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IEEE Transactions on Device and Materials Reliability Information for Authors IEEE 《器件与材料可靠性》期刊为作者提供的信息
IF 2.5 3区 工程技术 Q2 Engineering Pub Date : 2024-06-20 DOI: 10.1109/TDMR.2024.3405819
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引用次数: 0
Guest Editorial TDMR IIRW Special Section 特约编辑 TDMR IIRW 特辑
IF 2.5 3区 工程技术 Q2 Engineering Pub Date : 2024-06-20 DOI: 10.1109/TDMR.2024.3407548
Charles LaRow
The IEEE International Integrated Reliability Workshop (IIRW) is a distinctive event which brings together reliability researchers, professionals, and students from around the globe to a common forum for lively discussions, wonderful technical presentations, and beautiful scenery for 4 days and nights. The event takes place every year at Fallen Leaf Lake in South Lake Tahoe, CA, USA, where attendees are housed within a secluded camp with informal meeting spaces and access to boats, trails, and many other outdoor activities. The scope of content centers around hot topics in, novel techniques for, and general knowledge on semiconductor reliability research and industry challenges. Talks on transistor and front-end-of-the-line (FEOL) reliability, bias temperature instability (BTI), hot carrier (HC), gate dielectric time-dependent dielectric breakdown (TDDB), back-end-of-the-line (BEOL) reliability, Interconnect TDDB, electro-migration (EM), circuit reliability, packaging reliability, conventional and emerging memory reliability, failure analysis (FA), wafer-level reliability (WLR), among other topic are presented. The key focus areas at IIRW 2023 were Advanced node scaling solutions (FEOL/MOL/BEOL), circuit reliability (device-circuit degradation and aging).
IEEE 国际集成可靠性研讨会(IIRW)是一项独具特色的活动,它将来自全球各地的可靠性研究人员、专业人士和学生聚集到一个共同的论坛,在四天四夜的时间里进行热烈的讨论、精彩的技术演讲和美丽的风景。活动每年都在美国加利福尼亚州南太浩湖的落叶湖举行,与会者住在一个隐蔽的营地里,那里有非正式的会议场所,还可以乘船、走小路和参加许多其他户外活动。会议内容围绕半导体可靠性研究和行业挑战的热点话题、新技术和常识展开。会议将就晶体管和线路前端 (FEOL) 可靠性、偏置温度不稳定性 (BTI)、热载流子 (HC)、栅极电介质随时间变化的电介质击穿 (TDDB)、线路后端 (BEOL) 可靠性、互连 TDDB、电迁移 (EM)、电路可靠性、封装可靠性、传统和新兴存储器可靠性、故障分析 (FA)、晶圆级可靠性 (WLR) 等主题进行讨论。IIRW 2023 的重点领域是先进节点扩展解决方案(FEOL/MOL/BEOL)、电路可靠性(器件-电路退化和老化)。
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引用次数: 0
IEEE Transactions on Device and Materials Reliability Publication Information IEEE 器件与材料可靠性期刊》出版信息
IF 2.5 3区 工程技术 Q2 Engineering Pub Date : 2024-06-20 DOI: 10.1109/TDMR.2024.3405818
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引用次数: 0
IEEE Transactions on Sustainable Energy Publication Information 电气和电子工程师学会《可持续能源期刊》出版信息
IF 8.6 1区 工程技术 Pub Date : 2024-06-20 DOI: 10.1109/TSTE.2024.3410716
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引用次数: 0
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers 半导体制造设计 (DFM) 特刊 联合征稿
IF 2.5 3区 工程技术 Q2 Engineering Pub Date : 2024-06-20 DOI: 10.1109/TDMR.2024.3412348
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引用次数: 0
IEEE Journal of Photovoltaics Information for Authors IEEE 光伏学报》作者信息
IF 2.5 3区 工程技术 Q1 Physics and Astronomy Pub Date : 2024-06-20 DOI: 10.1109/JPHOTOV.2024.3412475
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引用次数: 0
IEEE Transactions on Sustainable Energy Information for Authors IEEE 可持续能源期刊 作者信息
IF 8.6 1区 工程技术 Pub Date : 2024-06-20 DOI: 10.1109/TSTE.2024.3410726
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引用次数: 0
Call for Papers: Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices 征稿:电气和电子工程师学会电子器件学报》智能传感器系统特刊
IF 2.5 3区 工程技术 Q1 Physics and Astronomy Pub Date : 2024-06-20 DOI: 10.1109/JPHOTOV.2024.3412813
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引用次数: 0
IEEE Industry Applications Society Information IEEE 工业应用协会信息
IF 8.6 1区 工程技术 Pub Date : 2024-06-20 DOI: 10.1109/TSTE.2024.3410724
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引用次数: 0
Get Published in the New IEEE Open Access Journal of Power and Energy 在新的 IEEE 开放获取期刊《电力与能源》上发表文章
IF 8.6 1区 工程技术 Pub Date : 2024-06-20 DOI: 10.1109/TSTE.2024.3410718
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引用次数: 0
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