Micro and Nanostructures最新文献_第7页

Influence of anodizing electric-field on the physical characteristics of NiO nanoparticles-decorated Cu2O nanoporous for nanoelectronics 阳极氧化电场对纳米氧化镍修饰Cu2O纳米孔材料物理特性的影响

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-12-18 DOI: 10.1016/j.micrna.2025.208530

Emad H. Hussein, Jasim S. Alikhan

The physical characteristics of cupric oxide (Cu₂O) nanoporous modulated with nickel oxide nanoparticles (NiO NPs) for electronics and nanoelectronics that operate at a certain resonance frequency were investigated. For porous fabrication, copper (Cu) substrates were subjected to a simple electrochemical anodization at a certain electrolyte concentration and time. The anodizing electrical field was purposely adjusted at 2.5, 3.75, and 5 V/cm to induce nano-porosity. Then, a nanosheet-like porous material with a cracked structure of Cu₂O decorated with NiO NPs was imaged. Photoluminescence (PL) emissions at around 297 nm and 447 nm were recorded, indicating the ability to exploit a long range of the ultraviolet–visible (UV–Vis) light. The electrical conductivity of Cu₂O nanostructures (NS) was modified by decorating them with NiO NPs. Accordingly, two behaviors in the alternating electrical conductivity (σ_AC) against frequency were revealed, with 0.4 S/cm at 20 Hz and 0.02 S/cm at 100 kHz. While the conductivity decreases with frequency, an anomalous behavior was observed in which high-conductivity Gaussian peaks were seen at a resonance frequency of about 1 kHz in the heterostructures (HS) prepared at a low electrical field. Thus, the anodized field may practically direct the nanostructures in the nanoelectronic route to operate in a specific frequency region.

研究了以氧化镍纳米粒子调制的氧化铜纳米孔材料在一定谐振频率下的物理特性。对于多孔材料的制备，在一定的电解液浓度和时间下对铜（Cu）衬底进行简单的电化学阳极氧化。阳极氧化电场调节为2.5、3.75和5 V/cm，诱导纳米孔隙度。然后，成像了一种具有NiO NPs修饰的Cu2O裂纹结构的纳米片状多孔材料。记录了297 nm和447 nm左右的光致发光（PL）发射，表明能够利用长范围的紫外-可见（UV-Vis）光。用NiO纳米粒子修饰Cu2O纳米结构（NS）的电导率。结果表明，交变电导率（σAC）随频率的变化规律为：20 Hz时为0.4 S/cm， 100 kHz时为0.02 S/cm。在低电场条件下制备的异质结构（HS），其电导率随频率的增加而降低，但在1 kHz左右的共振频率处出现了高电导率的高斯峰。因此，阳极化场实际上可以指导纳米电子路径中的纳米结构在特定频率区域内工作。

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引用次数: 0

Computational investigation of trapezoidal channel profiles in Gate-All-Around (GAA) FETs for digital performance 栅极全能场效应管（GAA）数字性能的梯形通道分布计算研究

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-12-17 DOI: 10.1016/j.micrna.2025.208523

Rohan Raj , Sandeep Moparthi , Arun Kumar , P.K. Tiwari , P.S.T.N. Srinivas

The present study focuses on the performance improvement of an inverter having trapezoidal channel profiles using the SYNOPSYS TCAD simulation tool. A p-type Gate-All-Around (GAA) MOSFET with six channels and an n-type GAA MOSFET with three channels are designed to have matching transfer and output characteristics which are essential for optimizing digital performance. The matching of the characteristics is achieved by carefully regulating design parameters such as work function, channel doping concentration, source/drain doping concentration. The effect of process-induced inclination in the channel region on inverter performance is a crucial component of the study. The study measures the impact of angle from 0°to 20°with step size of 5°on inverter functioning with three types of gate oxide. The results help to optimize future nanoscale devices by shedding light on the heterogeneity in (GAA) transistors caused by manufacturing.

本研究的重点是利用SYNOPSYS TCAD仿真工具对具有梯形通道轮廓的逆变器进行性能改进。具有六个通道的p型GAA MOSFET和具有三个通道的n型GAA MOSFET具有匹配的传输和输出特性，这对于优化数字性能至关重要。通过仔细调节功函数、通道掺杂浓度、源/漏掺杂浓度等设计参数来实现特性的匹配。通道区域过程诱导的倾斜对逆变器性能的影响是该研究的重要组成部分。该研究测量了从0°到20°，步长为5°的角度对三种类型栅极氧化物的逆变器功能的影响。研究结果揭示了GAA晶体管在制造过程中的不均一性，有助于优化未来的纳米级器件。

引用次数: 0

Novel bifunctional ZrV2O7@g-C3N4/rGO electrode with synergistic interface engineering for high-efficiency hydrogen evolution and advanced hybrid supercapacitor in alkaline media 具有协同界面工程的新型双功能ZrV2O7@g-C3N4/rGO电极，用于碱性介质中高效析氢和先进的混合超级电容器

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-12-16 DOI: 10.1016/j.micrna.2025.208528

Saba Khalil , Muneerah Alomar , Muhammad Ali Hamza Shahbaz , Mohammed Jalalah , Amir Muhammad Afzal , M.A. Diab , Farid A. Harraz

Hydrogen is emerging as a promising clean and sustainable energy carrier for energy generation and storage via electrolysis. The design of multifunctional electrodes that can catalyze and store energy is a significant issue. This paper presents a hierarchically engineered composite electrode incorporating a combination of redox-active species based binary transition metal oxide (ZrV₂O₇), with a conductive structure of g-C₃N₄ and rGO to provide an improved capacity of charge-storage. The optimized design facilitates fast diffusion of ions and charge transfer as well as stable electrochemical cycling with the resultant superior energy-storage capability and consistent HER electrocatalytic splitting capability. The ZrV₂O₇@g-C₃N₄–electrode delivers the highest specific capacity of 1123 Cg^-1 in Hg/HgO referencing cell system. The ZrV₂O₇@g-C₃N₄/rGO//AC-hybrid device presents the tunable charge storage response, with 35 Wh kg⁻¹ and 2559 W kg⁻¹, of 223 Cg^-1 of energy density (E_d), Power density (P_d), and specific capacity measurements. The ZrV₂O₇@g-C₃N₄–electrode provides enhanced HER kinetics with an overpotential of 57 mV and the Tafel slope of 61 mV.dec⁻¹, and outstanding cycling stability and durability. The efficient electrocatalytic response of the present ZrV₂O₇@g-C₃N₄/rGO electrode presents it as a hybrid, like platform, having a promising approach to next-generation hybrid devices in which energy conversion, high energy density, and fast power delivery can be simultaneously attained.

氢正在成为一种有前途的清洁和可持续的能源载体，用于通过电解发电和储存能源。能够催化和储存能量的多功能电极的设计是一个重要的问题。本文提出了一种分层设计的复合电极，该电极结合了氧化还原活性物质二元过渡金属氧化物（ZrV2O7），具有g-C3N4和rGO的导电结构，以提供改进的电荷存储能力。优化后的设计促进了离子的快速扩散和电荷转移，以及稳定的电化学循环，从而获得了卓越的储能能力和一致的HER电催化分裂能力。ZrV2O7@g-C3N4 -电极在Hg/HgO基准电池系统中提供最高的1123 Cg-1比容量。ZrV2O7@g-C3N4/rGO//交流混合装置具有可调的电荷存储响应，能量密度（Ed）、功率密度（Pd）和比容量测量值分别为35 Wh kg -1和2559 W kg -1。ZrV2O7@g-C3N4 -电极提供了增强的HER动力学，过电位为57 mV， Tafel斜率为61 mV.dec−1，并且具有出色的循环稳定性和耐久性。目前ZrV2O7@g-C3N4/rGO电极的高效电催化响应表明它是一个混合平台，具有下一代混合设备的有前途的方法，其中能量转换，高能量密度和快速电力输送可以同时实现。

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引用次数: 0

Next-generation nanostructured graphene–Cr–fe3O4–ZrO2 solar absorber: AI-driven performance prediction and optimization for renewable energy applications 下一代纳米结构石墨烯- cr - fe3o4 - zro2太阳能吸收剂：人工智能驱动的可再生能源应用性能预测和优化

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-12-14 DOI: 10.1016/j.micrna.2025.208527

Ammar Armghan , Bo Bo Han , Ashish Baldania , Khaled Aliqab , Meshari Alsharari , Yogesh Sharma , Shobhit K. Patel

Solar energy is essential for driving the transition toward a clean and sustainable energy cycle. Research on solar absorbers is a key focus in solar energy systems, as it directly contributes to improved energy harvesting performance. The current design with the material composition of the Cr–Fe₃O₄–ZrO₂ and a graphene nanostructure is applied in the investigation of the current solar structure. The current absorber can work in the ultra-wideband (UV-MIR) spectra and with an efficient rate of 94.66 % for 2800 nm. Moreover, the current solar absorber can reach 97.38 % for 1000 nm with the proficient square-resonator design. We distributed the machine learning section in the current work to describe the predicted and actual value output in each parameter with the linear regression method. With the good efficiency of radiation, the current research can be used as a renewable energy option in hatcheries and dairies, swimming pool warming, the agricultural sector, health clubs, boiler feed, and so on.

太阳能对于推动向清洁和可持续能源循环过渡至关重要。太阳能吸收体的研究是太阳能系统研究的一个热点，它直接影响着太阳能收集性能的提高。目前设计的材料成分为Cr-Fe3O4-ZrO2和石墨烯纳米结构，应用于当前太阳能结构的研究。电流吸收剂可以在超宽带（UV-MIR）光谱中工作，在2800 nm的效率为94.66%。此外，通过熟练的方形谐振腔设计，目前的太阳能吸收器在1000 nm范围内可达到97.38%。我们在当前的工作中分配了机器学习部分，用线性回归的方法描述每个参数的预测值和实际值输出。凭借良好的辐射效率，目前的研究可以作为一种可再生能源选择，用于孵化场和奶牛场、游泳池供暖、农业部门、健身俱乐部、锅炉饲料等。

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引用次数: 0

Chalcogenide perovskites for next-generation solar cells: Progress, challenges, and future perspectives 下一代太阳能电池用硫系钙钛矿：进展、挑战和未来展望

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-12-13 DOI: 10.1016/j.micrna.2025.208526

K. Umamaheswari , P. Pattunnarajam , T. Bhargava Ramu , R. Balasubramaniyan , P.S. Gomathi , V. Samuthira Pandi

Chalcogenide perovskites have emerged as promising alternatives to halide perovskite solar cells, offering superior stability, non-toxic composition, and earth-abundant materials. This review systematically examines fundamental properties, materials classification, and device engineering strategies for chalcogenide-based photovoltaics. Key materials include BaZrS₃ systems (>22 % predicted efficiency via machine learning optimization), Ca/Sr-based variants, Hf-compounds with pressure-tunable properties, Sn-based lead-free alternatives, antimony chalcogenides (>10 % experimental efficiency), and Cu/Ag-based quaternaries (CZTS: 13 % certified). Strong metal-chalcogen bonding provides exceptional moisture resistance (>90 % retention after 1000h at 85 % RH) and thermal stability (>300 °C). Advanced architectures including tandem configurations predict >30 % efficiency, while gradient band gap structures achieve 22–25 % through parabolic compositional grading. Critical challenges include scalable synthesis below 300 °C, defect density control (<10¹⁵ cm⁻³), and interface engineering (recombination velocity <10³ cm/s). Novel transport materials, metal-organic frameworks and phthalocyanines, offer 4–6 % efficiency improvements. Chalcogenide perovskites provide clear pathways toward stable, efficient, and sustainable next-generation photovoltaics.

硫系钙钛矿已成为卤化物钙钛矿太阳能电池的有前途的替代品，具有优越的稳定性、无毒成分和地球丰富的材料。本文系统地研究了硫族化合物基光伏电池的基本特性、材料分类和器件工程策略。关键材料包括BaZrS3系统（通过机器学习优化预测效率为22%）、Ca/ sr基变体、具有压力可调特性的hf化合物、sn基无铅替代品、硫系锑（实验效率为10%）和Cu/ ag基季元化合物（CZTS: 13%认证）。强大的金属-硫键结合提供了卓越的防潮性能（在85% RH下1000小时后保持90%）和热稳定性（300°C）。包括串联结构在内的先进结构预计效率为30%，而梯度带隙结构通过抛物线成分分级可达到22 - 25%。关键挑战包括300°C以下的可扩展合成、缺陷密度控制（1015 cm - 3）和界面工程（复合速度103 cm/s）。新型运输材料，金属有机框架和酞菁，提供4 - 6%的效率提高。硫系钙钛矿为稳定、高效和可持续的下一代光伏发电提供了明确的途径。

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引用次数: 0

Optimization of electron blocking layer composition in AlGaN ultraviolet light-emitting diodes using fuzzy embedded RNN and spider-tailed horned viper algorithm 基于模糊嵌入RNN和蜘蛛尾角毒蛇算法的AlGaN紫外发光二极管电子阻挡层组成优化

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-12-13 DOI: 10.1016/j.micrna.2025.208522

Aruna Dore, M. Manikandan

Optimization of Electron Blocking Layer (EBL) composition in Aluminum Gallium Nitride (AlGaN) Ultraviolet (UV) Light-Emitting Diodes (LEDs) represents an advanced device design framework where EBL properties are tuned to improve carrier injection, radiative recombination, and overall device efficiency. This setup supports the interaction between material composition, thickness, and LED performance parameters through predictive and optimization strategies; however, Internal Quantum Efficiency (IQE), Hole Injection Efficiency (HIE), carrier confinement efficiency, and efficiency droop may be suboptimal due to nonlinear dependencies and uncertainties in the EBL design space, potentially limiting overall device performance. Moreover, inefficient design selection, reduced optical output, and inaccurate performance predictions can further hinder the effectiveness of UV LEDs. To overcome these issues, this manuscript proposes a method for EBL optimization in AlGaN UV LEDs. The suggested hybrid technique combines Fuzzy Embedded Recurrent Neural Network (FERNN) and Spider-Tailed Horned Viper Optimization (STHVO), and is therefore called the FERNN-STHVO technique. The primary goal of the suggested technique is to maximize IQE, HIE, and carrier confinement efficiency, while minimizing efficiency droop. The FERNN predicts key LED performance parameters by capturing nonlinear relationships and handling uncertainties in the input design space. The STHVO tunes the FERNN weight parameter to achieve optimal device performance. By then, MATLAB is used to develop the suggested method, and it is contrasted with other current methods such as Extreme Gradient Boosting (XGBoost), Convolutional Neural Network (CNN), and JAYA Optimization Algorithm (JAYA). The suggested FERNN-STHVO method improves IQE to 53 %, enhances HIE to 72 %, and increases carrier confinement efficiency to 69 %. It also achieves a substantially higher efficiency droop reduction of 48 % and reduces leakage current by 56 %, thereby enabling balanced carrier dynamics, supporting stronger radiative recombination, and enhancing the overall performance and stability of AlGaN UV LEDs.

氮化铝镓（AlGaN）紫外（UV）发光二极管（led）中电子阻挡层（EBL）组成的优化代表了一种先进的器件设计框架，其中EBL性能被调整以提高载流子注入、辐射复合和整体器件效率。该装置通过预测和优化策略支持材料成分、厚度和LED性能参数之间的相互作用；然而，由于EBL设计空间中的非线性依赖关系和不确定性，内部量子效率（IQE）、空穴注入效率（HIE）、载流子约束效率和效率下降可能不是最优的，这可能会限制器件的整体性能。此外，低效的设计选择、光输出降低和不准确的性能预测会进一步阻碍UV led的有效性。为了克服这些问题，本文提出了一种AlGaN UV led的EBL优化方法。所提出的混合技术将模糊嵌入递归神经网络（FERNN）和蜘蛛尾角蝰优化（STHVO）相结合，因此称为FERNN-STHVO技术。所建议的技术的主要目标是最大化IQE、HIE和载流子限制效率，同时最小化效率下降。FERNN通过捕获非线性关系和处理输入设计空间中的不确定性来预测关键LED性能参数。STHVO调整了fern的权重参数，以达到最佳的器件性能。然后，利用MATLAB对该方法进行开发，并与现有的极端梯度增强（XGBoost）、卷积神经网络（CNN）、JAYA优化算法（JAYA）等方法进行对比。该方法将IQE提高到53%，将HIE提高到72%，将载流子约束效率提高到69%。它还实现了更高的效率下降48%，减少泄漏电流56%，从而实现平衡载流子动态，支持更强的辐射重组，并提高AlGaN UV led的整体性能和稳定性。

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引用次数: 0

Performance benchmarking of multi-bridge core-insulator NSFETs for advanced technology nodes: A device to circuit level analysis 先进技术节点的多桥芯绝缘子nsfet性能基准测试：从器件到电路级分析

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-12-13 DOI: 10.1016/j.micrna.2025.208525

Khongbantabam Mamota Devi , Arun Kumar , Pukhrambam Puspa Devi , Pramod Kumar Tiwari

This work aims to comprehensively analyze the performance of the multi-bridge core insulator embedded Nanosheet field effect transistor (MBCI-NSFET) using a properly calibrated 3-D Sentaurus TCAD tool. The proposed device consists of a multi-stacked nanosheet with a core SiO₂ insulator embedded within the sheet to enhance the device's performance. Firstly, all important DC characteristics of the MBCI-NSFET, such as drain-induced barrier lowering (DIBL), Subthreshold Swing (SS), on-current (I_ON), off-current (I_OFF), switching ratio (I_ON/I_OFF), and threshold voltage (V_th), have been analyzed at the device level. It is observed that the MBCI-NSFET with three stacks (S₃) provides I_ON in the order of 10⁻⁵ A, I_OFF of 10⁻¹¹ A, DIBL of 76.9230 mV/V, SS of 74.352 mV/dec, threshold voltage (V_th) of 0.255 V, and a higher switching ratio (I_ON/I_OFF) of 10⁶, respectively. Moreover, the FOM characteristics of the one (S₁), two (S₂), and three (S₃) stacked MBCI-NSFETs have also been discussed. In addition, the small-signal characteristics like intrinsic delay (τ), intrinsic gain (A_v0), cut-off frequency (f_T), and transconductance (g_m) values of the three (S₃) stacked MBCI-NSFETs have been investigated and found to be 1.91333 psec, 83.3683, 136.124 GHz, and 0.113407 mS, respectively. Furthermore, the MBCI-NSFET has also been implemented in circuit design, such as inverter circuits, to assess their DC, transient performance, and VTC curve. The findings provide deep insight into the MBCI-NSFET operation and demonstrate the MBCI-NSFET's suitability at both the device and circuit levels for advanced technology nodes.

本工作旨在利用适当校准的三维Sentaurus TCAD工具，全面分析多桥核心绝缘子嵌入式纳米片场效应晶体管（MBCI-NSFET）的性能。该器件由多层纳米片组成，其中嵌入了核心SiO2绝缘体，以提高器件的性能。首先，在器件级分析了MBCI-NSFET的所有重要直流特性，如漏极诱导势垒降低（DIBL）、亚阈值摆幅（SS）、通流（ION）、关流（IOFF）、开关比（ION/IOFF）和阈值电压（Vth）。结果表明，三层MBCI-NSFET （S3）可提供10−5 A的离子、10−11 A的IOFF、76.9230 mV/V的DIBL、74.352 mV/dec的SS、0.255 V的阈值电压和106的高开关比（ION/IOFF）。此外，还讨论了1 （S1）、2 （S2）和3 （S3）堆叠mbci - nsfet的FOM特性。此外，研究了三个（S3）堆叠的mbci - nsfet的小信号特性，如固有延迟（τ）、固有增益（Av0）、截止频率（fT）和跨导（gm）值分别为1.91333 psec、83.3683、136.124 GHz和0.113407 mS。此外，MBCI-NSFET也被应用于电路设计中，例如逆变电路，以评估其直流、暂态性能和VTC曲线。这些发现为MBCI-NSFET的工作提供了深刻的见解，并证明了MBCI-NSFET在器件和电路层面上对先进技术节点的适用性。

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引用次数: 0

Engineering intrinsically low Schottky barrier via spin-driven band alignment in Janus SMnSe/graphene heterostructure 在Janus SMnSe/石墨烯异质结构中，通过自旋驱动的能带对准来设计本质上低肖特基势垒

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-12-12 DOI: 10.1016/j.micrna.2025.208517

H.A. Qayyum

Janus antiferromagnetic systems intrinsically exhibit spin splitting in the absence of net magnetization due to their atomic asymmetry, and hence offer exciting prospects for various spintronics applications. Here, we employ density functional theory calculations to investigate the electronic properties of Janus SMnSe and its heterostructure with graphene. The broken inversion symmetry introduced by the non-symmetrical chalcogenide environment around Mn atoms leads to pronounced spin splitting even in the absence of spin–orbit coupling. Exploiting this spin-polarized nature, we further explore SMnSe as a channel material interfaced with a graphene electrode. The SMnSe/graphene interface effectively reduces band bending by lowering the work function, thereby facilitating carrier injection. Our findings demonstrate that spin splitting in Janus SMnSe, induced by atomic asymmetry, can be harnessed to design intrinsically low Schottky-barrier based current-in-plane devices, with barrier height tunable via interlayer distance modulation.

Janus反铁磁系统由于其原子不对称，在没有净磁化的情况下表现出固有的自旋分裂，因此为各种自旋电子学应用提供了令人兴奋的前景。本文采用密度泛函理论计算研究了Janus SMnSe的电子性质及其与石墨烯的异质结构。在没有自旋-轨道耦合的情况下，锰原子周围的非对称硫系环境所引入的逆对称破缺导致了明显的自旋分裂。利用这种自旋极化性质，我们进一步探索了SMnSe作为与石墨烯电极界面的通道材料。SMnSe/石墨烯界面通过降低功函数有效减少带弯曲，从而促进载流子注入。我们的研究结果表明，由原子不对称引起的Janus SMnSe中的自旋分裂可以用来设计本质上低肖特基势垒的平面电流器件，其势垒高度可以通过层间距离调制来调节。

引用次数: 0

Dynamically tunable optical absorption in ITO and GSST-based plasmonic switch for next-gen photonics 新一代光子学中ITO和gsst等离子体开关的动态可调光吸收

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-12-12 DOI: 10.1016/j.micrna.2025.208524

Himanshu Ranjan Das , Haraprasad Mondal , Mohammad Javad Maleki , Sandip Swarnakar

Phase change materials (PCMs) are gaining attention as effective active components for use in photonic platforms, owing to their compatibility with CMOS fabrication processes and the ability to alter their optical properties through external stimuli. This paper presents the design and analysis of a plasmonic switch that incorporates indium-tin-oxide (ITO) and germanium-antimony-selenium-telluride (GSST). Both materials play a crucial role in enhancing the performance of the investigated plasmonic switch. The plasmonic switch shows exceptional performance in terms of insertion loss (IL) and extinction ratio (ER). An IL of 0.054 dB/

μ

m and 0.035 dB/

μ

m was observed for the ITO and GSST-based plasmonic switch at the On-state of the device. The combined use of both materials in the GSST-ITO-based plasmonic switch has also been investigated, resulting in an ER of 17.97 dB/

μ

m and a figure-of-merit (FOM) of 337.87. The device’s innovative structural design provides a low-loss and energy-efficient solution for plasmonic switches used in photonic applications. These plasmonic switches show great potential for advancing photonic applications.

相变材料（PCMs）由于其与CMOS制造工艺的兼容性以及通过外部刺激改变其光学特性的能力，作为光子平台中使用的有效有源元件而受到关注。本文介绍了一种由氧化铟锡（ITO）和碲化锗锑硒（GSST）组成的等离子开关的设计和分析。这两种材料在提高所研究的等离子体开关的性能方面起着至关重要的作用。等离子开关在插入损耗（IL）和消光比（ER）方面表现出优异的性能。在器件导通状态下，ITO和gsst等离子体开关的IL分别为0.054 dB/μm和0.035 dB/μm。研究了这两种材料在gsst - ito基等离子体开关中的结合使用，得到了17.97 dB/μm的ER和337.87的品质因数（FOM）。该器件的创新结构设计为光子应用中使用的等离子开关提供了低损耗和节能的解决方案。这些等离子体开关在推进光子应用方面显示出巨大的潜力。

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引用次数: 0

Structural strategies for high-efficiency AlGaN-based Far-UVC LEDs 高效海藻基远紫外线led的结构策略

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2025-12-12 DOI: 10.1016/j.micrna.2025.208519

Kexin Ren, Zhiyuan Liu, Haicheng Cao, Tingang Liu, Zixian Jiang, Mingtao Nong, Zuojian Pan, Yi Lu, Xiaohang Li (Member,Ieee)

Far-ultraviolet-C (Far-UVC) AlGaN-based light-emitting diodes (LEDs) are promising candidates for in-vivo disinfection due to their germicidal efficacy and minimal harm to human tissue. However, their widespread application is limited by low efficiency. This work systematically investigates the impact of aluminum composition in the quantum barriers (QBs) and hole injection layer (HIL) on device performance through numerical simulations. A non-monotonic trend of internal quantum efficiency (IQE) dependent on Al content in the QBs is observed. Initially, IQE improves as QB Al content increases due to enhanced carrier confinement, then declines because of increased electron leakage, and subsequently rises again at higher Al compositions where electron overflow is suppressed. This behavior highlights the critical role of QB composition in carrier transport. In addition, the influence of HIL Al composition on wall-plug efficiency (WPE) is examined. The WPE exhibits a peak with Al_0.9Ga_0.1N HIL, attributed to a trade-off between hole injection barriers at the p-GaN/HIL and HIL/EBL interfaces. These findings offer valuable insights for the design of high-efficiency far-UVC LEDs and provide guidance for their implementation in disinfection technologies.

远紫外- c （Far-UVC）海藻基发光二极管（led）由于其杀菌效果和对人体组织的危害最小而成为体内消毒的有希望的候选者。然而，效率低限制了它们的广泛应用。本文通过数值模拟系统地研究了量子势垒（qb）和空穴注入层（HIL）中铝成分对器件性能的影响。观察到qb中Al含量对内量子效率（IQE）的非单调变化趋势。最初，IQE随着QB Al含量的增加而提高，这是由于载流子约束的增强，然后由于电子泄漏的增加而下降，随后在高Al成分下，电子溢出被抑制，IQE再次上升。这种行为突出了QB组成在载流子运输中的关键作用。此外，还考察了HIL Al成分对壁塞效率（WPE）的影响。由于p-GaN/HIL和HIL/EBL界面的空穴注入势垒之间的权衡，WPE在Al0.9Ga0.1N HIL时出现峰值。这些发现为高效远紫外线led的设计提供了有价值的见解，并为其在消毒技术中的实施提供了指导。

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引用次数: 0