Micro and Nanostructures最新文献

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Mapping the synergistic effect of shape attributes and oxidative coating on the effective complex dielectric function in core-multishell quantum dots 绘制形状属性和氧化涂层对核-多壳量子点有效复介电功能的协同效应

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-04 DOI: 10.1016/j.micrna.2026.208561

K. Hasanirokh , A. Naifar

In this article, we introduce a tunable core–multishell nanostructure (ZnTe/CdSe/CdS/CdSe/ZnSe) whose architecture can be adjusted through shell thicknesses and the surrounding oxidative environment (SiO₂ and HfO₂). By jointly exploiting quantum confinement and dielectric non-uniformity at the interfaces, the proposed model enables effective control of optical nonlinear characteristics, opening pathways toward tailoring nonlinear responses that remain challenging for existing optoelectronic designs. The numerical work is carried out under the approximated mass framework by unraveling the 3-D Schrödinger equation in the presence of an oxide coating. After obtaining the wavefunctions and their corresponding energies, the dipole matrix element is quantitatively analyzed in response to various structural and dielectric modifications. Based on the compact density method, our computational findings revealed that the eigenfrequencies for both real and imaginary parts associated to the effective complex dielectric function are primarily governed by the oxidative layer attributes and spatial decesive metrics. In addition, selecting HfO₂ to encapsulate the nanostructure reduces the occurrence of undesirable photobleaching in the absorption spectrum until the incident illumination reaches nearly 0.6 MW/cm². Leveraging the dimension-, configuration-, capping composition-, and permittivity-modulated spectral aspects, our model provides a conceptual framework that can assist in the rational design of more advanced light–matter interaction systems.

在本文中，我们介绍了一种可调的核-多壳纳米结构（ZnTe/CdSe/CdS/CdSe/ZnSe），其结构可以通过壳厚度和周围的氧化环境（SiO2和HfO2）来调节。通过共同利用量子约束和界面处的介电不均匀性，所提出的模型能够有效地控制光学非线性特性，为定制非线性响应开辟了道路，这对现有的光电设计仍然具有挑战性。数值计算是在近似的质量框架下进行的，通过展开氧化涂层存在的三维Schrödinger方程。在得到波函数及其对应的能量后，定量分析了偶极矩阵元素对各种结构和介电变化的响应。基于紧致密度方法，我们的计算结果表明，与有效复介电函数相关的实部和虚部的特征频率主要由氧化层属性和空间衰减度量控制。此外，在入射照度接近0.6 MW/cm2之前，选择HfO2封装纳米结构可以减少吸收光谱中不良光漂白的发生。利用尺寸、结构、封顶成分和介电常数调制光谱方面，我们的模型提供了一个概念框架，可以帮助合理设计更先进的光-物质相互作用系统。

{"title":"Mapping the synergistic effect of shape attributes and oxidative coating on the effective complex dielectric function in core-multishell quantum dots","authors":"K. Hasanirokh , A. Naifar","doi":"10.1016/j.micrna.2026.208561","DOIUrl":"10.1016/j.micrna.2026.208561","url":null,"abstract":"<div><div>In this article, we introduce a tunable core–multishell nanostructure (ZnTe/CdSe/CdS/CdSe/ZnSe) whose architecture can be adjusted through shell thicknesses and the surrounding oxidative environment (SiO<sub>2</sub> and HfO<sub>2</sub>). By jointly exploiting quantum confinement and dielectric non-uniformity at the interfaces, the proposed model enables effective control of optical nonlinear characteristics, opening pathways toward tailoring nonlinear responses that remain challenging for existing optoelectronic designs. The numerical work is carried out under the approximated mass framework by unraveling the 3-D Schrödinger equation in the presence of an oxide coating. After obtaining the wavefunctions and their corresponding energies, the dipole matrix element is quantitatively analyzed in response to various structural and dielectric modifications. Based on the compact density method, our computational findings revealed that the eigenfrequencies for both real and imaginary parts associated to the effective complex dielectric function are primarily governed by the oxidative layer attributes and spatial decesive metrics. In addition, selecting HfO<sub>2</sub> to encapsulate the nanostructure reduces the occurrence of undesirable photobleaching in the absorption spectrum until the incident illumination reaches nearly 0.6 MW/cm<sup>2</sup>. Leveraging the dimension-, configuration-, capping composition-, and permittivity-modulated spectral aspects, our model provides a conceptual framework that can assist in the rational design of more advanced light–matter interaction systems.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208561"},"PeriodicalIF":3.0,"publicationDate":"2026-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145939149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Beyond planar: A vertical sense mass approach to overcome damping challenge in MEMS gyroscope 超越平面：克服MEMS陀螺仪阻尼挑战的垂直传感质量方法

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-02 DOI: 10.1016/j.micrna.2025.208539

Shaveta , R.K. Bhan , Rishu Chaujar

This study addresses the critical challenge of damping management in miniaturized MEMS gyroscopes, essential for navigation and industrial applications. Recently, a novel MEMS gyroscope having many performance advantages and utilizing a vertical sense mass (VSM) instead of a conventional planar sense mass (PSM) was reported. The VSM design, using deep reactive ion etching (DRIE), offers a superior Figure of merit, compact footprint and utilizes in-plane sense motion. This paper presents a comparative analysis of energy dissipation mechanisms and their impact on the quality factor (Q-factor) in a VSM gyroscope design versus a conventional PSM architecture, both under identical sense mass areas. The research systematically investigates various damping mechanisms, including air damping (squeeze film and slide film), thermoelastic damping, material damping (Rayleigh damping), anchor loss, viscous damping and acoustic damping. The results show that despite vacuum packaging, residual air damping remains significant. Our results show that trends of damping mechanisms for both designs are similar; however, the net quality factor (Q_Total) in VSM shows an improvement by a factor of 8 compared to a conventional PSM design. Furthermore, regarding Q versus temperature variation, although trends are similar for both designs, the VSM design exhibits a higher Q by a factor of 2.7. This comprehensive analysis aims to elucidate how the unique VSM geometry affects damping characteristics, ultimately enhancing performance metrics. Further, VSM exhibits higher sense displacement up to a quality factor of 100, beyond which both designs show comparable displacement. For bandwidth, VSM consistently offers ∼20 times higher bandwidth across all Q values, while also achieving ∼3.33 times lower noise. Sensitivity analysis reveals that, due to fabrication imperfections, the maximum variation in Q_Total is ±12.8 %. The proposed VSM design is validated with the state-of-the-art designs and experimental results.

本研究解决了微型化MEMS陀螺仪阻尼管理的关键挑战，这对导航和工业应用至关重要。最近报道了一种新型的MEMS陀螺仪，该陀螺仪具有许多性能优势，并且使用垂直感测质量（VSM）代替传统的平面感测质量（PSM）。VSM设计采用深度反应离子蚀刻（DRIE），具有优越的性能图，占地面积小，并利用平面内传感运动。本文介绍了在相同感应质量面积下，VSM陀螺仪设计与传统PSM结构的能量耗散机制及其对质量因子（q因子）的影响的比较分析。系统研究了各种阻尼机理，包括空气阻尼（挤压膜和滑动膜）、热弹性阻尼、材料阻尼（瑞利阻尼）、锚固损失、粘性阻尼和声学阻尼。结果表明，尽管真空包装，残余空气阻尼仍然显著。结果表明，两种设计的阻尼机理趋势相似；然而，与传统的PSM设计相比，VSM中的净质量因子（QTotal）提高了8倍。此外，关于Q与温度的变化，尽管两种设计的趋势相似，但VSM设计的Q高2.7倍。这项综合分析旨在阐明独特的VSM几何结构如何影响阻尼特性，最终提高性能指标。此外，VSM表现出更高的感知位移，最高质量因子为100，超过该质量因子，两种设计都表现出相当的位移。对于带宽，VSM在所有Q值上始终提供高~ 20倍的带宽，同时还实现低~ 3.33倍的噪声。灵敏度分析表明，由于制造缺陷，QTotal的最大变化为±12.8%。提出的VSM设计通过最先进的设计和实验结果进行了验证。

{"title":"Beyond planar: A vertical sense mass approach to overcome damping challenge in MEMS gyroscope","authors":"Shaveta , R.K. Bhan , Rishu Chaujar","doi":"10.1016/j.micrna.2025.208539","DOIUrl":"10.1016/j.micrna.2025.208539","url":null,"abstract":"<div><div>This study addresses the critical challenge of damping management in miniaturized MEMS gyroscopes, essential for navigation and industrial applications. Recently, a novel MEMS gyroscope having many performance advantages and utilizing a vertical sense mass (VSM) instead of a conventional planar sense mass (PSM) was reported. The VSM design, using deep reactive ion etching (DRIE), offers a superior Figure of merit, compact footprint and utilizes in-plane sense motion. This paper presents a comparative analysis of energy dissipation mechanisms and their impact on the quality factor (Q-factor) in a VSM gyroscope design versus a conventional PSM architecture, both under identical sense mass areas. The research systematically investigates various damping mechanisms, including air damping (squeeze film and slide film), thermoelastic damping, material damping (Rayleigh damping), anchor loss, viscous damping and acoustic damping. The results show that despite vacuum packaging, residual air damping remains significant. Our results show that trends of damping mechanisms for both designs are similar; however, the net quality factor (Q<sub>Total</sub>) in VSM shows an improvement by a factor of 8 compared to a conventional PSM design. Furthermore, regarding Q versus temperature variation, although trends are similar for both designs, the VSM design exhibits a higher Q by a factor of 2.7. This comprehensive analysis aims to elucidate how the unique VSM geometry affects damping characteristics, ultimately enhancing performance metrics. Further, VSM exhibits higher sense displacement up to a quality factor of 100, beyond which both designs show comparable displacement. For bandwidth, VSM consistently offers ∼20 times higher bandwidth across all Q values, while also achieving ∼3.33 times lower noise. Sensitivity analysis reveals that, due to fabrication imperfections, the maximum variation in Q<sub>Total</sub> is ±12.8 %. The proposed VSM design is validated with the state-of-the-art designs and experimental results.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208539"},"PeriodicalIF":3.0,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145939150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Review of reliability of threshold voltage (Vth) extraction methods in silicon-based tunnel field effect transistors (TFETs) 硅基隧道场效应晶体管阈值电压（Vth）提取方法的可靠性综述

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-01-02 DOI: 10.1016/j.micrna.2025.208559

Vijaya Kumar K. , Rithika R. , Suresh Balanethiram , J. Indra

Threshold voltage (

V_{th}

) extraction in Tunnel Field-Effect Transistors (TFETs) remains a challenging task due to lack of inversion layer formation in channel region. In this work, we investigate the reliability of three widely used

V_{th}

extraction techniques: Constant Current (CC), Transconductance Change (TC), and Linear Extrapolation (LE) methods across ten silicon-based TFET structures featuring variations in spacer material, spacer length, gate oxide material, contact placement position and contact geometry. Simulations were performed at multiple drain voltages (

V_{DS}

= 0.01V, 0.5V, 1.0V, and 1.5 V) to study the influence of drain bias on threshold behavior. Our results reveal that the

V_{th}

dependence on

V_{DS}

due to Drain Induced Barrier Lowering (DIBL) is captured accurately in TC but not in CC. Also we inferred that LE method follows the trend of TC method. This comparative analysis highlights the inherent trade-offs between physical accuracy and bias sensitivity in different extraction methods and provides insights for selecting appropriate techniques in TFET modeling and circuit design.

隧道场效应晶体管（tfet）的阈值电压（Vth）提取一直是一项具有挑战性的任务，因为通道区域缺乏反转层的形成。在这项工作中，我们研究了三种广泛使用的Vth提取技术的可靠性：恒流（CC）、跨导变化（TC）和线性外推（LE）方法，这些方法跨越了10种硅基TFET结构，这些结构具有间隔材料、间隔长度、栅极氧化物材料、触点放置位置和触点几何形状的变化。在多个漏极电压（VDS = 0.01V、0.5V、1.0V和1.5 V）下进行仿真，研究漏极偏置对阈值行为的影响。我们的研究结果表明，由于漏极诱导屏障降低（DIBL）导致的Vth对VDS的依赖在TC中得到了准确的捕获，而在CC中没有得到准确的捕获，并且我们推断LE方法遵循了TC方法的趋势。这种比较分析强调了不同提取方法中物理精度和偏置灵敏度之间的内在权衡，并为在TFET建模和电路设计中选择适当的技术提供了见解。

{"title":"Review of reliability of threshold voltage (Vth) extraction methods in silicon-based tunnel field effect transistors (TFETs)","authors":"Vijaya Kumar K. , Rithika R. , Suresh Balanethiram , J. Indra","doi":"10.1016/j.micrna.2025.208559","DOIUrl":"10.1016/j.micrna.2025.208559","url":null,"abstract":"<div><div>Threshold voltage (<span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>th</mi></mrow></msub></math></span>) extraction in Tunnel Field-Effect Transistors (TFETs) remains a challenging task due to lack of inversion layer formation in channel region. In this work, we investigate the reliability of three widely used <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>th</mi></mrow></msub></math></span> extraction techniques: Constant Current (CC), Transconductance Change (TC), and Linear Extrapolation (LE) methods across ten silicon-based TFET structures featuring variations in spacer material, spacer length, gate oxide material, contact placement position and contact geometry. Simulations were performed at multiple drain voltages (<span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>DS</mi></mrow></msub></math></span> = 0.01V, 0.5V, 1.0V, and 1.5 V) to study the influence of drain bias on threshold behavior. Our results reveal that the <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>th</mi></mrow></msub></math></span> dependence on <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>DS</mi></mrow></msub></math></span> due to Drain Induced Barrier Lowering (DIBL) is captured accurately in TC but not in CC. Also we inferred that LE method follows the trend of TC method. This comparative analysis highlights the inherent trade-offs between physical accuracy and bias sensitivity in different extraction methods and provides insights for selecting appropriate techniques in TFET modeling and circuit design.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208559"},"PeriodicalIF":3.0,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145939148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

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IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

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IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

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IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

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IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

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IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

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IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

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