Materials Today Electronics最新文献_第3页

Artificial intelligence for post-moore field-effect transistors: a review and perspective 后摩尔场效应晶体管的人工智能研究进展与展望

IF 7.4

Materials Today Electronics

Pub Date : 2025-09-05 DOI: 10.1016/j.mtelec.2025.100172

Xiang Li, Nan Jiang, Wenhan Zhou, Xiaoyi Zhang, Yang Hu, Shuo Wang, Huipu Wang, Hengze Qu, Haibo Zeng, Shengli Zhang

As Moore’s Law approaches its fundamental physical limits, the development of post-Moore field-effect transistors (FETs) has emerged as a critical pathway to sustain the advancement of semiconductor technology. Artificial intelligence (AI), with its unparalleled capabilities in data-driven modeling, optimization, and predictive analytics, is revolutionizing the design, simulation, and fabrication of next-generation FETs. This review systematically examines the methodological frameworks, algorithmic strategies, and multidimensional applications of AI in FETs research, with particular emphasis on high-throughput screening and performance prediction of channel materials, gate dielectrics, and electrode materials, alongside device architecture optimization. Furthermore, we highlight future opportunities at the intersection of AI to redefine the frontiers of post-Moore electronics. This review aims to inspire multidisciplinary efforts toward AI-empowered FET innovation, bridging the gap between computational intelligence and semiconductor engineering for sustainable technological progress.

随着摩尔定律接近其基本物理极限，后摩尔场效应晶体管（fet）的发展已成为维持半导体技术进步的关键途径。人工智能（AI）在数据驱动建模、优化和预测分析方面具有无与伦比的能力，正在彻底改变下一代场效应管的设计、仿真和制造。本文系统地研究了人工智能在场效应管研究中的方法框架、算法策略和多维应用，特别强调了通道材料、栅极电介质和电极材料的高通量筛选和性能预测，以及器件架构优化。此外，我们强调了人工智能交叉领域的未来机会，以重新定义后摩尔电子的前沿。本综述旨在激发人工智能驱动FET创新的多学科努力，弥合计算智能和半导体工程之间的差距，以实现可持续的技术进步。

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引用次数: 0

Exploration and analysis of high-K wrapped underlap based GaN SOI FinFET for enriched performance towards RF applications 探索和分析基于高k包覆的GaN SOI FinFET，以提高射频应用的性能

IF 7.4

Materials Today Electronics

Pub Date : 2025-09-04 DOI: 10.1016/j.mtelec.2025.100170

Sneha Singh , Rudra Sankar Dhar , Harith Ahmad , Mousa I. Hussein

GaN Semiconductor on Insulator (SOI) FinFET with high-k wrapped underlaps and TiO₂ gate oxide is initially developed, explored and analysed for enhanced performances suitable for RF applications. The impact of employing SOI substrate layer and high-k wrapped underlaps on various electrical parameters, such as I_on, I_off, electric field, potential, I_on/I_off (switching ratio), SS, energy band in conduction and valence band regions are extensively investigated and compared with existing devices. An analytical threshold voltage (V_th) model for the GaN SOI FinFET is derived that delivers a good match with the acquired value, while an excellent experimental calibration is also presented. The device demonstrates significant improvement in electrical and RF/analog performances on incorporation of SOI substrate and high-k wrapped underlaps that minimize parasitic capacitance and fringing field effects resulting in ∼14 % increase in cut-off frequency and 167 % enhancement in transconductance leading to enhanced AC performances. The proposed device also observed to exhibit superior switching characteristics with ∼11 % reduction in subthreshold swing and an increase in I_on/I_off ratio of 154 % compared to existing FinFETs, while other SCEs (Short Channel Effects) are well controlled making it suitable for low-power and high-performance CMOS circuits. Additionally, linearity metrics such as VIP2, VIP3, and IIP3 show enrichment with the device achieving lower harmonic distortions (IMD3 and THD) thereby ensuing suitability for RF and analog circuit designs. These results underscore the potential of GaN SOI FinFETs with high-k underlap designs for high-speed, low-power applications in IOT and 5G/6 G technologies, contributing to the development of green and sustainable electronics.

GaN半导体绝缘体（SOI） FinFET具有高k包覆下圈和TiO2栅极氧化物，初步开发，探索和分析了适合射频应用的增强性能。采用SOI衬底层和高k包覆层对各种电学参数的影响，如离子、Ioff、电场、电位、离子/Ioff（开关比）、SS、导带和价带区域的能带进行了广泛的研究和比较。导出了GaN SOI FinFET的分析阈值电压（Vth）模型，该模型与采集值匹配良好，同时还提供了良好的实验校准。该器件通过掺入SOI衬底和高k封装下包，显著改善了电气和RF/模拟性能，最大限度地减少了寄生电容和边缘场效应，导致截止频率增加约14%，跨导增强167%，从而增强了交流性能。与现有的finfet相比，该器件还表现出优异的开关特性，亚阈值摆幅减少约11%，离子/Ioff比增加154%，而其他sce（短通道效应）控制良好，适用于低功耗和高性能CMOS电路。此外，线性度指标如VIP2、VIP3和IIP3显示，随着器件实现更低的谐波失真（IMD3和THD），从而适用于RF和模拟电路设计。这些结果强调了具有高k underlap设计的GaN SOI finfet在物联网和5G/ 6g技术中的高速、低功耗应用的潜力，有助于绿色和可持续电子产品的发展。

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引用次数: 0

Glass-like thermal conductivity in higher manganese silicides with grain boundary nanostructures 具有晶界纳米结构的高硅化锰的类玻璃导热性

IF 7.4

Materials Today Electronics

Pub Date : 2025-08-12 DOI: 10.1016/j.mtelec.2025.100169

Youming Xu , Shuchen Li , Shucheng Guo , Jianshi Zhou , Li Shi , Xi Chen

Higher manganese silicides (HMSs) have emerged as promising candidates for environmentally friendly thermoelectric (TE) materials due to their earth-abundant and non-toxic composition. We report grain boundary engineering in ruthenium-doped HMSs via a melt-quenching followed by annealing method. This approach promotes the formation of MnSi nanoprecipitates and nanopores, preferentially near grain boundaries. The presence of these nanostructures results in a weak temperature-dependent thermal conductivity, resembling glass-like thermal transport behavior. A two-channel model incorporating propagons and diffusons describes this glass-like thermal conductivity, with diffusons contributing about 60 % of the lattice thermal conductivity at 300 K. Furthermore, the quench-annealing process enhances electrical conductivity while preserving a large Seebeck coefficient, which is attributed to a high density-of-states effective mass. As a result of improved power factor and reduced thermal conductivity, the figure of merit zT value increases by 33 % at 300 K compared to undoped HMS synthesized via solid-state reaction. These findings present a promising strategy for manipulating phonon dynamics in functional materials and designing efficient TE systems.

高硅化锰（hms）由于其丰富且无毒的成分而成为环境友好型热电（TE）材料的有希望的候选者。我们报道了通过熔融淬火后退火的方法对钌掺杂hms进行晶界工程。这种方法促进了MnSi纳米沉淀物和纳米孔的形成，尤其是在晶界附近。这些纳米结构的存在导致了弱的温度依赖导热性，类似于玻璃样的热输运行为。一个包含传播和扩散的双通道模型描述了这种类似玻璃的导热系数，在300 K时，扩散约占晶格导热系数的60%。此外，淬火退火工艺提高了电导率，同时保持了较大的塞贝克系数，这归因于高状态密度的有效质量。由于功率因数的提高和热导率的降低，在300 K时的zT值与通过固相反应合成的未掺杂HMS相比提高了33%。这些发现为控制功能材料中的声子动力学和设计高效的TE系统提供了一种有前途的策略。

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引用次数: 0

Micro-nano additive manufacturing for advanced electronic packaging of singulated chips 单芯片先进电子封装的微纳增材制造

Materials Today Electronics

Pub Date : 2025-07-22 DOI: 10.1016/j.mtelec.2025.100168

Zhiwen Zhou , Zihan Li , Wenrui Zhang , Yijie Bian , Xing Qiu , Lujun Huang , Mojun Chen

The high costs associated with frontend packaging services, coupled with the incompatibility of wafer-level backend technologies with singulated chips, present significant challenges to the development of high-performance semiconductor devices. Micro-nano additive manufacturing (AM) has emerged as a transformative solution for the packaging of singulated chip, offering customizable designs, rapid prototyping capabilities, and the fabrication of complex three-dimensional (3D) structures. This review highlights the pivotal role of micro-nano AM in the fabrication of 3D antennas, copper pillar micro-bumps, and redistribution layers (RDLs), while also addressing the challenges associated with heterogeneous integration and thermal management. By synergizing AM with conventional packaging techniques, this technology accelerates chip validation, reduces production costs, and enables multifunctional integration. Nevertheless, to realize its full potential at scale, AM still faces critical challenges such as limited scalability and structural consistency. This article provides a comprehensive overview of the integration of AM technologies into advanced electronic packaging, highlighting their potential to revolutionize next-generation semiconductor manufacturing and electronic integration.

与前端封装服务相关的高成本，加上晶圆级后端技术与单一芯片的不兼容性，对高性能半导体器件的发展提出了重大挑战。微纳增材制造（AM）已经成为单一芯片封装的变革性解决方案，提供可定制设计，快速原型制作能力以及复杂三维（3D）结构的制造。这篇综述强调了微纳AM在3D天线、铜柱微凸点和再分配层（rdl）的制造中的关键作用，同时也解决了与异质集成和热管理相关的挑战。通过AM与传统封装技术的协同作用，该技术加速了芯片验证，降低了生产成本，并实现了多功能集成。然而，为了在规模上实现其全部潜力，增材制造仍然面临着诸如有限的可扩展性和结构一致性等关键挑战。本文全面概述了将增材制造技术集成到先进的电子封装中，强调了它们革新下一代半导体制造和电子集成的潜力。

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引用次数: 0

Stabilized biskyrmion states in annealed CoFeB bilayer with different interfaces 具有不同界面的退火CoFeB双分子层中铋态的稳定

Materials Today Electronics

Pub Date : 2025-07-19 DOI: 10.1016/j.mtelec.2025.100166

Warda Al Saidi , Selma Amara , Myo T. Zar Myint , Salim Al Harthi , Gianluca Setti , Rachid Sbiaa

This study investigates the stability of skyrmions and biskyrmions in perpendicular magnetic tunneling junctions with a thick CoFeB/Ta/CoFeB free layer. The samples showed a magnetoresistance of ∼ 41 % when annealed at 230 °C. Magnetic force microscopy revealed the existence of skyrmions and biskyrmions at room temperature in the as-deposited state and under an external magnetic field. Annealing at 330 °C enhanced interfacial Dzyaloshinskii-Moriya interaction (DMI) and crystallinity, enabling the spontaneous coexistence of these topological structures. Micromagnetic simulations explored the interplay between DMI strength, sign, and skyrmion chirality. Skyrmions exhibited repulsive interactions while biskyrmions displayed attractive interactions due to the difference in helicities. The study highlights the influence of multilayer structure and varying Ta layer thicknesses on the DMI chirality, which modulates the formation of complex spin textures. These results provide an understanding of skyrmion and biskyrmion dynamics and their potential for spintronic applications, including racetrack memory and data storage technologies.

本文研究了具有厚CoFeB/Ta/CoFeB自由层的垂直磁隧结中skyrmions和biskyrmions的稳定性。在230°C退火时，样品的磁电阻为~ 41%。在室温下和外加磁场作用下，用磁力显微镜观察发现在沉积状态下存在着skyrmions和biskymions。在330℃下退火增强了界面Dzyaloshinskii-Moriya相互作用（DMI）和结晶度，使这些拓扑结构能够自发共存。微磁模拟探索了DMI强度、符号和skyrmion手性之间的相互作用。由于螺旋度的差异，Skyrmions表现出排斥相互作用，而biskymions表现出吸引相互作用。研究强调了多层结构和不同Ta层厚度对DMI手性的影响，从而调节了复杂自旋织构的形成。这些结果提供了对skyrmion和biskyrmion动力学的理解及其在自旋电子学应用中的潜力，包括赛道存储器和数据存储技术。

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引用次数: 0

Humidity sensors for wearable health monitoring and human-machine interaction 用于穿戴式健康监测和人机交互的湿度传感器

Materials Today Electronics

Pub Date : 2025-07-16 DOI: 10.1016/j.mtelec.2025.100167

Xin Liu , Cong Xiao , Huabin Yang , Qirui Zhang , Na Zhou , Haiyang Mao

With the rapid development of wearable technology, humidity sensors have become increasingly important in the fields of health monitoring and human-machine interaction. This paper reviews the latest advancements in humidity sensors for wearable health applications, highlighting their applications in key areas such as breath monitoring, emotion recognition, diaper monitoring, and skin moisture detection. Due to their simple structure, high sensitivity, and non-contact detection capabilities, humidity sensors are gradually becoming a core technology for achieving real-time health monitoring and intelligent interaction. We provide an overview of the material innovations and development directions in current humidity sensor technology. Additionally, we systematically discuss the significance of humidity sensors in dynamic physiological signal monitoring and their potential applications in smart healthcare, sports training, emotion recognition, and non-contact interaction. Despite the broad prospects of humidity sensors in various applications, they still face several specific challenges. Finally, this paper proposes future research directions, calling for in-depth exploration of material innovations, system integration, and intelligent applications of humidity sensors to promote the development of personalized healthcare and smart health management.

随着可穿戴技术的快速发展，湿度传感器在健康监测和人机交互领域的作用越来越重要。本文综述了用于可穿戴健康应用的湿度传感器的最新进展，重点介绍了其在呼吸监测、情绪识别、尿布监测和皮肤湿度检测等关键领域的应用。湿度传感器由于结构简单、灵敏度高、非接触式检测能力强，正逐渐成为实现实时健康监测和智能交互的核心技术。综述了当前湿度传感器技术的材料创新和发展方向。此外，我们系统地讨论了湿度传感器在动态生理信号监测中的意义，以及它们在智能医疗、运动训练、情绪识别和非接触互动方面的潜在应用。尽管湿度传感器在各种应用中有着广阔的前景，但它们仍然面临着一些具体的挑战。最后，提出了未来的研究方向，呼吁在材料创新、系统集成、湿度传感器智能应用等方面进行深入探索，推动个性化医疗和智慧健康管理的发展。

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引用次数: 0

Huge anisotropic magneto-thermal switching in high-purity polycrystalline compensated metals 高纯度多晶补偿金属的大各向异性磁热开关

Materials Today Electronics

Pub Date : 2025-07-12 DOI: 10.1016/j.mtelec.2025.100165

Poonam Rani , Yuto Watanabe , Takuma Shiga , Yuya Sakuraba , Hikaru Takeda , Minoru Yamashita , Ken-ichi Uchida , Aichi Yamashita , Yoshikazu Mizuguchi

Magneto-thermal transport is a promising physical property for thermal management applications. Magneto-thermal switching enables active control of heat flows, and a high switching ratio is desirable for improving performance. Here, we report on the observation of a huge magneto-thermal switching (MTS) effect in high-purity (5 N) Pb polycrystalline wires, where magnetic fields perpendicular to the heat current direction are applied at low temperatures. At T = 3 K and B = 0.1 T, the measured thermal conductivity (κ) of the Pb wire is about 2500 W m^-1 K^-1 but is reduced to ∼150 and ∼5 W m^-1 K^-1 at B = 1 and 9 T, respectively. This strong suppression is attributed to magnetoresistance in compensated metals. Although the huge magnetoresistance has been studied in single crystals with field along the selected orbitals, our results demonstrate that a huge MTS can similarly be realized even in flexible polycrystalline wires. This finding highlights the practical potential of magneto-thermal control in low-temperature thermal management, including applications in space environments where temperatures are around 3 K.

磁-热输运是热管理应用中很有前途的物理性质。磁热开关能够主动控制热流，高开关比是提高性能所需要的。在这里，我们报告了在低温下施加垂直于热流方向的磁场时，在高纯度（5 N） Pb多晶线中观察到巨大的磁热开关（MTS）效应。在T = 3 K和B = 0.1 T时，测得的铅丝导热系数（κ）约为2500 W m-1 K-1，但在B = 1和9 T时分别降至~ 150和~ 5 W m-1 K-1。这种强抑制归因于补偿金属中的磁电阻。虽然我们已经在单晶中研究了沿选定轨道场的巨大磁阻，但我们的结果表明，即使在柔性多晶导线中也可以实现巨大的磁阻。这一发现突出了磁热控制在低温热管理中的实际潜力，包括在温度约为3 K的空间环境中的应用。

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引用次数: 0

MXene-enhanced hydrogel cardiac patch with high electrical conductivity, mechanical strength, and excellent biocompatibility mxene增强水凝胶心脏贴片具有高导电性、机械强度和优异的生物相容性

Materials Today Electronics

Pub Date : 2025-06-30 DOI: 10.1016/j.mtelec.2025.100163

Fei Wang , Fuying Liang , Qi Chen , Jingcheng Huang , Xi Wang , Wei Cheng , Jizhai Cui , Fan Xu , Yongfeng Mei , Xiaojun Wu , Enming Song

Myocardial infarction (MI), a leading cause of death worldwide, triggers cardiomyocyte death and scar tissue formation, disrupting electrical conduction and impairing cardiac function, which may ultimately progress to heart failure. In this study, we develop a high-conductivity and high-toughness hydrogel cardiac patch by incorporating MXene nanosheets into a PVA/PAM hydrogel. This cardiac patch shows superior mechanical properties, with a tensile strength of 190 kPa and elongation over 1250%, while MXene enhances the electrical conductivity of hydrogel, benefiting the restoration of conduction in infarcted areas. Additionally, strong adhesion to muscle and skin tissues has been proved, with the maximum adhesion strength reaching 15 kPa. Biocompatibility tests also reveal high cell viability. These findings provide additional options for cardiac functional repair and MI treatment.

心肌梗死（MI）是世界范围内死亡的主要原因之一，它会引发心肌细胞死亡和瘢痕组织形成，扰乱电传导并损害心功能，最终可能发展为心力衰竭。在这项研究中，我们通过将MXene纳米片掺入PVA/PAM水凝胶中，开发了一种高导电性和高韧性的水凝胶心脏贴片。该心脏贴片具有优异的力学性能，抗拉强度为190 kPa，伸长率超过1250%，而MXene增强了水凝胶的电导率，有利于梗死区传导的恢复。对肌肉和皮肤组织具有较强的粘附性，最大粘附强度可达15 kPa。生物相容性测试也显示高细胞活力。这些发现为心脏功能修复和心肌梗死治疗提供了额外的选择。

引用次数: 0

Accelerated discovery of vanadium oxide compositions: A WGAN-VAE framework for materials design 钒氧化物成分的加速发现：材料设计的WGAN-VAE框架

Materials Today Electronics

Pub Date : 2025-06-25 DOI: 10.1016/j.mtelec.2025.100155

Danial Ebrahimzadeh, Sarah S. Sharif, Yaser M. Banad

The discovery of novel materials with tailored electronic properties is crucial for modern device technologies, but time-consuming empirical methods hamper progress. We present an inverse design framework combining an enhanced Wasserstein Generative Adversarial Network (WGAN) with a specialized Variational Autoencoder (VAE) to accelerate the discovery of stable vanadium oxide (V–O) compositions. Our approach features (1) a WGAN with integrated stability constraints and formation energy predictions, enabling direct generation of thermodynamically feasible structures, and (2) a refined VAE capturing atomic positions and lattice parameters while maintaining chemical validity. Applying this framework, we generated 451 unique V–O compositions, with 91 stable and 44 metastable under rigorous thermodynamic criteria. Notably, we uncovered several novel V

_{2}

O

_{3}

configurations with formation energies below the Materials Project convex hull, revealing previously unknown stable phases. Detailed spin-polarized DFT+U calculations showed distinct electronic behaviors, including promising half-metallic characteristics. Our approach outperforms existing methods in both quality and stability, demonstrating about 20

%

stability rate under strict criteria compared to earlier benchmarks. Additionally, phonon calculations performed on selected compositions confirm dynamic stability: minor imaginary modes at 0 K likely stem from finite-size effects or known phase transitions, suggesting that these materials remain stable or metastable in practical conditions. These findings establish our framework as a powerful tool for accelerated materials discovery and highlight promising V–O candidates for next-generation electronic devices.

发现具有定制电子特性的新材料对现代设备技术至关重要，但耗时的经验方法阻碍了进展。我们提出了一个逆设计框架，结合了增强的Wasserstein生成对抗网络（WGAN）和专门的变分自编码器（VAE），以加速发现稳定的氧化钒（V-O）成分。我们的方法具有以下特点：(1)具有集成稳定性约束和地层能量预测的WGAN，能够直接生成热力学上可行的结构；(2)在保持化学有效性的同时捕获原子位置和晶格参数的改进VAE。应用这一框架，我们生成了451种独特的V-O成分，其中91种在严格的热力学标准下稳定，44种亚稳。值得注意的是，我们发现了几种新的V2O3结构，其地层能量低于Materials Project凸包，揭示了以前未知的稳定相。详细的自旋极化DFT+U计算显示出不同的电子行为，包括有希望的半金属特征。我们的方法在质量和稳定性方面都优于现有的方法，与早期的基准测试相比，在严格的标准下显示出约20%的稳定性。此外，在选定的成分上进行的声子计算证实了动态稳定性：0 K下的小虚模可能源于有限尺寸效应或已知的相变，这表明这些材料在实际条件下保持稳定或亚稳态。这些发现使我们的框架成为加速材料发现的有力工具，并突出了下一代电子器件中有前途的V-O候选者。

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引用次数: 0

Wideband photoelectric detector based on SnSb2Te4 single crystal at room temperature 基于SnSb2Te4单晶的室温宽带光电探测器

Materials Today Electronics

Pub Date : 2025-06-19 DOI: 10.1016/j.mtelec.2025.100158

Jinjie Lu , Qiyuan Zhang , Niangjuan Yao , Siyuan Lei , Yingjian Ren , Chengyu Leng , Yanqing Gao , Wei Zhou , Lin Jiang , Zhiming Huang , Junhao Chu

Terahertz (THz) wave, as the transition region between microwave and infrared light in the electromagnetic spectrum, shows unique technical advantages in the fields such as high-speed communication, biomedical imaging, astronomical spectral analysis, and non-destructive security inspection. However, THz detection faces key technological bottlenecks due to the factors of unmatched material bandgap, serious dark current, and low absorption. In this study, high quality of SnSb₂Te₄ single crystal was prepared by chemical vapor transport (CVT) and wide-spectrum photo detectors were fabricated from visible light to THz wave at room temperature with high responsivities of 16,162, 8077, and 3434 A W^-1 at characteristic frequencies of 0.0249 THz, 0.346 THz, and 0.509 THz, respectively, as well as ultra-low noise equivalent power of 7.33 fW Hz^-1/2 and fast response time of 12 μs. Our results demonstrate that SnSb₂Te₄-based photoelectric detectors have significant application prospects in the next generation of wide-spectrum optoelectronic devices.

太赫兹（THz）波作为电磁波谱中微波与红外光之间的过渡区域，在高速通信、生物医学成像、天文光谱分析、无损安全检测等领域显示出独特的技术优势。然而，由于材料带隙不匹配、暗电流严重、吸收低等因素，太赫兹探测面临着关键的技术瓶颈。本研究采用化学气相传输（CVT）法制备了高质量的SnSb2Te4单晶，并在室温下制备了可见光到太赫兹波的广谱光探测器，其特征频率分别为0.0249 THz、0.346 THz和0.509 THz，高响应率分别为16,162、8077和3434 A W-1，超低噪声等效功率为7.33 fW Hz-1/2，快速响应时间为12 μs。研究结果表明，基于snsb2te4的光电探测器在下一代广谱光电器件中具有重要的应用前景。

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引用次数: 0