Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634530
Chao Peng, Zhengbin Li, A. Xu
We propose a modified FDTD algorithm to design and analyze micro sensitive rotation sensor based on rotating optical element. The algorithm can be applied to photonic structures with various material properties and complex geometric structures.
{"title":"Micro rotation sensor design and analysis with a modified FDTD algorithm","authors":"Chao Peng, Zhengbin Li, A. Xu","doi":"10.1109/INOW.2008.4634530","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634530","url":null,"abstract":"We propose a modified FDTD algorithm to design and analyze micro sensitive rotation sensor based on rotating optical element. The algorithm can be applied to photonic structures with various material properties and complex geometric structures.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124400202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634445
D. Deppe, S. Freisem, H. Chen, K. Shavritnaruk, A. Demir, G. Ozgur
The physics of quantum dot lasers are studied theoretically and experimentally to study their threshold temperature dependence, and the relationship between internal loss and threshold current density.
{"title":"Physics of quantum dot lasers: Threshold temperature dependence, internal loss effects, and threshold current density","authors":"D. Deppe, S. Freisem, H. Chen, K. Shavritnaruk, A. Demir, G. Ozgur","doi":"10.1109/INOW.2008.4634445","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634445","url":null,"abstract":"The physics of quantum dot lasers are studied theoretically and experimentally to study their threshold temperature dependence, and the relationship between internal loss and threshold current density.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"2517 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127480591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634438
T. Baba
Photonic crystals and silicon photonics have dramatically reduced the size of photonic devices to a micron scale and added unique functionalities such as slow light and negative refraction. They will increase the feasibility of large scale photonic integration if lll-V devices are smartly combined with Si platform. This presentation discusses their current status and effective choice of photonic nanostructures in each photonic device.
{"title":"Photonic crystals and silicon photonics","authors":"T. Baba","doi":"10.1109/INOW.2008.4634438","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634438","url":null,"abstract":"Photonic crystals and silicon photonics have dramatically reduced the size of photonic devices to a micron scale and added unique functionalities such as slow light and negative refraction. They will increase the feasibility of large scale photonic integration if lll-V devices are smartly combined with Si platform. This presentation discusses their current status and effective choice of photonic nanostructures in each photonic device.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133898794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634560
S. Agarwal, G. Mazzeo, E. Yablonovitch
The subthreshold slope of a tunneling transistor can be reduced by reducing the effects of thermal vibrations on the band edge energy through a biaxial tensile strain and using a silicon germanium superlattice.
通过双轴拉伸应变和使用硅锗超晶格,可以减少热振动对带边能量的影响,从而降低隧道晶体管的亚阈值斜率。
{"title":"Subthreshold slope reduction of tunneling transistors through deformation potential engineering","authors":"S. Agarwal, G. Mazzeo, E. Yablonovitch","doi":"10.1109/INOW.2008.4634560","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634560","url":null,"abstract":"The subthreshold slope of a tunneling transistor can be reduced by reducing the effects of thermal vibrations on the band edge energy through a biaxial tensile strain and using a silicon germanium superlattice.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131082609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634550
N. Otake, Hitoshi Yamada, H. Wado, K. Abe, Y. Takeuchi
We have investigated InGaAs multiple-quantum-wells vertical-cavity surface-emitting laser (VCSEL) under high-power pulsed operation. The peak pulsed power of over 12.5 W has been achieved with the single VCSEL device which has five InGaAs quantum wells.
{"title":"High-power vertical-cavity surface-emitting laser under pulsed operation","authors":"N. Otake, Hitoshi Yamada, H. Wado, K. Abe, Y. Takeuchi","doi":"10.1109/INOW.2008.4634550","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634550","url":null,"abstract":"We have investigated InGaAs multiple-quantum-wells vertical-cavity surface-emitting laser (VCSEL) under high-power pulsed operation. The peak pulsed power of over 12.5 W has been achieved with the single VCSEL device which has five InGaAs quantum wells.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131810140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634543
T. Yamada, Y. Kokubun
We propose a hitless wavelength selective switch using vertically series coupled microring resonator. The beam structure was designed to control the coupling efficiency with low driving voltage.
{"title":"Hitless wavelength selective switch using vertically series coupled microring resonator manipulated by MEMS structure","authors":"T. Yamada, Y. Kokubun","doi":"10.1109/INOW.2008.4634543","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634543","url":null,"abstract":"We propose a hitless wavelength selective switch using vertically series coupled microring resonator. The beam structure was designed to control the coupling efficiency with low driving voltage.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122884916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634484
C. Schneider, T. Sunner, M. Strauss, A. Huggenberger, D. Wiener, S. Reitzenstein, M. Kamp, S. Hofling, A. Forchel
We report on a scalable process to incorporate InAs quantum dots in spatially resonant devices. This process combines site controlled quantum dot growth with an accurate alignment of the device to the single QDs.
{"title":"Spatially resonant nanocavity-quantum dot arrays","authors":"C. Schneider, T. Sunner, M. Strauss, A. Huggenberger, D. Wiener, S. Reitzenstein, M. Kamp, S. Hofling, A. Forchel","doi":"10.1109/INOW.2008.4634484","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634484","url":null,"abstract":"We report on a scalable process to incorporate InAs quantum dots in spatially resonant devices. This process combines site controlled quantum dot growth with an accurate alignment of the device to the single QDs.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129386093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634407
K. Vahala
Progress in the subject of cavity optomechanics will be described. Micromechanical oscillators to microwave rates, as well as progress directed towards cooling to the quantum ground state will be reviewed.
本文将叙述空腔光力学的研究进展。微机械振荡器到微波速率,以及直接冷却到量子基态的进展将被回顾。
{"title":"Cooling and amplifying micro-mechanical motion using light","authors":"K. Vahala","doi":"10.1109/INOW.2008.4634407","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634407","url":null,"abstract":"Progress in the subject of cavity optomechanics will be described. Micromechanical oscillators to microwave rates, as well as progress directed towards cooling to the quantum ground state will be reviewed.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115979050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634477
Tsung-Yi Tang, Wen-Yu Shiao, Yung-Sheng Chen, K. Averett, J. Albrecht, C.C. Yang
Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.
{"title":"Coalescence overgrowth of GaN nanocolumns","authors":"Tsung-Yi Tang, Wen-Yu Shiao, Yung-Sheng Chen, K. Averett, J. Albrecht, C.C. Yang","doi":"10.1109/INOW.2008.4634477","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634477","url":null,"abstract":"Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116960286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634467
C. Chang-Hasnain
We review the progress of optical injection locking (OIL) of multimode (MM) VCSELs and discuss the potential of using tunable OIL-MM-VCSELs as low-cost high-performance transmitters for wavelength division multiplexed passive optical networks. The wavelength division multiplexed passive optical network (WDM-PON) is actively being developed to deliver bandwidth intensive applications to end users in a cost-effective and future-proof manner [1]. To meet the demands of low-cost wavelength-specific upstream transmitters, we have recently proposed a novel scheme that utilizes optical injection-locked (OIL) 1.55 mum vertical-cavity surface-emitting lasers (VCSELs) as directly modulated upstream transmitters, whereby the injection locking light is furnished by modulated downstream signals [2]. In that configuration, the distributed feeback (DFB) lasers that carry downstream signals from the central office (CO) also serve a second function as master lasers to injection-lock upstream slave VCSELs in the optical network units (ONUs) onto the WDM grid. Our scheme thereby removes the need for external injection locking optical sources, external modulators, and potentially wavelength stabilization circuitry. We showed that the OIL-VCSEL responds mainly to the carrier wavelength. Hence, it does not "see" to the modulated downstream signal. Hence, downstream signal does not adversely affect the upstream data flow yet can provide wavelength locking to the standard WDM grid. The VCSELs used in [2] and all of our past experiments [3], however, are single mode VCSELs. While very effective for OIL experiments, single mode VCSELs are intrinsically more expensive. Multimode (MM) VCSELs are attractive low-cost transmitters for high-speed short-reach fiber-optic networks [4,5]. The multimode nature introduces mode competition noise and modal dispersion, preventing these devices from very high speed modulation speed or long transmission distance. Recently, greatly enhanced bandwidth and transmission distance were reported using optical injection locking (OIL) as a technique to improve the direct-modulation response of MM VCSEL [6]. We showed that 54 GHz resonance frequency and 38 GHz 3-dB bandwidth can be obtained with a MM-VCSEL with a free-running 3dB-bandwidth of 3 GHz. These improvements are made possible by leveraging the unique properties of MM-VCSEL, having spatially and spectrally well-separated modes which facilitate efficient injection to preferentially enhance the fundamental transverse mode. We believe this result will be very important for low-cost upgrades of existing embedded local area networks (LANs) and indeed for WDM-PON. The final piece of puzzle to make OIL-MM-VCSEL for WDM-PON is wavelength tunability. As the injected power will be low, coming from CO through 10-25 km of standard fiber, the locking wavelength range is small. A tunable VCSEL will provide the flexibility to enable better locking. Furthermore, a tunable VCSEL can be a universal transmi
{"title":"Optically-injection locked tunable multimode VCSEL for WDM passive optical networks","authors":"C. Chang-Hasnain","doi":"10.1109/INOW.2008.4634467","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634467","url":null,"abstract":"We review the progress of optical injection locking (OIL) of multimode (MM) VCSELs and discuss the potential of using tunable OIL-MM-VCSELs as low-cost high-performance transmitters for wavelength division multiplexed passive optical networks. The wavelength division multiplexed passive optical network (WDM-PON) is actively being developed to deliver bandwidth intensive applications to end users in a cost-effective and future-proof manner [1]. To meet the demands of low-cost wavelength-specific upstream transmitters, we have recently proposed a novel scheme that utilizes optical injection-locked (OIL) 1.55 mum vertical-cavity surface-emitting lasers (VCSELs) as directly modulated upstream transmitters, whereby the injection locking light is furnished by modulated downstream signals [2]. In that configuration, the distributed feeback (DFB) lasers that carry downstream signals from the central office (CO) also serve a second function as master lasers to injection-lock upstream slave VCSELs in the optical network units (ONUs) onto the WDM grid. Our scheme thereby removes the need for external injection locking optical sources, external modulators, and potentially wavelength stabilization circuitry. We showed that the OIL-VCSEL responds mainly to the carrier wavelength. Hence, it does not \"see\" to the modulated downstream signal. Hence, downstream signal does not adversely affect the upstream data flow yet can provide wavelength locking to the standard WDM grid. The VCSELs used in [2] and all of our past experiments [3], however, are single mode VCSELs. While very effective for OIL experiments, single mode VCSELs are intrinsically more expensive. Multimode (MM) VCSELs are attractive low-cost transmitters for high-speed short-reach fiber-optic networks [4,5]. The multimode nature introduces mode competition noise and modal dispersion, preventing these devices from very high speed modulation speed or long transmission distance. Recently, greatly enhanced bandwidth and transmission distance were reported using optical injection locking (OIL) as a technique to improve the direct-modulation response of MM VCSEL [6]. We showed that 54 GHz resonance frequency and 38 GHz 3-dB bandwidth can be obtained with a MM-VCSEL with a free-running 3dB-bandwidth of 3 GHz. These improvements are made possible by leveraging the unique properties of MM-VCSEL, having spatially and spectrally well-separated modes which facilitate efficient injection to preferentially enhance the fundamental transverse mode. We believe this result will be very important for low-cost upgrades of existing embedded local area networks (LANs) and indeed for WDM-PON. The final piece of puzzle to make OIL-MM-VCSEL for WDM-PON is wavelength tunability. As the injected power will be low, coming from CO through 10-25 km of standard fiber, the locking wavelength range is small. A tunable VCSEL will provide the flexibility to enable better locking. Furthermore, a tunable VCSEL can be a universal transmi","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"2675 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115565707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}