Pub Date : 2025-04-14DOI: 10.1109/TPS.2025.3558387
{"title":"Member ad suite","authors":"","doi":"10.1109/TPS.2025.3558387","DOIUrl":"https://doi.org/10.1109/TPS.2025.3558387","url":null,"abstract":"","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 4","pages":"587-587"},"PeriodicalIF":1.3,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10964509","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143830578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-14DOI: 10.1109/TPS.2025.3559396
{"title":"Announcing the Twentieth Special Issue of IEEE Transactions on Plasma Science on High-Power Microwave Generation, June 2026","authors":"","doi":"10.1109/TPS.2025.3559396","DOIUrl":"https://doi.org/10.1109/TPS.2025.3559396","url":null,"abstract":"","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 4","pages":"588-588"},"PeriodicalIF":1.3,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10964505","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143830579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-14DOI: 10.1109/TPS.2025.3556321
{"title":"Announcing the Twentieth Special Issue of IEEE Transactions on Plasma Science on High-Power Microwave Generation, June 2026","authors":"","doi":"10.1109/TPS.2025.3556321","DOIUrl":"https://doi.org/10.1109/TPS.2025.3556321","url":null,"abstract":"","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 4","pages":"848-848"},"PeriodicalIF":1.3,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10964503","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143830521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-07DOI: 10.1109/JPHOTOV.2025.3554315
Takaya Sugiura;Yuta Watanabe
This study explores strategies for safeguarding complementary metal–oxide–semiconductor (CMOS) field-effect-transistors (FETs) and PN-diode against bulk carrier contamination for energy harvesting applications. Energy harvesting processes can generate excessive carriers within the bulk region, which can penetrate the PMOS region from the p(P-Sub)/n(NWell) junction or nmosfet without triple-well. To address this problem, this study investigated the effectiveness of a guard ring structure in protecting cmosfets and PN-diode by recombining carriers in their vicinities. The formation of unpassivated metals around cmosfets serves as a catalyst for carrier elimination before they penetrate the NWell region of a pmosfet or the nmosfet itself, thereby improving the off states of both FETs. For a PN diode, the smaller off-current and lower threshold voltage obtained are advantageous for low-power consumption. However, such guard ring also degrades the performance of a photovoltaic (PV) cell by recombining the carriers needed by the cell to generate power. The experimental study of PV cells w/back-surface-field (BSF) and w/o BSF revealed that the former reduced the $V_{text{OC}}$ of the cell with and that caution is required when forming a guard ring nearby the PV cell.
{"title":"Guard Ring Designs on Photovoltaic Energy Harvesting Silicon LSIs","authors":"Takaya Sugiura;Yuta Watanabe","doi":"10.1109/JPHOTOV.2025.3554315","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3554315","url":null,"abstract":"This study explores strategies for safeguarding complementary metal–oxide–semiconductor (CMOS) field-effect-transistors (FETs) and PN-diode against bulk carrier contamination for energy harvesting applications. Energy harvesting processes can generate excessive carriers within the bulk region, which can penetrate the PMOS region from the p(P-Sub)/n(NWell) junction or <sc>nmosfet</small> without triple-well. To address this problem, this study investigated the effectiveness of a guard ring structure in protecting <sc>cmosfet</small>s and PN-diode by recombining carriers in their vicinities. The formation of unpassivated metals around <sc>cmosfet</small>s serves as a catalyst for carrier elimination before they penetrate the NWell region of a <sc>pmosfet</small> or the <sc>nmosfet</small> itself, thereby improving the <sc>off</small> states of both FETs. For a PN diode, the smaller off-current and lower threshold voltage obtained are advantageous for low-power consumption. However, such guard ring also degrades the performance of a photovoltaic (PV) cell by recombining the carriers needed by the cell to generate power. The experimental study of PV cells w/back-surface-field (BSF) and w/o BSF revealed that the former reduced the <inline-formula><tex-math>$V_{text{OC}}$</tex-math></inline-formula> of the cell with and that caution is required when forming a guard ring nearby the PV cell.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"420-426"},"PeriodicalIF":2.5,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-07DOI: 10.1109/JPHOTOV.2025.3554338
Kevin S. Anderson;Clifford W. Hansen;Marios Theristis
Photovoltaic performance modeling accuracy depends heavily on the quality of the input parameters. When relying on generic PAN files and datasheets, the input parameters often fail to accurately capture the behavior of every module with the same model number. Therefore, there is a need for methods to generate more accurate input data. In this study, we present a method for determining parameter values for the PVsyst version 6 photovoltaic module performance model from performance test measurements following the IEC 61853-1:2011 standard. The method is intentionally noniterative to facilitate implementation and reproducibility. We apply the method to datasets from 15 modules of various photovoltaic technologies (SHJ, TOPCon, IBC, PERC, n-PERT, Al-BSF, and CdTe), reproducing the original maximum power measurements with root-mean-squared (RMS) accuracy within 0.5% in all cases. The method's accuracy is compared to that of two iterative methods.
{"title":"A Noniterative Method of Estimating Parameter Values for the PVsyst Version 6 Single-Diode Model From IEC 61853-1 Matrix Measurements","authors":"Kevin S. Anderson;Clifford W. Hansen;Marios Theristis","doi":"10.1109/JPHOTOV.2025.3554338","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3554338","url":null,"abstract":"Photovoltaic performance modeling accuracy depends heavily on the quality of the input parameters. When relying on generic PAN files and datasheets, the input parameters often fail to accurately capture the behavior of every module with the same model number. Therefore, there is a need for methods to generate more accurate input data. In this study, we present a method for determining parameter values for the PVsyst version 6 photovoltaic module performance model from performance test measurements following the IEC 61853-1:2011 standard. The method is intentionally noniterative to facilitate implementation and reproducibility. We apply the method to datasets from 15 modules of various photovoltaic technologies (SHJ, TOPCon, IBC, PERC, n-PERT, Al-BSF, and CdTe), reproducing the original maximum power measurements with root-mean-squared (RMS) accuracy within 0.5% in all cases. The method's accuracy is compared to that of two iterative methods.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"492-499"},"PeriodicalIF":2.5,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10955246","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-04DOI: 10.1109/TPS.2025.3553744
A. Gurinovich
Development of high-power pulsed radiation sources in any frequency range requires both generation of high power to drive the source and increasing the efficiency of supplied power to radiated electromagnetic field conversion. The former implies the generation of high power (that is equal to high voltage and high current) pulses. The latter means the use of an electron beam moving in a vacuum to produce the intense radiation: high-electron beam current or high-current density combined with a large cross section of interaction area are required. Explosive pulsed power could contribute to both of the above being capable to store and deliver much higher specific energy as compared with either dielectrics or magnetics and providing high flexibility for matching with a load by the use of a pulse-forming network. Piecemeal matching of explosively driven power supply with the high-power microwave (HPM) producing load (vacuum tube) is described.
{"title":"Explosive Pulsed Power to Drive a Vacuum Tube","authors":"A. Gurinovich","doi":"10.1109/TPS.2025.3553744","DOIUrl":"https://doi.org/10.1109/TPS.2025.3553744","url":null,"abstract":"Development of high-power pulsed radiation sources in any frequency range requires both generation of high power to drive the source and increasing the efficiency of supplied power to radiated electromagnetic field conversion. The former implies the generation of high power (that is equal to high voltage and high current) pulses. The latter means the use of an electron beam moving in a vacuum to produce the intense radiation: high-electron beam current or high-current density combined with a large cross section of interaction area are required. Explosive pulsed power could contribute to both of the above being capable to store and deliver much higher specific energy as compared with either dielectrics or magnetics and providing high flexibility for matching with a load by the use of a pulse-forming network. Piecemeal matching of explosively driven power supply with the high-power microwave (HPM) producing load (vacuum tube) is described.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 4","pages":"579-585"},"PeriodicalIF":1.3,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143830576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-03DOI: 10.1109/JSEN.2025.3534229
Meng Yang;Ruotong Zhu;Wenyong Jin;Yongsheng Wang
Because of varying ecological factors such as climate, soil, temperature, and precipitation, the quality of mung beans from different origins exhibits significant differences. A fast and effective method for identifying the origin of mung beans is essential for protecting origin-specific products and safeguarding consumer rights. In this work, an electronic nose (e-nose) combined with a deep learning algorithm is proposed to identify the gas information of mung beans from different origins. First, gas information of mung beans in six renowned origins of China is detected using an e-nose system. Next, based on the time-series characteristics and cross-sensitivity in gas information, a deep feature computing module (DFCM) is proposed to adaptively compute the deep gas features along both the time and sensor directions. Finally, a deep feature computing and classification network (DFCC-Net) is designed to identify the gas information of mung beans at different origins. Through visual analysis of the gas information, ablation studies, and comparison with state-of-the-art gas classification methods, DFCC-Net demonstrates superior performance, achieving an accuracy of 97.93%, a precision of 98.09%, and a recall of 98.09%. Meanwhile, the gradient-weighted class activation mapping (Grad-CAM) visualization method is employed to highlight key gas features, further validating the effectiveness of feature computation and classification by DFCC-Net. In conclusion, the integration of the e-nose system with DFCC-Net offers an effective approach for accurately identifying the origin of mung beans and protecting origin-specific products.
{"title":"An Electronic Nose Combined With DFCC-Net for Origin Identification of Mung Beans","authors":"Meng Yang;Ruotong Zhu;Wenyong Jin;Yongsheng Wang","doi":"10.1109/JSEN.2025.3534229","DOIUrl":"https://doi.org/10.1109/JSEN.2025.3534229","url":null,"abstract":"Because of varying ecological factors such as climate, soil, temperature, and precipitation, the quality of mung beans from different origins exhibits significant differences. A fast and effective method for identifying the origin of mung beans is essential for protecting origin-specific products and safeguarding consumer rights. In this work, an electronic nose (e-nose) combined with a deep learning algorithm is proposed to identify the gas information of mung beans from different origins. First, gas information of mung beans in six renowned origins of China is detected using an e-nose system. Next, based on the time-series characteristics and cross-sensitivity in gas information, a deep feature computing module (DFCM) is proposed to adaptively compute the deep gas features along both the time and sensor directions. Finally, a deep feature computing and classification network (DFCC-Net) is designed to identify the gas information of mung beans at different origins. Through visual analysis of the gas information, ablation studies, and comparison with state-of-the-art gas classification methods, DFCC-Net demonstrates superior performance, achieving an accuracy of 97.93%, a precision of 98.09%, and a recall of 98.09%. Meanwhile, the gradient-weighted class activation mapping (Grad-CAM) visualization method is employed to highlight key gas features, further validating the effectiveness of feature computation and classification by DFCC-Net. In conclusion, the integration of the e-nose system with DFCC-Net offers an effective approach for accurately identifying the origin of mung beans and protecting origin-specific products.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 8","pages":"14173-14182"},"PeriodicalIF":4.3,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143839815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-02DOI: 10.1109/JPHOTOV.2025.3551499
Amir Al-Ahmed;Mohammad Afzaal;Firoz Khan;Muhammed P. U. Haris
Despite the unprecedented certified efficiency of lead-based perovskite solar cells, their incorporation of potentially hazardous lead presents a considerable disadvantage, limiting their commercial feasibility. Halide double perovskites (DPVTs) have emerged as viable alternatives to lead-based perovskites. Nonetheless, obstacles such as inadequate solubility with traditional precursor solvents, an elevated indirect optical bandgap, and heterogeneous structural distributions have been recognized as impediments to their utilization in solar devices. Out of numerous compositions of DPVTs documented in the literature, only a limited number of structures have been effectively incorporated into solar cell systems. Furthermore, there is huge divergence between simulated and actual solar cell efficiencies. Comprehending the essential optoelectronic features and their underlying mechanisms is vital for formulating mitigating methods. This review examines possible DPVTs exhibiting favorable optoelectronic characteristics and photovoltaic metrics. We identify existing problems and innovative mitigation strategies regarding the robustness of DPVT structures, their optoelectronic properties, the simulation of photovoltaic performance, and the laboratory fabrication of DPVTs, while also providing insights into future prospects.
{"title":"Double-Perovskite Materials: Possibilities and Reality for a Better Solar Cell Device","authors":"Amir Al-Ahmed;Mohammad Afzaal;Firoz Khan;Muhammed P. U. Haris","doi":"10.1109/JPHOTOV.2025.3551499","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3551499","url":null,"abstract":"Despite the unprecedented certified efficiency of lead-based perovskite solar cells, their incorporation of potentially hazardous lead presents a considerable disadvantage, limiting their commercial feasibility. Halide double perovskites (DPVTs) have emerged as viable alternatives to lead-based perovskites. Nonetheless, obstacles such as inadequate solubility with traditional precursor solvents, an elevated indirect optical bandgap, and heterogeneous structural distributions have been recognized as impediments to their utilization in solar devices. Out of numerous compositions of DPVTs documented in the literature, only a limited number of structures have been effectively incorporated into solar cell systems. Furthermore, there is huge divergence between simulated and actual solar cell efficiencies. Comprehending the essential optoelectronic features and their underlying mechanisms is vital for formulating mitigating methods. This review examines possible DPVTs exhibiting favorable optoelectronic characteristics and photovoltaic metrics. We identify existing problems and innovative mitigation strategies regarding the robustness of DPVT structures, their optoelectronic properties, the simulation of photovoltaic performance, and the laboratory fabrication of DPVTs, while also providing insights into future prospects.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"380-392"},"PeriodicalIF":2.5,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-02DOI: 10.1109/TNANO.2025.3556856
E. Miranda;E. Piros;F. L. Aguirre;T. Kim;P. Schreyer;J. Gehrunger;T. Schwarz;T. Oster;K. Hofmann;J. Suñé;C. Hochberger;L. Alff
We investigate in this letter the role the voltage ramp rate plays in the conduction and programming characteristics of bipolar-type memristive devices. It is shown that speeding up the writing or erasing process of a memristor is beneficial in terms of energy consumption but has a side cost associated with power dissipation. This happens because of the dynamical aspects of the set and reset transitions which are ultimately dictated by the physics of metal ions and oxygen vacancies migration. It is shown that by adding a constant base voltage to the voltage sweep, shorter programming times can be achieved but no significant impact on the power dissipation-energy consumption relationship is observed. Modeling and simulations are carried out with the aid of the Dynamic Memdiode Model and its implementation in LTspice using the Method of Elementary Solvers. Since the device model parameters and simulation conditions can vary in a wide range, the complete schematics are provided so that the interested readers can test different casuistries by themselves.
{"title":"Analysis of the Voltage Ramp Rate Effects on the Programming Characteristics of Bipolar-Type Memristive Devices","authors":"E. Miranda;E. Piros;F. L. Aguirre;T. Kim;P. Schreyer;J. Gehrunger;T. Schwarz;T. Oster;K. Hofmann;J. Suñé;C. Hochberger;L. Alff","doi":"10.1109/TNANO.2025.3556856","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3556856","url":null,"abstract":"We investigate in this letter the role the voltage ramp rate plays in the conduction and programming characteristics of bipolar-type memristive devices. It is shown that speeding up the writing or erasing process of a memristor is beneficial in terms of energy consumption but has a side cost associated with power dissipation. This happens because of the dynamical aspects of the set and reset transitions which are ultimately dictated by the physics of metal ions and oxygen vacancies migration. It is shown that by adding a constant base voltage to the voltage sweep, shorter programming times can be achieved but no significant impact on the power dissipation-energy consumption relationship is observed. Modeling and simulations are carried out with the aid of the Dynamic Memdiode Model and its implementation in LTspice using the Method of Elementary Solvers. Since the device model parameters and simulation conditions can vary in a wide range, the complete schematics are provided so that the interested readers can test different casuistries by themselves.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"205-208"},"PeriodicalIF":2.1,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10947287","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143845471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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