Gen Long, Peiheng Jiang, Zishu Zhou, Meizhen Huang, Binglan Wu, Zhicheng Zhong, Sunan Ding, Ning Wang, Guangyu Zhang
Tunneling techniques are pivotal for probing 2D magnetic materials. While the Fowler-Nordheim model describes tunneling in bulk materials through bias-induced triangular potentials, van der Waals layered systems require special consideration of interlayer gaps. The fundamental mechanisms of tunneling processes in van der Waals magnetic materials are delved into, with a specific emphasis on CrBr3. Layer-resolved quasi-resonant tunneling (QRT) mediated by ladder-shaped barriers is revealed. QRT occurs because the outermost CrBr3 conduction band aligns with the Fermi level of the tunneling electrode under the bias voltage tilting, resulting in an increased tunneling probability and enhanced current. Two competing mechanisms driven by the magnetic field—the suppression of spin fluctuations leading to negative tunneling magnetoresistance (TMR) and the spin-flip-induced elevation of the conduction band energy causing positive TMR—are identified to explain the diverse behaviors of tunneling magnetoresistance under different bias voltages and temperatures. The work establishes van der Waals heterostructures as distinct tunneling systems differing fundamentally from conventional bulk barriers, while introducing the QRT concept as a critical advancement in understanding electronic tunneling in layered materials.
{"title":"Quasi-Resonant Tunneling Transport in Magnetic CrBr3","authors":"Gen Long, Peiheng Jiang, Zishu Zhou, Meizhen Huang, Binglan Wu, Zhicheng Zhong, Sunan Ding, Ning Wang, Guangyu Zhang","doi":"10.1002/apxr.202400177","DOIUrl":"10.1002/apxr.202400177","url":null,"abstract":"<p>Tunneling techniques are pivotal for probing 2D magnetic materials. While the Fowler-Nordheim model describes tunneling in bulk materials through bias-induced triangular potentials, van der Waals layered systems require special consideration of interlayer gaps. The fundamental mechanisms of tunneling processes in van der Waals magnetic materials are delved into, with a specific emphasis on CrBr<sub>3</sub>. Layer-resolved quasi-resonant tunneling (QRT) mediated by ladder-shaped barriers is revealed. QRT occurs because the outermost CrBr3 conduction band aligns with the Fermi level of the tunneling electrode under the bias voltage tilting, resulting in an increased tunneling probability and enhanced current. Two competing mechanisms driven by the magnetic field—the suppression of spin fluctuations leading to negative tunneling magnetoresistance (TMR) and the spin-flip-induced elevation of the conduction band energy causing positive TMR—are identified to explain the diverse behaviors of tunneling magnetoresistance under different bias voltages and temperatures. The work establishes van der Waals heterostructures as distinct tunneling systems differing fundamentally from conventional bulk barriers, while introducing the QRT concept as a critical advancement in understanding electronic tunneling in layered materials.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400177","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144273548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Takeshi Nakagawa, Melita Menelaou, Martina Vrankić
Two-dimensional (2D) ferroelectrics, especially lead-free materials such as barium titanate, BaTiO3, hold significant promise for advanced electronics due to their unique nanoscale properties. Doping BaTiO3 with lanthanides (Ln) can enable fine-tuning of electrical and dielectric properties by substituting Ba2⁺ (A-site) or Ti⁴⁺ (B-site) in the perovskite structure. A-site doping enhances dielectric properties, while doping the B-site changes the polarization and thermal stability. The site preference depends on the ionic radii and charge compensation mechanisms, which include oxygen vacancies and self-compensation processes. This research delivers the structural and microstructural aspects of BaTiO3 doped with members of the Ln family from La to Lu, emphasizing their superior properties compared to undoped BaTiO3. Notably, the Ln dopants significantly influence the ferroelectric, ferromagnetic, luminescent, and piezocatalytic properties, where the ionic radius, doping mechanisms, defect formation, and preparation methods play a role. Theoretical studies and advanced characterization data indicate that Ln dopants improve the performance of BaTiO3 by stabilizing structural defects, affecting site occupancy, and improving insulation resistance. Understanding the defect chemistry and Ln ion distribution in Ln-doped BaTiO3 systems can help optimize their functional properties for next-generation technologies and sustainable energy applications.
{"title":"Showcasing the Structure and Properties of Lanthanide-Doped BaTiO3","authors":"Takeshi Nakagawa, Melita Menelaou, Martina Vrankić","doi":"10.1002/apxr.202500006","DOIUrl":"10.1002/apxr.202500006","url":null,"abstract":"<p>Two-dimensional (2D) ferroelectrics, especially lead-free materials such as barium titanate, BaTiO<sub>3</sub>, hold significant promise for advanced electronics due to their unique nanoscale properties. Doping BaTiO<sub>3</sub> with lanthanides (Ln) can enable fine-tuning of electrical and dielectric properties by substituting Ba<sup>2</sup>⁺ (A-site) or Ti⁴⁺ (B-site) in the perovskite structure. A-site doping enhances dielectric properties, while doping the B-site changes the polarization and thermal stability. The site preference depends on the ionic radii and charge compensation mechanisms, which include oxygen vacancies and self-compensation processes. This research delivers the structural and microstructural aspects of BaTiO<sub>3</sub> doped with members of the Ln family from La to Lu, emphasizing their superior properties compared to undoped BaTiO<sub>3</sub>. Notably, the Ln dopants significantly influence the ferroelectric, ferromagnetic, luminescent, and piezocatalytic properties, where the ionic radius, doping mechanisms, defect formation, and preparation methods play a role. Theoretical studies and advanced characterization data indicate that Ln dopants improve the performance of BaTiO<sub>3</sub> by stabilizing structural defects, affecting site occupancy, and improving insulation resistance. Understanding the defect chemistry and Ln ion distribution in Ln-doped BaTiO<sub>3</sub> systems can help optimize their functional properties for next-generation technologies and sustainable energy applications.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500006","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145058095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The Ruddlesden-Popper 5d iridate Sr2IrO4 is an antiferromagnetic Mott insulator with the electronic, magnetic, and structural properties highly intertwined. Voltage control of its magnetic state is of intense fundmenatal and technological interest but remains to be demonstrated. Here, the tuning of magnetotransport properties in 5.2 nm Sr2IrO4 via interfacial ferroelectric PbZr0.2Ti0.8O3 is reported. The conductance of the epitaxial PbZr0.2Ti0.8O3/Sr2IrO4 heterostructure exhibits ln(T) behavior that is characteristic of 2D correlated metal, in sharp contrast to the thermally activated behavior followed by 3D variable range hopping observed in single-layer Sr2IrO4 films. Switching PbZr0.2Ti0.8O3 polarization induces nonvolatile, reversible resistance modulation in Sr2IrO4. At low temperatures, the in-plane magnetoresisance in the heterostructure transitions from positive to negative at high magnetic fields, opposite to the field dependence in single-layer Sr2IrO4. In the polarization down state, the out-of-plane anisotropic magnetoresistance RAMR exhibits sinusoidal angular dependence, with a 90° phase shift below 20 K. For the polarization up state, unusual multi-level resistance pinning appears in RAMR below 30 K, pointing to enhanced magnetocrystalline anisotropy. The work sheds new light on the intriguing interplay of interface lattice coupling, charge doping, magnetoelastic effect, and possible incipient ferromagnetism in Sr2IrO4, facilitating the functional design of its electronic and material properties.
{"title":"Ferroelectric Control of Anisotropic Magnetoresistance in Ultrathin Sr2IrO4 Films toward 2D Metallic Limit","authors":"Yuanyuan Zhang, Qiuchen Wu, Yifei Hao, Xia Hong","doi":"10.1002/apxr.202400208","DOIUrl":"10.1002/apxr.202400208","url":null,"abstract":"<p>The Ruddlesden-Popper 5<i>d</i> iridate Sr<sub>2</sub>IrO<sub>4</sub> is an antiferromagnetic Mott insulator with the electronic, magnetic, and structural properties highly intertwined. Voltage control of its magnetic state is of intense fundmenatal and technological interest but remains to be demonstrated. Here, the tuning of magnetotransport properties in 5.2 nm Sr<sub>2</sub>IrO<sub>4</sub> via interfacial ferroelectric PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> is reported. The conductance of the epitaxial PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub>/Sr<sub>2</sub>IrO<sub>4</sub> heterostructure exhibits ln(<i>T</i>) behavior that is characteristic of 2D correlated metal, in sharp contrast to the thermally activated behavior followed by 3D variable range hopping observed in single-layer Sr<sub>2</sub>IrO<sub>4</sub> films. Switching PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> polarization induces nonvolatile, reversible resistance modulation in Sr<sub>2</sub>IrO<sub>4</sub>. At low temperatures, the in-plane magnetoresisance in the heterostructure transitions from positive to negative at high magnetic fields, opposite to the field dependence in single-layer Sr<sub>2</sub>IrO<sub>4</sub>. In the polarization down state, the out-of-plane anisotropic magnetoresistance <i>R</i><sub>AMR</sub> exhibits sinusoidal angular dependence, with a 90° phase shift below 20 K. For the polarization up state, unusual multi-level resistance pinning appears in <i>R</i><sub>AMR</sub> below 30 K, pointing to enhanced magnetocrystalline anisotropy. The work sheds new light on the intriguing interplay of interface lattice coupling, charge doping, magnetoelastic effect, and possible incipient ferromagnetism in Sr<sub>2</sub>IrO<sub>4</sub>, facilitating the functional design of its electronic and material properties.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400208","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144811281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A vortex of twisted light beams serves as a streamline to organize and present the primary research objectives of singular electromagnetics/singular optics. As reviewed by Jiafu Wang, Xuezhi Zheng and co-workers in article number 2400083, these objectives include phase singularities in complex scalar fields, polarization singularities in complex vector fields, and 3D topological defects (specifically, four types are presented: optical skyrmions, hopfions, knots, and Möbius strips). These research objectives are well-recognized within the communities of electromagnetics, optics, photonics, metamaterials, and plasmonics, as well as acoustics, while also capturing the attention of a broader audience from other research fields or even non-research readers.