Pub Date : 2011-12-22DOI: 10.1109/ISIEA.2011.6108746
A. N. Fadzilah, M. Rusop
This paper reports on the effect of nitrogen doping of p-type semiconducting amorphous carbon (p-C) films fabricated onto the glass substrate by Aerosol-Assisted Thermal Chemical Vapor Deposition using natural source of camphor oil as the precursor material. From the characterization of the electrical properties using current-voltage (I–V) measurement, I–V graph was modeled. The analyze reveal that conductivity shows an increment in the N2 doped thin film, both in dark and under illumination condition. Other than that, optical and structural properties were also characterized by using UV-VIS-NIR system and Atomic Force Microscopy. The same trend of optical and electrical can be seen when the measurement from the Tauc's plot expose a decreasing value of optical band gap as temperature increase.
{"title":"Effect of nitrogen doping on electrical properties of amorphous carbon thin film prepared by aerosol-assisted thermal CVD","authors":"A. N. Fadzilah, M. Rusop","doi":"10.1109/ISIEA.2011.6108746","DOIUrl":"https://doi.org/10.1109/ISIEA.2011.6108746","url":null,"abstract":"This paper reports on the effect of nitrogen doping of p-type semiconducting amorphous carbon (p-C) films fabricated onto the glass substrate by Aerosol-Assisted Thermal Chemical Vapor Deposition using natural source of camphor oil as the precursor material. From the characterization of the electrical properties using current-voltage (I–V) measurement, I–V graph was modeled. The analyze reveal that conductivity shows an increment in the N2 doped thin film, both in dark and under illumination condition. Other than that, optical and structural properties were also characterized by using UV-VIS-NIR system and Atomic Force Microscopy. The same trend of optical and electrical can be seen when the measurement from the Tauc's plot expose a decreasing value of optical band gap as temperature increase.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133269784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-22DOI: 10.1109/ISIEA.2011.6108765
S. Mirazimi, A. Khairudin, M. H. Ashurian, M. Fathi
This paper is concerned with developing model of pitch regulated fixed speed (PRFS) type of wind turbine generators (WTG) used as distributed generation (DG) sources and demonstrating its application for steady state analysis. The model for this class of WTG developed here facilitates the computation of terminal voltages for a specified wind speed. The proposed model has been used to investigate the impact of WTG integrating in power system by different number of WTG on terminal voltage variation. The application of the proposed model for the load flow analysis of radial systems having WTG has been described. The load flow method used in this paper is balance radial load flow based on forward-backward method. Simulation studies have been carried out on a 33 bus radial distribution system consisting WTG sources to illustrate the application of the proposed model developed by using MATLAB.
{"title":"Integration of pitch regulated fixed speed wind turbine in a radial distribution system","authors":"S. Mirazimi, A. Khairudin, M. H. Ashurian, M. Fathi","doi":"10.1109/ISIEA.2011.6108765","DOIUrl":"https://doi.org/10.1109/ISIEA.2011.6108765","url":null,"abstract":"This paper is concerned with developing model of pitch regulated fixed speed (PRFS) type of wind turbine generators (WTG) used as distributed generation (DG) sources and demonstrating its application for steady state analysis. The model for this class of WTG developed here facilitates the computation of terminal voltages for a specified wind speed. The proposed model has been used to investigate the impact of WTG integrating in power system by different number of WTG on terminal voltage variation. The application of the proposed model for the load flow analysis of radial systems having WTG has been described. The load flow method used in this paper is balance radial load flow based on forward-backward method. Simulation studies have been carried out on a 33 bus radial distribution system consisting WTG sources to illustrate the application of the proposed model developed by using MATLAB.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124279237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-22DOI: 10.1109/ISIEA.2011.6108750
F. Zahid, M. Sarah, M. Rusop
The performance and properties of organic/inorganic nanocomposited poly[2-methoxy 5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV):TiO2 thin film at different thickness was investigated. MEH-PPV:TiO2 nanocomposite thin film has been prepared on indium tin oxide (ITO) substrate using spin-coating method with different deposition time from 1 to 10 times at room temperature. The effect of different thickness on the electrical and optical properties of MEH-PPV:TiO2 was characterized by using solar simulator under AM 1.5, 100mW/cm2 white light illumination and UV-Vis-NIR spectrophotometer respectively. From the current-voltage (I–V) measurement the result shows for 3 times of deposition, at thickness 719.413 nm gives the highest photoconductivity value, 35.2336×103 S.m−1. While for photoconductivity of 5, 7 and 10 times of deposition, there is no significant improvement were obtained. The optical properties were found to be strongly dependent on the thickness of nanocomposite thin films. The absorption coefficient reveals an improvement as the number of thickness increases with strong absorption at wavelength of 500 nm in visible ranges and 310 nm in UV ranges respectively.
{"title":"Effect of thickness on the electrical and optical properties of MEH-PPV:TiO2 nanocomposite for organic solar cell application","authors":"F. Zahid, M. Sarah, M. Rusop","doi":"10.1109/ISIEA.2011.6108750","DOIUrl":"https://doi.org/10.1109/ISIEA.2011.6108750","url":null,"abstract":"The performance and properties of organic/inorganic nanocomposited poly[2-methoxy 5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV):TiO2 thin film at different thickness was investigated. MEH-PPV:TiO2 nanocomposite thin film has been prepared on indium tin oxide (ITO) substrate using spin-coating method with different deposition time from 1 to 10 times at room temperature. The effect of different thickness on the electrical and optical properties of MEH-PPV:TiO2 was characterized by using solar simulator under AM 1.5, 100mW/cm2 white light illumination and UV-Vis-NIR spectrophotometer respectively. From the current-voltage (I–V) measurement the result shows for 3 times of deposition, at thickness 719.413 nm gives the highest photoconductivity value, 35.2336×103 S.m−1. While for photoconductivity of 5, 7 and 10 times of deposition, there is no significant improvement were obtained. The optical properties were found to be strongly dependent on the thickness of nanocomposite thin films. The absorption coefficient reveals an improvement as the number of thickness increases with strong absorption at wavelength of 500 nm in visible ranges and 310 nm in UV ranges respectively.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124700539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-22DOI: 10.1109/ISIEA.2011.6108699
B. Mahato, G. K. Mahanti, A. K. Panda
A method based on iterative fast fourier technique to generate a chebyshev like broadside pattern with uniform side lobe level of linear array of uniformly spaced isotropic antennas with fixed dynamic range ratio of amplitude distribution is presented in this paper. One example has been presented with 20 elements. Dynamic range ratio has been made equal to that of a chebyshev array with same number of elements. The method uses the property that for a linear array with uniform element spacing, an inverse Fourier transform relationship exists between the array factor and the element excitations.
{"title":"Synthesis of linear array antenna with uniform side lobe level and fixed dynamic range ratio using iterative fast Fourier transform","authors":"B. Mahato, G. K. Mahanti, A. K. Panda","doi":"10.1109/ISIEA.2011.6108699","DOIUrl":"https://doi.org/10.1109/ISIEA.2011.6108699","url":null,"abstract":"A method based on iterative fast fourier technique to generate a chebyshev like broadside pattern with uniform side lobe level of linear array of uniformly spaced isotropic antennas with fixed dynamic range ratio of amplitude distribution is presented in this paper. One example has been presented with 20 elements. Dynamic range ratio has been made equal to that of a chebyshev array with same number of elements. The method uses the property that for a linear array with uniform element spacing, an inverse Fourier transform relationship exists between the array factor and the element excitations.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129319023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-22DOI: 10.1109/ISIEA.2011.6108753
M. H. Mamat, M. Musa, N. Sin, M. Rusop, Z. Khusaimi
Aligned Aluminum (Al)-doped zinc oxide (ZnO) nanorod arrays were prepared on seeded catalyst-coated glass substrates using a novel technique of sonicated sol-gel immersion method at different annealing temperatures. The diameter sizes of synthesized hexagonal-shaped nanorods are found to be in the range between 50 nm to 150 nm. The annealing treatment up to 500 °C did not give any significance effects on the nanorods morphology as observed by field emission scanning electron microscopy (FESEM). The micro-Raman spectra reveal that the crystallinity of the nanorod arrays were improved at higher annealing temperature as shown by the E2 (high) peak intensity enhancement. This result was supported by XRD spectra where the XRD peak intensity for annealed nanorods is higher than as-grown nanorods. XRD spectra reveal Al-doped ZnO nanorod arrays grew preferentially along the (002) plane or the c-axis, indicating high quality of the ZnO crystal. Al forms Ohmic contacts with Al-doped ZnO nanorod arrays that are shown through a linear current-voltage (I-V) characteristic. The conductivity of nanorod arrays increased with annealing temperatures up to 500 °C with a maximum conductivity ~1.72 × 10-2 Scm-1.
{"title":"Characteristics of Aligned Aluminum-Doped Zinc oxide nanorod arrays via a novel sonicated sol-gel immersion","authors":"M. H. Mamat, M. Musa, N. Sin, M. Rusop, Z. Khusaimi","doi":"10.1109/ISIEA.2011.6108753","DOIUrl":"https://doi.org/10.1109/ISIEA.2011.6108753","url":null,"abstract":"Aligned Aluminum (Al)-doped zinc oxide (ZnO) nanorod arrays were prepared on seeded catalyst-coated glass substrates using a novel technique of sonicated sol-gel immersion method at different annealing temperatures. The diameter sizes of synthesized hexagonal-shaped nanorods are found to be in the range between 50 nm to 150 nm. The annealing treatment up to 500 °C did not give any significance effects on the nanorods morphology as observed by field emission scanning electron microscopy (FESEM). The micro-Raman spectra reveal that the crystallinity of the nanorod arrays were improved at higher annealing temperature as shown by the E2 (high) peak intensity enhancement. This result was supported by XRD spectra where the XRD peak intensity for annealed nanorods is higher than as-grown nanorods. XRD spectra reveal Al-doped ZnO nanorod arrays grew preferentially along the (002) plane or the c-axis, indicating high quality of the ZnO crystal. Al forms Ohmic contacts with Al-doped ZnO nanorod arrays that are shown through a linear current-voltage (I-V) characteristic. The conductivity of nanorod arrays increased with annealing temperatures up to 500 °C with a maximum conductivity ~1.72 × 10-2 Scm-1.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127477817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-22DOI: 10.1109/ISIEA.2011.6108771
H. M. Haniff, M. Sulaiman, H. N. M. Shah, L. W. Teck
This research regarding the application of a vision algorithm sensor to monitor the operation of a system in order to control the concerning jobs and work pieces recognition that are to be made during system operation in real time. This paper stresses more on the vision algorithm that mainly focus on shape-based matching application. This algorithm consists of two parts; training phase and recognition phase. Region of interest (ROI) are using to create the special region of the defect model for easier in matching purposes. By minimizing the ROI are able to decrease the processing time taken in order for completing its task. 3 models will be created as a main defect; gap defect, bumper defect and bubble defect are trained through the system to extract the special data created for them and using it to provide data in finding matching defect with tested images after gluing process being done.
{"title":"Shape-based matching: Defect inspection of glue process in vision system","authors":"H. M. Haniff, M. Sulaiman, H. N. M. Shah, L. W. Teck","doi":"10.1109/ISIEA.2011.6108771","DOIUrl":"https://doi.org/10.1109/ISIEA.2011.6108771","url":null,"abstract":"This research regarding the application of a vision algorithm sensor to monitor the operation of a system in order to control the concerning jobs and work pieces recognition that are to be made during system operation in real time. This paper stresses more on the vision algorithm that mainly focus on shape-based matching application. This algorithm consists of two parts; training phase and recognition phase. Region of interest (ROI) are using to create the special region of the defect model for easier in matching purposes. By minimizing the ROI are able to decrease the processing time taken in order for completing its task. 3 models will be created as a main defect; gap defect, bumper defect and bubble defect are trained through the system to extract the special data created for them and using it to provide data in finding matching defect with tested images after gluing process being done.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129075081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-22DOI: 10.1109/ISIEA.2011.6108691
Puteri Nor Ashikin Megat Yunus, A. Jusoh, M. K. Hamzah
This paper presents the application of Single Phase Matrix Converter (SPMC) as an AC-DC controlled rectifier. SPMC used the multiple PWM technique as its basic switching operation for synthesizing the required output. Apart from converting AC input to DC output signal, the investigation also focused on the introduction of passive damping network at DC side to improve the total harmonic distortion (THD). Classical rectifier with LC filter at DC side of the rectifier will create non sinusoidal input current. As a result, it contributes to high THD supply current. Passive Damping Network at DC side was introduced to compensate this problem. The work will be started with some analysis on the relationship between the output and input voltages and the output impedance of filter system in designing the passive damping network using Matlab. A detail investigation on the rectifier performances related to input current THD was carried out using the Matlab/Simulink.
{"title":"Passive damping network for a Single Phase Matrix Converter (SPMC) operating as a rectifier","authors":"Puteri Nor Ashikin Megat Yunus, A. Jusoh, M. K. Hamzah","doi":"10.1109/ISIEA.2011.6108691","DOIUrl":"https://doi.org/10.1109/ISIEA.2011.6108691","url":null,"abstract":"This paper presents the application of Single Phase Matrix Converter (SPMC) as an AC-DC controlled rectifier. SPMC used the multiple PWM technique as its basic switching operation for synthesizing the required output. Apart from converting AC input to DC output signal, the investigation also focused on the introduction of passive damping network at DC side to improve the total harmonic distortion (THD). Classical rectifier with LC filter at DC side of the rectifier will create non sinusoidal input current. As a result, it contributes to high THD supply current. Passive Damping Network at DC side was introduced to compensate this problem. The work will be started with some analysis on the relationship between the output and input voltages and the output impedance of filter system in designing the passive damping network using Matlab. A detail investigation on the rectifier performances related to input current THD was carried out using the Matlab/Simulink.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130685601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-22DOI: 10.1109/ISIEA.2011.6108813
M. Kumngern, U. Torteanchai
This paper presents a new voltage-mode multifunction biquad filter with three-input single-output using simple operational transconductance amplifiers (OTAs) and grounded capacitors. The proposed circuit can simultaneously realize voltage-mode lowpass, bandpass, highpass, bandstop and allpass filter responses at a high impedance input terminal. The natural frequency and the quality factor can also be tuned orthogonally and separately through adjusting the bias currents of OTAs. The performances of the proposed circuit are simulated with PSPICE simulations to confirm the presented theory.
{"title":"Voltage-mode MISO OTA-C biquad filter","authors":"M. Kumngern, U. Torteanchai","doi":"10.1109/ISIEA.2011.6108813","DOIUrl":"https://doi.org/10.1109/ISIEA.2011.6108813","url":null,"abstract":"This paper presents a new voltage-mode multifunction biquad filter with three-input single-output using simple operational transconductance amplifiers (OTAs) and grounded capacitors. The proposed circuit can simultaneously realize voltage-mode lowpass, bandpass, highpass, bandstop and allpass filter responses at a high impedance input terminal. The natural frequency and the quality factor can also be tuned orthogonally and separately through adjusting the bias currents of OTAs. The performances of the proposed circuit are simulated with PSPICE simulations to confirm the presented theory.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132440968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-22DOI: 10.1109/ISIEA.2011.6108680
M. Muhamad, N. Soin, H. Ramiah, N. Noh, C. W. Keat
A 130-nm CMOS low-noise amplifier (LNA) for WCDMA applications is presented. The circuit adopts an inductively degenerated cascode topology. A detailed methodology using power constraint noise optimization (PCNO) method that leads to an optimum width of the LNA is presented. A theoretical noise figure optimization using fixed power was used as a design optimization guide. This inductively degenerated cascade topology show good noise performance which it achieve a noise figure of 1.32dB while provides a forward gain, S21 of 18.24 dB from a 1.2V voltage supply. The input reflection coefficient, S11 is −19 dB.
{"title":"A 0.13µm inductively degenerated cascode CMOS LNA at 2.14GHz","authors":"M. Muhamad, N. Soin, H. Ramiah, N. Noh, C. W. Keat","doi":"10.1109/ISIEA.2011.6108680","DOIUrl":"https://doi.org/10.1109/ISIEA.2011.6108680","url":null,"abstract":"A 130-nm CMOS low-noise amplifier (LNA) for WCDMA applications is presented. The circuit adopts an inductively degenerated cascode topology. A detailed methodology using power constraint noise optimization (PCNO) method that leads to an optimum width of the LNA is presented. A theoretical noise figure optimization using fixed power was used as a design optimization guide. This inductively degenerated cascade topology show good noise performance which it achieve a noise figure of 1.32dB while provides a forward gain, S21 of 18.24 dB from a 1.2V voltage supply. The input reflection coefficient, S11 is −19 dB.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129201896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-22DOI: 10.1109/ISIEA.2011.6108732
S. Yun, S. Parasuraman, V. Ganapathy
Mobile Robot Navigation is an advanced technique where static, dynamic, known and unknown environment is involved. In this research, Genetic Algorithm (GA) is used to assist mobile robot to move, identify the obstacles in the environment, learn the environment and reach the desired goal in an unknown and unrecognized environment. This study is focused on exploring the algorithm that avoids acute obstacles in the environment. In the event of mobile robot encountering any dynamic obstacles when travelling from the starting position to the desired goal according to the optimum collision free path determined by the controller, the controller is capable of re-planning the new optimum collision free path. MATLAB simulation is developed to verify and validate the algorithm before they are real time implemented on Team AmigoBotℒ robot. The results obtained from both simulation and actual application confirmed the flexibility and robustness of the controllers designed in path planning.
{"title":"Dynamic path planning algorithm in mobile robot navigation","authors":"S. Yun, S. Parasuraman, V. Ganapathy","doi":"10.1109/ISIEA.2011.6108732","DOIUrl":"https://doi.org/10.1109/ISIEA.2011.6108732","url":null,"abstract":"Mobile Robot Navigation is an advanced technique where static, dynamic, known and unknown environment is involved. In this research, Genetic Algorithm (GA) is used to assist mobile robot to move, identify the obstacles in the environment, learn the environment and reach the desired goal in an unknown and unrecognized environment. This study is focused on exploring the algorithm that avoids acute obstacles in the environment. In the event of mobile robot encountering any dynamic obstacles when travelling from the starting position to the desired goal according to the optimum collision free path determined by the controller, the controller is capable of re-planning the new optimum collision free path. MATLAB simulation is developed to verify and validate the algorithm before they are real time implemented on Team AmigoBotℒ robot. The results obtained from both simulation and actual application confirmed the flexibility and robustness of the controllers designed in path planning.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121261016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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