Micro and Nanostructures最新文献_第10页

Research on controllable processing technology of microsphere cavity inside silicon substrates utilizing thermoelectric coupling effect 利用热电耦合效应的硅衬底内微球腔可控加工技术研究

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-13 DOI: 10.1016/j.micrna.2024.208022

Linan Zhang, Haiping Liu, Tongzhou Shen, Liqun Wu, Hongcheng Wang, Hongying Liu

Micro cavity structures are extensively utilized in semiconductor micro- and nanosensor devices, especially spherical microcavity, whose high Q value not only significantly improves the sensitivity of the sensors, but also enhances their reliability in complex environments. The integration of this structure not only optimizes the performance of the sensor, but also provides the possibility for high-precision detection. In this study, a thermoelectric coupling method for controllable migration of microsphere cavity inside silicon materials is proposed in order to achieve stable formation of the internal microsphere cavity structure. The directional migration mechanism of atoms on the surface of microsphere cavities in silicon substrates under an electric field is explored using a phase field model. The model indicates that changes in the total free energy density induce a solid-gas phase transition on the surface of the microsphere cavity. It is shown that the migration velocity of the microsphere cavity increases proportionally with the electric field strength, and the migration distance increases by approximately 9 % for every 10 % increase in electric field strength. The migration direction aligns with the direction of the electric field. Simulation results validate the theoretical accuracy, the feasibility of controllable migration by thermoelectric coupling effect in conductive materials through experimental studies. This study provides novel methods and insights for fabricating high-quality spherical cavity in silicon materials and preparing highly sensitive micro- and nanosensor devices.

微腔结构被广泛应用于半导体微型和纳米传感器设备中，尤其是球形微腔，其高 Q 值不仅能显著提高传感器的灵敏度，还能增强其在复杂环境中的可靠性。这种结构的集成不仅优化了传感器的性能，还为高精度检测提供了可能。本研究提出了一种硅材料内部微球腔可控迁移的热电耦合方法，以实现内部微球腔结构的稳定形成。利用相场模型探讨了硅衬底微球空腔表面原子在电场作用下的定向迁移机制。该模型表明，总自由能密度的变化会引起微球空腔表面的固气相变。研究表明，微球空腔的迁移速度与电场强度成比例增加，电场强度每增加 10%，迁移距离大约增加 9%。迁移方向与电场方向一致。模拟结果验证了理论的准确性，并通过实验研究证明了在导电材料中利用热电耦合效应实现可控迁移的可行性。这项研究为在硅材料中制造高质量球形空腔和制备高灵敏度微纳米传感器件提供了新方法和新见解。

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引用次数: 0

Comprehensive study of Tolanene's mechanical properties: Effects of temperature, layering, orientation, and defects 对甲苯机械性能的全面研究：温度、分层、取向和缺陷的影响

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-12 DOI: 10.1016/j.micrna.2024.208020

Wenting Yang , Li-Cai Zhao

This study explores the mechanical properties of both single-layered and multi-layered tolanene nanosheets via molecular dynamics (MD) simulations. The effects of critical parameters such as size, temperature, and defects on the mechanical behavior of armchair and zigzag configurations of single-layer Tolanene nanosheets are analyzed. Key mechanical properties, including Young's modulus, ultimate stress, fracture stress, and fracture strain, are evaluated based on the stress-strain curve. It is observed that the zigzag configuration exhibits a higher Young's modulus compared to the armchair configuration. However, the armchair structure shows greater ultimate stress than the zigzag configuration. An increase in temperature or the introduction of vacancy defects leads to a degradation of mechanical properties in both configurations. The sensitivity of Young's modulus to temperature is more pronounced in the zigzag configuration than in the armchair, even though the armchair configuration generally has a higher Young's modulus. Additionally, increasing the number of layers in the nanosheets results in an enhancement of Young's modulus, with the armchair configuration showing more significant improvement than the zigzag configuration. The variation in Young's modulus with increasing layers is minimal for the zigzag configuration.

本研究通过分子动力学（MD）模拟探讨了单层和多层甲苯纳米片的力学性能。研究分析了尺寸、温度和缺陷等关键参数对单层托拉烯纳米片的扶手和之字形构型的力学行为的影响。根据应力-应变曲线评估了关键力学性能，包括杨氏模量、极限应力、断裂应力和断裂应变。结果表明，与扶手结构相比，人字形结构具有更高的杨氏模量。然而，"之 "字形结构比 "之 "字形结构显示出更大的极限应力。温度升高或引入空位缺陷会导致两种构型的机械性能下降。杨氏模量对温度的敏感性在人字形结构中比在扶手椅结构中更为明显，尽管扶手椅结构的杨氏模量通常更高。此外，增加纳米片的层数也会提高杨氏模量，而扶手椅构型比之字形构型的改善更为显著。人字形结构的杨氏模量随层数增加而变化很小。

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引用次数: 0

Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET 源极（漏极）掺杂剖面和沟道掺杂水平对 FinFET 自热效应的影响

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-09 DOI: 10.1016/j.micrna.2024.208015

Atabek E. Atamuratov , Bahor O. Jabbarova , Makhkam M. Khalilloev , Dilshod R. Rajapov , Ahmed Yusupov , Jean Chamberlain Chedjou , Gurdial Blugan , Kamoladdin Saidov

In this work the impact of the doping profile in the source and drain areas on the self-heating effect in SOI FinFET is simulated at different doping levels in the channel. Constant profile as well as two types of analytical profiles are considered. The impact of the doping profile on the threshold voltage and on the ratio I_on/I_off at different doping levels of the channel is also considered. To consider the self-heating effect the thermodynamic transport model in TCAD Sentaurus software is used for simulation. The results of simulation show that self-heating effect, threshold voltage, and Ion/Ioff ratio considerably depend on the doping profile in source and drain areas.

在这项研究中，我们模拟了在沟道中不同掺杂水平下，源极和漏极区域的掺杂曲线对 SOI FinFET 自热效应的影响。考虑了恒定剖面和两种分析剖面。此外，还考虑了在沟道不同掺杂水平下，掺杂曲线对阈值电压和离子/离子关比例的影响。为了考虑自热效应，使用了 TCAD Sentaurus 软件中的热力学传输模型进行模拟。仿真结果表明，自热效应、阈值电压和 Ion/Ioff 比率在很大程度上取决于源极和漏极区域的掺杂情况。

引用次数: 0

Linearity analysis of FE-based graded channel junctionless FET obtaining negative capacitance for low power applications 基于 FE 的渐变沟道无结 FET 线性分析，为低功耗应用获取负电容

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-08 DOI: 10.1016/j.micrna.2024.208013

Ankush Chattopadhyay

This paper reports ferroelectric (FE) oxide based graded-channel junctionless FET featuring the negative capacitance effects in nano-scale regime. The linearity nature of its response is analyzed on the basis of third order interception point (

P_{I P 3}

), harmonic interception voltages of 2nd and 3rd orders (

V I P_{2}

,

V I P_{3}

) and intermodulation distortion (

I M D_{3}

). Influence of fundamental device’s parameters such as, gate and underlap length, ferroelectric oxide thickness, graded channel doping and operating temperature on its linear behavior is observed and analyzed in detail. The subthreshold slope is also found to go below 60mV/dec for optimum features, obtaining the NC characteristics. In its circuit application part, a cascode amplifier is designed using the proposed device showing variations due to the change in the proposed device dimensions. The proposed device is designed and simulated using Silvaco ATLAS device simulator, which is calibrated with the available experimental results. Therefore, the present study is quite relevant in recent days for low power analog applications.

本文介绍了基于铁电（FE）氧化物的分级沟道无结场效应晶体管，其特点是在纳米尺度下具有负电容效应。根据三阶截获点（PIP3）、二阶和三阶谐波截获电压（VIP2、VIP3）以及互调失真（IMD3）分析了其响应的线性性质。我们观察并详细分析了栅极和下隙长度、铁电氧化物厚度、分级沟道掺杂和工作温度等基本器件参数对其线性行为的影响。此外，还发现阈下斜率在 60mV/dec 以下为最佳特性，从而获得了数控特性。在其电路应用部分，使用所提出的器件设计了一个级联放大器，显示了因所提出的器件尺寸变化而产生的变化。该器件是利用 Silvaco ATLAS 器件模拟器设计和模拟的，并根据现有的实验结果进行了校准。因此，本研究与近期的低功耗模拟应用相当相关。

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引用次数: 0

Triple independently tunable sensing with multiple resonances based on metal-insulator-metal waveguide 基于金属-绝缘体-金属波导的三重独立可调多谐振传感技术

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-08 DOI: 10.1016/j.micrna.2024.208019

Yongpeng Ren, Desheng Qu, Yiping Sun, Fumeng Qin, Chunlei Li

In this study, a novel plasmonic refractive index sensor is proposed, featuring a metal–insulator–metal (MIM) waveguide coupled with a composite cavity structure consisting of a double-arc rectangle cavity, a bridge cavity and a three-half-ring configuration cavity. Finite element simulations are used to analyze the transmission characteristics and magnetic field distributions. The results show that six resonance peaks can be produced by three independent resonators. Moreover, there is a good linear relationship between these resonance wavelengths and the structural parameters of the resonators. Then, the refractive index sensing performances of the structure are analyzed by changing the refractive index of the medium within the resonator. The highest sensitivities of the peaks in their resonators are 1732, 2800 and 4568 nm/RIU, respectively. In addition, the proposed structure is tested for the simultaneous detection of the peanut oil concentration of three different blended oils: soybean-peanut, peanut-rapeseed and peanut-sunflower. The ability of the sensor to accurately and simultaneously measure these different oil mixtures highlights its potential for biochemical sensing.

本研究提出了一种新型等离子体折射率传感器，其特点是金属-绝缘体-金属（MIM）波导与由双弧形矩形腔、桥式腔和三半环配置腔组成的复合腔结构相耦合。有限元模拟用于分析传输特性和磁场分布。结果表明，三个独立的谐振器可以产生六个谐振峰。此外，这些谐振波长与谐振器的结构参数之间存在良好的线性关系。然后，通过改变谐振器内介质的折射率，分析了该结构的折射率传感性能。其谐振器中峰值的最高灵敏度分别为 1732、2800 和 4568 nm/RIU。此外，还测试了拟议结构对三种不同混合油（大豆-花生油、花生-菜籽油和花生-葵花籽油）花生油浓度的同时检测。该传感器能够准确地同时测量这些不同的油混合物，这凸显了它在生化传感方面的潜力。

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引用次数: 0

Novel power MOSFET with drain-side N–Si/N-SiGe heterojunctions for improving reverse recovery performance 采用漏极侧 N-Si/N-SiGe 异质结的新型功率 MOSFET，可提高反向恢复性能

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-07 DOI: 10.1016/j.micrna.2024.208018

Qisheng Yu, Jiaweiwen Huang, Zhigang Shen, Wensuo Chen

—A novel power MOSFET structure with Drain-side N–Si/N-SiGe Heterojunctions (DH-MOS) is proposed by introducing a N SiGe region which is sandwiched between the N-drift region and N+ substrate on the drain side. The operation mechanism and simulation verification of DH-MOS are presented. Due to the difference in valence band of N Si/N SiGe heterojunction, holes can be more easily expelled from the N-drift region into N SiGe region during the reverse conduction of DH-MOS, resulting in a significant reduction in hole density inside the N-drift region, thus improving the reverse recovery performance. Simulation results show that the reverse recovery charge (Qrr) of DH-MOS is 2.08 μC/cm², approximately 66.34 % lower than the 6.18 μC/cm² of conventional MOS. The introduction of new DH-MOS structure with N–Si/N-SiGe heterojunctions does not result in a significant increase in reverse conduction voltage (VF). In addition, it does not sacrifice any forward conduction and blocking characteristics. The proposed DH-MOS introduces changes on the drain side, unlike existing methods which focus on the source side or drift region. And it can be compatible with existing improving measures to further improve the reverse recovery performance.

-提出了一种新型功率 MOSFET 结构，该结构具有漏极侧 N-Si/N-SiGe 异质结（DH-MOS），通过在漏极侧 N 漂移区和 N+ 衬底之间夹入一个 N SiGe 区。本文介绍了 DH-MOS 的运行机制和仿真验证。由于 N Si/N SiGe 异质结的价带不同，在 DH-MOS 的反向传导过程中，空穴更容易从 N 漂移区排出到 N SiGe 区，导致 N 漂移区内的空穴密度显著降低，从而提高了反向恢复性能。仿真结果表明，DH-MOS 的反向恢复电荷 (Qrr) 为 2.08 μC/cm2，比传统 MOS 的 6.18 μC/cm2 低约 66.34%。采用 N-Si/N-SiGe 异质结的新型 DH-MOS 结构不会导致反向传导电压（VF）显著增加。此外，它也不会牺牲任何正向传导和阻塞特性。所提出的 DH-MOS 在漏极侧引入了变化，而不像现有的方法侧重于源极侧或漂移区。它可以与现有的改进措施兼容，进一步提高反向恢复性能。

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引用次数: 0

TCAD simulation on an UACCUFET inserted with 3C/4H–SiC hetero-crystalline junctions for accumulation-channel and fly-back 对插入了 3C/4H-SiC 异质结的 UACCUFET 进行 TCAD 仿真，用于积放沟道和飞返电路

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-06 DOI: 10.1016/j.micrna.2024.208017

Jingyang Ding, Wensheng Wei, Jianbing Ji

Due to high channel mobility, SiC accumulation-channel field-effect transistors (ACCUFETs) exhibit important research and application values in high-frequency and large-power fields, but still encounter poor reverse recovery, etc. An enhancement-mode U-shaped gate ACCUFET integrated with 3C/4H–SiC hetero-crystalline junctions (HCJs) and semi-super-junction (SSJ) is constructed, where a (n⁻)4H–SiC-layer in (n)3C–SiC/(n⁻)4H–SiC HCJ is adopted to form accumulation-channel for conduction due to field-effect, another HCJ composed of (n)3C–SiC and (n)4H–SiC drift region is employed for fly-back under low cut-in voltage (V_F) to shorten reverse recovery time (t_rr). Additionally, a SSJ is used to raise the breakdown voltage (V_B). The device structure and performance are optimized by the Silvaco TCAD, which illustrates the values of V_B and static figure of merit (FOM_HM) are increased by 15.6 % and 5.6 % respectively compared to those of the counterpart with Schottky barrier diode. This paper can provide new ideas for devising high-performance ACCUFETs.

由于具有高沟道迁移率，SiC 积层沟道场效应晶体管（ACCUFET）在高频和大功率领域具有重要的研究和应用价值，但仍存在反向恢复能力差等问题。本研究构建了一种集成了 3C/4H-SiC 异质结（HCJ）和半超级结（SSJ）的增强型 U 型栅 ACCUFET，其中在(n)3C-SiC/(n)4H-SiC HCJ 中采用了(n-)4H-SiC 层，以形成场效应导通的累积沟道、另一个由(n)3C-SiC和(n)4H-SiC漂移区组成的HCJ用于在低切入电压（VF）下进行飞返，以缩短反向恢复时间（trr）。此外，还使用了 SSJ 来提高击穿电压 (VB)。通过 Silvaco TCAD 对该器件的结构和性能进行了优化，结果表明，与采用肖特基势垒二极管的器件相比，VB 值和静态优越性（FOMHM）分别提高了 15.6% 和 5.6%。本文为设计高性能 ACCUFET 提供了新思路。

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引用次数: 0

Study and analysis of a dielectric-modulated vertical tunnel FET biosensor using dual material gate 使用双材料栅极的介电调制垂直隧道场效应晶体管生物传感器的研究与分析

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-02 DOI: 10.1016/j.micrna.2024.208016

Haiwu Xie , Yankun Wang , Yongbo Liao

A bimetal gate heterogeneous dielectric vertical tunnel field-effect transistor (BG-HD-VTFET) biosensor has been investigated in this paper for the first time using engineered-gate concept, where nanogaps are introduced under tunnel gate (TG) to detect biomolecules near the device surface. To improve the detection performance of BG-HD-VTFET, an overlap is designed between source and pocket region, and the sensing ability of BG-HD-VTFET with and without overlap is compared in details. Further, an auxiliary gate (AG) is added for the proposed two devices to optimize the electrical characteristics, and the y composition of GaAs_ySb_1-y in pocket region is optimized to enhance ON-state current, and then different neutral and charged biomolecules are considered to simulate device-level gate effects. In addition, the influence of different dielectric constant at fixed charge density is studied and the length of overlap is optimized. Simulation results show that the maximum sensitivity of BG-HD-VTFET with and without overlap can reach 3.3 × 10³ and 1.9 × 10³, respectively.

本文首次采用工程栅极概念研究了一种双金属栅极异质介质垂直隧道场效应晶体管（BG-HD-VTFET）生物传感器，在隧道栅极（TG）下引入纳米间隙以检测器件表面附近的生物分子。为了提高 BG-HD-VTFET 的检测性能，在源区和口袋区之间设计了一个重叠区，并详细比较了有重叠区和无重叠区 BG-HD-VTFET 的传感能力。此外，还为所提出的两个器件增加了一个辅助栅极（AG）以优化电气特性，并优化了口袋区 GaAsySb1-y 的 y 成分以增强导通电流，然后考虑了不同的中性和带电生物分子以模拟器件级栅极效应。此外，还研究了固定电荷密度下不同介电常数的影响，并优化了重叠长度。模拟结果表明，有重叠和无重叠的 BG-HD-VTFET 的最大灵敏度分别可达 3.3 × 103 和 1.9 × 103。

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引用次数: 0

Enhancing the performance of Ga2O3 FinFETs through double fin channels and buried oxide 通过双鳍片沟道和埋入氧化物提高 Ga2O3 FinFET 的性能

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-11-01 DOI: 10.1016/j.micrna.2024.208014

Priyanshi Goyal, Harsupreet Kaur

In this study, double fin channels and buried oxide has been implemented on Ga₂O₃ FinFET. Exhaustive simulations have been performed to study the performance of the proposed device and its comparison has been drawn with the device with only double fin channels without buried oxide, and the conventional FinFET. Various device characteristics such as output and transfer characteristics etc., have been studied and several figure of merits (FoMs) such as transconductance, parasitic capacitances, gain bandwidth product, intrinsic delay etc., have also been obtained. Further, the inverter has been designed using all the devices under consideration. It has been demonstrated that the inverter using the proposed device exhibits excellent characteristics in terms of significant improvement in key metrics such as noise margin, transient response etc., as compared to the inverter using conventional devices. The current study also lays the groundwork for designing various high-performance circuits for ultra-high frequency applications.

本研究在 Ga2O3 FinFET 上实现了双鳍片沟道和埋入氧化物。研究人员进行了详尽的仿真，研究了所提器件的性能，并将其与仅有双鳍片沟道而没有埋入氧化物的器件和传统的 FinFET 进行了比较。此外，还研究了各种器件特性，如输出和传输特性等，并获得了一些优点（FoMs），如跨导、寄生电容、增益带宽乘积、本征延迟等。此外，逆变器的设计采用了所有考虑的器件。结果表明，与使用传统器件的逆变器相比，使用拟议器件的逆变器在噪声裕度、瞬态响应等关键指标上都有显著改善，表现出卓越的特性。目前的研究还为设计超高频应用的各种高性能电路奠定了基础。

引用次数: 0

Two-dimensional Sc2O3 monolayer with tunable ultrawide bandgap for solar-blind ultraviolet photodetector 具有可调超宽带隙的二维 Sc2O3 单层，用于日光盲紫外线光电探测器

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-10-31 DOI: 10.1016/j.micrna.2024.208012

Bo Meng , Wen-Zhi Xiao

A novel 2D scandia (Sc₂O₃) monolayer was identified using an evolutionary algorithm-based crystal structure prediction method. The Sc₂O₃ monolayer exhibits a

P \overline{3} m 1

symmetry and excellent energetic, thermal, dynamical, and mechanical stability, as well as good mechanical flexibility. The monolayer possesses an ultrawide indirect band gap of 6.246 eV. The monolayer is transparent in the visible light zone, while the large exciton effect leads to significant absorption in the solar-blind and vacuum ultraviolet regions. The band gap of this monolayer can be reduced monotonically by external biaxial tensile strain, resulting in the absorption spectrum covering the entire solar blind spectral region when the load reaches 5.0 %. Additionally, the monolayer has an ultra-high in-plane dielectric constant of approximately 50. The superior stability, flexibility, and strain-tunable electronic and optical properties, as well as the ultra-high dielectric constant, suggest its potential application in a solar-blind photodetector in harsh environments.

利用基于进化算法的晶体结构预测方法，发现了一种新型二维钪（Sc2O3）单层。Sc2O3单层具有P3‾m1对称性，具有优异的能量、热、动力学和机械稳定性，以及良好的机械柔韧性。该单层具有 6.246 eV 的超宽间接带隙。该单层在可见光区是透明的，而巨大的激子效应导致其在日盲区和真空紫外区有显著的吸收。外部双轴拉伸应变可单调地减小该单层的带隙，当负载达到 5.0 % 时，吸收光谱会覆盖整个日盲区。此外，该单层具有约 50 的超高面内介电常数。卓越的稳定性、柔韧性、应变可调的电子和光学特性以及超高介电常数表明，它有望应用于恶劣环境下的日盲光电探测器。

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引用次数: 0