tc) werementioned in this work. The evaluated endothermic (ΔCpg) and exothermic (ΔCpc) heat capacities of Se-Te-Cd-In system varies with alloying concentrations and maximum at threshold composition (5 at wt.% of In). This could be explained on the basis of chemical bond theory of the solids.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48700444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-05DOI: 10.15251/cl.2023.206.423
A. Kafel, S. N. Turki Al-Rashid
The study of confined quantum systems exhibit distinct behavior compared to that in bulk solids. This enables the design of materials with tunable chemical, physical, electrical and optical properties. In this paper, the effect of quantum confinement energy on the optical properties (gap energy, refractive index) of semiconductors gallium nitrate (GaN) and zinc sulfide (ZnS) is studied. The study is done using the MATLAB computer program (20a). This software is based on the Brus model and the particle in-a-box model. The results indicate that the optical properties depend on the quantum confinement energy, with an increase in quantum confinement energy corresponding to an increase in the energy gap and a decrease in refractive index.
{"title":"Examining the impact of quantum confinement energy on the optical characteristics of zinc sulfide and gallium nitrate in the ultraviolet spectral range","authors":"A. Kafel, S. N. Turki Al-Rashid","doi":"10.15251/cl.2023.206.423","DOIUrl":"https://doi.org/10.15251/cl.2023.206.423","url":null,"abstract":"The study of confined quantum systems exhibit distinct behavior compared to that in bulk solids. This enables the design of materials with tunable chemical, physical, electrical and optical properties. In this paper, the effect of quantum confinement energy on the optical properties (gap energy, refractive index) of semiconductors gallium nitrate (GaN) and zinc sulfide (ZnS) is studied. The study is done using the MATLAB computer program (20a). This software is based on the Brus model and the particle in-a-box model. The results indicate that the optical properties depend on the quantum confinement energy, with an increase in quantum confinement energy corresponding to an increase in the energy gap and a decrease in refractive index.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44325612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-05DOI: 10.15251/cl.2023.206.409
G. Jiao, G. L. Liu, L. Wei, J. Zhao, G. Zhang
Using density functional theory, the effect of biaxial tensile strain on adsorption of S in ReS2 monolayer is calculated. The study finds intrinsic ReS2 system and monolayer ReS2 adsorbed S system are affected by tensile deformation. Intrinsic ReS2 has direct band gap. As S appears, the system becomes indirect band gap. With tensile deformation amount of the intrinsic ReS2 system reaching 10%, the band gap reduces to 0.064eV. The growth rate of reflection and absorption coefficient are decreased by tensile deformation. The maximum reflection and absorption peak undergo red shift, improving the light reflection and absorption ability of adsorption system
{"title":"Tensile deformation of S adsorbed in a monolayer of ReS2 affects its electronic structure and optical properties","authors":"G. Jiao, G. L. Liu, L. Wei, J. Zhao, G. Zhang","doi":"10.15251/cl.2023.206.409","DOIUrl":"https://doi.org/10.15251/cl.2023.206.409","url":null,"abstract":"Using density functional theory, the effect of biaxial tensile strain on adsorption of S in ReS2 monolayer is calculated. The study finds intrinsic ReS2 system and monolayer ReS2 adsorbed S system are affected by tensile deformation. Intrinsic ReS2 has direct band gap. As S appears, the system becomes indirect band gap. With tensile deformation amount of the intrinsic ReS2 system reaching 10%, the band gap reduces to 0.064eV. The growth rate of reflection and absorption coefficient are decreased by tensile deformation. The maximum reflection and absorption peak undergo red shift, improving the light reflection and absorption ability of adsorption system","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43591184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-05DOI: 10.15251/cl.2023.206.399
I. Nkrumah, F. Ampong, A. Britwum, M. Paal, B. Kwakye-Awuah, R. K. Nkum, F. Boakye
A study has been carried out to investigate the effect of the concentration of Sn in the metallic precursor on the structure, morphology, optical and electrical properties of PbSnS thin films. The films were directly electrodeposited on ITO-coated glass substrates using a 3-electrode electrochemical cell having graphite as the counter electrode and Ag/AgCl as the reference electrode. Several depositions were carried out, with each deposited film having a different concentration of Sn in the metallic precursor whilst all other parameters were kept constant for all the films. Post deposition annealing was carried out in air at 250 o C for an hour. A variety of techniques were used to characterize the films. Results showed that the increase in Sn concentration did not modify the structure and preferred orientation of the films. However, it caused a slight increase in the average grain size of the films and electrical conductivity. All the films showed direct transition with the optical band gap reducing with increasing Sn concentration. The refractive index of the films showed anomalous dispersion behaviour within the UV region, and normal dispersion in the visible and infrared regions, whilst following an increasing trend with the grain size. SEM image showed spherically shaped grains of different sizes distributed randomly with good coverage across the entire area of the substrate. The EDAX spectrum was consistent with formation of the ternary PbSnS compound on ITO-coated glass substrate. Overall results indicate that, the optical and electrical properties of the electrochemically deposited PbSnS thin films can be tuned to make them suitable for specific applications by varying the concentration of Sn in the metallic precursor.
{"title":"The effect of the concentration of tin (Sn) in the metallic precursor, on the structure, morphology, optical and electrical properties of electrochemically deposited lead-tin-sulphide (PbSnS) thin films","authors":"I. Nkrumah, F. Ampong, A. Britwum, M. Paal, B. Kwakye-Awuah, R. K. Nkum, F. Boakye","doi":"10.15251/cl.2023.206.399","DOIUrl":"https://doi.org/10.15251/cl.2023.206.399","url":null,"abstract":"A study has been carried out to investigate the effect of the concentration of Sn in the metallic precursor on the structure, morphology, optical and electrical properties of PbSnS thin films. The films were directly electrodeposited on ITO-coated glass substrates using a 3-electrode electrochemical cell having graphite as the counter electrode and Ag/AgCl as the reference electrode. Several depositions were carried out, with each deposited film having a different concentration of Sn in the metallic precursor whilst all other parameters were kept constant for all the films. Post deposition annealing was carried out in air at 250 o C for an hour. A variety of techniques were used to characterize the films. Results showed that the increase in Sn concentration did not modify the structure and preferred orientation of the films. However, it caused a slight increase in the average grain size of the films and electrical conductivity. All the films showed direct transition with the optical band gap reducing with increasing Sn concentration. The refractive index of the films showed anomalous dispersion behaviour within the UV region, and normal dispersion in the visible and infrared regions, whilst following an increasing trend with the grain size. SEM image showed spherically shaped grains of different sizes distributed randomly with good coverage across the entire area of the substrate. The EDAX spectrum was consistent with formation of the ternary PbSnS compound on ITO-coated glass substrate. Overall results indicate that, the optical and electrical properties of the electrochemically deposited PbSnS thin films can be tuned to make them suitable for specific applications by varying the concentration of Sn in the metallic precursor.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45758283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-05DOI: 10.15251/cl.2023.207.439
Z. Liu, R. X. Wang, K. Sun, X. Ling, J. W. Sun, D. Chen
Gd2O3:Er3+@Gd2O3:Yb3+ core-shell nanofibers with cubic phase were successfully fabricated by electrospinning method. The structural, morphological properties were investigated by X-Ray diffraction, scanning electron microscopy. Under 980 nm excitation, the upconversion photoluminescence in visible light exhibits strong red emitting band with obvious splitting peaks resulted from stark splitting of energy level. The visible emissions are sensitive to temperature in the range of 303-543 K. The red emission displays quenching with elevation of temperature. The activation energy for thermal quenching is equal to 0.1408 eV. The temperature dependent multi-peaks of red emission were systematically investigated. Based on valley and peak ratio of I680.31nm/ I683.03nm in upconversion emission spectra, temperature sensing with constant absolute sensitivity was achieved. These results suggest Gd2O3:Er3+@Gd2O3:Yb3+ nanofibers are promising candidates for luminescence thermometry, which may provide their application values in both scientific research and industry.
{"title":"Upconversion red light emission and luminescence thermometry of Gd2O3:Er3+ @Gd2O3:Yb3+ core-shell nanofibers synthesized via electrospinning","authors":"Z. Liu, R. X. Wang, K. Sun, X. Ling, J. W. Sun, D. Chen","doi":"10.15251/cl.2023.207.439","DOIUrl":"https://doi.org/10.15251/cl.2023.207.439","url":null,"abstract":"Gd2O3:Er3+@Gd2O3:Yb3+ core-shell nanofibers with cubic phase were successfully fabricated by electrospinning method. The structural, morphological properties were investigated by X-Ray diffraction, scanning electron microscopy. Under 980 nm excitation, the upconversion photoluminescence in visible light exhibits strong red emitting band with obvious splitting peaks resulted from stark splitting of energy level. The visible emissions are sensitive to temperature in the range of 303-543 K. The red emission displays quenching with elevation of temperature. The activation energy for thermal quenching is equal to 0.1408 eV. The temperature dependent multi-peaks of red emission were systematically investigated. Based on valley and peak ratio of I680.31nm/ I683.03nm in upconversion emission spectra, temperature sensing with constant absolute sensitivity was achieved. These results suggest Gd2O3:Er3+@Gd2O3:Yb3+ nanofibers are promising candidates for luminescence thermometry, which may provide their application values in both scientific research and industry.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45056044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-05DOI: 10.15251/cl.2023.205.387
M. Iovu, I. Culeac, V. Verlan, O. Bordian, M. Enăchescu, A. Popescu, D. Savastru, A. Lazar
The amorphous calcogenide semiconductor As0.63S2.70Sb1.37Te0.30 was synthesized and thin films based on it were obtained. XRD and optical images investigations showed the amorphous and homogeneous nature of the samples. The optical transmission spectrum in the UV-Vis range of As0.63S2.70Sb1.37Te0.30 thin films shows good transparency in the spectral range 0.7-3.5 µm with a single absorption threshold at 2.05 eV and with refractive index in infrared 2.3. The irradiation of films with light leads to a parallel shift of the transmission spectrum to the IR range. The materials with As0.63S2.70Sb1.37Te0.30 composition have high optical transparency have high optical transparency that make they promises for applications in holographic memory devices, optical amplitude and phase recorder, optical processing units and others.
{"title":"Synthesis and optical properties of the glassy compound As0.63S2.70Sb1.37Te0.30","authors":"M. Iovu, I. Culeac, V. Verlan, O. Bordian, M. Enăchescu, A. Popescu, D. Savastru, A. Lazar","doi":"10.15251/cl.2023.205.387","DOIUrl":"https://doi.org/10.15251/cl.2023.205.387","url":null,"abstract":"The amorphous calcogenide semiconductor As0.63S2.70Sb1.37Te0.30 was synthesized and thin films based on it were obtained. XRD and optical images investigations showed the amorphous and homogeneous nature of the samples. The optical transmission spectrum in the UV-Vis range of As0.63S2.70Sb1.37Te0.30 thin films shows good transparency in the spectral range 0.7-3.5 µm with a single absorption threshold at 2.05 eV and with refractive index in infrared 2.3. The irradiation of films with light leads to a parallel shift of the transmission spectrum to the IR range. The materials with As0.63S2.70Sb1.37Te0.30 composition have high optical transparency have high optical transparency that make they promises for applications in holographic memory devices, optical amplitude and phase recorder, optical processing units and others.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45556194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-01DOI: 10.15251/cl.2023.207.477
R. H. Athab, B. H. Hussein
Zinc Telluride ZnTe alloys and thin film have been fabricated and deposited on glass substrates by thermal evaporation method which may be a suitable window layer of zinc telluride with different annealing temperatures (373 and473) K for 60 minutes in vacuum. Deposited thin films with thickness 100 nm was characteristic by using X-ray diffraction XRD to know structures, Atomic Force Microscopy (AFM) to evaluate surface topology, morphology. It was found out that the vacuum annealing improves on thin ZnTe films structure and surface morphology. Structural analysis reveals that ZnTe films have zinc blende structure of cubic phase with (111) preferred reflection and grain size is enhanced from 8.6 to 16.7 nm with annealing. Optical properties where optical bandgap energy values slightly decreased (2.3-2.2) eV as the annealing temperatures.
{"title":"Fabrication and investigation of zinc telluride thin films","authors":"R. H. Athab, B. H. Hussein","doi":"10.15251/cl.2023.207.477","DOIUrl":"https://doi.org/10.15251/cl.2023.207.477","url":null,"abstract":"Zinc Telluride ZnTe alloys and thin film have been fabricated and deposited on glass substrates by thermal evaporation method which may be a suitable window layer of zinc telluride with different annealing temperatures (373 and473) K for 60 minutes in vacuum. Deposited thin films with thickness 100 nm was characteristic by using X-ray diffraction XRD to know structures, Atomic Force Microscopy (AFM) to evaluate surface topology, morphology. It was found out that the vacuum annealing improves on thin ZnTe films structure and surface morphology. Structural analysis reveals that ZnTe films have zinc blende structure of cubic phase with (111) preferred reflection and grain size is enhanced from 8.6 to 16.7 nm with annealing. Optical properties where optical bandgap energy values slightly decreased (2.3-2.2) eV as the annealing temperatures.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42623286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-01DOI: 10.15251/cl.2023.207.487
S. Sultanbekov, O. Prikhodko, N. Almas
The optical properties of Ge2Sb2Te5 thin films were studied as a function of thickness. An increase in optical band gap with decreasing film thickness has been observed. The current– voltage characteristics measured in Ge2Sb2Te5 thin films in the current mode are studied. A decrease in switching time and threshold voltage with decreasing film thickness is established.
{"title":"Structure and electronic properties of thin Ge2Sb2Te5 films produced by DC ion-plasma spattering","authors":"S. Sultanbekov, O. Prikhodko, N. Almas","doi":"10.15251/cl.2023.207.487","DOIUrl":"https://doi.org/10.15251/cl.2023.207.487","url":null,"abstract":"The optical properties of Ge2Sb2Te5 thin films were studied as a function of thickness. An increase in optical band gap with decreasing film thickness has been observed. The current– voltage characteristics measured in Ge2Sb2Te5 thin films in the current mode are studied. A decrease in switching time and threshold voltage with decreasing film thickness is established.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45060182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-01DOI: 10.15251/cl.2023.207.459
M. Butt, S. Saleem, F. Al-Harbi, S. Atta, M. Ishfaq, F. S. Al Juman, M. Yaseen
The full potential linearized augmented plane wave (FP-LAPW) approach based on the density functional theory (DFT) is employed to know the effect of Co doping on the electronic, optical, and magnetic characteristics of BaTi1-xCoxO3 at x= 8.33%, 16.66%, 25%, and 50%. The computed spin-polarized electronic band structure (BS) and the density of states (DOS) elucidate that the BaTi1-xCoxO3 compound has a ferromagnetic semiconductor behavior at all doping concentrations. The results indicate that the magnetic moment in BaTi1-xCoxO3 is found due to the p-d hybrid orbitals of Co. Moreover, the optical features of the Co-doped BTO compound are evaluated by analyzing the refractive index, reflectivity, absorption coefficient, optical conductivity, and dielectric constant under different concentrations. The outcomes revealed that the BaTi1-xCoxO3 compound is a good candidate for spintronics and optoelectronic applications.
{"title":"Optical and magnetic characteristics of BaTi1-xCoxO3: A first-principles study","authors":"M. Butt, S. Saleem, F. Al-Harbi, S. Atta, M. Ishfaq, F. S. Al Juman, M. Yaseen","doi":"10.15251/cl.2023.207.459","DOIUrl":"https://doi.org/10.15251/cl.2023.207.459","url":null,"abstract":"The full potential linearized augmented plane wave (FP-LAPW) approach based on the density functional theory (DFT) is employed to know the effect of Co doping on the electronic, optical, and magnetic characteristics of BaTi1-xCoxO3 at x= 8.33%, 16.66%, 25%, and 50%. The computed spin-polarized electronic band structure (BS) and the density of states (DOS) elucidate that the BaTi1-xCoxO3 compound has a ferromagnetic semiconductor behavior at all doping concentrations. The results indicate that the magnetic moment in BaTi1-xCoxO3 is found due to the p-d hybrid orbitals of Co. Moreover, the optical features of the Co-doped BTO compound are evaluated by analyzing the refractive index, reflectivity, absorption coefficient, optical conductivity, and dielectric constant under different concentrations. The outcomes revealed that the BaTi1-xCoxO3 compound is a good candidate for spintronics and optoelectronic applications.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42320382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-01DOI: 10.15251/cl.2023.207.449
J. S. Mohammed, F. K. Nsaif, Y. M. Jawad, K. Jasim, A. H. Al Dulaimi
In this work, As60Cu40-xSex thin films were synthesized, and the pulsed laser deposition method was used to study the effected partial replacement of copper with selenium. The electrical characteristics and optical characteristics, as indicated by the absorbance and transmittance as a function of wavelength were calculated. Additionally, the energy gap was computed. The electrical conductivity of the DC in the various conduction zones was calculated by measuring the current and voltage as a function of temperature. Additionally, the mathematical equations are used to compute the energy constants, electron hopping distance, tail width, pre-exponential factor, and density of the energy states in variation zones (densities of the energetic extended states N(Eext), localize N(Eloc) and at the Fermi states N(Ef)). The acquired data also demonstrated that the selenium concentration obviously had an impact on the electrical conduction mechanics, energy states, and the level of randomization.
{"title":"Investigating the optical and electrical characteristics of As60Cu40-xSex thin films","authors":"J. S. Mohammed, F. K. Nsaif, Y. M. Jawad, K. Jasim, A. H. Al Dulaimi","doi":"10.15251/cl.2023.207.449","DOIUrl":"https://doi.org/10.15251/cl.2023.207.449","url":null,"abstract":"In this work, As60Cu40-xSex thin films were synthesized, and the pulsed laser deposition method was used to study the effected partial replacement of copper with selenium. The electrical characteristics and optical characteristics, as indicated by the absorbance and transmittance as a function of wavelength were calculated. Additionally, the energy gap was computed. The electrical conductivity of the DC in the various conduction zones was calculated by measuring the current and voltage as a function of temperature. Additionally, the mathematical equations are used to compute the energy constants, electron hopping distance, tail width, pre-exponential factor, and density of the energy states in variation zones (densities of the energetic extended states N(Eext), localize N(Eloc) and at the Fermi states N(Ef)). The acquired data also demonstrated that the selenium concentration obviously had an impact on the electrical conduction mechanics, energy states, and the level of randomization.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41771650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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