Pub Date : 2025-02-08DOI: 10.1016/j.micrna.2025.208101
S. Sreejith , J. Ajayan , N.V. Uma Reddy , M. Manikandan , S. Umamaheswaran , N.V. Raghavendra Reddy
OLEDs (organic LEDs) are thought to be the most competitive alternative for next-generation transparent and flexible displays. Due to its unique characteristics, which include enhanced efficiency, lesser cost, ease of processing, and flexibility, OLEDs have drawn a lot of attention and have already been put to use in flat-panel full-colour displays and in systems of solid lighting-state. Solid-state-lighting and full-colour displays both benefit greatly from the use of efficient blue OLEDs. Deep blue (DB) emitting substances, in particular, not just serve as a donor of energy for low-energy dopants to create green, white and red, but they also improve the colour spectrum and lower the amount of power used. However, low efficiency and limited working lifetime of DB-OLEDs limit their suitability for commercial use in comparison to green & red-light OLEDs. Because of their inherent large band-gap, DB materials continue to lag significantly behind green & red organic emitters in terms of quantum-efficiency (QE), colour quality, and charge mobility, making the creation of extremely effective DB fluorescent substances an urgent and challenging research topic. This review article examines the structural designs and materials used in DB-OLED fabrication that enhance their efficiency and stability along with the challenges in their fabrication, and their future application prospects.
{"title":"Recent advancements in high efficiency deep blue organic light emitting diodes","authors":"S. Sreejith , J. Ajayan , N.V. Uma Reddy , M. Manikandan , S. Umamaheswaran , N.V. Raghavendra Reddy","doi":"10.1016/j.micrna.2025.208101","DOIUrl":"10.1016/j.micrna.2025.208101","url":null,"abstract":"<div><div>OLEDs (organic LEDs) are thought to be the most competitive alternative for next-generation transparent and flexible displays. Due to its unique characteristics, which include enhanced efficiency, lesser cost, ease of processing, and flexibility, OLEDs have drawn a lot of attention and have already been put to use in flat-panel full-colour displays and in systems of solid lighting-state. Solid-state-lighting and full-colour displays both benefit greatly from the use of efficient blue OLEDs. Deep blue (DB) emitting substances, in particular, not just serve as a donor of energy for low-energy dopants to create green, white and red, but they also improve the colour spectrum and lower the amount of power used. However, low efficiency and limited working lifetime of DB-OLEDs limit their suitability for commercial use in comparison to green & red-light OLEDs. Because of their inherent large band-gap, DB materials continue to lag significantly behind green & red organic emitters in terms of quantum-efficiency (QE), colour quality, and charge mobility, making the creation of extremely effective DB fluorescent substances an urgent and challenging research topic. This review article examines the structural designs and materials used in DB-OLED fabrication that enhance their efficiency and stability along with the challenges in their fabrication, and their future application prospects.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208101"},"PeriodicalIF":2.7,"publicationDate":"2025-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The Use of Quantum Dots (QDs) in solar cells are emerging because of their eco-friendly, cheaper and better electrical and optical characteristics. Kesterite based Quantum dot solar cells(QDSC) face critical challenges towards the width and thickness of QDs layer to enhance photo absorption and overall efficiency. An efficient engineering of all around barrier QD solar cell (AABQD) utilizing Nano structures may improve the overall performance in QDSC. The goal is to explore the performance of QDSC by varying QD layer (CZGS/CZGSe) thickness from 5 nm to 15 nm and width of the QDs (CZGSe) varies from 50 nm to 150 nm. A thin barrier layer (CZGS) of 5 nm is inserted between each QD layers that coupled with electrical and optical performance. The behavior of carrier quantization changes when QDs are surrounded by barriers from all sides. The confinement and escape of the carrier are more pronounced compared to normal QD structure. The remarkable efficiency of 18.45% and Voc of 1.103v are obtained in AAQBD Solar cell as compared to efficiency 15.3% and Voc of 1.075V in traditional QDs Solar cell.
{"title":"Stride potential of CZGS/CZGSe quantum dot solar cell influence of nano-structured all-around-barriers","authors":"Smruti Ranjan Mohanty , Chandrasekar Palanisamy , Sudarsan Sahoo , Soumyaranjan Routray","doi":"10.1016/j.micrna.2025.208083","DOIUrl":"10.1016/j.micrna.2025.208083","url":null,"abstract":"<div><div>The Use of Quantum Dots (QDs) in solar cells are emerging because of their eco-friendly, cheaper and better electrical and optical characteristics. Kesterite based Quantum dot solar cells(QDSC) face critical challenges towards the width and thickness of QDs layer to enhance photo absorption and overall efficiency. An efficient engineering of all around barrier QD solar cell (AABQD) utilizing Nano structures may improve the overall performance in QDSC. The goal is to explore the performance of QDSC by varying QD layer (CZGS/CZGSe) thickness from 5 nm to 15 nm and width of the QDs (CZGSe) varies from 50 nm to 150 nm. A thin barrier layer (CZGS) of 5 nm is inserted between each QD layers that coupled with electrical and optical performance. The behavior of carrier quantization changes when QDs are surrounded by barriers from all sides. The confinement and escape of the carrier are more pronounced compared to normal QD structure. The remarkable efficiency of 18.45% and Voc of 1.103v are obtained in AAQBD Solar cell as compared to efficiency 15.3% and Voc of 1.075V in traditional QDs Solar cell.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208083"},"PeriodicalIF":2.7,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143372156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-05DOI: 10.1016/j.micrna.2025.208098
M. Lablali , H. Mes-adi , M. Mazroui
In this study, we have used molecular dynamics simulations to investigate the growth mechanisms of the thin film deposited on a Si (001) substrate with different Al:Cu ratios of (1:1, 2:1, 1:2). The interactions between Al, Cu, and Si atoms have been described using the Modified Embedded Atom Method (MEAM). In this study, we investigate how the different Al–Cu compositions and incident energies affect the morphological, structural, and mechanical characteristics. Our results show that the growth occurs via an island growth mode. At 0.1 eV, the deposited film exhibits a surface containing islands under different Al:Cu ratios. However, the islands gradually disappear as the incident energy increases to 0.4 eV. According to the RDF results, the film maintains its amorphous structure despite film composition and incident energy changes. On the other hand, in terms of interdiffusion, the Al atoms penetrate deeper into the substrate than the Cu atoms. Additionally, as the incident energy increased, the rate of penetration intensified. This increase in incident energy also affects the lattice distortion positions within the substrate matrix and internal stress development. Moreover, exhibits elevated normal stress values compared to the other studied compositions of Al:Cu.
{"title":"Growth of Al–Cu compound thin film on Si substrate: Molecular dynamics simulation","authors":"M. Lablali , H. Mes-adi , M. Mazroui","doi":"10.1016/j.micrna.2025.208098","DOIUrl":"10.1016/j.micrna.2025.208098","url":null,"abstract":"<div><div>In this study, we have used molecular dynamics simulations to investigate the growth mechanisms of the <span><math><mrow><mtext>AlCu</mtext></mrow></math></span> thin film deposited on a Si (001) substrate with different Al:Cu ratios of (1:1, 2:1, 1:2). The interactions between Al, Cu, and Si atoms have been described using the Modified Embedded Atom Method (MEAM). In this study, we investigate how the different Al–Cu compositions and incident energies affect the morphological, structural, and mechanical characteristics. Our results show that the growth occurs via an island growth mode. At 0.1 eV, the deposited film exhibits a surface containing islands under different Al:Cu ratios. However, the islands gradually disappear as the incident energy increases to 0.4 eV. According to the RDF results, the film maintains its amorphous structure despite film composition and incident energy changes. On the other hand, in terms of interdiffusion, the Al atoms penetrate deeper into the substrate than the Cu atoms. Additionally, as the incident energy increased, the rate of penetration intensified. This increase in incident energy also affects the lattice distortion positions within the substrate matrix and internal stress development. Moreover, <span><math><mrow><msub><mtext>Al</mtext><mn>2</mn></msub><mtext>Cu</mtext></mrow></math></span> exhibits elevated normal stress values compared to the other studied compositions of Al:Cu.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208098"},"PeriodicalIF":2.7,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143377499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-05DOI: 10.1016/j.micrna.2025.208084
Bandi Venkata Chandan, Kaushal Kumar Nigam, Adil Tanveer
Fabrication complexity, low ON-current, and reliability challenges are significant concerns for Tunnel FETs in the semiconductor industry. This study addresses these issues by conducting systematic numerical simulations to introduce a novel N-based Magnesium Silicide tunneling interface (Mg2Si-N-TFET). Utilizing Mg2Si in the source region enhances key figures of merit (FOMs), such as ON-current, V, SS, and the switching ratio, due to its low bandgap, which reduces the tunneling barrier. To optimize the device for low-power and high-speed applications, it is essential to assess its reliability under various constraints. Consequently, this study evaluates the Mg2Si-N-TFET thermal performance over a temperature range of 250 K to 450 K and exhibits less sensitivity, making it a promising candidate for low-power switching and biosensing applications, even at elevated temperatures.
{"title":"Performance and Reliability Investigation of Mg2Si based Tunnel FET under Temperature Variations for High-Sensitivity Applications","authors":"Bandi Venkata Chandan, Kaushal Kumar Nigam, Adil Tanveer","doi":"10.1016/j.micrna.2025.208084","DOIUrl":"10.1016/j.micrna.2025.208084","url":null,"abstract":"<div><div>Fabrication complexity, low ON-current, and reliability challenges are significant concerns for Tunnel FETs in the semiconductor industry. This study addresses these issues by conducting systematic numerical simulations to introduce a novel N<span><math><msup><mrow></mrow><mrow><mo>+</mo></mrow></msup></math></span>-based Magnesium Silicide tunneling interface (Mg<sub>2</sub>Si-N<span><math><msup><mrow></mrow><mrow><mo>+</mo></mrow></msup></math></span>-TFET). Utilizing Mg<sub>2</sub>Si in the source region enhances key figures of merit (FOMs), such as ON-current, V<span><math><msub><mrow></mrow><mrow><mi>T</mi><mi>H</mi></mrow></msub></math></span>, SS, and the switching ratio, due to its low bandgap, which reduces the tunneling barrier. To optimize the device for low-power and high-speed applications, it is essential to assess its reliability under various constraints. Consequently, this study evaluates the Mg<sub>2</sub>Si-N<span><math><msup><mrow></mrow><mrow><mo>+</mo></mrow></msup></math></span>-TFET thermal performance over a temperature range of 250 K to 450 K and exhibits less sensitivity, making it a promising candidate for low-power switching and biosensing applications, even at elevated temperatures.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208084"},"PeriodicalIF":2.7,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143372155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper proposes and designs a composite device, the Ge-based IT-FinFET, which integrates FinFET and SOI MOSFET structures. The device features strong gate control and high driving current capabilities, enabling efficient rectification over a wide range, with promising applications in the field of microwave wireless power transfer. Considering the complex and multifaceted effects caused by variations in the structural parameters of the composite device, this study incorporates multiple critical device parameters, including transfer characteristics and the on/off current ratio, to comprehensively evaluate their impact on electrical performance. The optimal structural parameters for rectification applications are determined through detailed analysis. Simulation results demonstrate that the proposed IT-FinFET achieves efficient rectification over a wide input power range from −20 dBm to 42 dBm, spanning a total range of 62 dBm. Notably, 61 % of the power range achieves rectification efficiencies exceeding 30 %, extending the range by 20 dBm compared to Si-based MOSFET. Furthermore, a range of 13 dBm achieves rectification efficiencies exceeding 50 %, over three times wider than that of Si-based MOSFET. These results underscore the capability of the proposed IT-FinFET to achieve efficient rectification across a broad range of input power levels.
{"title":"Wide range rectifier using Ge-based IT-FinFET for 2.45 GHz microwave wireless power transmission","authors":"Jianjun Song, Ailan Tang, Sihan Bi, Yue Wu, Yuchen Zhang","doi":"10.1016/j.micrna.2025.208096","DOIUrl":"10.1016/j.micrna.2025.208096","url":null,"abstract":"<div><div>This paper proposes and designs a composite device, the Ge-based IT-FinFET, which integrates FinFET and SOI MOSFET structures. The device features strong gate control and high driving current capabilities, enabling efficient rectification over a wide range, with promising applications in the field of microwave wireless power transfer. Considering the complex and multifaceted effects caused by variations in the structural parameters of the composite device, this study incorporates multiple critical device parameters, including transfer characteristics and the on/off current ratio, to comprehensively evaluate their impact on electrical performance. The optimal structural parameters for rectification applications are determined through detailed analysis. Simulation results demonstrate that the proposed IT-FinFET achieves efficient rectification over a wide input power range from −20 dBm to 42 dBm, spanning a total range of 62 dBm. Notably, 61 % of the power range achieves rectification efficiencies exceeding 30 %, extending the range by 20 dBm compared to Si-based MOSFET. Furthermore, a range of 13 dBm achieves rectification efficiencies exceeding 50 %, over three times wider than that of Si-based MOSFET. These results underscore the capability of the proposed IT-FinFET to achieve efficient rectification across a broad range of input power levels.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208096"},"PeriodicalIF":2.7,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143349654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study evaluates the performance of a recessed gate (Re-G) dielectric-engineered cylindrical junction less nanowire ferroelectric field-effect transistor (Re-G-CJNFe-FET) in comparison to a conventional cylindrical junction less nanowire ferroelectric field-effect transistor (CJNFe-FET). Introducing a Re-G design enhances the efficiency and overall device performance, achieving significant improvements in key metrics such as sub-threshold slope (SS), leakage current, transconductance (gm), output conductance (gd), and the Switching ratio (ION/IOFF). The proposed device also shows superior performance in the transconductance generation function (TGF) and output conductance (gd), early voltage (VEA) while maintaining moderate linearity across parameters like second- and third-order harmonics, input intercept point (IIP3), voltage intercept points (VIP2, VIP3), harmonic distortion (HD2, HD3), 1-db compression, and third-order intermodulation distortion (IMD3). Simulation results obtained from the ATLAS 3-D simulator validate these findings, highlighting the potential of the Re-G-CJNFe-FET for analog applications and low power consumption in digital electronics.
{"title":"Next-generation ferroelectric FETs: Modeling of recessed gate cylindrical junction less nanowire FETs for optimal electrostatic and linearity characteristics","authors":"Abhay Pratap Singh , R.K. Baghel , Sukeshni Tirkey , Alok Kumar","doi":"10.1016/j.micrna.2025.208095","DOIUrl":"10.1016/j.micrna.2025.208095","url":null,"abstract":"<div><div>This study evaluates the performance of a recessed gate (Re-G) dielectric-engineered cylindrical junction less nanowire ferroelectric field-effect transistor (Re-G-CJNFe-FET) in comparison to a conventional cylindrical junction less nanowire ferroelectric field-effect transistor (CJNFe-FET). Introducing a Re-G design enhances the efficiency and overall device performance, achieving significant improvements in key metrics such as sub-threshold slope (SS), leakage current, transconductance (g<sub>m</sub>), output conductance (g<sub>d</sub>), and the Switching ratio (I<sub>ON</sub>/I<sub>OFF</sub>). The proposed device also shows superior performance in the transconductance generation function (TGF) and output conductance (g<sub>d</sub>), early voltage (V<sub>EA</sub>) while maintaining moderate linearity across parameters like second- and third-order harmonics, input intercept point (IIP<sub>3</sub>), voltage intercept points (VIP<sub>2</sub>, VIP<sub>3</sub>), harmonic distortion (HD<sub>2</sub>, HD<sub>3</sub>), 1-db compression, and third-order intermodulation distortion (IMD<sub>3</sub>). Simulation results obtained from the ATLAS 3-D simulator validate these findings, highlighting the potential of the Re-G-CJNFe-FET for analog applications and low power consumption in digital electronics.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208095"},"PeriodicalIF":2.7,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143168533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1016/j.micrna.2024.208047
Jianhua Ma , Huimin Lu , Jinglei Wang , Yifan Zhu , Zihua Zhang , Tongjun Yu , Xuecheng Wei , Hua Yang , Jianping Wang
A back-illuminated AlGaN separate absorption and multiplication (SAM) solar-blind ultraviolet (UV) avalanche photodiode (APD) with an enhanced electric field is designed in this work. For the designed APD, a polarization electric field aligned with the applied electric field can be introduced by reducing the Al content of the p-type layer and inserting a multiplication layer with low-Al-content. The calculation results show that the designed APD exhibits a 9.6 V reduction in breakdown voltage, a 29 % increase in avalanche gain, and a 32 % improvement in peak responsivity at the breakdown voltage compared to the conventional SAM APD. In order to maximize the responsivity, further parameter optimization of the multiplication and p-type layers of the designed APD is performed using the Jaya algorithm. The results show that compared to the conventional SAM APD, the peak responsivity at the avalanche breakdown voltage and avalanche gain of the optimized APD are improved by 103 % and 63 %, respectively.
{"title":"Enhanced performance of AlGaN solar-blind ultraviolet avalanche photodiodes through electric field optimization","authors":"Jianhua Ma , Huimin Lu , Jinglei Wang , Yifan Zhu , Zihua Zhang , Tongjun Yu , Xuecheng Wei , Hua Yang , Jianping Wang","doi":"10.1016/j.micrna.2024.208047","DOIUrl":"10.1016/j.micrna.2024.208047","url":null,"abstract":"<div><div>A back-illuminated AlGaN separate absorption and multiplication (SAM) solar-blind ultraviolet (UV) avalanche photodiode (APD) with an enhanced electric field is designed in this work. For the designed APD, a polarization electric field aligned with the applied electric field can be introduced by reducing the Al content of the p-type layer and inserting a multiplication layer with low-Al-content. The calculation results show that the designed APD exhibits a 9.6 V reduction in breakdown voltage, a 29 % increase in avalanche gain, and a 32 % improvement in peak responsivity at the breakdown voltage compared to the conventional SAM APD. In order to maximize the responsivity, further parameter optimization of the multiplication and p-type layers of the designed APD is performed using the Jaya algorithm. The results show that compared to the conventional SAM APD, the peak responsivity at the avalanche breakdown voltage and avalanche gain of the optimized APD are improved by 103 % and 63 %, respectively.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208047"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1016/j.micrna.2024.208060
Siva Rama Krishna Gorla, Chandan Kumar Pandey
<div><div>This work presents a comprehensive analysis of a charge plasma vertical TFET based biosensor with an inverted T-shaped channel (IT-CPTFET), demonstrating improved sensitivity in biomolecules detection compared to the conventional L-shaped CPTFET based biosensor (L-CPTFET). Key design considerations include dual cavity positions, split drain region, dual-channel arrangement, and elevated source positions to optimize tunneling rates, resulting in increased drain current and improved sensitivity of the IT-CPTFET. Both IT-CPTFET and L-CPTFET have been explored as label-free biosensors using dielectric modulation, incorporating a nanocavity under the source electrode. By measuring important DC parameters like ON-state current <span><math><mrow><mo>(</mo><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub><mo>)</mo></mrow></math></span>, subthreshold swing <span><math><mrow><mo>(</mo><mi>S</mi><msub><mrow><mi>S</mi></mrow><mrow><mi>A</mi><mi>v</mi><mi>g</mi></mrow></msub><mo>)</mo></mrow></math></span>, and current-switching ratio (CSR) with the aid of 2D Sentaurus TCAD simulator at different K-values (1.54, 3.57, 6.3, 8, 12) helps to investigate the physics of IT-CPTFET, L-CPTFET and assess their ability to identify various charged and neutral biomolecules. The IT-CPTFET shows superior sensitivity, achieving an <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub></math></span> sensitivity of <span><math><mrow><mn>1</mn><mo>.</mo><mn>18</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>8</mn></mrow></msup></mrow></math></span>, compared to <span><math><mrow><mn>5</mn><mo>.</mo><mn>38</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>7</mn></mrow></msup></mrow></math></span> for the L-CPTFET when detecting Gelatin (K = 12). An increase in the dielectric constant enhances the electric field in the tunneling region, leading to more efficient band-to-band tunneling, which increases the drain current and improves the overall sensitivity of the device. Furthermore, the sensitivity of the device is evaluated with respect to analog and RF parameters that are crucial for practical sensing applications. However, IT-CPTFET offers better performance, demonstrating <span><math><mrow><mn>1</mn><mo>.</mo><mn>9</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>6</mn></mrow></msup></mrow></math></span> for transconductance sensitivity (<span><math><msub><mrow><mi>S</mi></mrow><mrow><msub><mrow><mi>g</mi></mrow><mrow><mi>m</mi></mrow></msub></mrow></msub></math></span>) and <span><math><mrow><mn>3</mn><mo>.</mo><mn>8</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></math></span> for cut-off frequency sensitivity (<span><math><msub><mrow><mi>S</mi></mrow><mrow><msub><mrow><mi>f</mi></mrow><mrow><mi>T</mi></mrow></msub></mrow></msub></math></span>), while the L-CPTFET shows <span><math><mrow><mn>4</mn><mo>.</mo><mn>9</mn><mo>×</mo><mn>1<
{"title":"High-sensitivity detection in biosensors: A comparative study of inverted T- and L-channel charge plasma TFETs","authors":"Siva Rama Krishna Gorla, Chandan Kumar Pandey","doi":"10.1016/j.micrna.2024.208060","DOIUrl":"10.1016/j.micrna.2024.208060","url":null,"abstract":"<div><div>This work presents a comprehensive analysis of a charge plasma vertical TFET based biosensor with an inverted T-shaped channel (IT-CPTFET), demonstrating improved sensitivity in biomolecules detection compared to the conventional L-shaped CPTFET based biosensor (L-CPTFET). Key design considerations include dual cavity positions, split drain region, dual-channel arrangement, and elevated source positions to optimize tunneling rates, resulting in increased drain current and improved sensitivity of the IT-CPTFET. Both IT-CPTFET and L-CPTFET have been explored as label-free biosensors using dielectric modulation, incorporating a nanocavity under the source electrode. By measuring important DC parameters like ON-state current <span><math><mrow><mo>(</mo><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub><mo>)</mo></mrow></math></span>, subthreshold swing <span><math><mrow><mo>(</mo><mi>S</mi><msub><mrow><mi>S</mi></mrow><mrow><mi>A</mi><mi>v</mi><mi>g</mi></mrow></msub><mo>)</mo></mrow></math></span>, and current-switching ratio (CSR) with the aid of 2D Sentaurus TCAD simulator at different K-values (1.54, 3.57, 6.3, 8, 12) helps to investigate the physics of IT-CPTFET, L-CPTFET and assess their ability to identify various charged and neutral biomolecules. The IT-CPTFET shows superior sensitivity, achieving an <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub></math></span> sensitivity of <span><math><mrow><mn>1</mn><mo>.</mo><mn>18</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>8</mn></mrow></msup></mrow></math></span>, compared to <span><math><mrow><mn>5</mn><mo>.</mo><mn>38</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>7</mn></mrow></msup></mrow></math></span> for the L-CPTFET when detecting Gelatin (K = 12). An increase in the dielectric constant enhances the electric field in the tunneling region, leading to more efficient band-to-band tunneling, which increases the drain current and improves the overall sensitivity of the device. Furthermore, the sensitivity of the device is evaluated with respect to analog and RF parameters that are crucial for practical sensing applications. However, IT-CPTFET offers better performance, demonstrating <span><math><mrow><mn>1</mn><mo>.</mo><mn>9</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>6</mn></mrow></msup></mrow></math></span> for transconductance sensitivity (<span><math><msub><mrow><mi>S</mi></mrow><mrow><msub><mrow><mi>g</mi></mrow><mrow><mi>m</mi></mrow></msub></mrow></msub></math></span>) and <span><math><mrow><mn>3</mn><mo>.</mo><mn>8</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></math></span> for cut-off frequency sensitivity (<span><math><msub><mrow><mi>S</mi></mrow><mrow><msub><mrow><mi>f</mi></mrow><mrow><mi>T</mi></mrow></msub></mrow></msub></math></span>), while the L-CPTFET shows <span><math><mrow><mn>4</mn><mo>.</mo><mn>9</mn><mo>×</mo><mn>1<","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208060"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1016/j.micrna.2025.208082
Mohammed Alsawafta
A plasmonic substrate has been suggested as a powerful spectroscopic amplifier to significantly enhance the scattered signal intensity in the Hyper-Raman Scattering (HRS) by exploiting the electromagnetic enhancement effect linked to plasmon excitation in coupled metallic resonators. The proposed dimer configurations include two equilateral nanotriangles of Au material, arranged in an Edge-to-Edge (EE) configuration and illuminated by longitudinally polarized light. For the selected two-particle system, the Finite-Difference Time-Domain (FDTD) electrodynamic simulation tool is employed to systematically investigate the impact of the structural parameters and intrinsic arrangements on the spectral response, nearfield coupling mechanism, and enhancement factor of HRS. Through precise adjustments to the structural characteristics and the internal configuration of the illuminated homodimer, the scattering signal of the HRS process can be increased to an unprecedentedly high value of 10 × 1023. This limit can be further enhanced exponentially by increasing the side length of the coupled resonators.
{"title":"Metallic bowtie antenna for an ultrahigh plasmonic-based improvement of Raman scattering process","authors":"Mohammed Alsawafta","doi":"10.1016/j.micrna.2025.208082","DOIUrl":"10.1016/j.micrna.2025.208082","url":null,"abstract":"<div><div>A plasmonic substrate has been suggested as a powerful spectroscopic amplifier to significantly enhance the scattered signal intensity in the Hyper-Raman Scattering (HRS) by exploiting the electromagnetic enhancement effect linked to plasmon excitation in coupled metallic resonators. The proposed dimer configurations include two equilateral nanotriangles of Au material, arranged in an Edge-to-Edge (EE) configuration and illuminated by longitudinally polarized light. For the selected two-particle system, the Finite-Difference Time-Domain (FDTD) electrodynamic simulation tool is employed to systematically investigate the impact of the structural parameters and intrinsic arrangements on the spectral response, nearfield coupling mechanism, and enhancement factor of HRS. Through precise adjustments to the structural characteristics and the internal configuration of the illuminated homodimer, the scattering signal of the HRS process can be increased to an unprecedentedly high value of 10 × 10<sup>23</sup>. This limit can be further enhanced exponentially by increasing the side length of the coupled resonators.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208082"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143372339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper focuses on the numerical modeling of the quaternary alloy CdxSb2-x(S1-ySey)3 as a lower cell absorber in an Sb2S3-based tandem system. To this end, the governing laws of the evolution of the band gap and the electron affinity of the alloy are established and solved with reference to the defined substitution proportions. The results show that the band gap of the alloy decreases from 1.88 eV to 0.93 eV with increasing x and y proportions. In a planar heterojunction of FTO/(ZnO/TiO2)/Absorber/Spiro-OMeTAD/Au configuration, the CdxSb2-x(S1-ySey)3 alloy, used as the absorber, exhibits a maximum efficiency of 8.81 %, which surpasses the 5.08 % efficiency of the Sb2S3 absorber. For specific band parameters and proportions (Eg = 1.22 eV, χ = 4.25 eV, x = 0.04 and y = 0.9), Cd0.04Sb1.96(S0.1Se0.9)3 is used as the lower solar cell absorber in a tandem structure based on Sb2S3 as the upper cell. After optimization of the absorber thickness, the upper and lower cells demonstrated an efficiency of 8.42 % and 13.74 %. A preliminary simulation of the Sb2S3/Cd0.04Sb1.96(S0.1Se0.9)3 tandem structure indicated an efficiency of 17.98 %. Following the matching of the current between the upper and lower cells for a thickness of 0.4 μm of each absorber, the Sb2S3/Cd0.04Sb1.96(S0.1Se0.9)3 tandem solar cell demonstrated an efficiency of 16.19 %. This difference in performance is explained by the lower cell operating in saturation. These results illustrate the prospective applicability of CdxSb2-x(S1-ySey)3 as an absorber material in both single and multi-junction solar cells.
{"title":"Computational modeling of a Sb2S3 /CdxSb2-x(S1-ySey)3 monolithic tandem photocell structure","authors":"Pierre Gérard Darel Kond Ngue , Ariel Teyou Ngoupo , Aimé Magloire Ntouga Abena , Hichem Bencherif , Ismail Hossain , Jean-Marie Bienvenu Ndjaka","doi":"10.1016/j.micrna.2024.208057","DOIUrl":"10.1016/j.micrna.2024.208057","url":null,"abstract":"<div><div>This paper focuses on the numerical modeling of the quaternary alloy Cd<sub><em>x</em></sub>Sb<sub>2-<em>x</em></sub>(S<sub>1-<em>y</em></sub>Se<sub><em>y</em></sub>)<sub>3</sub> as a lower cell absorber in an Sb<sub>2</sub>S<sub>3</sub>-based tandem system. To this end, the governing laws of the evolution of the band gap and the electron affinity of the alloy are established and solved with reference to the defined substitution proportions. The results show that the band gap of the alloy decreases from 1.88 eV to 0.93 eV with increasing <em>x</em> and <em>y</em> proportions. In a planar heterojunction of FTO/(ZnO/TiO<sub>2</sub>)/Absorber/Spiro-OMeTAD/Au configuration, the Cd<sub><em>x</em></sub>Sb<sub>2-<em>x</em></sub>(S<sub>1-<em>y</em></sub>Se<sub><em>y</em></sub>)<sub>3</sub> alloy, used as the absorber, exhibits a maximum efficiency of 8.81 %, which surpasses the 5.08 % efficiency of the Sb<sub>2</sub>S<sub>3</sub> absorber. For specific band parameters and proportions (Eg = 1.22 eV, χ = 4.25 eV, <em>x</em> = 0.04 and <em>y</em> = 0.9), Cd<sub>0.04</sub>Sb<sub>1.96</sub>(S<sub>0.1</sub>Se<sub>0.9</sub>)<sub>3</sub> is used as the lower solar cell absorber in a tandem structure based on Sb<sub>2</sub>S<sub>3</sub> as the upper cell. After optimization of the absorber thickness, the upper and lower cells demonstrated an efficiency of 8.42 % and 13.74 %. A preliminary simulation of the Sb<sub>2</sub>S<sub>3</sub>/Cd<sub>0.04</sub>Sb<sub>1.96</sub>(S<sub>0.1</sub>Se<sub>0.9</sub>)<sub>3</sub> tandem structure indicated an efficiency of 17.98 %. Following the matching of the current between the upper and lower cells for a thickness of 0.4 μm of each absorber, the Sb<sub>2</sub>S<sub>3</sub>/Cd<sub>0.04</sub>Sb<sub>1.96</sub>(S<sub>0.1</sub>Se<sub>0.9</sub>)<sub>3</sub> tandem solar cell demonstrated an efficiency of 16.19 %. This difference in performance is explained by the lower cell operating in saturation. These results illustrate the prospective applicability of Cd<sub><em>x</em></sub>Sb<sub>2-<em>x</em></sub>(S<sub>1-<em>y</em></sub>Se<sub><em>y</em></sub>)<sub>3</sub> as an absorber material in both single and multi-junction solar cells.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208057"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
扫码关注我们
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号