Micro and Nanostructures最新文献_第4页

GaN MOSHEMTs and MISHEMTs: A comprehensive review of device physics, materials innovation, and technological pathways in power and RF electronics GaN MOSHEMTs和MISHEMTs：功率和射频电子器件物理，材料创新和技术途径的全面回顾

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-12 DOI: 10.1016/j.micrna.2026.208571

A. Danielraj , Reshma P Vengaloor , A. Lakshmi Narayana , C. Sivamani

The rapid evolution of wide bandgap semiconductor technology has positioned gallium nitride (GaN) metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) and metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) as transformative solutions for next-generation power electronics and radio frequency (RF) applications. This comprehensive review examines twenty years of technological advancement in GaN insulated gate devices, from foundational research breakthroughs in 2005 to cutting-edge commercial implementations in 2025. The fundamental advantages of GaN's wide bandgap (3.39 eV), high critical electric field (3.3 MV/cm), and superior electron mobility (2000 cm²/V·s) enable unprecedented device performance characteristics including breakdown voltages exceeding 3 kV, switching frequencies approaching 10 MHz, and power densities surpassing 7 W/mm. This review systematically analyzes the critical technological pillars enabling these achievements: advanced gate dielectric materials ranging from conventional oxides (Al₂O₃, HfO₂, SiO₂) to innovative nitride-based systems (SiN_x, AlN) and emerging ferroelectric compounds; sophisticated device architectures including recessed gate structures, field plate configurations, and multi-channel designs that optimize performance trade-offs; and precision fabrication techniques encompassing atomic layer deposition, plasma-enhanced chemical vapor deposition, and plasma-free processing methods. The analysis reveals remarkable progress in enhancement-mode operation with positive threshold voltages exceeding 4 V, ultra-low gate leakage currents below 10⁻¹² A/mm, and frequency responses extending to 320 GHz. Record achievements include maximum current densities of 545 mA/mm, power-added efficiencies above 75 %, and operating temperatures surpassing 450 °C, positioning these devices as enabling technologies for 5G infrastructure, electric vehicle systems, and harsh environment applications. The comprehensive technological foundation established over two decades provides a robust platform for continued innovation, with emerging ultra-wide bandgap substrates and three-dimensional integration approaches promising even greater performance capabilities for future electronic systems.

宽带隙半导体技术的快速发展使氮化镓（GaN）金属氧化物半导体高电子迁移率晶体管（MOSHEMTs）和金属绝缘体半导体高电子迁移率晶体管（MISHEMTs）成为下一代电力电子和射频（RF）应用的变革性解决方案。本文全面回顾了二十年来氮化镓绝缘栅极器件的技术进步，从2005年的基础研究突破到2025年的前沿商业实施。GaN的宽带隙（3.39 eV）、高临界电场（3.3 MV/cm）和优异的电子迁移率（2000 cm2/V·s）的基本优势使器件具有前所未有的性能特征，包括击穿电压超过3 kV、开关频率接近10 MHz和功率密度超过7 W/mm。本文系统地分析了实现这些成就的关键技术支柱：先进的栅极介电材料，从传统的氧化物（Al2O3, HfO2, SiO2）到创新的氮基系统（SiNx, AlN）和新兴的铁电化合物；复杂的器件架构，包括嵌入式栅极结构、场极板配置和优化性能权衡的多通道设计；精密制造技术包括原子层沉积、等离子体增强化学气相沉积和无等离子体加工方法。分析表明，在正阈值电压超过4 V、超低栅漏电流低于10 - 12 A/mm、频率响应扩展到320 GHz的增强模式工作方面取得了显著进展。创纪录的成就包括最大电流密度545 mA/mm，功率增加效率超过75%，工作温度超过450°C，将这些设备定位为5G基础设施，电动汽车系统和恶劣环境应用的使能技术。二十年来建立的综合技术基础为持续创新提供了强大的平台，新兴的超宽带隙基板和三维集成方法为未来的电子系统提供了更高的性能。

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引用次数: 0

Synthesis of SnS2 modified to sulfated tin oxide by electrochemical method and VOC sensing properties 电化学法合成硫化锡改性SnS2及其对VOC的传感性能

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-12 DOI: 10.1016/j.micrna.2026.208570

Ayşe Nur Şahin , Ahmet Altındal , Zeynep Güven Özdemir

This study investigates the room-temperature gas-sensing performance of next-generation sensors fabricated by electrochemically transforming 2D SnS₂ films into SO₄²⁻/SnO₂ structures. The sensors were prepared on an interdigital transducer via the spin-coating method, followed by low-potential electrochemical oxidation in a sulfuric acid–methanol medium to form a 3D SO₄²⁻/SnO₂ structure. Unlike conventional high-temperature oxidation or chemical etching methods that cause bulk degradation, this study employs a low-potential electrochemical oxidation–sulfation strategy to controllably convert the SnS₂ surface into SO₄²⁻/SnO₂ while preserving the nanostructure. While the Sn core structure remained intact, FTIR, EDX, and XPS analyses confirmed the successful surface sulfation and the formation of sulfate-related chemical states on the SnO₂ surface. XRD analysis verified crystalline-level structural transformation, and SEM imaging revealed distinct surface morphology changes. The gas-sensing performance was systematically evaluated against VOC's vapors over a concentration range of 50–350 ppm, enabling a comprehensive assessment of sensitivity and selectivity. Results showed that the SnS₂-based sensor exhibited high sensitivity to acetone, whereas the SO₄²⁻/SnO₂ structure demonstrated nearly tenfold enhanced responsiveness to NH₃ vapor. Sulfate functionalization introduced Lewis acidic surface sites, strengthening interactions with NH₃ and enabling nA-level responses. Although increased humidity (30–90 % RH) reduced response amplitude, reliable NH₃ sensing was maintained, with interference tests at 50 % RH confirming robust performance. Furthermore, stable and repeatable signals over 10 days demonstrated excellent durability. These results highlight electrochemical surface engineering as an effective strategy to develop metal oxide– and chalcogenide-based NH₃ sensors with improved selectivity, humidity tolerance, and long-term stability.

本研究研究了通过电化学将2D SnS2薄膜转化为SO42−/SnO2结构而制成的下一代传感器的室温气敏性能。采用自旋镀膜法在数字传感器上制备传感器，然后在硫酸-甲醇介质中进行低电位电化学氧化，形成SO42−/SnO2三维结构。与传统的高温氧化或化学蚀刻方法不同，该研究采用低电位电化学氧化-磺化策略，在保持纳米结构的同时，可控地将SnS2表面转化为SO42−/SnO2。在Sn核结构保持完整的情况下，FTIR、EDX和XPS分析证实了SnO2表面成功的硫酸化以及与硫酸盐相关的化学态的形成。XRD分析证实了晶体级结构转变，SEM成像显示了明显的表面形貌变化。在50 - 350ppm的浓度范围内，对VOC的气敏性能进行了系统评估，从而对灵敏度和选择性进行了全面评估。结果表明，基于sns2的传感器对丙酮具有较高的灵敏度，而基于SO42−/SnO2结构的传感器对NH3蒸汽的响应性提高了近10倍。硫酸盐功能化引入了路易斯酸性表面位点，加强了与NH3的相互作用，并使na级反应成为可能。虽然增加湿度（30 - 90% RH）会降低响应幅度，但仍能保持可靠的NH3传感，50% RH的干扰测试证实了其稳健的性能。此外，超过10天的稳定和可重复的信号表明了出色的耐久性。这些结果表明，电化学表面工程是开发基于金属氧化物和硫族化合物的氨传感器的有效策略，具有更好的选择性、湿度耐受性和长期稳定性。

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引用次数: 0

Corrigendum to “Designing CoTb2O4 electrodes integrated with MoTe2 and graphene for high-performance supercapacitors and HER catalysis” [Micro Nanostruct., 209 (2026) 208457] “设计用于高性能超级电容器和HER催化的MoTe2和石墨烯集成的CoTb2O4电极”[微纳米结构]的更正。， 209 (2026) 208457]

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-08 DOI: 10.1016/j.micrna.2025.208535

Sohail Mumtaz , Sameerah I. Al-Saeedi , Arfan Razzaq , Muhammad Imran , Muhammad Azhar Mumtaz , Amir Muhammad Afzal , M.A. Diab , Heba A. El-Sabban

引用次数: 0

Weakening of the internal strain field in InAs/GaAs submonolayer quantum dots due to indium segregation 铟偏析导致InAs/GaAs亚单层量子点内部应变场减弱

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-07 DOI: 10.1016/j.micrna.2026.208567

T.F. Cantalice, S.M. Urahata, A.A. Quivy

InAs/GaAs submonolayer quantum dots rely on the vertical alignment of two-dimensional InAs islands separated by thin GaAs layers. These stacks arise from the local strain field generated by the lattice mismatch between the constituent materials. However, experimental observations show that such quantum dots appear irregular and shorter than expected. Indium segregation is particularly strong in the InAs/GaAs system and is suspected to weaken the internal strain field. To confirm this assumption, we simulated the strain in the GaAs matrix surrounding InAs inclusions with the shape of either a full sphere or a thin truncated hemisphere. The results demonstrate that, when the original two-dimensional InAs islands are realistically represented by a thin truncated hemisphere subjected to strong In segregation, the internal strain is indeed much lower than that required to form full stacks, even for distances as short as a few monolayers between inclusions.

InAs/GaAs亚单层量子点依赖于由薄GaAs层分隔的二维InAs岛的垂直排列。这些叠层是由组成材料之间晶格不匹配产生的局部应变场引起的。然而，实验观察表明，这样的量子点看起来不规则，比预期的要短。铟偏析在InAs/GaAs体系中特别强烈，可能会减弱内部应变场。为了证实这一假设，我们模拟了InAs夹杂物周围的GaAs基体中的应变，其形状为一个完整的球体或一个薄的截断半球。结果表明，当原始的二维InAs岛实际表现为受强In偏析作用的薄截断半球时，内部应变确实远低于形成完整堆叠所需的应变，即使夹杂物之间的距离很短，只有几层单层。

引用次数: 0

Design, optimization and linearity analysis of pocket engineered core-insulator embedded nanosheet FET (C-NSFET) C-NSFET的设计、优化及线性分析

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-07 DOI: 10.1016/j.micrna.2026.208560

Shilpa Sonali , Ashish Raman , Abhishek Chauhan , Prabhat Singh

This work provides a comprehensive performance analysis of Core Embedded Insulator Nanosheet Field Effect Transistors (C-NSFET) with pocket implant. As transistor scaling advances into sub-5nm nodes, NSFETs are a strong candidate to lessen short channel effects. Additionally, the C-NSFETS has demonstrated enhanced performance in terms of reduced off current, which results in a superior I_on/I_off ratio. Pocket engineering has also become a crucial method for boosting carrier transport, lowering leakage, and increasing short-channel management. Using Silvaco TCAD simulator, critical DC metrics such as threshold voltage, I_on and I_off current are examined in connection to pocket doping profiles and geometries for C-NSFET. The device's suitability for linear and high-frequency applications is assessed using analog and RF metrics such as transconductance (gm), higher-order transconductance derivatives (gm2, gm3), VIP2, VIP3, IIP3, IMD3 and parasitic capacitances (Cgs and Cgd). The optimized pocket design significantly improves drive capacity and linearity, which makes them appealing options for future nanosheet-based CMOS devices intended for RF and mixed-signal applications. The pocket-engineered NSFET under consideration has a significant performance advantage over the traditional structure of NSFET. With an enhanced I_on/I_off ratio of 1.52 × 10⁵, the device achieves an ON-state drain current of 7.15 × 10⁻⁵ A. and an OFF-state current of 4.71 × 10⁻¹⁰ A. The effectiveness of pocket engineering for low-power applications is demonstrated by the suggested device's 28.6 % increased I_on/I_off ratio and 40.7 % enhanced ON-current over the traditional NSFET.

本文对具有口袋植入体的核心嵌入式绝缘体纳米片场效应晶体管（C-NSFET）进行了全面的性能分析。随着晶体管缩放到5nm以下节点，nsfet是减少短沟道效应的有力候选。此外，c - nsfts在降低关断电流方面表现出了增强的性能，这导致了优越的离子/关断比。袖珍工程也成为提高载流子输运、降低泄漏、加强短通道管理的重要手段。使用Silvaco TCAD模拟器，研究了C-NSFET的关键直流指标，如阈值电压、离子和关断电流与口袋掺杂曲线和几何形状的关系。该器件对线性和高频应用的适用性使用模拟和RF指标进行评估，例如跨导（gm），高阶跨导导数（gm2, gm3）， VIP2, VIP3, IIP3， IMD3和寄生电容（Cgs和Cgd）。优化后的口袋设计显着提高了驱动容量和线性度，这使得它们成为未来用于射频和混合信号应用的基于纳米片的CMOS器件的诱人选择。所研究的口袋工程NSFET与传统结构的NSFET相比具有显著的性能优势。该器件的on/Ioff比提高到1.52 × 105，导通漏极电流为7.15 × 10−5 A，关断电流为4.71 × 10−10 A。与传统的NSFET相比，该器件的离子/开关比提高了28.6%，导通电流提高了40.7%，证明了口袋工程在低功耗应用中的有效性。

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引用次数: 0

Intelligent plasmonic sensing platform for adrenal cancer: Graphene-based machine learning optimization and high-performance detection 肾上腺癌智能等离子体传感平台：基于石墨烯的机器学习优化和高性能检测

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-06 DOI: 10.1016/j.micrna.2026.208566

Osamah Alsalman

This research presents a graphene-based highly sensitive and machine learning-optimized plasmonic biosensor specifically designed for the early detection of adrenal cancer. The proposed sensor architecture achieves an outstanding sensitivity of 1429 nm/RIU, outperforming many state-of-the-art biosensors. It leverages strong plasmonic resonance shifts resulting from refractive index changes caused by biomolecular interactions related to adrenal cancer markers. To further enhance performance, parametric optimization of structural dimensions—such as resonator height and material layer thicknesses—was conducted, supported by a machine learning (ML) regression model. The model achieved a high prediction accuracy with an R² value of 0.99, indicating near-perfect agreement between simulated and predicted outcomes. Key sensing performance indicators including FOM, Q-Factor and DL were thoroughly analyzed, confirming the sensor’s superiority in precision and detection capability. The ML-assisted design not only accelerated the optimization process but also improved the robustness and adaptability of the biosensor across different operating conditions. The sensor’s excellent spectral response, combined with real-time and label-free detection capabilities, makes it a strong candidate for clinical diagnostics. The sensor has high absorptance and stable spectral response in near-normal and moderate incidence angles, the realistic working parameters of biosensing. Nevertheless, the absorptance is lower at very oblique angles (θ > 70–80°), and performance falls below 0.5 at 80° approximately. This is a constraint of plasmonic resonance coupling and has no impact on the applicability of the sensor in real detection situations where near-normal incidence is generally used. This work demonstrates the promising application of AI-driven sensor design in developing next-generation biosensors for ultra-sensitive and specific detection of adrenal cancer biomarkers.

本研究提出了一种基于石墨烯的高灵敏度和机器学习优化的等离子体生物传感器，专门用于肾上腺癌的早期检测。所提出的传感器架构实现了1429 nm/RIU的出色灵敏度，优于许多最先进的生物传感器。它利用由与肾上腺癌标志物相关的生物分子相互作用引起的折射率变化引起的强等离子共振位移。为了进一步提高性能，在机器学习（ML）回归模型的支持下，对结构尺寸（如谐振器高度和材料层厚度）进行了参数优化。该模型具有较高的预测精度，R2值为0.99，表明模拟结果与预测结果接近完美吻合。对FOM、Q-Factor、DL等关键传感性能指标进行了深入分析，证实了该传感器在精度和检测能力上的优势。机器学习辅助设计不仅加快了优化过程，而且提高了生物传感器在不同工作条件下的鲁棒性和适应性。该传感器出色的光谱响应，结合实时和无标签检测能力，使其成为临床诊断的有力候选者。该传感器在接近正射角和中等入射角条件下具有较高的吸光度和稳定的光谱响应，是生物传感的实际工作参数。然而，在非常斜的角度（θ > 70-80°）下，吸光度较低，在大约80°时，吸光度降至0.5以下。这是等离子体共振耦合的约束，并不影响传感器在实际检测场合的适用性，实际检测场合一般采用近正入射。这项工作证明了人工智能驱动的传感器设计在开发下一代生物传感器以超灵敏和特异性检测肾上腺癌生物标志物方面的应用前景。

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引用次数: 0

A wide temperature benchmark of the Re-G-HCJNFe FET for noise reduction in low-power analog integration 用于低功耗模拟集成降噪的re - g - hcnfe场效应管的宽温度基准

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-06 DOI: 10.1016/j.micrna.2026.208565

Alok Kumar , Abhay Pratap Singh , Abhinav Gupta , Tarun Kumar Gupta

This work presents a Recessed-Gate high-k junctionless nanowire ferroelectric FET (Re-G-HCJNFe FET, HfO₂ gate stack) and benchmark it against a conventional HCJNFe across 200–500 K, showing consistent improvements in analog parameters, and noise parameters. At 300 K, Re-G-HCJNFe lowers the subthreshold slope by ~ 6.4 % and DIBL by ~ 8.9 %, suppresses I_OFF by ∼5 orders of magnitude, and boosts I_ON/I_OFF from ∼4.2 × 10⁴ to ∼1.3 × 10⁸; analog performance strengthens as the transconductance generation function (TGF) rises alongside favourable early voltage (V_EA) and intrinsic gain (A_v) trends. These benefits persist at elevated temperature e.g., at 500 K the subthreshold swing relief remains substantial and the minimum noise figure at 1 THz is reduced by ∼16 % at 300 K, and ∼39 % at 200 K, consistent with negligible gate-leakage current and superior short-channel control. Collectively, the Re-G architecture with high-k/ferroelectric gating makes Re-G-HCJNFe FET to a temperature-robust, low-noise, low-standby-power device suitable for high-temperature mixed-signal blocks (e.g., current mirrors, buffers), low-noise RF, and energy-efficient digital logic. Compact-model development capturing electrostatic parameter with ferroelectric effects, and system-level benchmarking against scaled GAA references in complete analog/RF and low-power digital paths.

本研究提出了一种凹栅高K无结纳米线铁电场效应管（re - g - hcnfe FET， HfO2栅极堆叠），并在200-500 K范围内对其与传统hcnfe进行了基准测试，显示出模拟参数和噪声参数的一致改进。在300 K时，re - g - hcnfe使亚阈值斜率降低了~ 6.4%，使DIBL降低了~ 8.9%，抑制了~ 5个数量级的IOFF，使离子/IOFF从~ 4.2 × 104提高到~ 1.3 × 108；模拟性能随着跨导生成函数（TGF）与有利的早期电压（VEA）和固有增益（Av）趋势一起上升而增强。这些好处在高温下仍然存在，例如，在500k时，亚阈值摆幅缓解仍然很大，在300k时，1thz的最小噪声系数降低了~ 16%，在200k时降低了~ 39%，与可忽略的栅漏电流和卓越的短通道控制一致。总体而言，具有高k/铁电门控的Re-G架构使Re-G- hjnfe FET成为温度鲁棒性，低噪声，低备用功率的器件，适用于高温混合信号块（例如，电流镜，缓冲器），低噪声RF和节能数字逻辑。紧凑型模型开发捕获具有铁电效应的静电参数，并在完整的模拟/RF和低功耗数字路径中针对缩放GAA参考进行系统级基准测试。

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引用次数: 0

Study on the enhanced electric dipole transition ratio of europium (Eu3+) in strontium orthoborate red phosphor and its WLED applications 正硼酸锶红色荧光粉中铕（Eu3+）电偶极跃迁比的增强及其WLED应用研究

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-06 DOI: 10.1016/j.micrna.2026.208562

Shufang Li, Yunfeng Chen, Junqi Tang

Stable and efficient red-emitting phosphors hold significant application value for next-generation phosphor-converted white light-emitting diodes (pc-WLEDs). This study successfully synthesized europium-doped strontium orthoborate (Sr₃B₂O₆: Eu³⁺) red phosphors via a high-temperature solid-state reaction method. The phosphor samples were pure phase and had an average particle size of 1.99 ± 0.88 μm. Near the optimal doping concentration (x = 0.040), the integrated intensity contribution of the ⁵D₀ →⁷F₄ (704 nm) electric-dipole transition was significantly enhanced. The Sr₃B₂O₆ host matrix can effectively increase the electric-dipole transition of Eu³⁺, resulting in chromaticity coordinates (0.629, 0.348) close to those of standard red light and high color purity. The quantum efficiency of Sr_2.96B₂O₆:0.04Eu³⁺ is 33.76 %, with a fluorescence lifetime of 1.349 ms. Furthermore, its luminescence intensity at 498 K remained at 68.90 % of the room temperature intensity. The encapsulated pc-WLED device exhibits white emission with chromaticity coordinates of (0.334, 0.344), and located in the white region. The pc-WLED device also has a high color purity with a high color rendering index (CRI or Ra = 90) and correlated color temperature (CCT) of 5437 K. These results demonstrate the excellent application potential of this phosphor in the field of white LED lighting.

稳定高效的红色发光荧光粉对于下一代白光转换二极管（pc- wled）具有重要应用价值。本研究通过高温固相反应成功合成了铕掺杂的正硼酸锶（Sr3B2O6: Eu3+）红色荧光粉。所得荧光粉为纯相，平均粒径为1.99±0.88 μm。在最佳掺杂浓度（x = 0.040）附近，5D0→7F4 （704 nm）电偶极子跃迁的积分强度贡献显著增强。Sr3B2O6基质能有效提高Eu3+的电偶极跃迁，得到的色度坐标（0.629,0.348）接近标准红光，色纯度高。Sr2.96B2O6:0.04Eu3+的量子效率为33.76%，荧光寿命为1.349 ms。在498 K时，其发光强度保持在室温强度的68.90%。封装后的pc-WLED器件呈现白色发光，色度坐标为（0.334,0.344），位于白色区域。pc-WLED器件还具有较高的色纯度，显色指数高（CRI或Ra = 90），相关色温（CCT）为5437 K。这些结果表明该荧光粉在白光LED照明领域具有良好的应用潜力。

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引用次数: 0

Design and performance investigation of heterojunction electrically doped junctionless TFET for label-free biomolecule detection considering ambipolar conduction 考虑双极性传导的无标记生物分子检测用异质结电掺杂无结TFET的设计与性能研究

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-06 DOI: 10.1016/j.micrna.2026.208564

Priyanka Kwatra , Sajai Vir Singh , Kaushal Nigam , Mukesh Kumar Bind

Present study proposes a biosensor built around heterojunction electrically doped junctionless TFET to obtain label-free biomolecule surveillance to lower fabrication sophistication and expense of nanotechnology biosensors. Dielectric constants of different immobilized biomolecules in interior of nano cavity are changed to determine shift in ambipolar current, perceived as sensing variable. In suggested device, polarity gate-1 (PG-1) bias of 1.2 V and PG-2 bias of −1.2 V, is applied across heterojunction to stimulate n⁺ and p⁺, drain and source, correspondingly. Portion of dielectric oxide layer is etched towards drain channel tunnelling intersection to create nanogap cavity underneath PG-1 terminal, used to trap biomolecule test specimens. Presence of neutral and charged molecules inside cavities have been examined through modifications to electrical properties of suggested biosensor, including electric field, drain current, etc. Subthreshold swing, drain current, threshold voltage, switching ratio, and transconductance-to-current ratio are used to assess suggested biosensor's sensing capability. Suggested HJ-CD-ED-JLTFET biosensor, employing a neutral biomolecule having a dielectric constant of 12, reaches absolute maximum sensitivity of 3.86 × 10⁹ assuming a fully packed nanocavity. To comprehend potential difficulties, implications of non-ideal problems on sensitivity, such as various fill factors (FFs), locations of biomolecules and steric hindrances, are investigated for suggested biosensor.

本研究提出了一种围绕异质结电掺杂无结TFET构建的生物传感器，以实现无标记的生物分子监测，从而降低纳米技术生物传感器的制造复杂性和成本。通过改变纳米腔内不同固定化生物分子的介电常数来确定双极电流的位移，并将其视为传感变量。在该装置中，极性栅极-1 （PG-1）偏置为1.2 V， PG-2偏置为- 1.2 V，在异质结上施加相应的刺激n+和p+，漏极和源极。在PG-1终端下方蚀刻部分介质氧化物层，形成纳米隙腔，用于捕获生物分子测试样品。通过修改建议的生物传感器的电学特性，包括电场、漏极电流等，研究了腔内中性和带电分子的存在。亚阈值摆幅、漏极电流、阈值电压、开关比和跨导电流比用于评估建议的生物传感器的传感能力。本文提出的HJ-CD-ED-JLTFET生物传感器，采用介电常数为12的中性生物分子，在完全填充纳米腔的情况下，绝对最大灵敏度为3.86 × 109。为了理解潜在的困难，研究了非理想问题对灵敏度的影响，如各种填充因子（FFs）、生物分子的位置和空间位阻。

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引用次数: 0

Efficient synthesis and growth mechanisms of CuO nanowires via self-resistive heating 自阻加热法制备CuO纳米线及其生长机理

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-05 DOI: 10.1016/j.micrna.2026.208563

Van Thanh Pham , Nguyen Hai Pham , Van Tan Tran , Oscar Martínez Sacristán , Jyh-Shen Tsay , Viet Tuyen Nguyen , Thu Hang Bui , Trung Kien Do , Quang Loc Do , Cong Doanh Sai , Thi Ha Tran

In this study, we present a fast and facile self-resistive heating method to fabricate copper oxide (CuO) nanowires using copper (Cu) substrates. The effect of growth temperature and time were thoroughly investigated through both experiment and simulations. X-ray diffraction (XRD) and Raman spectroscopy confirmed the successful formation of highly crystalline CuO phase. Scanning electron microscopy (SEM) images demonstrated that the nanowires were uniform in size and at high density, indicating an efficient synthesis process. Additional analyses were conducted to further elucidate a thermodynamic mechanism of the growth of CuO nanowires. Our broad experimental and simulation data on synthesis parameters provides a detailed view on the growth of the nanowires and explains the efficient growth of aligned CuO nanowires synthesized by resistive heating method.

在这项研究中，我们提出了一种快速简便的自阻加热方法，以铜（Cu）为衬底制备氧化铜（CuO）纳米线。通过实验和模拟研究了生长温度和生长时间的影响。x射线衍射（XRD）和拉曼光谱证实了高结晶CuO相的成功形成。扫描电子显微镜（SEM）图像表明，纳米线尺寸均匀，密度高，表明合成工艺高效。进一步分析了CuO纳米线生长的热力学机制。我们对合成参数的广泛实验和模拟数据提供了纳米线生长的详细视图，并解释了电阻加热法合成的排列CuO纳米线的高效生长。

引用次数: 0