In this study, GaN high electron mobility transistors (HEMTs) with a 2 nm AlN cap layer (AC-HEMTs) were fabricated on SiC substrate. The AlN/AlGaN/AlN/GaN heterostructures feature smooth surface and low sheet resistivity. Compared to GaN HEMTs with a 2 nm GaN cap layer (GC-HEMTs), higher two-dimensional electron gas (2DEG) density was observed in AC-HEMTs due to the passivation and enhanced polarization effects from AlN cap layer. The introduction of AlN cap layer results in fewer additional polarization charge and higher 2DEG density, both of which weaken polarization Coulomb field (PCF) scattering intensity. Thus, AC-HEMTs exhibit higher electron mobility and better DC electrical characteristics including higher drain current, lower on-resistance, larger on/off current ratio and higher transconductance. Moreover, AC-HEMTs show prominent improvement of breakdown voltage from 625 V (GaN cap) to 855 V (AlN cap).
{"title":"High performance of AlGaN/GaN HEMT with AlN cap layer","authors":"Xin Luo, Peng Cui, Tieying Zhang, Xinkun Yan, Siheng Chen, Liu Wang, Jiacheng Dai, Handoko Linewih, Zhaojun Lin, Xiangang Xu, Jisheng Han","doi":"10.1016/j.micrna.2024.208054","DOIUrl":"10.1016/j.micrna.2024.208054","url":null,"abstract":"<div><div>In this study, GaN high electron mobility transistors (HEMTs) with a 2 nm AlN cap layer (AC-HEMTs) were fabricated on SiC substrate. The AlN/AlGaN/AlN/GaN heterostructures feature smooth surface and low sheet resistivity. Compared to GaN HEMTs with a 2 nm GaN cap layer (GC-HEMTs), higher two-dimensional electron gas (2DEG) density was observed in AC-HEMTs due to the passivation and enhanced polarization effects from AlN cap layer. The introduction of AlN cap layer results in fewer additional polarization charge and higher 2DEG density, both of which weaken polarization Coulomb field (PCF) scattering intensity. Thus, AC-HEMTs exhibit higher electron mobility and better DC electrical characteristics including higher drain current, lower on-resistance, larger on/off current ratio and higher transconductance. Moreover, AC-HEMTs show prominent improvement of breakdown voltage from 625 V (GaN cap) to 855 V (AlN cap).</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208054"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1016/j.micrna.2024.208058
Song Du, Yuxiang Lin, Hao Xu, Hao Long
While Gallium Oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) hold great potential for high power applications, effective control of the MOS interface remains a subject of ongoing investigation. Previous studies always focused on interface traps, while overlooking the bulk and broader traps in dielectric layer. In this study, the effects of oxygen plasma treatment on the interface, border and bulk traps of Al2O3/β-Ga2O3 MOS capacitors were systematically investigated through high/low frequency C–V, hysteresis C–V, and forward-bias stress tests. The results showed that devices treated with 50 W plasma power for 1 min effectively passivated the interface dangling bonds and also improved the crystalline quality of Al2O3 dielectrics, exhibiting the lowest interface, border and bulk traps density. In contrast, excess plasma density or total treatment energy introduced etching defects, deteriorating the interface and dielectrics’ quality. The study demonstrates that appropriate oxygen plasma pretreatment provided an effective solution for the future application of high-performance β-Ga2O3 MOS devices.
{"title":"Investigation of interface, border and bulk traps of Al2O3/β-Ga2O3 MOS capacitors via O2 plasma treatment","authors":"Song Du, Yuxiang Lin, Hao Xu, Hao Long","doi":"10.1016/j.micrna.2024.208058","DOIUrl":"10.1016/j.micrna.2024.208058","url":null,"abstract":"<div><div>While Gallium Oxide (Ga<sub>2</sub>O<sub>3</sub>) metal-oxide-semiconductor field-effect transistors (MOSFETs) hold great potential for high power applications, effective control of the MOS interface remains a subject of ongoing investigation. Previous studies always focused on interface traps, while overlooking the bulk and broader traps in dielectric layer. In this study, the effects of oxygen plasma treatment on the interface, border and bulk traps of Al<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> MOS capacitors were systematically investigated through high/low frequency C–V, hysteresis C–V, and forward-bias stress tests. The results showed that devices treated with 50 W plasma power for 1 min effectively passivated the interface dangling bonds and also improved the crystalline quality of Al<sub>2</sub>O<sub>3</sub> dielectrics, exhibiting the lowest interface, border and bulk traps density. In contrast, excess plasma density or total treatment energy introduced etching defects, deteriorating the interface and dielectrics’ quality. The study demonstrates that appropriate oxygen plasma pretreatment provided an effective solution for the future application of high-performance β-Ga<sub>2</sub>O<sub>3</sub> MOS devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208058"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1016/j.micrna.2024.208050
Anubha Goel , Sonam Rewari , R.S. Gupta
In this manuscript, an analytical model has been proposed for Junctionless (JL) Nanotube Field Effect Transistor (FET) as a hydrogen sensor, being called as a Junctionless Gas Tube FET (JL-GT-FET). Palladium (Pd) and platinum (Pt) has been exploited as the catalytic metal gate and are compared for their performance metrics. The proposed sensor, works on the principle that the pressure on the catalytic metal gate will be altered by the change in the concentration of gas molecules which in turn modulates the work-function of the metal gate. Thus, it can rightly be inferred that the change in the work-function of the metal is being used to detect the presence of hydrogen gas molecules. The performance parameters being analyzed are threshold voltage, electric field, surface potential, drain current, Transconductance, output conductance and sensitivity. Here, in this manuscript, an analytical model has also been developed for Junctionless Gas Tube FET (JL-GT-FET) as a hydrogen sensor. The Junctionless Gas FET based sensor has been compared with Nanowire FET under similar pressure and catalytic conditions. It has been established that the Junctionless Gas Tube FET exhibits much higher efficiency in sensing the pressure variations. Also, it has been established that the modeling so obtained by solving the 2-D Poisson equation with appropriate boundary conditions for the Junctionless Gas Tube FET are much in coherence with the results so obtained by simulating the device structure on the Atlas 3-D device simulator.
{"title":"Performance investigation of neoteric Pt/Pd Junctionless gas tube FET(JL-GT-FET) as a Hydrogen(H2) gas sensor for industrial applications-analytical model","authors":"Anubha Goel , Sonam Rewari , R.S. Gupta","doi":"10.1016/j.micrna.2024.208050","DOIUrl":"10.1016/j.micrna.2024.208050","url":null,"abstract":"<div><div>In this manuscript, an analytical model has been proposed for Junctionless (JL) Nanotube Field Effect Transistor (FET) as a hydrogen sensor, being called as a Junctionless Gas Tube FET (JL-GT-FET). Palladium (Pd) and platinum (Pt) has been exploited as the catalytic metal gate and are compared for their performance metrics. The proposed sensor, works on the principle that the pressure on the catalytic metal gate will be altered by the change in the concentration of gas molecules which in turn modulates the work-function of the metal gate. Thus, it can rightly be inferred that the change in the work-function of the metal is being used to detect the presence of hydrogen gas molecules. The performance parameters being analyzed are threshold voltage, electric field, surface potential, drain current, Transconductance, output conductance and sensitivity. Here, in this manuscript, an analytical model has also been developed for Junctionless Gas Tube FET (JL-GT-FET) as a hydrogen sensor. The Junctionless Gas FET based sensor has been compared with Nanowire FET under similar pressure and catalytic conditions. It has been established that the Junctionless Gas Tube FET exhibits much higher efficiency in sensing the pressure variations. Also, it has been established that the modeling so obtained by solving the 2-D Poisson equation with appropriate boundary conditions for the Junctionless Gas Tube FET are much in coherence with the results so obtained by simulating the device structure on the Atlas 3-D device simulator.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208050"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1016/j.micrna.2024.208039
S. Zouaghi , A. Ben Abdelwahed , H. Fitouri , W.S. Alharbi , A. Rebey
GaAsBi/GaAs quantum dots (QDs) samples with a bimodal size distribution grown by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE) on p-GaAs substrates and annealed at different temperatures were investigated by photoluminescence (PL) measurements. The analyses of the Arrhenius fit of the integrated PL intensity show two types of non-radiative recombination processes, describing the strong thermal quenching of PL. The thermal quenching of the as-grown sample is clearly quicker compared to the annealed QD samples. It is attributed to a higher density of non-radiative Bi complexes and native defects related to GaAs host lattice. The activation energy value for the large QD increases in the annealed samples suggests a modification in the depth of the confining potential. The temperature dependence of the PL peak energy of small QD presents an S-shape variation, while the PL line width follows a non-monotonic form. These behaviors have been progressively reduced in the annealed samples. These experimental results have been interpreted in the context of the thermally activated carrier transfer process between different QDs. Thus, annealing reduces the localized state density and therefore improves the optical quality of GaAsBi/GaAs QDs.
{"title":"Influence of annealing on the thermal quenching of photoluminescence in GaAsBi/GaAs quantum dots with bimodal inhomogeneous broadening","authors":"S. Zouaghi , A. Ben Abdelwahed , H. Fitouri , W.S. Alharbi , A. Rebey","doi":"10.1016/j.micrna.2024.208039","DOIUrl":"10.1016/j.micrna.2024.208039","url":null,"abstract":"<div><div>GaAsBi/GaAs quantum dots (QDs) samples with a bimodal size distribution grown by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE) on <em>p</em>-GaAs substrates and annealed at different temperatures were investigated by photoluminescence (PL) measurements. The analyses of the Arrhenius fit of the integrated PL intensity show two types of non-radiative recombination processes, describing the strong thermal quenching of PL. The thermal quenching of the as-grown sample is clearly quicker compared to the annealed QD samples. It is attributed to a higher density of non-radiative Bi complexes and native defects related to GaAs host lattice. The activation energy value for the large QD increases in the annealed samples suggests a modification in the depth of the confining potential. The temperature dependence of the PL peak energy of small QD presents an S-shape variation, while the PL line width follows a non-monotonic form. These behaviors have been progressively reduced in the annealed samples. These experimental results have been interpreted in the context of the thermally activated carrier transfer process between different QDs. Thus, annealing reduces the localized state density and therefore improves the optical quality of GaAsBi/GaAs QDs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208039"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1016/j.micrna.2024.208063
Shuang Zhang , Guoqing Zhang , Hui Wu , Zhen Cui
The finite-difference time-domain method is employed in this study to analyze the influence of structural parameters on ultraviolet light absorption, and computer-aided design techniques are utilized to simulate the relevant characteristics of day-blind ultraviolet photodetectors. Two absorption structures are designed: metal nanoparticles-Ga2O3 and metal nanoparticles-Ga2O3-metal layers. The second structure achieves an absorption peak intensity of over 0.95 in the ultraviolet region. By investigating the electric field at the resonance peak, localized surface plasmon resonance is found to occur at the interface between the nanoparticles and Ga2O3, significantly enhancing the absorption of photon energy by the nanoparticles, which benefits the design of ultraviolet photodetectors. Furthermore, a gold nanoparticle Ga2O3 photodetector is designed, and it is discovered that the responsivity and external quantum efficiency of the gold nanoparticle Ga2O3 photodetector can reach up to 4.13 A/W and 2276 %, respectively, with the gold nanoparticles and gold absorption layer significantly improving the device's optoelectronic performance. The effect of Ga2O3 thickness on optoelectronic performance is also explored, showing that the detector's performance can be enhanced by adjusting the Ga2O3 thickness.
{"title":"Localized surface plasmon enhanced the photoresponse performance of Ga2O3 ultraviolet photodetectors","authors":"Shuang Zhang , Guoqing Zhang , Hui Wu , Zhen Cui","doi":"10.1016/j.micrna.2024.208063","DOIUrl":"10.1016/j.micrna.2024.208063","url":null,"abstract":"<div><div>The finite-difference time-domain method is employed in this study to analyze the influence of structural parameters on ultraviolet light absorption, and computer-aided design techniques are utilized to simulate the relevant characteristics of day-blind ultraviolet photodetectors. Two absorption structures are designed: metal nanoparticles-Ga<sub>2</sub>O<sub>3</sub> and metal nanoparticles-Ga<sub>2</sub>O<sub>3</sub>-metal layers. The second structure achieves an absorption peak intensity of over 0.95 in the ultraviolet region. By investigating the electric field at the resonance peak, localized surface plasmon resonance is found to occur at the interface between the nanoparticles and Ga<sub>2</sub>O<sub>3</sub>, significantly enhancing the absorption of photon energy by the nanoparticles, which benefits the design of ultraviolet photodetectors. Furthermore, a gold nanoparticle Ga<sub>2</sub>O<sub>3</sub> photodetector is designed, and it is discovered that the responsivity and external quantum efficiency of the gold nanoparticle Ga<sub>2</sub>O<sub>3</sub> photodetector can reach up to 4.13 A/W and 2276 %, respectively, with the gold nanoparticles and gold absorption layer significantly improving the device's optoelectronic performance. The effect of Ga<sub>2</sub>O<sub>3</sub> thickness on optoelectronic performance is also explored, showing that the detector's performance can be enhanced by adjusting the Ga<sub>2</sub>O<sub>3</sub> thickness.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208063"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1016/j.micrna.2024.208038
Yan Ren , Chao Pang , Baijun Zhang , Honghui Liu , Yiqiang Ni , Shengze Zhou
The recessed-anode AlGaN/GaN Schottky barrier diodes (SBDs) were fabricated by self-aligned process, and the effect of annealing of planar and recessed-anode AlGaN/GaN SBDs were investigated. The interface states of AlGaN/GaN SBD were treated by post anode annealing (PAA), which may be attributed to the reduction of metal-induced gap states (MIGS) at Schottky interface. The interface state density (NSS) of planar and recessed-anode AlGaN/GaN SBDs are suppressed by PAA processes to 1.6 × 1013 eV−1cm−2 and 3.9 × 1014 eV−1cm−2, respectively. It is found that after annealing of AlGaN/GaN SBDs, the SBDs stability is enhanced, the leakage current is reduced, the ideal factor is optimized, and the ON-resistance is reduced. The PAA process can effectively improve the performance of AlGaN/GaN SBDs, which is a key technology to optimize GaN SBDs.
{"title":"The annealing treatment of interface states in planar and recessed-anode AlGaN/GaN Schottky barrier diodes","authors":"Yan Ren , Chao Pang , Baijun Zhang , Honghui Liu , Yiqiang Ni , Shengze Zhou","doi":"10.1016/j.micrna.2024.208038","DOIUrl":"10.1016/j.micrna.2024.208038","url":null,"abstract":"<div><div>The recessed-anode AlGaN/GaN Schottky barrier diodes (SBDs) were fabricated by self-aligned process, and the effect of annealing of planar and recessed-anode AlGaN/GaN SBDs were investigated. The interface states of AlGaN/GaN SBD were treated by post anode annealing (PAA), which may be attributed to the reduction of metal-induced gap states (MIGS) at Schottky interface. The interface state density (<em>N</em><sub><em>SS</em></sub>) of planar and recessed-anode AlGaN/GaN SBDs are suppressed by PAA processes to 1.6 × 10<sup>13</sup> eV<sup>−1</sup>cm<sup>−2</sup> and 3.9 × 10<sup>14</sup> eV<sup>−1</sup>cm<sup>−2</sup>, respectively. It is found that after annealing of AlGaN/GaN SBDs, the SBDs stability is enhanced, the leakage current is reduced, the ideal factor is optimized, and the ON-resistance is reduced. The PAA process can effectively improve the performance of AlGaN/GaN SBDs, which is a key technology to optimize GaN SBDs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208038"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study utilizes a 532 nm ps laser micromachining technique on Schott-B270 glass to fabricate micro-lens array (MLA) with optimized curvature and minimal surface roughness, aimed at achieving an optical shaping diffuser. The research demonstrates a two-step fabrication process that combines picosecond laser processing with wet etching, significantly enhancing optical diffusion. Square-shaped micro-lenses with diffusion angles ranging from 29° to 62° were successfully created, along with hexagonal and rectangular shapes. Optical simulations using LightTools, which employed built-in Bezier curves to design micro-lens parameters, analyzed the impact of micro-lens arrangements on light patterns. The simulations indicated that varying the spacing and overlap ratio of the micro-lenses influenced light intensity distribution, achieving uniform light patterns with intensity variations of less than 10 %. Experimental validation through optical measurements confirmed that the fabricated MLA produced well-defined light patterns, demonstrating their effectiveness for various optical applications. This work contributes to advancing the understanding of micro-lens fabrication techniques and their applications in enhancing light distribution.
{"title":"Fabrication and simulation of optical shaping diffuser to control light patterns","authors":"Po-Wei Chiu , Tien-Li Chang , Wei-Chun Chen , Yeeu-Chang Lee","doi":"10.1016/j.micrna.2024.208030","DOIUrl":"10.1016/j.micrna.2024.208030","url":null,"abstract":"<div><div>This study utilizes a 532 nm ps laser micromachining technique on Schott-B270 glass to fabricate micro-lens array (MLA) with optimized curvature and minimal surface roughness, aimed at achieving an optical shaping diffuser. The research demonstrates a two-step fabrication process that combines picosecond laser processing with wet etching, significantly enhancing optical diffusion. Square-shaped micro-lenses with diffusion angles ranging from 29° to 62° were successfully created, along with hexagonal and rectangular shapes. Optical simulations using LightTools, which employed built-in Bezier curves to design micro-lens parameters, analyzed the impact of micro-lens arrangements on light patterns. The simulations indicated that varying the spacing and overlap ratio of the micro-lenses influenced light intensity distribution, achieving uniform light patterns with intensity variations of less than 10 %. Experimental validation through optical measurements confirmed that the fabricated MLA produced well-defined light patterns, demonstrating their effectiveness for various optical applications. This work contributes to advancing the understanding of micro-lens fabrication techniques and their applications in enhancing light distribution.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208030"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1016/j.micrna.2024.208056
Indira Chatterjee, Srinivasan R
This work combines three concepts, (i) reconfigurability, (ii) dual doped source-drain, and (iii) Ring FET to propose dual doped ring reconfigurable FET (D2R2FET). The proposed device concept has been demonstrated through DC and AC numerical device simulations. Its performance has been optimized by adjusting the source radius. Additionally, the device has also been studied for process variation impact using random forest algorithm. We have the following findings from the above studies, (i) source at the centre of structure offers better drive current compared to the drain at the centre structure, and (ii) Proposed device offers AC performance (unity gain cut-off frequency of 554Hz). Apart from these, the process variation study finds out the channel height (or epi-layer) and control gate work function as the most significant parameters.
{"title":"Dual doped ring reconfigurable FET and its process variation analysis using random forest algorithm","authors":"Indira Chatterjee, Srinivasan R","doi":"10.1016/j.micrna.2024.208056","DOIUrl":"10.1016/j.micrna.2024.208056","url":null,"abstract":"<div><div>This work combines three concepts, (i) reconfigurability, (ii) dual doped source-drain, and (iii) Ring FET to propose dual doped ring reconfigurable FET (D<sup>2</sup>R<sup>2</sup>FET). The proposed device concept has been demonstrated through DC and AC numerical device simulations. Its performance has been optimized by adjusting the source radius. Additionally, the device has also been studied for process variation impact using random forest algorithm. We have the following findings from the above studies, (i) source at the centre of structure offers better drive current compared to the drain at the centre structure, and (ii) Proposed device offers AC performance (unity gain cut-off frequency of 554Hz). Apart from these, the process variation study finds out the channel height (or epi-layer) and control gate work function as the most significant parameters.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208056"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1016/j.micrna.2024.208053
E. Luevano-Hipolito, D. Sánchez-Martínez, I. Juarez-Ramírez
Emerging contaminants are increasingly common in natural resources causing adverse health effects on humans, animals, and the environment. Thus, recently, a significant need for research to develop sustainable purification approaches to remove these pollutants from wastewater plants is required. Heterogenous photocatalysis represents a promising approach to remove traces of these pollutants from wastewater using semiconductor oxides. Some of the most promising materials for this purpose are g-C3N4 and BiVO4, which when combined in a heterojunction favor high efficiencies to remove water trace pollutants, e.g., pharmaceuticals. Therefore, this work proposes the optimization of the synthesis of the g-C3N4/BiVO4 heterojunction by microwave-hydrothermal method (MW-H) with an orthogonal L9 Taguchi design of experiments. During the synthesis, four factors were changed: load of BiVO4, power, temperature, and time of the MW-H method, to find the optimal conditions to obtain g-C3N4/BiVO4 heterojunctions with outstanding efficiencies to remove trace drugs of acetaminophen and tetracycline, contributing to proposes solutions for water purification. The g-C3N4/BiVO4 heterojunction promoted efficiencies to remove both drugs up to 74 % for acetaminophen and 87 % for tetracycline, confirming mineralization degree of 21 and 35 %, respectively. A mechanism for the decomposition of the organic molecules was proposed through the study of oxidant species.
{"title":"Pharmaceutical emerging pollutants photodegradation by the action of g-C3N4/BiVO4 heterojunctions","authors":"E. Luevano-Hipolito, D. Sánchez-Martínez, I. Juarez-Ramírez","doi":"10.1016/j.micrna.2024.208053","DOIUrl":"10.1016/j.micrna.2024.208053","url":null,"abstract":"<div><div>Emerging contaminants are increasingly common in natural resources causing adverse health effects on humans, animals, and the environment. Thus, recently, a significant need for research to develop sustainable purification approaches to remove these pollutants from wastewater plants is required. Heterogenous photocatalysis represents a promising approach to remove traces of these pollutants from wastewater using semiconductor oxides. Some of the most promising materials for this purpose are g-C<sub>3</sub>N<sub>4</sub> and BiVO<sub>4</sub>, which when combined in a heterojunction favor high efficiencies to remove water trace pollutants, e.g., pharmaceuticals. Therefore, this work proposes the optimization of the synthesis of the g-C<sub>3</sub>N<sub>4</sub>/BiVO<sub>4</sub> heterojunction by microwave-hydrothermal method (MW-H) with an orthogonal L<sub>9</sub> Taguchi design of experiments. During the synthesis, four factors were changed: load of BiVO<sub>4</sub>, power, temperature, and time of the MW-H method, to find the optimal conditions to obtain g-C<sub>3</sub>N<sub>4</sub>/BiVO<sub>4</sub> heterojunctions with outstanding efficiencies to remove trace drugs of acetaminophen and tetracycline, contributing to proposes solutions for water purification. The g-C<sub>3</sub>N<sub>4</sub>/BiVO<sub>4</sub> heterojunction promoted efficiencies to remove both drugs up to 74 % for acetaminophen and 87 % for tetracycline, confirming mineralization degree of 21 and 35 %, respectively. A mechanism for the decomposition of the organic molecules was proposed through the study of oxidant species.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208053"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1016/j.micrna.2024.208046
Dharavath Parvathi, P. Prithvi
{"title":"Corrigendum to ‘Innovative spacer material integration in tree-FETs for enhanced performance across variable channel lengths’ [Micro Nanostruct. 195 207974 (2024)]","authors":"Dharavath Parvathi, P. Prithvi","doi":"10.1016/j.micrna.2024.208046","DOIUrl":"10.1016/j.micrna.2024.208046","url":null,"abstract":"","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208046"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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