Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634566
H. Yonezawa, T. Maruyama, T. Okumura, N. Nishiyama, S. Arai
Injection type DFB lasers directly bonded on an SOI substrate were realized. A threshold current as low as 104 mA was obtained with a stripe width of 25 squarem and a cavity length of 1 mm.
{"title":"Injection Type GaInAsP/InP DFB lasers directly bonded on SOI substrate","authors":"H. Yonezawa, T. Maruyama, T. Okumura, N. Nishiyama, S. Arai","doi":"10.1109/INOW.2008.4634566","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634566","url":null,"abstract":"Injection type DFB lasers directly bonded on an SOI substrate were realized. A threshold current as low as 104 mA was obtained with a stripe width of 25 squarem and a cavity length of 1 mm.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129404348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634412
S. Kawata
Nanophotonics has recently achieved new dimensions in several aspects of nanoscience, such as nano-imaging, nano-analysis or even nano-manipulation of several kinds of samples ranging from semiconductors to biomolecules. The interaction volume between light and sample is classically restricted by so-called diffraction limit of light, which is about half of the wavelength of the probing light. We have jumped aver this classical limit in several nanophotonics technologies, such as in fabrication, in analysis and in imaging of samples at nanoscale, and have shown how light can interact with materials in a volume much smaller than the diffraction limits.
{"title":"Nanophotonics; walking beyond the classical limits of light","authors":"S. Kawata","doi":"10.1109/INOW.2008.4634412","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634412","url":null,"abstract":"Nanophotonics has recently achieved new dimensions in several aspects of nanoscience, such as nano-imaging, nano-analysis or even nano-manipulation of several kinds of samples ranging from semiconductors to biomolecules. The interaction volume between light and sample is classically restricted by so-called diffraction limit of light, which is about half of the wavelength of the probing light. We have jumped aver this classical limit in several nanophotonics technologies, such as in fabrication, in analysis and in imaging of samples at nanoscale, and have shown how light can interact with materials in a volume much smaller than the diffraction limits.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127057653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634471
F. Koyama
Our recent research activities on the manipulation of light in Bragg reflector waveguides will be reviewed. In this presentation, the potential and challenges for new functions of VCSEL structures will be described, which include the manipulation of optical phase based on VCSEL structures, slow light waveguide devices and tunable hallow waveguides.
{"title":"Tuning and slowing light in Bragg reflector waveguides","authors":"F. Koyama","doi":"10.1109/INOW.2008.4634471","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634471","url":null,"abstract":"Our recent research activities on the manipulation of light in Bragg reflector waveguides will be reviewed. In this presentation, the potential and challenges for new functions of VCSEL structures will be described, which include the manipulation of optical phase based on VCSEL structures, slow light waveguide devices and tunable hallow waveguides.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127838391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634537
H. Fares, Minoru Yamada, Y. Kuwamura, Masahiro Asada
For the electro-magnetic (EM) wave amplifier, we point out two amplification mechanisms should exist according to the relation between the EM wavelength and the electron size. First model is named as Coherent Electron Wave (CEW) model. Another one is named as Localized Electron (LE) model.
{"title":"Two models for electro-magnetic wave amplifier by utilizing traveling electron beam","authors":"H. Fares, Minoru Yamada, Y. Kuwamura, Masahiro Asada","doi":"10.1109/INOW.2008.4634537","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634537","url":null,"abstract":"For the electro-magnetic (EM) wave amplifier, we point out two amplification mechanisms should exist according to the relation between the EM wavelength and the electron size. First model is named as Coherent Electron Wave (CEW) model. Another one is named as Localized Electron (LE) model.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127957590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634504
D. Carlton, N. Emley, J. Bokor
Interacting Nano-scale magnetic islands show promise for low-power logic applications. Using anisotropy engineering we demonstrate through micromagnetic simulations a novel universal logic gate capable of signal fanout.
{"title":"Nanomagnetic cascade logic","authors":"D. Carlton, N. Emley, J. Bokor","doi":"10.1109/INOW.2008.4634504","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634504","url":null,"abstract":"Interacting Nano-scale magnetic islands show promise for low-power logic applications. Using anisotropy engineering we demonstrate through micromagnetic simulations a novel universal logic gate capable of signal fanout.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126642490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634478
J. Xiao, Yongzhen Huang, Yuede Yang
Numerical simulation of rate equations for QD SOAs under the injection of double sub-picosecond optical pulses shows that gain recovery has two fast time constants corresponding to carrier relaxations to ground and excited states.
{"title":"Effect of inhomogeneous broadening and injection level on gain recovery of quantum dot semiconductor optical amplifiers","authors":"J. Xiao, Yongzhen Huang, Yuede Yang","doi":"10.1109/INOW.2008.4634478","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634478","url":null,"abstract":"Numerical simulation of rate equations for QD SOAs under the injection of double sub-picosecond optical pulses shows that gain recovery has two fast time constants corresponding to carrier relaxations to ground and excited states.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"202 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116062090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634548
N. Xie, T. Hashimoto, K. Utaka
We present a compact polymer-based photonic switch with low power operation of 9 mW and a low switching crosstalk of -23 dB. Additional designs have shown lower power consumption less than 4 mW and crosstalk less than -40 dB.
{"title":"Compact and low power operation polymer MMI photonic switch","authors":"N. Xie, T. Hashimoto, K. Utaka","doi":"10.1109/INOW.2008.4634548","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634548","url":null,"abstract":"We present a compact polymer-based photonic switch with low power operation of 9 mW and a low switching crosstalk of -23 dB. Additional designs have shown lower power consumption less than 4 mW and crosstalk less than -40 dB.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"29 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132571707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634529
C. Chase, Ye Zhou, M. Huang, C. Chang-Hasnain
A wavelength tunable VCSEL utilizing an ultra thin, 145 nm high contrast grating with a large fabrication tolerance is presented. Single mode operation with a fast tuning speed of ~60 ns is experimentally demonstrated.
{"title":"Tunable VCSEL with a ultra thin high contrast grating for fast tuning with large fabrication tolerance","authors":"C. Chase, Ye Zhou, M. Huang, C. Chang-Hasnain","doi":"10.1109/INOW.2008.4634529","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634529","url":null,"abstract":"A wavelength tunable VCSEL utilizing an ultra thin, 145 nm high contrast grating with a large fabrication tolerance is presented. Single mode operation with a fast tuning speed of ~60 ns is experimentally demonstrated.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134302478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634535
Wang Lai, Luo Yi, Han Yanjun, Li Hongtao, Xi Guangyi, Jiang Yang, Zhao Wei
InGaN/GaN MQW LEDs grown by MOCVD with undoped and Si-doped barriers were investigated. It is found that the electrical characteristics are influenced intensively by the diffusion and compensation of Si and Mg dopants.
{"title":"Influence of Si-doping in the barriers on optical and electrical properties of InGaN/GaN MQW LEDs","authors":"Wang Lai, Luo Yi, Han Yanjun, Li Hongtao, Xi Guangyi, Jiang Yang, Zhao Wei","doi":"10.1109/INOW.2008.4634535","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634535","url":null,"abstract":"InGaN/GaN MQW LEDs grown by MOCVD with undoped and Si-doped barriers were investigated. It is found that the electrical characteristics are influenced intensively by the diffusion and compensation of Si and Mg dopants.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130388938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634442
S. Kinoshita
High-speed and high port-count optical switches are very attractive for optical interconnecting applications in high-performance computing systems. To make such optical switches practical, however, the reduction of both switch-size and power consumption is essential. This presentation discusses the optical interconnect architecture with monolithically-integrated SOA gate switch devices and compact packaging technology by novel module assembly.
{"title":"Applications of PICs for computer architecture and interconnects","authors":"S. Kinoshita","doi":"10.1109/INOW.2008.4634442","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634442","url":null,"abstract":"High-speed and high port-count optical switches are very attractive for optical interconnecting applications in high-performance computing systems. To make such optical switches practical, however, the reduction of both switch-size and power consumption is essential. This presentation discusses the optical interconnect architecture with monolithically-integrated SOA gate switch devices and compact packaging technology by novel module assembly.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115656007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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