Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634539
R. Vadivelu, A. Kikuchi, K. Kishino
The IQE of InGaN quantum-wells emit from green to red is not so high due to spatial separation of electrons and holes by strain-induced piezo-electric-field. The strain relaxation in InGaN-QWs by nano etching is discussed.
{"title":"Strain relaxation effect by nano-pattern etching in InGaN/GaN quantum well structures grown by rf-plasma assisted molecular beam epitaxy.","authors":"R. Vadivelu, A. Kikuchi, K. Kishino","doi":"10.1109/INOW.2008.4634539","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634539","url":null,"abstract":"The IQE of InGaN quantum-wells emit from green to red is not so high due to spatial separation of electrons and holes by strain-induced piezo-electric-field. The strain relaxation in InGaN-QWs by nano etching is discussed.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124248561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634540
J. Matsui, H. Takahashi, N. Xie, J. Mizuno, K. Utaka
We fabricated a silicon mold for thermal Nanoimprint Lithography (NIL) with EB exposure and Deep-RIE. As a result, we obtained that including a grating whose pitch was 230nm with low roughness.
{"title":"Fabrication of silicon mold for thermal Nanoimprint Lithography","authors":"J. Matsui, H. Takahashi, N. Xie, J. Mizuno, K. Utaka","doi":"10.1109/INOW.2008.4634540","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634540","url":null,"abstract":"We fabricated a silicon mold for thermal Nanoimprint Lithography (NIL) with EB exposure and Deep-RIE. As a result, we obtained that including a grating whose pitch was 230nm with low roughness.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123402684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634418
Myung-Ki Kim, Min‐Kyo Seo, Seo-Heon Kim, Yong-Hee Lee
Recent proposal and demonstration of reconfigurable photonic crystal resonators will be discussed. Gaussian-shaped photonic well is formed, in the proximity of a single-row photonic crystal waveguide, when a highly-curved tapered fiber is in contact.
{"title":"Reconfigurable photonic crystal resonators","authors":"Myung-Ki Kim, Min‐Kyo Seo, Seo-Heon Kim, Yong-Hee Lee","doi":"10.1109/INOW.2008.4634418","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634418","url":null,"abstract":"Recent proposal and demonstration of reconfigurable photonic crystal resonators will be discussed. Gaussian-shaped photonic well is formed, in the proximity of a single-row photonic crystal waveguide, when a highly-curved tapered fiber is in contact.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123621621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634454
Y. Nakano
A review is given on InP-based integrated optical devices for robust and efficient photonic networking. The devices include an all-optical flip-flop for digital processing and memory functions in the network, and a phased-array optical matrix switch for fast and scalable switching of optical burst/packets.
{"title":"Integrated optical devices and circuits for photonic networking","authors":"Y. Nakano","doi":"10.1109/INOW.2008.4634454","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634454","url":null,"abstract":"A review is given on InP-based integrated optical devices for robust and efficient photonic networking. The devices include an all-optical flip-flop for digital processing and memory functions in the network, and a phased-array optical matrix switch for fast and scalable switching of optical burst/packets.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128175905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634557
N. Majer, K. Ludge, E. Scholl
The dynamical response of electrically pumped semiconductor quantum dot lasers and light pulse propagation in quantum dot semiconductor optical amplifiers is investigated including a microscopic approach for the nonlinear electron-electron scattering processes.
{"title":"Nonlinear dynamics of quantum dot lasers and amplifiers","authors":"N. Majer, K. Ludge, E. Scholl","doi":"10.1109/INOW.2008.4634557","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634557","url":null,"abstract":"The dynamical response of electrically pumped semiconductor quantum dot lasers and light pulse propagation in quantum dot semiconductor optical amplifiers is investigated including a microscopic approach for the nonlinear electron-electron scattering processes.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115970251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634506
B. Pesala, F. Sedgwick, A. Uskov, C. Chang-Hasnain
We present theoretical study of fast and slow light in a chirp-compensate semiconductor optical amplifier scheme. We obtain excellent match with experimental results. Using this model, we predict that a delay-bandwidth product of 33 can be attained with properly chosen parameters.
{"title":"Theoretical and experimental study of chirped-pulse slow and fast light using semiconductor optical amplifiers","authors":"B. Pesala, F. Sedgwick, A. Uskov, C. Chang-Hasnain","doi":"10.1109/INOW.2008.4634506","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634506","url":null,"abstract":"We present theoretical study of fast and slow light in a chirp-compensate semiconductor optical amplifier scheme. We obtain excellent match with experimental results. Using this model, we predict that a delay-bandwidth product of 33 can be attained with properly chosen parameters.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132081920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634561
E. Lau, R. Tucker, M. Wu
We present a new analysis of the modulation bandwidth of nanocavity light emitters. The modulation bandwidth is enhanced by the Purcell effect, but only if the device is operated below threshold. The maximum Purcell-enhanced 3-dB bandwidth scales inversely with the modal volume.
{"title":"Small-signal modulation bandwidth of Purcell-enhanced nanocavity light emitters","authors":"E. Lau, R. Tucker, M. Wu","doi":"10.1109/INOW.2008.4634561","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634561","url":null,"abstract":"We present a new analysis of the modulation bandwidth of nanocavity light emitters. The modulation bandwidth is enhanced by the Purcell effect, but only if the device is operated below threshold. The maximum Purcell-enhanced 3-dB bandwidth scales inversely with the modal volume.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132306835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634480
D. Siriani, P. Carney, K. Choquette
Evanescently-coupled 2-dimensional VCSEL arrays are fabricated by defining multiple implant apertures. We demonstrate coupling of multiple apertures and develop a coherence theory of laser coupling.
{"title":"Coupled implant-defined vertical-cavity surface-emitting laser arrays","authors":"D. Siriani, P. Carney, K. Choquette","doi":"10.1109/INOW.2008.4634480","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634480","url":null,"abstract":"Evanescently-coupled 2-dimensional VCSEL arrays are fabricated by defining multiple implant apertures. We demonstrate coupling of multiple apertures and develop a coherence theory of laser coupling.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134416236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634437
K. Ohashi
Optical communication is accepted as practical when the cost of introducing it is less than that of the conventional electronics. Silicon photonics is the prime candidates for low-cost highly integrated photonic devices because silicon semiconductor industry gives the most cost-effective and highly-integrated devices today. In addition to that, silicon as an optical material offers high-index contrast waveguides and hence it gives micro-meter scale passive optical devices. Those advantages could lead silicon photonics as a key technology for shorter interconnects such as on-chip networks as well as for long-haul telecommunication devices. Low cost integration of photonics with LSI using 3D-integration and surface-plasmon devices will be discussed briefly.
{"title":"Silicon photonic devices and their integration","authors":"K. Ohashi","doi":"10.1109/INOW.2008.4634437","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634437","url":null,"abstract":"Optical communication is accepted as practical when the cost of introducing it is less than that of the conventional electronics. Silicon photonics is the prime candidates for low-cost highly integrated photonic devices because silicon semiconductor industry gives the most cost-effective and highly-integrated devices today. In addition to that, silicon as an optical material offers high-index contrast waveguides and hence it gives micro-meter scale passive optical devices. Those advantages could lead silicon photonics as a key technology for shorter interconnects such as on-chip networks as well as for long-haul telecommunication devices. Low cost integration of photonics with LSI using 3D-integration and surface-plasmon devices will be discussed briefly.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132685501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634450
L. Thylén, P. Ekaterina, B. Alexander
We discuss from a theoretical viewpoint the required advances in material technology and device structures needed to continue the rapid development of photonic circuit spatial integration density.
我们从理论的角度讨论了光子电路空间集成密度持续快速发展所需的材料技术和器件结构的进步。
{"title":"Nanophotonics in integrated photonics: A view on metamaterials and devices","authors":"L. Thylén, P. Ekaterina, B. Alexander","doi":"10.1109/INOW.2008.4634450","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634450","url":null,"abstract":"We discuss from a theoretical viewpoint the required advances in material technology and device structures needed to continue the rapid development of photonic circuit spatial integration density.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117149504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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