Micro and Nanostructures最新文献_第2页

Triple independently tunable sensing with multiple resonances based on metal-insulator-metal waveguide 基于金属-绝缘体-金属波导的三重独立可调多谐振传感技术

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-08 DOI: 10.1016/j.micrna.2024.208019

Yongpeng Ren, Desheng Qu, Yiping Sun, Fumeng Qin, Chunlei Li

In this study, a novel plasmonic refractive index sensor is proposed, featuring a metal–insulator–metal (MIM) waveguide coupled with a composite cavity structure consisting of a double-arc rectangle cavity, a bridge cavity and a three-half-ring configuration cavity. Finite element simulations are used to analyze the transmission characteristics and magnetic field distributions. The results show that six resonance peaks can be produced by three independent resonators. Moreover, there is a good linear relationship between these resonance wavelengths and the structural parameters of the resonators. Then, the refractive index sensing performances of the structure are analyzed by changing the refractive index of the medium within the resonator. The highest sensitivities of the peaks in their resonators are 1732, 2800 and 4568 nm/RIU, respectively. In addition, the proposed structure is tested for the simultaneous detection of the peanut oil concentration of three different blended oils: soybean-peanut, peanut-rapeseed and peanut-sunflower. The ability of the sensor to accurately and simultaneously measure these different oil mixtures highlights its potential for biochemical sensing.

本研究提出了一种新型等离子体折射率传感器，其特点是金属-绝缘体-金属（MIM）波导与由双弧形矩形腔、桥式腔和三半环配置腔组成的复合腔结构相耦合。有限元模拟用于分析传输特性和磁场分布。结果表明，三个独立的谐振器可以产生六个谐振峰。此外，这些谐振波长与谐振器的结构参数之间存在良好的线性关系。然后，通过改变谐振器内介质的折射率，分析了该结构的折射率传感性能。其谐振器中峰值的最高灵敏度分别为 1732、2800 和 4568 nm/RIU。此外，还测试了拟议结构对三种不同混合油（大豆-花生油、花生-菜籽油和花生-葵花籽油）花生油浓度的同时检测。该传感器能够准确地同时测量这些不同的油混合物，这凸显了它在生化传感方面的潜力。

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引用次数: 0

Novel power MOSFET with drain-side N–Si/N-SiGe heterojunctions for improving reverse recovery performance 采用漏极侧 N-Si/N-SiGe 异质结的新型功率 MOSFET，可提高反向恢复性能

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-07 DOI: 10.1016/j.micrna.2024.208018

Qisheng Yu, Jiaweiwen Huang, Zhigang Shen, Wensuo Chen

—A novel power MOSFET structure with Drain-side N–Si/N-SiGe Heterojunctions (DH-MOS) is proposed by introducing a N SiGe region which is sandwiched between the N-drift region and N+ substrate on the drain side. The operation mechanism and simulation verification of DH-MOS are presented. Due to the difference in valence band of N Si/N SiGe heterojunction, holes can be more easily expelled from the N-drift region into N SiGe region during the reverse conduction of DH-MOS, resulting in a significant reduction in hole density inside the N-drift region, thus improving the reverse recovery performance. Simulation results show that the reverse recovery charge (Qrr) of DH-MOS is 2.08 μC/cm², approximately 66.34 % lower than the 6.18 μC/cm² of conventional MOS. The introduction of new DH-MOS structure with N–Si/N-SiGe heterojunctions does not result in a significant increase in reverse conduction voltage (VF). In addition, it does not sacrifice any forward conduction and blocking characteristics. The proposed DH-MOS introduces changes on the drain side, unlike existing methods which focus on the source side or drift region. And it can be compatible with existing improving measures to further improve the reverse recovery performance.

-提出了一种新型功率 MOSFET 结构，该结构具有漏极侧 N-Si/N-SiGe 异质结（DH-MOS），通过在漏极侧 N 漂移区和 N+ 衬底之间夹入一个 N SiGe 区。本文介绍了 DH-MOS 的运行机制和仿真验证。由于 N Si/N SiGe 异质结的价带不同，在 DH-MOS 的反向传导过程中，空穴更容易从 N 漂移区排出到 N SiGe 区，导致 N 漂移区内的空穴密度显著降低，从而提高了反向恢复性能。仿真结果表明，DH-MOS 的反向恢复电荷 (Qrr) 为 2.08 μC/cm2，比传统 MOS 的 6.18 μC/cm2 低约 66.34%。采用 N-Si/N-SiGe 异质结的新型 DH-MOS 结构不会导致反向传导电压（VF）显著增加。此外，它也不会牺牲任何正向传导和阻塞特性。所提出的 DH-MOS 在漏极侧引入了变化，而不像现有的方法侧重于源极侧或漂移区。它可以与现有的改进措施兼容，进一步提高反向恢复性能。

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引用次数: 0

TCAD simulation on an UACCUFET inserted with 3C/4H–SiC hetero-crystalline junctions for accumulation-channel and fly-back 对插入了 3C/4H-SiC 异质结的 UACCUFET 进行 TCAD 仿真，用于积放沟道和飞返电路

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-06 DOI: 10.1016/j.micrna.2024.208017

Jingyang Ding, Wensheng Wei, Jianbing Ji

Due to high channel mobility, SiC accumulation-channel field-effect transistors (ACCUFETs) exhibit important research and application values in high-frequency and large-power fields, but still encounter poor reverse recovery, etc. An enhancement-mode U-shaped gate ACCUFET integrated with 3C/4H–SiC hetero-crystalline junctions (HCJs) and semi-super-junction (SSJ) is constructed, where a (n⁻)4H–SiC-layer in (n)3C–SiC/(n⁻)4H–SiC HCJ is adopted to form accumulation-channel for conduction due to field-effect, another HCJ composed of (n)3C–SiC and (n)4H–SiC drift region is employed for fly-back under low cut-in voltage (V_F) to shorten reverse recovery time (t_rr). Additionally, a SSJ is used to raise the breakdown voltage (V_B). The device structure and performance are optimized by the Silvaco TCAD, which illustrates the values of V_B and static figure of merit (FOM_HM) are increased by 15.6 % and 5.6 % respectively compared to those of the counterpart with Schottky barrier diode. This paper can provide new ideas for devising high-performance ACCUFETs.

由于具有高沟道迁移率，SiC 积层沟道场效应晶体管（ACCUFET）在高频和大功率领域具有重要的研究和应用价值，但仍存在反向恢复能力差等问题。本研究构建了一种集成了 3C/4H-SiC 异质结（HCJ）和半超级结（SSJ）的增强型 U 型栅 ACCUFET，其中在(n)3C-SiC/(n)4H-SiC HCJ 中采用了(n-)4H-SiC 层，以形成场效应导通的累积沟道、另一个由(n)3C-SiC和(n)4H-SiC漂移区组成的HCJ用于在低切入电压（VF）下进行飞返，以缩短反向恢复时间（trr）。此外，还使用了 SSJ 来提高击穿电压 (VB)。通过 Silvaco TCAD 对该器件的结构和性能进行了优化，结果表明，与采用肖特基势垒二极管的器件相比，VB 值和静态优越性（FOMHM）分别提高了 15.6% 和 5.6%。本文为设计高性能 ACCUFET 提供了新思路。

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引用次数: 0

Study and analysis of a dielectric-modulated vertical tunnel FET biosensor using dual material gate 使用双材料栅极的介电调制垂直隧道场效应晶体管生物传感器的研究与分析

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-02 DOI: 10.1016/j.micrna.2024.208016

Haiwu Xie , Yankun Wang , Yongbo Liao

A bimetal gate heterogeneous dielectric vertical tunnel field-effect transistor (BG-HD-VTFET) biosensor has been investigated in this paper for the first time using engineered-gate concept, where nanogaps are introduced under tunnel gate (TG) to detect biomolecules near the device surface. To improve the detection performance of BG-HD-VTFET, an overlap is designed between source and pocket region, and the sensing ability of BG-HD-VTFET with and without overlap is compared in details. Further, an auxiliary gate (AG) is added for the proposed two devices to optimize the electrical characteristics, and the y composition of GaAs_ySb_1-y in pocket region is optimized to enhance ON-state current, and then different neutral and charged biomolecules are considered to simulate device-level gate effects. In addition, the influence of different dielectric constant at fixed charge density is studied and the length of overlap is optimized. Simulation results show that the maximum sensitivity of BG-HD-VTFET with and without overlap can reach 3.3 × 10³ and 1.9 × 10³, respectively.

本文首次采用工程栅极概念研究了一种双金属栅极异质介质垂直隧道场效应晶体管（BG-HD-VTFET）生物传感器，在隧道栅极（TG）下引入纳米间隙以检测器件表面附近的生物分子。为了提高 BG-HD-VTFET 的检测性能，在源区和口袋区之间设计了一个重叠区，并详细比较了有重叠区和无重叠区 BG-HD-VTFET 的传感能力。此外，还为所提出的两个器件增加了一个辅助栅极（AG）以优化电气特性，并优化了口袋区 GaAsySb1-y 的 y 成分以增强导通电流，然后考虑了不同的中性和带电生物分子以模拟器件级栅极效应。此外，还研究了固定电荷密度下不同介电常数的影响，并优化了重叠长度。模拟结果表明，有重叠和无重叠的 BG-HD-VTFET 的最大灵敏度分别可达 3.3 × 103 和 1.9 × 103。

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引用次数: 0

Enhancing the performance of Ga2O3 FinFETs through double fin channels and buried oxide 通过双鳍片沟道和埋入氧化物提高 Ga2O3 FinFET 的性能

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-01 DOI: 10.1016/j.micrna.2024.208014

Priyanshi Goyal, Harsupreet Kaur

In this study, double fin channels and buried oxide has been implemented on Ga₂O₃ FinFET. Exhaustive simulations have been performed to study the performance of the proposed device and its comparison has been drawn with the device with only double fin channels without buried oxide, and the conventional FinFET. Various device characteristics such as output and transfer characteristics etc., have been studied and several figure of merits (FoMs) such as transconductance, parasitic capacitances, gain bandwidth product, intrinsic delay etc., have also been obtained. Further, the inverter has been designed using all the devices under consideration. It has been demonstrated that the inverter using the proposed device exhibits excellent characteristics in terms of significant improvement in key metrics such as noise margin, transient response etc., as compared to the inverter using conventional devices. The current study also lays the groundwork for designing various high-performance circuits for ultra-high frequency applications.

本研究在 Ga2O3 FinFET 上实现了双鳍片沟道和埋入氧化物。研究人员进行了详尽的仿真，研究了所提器件的性能，并将其与仅有双鳍片沟道而没有埋入氧化物的器件和传统的 FinFET 进行了比较。此外，还研究了各种器件特性，如输出和传输特性等，并获得了一些优点（FoMs），如跨导、寄生电容、增益带宽乘积、本征延迟等。此外，逆变器的设计采用了所有考虑的器件。结果表明，与使用传统器件的逆变器相比，使用拟议器件的逆变器在噪声裕度、瞬态响应等关键指标上都有显著改善，表现出卓越的特性。目前的研究还为设计超高频应用的各种高性能电路奠定了基础。

引用次数: 0

Two-dimensional Sc2O3 monolayer with tunable ultrawide bandgap for solar-blind ultraviolet photodetector 具有可调超宽带隙的二维 Sc2O3 单层，用于日光盲紫外线光电探测器

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-10-31 DOI: 10.1016/j.micrna.2024.208012

Bo Meng , Wen-Zhi Xiao

A novel 2D scandia (Sc₂O₃) monolayer was identified using an evolutionary algorithm-based crystal structure prediction method. The Sc₂O₃ monolayer exhibits a

P \overline{3} m 1

symmetry and excellent energetic, thermal, dynamical, and mechanical stability, as well as good mechanical flexibility. The monolayer possesses an ultrawide indirect band gap of 6.246 eV. The monolayer is transparent in the visible light zone, while the large exciton effect leads to significant absorption in the solar-blind and vacuum ultraviolet regions. The band gap of this monolayer can be reduced monotonically by external biaxial tensile strain, resulting in the absorption spectrum covering the entire solar blind spectral region when the load reaches 5.0 %. Additionally, the monolayer has an ultra-high in-plane dielectric constant of approximately 50. The superior stability, flexibility, and strain-tunable electronic and optical properties, as well as the ultra-high dielectric constant, suggest its potential application in a solar-blind photodetector in harsh environments.

利用基于进化算法的晶体结构预测方法，发现了一种新型二维钪（Sc2O3）单层。Sc2O3单层具有P3‾m1对称性，具有优异的能量、热、动力学和机械稳定性，以及良好的机械柔韧性。该单层具有 6.246 eV 的超宽间接带隙。该单层在可见光区是透明的，而巨大的激子效应导致其在日盲区和真空紫外区有显著的吸收。外部双轴拉伸应变可单调地减小该单层的带隙，当负载达到 5.0 % 时，吸收光谱会覆盖整个日盲区。此外，该单层具有约 50 的超高面内介电常数。卓越的稳定性、柔韧性、应变可调的电子和光学特性以及超高介电常数表明，它有望应用于恶劣环境下的日盲光电探测器。

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引用次数: 0

Effects of random ferroelectric and dielectric phase distributions on junctionless ferroelectric field effect transistors 随机铁电和介电相分布对无结铁电场效应晶体管的影响

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-10-30 DOI: 10.1016/j.micrna.2024.207997

Honglei Huo, Weifeng Lü, Yubin Wang, Shuaiwei Zhao, Xinfeng Zheng

In this study, we comprehensively investigated the effects of random ferroelectric (FE) and dielectric (DE) phase distributions on junctionless ferroelectric field-effect transistors (JL-FeFETs). The Poisson–Voronoi tessellation (PVT) algorithm, which corresponds to the physical growth mechanism, was used to obtain grain nucleation in the ferroelectric layer. The simulation results demonstrated that as the probability of FE phase decreased from 80% to 40%, the standard deviation of the memory window (

σ_{MW}

) increased from 62.4 to 99.5 mV, and the possibility of forming a blocking current path from the source to the drain increased, which degraded the memory window (MW). The simulation results indicated that decreasing the gate length and width increased device variations. Furthermore,

σ_{MW}

decreased from 84.5 to 58.9 mV as the grain size decreased from 5 to 3 nm.

在这项研究中，我们全面研究了随机铁电（FE）和介电（DE）相分布对无结铁电场效应晶体管（JL-FeFET）的影响。模拟中使用了泊松-沃罗诺网格划分（PVT）算法来获得铁电层中的晶粒成核情况，该算法与物理生长机制相对应。仿真结果表明，随着铁电相概率从 80% 下降到 40%，存储器窗口的标准偏差（σMW）从 62.4 mV 增加到 99.5 mV，从源极到漏极形成阻塞电流路径的可能性增加，从而降低了存储器窗口（MW）。模拟结果表明，减少栅极长度和宽度会增加器件的变化。此外，当晶粒尺寸从 5 纳米减小到 3 纳米时，σMW 从 84.5 mV 降至 58.9 mV。

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引用次数: 0

Electronic States and transmission in GaAs/GaAlAs multi-quantum wells with geometrical defects 具有几何缺陷的砷化镓/砷化镓多量子阱中的电子状态和传输

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-10-30 DOI: 10.1016/j.micrna.2024.208002

F.Z. Elamri, A. Baidri, F. Falyouni, D. Bria

In this paper, we use the Green’s function approach to conduct the theoretical study of the propagation of electron waves in a multi-quantum wells (MQWs) made up of GaAs and GaAlAs layers with a periodic structure. Localized electronic states are produced inside the band gaps due to the presence of defects of various types inside the MQWs. These states are extremely sensitive to the thicknesses and the position of the different inserted defect layers. The transmission rate of these states is always at its highest as the number of defects rises. Similar to this, we found that the transmission rates of these defect layers decrease the further apart they are. Thus, when the defect position is separated by more than two cells, this kind of interaction is stronger; however, when they are brought closer, it is weaker. Due to the energy transfer between the various electronic states created inside the band gaps, the origin of the states induced by the wells defect becomes a state induced by the barrier defect, and vice versa. This causes a change on the behavior of the induced electronic localized states.

本文采用格林函数方法对电子波在具有周期性结构的砷化镓和砷化镓层组成的多量子阱（MQWs）中的传播进行了理论研究。由于 MQWs 内部存在各种类型的缺陷，带隙内会产生局部电子态。这些态对不同插入缺陷层的厚度和位置极为敏感。这些态的传输率总是随着缺陷数量的增加而达到最高。与此类似，我们发现这些缺陷层之间的距离越远，传输率就越低。因此，当缺陷位置相隔两个单元以上时，这种相互作用会更强；但当它们靠得更近时，这种相互作用就会减弱。由于在带隙内产生的各种电子状态之间的能量转移，井缺陷诱导的状态起源变成了势垒缺陷诱导的状态，反之亦然。这导致诱导电子局部态的行为发生变化。

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引用次数: 0

Study of A Heterojunction Double Gate Ferroelectric p-n-i-n Tunnel FET combining analytical modeling and TCAD simulation 结合分析建模和 TCAD 仿真研究异质结双栅极铁电 p-ni-i-n 隧道场效应晶体管

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-10-29 DOI: 10.1016/j.micrna.2024.208003

Shib Sankar Das , Sudipta Ghosh , Subir Kumar Sarkar

A short channel Heterojunction Double Gate Ferroelectric p-n-i-n Tunnel Field Effect Transistor structure is proposed in this article to alleviate undesirable ambipolarity and Miller Capacitance and has a steeper subthreshold swing with improvement in ON state current compared to other conventional TFET structures. This work develops a physics based relevant analytical model of surface potential with the effect of gate fringing field and inclusive source and channel depletion region, drain current model, terminal charge and capacitance model to investigate its transient performance for the impact of ferroelectric polarization according to the Miller Ferroelectric polarization model. The proposed device is also validated using the SILVACO ATLAS device simulator, which yields a good agreement with the model, establishing its reliability and acceptability. The device achieves a steeper subthreshold of 31.3 mV/decade, an improved ON current

\sim

5.9 x 10⁻⁴ A/

μ m

and enhanced transconductance

\sim

0.105 ms as well as a very low energy delay product (EDP)

\sim

4.07 x 10⁻³ Js with hysteresis free operation at a low supply voltage

\sim

0.5 V in a 40 nm technology node, making it desirable for ultra-low power analog and logic applications.

本文提出了一种短沟道异质结双栅极铁电 p-ni-i-n 隧道场效应晶体管结构，以减轻不良的伏极性和米勒电容，与其他传统 TFET 结构相比，它具有更陡峭的阈下摆动，导通状态电流也有所改善。这项工作开发了一个基于物理学的相关表面电势分析模型，其中包含栅极边缘场的影响、源极和沟道耗尽区、漏极电流模型、终端电荷和电容模型，以根据米勒铁电极化模型研究铁电极化影响的瞬态性能。此外，还使用 SILVACO ATLAS 器件模拟器对所提出的器件进行了验证，结果与模型十分吻合，从而确定了器件的可靠性和可接受性。该器件实现了 31.3 mV/decade 的陡峭次阈值、5.9 x 10-4 A/ μm 的改进导通电流、0.105 ms 的增强跨导以及 4.07 x 10-3 Js 的超低能量延迟积（EDP），并能在 40 nm 技术节点、0.5 V 的低电源电压下无滞后地工作，因此非常适合超低功耗模拟和逻辑应用。

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引用次数: 0

Evaluation of sensitivity in a vertically misaligned double-gate electrolyte-insulator-semiconductor extended source tunnel FET as pH sensor 评估作为 pH 传感器的垂直错位双栅电解质-绝缘体-半导体扩展源隧道场效应晶体管的灵敏度

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-10-29 DOI: 10.1016/j.micrna.2024.208005

Mohd Haroon Khan , Mohamed Fauzi Packeer Mohamed , Muhammad Firdaus Akbar , Girish Wadhwa , Prashant Mani

In this research, the primary objective is to investigate the impact of vertical gate misalignment on the source and drain regions of 30 nm. The double-gate Electrolyte-Insulated-Semiconductor extended-source Tunnel Field-Effect Transistor (ES-VTFET) is proposed for its potential application as a pH sensor. The gate electrode cannot be perfectly aligned with the channel due to fabrication tolerances, particularly in very short-channel structures. This study aims to introduce a vertical electrolyte Bio-TFET-based pH sensor capable of detecting pH changes in aqueous (electrolyte) solutions. The effect of variation in pH values on the electrical characteristics of the device such as drain current (

I_{D S}

), transconductance (

g_{m}

), voltage sensitivity (

S_{V}

) and current sensitivity (

S_{I}

) have been examined. It has been assumed that the electrolyte section is an intrinsic semiconductor material where electrons and holes signify mobile ions in aqueous solutions. The electrolyte region has an electrolyte dielectric constant of 78, an energy bandgap of 1.12 eV, and an electron affinity of 1.32 eV. Finally, the gate misalignment aspect of the proposed bio TFET-based pH sensor is emphasized by comparing sensitivity parameters. Hence, the proposed pH sensor can be used as a potential candidate for the futuristic application of biosensors.

这项研究的主要目的是调查垂直栅极错位对 30 纳米源极和漏极区域的影响。由于双栅极电解质绝缘半导体扩展源极隧道场效应晶体管 (ES-VTFET) 有可能应用于 pH 传感器，因此提出了这种晶体管。由于制造公差的原因，栅电极无法与沟道完全对齐，特别是在非常短的沟道结构中。本研究旨在介绍一种基于垂直电解质 Bio-TFET 的 pH 传感器，它能够检测水（电解质）溶液中的 pH 值变化。研究考察了 pH 值变化对漏极电流 (IDS)、跨导 (gm)、电压灵敏度 (SV) 和电流灵敏度 (SI) 等器件电气特性的影响。假设电解质部分是一种本征半导体材料，电子和空穴代表水溶液中的移动离子。电解质区域的电解质介电常数为 78，能带隙为 1.12 eV，电子亲和力为 1.32 eV。最后，通过比较灵敏度参数，强调了所提出的基于生物 TFET 的 pH 传感器的栅极错位问题。因此，所提出的 pH 传感器可作为未来生物传感器应用的潜在候选器件。

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引用次数: 0