Pub Date : 2025-03-19DOI: 10.1109/TDMR.2025.3551112
{"title":"Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications","authors":"","doi":"10.1109/TDMR.2025.3551112","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3551112","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"177-178"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934109","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143654925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-19DOI: 10.1109/TDMR.2025.3551111
{"title":"Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/TDMR.2025.3551111","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3551111","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"175-176"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934110","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143655005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, the particle filtering problem is investigated for nonlinear systems with correlated noise and missing measurements (MMs). By accounting for both correlated noise and MMs, a novel explicit weighting expression is presented. Based on this weighting scheme, a new bootstrap particle filtering algorithm is designed to address such influence. Furthermore, to limit the particle degradation suffered by the bootstrap particle filter (PF), a novel importance function based on the Gaussian optimal filter is presented. To perform the numerical integration required by the Gaussian optimal filter, the fifth-degree spherical-radial cubature rule (FSRCR) is used to acquire a novel importance function. Consequently, a novel high-degree cubature particle filtering algorithm is developed for these systems. Simulation experiments show that the two proposed algorithms significantly improve estimation accuracy, with notable performance gains over the existing unscented Kalman filter (KF), especially as the sample size increases.
{"title":"Bootstrap and High-Degree Cubature Particle Filters for Nonlinear Systems With Correlated Noise and Missing Measurements","authors":"Xing Zhang;Zhenrong Yang;Xiaohui Lin;Wenqian Xiang","doi":"10.1109/JSEN.2025.3548637","DOIUrl":"https://doi.org/10.1109/JSEN.2025.3548637","url":null,"abstract":"In this article, the particle filtering problem is investigated for nonlinear systems with correlated noise and missing measurements (MMs). By accounting for both correlated noise and MMs, a novel explicit weighting expression is presented. Based on this weighting scheme, a new bootstrap particle filtering algorithm is designed to address such influence. Furthermore, to limit the particle degradation suffered by the bootstrap particle filter (PF), a novel importance function based on the Gaussian optimal filter is presented. To perform the numerical integration required by the Gaussian optimal filter, the fifth-degree spherical-radial cubature rule (FSRCR) is used to acquire a novel importance function. Consequently, a novel high-degree cubature particle filtering algorithm is developed for these systems. Simulation experiments show that the two proposed algorithms significantly improve estimation accuracy, with notable performance gains over the existing unscented Kalman filter (KF), especially as the sample size increases.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 8","pages":"13219-13231"},"PeriodicalIF":4.3,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-18DOI: 10.1109/TPS.2025.3540916
Zuyu Wang;Hongcheng Yin;Ling Guan;Xunwang Dang;Haochuan Deng;Zhenpei Tan
During hypersonic spacecraft flights, it is easy to produce metal particles containing aluminum (Al) or form a plasma sheath containing an Al metal layer to attach to the surface of the spacecraft, which leads to the interruption of radio communication. In this article, Using the Bhatnagar–Gross–Krook (BGK) collision model, this study calculates the transmission coefficient of electromagnetic (EM) waves in the inhomogeneous medium comprising fully ionized dusty plasma and Al layers through the scattering matrix method (SMM). The transport characteristics of left-circularly polarized and right-circularly polarized waves in inhomogeneous fully ionized dusty plasma containing an Al layer are analyzed in the presence of an external magnetic field. The effects of magnetic field intensity, Al layer thickness, and other dusty plasma parameters (dust particle density, dust particle radius, electron density, and effective collision frequency) on the propagation characteristics of EM waves in fully ionized dusty plasma and inhomogeneous media of Al are analyzed in the GHz band. The findings reveal that aluminum significantly impedes EM wave propagation, with increased Al layer thickness exacerbating the obstruction of EM waves penetrating the fully ionized dusty plasma. In addition, magnetic field intensity and different dusty plasma parameters also affect the propagation characteristics of EM waves in the fully ionized dusty plasma containing Al to different degrees. These results provide a theoretical basis for alleviating the blackouts problem of hypersonic spacecraft during flight.
{"title":"Analysis of Electromagnetic Wave Propagation Characteristics in Dusty Plasma Containing Aluminum Metal Layer by Using BGK Model","authors":"Zuyu Wang;Hongcheng Yin;Ling Guan;Xunwang Dang;Haochuan Deng;Zhenpei Tan","doi":"10.1109/TPS.2025.3540916","DOIUrl":"https://doi.org/10.1109/TPS.2025.3540916","url":null,"abstract":"During hypersonic spacecraft flights, it is easy to produce metal particles containing aluminum (Al) or form a plasma sheath containing an Al metal layer to attach to the surface of the spacecraft, which leads to the interruption of radio communication. In this article, Using the Bhatnagar–Gross–Krook (BGK) collision model, this study calculates the transmission coefficient of electromagnetic (EM) waves in the inhomogeneous medium comprising fully ionized dusty plasma and Al layers through the scattering matrix method (SMM). The transport characteristics of left-circularly polarized and right-circularly polarized waves in inhomogeneous fully ionized dusty plasma containing an Al layer are analyzed in the presence of an external magnetic field. The effects of magnetic field intensity, Al layer thickness, and other dusty plasma parameters (dust particle density, dust particle radius, electron density, and effective collision frequency) on the propagation characteristics of EM waves in fully ionized dusty plasma and inhomogeneous media of Al are analyzed in the GHz band. The findings reveal that aluminum significantly impedes EM wave propagation, with increased Al layer thickness exacerbating the obstruction of EM waves penetrating the fully ionized dusty plasma. In addition, magnetic field intensity and different dusty plasma parameters also affect the propagation characteristics of EM waves in the fully ionized dusty plasma containing Al to different degrees. These results provide a theoretical basis for alleviating the blackouts problem of hypersonic spacecraft during flight.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 4","pages":"806-812"},"PeriodicalIF":1.3,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143830532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Among the various Backside Interconnections (BSI) methods, Direct Backside Contact (DBC) is essential in minimizing the area of logic standard cells and SRAM bitcells with 3-dimensional Stacked FETs (3DSFET) beyond the 1 nm node. Additionally, from an SRAM design perspective, the DBC structure offers the advantage of allowing the use of NMOS for the Pass-Gate (PG) transistor, as was done previously. In this study, we demonstrated SRAM transistors operation by adopting the highly promising 3DSFET with DBC structure. And we validated the SRAM bitcell operation through TCAD simulation by applying hardware verification of the SRAM transistor. As a result, we can propose an innovative structure that is compatible with both logic transistor performance and SRAM bitcell configuration beyond 1 nm node.
{"title":"Development of SRAM in 3-Dimensional Stacked FET With Direct Backside Contact Beyond 1Nm Node","authors":"Mingyu Kim;Ilho Myeong;Jaehyun Park;Sungil Park;Deukho Yeon;Daewon Ha;Hyungcheol Shin","doi":"10.1109/TNANO.2025.3552308","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3552308","url":null,"abstract":"Among the various Backside Interconnections (BSI) methods, Direct Backside Contact (DBC) is essential in minimizing the area of logic standard cells and SRAM bitcells with 3-dimensional Stacked FETs (3DSFET) beyond the 1 nm node. Additionally, from an SRAM design perspective, the DBC structure offers the advantage of allowing the use of NMOS for the Pass-Gate (PG) transistor, as was done previously. In this study, we demonstrated SRAM transistors operation by adopting the highly promising 3DSFET with DBC structure. And we validated the SRAM bitcell operation through TCAD simulation by applying hardware verification of the SRAM transistor. As a result, we can propose an innovative structure that is compatible with both logic transistor performance and SRAM bitcell configuration beyond 1 nm node.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"201-204"},"PeriodicalIF":2.1,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143808878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-18DOI: 10.1109/TPS.2025.3544352
Edl Schamiloglu
{"title":"Editorial Announcing 2024 TPS Best Paper Award","authors":"Edl Schamiloglu","doi":"10.1109/TPS.2025.3544352","DOIUrl":"https://doi.org/10.1109/TPS.2025.3544352","url":null,"abstract":"","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 3","pages":"362-363"},"PeriodicalIF":1.3,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10931864","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-18DOI: 10.1109/TNANO.2025.3552525
Himanshu R. Das;Haraprasad Mondal;Rajeev Kumar
Plasmonic based electro-absorption modulators (EAMs) has paved the way for high-speed photonic integrated circuits (PICs). This paper demonstrates the numerical analysis and the structural design of the EAM using various plasmonic materials, such as vanadium dioxide (VO2), indium-tin-oxide (ITO) and graphene, to modulate signals traveling through the waveguide on an SiO2 platform. It also explores key performance metrics, including the extinction ratio (ER) and the figure-of-merit (FOM), which is related to the device's insertion loss (IL). By optimizing the structural parameters and utilizing the plasmonic materials, the device characteristics, especially the effective-mode-index (EMI), is modified to attain the epsilon-near-zero (ENZ) condition. The ITO-based EAM attains a high ER of 22.24 dB/μm with a FOM of 482.45, while the graphene-ITO based EAM obtains an ER of 20.31 dB/μm and a FOM of 296.06 at 1.55 μm wavelength. Both devices have an energy consumption per bit (Ebit) below 2.20 fJ/bit and modulation frequency ($f$) exceeding 1300 GHz at an IL $< $ 0.07 dB/μm. The investigated EAMs hold potential for future-generation PICs.
{"title":"Realization of Compact High-Performance EAM Based on Numerical Analysis of ITO, VO2 and Graphene on SiO2 Platform","authors":"Himanshu R. Das;Haraprasad Mondal;Rajeev Kumar","doi":"10.1109/TNANO.2025.3552525","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3552525","url":null,"abstract":"Plasmonic based electro-absorption modulators (EAMs) has paved the way for high-speed photonic integrated circuits (PICs). This paper demonstrates the numerical analysis and the structural design of the EAM using various plasmonic materials, such as vanadium dioxide (VO<sub>2</sub>), indium-tin-oxide (ITO) and graphene, to modulate signals traveling through the waveguide on an SiO<sub>2</sub> platform. It also explores key performance metrics, including the extinction ratio (ER) and the figure-of-merit (FOM), which is related to the device's insertion loss (IL). By optimizing the structural parameters and utilizing the plasmonic materials, the device characteristics, especially the effective-mode-index (EMI), is modified to attain the epsilon-near-zero (ENZ) condition. The ITO-based EAM attains a high ER of 22.24 dB/μm with a FOM of 482.45, while the graphene-ITO based EAM obtains an ER of 20.31 dB/μm and a FOM of 296.06 at 1.55 μm wavelength. Both devices have an energy consumption per bit (E<sub>bit</sub>) below 2.20 fJ/bit and modulation frequency (<inline-formula><tex-math>$f$</tex-math></inline-formula>) exceeding 1300 GHz at an IL <inline-formula><tex-math>$< $</tex-math></inline-formula> 0.07 dB/μm. The investigated EAMs hold potential for future-generation PICs.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"178-188"},"PeriodicalIF":2.1,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143792868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-18DOI: 10.1109/TNANO.2025.3552433
Yijun Cui;Jiang Li;Chongyan Gu;Chenghua Wang;Weiqiang Liu
Resistive random access memory (RRAM) presents a promising solution for energy-efficient logic-in-memory (LiM) systems. This paper introduces a Multi-mode Configurable Physical Unclonable Function (MC-PUF) tailored for secure RRAM-based LiM applications, utilizing a conventional one-transistor-one-RRAM (1T1R) array. The MC-PUF operates in multiple modes by modifying the programming voltages of the RRAM, which captures the distinct variations of each RRAM under varying conditions. In weak write mode, the MC-PUF exploits the inherent variations of RRAM by setting the programming voltages to achieve a 50% switching probability, thereby randomly assigning ‘0’ or ‘1’ states. In parallel competition mode, it generates responses by selecting two parallel RRAMs, with one remaining in a high resistance state (HRS) and the other switching to a low resistance state (LRS). This configuration allows the MC-PUF to generate more challenge-response pairs (CRPs) compared to conventional designs, thus enhancing security through increased entropy. The design was validated through simulations using a compact Spice model and the UMC 55 nm CMOS library, as well as on an experimental hardware platform with commercial RRAM chips. Results from both simulations and hardware implementations indicate that the proposed MC-PUF exhibits high reliability, excellent uniqueness, and superior configurability.
{"title":"A Multi-Mode Configurable Physical Unclonable Function Based on RRAM With Adjustable Programmable Voltage","authors":"Yijun Cui;Jiang Li;Chongyan Gu;Chenghua Wang;Weiqiang Liu","doi":"10.1109/TNANO.2025.3552433","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3552433","url":null,"abstract":"Resistive random access memory (RRAM) presents a promising solution for energy-efficient logic-in-memory (LiM) systems. This paper introduces a Multi-mode Configurable Physical Unclonable Function (MC-PUF) tailored for secure RRAM-based LiM applications, utilizing a conventional one-transistor-one-RRAM (1T1R) array. The MC-PUF operates in multiple modes by modifying the programming voltages of the RRAM, which captures the distinct variations of each RRAM under varying conditions. In weak write mode, the MC-PUF exploits the inherent variations of RRAM by setting the programming voltages to achieve a 50% switching probability, thereby randomly assigning ‘0’ or ‘1’ states. In parallel competition mode, it generates responses by selecting two parallel RRAMs, with one remaining in a high resistance state (HRS) and the other switching to a low resistance state (LRS). This configuration allows the MC-PUF to generate more challenge-response pairs (CRPs) compared to conventional designs, thus enhancing security through increased entropy. The design was validated through simulations using a compact Spice model and the UMC 55 nm CMOS library, as well as on an experimental hardware platform with commercial RRAM chips. Results from both simulations and hardware implementations indicate that the proposed MC-PUF exhibits high reliability, excellent uniqueness, and superior configurability.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"166-177"},"PeriodicalIF":2.1,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143769549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-18DOI: 10.1109/TPS.2025.3547679
{"title":"Announcing the Twentieth Special Issue of IEEE Transactions on Plasma Science on High-Power Microwave Generation, June 2026","authors":"","doi":"10.1109/TPS.2025.3547679","DOIUrl":"https://doi.org/10.1109/TPS.2025.3547679","url":null,"abstract":"","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 3","pages":"476-476"},"PeriodicalIF":1.3,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10932649","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：