Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634458
K. Kishino
Self-assembled InGaN nanocolumn LEDs emitting from ultraviolet to red were fabricated on n-type (111) Si substrates by rf-MBE. To achieve homogenization of nanocolumns, Ti-mask selective area growth was developed to fabricate uniform arrays of GaN nanocolumns.
{"title":"GaN-based nanocolumn emitters and related technology","authors":"K. Kishino","doi":"10.1109/INOW.2008.4634458","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634458","url":null,"abstract":"Self-assembled InGaN nanocolumn LEDs emitting from ultraviolet to red were fabricated on n-type (111) Si substrates by rf-MBE. To achieve homogenization of nanocolumns, Ti-mask selective area growth was developed to fabricate uniform arrays of GaN nanocolumns.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126401660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634413
P. Yang
Semiconductor nanowires have witnessed an explosion of interest in the last several years due to advances in synthesis and the unique thermal, optoelectronic, chemical, and mechanical properties of these materials. The potential applications of single-crystalline nanowires are truly impressive, including computational technology, communications, spectroscopic sensing, alternative energy, and the biological sciences. While lithographic silicon processes are rapidly approaching their physical size limits, optical information processing promises to be a low-power, high-bandwidth alternative for the continuation of Moorepsilas Law. Semiconductor systems with photon, phonon and/or electron confinement in two dimensions offer a distinct way to study electrical, thermal, mechanical, and optical phenomena as a function of dimensionality and size reduction. These structures have cross-sectional dimensions that can be tuned from 5 to 500 nm, with lengths spanning hundreds of nanometers to millimeters. The vapor-liquid-solid crystal growth mechanism has been utilized for the general synthesis of nanowires of different compositions, sizes, and orientation. Precise size control of the nanowires can be readily achieved using metal nanocrystals as the catalysts. Epitaxial growth plays a significant role in making such nanowire heterostructures and their arrays. Achieving such high level of synthetic control over nanowire growth allows us to explore some of their very unique physical properties. For example, semiconductor nanowires can function as self-contained nanoscale lasers, LEDs, sub-wavelength optical waveguides, photodetector. We have also recently developed an electrode-free, continuously tunable coherent visible light source compatible with physiological environments, from individual potassium niobate (KNbO3) nanowires. These wires exhibit efficient second harmonic generation, and act as frequency converters, allowing the local synthesis of a wide range of colours via sum and difference frequency generation. We use this tunable nanometric light source to implement a novel form of subwavelength microscopy, in which an infrared laser is used to optically trap and scan a nanowire over a sample, suggesting a wide range of potential applications in physics, chemistry, materials science and biology.
{"title":"Towards a tunable nanoscopic light source","authors":"P. Yang","doi":"10.1109/INOW.2008.4634413","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634413","url":null,"abstract":"Semiconductor nanowires have witnessed an explosion of interest in the last several years due to advances in synthesis and the unique thermal, optoelectronic, chemical, and mechanical properties of these materials. The potential applications of single-crystalline nanowires are truly impressive, including computational technology, communications, spectroscopic sensing, alternative energy, and the biological sciences. While lithographic silicon processes are rapidly approaching their physical size limits, optical information processing promises to be a low-power, high-bandwidth alternative for the continuation of Moorepsilas Law. Semiconductor systems with photon, phonon and/or electron confinement in two dimensions offer a distinct way to study electrical, thermal, mechanical, and optical phenomena as a function of dimensionality and size reduction. These structures have cross-sectional dimensions that can be tuned from 5 to 500 nm, with lengths spanning hundreds of nanometers to millimeters. The vapor-liquid-solid crystal growth mechanism has been utilized for the general synthesis of nanowires of different compositions, sizes, and orientation. Precise size control of the nanowires can be readily achieved using metal nanocrystals as the catalysts. Epitaxial growth plays a significant role in making such nanowire heterostructures and their arrays. Achieving such high level of synthetic control over nanowire growth allows us to explore some of their very unique physical properties. For example, semiconductor nanowires can function as self-contained nanoscale lasers, LEDs, sub-wavelength optical waveguides, photodetector. We have also recently developed an electrode-free, continuously tunable coherent visible light source compatible with physiological environments, from individual potassium niobate (KNbO3) nanowires. These wires exhibit efficient second harmonic generation, and act as frequency converters, allowing the local synthesis of a wide range of colours via sum and difference frequency generation. We use this tunable nanometric light source to implement a novel form of subwavelength microscopy, in which an infrared laser is used to optically trap and scan a nanowire over a sample, suggesting a wide range of potential applications in physics, chemistry, materials science and biology.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125742790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634505
B. Bastek, F. Bertram, J. Christen, T. Wernicke, M. Weyers, M. Kneissl
The recombination kinetics of the free exciton (FX) and basal plane stacking fault (BSF) emission in a-plane GaN epitaxial lateral overgrowth structures is analyzed by ps-time-resolved cathodoluminescence microscopy in the temperature range from 5K to 300K. The capture of FX by donors and the thermionic emission of holes from the BSF Quantum Well is analyzed.
{"title":"Microscopic recombination kinetics in high quality, fully coalesced a-plane GaN ELO structures investigated by ps-time-resolved cathodoluminescence microscopy","authors":"B. Bastek, F. Bertram, J. Christen, T. Wernicke, M. Weyers, M. Kneissl","doi":"10.1109/INOW.2008.4634505","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634505","url":null,"abstract":"The recombination kinetics of the free exciton (FX) and basal plane stacking fault (BSF) emission in a-plane GaN epitaxial lateral overgrowth structures is analyzed by ps-time-resolved cathodoluminescence microscopy in the temperature range from 5K to 300K. The capture of FX by donors and the thermionic emission of holes from the BSF Quantum Well is analyzed.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":" 633","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113946870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634422
V. Dubrovskii
Nucleation of two-dimensional islands from a liquid alloy is generally considered as one of the most important processes driving the ldquovapour-liquid-solidrdquo catalyst-assisted growth of semiconductor nanowires. This talk presents an overview of theoretical and experimental results concerning the influence of nucleation on the morphology and structure of different III-V nanowires. In particular, it will be shown that nucleation at the triple line leads to the formation of hexagonal wurtzite crystal phase in nanowires of zinc blende III-V materials.
{"title":"Role of nucleation in the nanowire growth and properties","authors":"V. Dubrovskii","doi":"10.1109/INOW.2008.4634422","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634422","url":null,"abstract":"Nucleation of two-dimensional islands from a liquid alloy is generally considered as one of the most important processes driving the ldquovapour-liquid-solidrdquo catalyst-assisted growth of semiconductor nanowires. This talk presents an overview of theoretical and experimental results concerning the influence of nucleation on the morphology and structure of different III-V nanowires. In particular, it will be shown that nucleation at the triple line leads to the formation of hexagonal wurtzite crystal phase in nanowires of zinc blende III-V materials.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125959427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634445
D. Deppe, S. Freisem, H. Chen, K. Shavritnaruk, A. Demir, G. Ozgur
The physics of quantum dot lasers are studied theoretically and experimentally to study their threshold temperature dependence, and the relationship between internal loss and threshold current density.
{"title":"Physics of quantum dot lasers: Threshold temperature dependence, internal loss effects, and threshold current density","authors":"D. Deppe, S. Freisem, H. Chen, K. Shavritnaruk, A. Demir, G. Ozgur","doi":"10.1109/INOW.2008.4634445","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634445","url":null,"abstract":"The physics of quantum dot lasers are studied theoretically and experimentally to study their threshold temperature dependence, and the relationship between internal loss and threshold current density.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"2517 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127480591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634543
T. Yamada, Y. Kokubun
We propose a hitless wavelength selective switch using vertically series coupled microring resonator. The beam structure was designed to control the coupling efficiency with low driving voltage.
{"title":"Hitless wavelength selective switch using vertically series coupled microring resonator manipulated by MEMS structure","authors":"T. Yamada, Y. Kokubun","doi":"10.1109/INOW.2008.4634543","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634543","url":null,"abstract":"We propose a hitless wavelength selective switch using vertically series coupled microring resonator. The beam structure was designed to control the coupling efficiency with low driving voltage.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122884916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634484
C. Schneider, T. Sunner, M. Strauss, A. Huggenberger, D. Wiener, S. Reitzenstein, M. Kamp, S. Hofling, A. Forchel
We report on a scalable process to incorporate InAs quantum dots in spatially resonant devices. This process combines site controlled quantum dot growth with an accurate alignment of the device to the single QDs.
{"title":"Spatially resonant nanocavity-quantum dot arrays","authors":"C. Schneider, T. Sunner, M. Strauss, A. Huggenberger, D. Wiener, S. Reitzenstein, M. Kamp, S. Hofling, A. Forchel","doi":"10.1109/INOW.2008.4634484","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634484","url":null,"abstract":"We report on a scalable process to incorporate InAs quantum dots in spatially resonant devices. This process combines site controlled quantum dot growth with an accurate alignment of the device to the single QDs.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129386093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634407
K. Vahala
Progress in the subject of cavity optomechanics will be described. Micromechanical oscillators to microwave rates, as well as progress directed towards cooling to the quantum ground state will be reviewed.
本文将叙述空腔光力学的研究进展。微机械振荡器到微波速率，以及直接冷却到量子基态的进展将被回顾。
{"title":"Cooling and amplifying micro-mechanical motion using light","authors":"K. Vahala","doi":"10.1109/INOW.2008.4634407","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634407","url":null,"abstract":"Progress in the subject of cavity optomechanics will be described. Micromechanical oscillators to microwave rates, as well as progress directed towards cooling to the quantum ground state will be reviewed.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115979050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634477
Tsung-Yi Tang, Wen-Yu Shiao, Yung-Sheng Chen, K. Averett, J. Albrecht, C.C. Yang
Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.
{"title":"Coalescence overgrowth of GaN nanocolumns","authors":"Tsung-Yi Tang, Wen-Yu Shiao, Yung-Sheng Chen, K. Averett, J. Albrecht, C.C. Yang","doi":"10.1109/INOW.2008.4634477","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634477","url":null,"abstract":"Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116960286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634467
C. Chang-Hasnain
We review the progress of optical injection locking (OIL) of multimode (MM) VCSELs and discuss the potential of using tunable OIL-MM-VCSELs as low-cost high-performance transmitters for wavelength division multiplexed passive optical networks. The wavelength division multiplexed passive optical network (WDM-PON) is actively being developed to deliver bandwidth intensive applications to end users in a cost-effective and future-proof manner [1]. To meet the demands of low-cost wavelength-specific upstream transmitters, we have recently proposed a novel scheme that utilizes optical injection-locked (OIL) 1.55 mum vertical-cavity surface-emitting lasers (VCSELs) as directly modulated upstream transmitters, whereby the injection locking light is furnished by modulated downstream signals [2]. In that configuration, the distributed feeback (DFB) lasers that carry downstream signals from the central office (CO) also serve a second function as master lasers to injection-lock upstream slave VCSELs in the optical network units (ONUs) onto the WDM grid. Our scheme thereby removes the need for external injection locking optical sources, external modulators, and potentially wavelength stabilization circuitry. We showed that the OIL-VCSEL responds mainly to the carrier wavelength. Hence, it does not "see" to the modulated downstream signal. Hence, downstream signal does not adversely affect the upstream data flow yet can provide wavelength locking to the standard WDM grid. The VCSELs used in [2] and all of our past experiments [3], however, are single mode VCSELs. While very effective for OIL experiments, single mode VCSELs are intrinsically more expensive. Multimode (MM) VCSELs are attractive low-cost transmitters for high-speed short-reach fiber-optic networks [4,5]. The multimode nature introduces mode competition noise and modal dispersion, preventing these devices from very high speed modulation speed or long transmission distance. Recently, greatly enhanced bandwidth and transmission distance were reported using optical injection locking (OIL) as a technique to improve the direct-modulation response of MM VCSEL [6]. We showed that 54 GHz resonance frequency and 38 GHz 3-dB bandwidth can be obtained with a MM-VCSEL with a free-running 3dB-bandwidth of 3 GHz. These improvements are made possible by leveraging the unique properties of MM-VCSEL, having spatially and spectrally well-separated modes which facilitate efficient injection to preferentially enhance the fundamental transverse mode. We believe this result will be very important for low-cost upgrades of existing embedded local area networks (LANs) and indeed for WDM-PON. The final piece of puzzle to make OIL-MM-VCSEL for WDM-PON is wavelength tunability. As the injected power will be low, coming from CO through 10-25 km of standard fiber, the locking wavelength range is small. A tunable VCSEL will provide the flexibility to enable better locking. Furthermore, a tunable VCSEL can be a universal transmi
{"title":"Optically-injection locked tunable multimode VCSEL for WDM passive optical networks","authors":"C. Chang-Hasnain","doi":"10.1109/INOW.2008.4634467","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634467","url":null,"abstract":"We review the progress of optical injection locking (OIL) of multimode (MM) VCSELs and discuss the potential of using tunable OIL-MM-VCSELs as low-cost high-performance transmitters for wavelength division multiplexed passive optical networks. The wavelength division multiplexed passive optical network (WDM-PON) is actively being developed to deliver bandwidth intensive applications to end users in a cost-effective and future-proof manner [1]. To meet the demands of low-cost wavelength-specific upstream transmitters, we have recently proposed a novel scheme that utilizes optical injection-locked (OIL) 1.55 mum vertical-cavity surface-emitting lasers (VCSELs) as directly modulated upstream transmitters, whereby the injection locking light is furnished by modulated downstream signals [2]. In that configuration, the distributed feeback (DFB) lasers that carry downstream signals from the central office (CO) also serve a second function as master lasers to injection-lock upstream slave VCSELs in the optical network units (ONUs) onto the WDM grid. Our scheme thereby removes the need for external injection locking optical sources, external modulators, and potentially wavelength stabilization circuitry. We showed that the OIL-VCSEL responds mainly to the carrier wavelength. Hence, it does not \"see\" to the modulated downstream signal. Hence, downstream signal does not adversely affect the upstream data flow yet can provide wavelength locking to the standard WDM grid. The VCSELs used in [2] and all of our past experiments [3], however, are single mode VCSELs. While very effective for OIL experiments, single mode VCSELs are intrinsically more expensive. Multimode (MM) VCSELs are attractive low-cost transmitters for high-speed short-reach fiber-optic networks [4,5]. The multimode nature introduces mode competition noise and modal dispersion, preventing these devices from very high speed modulation speed or long transmission distance. Recently, greatly enhanced bandwidth and transmission distance were reported using optical injection locking (OIL) as a technique to improve the direct-modulation response of MM VCSEL [6]. We showed that 54 GHz resonance frequency and 38 GHz 3-dB bandwidth can be obtained with a MM-VCSEL with a free-running 3dB-bandwidth of 3 GHz. These improvements are made possible by leveraging the unique properties of MM-VCSEL, having spatially and spectrally well-separated modes which facilitate efficient injection to preferentially enhance the fundamental transverse mode. We believe this result will be very important for low-cost upgrades of existing embedded local area networks (LANs) and indeed for WDM-PON. The final piece of puzzle to make OIL-MM-VCSEL for WDM-PON is wavelength tunability. As the injected power will be low, coming from CO through 10-25 km of standard fiber, the locking wavelength range is small. A tunable VCSEL will provide the flexibility to enable better locking. Furthermore, a tunable VCSEL can be a universal transmi","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"2675 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115565707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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