Pub Date : 2025-12-18DOI: 10.1016/j.micrna.2025.208530
Emad H. Hussein, Jasim S. Alikhan
The physical characteristics of cupric oxide (Cu2O) nanoporous modulated with nickel oxide nanoparticles (NiO NPs) for electronics and nanoelectronics that operate at a certain resonance frequency were investigated. For porous fabrication, copper (Cu) substrates were subjected to a simple electrochemical anodization at a certain electrolyte concentration and time. The anodizing electrical field was purposely adjusted at 2.5, 3.75, and 5 V/cm to induce nano-porosity. Then, a nanosheet-like porous material with a cracked structure of Cu2O decorated with NiO NPs was imaged. Photoluminescence (PL) emissions at around 297 nm and 447 nm were recorded, indicating the ability to exploit a long range of the ultraviolet–visible (UV–Vis) light. The electrical conductivity of Cu2O nanostructures (NS) was modified by decorating them with NiO NPs. Accordingly, two behaviors in the alternating electrical conductivity (σAC) against frequency were revealed, with 0.4 S/cm at 20 Hz and 0.02 S/cm at 100 kHz. While the conductivity decreases with frequency, an anomalous behavior was observed in which high-conductivity Gaussian peaks were seen at a resonance frequency of about 1 kHz in the heterostructures (HS) prepared at a low electrical field. Thus, the anodized field may practically direct the nanostructures in the nanoelectronic route to operate in a specific frequency region.
{"title":"Influence of anodizing electric-field on the physical characteristics of NiO nanoparticles-decorated Cu2O nanoporous for nanoelectronics","authors":"Emad H. Hussein, Jasim S. Alikhan","doi":"10.1016/j.micrna.2025.208530","DOIUrl":"10.1016/j.micrna.2025.208530","url":null,"abstract":"<div><div>The physical characteristics of cupric oxide (Cu<sub>2</sub>O) nanoporous modulated with nickel oxide nanoparticles (NiO NPs) for electronics and nanoelectronics that operate at a certain resonance frequency were investigated. For porous fabrication, copper (Cu) substrates were subjected to a simple electrochemical anodization at a certain electrolyte concentration and time. The anodizing electrical field was purposely adjusted at 2.5, 3.75, and 5 V/cm to induce nano-porosity. Then, a nanosheet-like porous material with a cracked structure of Cu<sub>2</sub>O decorated with NiO NPs was imaged. Photoluminescence (PL) emissions at around 297 nm and 447 nm were recorded, indicating the ability to exploit a long range of the ultraviolet–visible (UV–Vis) light. The electrical conductivity of Cu<sub>2</sub>O nanostructures (NS) was modified by decorating them with NiO NPs. Accordingly, two behaviors in the alternating electrical conductivity (σ<sub>AC</sub>) against frequency were revealed, with 0.4 S/cm at 20 Hz and 0.02 S/cm at 100 kHz. While the conductivity decreases with frequency, an anomalous behavior was observed in which high-conductivity Gaussian peaks were seen at a resonance frequency of about 1 kHz in the heterostructures (HS) prepared at a low electrical field. Thus, the anodized field may practically direct the nanostructures in the nanoelectronic route to operate in a specific frequency region.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208530"},"PeriodicalIF":3.0,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145841729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The present study focuses on the performance improvement of an inverter having trapezoidal channel profiles using the SYNOPSYS TCAD simulation tool. A p-type Gate-All-Around (GAA) MOSFET with six channels and an n-type GAA MOSFET with three channels are designed to have matching transfer and output characteristics which are essential for optimizing digital performance. The matching of the characteristics is achieved by carefully regulating design parameters such as work function, channel doping concentration, source/drain doping concentration. The effect of process-induced inclination in the channel region on inverter performance is a crucial component of the study. The study measures the impact of angle from 0°to 20°with step size of 5°on inverter functioning with three types of gate oxide. The results help to optimize future nanoscale devices by shedding light on the heterogeneity in (GAA) transistors caused by manufacturing.
{"title":"Computational investigation of trapezoidal channel profiles in Gate-All-Around (GAA) FETs for digital performance","authors":"Rohan Raj , Sandeep Moparthi , Arun Kumar , P.K. Tiwari , P.S.T.N. Srinivas","doi":"10.1016/j.micrna.2025.208523","DOIUrl":"10.1016/j.micrna.2025.208523","url":null,"abstract":"<div><div>The present study focuses on the performance improvement of an inverter having trapezoidal channel profiles using the SYNOPSYS TCAD simulation tool. A p-type Gate-All-Around (GAA) MOSFET with six channels and an n-type GAA MOSFET with three channels are designed to have matching transfer and output characteristics which are essential for optimizing digital performance. The matching of the characteristics is achieved by carefully regulating design parameters such as work function, channel doping concentration, source/drain doping concentration. The effect of process-induced inclination in the channel region on inverter performance is a crucial component of the study. The study measures the impact of angle from 0°to 20°with step size of 5°on inverter functioning with three types of gate oxide. The results help to optimize future nanoscale devices by shedding light on the heterogeneity in (GAA) transistors caused by manufacturing.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208523"},"PeriodicalIF":3.0,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145799780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-16DOI: 10.1016/j.micrna.2025.208528
Saba Khalil , Muneerah Alomar , Muhammad Ali Hamza Shahbaz , Mohammed Jalalah , Amir Muhammad Afzal , M.A. Diab , Farid A. Harraz
Hydrogen is emerging as a promising clean and sustainable energy carrier for energy generation and storage via electrolysis. The design of multifunctional electrodes that can catalyze and store energy is a significant issue. This paper presents a hierarchically engineered composite electrode incorporating a combination of redox-active species based binary transition metal oxide (ZrV2O7), with a conductive structure of g-C3N4 and rGO to provide an improved capacity of charge-storage. The optimized design facilitates fast diffusion of ions and charge transfer as well as stable electrochemical cycling with the resultant superior energy-storage capability and consistent HER electrocatalytic splitting capability. The ZrV2O7@g-C3N4–electrode delivers the highest specific capacity of 1123 Cg-1 in Hg/HgO referencing cell system. The ZrV2O7@g-C3N4/rGO//AC-hybrid device presents the tunable charge storage response, with 35 Wh kg−1 and 2559 W kg−1, of 223 Cg-1 of energy density (Ed), Power density (Pd), and specific capacity measurements. The ZrV2O7@g-C3N4–electrode provides enhanced HER kinetics with an overpotential of 57 mV and the Tafel slope of 61 mV.dec−1, and outstanding cycling stability and durability. The efficient electrocatalytic response of the present ZrV2O7@g-C3N4/rGO electrode presents it as a hybrid, like platform, having a promising approach to next-generation hybrid devices in which energy conversion, high energy density, and fast power delivery can be simultaneously attained.
氢正在成为一种有前途的清洁和可持续的能源载体,用于通过电解发电和储存能源。能够催化和储存能量的多功能电极的设计是一个重要的问题。本文提出了一种分层设计的复合电极,该电极结合了氧化还原活性物质二元过渡金属氧化物(ZrV2O7),具有g-C3N4和rGO的导电结构,以提供改进的电荷存储能力。优化后的设计促进了离子的快速扩散和电荷转移,以及稳定的电化学循环,从而获得了卓越的储能能力和一致的HER电催化分裂能力。ZrV2O7@g-C3N4 -电极在Hg/HgO基准电池系统中提供最高的1123 Cg-1比容量。ZrV2O7@g-C3N4/rGO//交流混合装置具有可调的电荷存储响应,能量密度(Ed)、功率密度(Pd)和比容量测量值分别为35 Wh kg -1和2559 W kg -1。ZrV2O7@g-C3N4 -电极提供了增强的HER动力学,过电位为57 mV, Tafel斜率为61 mV.dec−1,并且具有出色的循环稳定性和耐久性。目前ZrV2O7@g-C3N4/rGO电极的高效电催化响应表明它是一个混合平台,具有下一代混合设备的有前途的方法,其中能量转换,高能量密度和快速电力输送可以同时实现。
{"title":"Novel bifunctional ZrV2O7@g-C3N4/rGO electrode with synergistic interface engineering for high-efficiency hydrogen evolution and advanced hybrid supercapacitor in alkaline media","authors":"Saba Khalil , Muneerah Alomar , Muhammad Ali Hamza Shahbaz , Mohammed Jalalah , Amir Muhammad Afzal , M.A. Diab , Farid A. Harraz","doi":"10.1016/j.micrna.2025.208528","DOIUrl":"10.1016/j.micrna.2025.208528","url":null,"abstract":"<div><div>Hydrogen is emerging as a promising clean and sustainable energy carrier for energy generation and storage via electrolysis. The design of multifunctional electrodes that can catalyze and store energy is a significant issue. This paper presents a hierarchically engineered composite electrode incorporating a combination of redox-active species based binary transition metal oxide (ZrV<sub>2</sub>O<sub>7</sub>), with a conductive structure of g-C<sub>3</sub>N<sub>4</sub> and rGO to provide an improved capacity of charge-storage. The optimized design facilitates fast diffusion of ions and charge transfer as well as stable electrochemical cycling with the resultant superior energy-storage capability and consistent HER electrocatalytic splitting capability. The ZrV<sub>2</sub>O<sub>7</sub>@g-C<sub>3</sub>N<sub>4</sub>–electrode delivers the highest specific capacity of 1123 Cg<sup>-1</sup> in Hg/HgO referencing cell system. The ZrV<sub>2</sub>O<sub>7</sub>@g-C<sub>3</sub>N<sub>4</sub>/rGO//AC-hybrid device presents the tunable charge storage response, with 35 Wh kg<sup>−1</sup> and 2559 W kg<sup>−1</sup>, of 223 Cg<sup>-1</sup> of energy density (E<sub>d</sub>), Power density (P<sub>d</sub>), and specific capacity measurements. The ZrV<sub>2</sub>O<sub>7</sub>@g-C<sub>3</sub>N<sub>4</sub>–electrode provides enhanced HER kinetics with an overpotential of 57 mV and the Tafel slope of 61 mV.dec<sup>−1</sup>, and outstanding cycling stability and durability. The efficient electrocatalytic response of the present ZrV<sub>2</sub>O<sub>7</sub>@g-C<sub>3</sub>N<sub>4</sub>/rGO electrode presents it as a hybrid, like platform, having a promising approach to next-generation hybrid devices in which energy conversion, high energy density, and fast power delivery can be simultaneously attained.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208528"},"PeriodicalIF":3.0,"publicationDate":"2025-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145841730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-14DOI: 10.1016/j.micrna.2025.208527
Ammar Armghan , Bo Bo Han , Ashish Baldania , Khaled Aliqab , Meshari Alsharari , Yogesh Sharma , Shobhit K. Patel
Solar energy is essential for driving the transition toward a clean and sustainable energy cycle. Research on solar absorbers is a key focus in solar energy systems, as it directly contributes to improved energy harvesting performance. The current design with the material composition of the Cr–Fe3O4–ZrO2 and a graphene nanostructure is applied in the investigation of the current solar structure. The current absorber can work in the ultra-wideband (UV-MIR) spectra and with an efficient rate of 94.66 % for 2800 nm. Moreover, the current solar absorber can reach 97.38 % for 1000 nm with the proficient square-resonator design. We distributed the machine learning section in the current work to describe the predicted and actual value output in each parameter with the linear regression method. With the good efficiency of radiation, the current research can be used as a renewable energy option in hatcheries and dairies, swimming pool warming, the agricultural sector, health clubs, boiler feed, and so on.
{"title":"Next-generation nanostructured graphene–Cr–fe3O4–ZrO2 solar absorber: AI-driven performance prediction and optimization for renewable energy applications","authors":"Ammar Armghan , Bo Bo Han , Ashish Baldania , Khaled Aliqab , Meshari Alsharari , Yogesh Sharma , Shobhit K. Patel","doi":"10.1016/j.micrna.2025.208527","DOIUrl":"10.1016/j.micrna.2025.208527","url":null,"abstract":"<div><div>Solar energy is essential for driving the transition toward a clean and sustainable energy cycle. Research on solar absorbers is a key focus in solar energy systems, as it directly contributes to improved energy harvesting performance. The current design with the material composition of the Cr–Fe<sub>3</sub>O<sub>4</sub>–ZrO<sub>2</sub> and a graphene nanostructure is applied in the investigation of the current solar structure. The current absorber can work in the ultra-wideband (UV-MIR) spectra and with an efficient rate of 94.66 % for 2800 nm. Moreover, the current solar absorber can reach 97.38 % for 1000 nm with the proficient square-resonator design. We distributed the machine learning section in the current work to describe the predicted and actual value output in each parameter with the linear regression method. With the good efficiency of radiation, the current research can be used as a renewable energy option in hatcheries and dairies, swimming pool warming, the agricultural sector, health clubs, boiler feed, and so on.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208527"},"PeriodicalIF":3.0,"publicationDate":"2025-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145799782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-13DOI: 10.1016/j.micrna.2025.208526
K. Umamaheswari , P. Pattunnarajam , T. Bhargava Ramu , R. Balasubramaniyan , P.S. Gomathi , V. Samuthira Pandi
Chalcogenide perovskites have emerged as promising alternatives to halide perovskite solar cells, offering superior stability, non-toxic composition, and earth-abundant materials. This review systematically examines fundamental properties, materials classification, and device engineering strategies for chalcogenide-based photovoltaics. Key materials include BaZrS3 systems (>22 % predicted efficiency via machine learning optimization), Ca/Sr-based variants, Hf-compounds with pressure-tunable properties, Sn-based lead-free alternatives, antimony chalcogenides (>10 % experimental efficiency), and Cu/Ag-based quaternaries (CZTS: 13 % certified). Strong metal-chalcogen bonding provides exceptional moisture resistance (>90 % retention after 1000h at 85 % RH) and thermal stability (>300 °C). Advanced architectures including tandem configurations predict >30 % efficiency, while gradient band gap structures achieve 22–25 % through parabolic compositional grading. Critical challenges include scalable synthesis below 300 °C, defect density control (<1015 cm−3), and interface engineering (recombination velocity <103 cm/s). Novel transport materials, metal-organic frameworks and phthalocyanines, offer 4–6 % efficiency improvements. Chalcogenide perovskites provide clear pathways toward stable, efficient, and sustainable next-generation photovoltaics.
{"title":"Chalcogenide perovskites for next-generation solar cells: Progress, challenges, and future perspectives","authors":"K. Umamaheswari , P. Pattunnarajam , T. Bhargava Ramu , R. Balasubramaniyan , P.S. Gomathi , V. Samuthira Pandi","doi":"10.1016/j.micrna.2025.208526","DOIUrl":"10.1016/j.micrna.2025.208526","url":null,"abstract":"<div><div>Chalcogenide perovskites have emerged as promising alternatives to halide perovskite solar cells, offering superior stability, non-toxic composition, and earth-abundant materials. This review systematically examines fundamental properties, materials classification, and device engineering strategies for chalcogenide-based photovoltaics. Key materials include BaZrS<sub>3</sub> systems (>22 % predicted efficiency via machine learning optimization), Ca/Sr-based variants, Hf-compounds with pressure-tunable properties, Sn-based lead-free alternatives, antimony chalcogenides (>10 % experimental efficiency), and Cu/Ag-based quaternaries (CZTS: 13 % certified). Strong metal-chalcogen bonding provides exceptional moisture resistance (>90 % retention after 1000h at 85 % RH) and thermal stability (>300 °C). Advanced architectures including tandem configurations predict >30 % efficiency, while gradient band gap structures achieve 22–25 % through parabolic compositional grading. Critical challenges include scalable synthesis below 300 °C, defect density control (<10<sup>15</sup> cm<sup>−3</sup>), and interface engineering (recombination velocity <10<sup>3</sup> cm/s). Novel transport materials, metal-organic frameworks and phthalocyanines, offer 4–6 % efficiency improvements. Chalcogenide perovskites provide clear pathways toward stable, efficient, and sustainable next-generation photovoltaics.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208526"},"PeriodicalIF":3.0,"publicationDate":"2025-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145799781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-13DOI: 10.1016/j.micrna.2025.208522
Aruna Dore, M. Manikandan
Optimization of Electron Blocking Layer (EBL) composition in Aluminum Gallium Nitride (AlGaN) Ultraviolet (UV) Light-Emitting Diodes (LEDs) represents an advanced device design framework where EBL properties are tuned to improve carrier injection, radiative recombination, and overall device efficiency. This setup supports the interaction between material composition, thickness, and LED performance parameters through predictive and optimization strategies; however, Internal Quantum Efficiency (IQE), Hole Injection Efficiency (HIE), carrier confinement efficiency, and efficiency droop may be suboptimal due to nonlinear dependencies and uncertainties in the EBL design space, potentially limiting overall device performance. Moreover, inefficient design selection, reduced optical output, and inaccurate performance predictions can further hinder the effectiveness of UV LEDs. To overcome these issues, this manuscript proposes a method for EBL optimization in AlGaN UV LEDs. The suggested hybrid technique combines Fuzzy Embedded Recurrent Neural Network (FERNN) and Spider-Tailed Horned Viper Optimization (STHVO), and is therefore called the FERNN-STHVO technique. The primary goal of the suggested technique is to maximize IQE, HIE, and carrier confinement efficiency, while minimizing efficiency droop. The FERNN predicts key LED performance parameters by capturing nonlinear relationships and handling uncertainties in the input design space. The STHVO tunes the FERNN weight parameter to achieve optimal device performance. By then, MATLAB is used to develop the suggested method, and it is contrasted with other current methods such as Extreme Gradient Boosting (XGBoost), Convolutional Neural Network (CNN), and JAYA Optimization Algorithm (JAYA). The suggested FERNN-STHVO method improves IQE to 53 %, enhances HIE to 72 %, and increases carrier confinement efficiency to 69 %. It also achieves a substantially higher efficiency droop reduction of 48 % and reduces leakage current by 56 %, thereby enabling balanced carrier dynamics, supporting stronger radiative recombination, and enhancing the overall performance and stability of AlGaN UV LEDs.
{"title":"Optimization of electron blocking layer composition in AlGaN ultraviolet light-emitting diodes using fuzzy embedded RNN and spider-tailed horned viper algorithm","authors":"Aruna Dore, M. Manikandan","doi":"10.1016/j.micrna.2025.208522","DOIUrl":"10.1016/j.micrna.2025.208522","url":null,"abstract":"<div><div>Optimization of Electron Blocking Layer (EBL) composition in Aluminum Gallium Nitride (AlGaN) Ultraviolet (UV) Light-Emitting Diodes (LEDs) represents an advanced device design framework where EBL properties are tuned to improve carrier injection, radiative recombination, and overall device efficiency. This setup supports the interaction between material composition, thickness, and LED performance parameters through predictive and optimization strategies; however, Internal Quantum Efficiency (IQE), Hole Injection Efficiency (HIE), carrier confinement efficiency, and efficiency droop may be suboptimal due to nonlinear dependencies and uncertainties in the EBL design space, potentially limiting overall device performance. Moreover, inefficient design selection, reduced optical output, and inaccurate performance predictions can further hinder the effectiveness of UV LEDs. To overcome these issues, this manuscript proposes a method for EBL optimization in AlGaN UV LEDs. The suggested hybrid technique combines Fuzzy Embedded Recurrent Neural Network (FERNN) and Spider-Tailed Horned Viper Optimization (STHVO), and is therefore called the FERNN-STHVO technique. The primary goal of the suggested technique is to maximize IQE, HIE, and carrier confinement efficiency, while minimizing efficiency droop. The FERNN predicts key LED performance parameters by capturing nonlinear relationships and handling uncertainties in the input design space. The STHVO tunes the FERNN weight parameter to achieve optimal device performance. By then, MATLAB is used to develop the suggested method, and it is contrasted with other current methods such as Extreme Gradient Boosting (XGBoost), Convolutional Neural Network (CNN), and JAYA Optimization Algorithm (JAYA). The suggested FERNN-STHVO method improves IQE to 53 %, enhances HIE to 72 %, and increases carrier confinement efficiency to 69 %. It also achieves a substantially higher efficiency droop reduction of 48 % and reduces leakage current by 56 %, thereby enabling balanced carrier dynamics, supporting stronger radiative recombination, and enhancing the overall performance and stability of AlGaN UV LEDs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208522"},"PeriodicalIF":3.0,"publicationDate":"2025-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145799764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work aims to comprehensively analyze the performance of the multi-bridge core insulator embedded Nanosheet field effect transistor (MBCI-NSFET) using a properly calibrated 3-D Sentaurus TCAD tool. The proposed device consists of a multi-stacked nanosheet with a core SiO2 insulator embedded within the sheet to enhance the device's performance. Firstly, all important DC characteristics of the MBCI-NSFET, such as drain-induced barrier lowering (DIBL), Subthreshold Swing (SS), on-current (ION), off-current (IOFF), switching ratio (ION/IOFF), and threshold voltage (Vth), have been analyzed at the device level. It is observed that the MBCI-NSFET with three stacks (S3) provides ION in the order of 10−5 A, IOFF of 10−11 A, DIBL of 76.9230 mV/V, SS of 74.352 mV/dec, threshold voltage (Vth) of 0.255 V, and a higher switching ratio (ION/IOFF) of 106, respectively. Moreover, the FOM characteristics of the one (S1), two (S2), and three (S3) stacked MBCI-NSFETs have also been discussed. In addition, the small-signal characteristics like intrinsic delay (τ), intrinsic gain (Av0), cut-off frequency (fT), and transconductance (gm) values of the three (S3) stacked MBCI-NSFETs have been investigated and found to be 1.91333 psec, 83.3683, 136.124 GHz, and 0.113407 mS, respectively. Furthermore, the MBCI-NSFET has also been implemented in circuit design, such as inverter circuits, to assess their DC, transient performance, and VTC curve. The findings provide deep insight into the MBCI-NSFET operation and demonstrate the MBCI-NSFET's suitability at both the device and circuit levels for advanced technology nodes.
{"title":"Performance benchmarking of multi-bridge core-insulator NSFETs for advanced technology nodes: A device to circuit level analysis","authors":"Khongbantabam Mamota Devi , Arun Kumar , Pukhrambam Puspa Devi , Pramod Kumar Tiwari","doi":"10.1016/j.micrna.2025.208525","DOIUrl":"10.1016/j.micrna.2025.208525","url":null,"abstract":"<div><div>This work aims to comprehensively analyze the performance of the multi-bridge core insulator embedded Nanosheet field effect transistor (MBCI-NSFET) using a properly calibrated 3-D Sentaurus TCAD tool. The proposed device consists of a multi-stacked nanosheet with a core SiO<sub>2</sub> insulator embedded within the sheet to enhance the device's performance. Firstly, all important DC characteristics of the MBCI-NSFET, such as drain-induced barrier lowering (DIBL), Subthreshold Swing (SS), on-current (I<sub>ON</sub>), off-current (I<sub>OFF</sub>), switching ratio (I<sub>ON</sub>/I<sub>OFF</sub>), and threshold voltage (V<sub>th</sub>), have been analyzed at the device level. It is observed that the MBCI-NSFET with three stacks (S<sub>3</sub>) provides I<sub>ON</sub> in the order of 10<sup>−5</sup> A, I<sub>OFF</sub> of 10<sup>−11</sup> A, DIBL of 76.9230 mV/V, SS of 74.352 mV/dec, threshold voltage (V<sub>th</sub>) of 0.255 V, and a higher switching ratio (I<sub>ON</sub>/I<sub>OFF</sub>) of 10<sup>6</sup>, respectively. Moreover, the FOM characteristics of the one (S<sub>1</sub>), two (S<sub>2</sub>), and three (S<sub>3</sub>) stacked MBCI-NSFETs have also been discussed. In addition, the small-signal characteristics like intrinsic delay (τ), intrinsic gain (A<sub>v0</sub>), cut-off frequency (f<sub>T</sub>), and transconductance (g<sub>m</sub>) values of the three (S<sub>3</sub>) stacked MBCI-NSFETs have been investigated and found to be 1.91333 psec, 83.3683, 136.124 GHz, and 0.113407 mS, respectively. Furthermore, the MBCI-NSFET has also been implemented in circuit design, such as inverter circuits, to assess their DC, transient performance, and VTC curve. The findings provide deep insight into the MBCI-NSFET operation and demonstrate the MBCI-NSFET's suitability at both the device and circuit levels for advanced technology nodes.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208525"},"PeriodicalIF":3.0,"publicationDate":"2025-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145799785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-12DOI: 10.1016/j.micrna.2025.208517
H.A. Qayyum
Janus antiferromagnetic systems intrinsically exhibit spin splitting in the absence of net magnetization due to their atomic asymmetry, and hence offer exciting prospects for various spintronics applications. Here, we employ density functional theory calculations to investigate the electronic properties of Janus SMnSe and its heterostructure with graphene. The broken inversion symmetry introduced by the non-symmetrical chalcogenide environment around Mn atoms leads to pronounced spin splitting even in the absence of spin–orbit coupling. Exploiting this spin-polarized nature, we further explore SMnSe as a channel material interfaced with a graphene electrode. The SMnSe/graphene interface effectively reduces band bending by lowering the work function, thereby facilitating carrier injection. Our findings demonstrate that spin splitting in Janus SMnSe, induced by atomic asymmetry, can be harnessed to design intrinsically low Schottky-barrier based current-in-plane devices, with barrier height tunable via interlayer distance modulation.
{"title":"Engineering intrinsically low Schottky barrier via spin-driven band alignment in Janus SMnSe/graphene heterostructure","authors":"H.A. Qayyum","doi":"10.1016/j.micrna.2025.208517","DOIUrl":"10.1016/j.micrna.2025.208517","url":null,"abstract":"<div><div>Janus antiferromagnetic systems intrinsically exhibit spin splitting in the absence of net magnetization due to their atomic asymmetry, and hence offer exciting prospects for various spintronics applications. Here, we employ density functional theory calculations to investigate the electronic properties of Janus SMnSe and its heterostructure with graphene. The broken inversion symmetry introduced by the non-symmetrical chalcogenide environment around Mn atoms leads to pronounced spin splitting even in the absence of spin–orbit coupling. Exploiting this spin-polarized nature, we further explore SMnSe as a channel material interfaced with a graphene electrode. The SMnSe/graphene interface effectively reduces band bending by lowering the work function, thereby facilitating carrier injection. Our findings demonstrate that spin splitting in Janus SMnSe, induced by atomic asymmetry, can be harnessed to design intrinsically low Schottky-barrier based current-in-plane devices, with barrier height tunable via interlayer distance modulation.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208517"},"PeriodicalIF":3.0,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145799784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-12DOI: 10.1016/j.micrna.2025.208524
Himanshu Ranjan Das , Haraprasad Mondal , Mohammad Javad Maleki , Sandip Swarnakar
Phase change materials (PCMs) are gaining attention as effective active components for use in photonic platforms, owing to their compatibility with CMOS fabrication processes and the ability to alter their optical properties through external stimuli. This paper presents the design and analysis of a plasmonic switch that incorporates indium-tin-oxide (ITO) and germanium-antimony-selenium-telluride (GSST). Both materials play a crucial role in enhancing the performance of the investigated plasmonic switch. The plasmonic switch shows exceptional performance in terms of insertion loss (IL) and extinction ratio (ER). An IL of 0.054 dB/m and 0.035 dB/m was observed for the ITO and GSST-based plasmonic switch at the On-state of the device. The combined use of both materials in the GSST-ITO-based plasmonic switch has also been investigated, resulting in an ER of 17.97 dB/m and a figure-of-merit (FOM) of 337.87. The device’s innovative structural design provides a low-loss and energy-efficient solution for plasmonic switches used in photonic applications. These plasmonic switches show great potential for advancing photonic applications.
{"title":"Dynamically tunable optical absorption in ITO and GSST-based plasmonic switch for next-gen photonics","authors":"Himanshu Ranjan Das , Haraprasad Mondal , Mohammad Javad Maleki , Sandip Swarnakar","doi":"10.1016/j.micrna.2025.208524","DOIUrl":"10.1016/j.micrna.2025.208524","url":null,"abstract":"<div><div>Phase change materials (PCMs) are gaining attention as effective active components for use in photonic platforms, owing to their compatibility with CMOS fabrication processes and the ability to alter their optical properties through external stimuli. This paper presents the design and analysis of a plasmonic switch that incorporates indium-tin-oxide (ITO) and germanium-antimony-selenium-telluride (GSST). Both materials play a crucial role in enhancing the performance of the investigated plasmonic switch. The plasmonic switch shows exceptional performance in terms of insertion loss (IL) and extinction ratio (ER). An IL of 0.054 dB/<span><math><mi>μ</mi></math></span>m and 0.035 dB/<span><math><mi>μ</mi></math></span>m was observed for the ITO and GSST-based plasmonic switch at the On-state of the device. The combined use of both materials in the GSST-ITO-based plasmonic switch has also been investigated, resulting in an ER of 17.97 dB/<span><math><mi>μ</mi></math></span>m and a figure-of-merit (FOM) of 337.87. The device’s innovative structural design provides a low-loss and energy-efficient solution for plasmonic switches used in photonic applications. These plasmonic switches show great potential for advancing photonic applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208524"},"PeriodicalIF":3.0,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145750086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-12DOI: 10.1016/j.micrna.2025.208519
Kexin Ren, Zhiyuan Liu, Haicheng Cao, Tingang Liu, Zixian Jiang, Mingtao Nong, Zuojian Pan, Yi Lu, Xiaohang Li (Member,Ieee)
Far-ultraviolet-C (Far-UVC) AlGaN-based light-emitting diodes (LEDs) are promising candidates for in-vivo disinfection due to their germicidal efficacy and minimal harm to human tissue. However, their widespread application is limited by low efficiency. This work systematically investigates the impact of aluminum composition in the quantum barriers (QBs) and hole injection layer (HIL) on device performance through numerical simulations. A non-monotonic trend of internal quantum efficiency (IQE) dependent on Al content in the QBs is observed. Initially, IQE improves as QB Al content increases due to enhanced carrier confinement, then declines because of increased electron leakage, and subsequently rises again at higher Al compositions where electron overflow is suppressed. This behavior highlights the critical role of QB composition in carrier transport. In addition, the influence of HIL Al composition on wall-plug efficiency (WPE) is examined. The WPE exhibits a peak with Al0.9Ga0.1N HIL, attributed to a trade-off between hole injection barriers at the p-GaN/HIL and HIL/EBL interfaces. These findings offer valuable insights for the design of high-efficiency far-UVC LEDs and provide guidance for their implementation in disinfection technologies.
远紫外- c (Far-UVC)海藻基发光二极管(led)由于其杀菌效果和对人体组织的危害最小而成为体内消毒的有希望的候选者。然而,效率低限制了它们的广泛应用。本文通过数值模拟系统地研究了量子势垒(qb)和空穴注入层(HIL)中铝成分对器件性能的影响。观察到qb中Al含量对内量子效率(IQE)的非单调变化趋势。最初,IQE随着QB Al含量的增加而提高,这是由于载流子约束的增强,然后由于电子泄漏的增加而下降,随后在高Al成分下,电子溢出被抑制,IQE再次上升。这种行为突出了QB组成在载流子运输中的关键作用。此外,还考察了HIL Al成分对壁塞效率(WPE)的影响。由于p-GaN/HIL和HIL/EBL界面的空穴注入势垒之间的权衡,WPE在Al0.9Ga0.1N HIL时出现峰值。这些发现为高效远紫外线led的设计提供了有价值的见解,并为其在消毒技术中的实施提供了指导。
{"title":"Structural strategies for high-efficiency AlGaN-based Far-UVC LEDs","authors":"Kexin Ren, Zhiyuan Liu, Haicheng Cao, Tingang Liu, Zixian Jiang, Mingtao Nong, Zuojian Pan, Yi Lu, Xiaohang Li (Member,Ieee)","doi":"10.1016/j.micrna.2025.208519","DOIUrl":"10.1016/j.micrna.2025.208519","url":null,"abstract":"<div><div>Far-ultraviolet-C (Far-UVC) AlGaN-based light-emitting diodes (LEDs) are promising candidates for in-vivo disinfection due to their germicidal efficacy and minimal harm to human tissue. However, their widespread application is limited by low efficiency. This work systematically investigates the impact of aluminum composition in the quantum barriers (QBs) and hole injection layer (HIL) on device performance through numerical simulations. A non-monotonic trend of internal quantum efficiency (IQE) dependent on Al content in the QBs is observed. Initially, IQE improves as QB Al content increases due to enhanced carrier confinement, then declines because of increased electron leakage, and subsequently rises again at higher Al compositions where electron overflow is suppressed. This behavior highlights the critical role of QB composition in carrier transport. In addition, the influence of HIL Al composition on wall-plug efficiency (WPE) is examined. The WPE exhibits a peak with Al<sub>0.9</sub>Ga<sub>0.1</sub>N HIL, attributed to a trade-off between hole injection barriers at the p-GaN/HIL and HIL/EBL interfaces. These findings offer valuable insights for the design of high-efficiency far-UVC LEDs and provide guidance for their implementation in disinfection technologies.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208519"},"PeriodicalIF":3.0,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145799778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}