Materials Today Electronics最新文献_第2页

Lateral photovoltage in natural pyrite: Mechanism, model, and characteristic 天然黄铁矿的侧向光电压：机制、模型和特性

IF 7.4

Materials Today Electronics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtelec.2025.100183

Xuecong Liu, Kun Zhao, Yalin Zhang, Xiaotong Xu, Xinyang Miao

The organic, inorganic and impurity interactions in natural pyrite significantly affects the motion state of non-equilibrium charge carriers, resulting in differences in its lateral photovoltage (LPV) compared to conventional semiconductors. In this paper, the LPV of natural pyrite was studied to address the issues of incomplete LPV mechanism and unclear external factors. The generation, recombination, and diffusion mechanisms of photo generated carriers in natural pyrite were elucidated, and a theoretical model of LPV variation with irradiation time and position was established by the trap effect and Schottky barrier at the metal-pyrite contact. Under the irradiations of continuous and pulsed lasers, the LPV of natural pyrite is consistent with the fitting curve of the LPV theoretical model. When laser irradiates the surface electrode of natural pyrite, the Schottky barrier formed by the contact between metallic silver and pyrite enhances the LPV. When the laser irradiates the area between two electrodes, there is a linear relationship between LPV and the laser irradiation position, and the position sensitivity decreases with increasing electrode spacing, while the LPV does not change with the laser irradiation position outside of the electrode and the stable LPV value is positively correlated with the electrode spacing. The results of two-dimensional position response shows that LPV exhibits the linearity and saddle shaped dependences on the irradiation position along x and y directions, respectively. Furthermore, the bias current effectively improves the response rate of LPV. This study will enrich the foundation of the photoelectric effect of natural pyrite, and be expected to help reveal its role in geology and the origin of life.

天然黄铁矿中的有机、无机和杂质相互作用显著影响非平衡载流子的运动状态，导致其横向光电压（LPV）与传统半导体不同。针对天然黄铁矿LPV机制不完整、外部因素不明确等问题，对其LPV进行了研究。阐明了天然黄铁矿中光生载流子的产生、重组和扩散机理，并利用金属-黄铁矿接触处的陷阱效应和肖特基势垒建立了LPV随照射时间和照射位置变化的理论模型。在连续和脉冲激光照射下，天然黄铁矿的LPV与LPV理论模型的拟合曲线一致。当激光照射天然黄铁矿的表面电极时，金属银与黄铁矿接触形成的肖特基势垒增强了LPV。当激光照射两电极之间区域时，LPV与激光照射位置呈线性关系，位置灵敏度随电极间距的增加而降低，而LPV不随激光照射电极外位置的变化而变化，稳定的LPV值与电极间距呈正相关。二维位置响应结果表明，LPV沿x和y方向分别与辐照位置呈线性关系和鞍形关系。此外，偏置电流有效地提高了LPV的响应率。该研究将丰富天然黄铁矿光电效应的研究基础，有助于揭示其在地质和生命起源中的作用。

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引用次数: 0

Controlled growth of Mn1-xZnxFe2O4 ferrite films and opto-electromagnetic properties of two-dimensional graphene/ferrite heterojunction devices Mn1-xZnxFe2O4铁氧体薄膜的受控生长及二维石墨烯/铁氧体异质结器件的光电磁性能

IF 7.4

Materials Today Electronics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtelec.2025.100181

Dainan Zhang, Xinkai Xu, Yida Lei, Jie Li, Tianlong Wen, Zhongyuan Zhang, Huaiwu Zhang

Spinel ferrite thin films have attracted the attention of a new generation of opto-electromagnetic multifunctional integrated devices due to their excellent magnetic semiconductor properties and tunable wide bandgap. In this paper, a novel [graphene/Mn_1-xZn_xFe₂O₄/SiO₂/p-Si] heterojunction field-effect transistor (x = 0.45—0.65) is designed, an n-type spinel Mn_1-xZn_xFe₂O₄ (MnZn) magnetic semiconductor film is grown on a SiO₂/p-Si substrate, and the saturation magnetization and conductivity of the ferrite film are controlled by doping amount x and annealing temperature, and then a monolayer of graphene film is transplanted on its surface through a wet transfer process. The experimental results show that the negative gate voltage exerts a significant modulation effect on both the source-drain current and the photocurrent in the device. This is mainly due to the change in the probability of interband electronic transitions in the graphene film due to the magnetic moment distribution of the MnZn film, resulting in an abrupt change in the drain resistance. The infrared optoelectronic performance test further verified the migration and transformation mechanisms of electrons and photoelectrons under electrical, magnetic and optical fields in graphene/MnZn heterojunction. In addition, terahertz phase shift testing proves that the valence and conduction bands of graphene form multiple secondary energy levels, which can regulate the band gap of the heterojunction. These results will pave the way for field-effect transistors to be modulated not only in optical fields, but also as multifunctional devices in electric and magnetic fields.

尖晶石铁氧体薄膜以其优异的磁性半导体性能和可调谐的宽带隙，成为新一代光电磁多功能集成器件的研究热点。本文设计了一种新型的[石墨烯/Mn1-xZnxFe2O4/SiO2/p-Si]异质结场效应晶体管（x = 0.45-0.65），在SiO2/p-Si衬底上生长n型尖晶石Mn1-xZnxFe2O4 （MnZn）磁性半导体薄膜，通过掺杂量x和退火温度控制铁氧体薄膜的饱和磁化强度和电导率，然后通过湿转移工艺在其表面移植单层石墨烯薄膜。实验结果表明，负栅极电压对器件的源极漏极电流和光电流都有显著的调制作用。这主要是由于MnZn薄膜的磁矩分布改变了石墨烯薄膜中带间电子跃迁的概率，导致漏极电阻发生突变。红外光电性能测试进一步验证了石墨烯/MnZn异质结中电子和光电子在电场、磁场和光场下的迁移和转变机制。此外，太赫兹相移测试证明石墨烯的价带和导带形成多个二次能级，可以调节异质结的带隙。这些结果将为场效应晶体管不仅在光场中调制，而且在电场和磁场中作为多功能器件铺平道路。

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引用次数: 0

A data-driven framework for efficient and physically interpretable prediction of RPA-level adsorption energies 一个数据驱动的框架，用于高效和物理可解释的rpa级吸附能预测

IF 7.4

Materials Today Electronics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtelec.2025.100184

Guolin Cao, Shiyu He, Yirong Zhang, Sha Yang, Shuang Li, Yusheng Li, Ji-Chang Ren

Accurately predicting the adsorption energies of reaction intermediates is crucial for the rational design of heterogeneous catalysts. However, high-accuracy methods such as the random phase approximation (RPA) are computationally expensive, hindering rapid catalytic materials discovery. Although machine learning models have been proposed to address this, they are often trained on less accurate data or lack physical interpretability. In this work, we introduce a comprehensive framework that integrates three key components: (1) feature importance analysis to identify critical descriptors, (2) a multi-fidelity approach that correlates expensive RPA data with cheap low-fidelity calculations, and (3) symbolic regression to derive transparent, analytic models. Notably, the model not only achieves high predictive accuracy (with an R² value of 0.96) using just 9 % of the RPA data, but also offers fundamental insight by explicitly linking surface energy to an electronic descriptor. Our work thus establishes a rapid and interpretable pathway for catalytic materials discovery.

准确预测反应中间体的吸附能对多相催化剂的合理设计至关重要。然而，高精度的方法，如随机相近似（RPA）在计算上是昂贵的，阻碍了快速发现催化材料。尽管已经提出了机器学习模型来解决这个问题，但它们通常是在不太准确的数据上训练的，或者缺乏物理可解释性。在这项工作中，我们引入了一个综合框架，该框架集成了三个关键组件：(1)特征重要性分析，以识别关键描述符；(2)将昂贵的RPA数据与廉价的低保真度计算相关联的多保真度方法；(3)符号回归，以导出透明的分析模型。值得注意的是，该模型不仅仅使用9%的RPA数据就实现了高预测精度（R2值为0.96），而且通过明确地将表面能与电子描述符联系起来，提供了基本的见解。因此，我们的工作为催化材料的发现建立了一个快速和可解释的途径。

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引用次数: 0

Recent advances in graphene-based flexible tactile sensor 石墨烯柔性触觉传感器的研究进展

IF 7.4

Materials Today Electronics

Pub Date : 2025-11-26 DOI: 10.1016/j.mtelec.2025.100185

Wenkai Zhu, Yukai Zhou, YongChang Jiang, Wen Cheng, Lijia Pan, Yi Shi

Flexible tactile sensor is a new type of wearable device that mimics the sensory capabilities of human skin through flexible electronic technology and has broad application prospects in areas such as medical health monitoring, human-computer interaction, and robotics. In recent years, graphene and its derivatives have gradually become important materials for breaking through the performance bottlenecks of sensor due to their unique physical and chemical properties. This paper reviews the recent research of graphene-based flexible tactile sensor: (1) The material characteristics of graphene and its derivatives (GO, RGO) in sensor design; (2) Research of graphene-based flexible sensors based on piezoresistance, piezoelectricity, capacitance, and field effect transistor (FET); (3) The current research directions of graphene-based flexible sensors, including the development of composite materials, bionic structure design, AI-driven functional design, multimodal sensing and structural optimization. While previous reviews have detailed the material and mechanical aspects of graphene sensor, this review provides a unique perspective by focusing on the integration of Artificial Intelligence (AI) throughout the "material-structure-function" framework, revealing the role of AI algorithms in enhancing the sensitivity, stability, and functionality. Finally, this paper analyzes the current existing problems of graphene-based flexible tactile sensor and proposes a series of positive outlooks.

柔性触觉传感器是一种通过柔性电子技术模拟人体皮肤感知能力的新型可穿戴设备，在医疗健康监测、人机交互、机器人等领域有着广阔的应用前景。近年来，石墨烯及其衍生物因其独特的物理化学性质，逐渐成为突破传感器性能瓶颈的重要材料。本文综述了近年来基于石墨烯的柔性触觉传感器的研究进展：(1)石墨烯及其衍生物（GO， RGO）在传感器设计中的材料特性；(2)基于压阻、压电、电容和场效应晶体管（FET）的石墨烯柔性传感器研究；(3)石墨烯柔性传感器目前的研究方向，包括复合材料开发、仿生结构设计、ai驱动功能设计、多模态传感和结构优化。虽然之前的综述已经详细介绍了石墨烯传感器的材料和机械方面，但这篇综述提供了一个独特的视角，重点关注人工智能（AI）在整个“材料-结构-功能”框架中的集成，揭示了AI算法在提高灵敏度、稳定性和功能方面的作用。最后，分析了目前石墨烯柔性触觉传感器存在的问题，并提出了一系列积极的展望。

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引用次数: 0

Angle-sensitive metamaterial based on one-dimensional electrostatic scanning micro-mirror 基于一维静电扫描微镜的角敏感超材料

IF 7.4

Materials Today Electronics

Pub Date : 2025-10-24 DOI: 10.1016/j.mtelec.2025.100180

Xuyang Gao , Zonghong Wu , Xi Li , Yuxin Liu , Yu-Sheng Lin

Dynamic control of terahertz (THz) waves is crucial for next-generation communication and sensing systems, yet achieving this through angular tuning often requires bulky and complex mechanical setups. A design of angle-sensitive metamaterial (ASM), employing the one-dimensional electrostatic scanning micro-mirror (1D-ESMM) as a tunable platform, which is proposed with dual-resonance at 0.5 THz and 2.26 THz. This integrated platform offers a novel solution for high-speed, dynamic control over the incident angle of the THz wave, achieving a maximum tilt angle of ±26.90°. This angular control enables significant modulation of the ASM's optical response. The reflection can be tuned from 81.9% down to 3.5% by varying the incident angle. Furthermore, the device exhibits polarization-dependent characteristics, allowing it to change between single- and dual-resonance states. These results indicate the potential applications of the proposed design in optical imaging, sensing, detecting and communication systems.

太赫兹（THz）波的动态控制对于下一代通信和传感系统至关重要，但通过角度调谐实现这一目标通常需要庞大而复杂的机械设置。提出了一种以一维静电扫描微镜（1D-ESMM）作为可调谐平台的角敏感超材料（ASM）设计，该材料在0.5 THz和2.26 THz处具有双共振。该集成平台为高速、动态控制太赫兹波入射角提供了一种新颖的解决方案，实现了±26.90°的最大倾角。这种角度控制使ASM的光学响应得到显著的调制。通过改变入射角，反射率可以从81.9%调整到3.5%。此外，该器件表现出极化依赖特性，允许它在单共振和双共振状态之间变化。这些结果表明了所提出的设计在光学成像、传感、检测和通信系统中的潜在应用。

引用次数: 0

PN junction for room temperature terahertz detection 用于室温太赫兹探测的PN结

IF 7.4

Materials Today Electronics

Pub Date : 2025-10-16 DOI: 10.1016/j.mtelec.2025.100179

Qinxi Qiu , Lin Jiang , Tuntan Wu , Yongzhen Li , Qiangguo Zhou , Wangchen Mao , Zhiming Huang

PN junction plays a crucial role in modern semiconductor technology but is disappeared in room-temperature terahertz detectors due to a few milli–electron volts of low terahertz photon energy and dominated intrinsic thermal excitation in narrow bandgap materials. Herein, we report a room-temperature terahertz PN junction mechanism to realize terahertz detection by injecting electrons into the junction through the electromagnetic-induced well (EIW) effect, while facilitating electron transport via the junction's built-in electric field. Based on the proposed detection mechanism, heterojunction is constructed with two materials, PdSe₂ and MoTe₂, and it realizes zero-bias detection at room temperature in the terahertz band, effectively addressing the challenges of terahertz detectors. The NEP of the detector is superior to the reported terahertz zero-bias detectors by more than one order of magnitude. Our results break through the response spectral range of PN junction detectors at room temperature and realize high performance of zero-bias terahertz detection.

PN结在现代半导体技术中起着至关重要的作用，但在室温太赫兹探测器中，由于窄带隙材料中低太赫兹光子能量的几毫伏电子和主导的本征热激发而消失。在此，我们报告了一种室温太赫兹PN结机制，通过电磁感应阱（EIW）效应将电子注入结中，同时通过结的内置电场促进电子传输，从而实现太赫兹检测。基于所提出的检测机制，利用PdSe2和MoTe2两种材料构建异质结，实现了室温下太赫兹波段的零偏检测，有效解决了太赫兹探测器的难题。该探测器的NEP优于已报道的太赫兹零偏探测器一个数量级以上。我们的研究结果突破了PN结探测器在室温下的响应光谱范围，实现了高性能的零偏置太赫兹探测。

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引用次数: 0

Metal oxide semiconductor-based negative capacitance field-effect transistors with a sub-threshold swing of below 30 mV/dec 亚阈值摆幅低于30mv /dec的金属氧化物半导体负电容场效应晶体管

IF 7.4

Materials Today Electronics

Pub Date : 2025-09-25 DOI: 10.1016/j.mtelec.2025.100178

Ji Hyeon Min , Seong Cheol Jang , Kyong Jae Kim , You Seung Rim , Hyun-Suk Kim

Effective data processing and low power consumption of electronic devices have been demanded for artificial intelligence technologies. Here, we report IGZO-based negative capacitance field-effect transistors (IGZO NC-FETs) with stacked gate dielectrics composed of ferroelectric Hf_0.5Zr_0.5O₂ and high-k Al₂O_3. The manifestation of negative capacitance behavior was confirmed by the suppression of the thermionic subthreshold swing limit resulted in the improvement of low-power switching performance. The IGZO NC-FET occurs below 30 mV/dec of a steep subthreshold swing (SS), exceptionally across a gate bias range of ±1 V. Furthermore, high-k Al₂O₃ as a stabilizing layer suppresses the hysteresis, effectively coupled with a conventional ferroelectric layer.

人工智能技术对有效的数据处理和电子设备的低功耗提出了要求。在这里，我们报道了基于IGZO的负电容场效应晶体管（IGZO nc - fet），它具有由铁电Hf0.5Zr0.5O2和高k Al2O3组成的堆叠栅介电体。由于抑制了热离子亚阈值摆幅限制，从而提高了低功耗开关性能，从而证实了负电容行为的表现。IGZO NC-FET在±1 V的栅极偏置范围内出现陡的亚阈值摆幅（SS）低于30 mV/dec。此外，高k Al2O3作为稳定层抑制了磁滞，有效地与传统的铁电层耦合。

引用次数: 0

Development of an analytical tool to design photovoltaic solar cells: Analysis in outer space conditions 一种设计光伏太阳能电池的分析工具的发展：外太空条件下的分析

IF 7.4

Materials Today Electronics

Pub Date : 2025-09-25 DOI: 10.1016/j.mtelec.2025.100176

Miguel Eduardo Pereira Gonçalves , P. Mendonça dos Santos , António Baptista , Marcelino dos Santos , João Paulo N. Torres , Ricardo A. Marques Lameirinhas

Various well established solar cell simulation software are presently available; however, they are often closed source, requiring costly licenses, or general-purpose simulation software. The main objective of this work is the development of an analytical tool to model and simulate solar cells, with particular emphasis in space applications. The software was constructed in Python using object-oriented programming by applying the equivalent two-diode electrical model, semiconductor physics, and optical modeling. It was designed to simulate both single- and multi-junction solar cells with additional non-textured anti-reflective coatings and protective layers. A method was also implemented to simulate the effects of ionizing radiation. The program was validated by data comparison with established software and commercially available space solar cells. In both cases, the tool developed was found to have obtained similar results, which seem to indicate that the program is reasonably accurate. Furthermore, three studies were carried out on: Anti-reflection coatings and protective layers, Ionizing-radiation effects and Multi-junction solar cells. In the anti-reflection coatings and protective layers study, it was possible to verify how differences in the type and number of layers affect performance. With the ionizing radiation effects study, the accuracy of the model was tested against research article data. The multi-junction study has shown how important the appropriate selection of semiconductor material, doping, and thickness is to mitigate losses and improve cell performance.

目前有各种完善的太阳能电池仿真软件；然而，它们通常是闭源的，需要昂贵的许可证或通用模拟软件。这项工作的主要目标是开发一种分析工具来模拟和模拟太阳能电池，特别强调空间应用。该软件采用Python语言，采用面向对象编程，应用等效双二极管电学模型、半导体物理和光学建模。它被设计用于模拟单结和多结太阳能电池，并具有额外的非纹理抗反射涂层和保护层。还采用了一种方法来模拟电离辐射的影响。通过与现有软件和商用空间太阳能电池的数据比较，验证了该程序的有效性。在这两种情况下，开发的工具被发现获得了相似的结果，这似乎表明该程序是相当准确的。此外，还对增透涂层和保护层、电离辐射效应和多结太阳能电池进行了研究。在抗反射涂层和保护层的研究中，有可能验证层的类型和数量的差异如何影响性能。通过对电离辐射效应的研究，对模型的准确性进行了对比研究。多结研究表明，适当选择半导体材料、掺杂和厚度对于减轻损耗和提高电池性能是多么重要。

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引用次数: 0

Angle-insensitive multilayer metacoating with dual-band selective emission for infrared camouflage and radiative cooling 用于红外伪装和辐射冷却的双波段选择性发射的角度不敏感多层稳镀膜

IF 7.4

Materials Today Electronics

Pub Date : 2025-09-22 DOI: 10.1016/j.mtelec.2025.100177

Liyan Li , Dongjie Zhou , Jinguo Zhang , Lei Zhou , Junhao Chu , Qiong He , Jiaming Hao

The mid-infrared (MIR) spectral region, covering the atmospheric transmission windows (ATWs) of 3–5 μm (mid-wavelength infrared, MWIR) and 8–13 μm (long-wavelength infrared, LWIR), is critical for applications such as infrared camouflage and radiative cooling due to its low atmospheric absorption. Here, we present a high-efficiency, deep-subwavelength multilayer metacoating (MMC) designed for dual-band emission in the MWIR and LWIR ATWs. Through selective impedance matching, the quad-layer MMC achieves average emissivities of 0.79 in the MWIR and 0.83 in the LWIR ATWs, while suppressing emissivity to 0.33 in the non-ATW range of 5–8 μm. Experimental results confirm these findings, which arise from electromagnetic localization within the multilayer architecture and dissipation in lossy materials (Ti and Cr). Notably, the emitter exhibits angle-insensitive performance, maintaining emissivities of 0.65 (MWIR) and 0.72 (LWIR) at incidence angles up to 70°, and demonstrates effective LWIR camouflage against high-emissivity backgrounds. Theoretical analysis further reveals its potential for nighttime radiative cooling. This work advances scalable, low-cost metacoatings for dual-functional infrared technologies, addressing key challenges in military signature management, thermal regulation, and energy-efficient aerospace systems.

中红外（MIR）光谱区域覆盖3-5 μm（中波长红外，MWIR）和8-13 μm（长波长红外，LWIR）的大气透射窗口（atw），由于其低大气吸收，在红外伪装和辐射冷却等应用中至关重要。在这里，我们提出了一种高效，深亚波长多层稳镀膜（MMC），设计用于MWIR和LWIR ATWs的双频发射。通过选择性阻抗匹配，四层MMC在MWIR波段的平均发射率为0.79，在LWIR波段的平均发射率为0.83，而在5-8 μm的非atw波段的平均发射率为0.33。实验结果证实了这些发现，这些发现是由多层结构内的电磁局域化和损耗材料（Ti和Cr）的耗散引起的。值得注意的是，发射器具有角度不敏感性能，在入射角高达70°时保持0.65 （MWIR）和0.72 （LWIR）的发射率，并且在高发射率背景下表现出有效的LWIR伪装。理论分析进一步揭示了其夜间辐射冷却的潜力。这项工作推进了双功能红外技术的可扩展、低成本元涂层，解决了军事特征管理、热调节和节能航空航天系统中的关键挑战。

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引用次数: 0

Oxygen-pressure driven balancing of interface and bulk scattering in amorphous oxide semiconductor thin-film transistors 氧压驱动的非晶氧化物半导体薄膜晶体管界面与体散射平衡

IF 7.4

Materials Today Electronics

Pub Date : 2025-09-05 DOI: 10.1016/j.mtelec.2025.100171

Che-Yi Lin , Yu-Ching Kuo , I-Chen Liu , Feng-Shou Yang , Yuan-Ming Chang , Po-Wen Chiu , Toshihide Nabatame , Mengjiao Li , Kazuhito Tsukagoshi , Yen-Fu Lin

Oxygen vacancies (V_O) critically influence the electronic properties and stability of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). Here, we investigate the impact of oxygen partial pressure during film deposition on charge transport mechanisms in 10-nm-thick silicon-doped indium oxide (ISO) TFTs. By adjusting the Ar:O₂ ratio (11:1, 8:4, and 6:6), we observe a shift from interface-limited to bulk-scattering-dominated transport. Higher O₂ pressure leads to increased subthreshold swing (SS), positive threshold voltage (V_th) shifts, and larger current fluctuations, suggesting greater charge trapping and mobility degradation. Low-frequency noise (LFN) analysis further reveals a shift in the dominant noise mechanism: interface charge trapping dominates at low O₂ pressure, while bulk carrier scattering prevails at high O₂ pressure. The extracted trap density (N_it) increases by nearly two orders of magnitude, confirming the role of fully oxidized indium atoms in the conducting channel as charge-scattering centers. These findings establish oxygen pressure as a key parameter for balancing interface and bulk effects in AOS TFTs and provide a pathway for optimizing device performance and stability in next-generation oxide electronics.

氧空位（VO）对非晶氧化物半导体（AOS）薄膜晶体管（TFTs）的电子性能和稳定性有重要影响。在这里，我们研究了薄膜沉积过程中氧分压对10nm厚掺硅氧化铟tft中电荷输运机制的影响。通过调整Ar:O2比率（11:1,8:4和6:6），我们观察到从接口限制到大块分散为主的传输的转变。较高的O2压力导致亚阈值摆幅（SS）增加，正阈值电压（Vth）移位和更大的电流波动，表明更大的电荷捕获和迁移率下降。低频噪声（LFN）分析进一步揭示了主导噪声机制的转变：低氧压下界面电荷捕获主导，而高氧压下散体载体散射主导。提取的陷阱密度（Nit）增加了近两个数量级，证实了导电通道中完全氧化的铟原子作为电荷散射中心的作用。这些发现确立了氧气压力是平衡AOS tft中界面和体积效应的关键参数，并为优化下一代氧化物电子器件的性能和稳定性提供了途径。

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引用次数: 0