Micro and Nanostructures最新文献

英文中文

Second harmonic generation in two-dimensional Janus monolayers: A first-principles investigation

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-01-21 DOI: 10.1016/j.micrna.2025.208077

Shining Liu, Ruhao Yang, Naizhang Sun, Lei Chen, Han Ye, Yumin Liu

Two-dimensional Janus structures have been regarded as promising candidates for nanoscale optical devices due to the unique optical responses resulting from vertical atomic asymmetry within a monolayer. In this paper, we systematically investigate the second harmonic generation (SHG) in 54 Janus MXY (M = Cr, Hf, Mo, Nb, Ta, Ti, V, W, Zr, and X/Y = O, S, Se, Te, and X ≠ Y) monolayers and calculate the second-order nonlinear susceptibilities of each material at six incident laser wavelengths of 405 nm, 532 nm, 800 nm, 1030 nm, 1064 nm and 1550 nm through first-principles calculations. The X-M-Y asymmetry results in non-zero components in the vertical direction, in contrast to non-Janus structures. Focusing on the SHG induced by incident light at wavelengths of 800 nm, 1064 nm, and 1550 nm, polarization-dependent responses of three Janus CrXY (X/Y = S, Se, Te, and X ≠ Y) monolayers are demonstrated. S-polarization exhibits six-fold rotational symmetry, whereas p-polarization exhibits triple rotational symmetry. We expect these results to provide theoretical support and guidance for further screening and designing new nonlinear optical materials.

{"title":"Second harmonic generation in two-dimensional Janus monolayers: A first-principles investigation","authors":"Shining Liu, Ruhao Yang, Naizhang Sun, Lei Chen, Han Ye, Yumin Liu","doi":"10.1016/j.micrna.2025.208077","DOIUrl":"10.1016/j.micrna.2025.208077","url":null,"abstract":"<div><div>Two-dimensional Janus structures have been regarded as promising candidates for nanoscale optical devices due to the unique optical responses resulting from vertical atomic asymmetry within a monolayer. In this paper, we systematically investigate the second harmonic generation (SHG) in 54 Janus MXY (M = Cr, Hf, Mo, Nb, Ta, Ti, V, W, Zr, and X/Y = O, S, Se, Te, and X ≠ Y) monolayers and calculate the second-order nonlinear susceptibilities of each material at six incident laser wavelengths of 405 nm, 532 nm, 800 nm, 1030 nm, 1064 nm and 1550 nm through first-principles calculations. The X-<em>M</em>-Y asymmetry results in non-zero components in the vertical direction, in contrast to non-Janus structures. Focusing on the SHG induced by incident light at wavelengths of 800 nm, 1064 nm, and 1550 nm, polarization-dependent responses of three Janus CrXY (X/Y = S, Se, Te, and X ≠ Y) monolayers are demonstrated. S-polarization exhibits six-fold rotational symmetry, whereas p-polarization exhibits triple rotational symmetry. We expect these results to provide theoretical support and guidance for further screening and designing new nonlinear optical materials.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208077"},"PeriodicalIF":2.7,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143168531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and analysis of interconnected multichannel Schottky FinFET for the detection of breast cancer cells

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-01-21 DOI: 10.1016/j.micrna.2025.208078

V. Shalini , Prashanth Kumar

This study investigates the application of dielectrically controlled Interconnected Multichannel Schottky FinFET (IC–S-FinFET) biosensor for the detection of healthy (MCF-10A) and cancerous cell lines of Hs578T, MDA-MB-231, MCF-7, and T47D. Here, the identification of distinct breast malignant cell types is established based on the variability in the dielectric constant. The evaluation of the biosensor sensitivity has been conducted for parameters such as drain current, subthreshold swing, and I_ON/I_OFF characteristics. Also, the sensitivity of both the positively (5 × 10¹¹Ccm⁻²) and negatively (−5 x 10¹¹Ccm⁻²) charged biomolecules are evaluated for different breast cancer cell lines. In addition to that, the effect of the fill factor on the nanogap was examined for neutral-charged biomolecules. It is found that the sensitivity (S_n) of the designed biosensor device is improved for the rise in fill factor from partly filled to filled nanocavity. The linearity and noise characteristics of the biosensor are also examined. These findings suggest that IC-S-FinFET holds significant potential as a novel, label-free diagnostic tool for early and accurate detection of breast cancer, contributing to improved patient outcomes through timely and precise medical interventions.

{"title":"Design and analysis of interconnected multichannel Schottky FinFET for the detection of breast cancer cells","authors":"V. Shalini , Prashanth Kumar","doi":"10.1016/j.micrna.2025.208078","DOIUrl":"10.1016/j.micrna.2025.208078","url":null,"abstract":"<div><div>This study investigates the application of dielectrically controlled Interconnected Multichannel Schottky FinFET (IC–S-FinFET) biosensor for the detection of healthy (MCF-10A) and cancerous cell lines of Hs578T, MDA-MB-231, MCF-7, and T47D. Here, the identification of distinct breast malignant cell types is established based on the variability in the dielectric constant. The evaluation of the biosensor sensitivity has been conducted for parameters such as drain current, subthreshold swing, and I<sub>ON</sub>/I<sub>OFF</sub> characteristics. Also, the sensitivity of both the positively (5 × 10<sup>11</sup>Ccm<sup>−2</sup>) and negatively (−5 x 10<sup>11</sup>Ccm<sup>−2</sup>) charged biomolecules are evaluated for different breast cancer cell lines. In addition to that, the effect of the fill factor on the nanogap was examined for neutral-charged biomolecules. It is found that the sensitivity (S<sub>n</sub>) of the designed biosensor device is improved for the rise in fill factor from partly filled to filled nanocavity. The linearity and noise characteristics of the biosensor are also examined. These findings suggest that IC-S-FinFET holds significant potential as a novel, label-free diagnostic tool for early and accurate detection of breast cancer, contributing to improved patient outcomes through timely and precise medical interventions.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"199 ","pages":"Article 208078"},"PeriodicalIF":2.7,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143145229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

De Broglie Wave’s Snell’s law, Fresnel equations, and Brewster’s angle

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-01-20 DOI: 10.1016/j.micrna.2025.208075

Larz Piechocki, Wei Li

A systematic comparative study demonstrates that the reflection and refraction of de Broglie waves at a semiconductor heterojunction are analogous to those of electromagnetic waves. We present the quantum reflection rule, Snell’s law, and Fresnel equations. We define the concept of transition energy for the de Broglie wave. Without loss of generality, we use the AlAs/GaAs heterojunction as an example. At the transition energy, electrons pass through the heterojunction without refraction or bending yet retain reflectivity. When the electron’s energy exceeds the transition energy, Brewster’s angle exists, at which the incident de Broglie wave exhibits zero reflectance, similar to the transverse magnetic (TM) mode of electromagnetic waves. However, below the transition energy, no Brewster’s angle or zero reflectance is present, similar to the transverse electric (TE) mode of electromagnetic waves. This transition energy also marks the “refractive index” inversion boundary for total internal reflection.

引用次数: 0

Linearity performance and harmonic distortion analysis of gate-over-pockets hetero-dielectric dual-metal-double-gate TFET for RF applications

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-01-17 DOI: 10.1016/j.micrna.2025.208074

Nisha Yadav , Sunil Jadav , Gaurav Saini

To overcome the CMOS scaling challenges, tunnel field effect transistors (TFETs) are identified as the most promising solution for low power applications. With their ever-increasing demand and recent inclusion in advanced technology nodes, further investigation of TFETs for radio frequency (RF) applications is required. In this work, linearity and harmonic distortion of our proposed gate-over-pockets hetero-dielectric dual-metal-double-gate (GoP-HD-DMDG) TFET, which offers steep subthreshold slope and lower ambipolarity is investigated using well-known performance metrics such as second-order and third-order voltage intercept point (

V I P_{2}

and

V I P_{3}

), 1-dB compression point, third-order input intercept point (

I I P_{3}

), second-order and third-order harmonic distortion (

H D_{2}

and

H D_{3}

). The comparison of GoP-HD-DMDG-TFET with conventional double-gate (DG) TFET and hetero-dielectric double-gate (HD-DG) TFET is carried out. Through simulation results, it is observed that the GoP-HD-DMDG TFET offers comparatively better linearity and less distortion than their counterparts, making it the appropriate choice for radio frequency applications.

{"title":"Linearity performance and harmonic distortion analysis of gate-over-pockets hetero-dielectric dual-metal-double-gate TFET for RF applications","authors":"Nisha Yadav , Sunil Jadav , Gaurav Saini","doi":"10.1016/j.micrna.2025.208074","DOIUrl":"10.1016/j.micrna.2025.208074","url":null,"abstract":"<div><div>To overcome the CMOS scaling challenges, tunnel field effect transistors (TFETs) are identified as the most promising solution for low power applications. With their ever-increasing demand and recent inclusion in advanced technology nodes, further investigation of TFETs for radio frequency (RF) applications is required. In this work, linearity and harmonic distortion of our proposed gate-over-pockets hetero-dielectric dual-metal-double-gate (GoP-HD-DMDG) TFET, which offers steep subthreshold slope and lower ambipolarity is investigated using well-known performance metrics such as second-order and third-order voltage intercept point (<span><math><mrow><mi>V</mi><mi>I</mi><msub><mrow><mi>P</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span> and <span><math><mrow><mi>V</mi><mi>I</mi><msub><mrow><mi>P</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>), 1-dB compression point, third-order input intercept point (<span><math><mrow><mi>I</mi><mi>I</mi><msub><mrow><mi>P</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>), second-order and third-order harmonic distortion (<span><math><mrow><mi>H</mi><msub><mrow><mi>D</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span> and <span><math><mrow><mi>H</mi><msub><mrow><mi>D</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>). The comparison of GoP-HD-DMDG-TFET with conventional double-gate (DG) TFET and hetero-dielectric double-gate (HD-DG) TFET is carried out. Through simulation results, it is observed that the GoP-HD-DMDG TFET offers comparatively better linearity and less distortion than their counterparts, making it the appropriate choice for radio frequency applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"199 ","pages":"Article 208074"},"PeriodicalIF":2.7,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143145232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-01-10 DOI: 10.1016/j.micrna.2025.208073

Yicong Deng, Desen Chen, Titao Li, Minmin Zhu, Xiaorui Xu, Haizhong Zhang, Xiaoqiang Lu

Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of β-Ga₂O₃ thin film to enhance the power figure of merit of β-Ga₂O₃ Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of β-Ga₂O₃ SBDs could be modified by varying the ratios of BCl₃ and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of β-Ga₂O₃ epitaxial layer, the β-Ga₂O₃ SBD without termination structure exhibits a low specific on-resistance (Ron,sp) of 4 mΩ·cm² and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance β-Ga₂O₃ power SBDs.

{"title":"Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode","authors":"Yicong Deng, Desen Chen, Titao Li, Minmin Zhu, Xiaorui Xu, Haizhong Zhang, Xiaoqiang Lu","doi":"10.1016/j.micrna.2025.208073","DOIUrl":"10.1016/j.micrna.2025.208073","url":null,"abstract":"<div><div>Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> thin film to enhance the power figure of merit of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> SBDs could be modified by varying the ratios of BCl<sub>3</sub> and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> epitaxial layer, the <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> SBD without termination structure exhibits a low specific on-resistance (<em>R</em>on,sp) of 4 mΩ·cm<sup>2</sup> and high breakdown voltage (<em>BV</em>) of 1500 V. These results can pave the way for the preparation of high-performance <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power SBDs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"199 ","pages":"Article 208073"},"PeriodicalIF":2.7,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143145233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transmission characteristics of silicon-based grating-gated AlN/GaN HEMTs in the mid-infrared frequency range

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-01-07 DOI: 10.1016/j.micrna.2025.208072

Ming Cai , Shangxuan Sun , Han Su , Min Lu , Xiaomin He , Tao Lin , Zhaonian Yang , Shulong Wang

The grating-gated AlN/GaN HEMTs have demonstrated excellent light absorption capabilities across a wide mid-infrared frequency range, thus being suitable for subwavelength modulation device design. However, the impact of a substrate on the optical transmission characteristics of grating-gated AlN/GaN HEMTs was overlooked in previous studies, limiting the potential applications of the structure. To address the issue, the transmission characteristics of silicon-based grating-gated AlN/GaN HEMTs were researched in the paper. By employing an optical transmission matrix to derive the dispersion characteristics of silicon-based grating-gated AlN/GaN HEMTs, the phonon polaritons are excited in the GaN layer, particularly around 20 THz, significantly influencing the transmission characteristics of the structure. Simulations conducted in COMSOL indicate that employing silicon as a substrate for grating-gated AIN/GaN HEMTs can substantially diminish light absorption by around 20 THz. Decreasing gate length and GaN layer thickness can enhance transmissivity, while varying silicon substrate thickness minimally affects the transmissivity of grating-gated AlN/GaN HEMTs. Significant transmissivity oscillations near 20 THz suggest potential applications for designing mid-infrared filters around 17 THz. Subsequently, a predictive model for transmissivity of silicon-based grating-gated AlN/GaN HEMTs is established using CNN, with a significantly smaller MAE of 0.00809 and a larger R² of 0.98263 achieved. The predictive model accurately determines the required structure size of silicon-based grating-gated AlN/GaN HEMTs within a shorter time, reducing costs during design and manufacturing processes. The results underscore the significant future potential for utilizing silicon-based grating-gated AlN/GaN HEMTs in mid-infrared filters and other device designs.

{"title":"Transmission characteristics of silicon-based grating-gated AlN/GaN HEMTs in the mid-infrared frequency range","authors":"Ming Cai , Shangxuan Sun , Han Su , Min Lu , Xiaomin He , Tao Lin , Zhaonian Yang , Shulong Wang","doi":"10.1016/j.micrna.2025.208072","DOIUrl":"10.1016/j.micrna.2025.208072","url":null,"abstract":"<div><div>The grating-gated AlN/GaN HEMTs have demonstrated excellent light absorption capabilities across a wide mid-infrared frequency range, thus being suitable for subwavelength modulation device design. However, the impact of a substrate on the optical transmission characteristics of grating-gated AlN/GaN HEMTs was overlooked in previous studies, limiting the potential applications of the structure. To address the issue, the transmission characteristics of silicon-based grating-gated AlN/GaN HEMTs were researched in the paper. By employing an optical transmission matrix to derive the dispersion characteristics of silicon-based grating-gated AlN/GaN HEMTs, the phonon polaritons are excited in the GaN layer, particularly around 20 THz, significantly influencing the transmission characteristics of the structure. Simulations conducted in COMSOL indicate that employing silicon as a substrate for grating-gated AIN/GaN HEMTs can substantially diminish light absorption by around 20 THz. Decreasing gate length and GaN layer thickness can enhance transmissivity, while varying silicon substrate thickness minimally affects the transmissivity of grating-gated AlN/GaN HEMTs. Significant transmissivity oscillations near 20 THz suggest potential applications for designing mid-infrared filters around 17 THz. Subsequently, a predictive model for transmissivity of silicon-based grating-gated AlN/GaN HEMTs is established using CNN, with a significantly smaller MAE of 0.00809 and a larger R<sup>2</sup> of 0.98263 achieved. The predictive model accurately determines the required structure size of silicon-based grating-gated AlN/GaN HEMTs within a shorter time, reducing costs during design and manufacturing processes. The results underscore the significant future potential for utilizing silicon-based grating-gated AlN/GaN HEMTs in mid-infrared filters and other device designs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"199 ","pages":"Article 208072"},"PeriodicalIF":2.7,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143145193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual-mode reconfigurable dopingless transistor: A novel device structure

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-01-07 DOI: 10.1016/j.micrna.2024.208065

Rohan Rohidas Naik , Lokesh Kumar Bramhane , T. Veerakumar , Amol D. Rahulkar , Jawar Singh

A novel device structure is proposed in this paper that can function as an Extruded Base-Gate Bipolar Charge Plasma Transistor (EBG-BCPT) when the emitter terminal is grounded. Additionally, this same structure can also be configured as an Extruded Source-Gate Dopingless Tunnel Field Effect Transistor (ESG-DL-TFET) when the emitter terminal is at a higher or positive potential. The addition of a gate electrode to the conventional device (EB-BCPT) enhances control over the base width, leading to more efficient control over the cut-off frequency and current gain of the proposed device EBG-BCPT. In contrast, when the emitter terminal is maintained at a high potential, the ESG-DL-TFET exhibits tunneling effects, resulting in subthreshold conduction and suppressed ambipolar current. 2D TCAD simulations for the EBG-BCPT demonstrate a remarkable increase in peak current gain of

\approx

1000 times along with a cut-off frequency boost of

\approx

10 GHz compared to the conventional EB-BCPT. Additionally, the ESG-DL-TFET shows a subthreshold slope of 53.81 mV/dec while fully suppressing ambipolar current when compared to conventional DL-TFETs. The EBG-BCPT is suited for high-frequency analog circuits requiring adjustable gain and frequency, while the ESG-DL-TFET’s suppressed ambipolar current makes it ideal for low-power digital circuits in energy-efficient computing. The proposed device structure is suitable candidate for Bi-FET technology due to its reconfigurability.

{"title":"Dual-mode reconfigurable dopingless transistor: A novel device structure","authors":"Rohan Rohidas Naik , Lokesh Kumar Bramhane , T. Veerakumar , Amol D. Rahulkar , Jawar Singh","doi":"10.1016/j.micrna.2024.208065","DOIUrl":"10.1016/j.micrna.2024.208065","url":null,"abstract":"<div><div>A novel device structure is proposed in this paper that can function as an Extruded Base-Gate Bipolar Charge Plasma Transistor (EBG-BCPT) when the emitter terminal is grounded. Additionally, this same structure can also be configured as an Extruded Source-Gate Dopingless Tunnel Field Effect Transistor (ESG-DL-TFET) when the emitter terminal is at a higher or positive potential. The addition of a gate electrode to the conventional device (EB-BCPT) enhances control over the base width, leading to more efficient control over the cut-off frequency and current gain of the proposed device EBG-BCPT. In contrast, when the emitter terminal is maintained at a high potential, the ESG-DL-TFET exhibits tunneling effects, resulting in subthreshold conduction and suppressed ambipolar current. 2D TCAD simulations for the EBG-BCPT demonstrate a remarkable increase in peak current gain of<span><math><mo>≈</mo></math></span>1000 times along with a cut-off frequency boost of <span><math><mo>≈</mo></math></span>10 GHz compared to the conventional EB-BCPT. Additionally, the ESG-DL-TFET shows a subthreshold slope of 53.81 mV/dec while fully suppressing ambipolar current when compared to conventional DL-TFETs. The EBG-BCPT is suited for high-frequency analog circuits requiring adjustable gain and frequency, while the ESG-DL-TFET’s suppressed ambipolar current makes it ideal for low-power digital circuits in energy-efficient computing. The proposed device structure is suitable candidate for Bi-FET technology due to its reconfigurability.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"199 ","pages":"Article 208065"},"PeriodicalIF":2.7,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143145234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of thermal annealing and strain on type-II to type-I band alignment transition in InAs/GaAsSb quantum dots

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-01-03 DOI: 10.1016/j.micrna.2024.208069

Imen Saïdi, Houssem Mekni, Kaïs Boujdaria

We conducted a theoretical investigation into the impact of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) embedded in GaAsSb barriers. We examined how the lattice-mismatch strain and charge carriers confinement profiles affect the excitonic transition energy and radiative lifetime. The In/Ga interdiffusion between the QD and barrier materials was first modeled using Fickian diffusion. Our findings show that annealing affects both the composition and size of QDs, thus improving their uniformity. Next, we analyzed the influence of strain reduction on carrier confinement potentials during annealing by solving the Schrödinger equation separately for charge carriers. The importance of strain on the QD potential profile and carrier spatial distribution was investigated. We predict a transition from type-II to type-I QDs at a critical temperature,

T_{a}^{C} = 800 ° C

, which is in agreement with experimental results. Finally, we estimate a reduction in excitonic radiative lifetime from 10

ns

(type-II) to 1

ns

(type-I), which is consistent with prior experimental studies. Our results demonstrate that thermal annealing increases radiative recombination rates while decreasing localized states in the GaAsSb layer. This study demonstrates the ability to control the transition between type-II and type-I band alignments in annealed QDs, making them promising for use in solar cells.

{"title":"Effects of thermal annealing and strain on type-II to type-I band alignment transition in InAs/GaAsSb quantum dots","authors":"Imen Saïdi, Houssem Mekni, Kaïs Boujdaria","doi":"10.1016/j.micrna.2024.208069","DOIUrl":"10.1016/j.micrna.2024.208069","url":null,"abstract":"<div><div>We conducted a theoretical investigation into the impact of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) embedded in GaAsSb barriers. We examined how the lattice-mismatch strain and charge carriers confinement profiles affect the excitonic transition energy and radiative lifetime. The In/Ga interdiffusion between the QD and barrier materials was first modeled using Fickian diffusion. Our findings show that annealing affects both the composition and size of QDs, thus improving their uniformity. Next, we analyzed the influence of strain reduction on carrier confinement potentials during annealing by solving the Schrödinger equation separately for charge carriers. The importance of strain on the QD potential profile and carrier spatial distribution was investigated. We predict a transition from type-II to type-I QDs at a critical temperature, <span><math><mrow><msubsup><mrow><mi>T</mi></mrow><mrow><mi>a</mi></mrow><mrow><mi>C</mi></mrow></msubsup><mo>=</mo><mn>800</mn><mspace></mspace><mo>°</mo><mi>C</mi></mrow></math></span>, which is in agreement with experimental results. Finally, we estimate a reduction in excitonic radiative lifetime from 10 <span><math><mo>ns</mo></math></span> (type-II) to 1 <span><math><mo>ns</mo></math></span> (type-I), which is consistent with prior experimental studies. Our results demonstrate that thermal annealing increases radiative recombination rates while decreasing localized states in the GaAsSb layer. This study demonstrates the ability to control the transition between type-II and type-I band alignments in annealed QDs, making them promising for use in solar cells.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"199 ","pages":"Article 208069"},"PeriodicalIF":2.7,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143145224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A label-free dielectric-modulated biosensor using split-source double gate TFET

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-01-01 DOI: 10.1016/j.micrna.2024.208066

Basudha Dewan , Shalini Chaudhary , Devendrapal Singh

This work presents split source double gate (SSDG) dielectric modulated (DM) Tunnel Field Effect Transistor (TFET) for label free biosensing. The nanogap cavity is considered near the source region to lodge an enormous amount of biological molecules and HfO₂ is considered towards the drain side. In SSDG-DMTFET the source is split in two separate sections. The lower half is formed out of Germanium, whereas the upper part is comprised of Silicon. Reduced current leakage, improved inclination with respect to SS, and decreased ambipolar conductance are the results of these hetero-structural modifications. It also provides a comparatively improvement in current sensitivity

S_{n}

and SS due to its enhanced tunneling junction area. The

S_{n}

is evaluated for fully filled nanogap cavity under the neutral biomolecules with wide variation in dielectric constant (k). We have reported the Subthreshold Swing (SS), input characteristics, output characteristics, energy band diagram, threshold voltage

(V_{T H})

and

I_{O N} / I_{O F F}

ratio by varying k from 1 to 12 for uncharged biomolecules within the nanogap. The performance is also evaluated for partially and non-uniformly filled nanogap with wide variation in dielectric constant (k). Furthermore, sensitivity of SSDG-DMTFET is compared with the sensitivity of existing FET/TFET based biosensors.

{"title":"A label-free dielectric-modulated biosensor using split-source double gate TFET","authors":"Basudha Dewan , Shalini Chaudhary , Devendrapal Singh","doi":"10.1016/j.micrna.2024.208066","DOIUrl":"10.1016/j.micrna.2024.208066","url":null,"abstract":"<div><div>This work presents split source double gate (SSDG) dielectric modulated (DM) Tunnel Field Effect Transistor (TFET) for label free biosensing. The nanogap cavity is considered near the source region to lodge an enormous amount of biological molecules and HfO<sub>2</sub> is considered towards the drain side. In SSDG-DMTFET the source is split in two separate sections. The lower half is formed out of Germanium, whereas the upper part is comprised of Silicon. Reduced current leakage, improved inclination with respect to SS, and decreased ambipolar conductance are the results of these hetero-structural modifications. It also provides a comparatively improvement in current sensitivity <span><math><msub><mrow><mi>S</mi></mrow><mrow><mi>n</mi></mrow></msub></math></span> and SS due to its enhanced tunneling junction area. The <span><math><msub><mrow><mi>S</mi></mrow><mrow><mi>n</mi></mrow></msub></math></span> is evaluated for fully filled nanogap cavity under the neutral biomolecules with wide variation in dielectric constant (k). We have reported the Subthreshold Swing (SS), input characteristics, output characteristics, energy band diagram, threshold voltage <span><math><mrow><mo>(</mo><msub><mrow><mi>V</mi></mrow><mrow><mi>T</mi><mi>H</mi></mrow></msub><mo>)</mo></mrow></math></span> and <span><math><mrow><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub><mo>/</mo><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>F</mi><mi>F</mi></mrow></msub></mrow></math></span> ratio by varying k from 1 to 12 for uncharged biomolecules within the nanogap. The performance is also evaluated for partially and non-uniformly filled nanogap with wide variation in dielectric constant (k). Furthermore, sensitivity of SSDG-DMTFET is compared with the sensitivity of existing FET/TFET based biosensors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"199 ","pages":"Article 208066"},"PeriodicalIF":2.7,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143145554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature sensitivity of GaSb/Si/SiGe heterojunction vertical nanowire junctionless field-effect transistor for logic circuit applications

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2024-12-31 DOI: 10.1016/j.micrna.2024.208071

Anchal Thakur , Michael Cholines Pedapudi , Nishant Shrivastva , Prashant Mani , Girish Wadhwa

In this article, a GaSb/Si/SiGe heterojunction vertical nanowire (V-NW) junctionless field-effect transistors (JFETs) under the influence of elevated temperature have been investigated. The vertical nanowire configuration with a GaSb source increases the source-channel barrier height, thus reducing the short-channel effect at elevated temperatures (T = 300K, 400K, and 500K). Elevated temperature also impacts the energy band diagram and tunnelling width. The temperature shows the impact on thermal voltage (Vt), density of states (NC and NV) and intrinsic carrier concentrations (ni). Moreover, even at elevated temperatures, the OFF-state current for GaSb/Si/SiGe HT V-NW JLFETs only increased by one order of magnitude. In addition to electron velocity, the electric field is also affected by elevated temperatures to increase the kinetic energy of the electrons, leading to faster movement and a stronger electric field. Analogue performance parameters like transconductance (gm), transconductance gain factor (gm/Ids), cutoff frequency (ft) and intrinsic delay (τ) are used as figures of merit to optimize the GaSb/Si/SiGe HT V-NW JLFET for logic circuits.

{"title":"Temperature sensitivity of GaSb/Si/SiGe heterojunction vertical nanowire junctionless field-effect transistor for logic circuit applications","authors":"Anchal Thakur , Michael Cholines Pedapudi , Nishant Shrivastva , Prashant Mani , Girish Wadhwa","doi":"10.1016/j.micrna.2024.208071","DOIUrl":"10.1016/j.micrna.2024.208071","url":null,"abstract":"<div><div>In this article, a GaSb/Si/SiGe heterojunction vertical nanowire (V-NW) junctionless field-effect transistors (JFETs) under the influence of elevated temperature have been investigated. The vertical nanowire configuration with a GaSb source increases the source-channel barrier height, thus reducing the short-channel effect at elevated temperatures (T = 300K, 400K, and 500K). Elevated temperature also impacts the energy band diagram and tunnelling width. The temperature shows the impact on thermal voltage (<em>V</em>t), density of states (<em>N</em>C and <em>N</em>V) and intrinsic carrier concentrations (<em>n</em>i). Moreover, even at elevated temperatures, the OFF-state current for GaSb/Si/SiGe HT V-NW JLFETs only increased by one order of magnitude. In addition to electron velocity, the electric field is also affected by elevated temperatures to increase the kinetic energy of the electrons, leading to faster movement and a stronger electric field. Analogue performance parameters like transconductance (gm), transconductance gain factor (gm/Ids), cutoff frequency (ft) and intrinsic delay (τ) are used as figures of merit to optimize the GaSb/Si/SiGe HT V-NW JLFET for logic circuits.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"199 ","pages":"Article 208071"},"PeriodicalIF":2.7,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143145555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

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