Pub Date : 2026-01-16DOI: 10.1016/j.diamond.2026.113343
Youssef Miyah , Mohammed Benjelloun , Omar Boualam , Souad El Alami , Fatiha Mejbar , Ibtissam Bouabadi , Abdelilah Merabti , Noureddine El Messaoudi , Mouslim Messali , Ashraf M. Al-Msiedeen , Sanae Lairini
Sheep horn activated carbon with KOH (SHAC) proved to be an effective adsorbent for removing Crystal Violet (CV) and Congo Red (CR). Fourier Transform Infrared (FTIR) analyses confirmed the presence of –OH, –SH, CC, CN, NH, and COO functional groups derived from keratin, while Thermogravimetric Analysis coupled with Differential Thermal Analysis (TGA/DTA) revealed the decomposition of oxidized proteins and the crystallization of KOH-bound water. For CV, the optimal adsorption equilibrium efficiency reached 98.62% at [CV] = 40 mg L−1, dose = 1.25 g L−1, pH = 10, contact time = 50 min; adsorption followed the Langmuir and pseudo-first-order models, indicating physisorption with increasing disorder. For CR, the maximum equilibrium adsorption is 73.89% at [CR] = 40 mg L−1, adsorbent dose = 1.25 g L−1, pH = 2, contact time = 50 min following Temkin, Freundlich, and pseudo-first-order kinetics, reflecting endothermic physisorption. The Artificial Neural Network (ANN) models perform excellently (R2 = 0.965, MSE = 2.9374 for CV, and R2 = 0.9718, MSE = 4.963 for CR), and Box Behnken Design (BBD) confirms their validity (ANOVA p-value = 0.0038 for CV, 0 for CR, Cook's distance <0.2). Density Functional Theory (DFT) calculations show that CV (ΔE = 1.735 eV, S = 0.567 eV, ω = 9.175 eV) is more reactive than CR (ΔE = 2.833 eV, η = 1.416 eV). Electrostatic potential (ESP) maps and Fukui indices identify nitrogen atoms, aromatic carbon atoms, and –SO3− and –N=N– groups as active sites. After 5 thermal regeneration cycles, SHAC retains 69% of its capacity for CV and 23% for CR. The adsorption cost is estimated at $0.32 L−1, confirming the efficiency, durability, and cost-effectiveness of SHAC.
{"title":"Toxic dyes adsorption using sheep horn activated carbon: Mechanism, DFT study, artificial neural network, Box–Behnken modeling, and cost estimation","authors":"Youssef Miyah , Mohammed Benjelloun , Omar Boualam , Souad El Alami , Fatiha Mejbar , Ibtissam Bouabadi , Abdelilah Merabti , Noureddine El Messaoudi , Mouslim Messali , Ashraf M. Al-Msiedeen , Sanae Lairini","doi":"10.1016/j.diamond.2026.113343","DOIUrl":"10.1016/j.diamond.2026.113343","url":null,"abstract":"<div><div>Sheep horn activated carbon with KOH (SHAC) proved to be an effective adsorbent for removing Crystal Violet (CV) and Congo Red (CR). Fourier Transform Infrared (FTIR) analyses confirmed the presence of –OH, –SH, C<img>C, C<img>N, N<img>H, and COO functional groups derived from keratin, while Thermogravimetric Analysis coupled with Differential Thermal Analysis (TGA/DTA) revealed the decomposition of oxidized proteins and the crystallization of KOH-bound water. For CV, the optimal adsorption equilibrium efficiency reached 98.62% at [CV] = 40 mg L<sup>−1</sup>, dose = 1.25 g L<sup>−1</sup>, pH = 10, contact time = 50 min; adsorption followed the Langmuir and pseudo-first-order models, indicating physisorption with increasing disorder. For CR, the maximum equilibrium adsorption is 73.89% at [CR] = 40 mg L<sup>−1</sup>, adsorbent dose = 1.25 g L<sup>−1</sup>, pH = 2, contact time = 50 min following Temkin, Freundlich, and pseudo-first-order kinetics, reflecting endothermic physisorption. The Artificial Neural Network (ANN) models perform excellently (R<sup>2</sup> = 0.965, MSE = 2.9374 for CV, and R<sup>2</sup> = 0.9718, MSE = 4.963 for CR), and Box Behnken Design (BBD) confirms their validity (ANOVA <em>p</em>-value = 0.0038 for CV, 0 for CR, Cook's distance <0.2). Density Functional Theory (DFT) calculations show that CV (ΔE = 1.735 eV, S = 0.567 eV, ω = 9.175 eV) is more reactive than CR (ΔE = 2.833 eV, η = 1.416 eV). Electrostatic potential (ESP) maps and Fukui indices identify nitrogen atoms, aromatic carbon atoms, and –SO<sub>3</sub><sup>−</sup> and –N=N– groups as active sites. After 5 thermal regeneration cycles, SHAC retains 69% of its capacity for CV and 23% for CR. The adsorption cost is estimated at $0.32 L<sup>−1</sup>, confirming the efficiency, durability, and cost-effectiveness of SHAC.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113343"},"PeriodicalIF":5.1,"publicationDate":"2026-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146036664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Porous polymer aerogels are emerging as the next generation of electromagnetic wave (EMW) absorbers due to their low density, adaptability, environmental friendliness, broad bandwidth and high dielectric loss. In this study, different ratios (35, 50 and 75 wt%) of MoSe₂/MWCNT/MMT nanocomposites which were named as C2-C4 and MWCNT-free was named as C1 were incorporated into the chitosan matrix as filler with different weight ratios to chitosan and the ultralight and multidimensional MoSe₂/MWCNT/MMT-Chitosan aerogels were prepared via freeze-drying. MoSe₂/MWCNT/MMT (50 wt%)-Chitosan (C3) composite was the optimized sample exhibiting the highest reflection loss of −84.40 dB at a thickness of 2.6 mm, with a remarkable bandwidth of 10 GHz covering the entire X and Ku bands. This exceptional performance is attributed to the synergistic effects of various loss mechanisms, including the conduction loss facilitated by Multi-walled carbon nanotube) MWCNT(, the dipole and interfacial polarizations created by MoSe₂ and Montmorillonite) MMT(, and the multiphase activity due to the polygonal porous morphology. Notably, this high microwave absorption efficiency is achieved without magnetic components, offering significant potential for the design of advanced, lightweight, stable, and high-performance microwave absorbers. The radar cross-section (RCS) and far-field measurements demonstrated that coating a perfect electric conductor (PEC) sphere with each composite of C1, C2 and C3 led to a pronounced attenuation effect, achieving reductions of about 30–48 dB in RCS and 18 dB in the scattered far-field intensity.
{"title":"Ultralight and multidimensional chitosan-based aerogel composites with an enhanced microwave absorption performance","authors":"Mahdieh Dehghani-Dashtabi, Hoda Hekmatara, Masoud Mohebbi","doi":"10.1016/j.diamond.2026.113333","DOIUrl":"10.1016/j.diamond.2026.113333","url":null,"abstract":"<div><div>Porous polymer aerogels are emerging as the next generation of electromagnetic wave (EMW) absorbers due to their low density, adaptability, environmental friendliness, broad bandwidth and high dielectric loss. In this study, different ratios (35, 50 and 75 wt%) of MoSe₂/MWCNT/MMT nanocomposites which were named as C2-C4 and MWCNT-free was named as C1 were incorporated into the chitosan matrix as filler with different weight ratios to chitosan and the ultralight and multidimensional MoSe₂/MWCNT/MMT-Chitosan aerogels were prepared via freeze-drying. MoSe₂/MWCNT/MMT (50 wt%)-Chitosan (C3) composite was the optimized sample exhibiting the highest reflection loss of −84.40 dB at a thickness of 2.6 mm, with a remarkable bandwidth of 10 GHz covering the entire X and Ku bands. This exceptional performance is attributed to the synergistic effects of various loss mechanisms, including the conduction loss facilitated by Multi-walled carbon nanotube) MWCNT(, the dipole and interfacial polarizations created by MoSe₂ and Montmorillonite) MMT(, and the multiphase activity due to the polygonal porous morphology. Notably, this high microwave absorption efficiency is achieved without magnetic components, offering significant potential for the design of advanced, lightweight, stable, and high-performance microwave absorbers. The radar cross-section (RCS) and far-field measurements demonstrated that coating a perfect electric conductor (PEC) sphere with each composite of C1, C2 and C3 led to a pronounced attenuation effect, achieving reductions of about 30–48 dB in RCS and 18 dB in the scattered far-field intensity.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113333"},"PeriodicalIF":5.1,"publicationDate":"2026-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146075440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Color transformations of yellow type Ib synthetic diamond subjected to high dose electron irradiation followed by annealing at moderate temperatures have been studied. Neutral vacancies and interstitial-vacancy complexes unstable to high temperature are shown to be the major intrinsic defects underlying the process of the color transformations, which are distinguished by two annealing stages: at about 300–400 °C for interstitial-vacancy complexes and 750–850 °C for vacancies. It has been found that annealing at temperatures from 550 to 650 °C may result in total removal of yellow color. This discoloration is explained by the conversion of neutral nitrogen C-defects into positively charged N+ defects, partial annealing of neutral vacancies (GR1 centers) and disappearance of the broad absorption 2 eV band (maximum at a wavelength 630 nm), which is attributed to neutral vacancies interacting with nearby interstitials (interstitial-vacancy complexes). Annealing at temperatures above 650 °C produces purple color in areas with high nitrogen concentration due to dominating NV− defects, and yellow color in areas with low nitrogen concentration due to dominating NV0 defects.
{"title":"Color evolution of type Ib synthetic diamonds after high dose electron irradiation followed by low-temperature annealing","authors":"N.M. Kazuchits , V.N. Kazuchits , M.S. Rusetsky , A.M. Zaitsev","doi":"10.1016/j.diamond.2026.113334","DOIUrl":"10.1016/j.diamond.2026.113334","url":null,"abstract":"<div><div>Color transformations of yellow type Ib synthetic diamond subjected to high dose electron irradiation followed by annealing at moderate temperatures have been studied. Neutral vacancies and interstitial-vacancy complexes unstable to high temperature are shown to be the major intrinsic defects underlying the process of the color transformations, which are distinguished by two annealing stages: at about 300–400 °C for interstitial-vacancy complexes and 750–850 °C for vacancies. It has been found that annealing at temperatures from 550 to 650 °C may result in total removal of yellow color. This discoloration is explained by the conversion of neutral nitrogen C-defects into positively charged N<sup>+</sup> defects, partial annealing of neutral vacancies (GR1 centers) and disappearance of the broad absorption 2 eV band (maximum at a wavelength 630 nm), which is attributed to neutral vacancies interacting with nearby interstitials (interstitial-vacancy complexes). Annealing at temperatures above 650 °C produces purple color in areas with high nitrogen concentration due to dominating NV<sup>−</sup> defects, and yellow color in areas with low nitrogen concentration due to dominating NV<sup>0</sup> defects.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113334"},"PeriodicalIF":5.1,"publicationDate":"2026-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146001709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-16DOI: 10.1016/j.diamond.2026.113339
Ou Zhang , Fang Jiao , Gang-Qin Liu , Sichen Mi , Feng Luo
Fabrication of nanostructures in single-crystal diamond is of crucial importance for various applications in sensing, optics, electronics, microelectromechanical systems (MEMS), etc. However, it is not trivial to achieve some design requirements of these nanostructures in fabrication processes, especially when certain device concepts require high aspect-ratio (HAR), exact tapering angle, or sharp edge/tip radius. We devise and demonstrate a top-down process flow leveraging self-aligned patterning technique that allows us to fabricate stepped conical nanopillars with height ranging from 3 to 5.5 μm, and tip radius from 5 to 200 nm. This stepped structure can be designed and manufactured for enhanced stiffness or for extended aspect ratio depending on device requirements. The fabrication process is applicable for standard wafer-level MEMS foundries, and could be readily used for the fabrication of scanning probes, electron emission electrodes, nanoindenter tips, etc., with high uniformity and repeatability in a scaled up fashion.
{"title":"Self-aligned patterning process for high aspect-ratio nanostructuring in single-crystal diamond","authors":"Ou Zhang , Fang Jiao , Gang-Qin Liu , Sichen Mi , Feng Luo","doi":"10.1016/j.diamond.2026.113339","DOIUrl":"10.1016/j.diamond.2026.113339","url":null,"abstract":"<div><div>Fabrication of nanostructures in single-crystal diamond is of crucial importance for various applications in sensing, optics, electronics, microelectromechanical systems (MEMS), etc. However, it is not trivial to achieve some design requirements of these nanostructures in fabrication processes, especially when certain device concepts require high aspect-ratio (HAR), exact tapering angle, or sharp edge/tip radius. We devise and demonstrate a top-down process flow leveraging self-aligned patterning technique that allows us to fabricate stepped conical nanopillars with height ranging from 3 to 5.5 μm, and tip radius from 5 to 200 nm. This stepped structure can be designed and manufactured for enhanced stiffness or for extended aspect ratio depending on device requirements. The fabrication process is applicable for standard wafer-level MEMS foundries, and could be readily used for the fabrication of scanning probes, electron emission electrodes, nanoindenter tips, etc., with high uniformity and repeatability in a scaled up fashion.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113339"},"PeriodicalIF":5.1,"publicationDate":"2026-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146001764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-16DOI: 10.1016/j.diamond.2026.113331
Ting Xue , Kai Zhang , Yu Wang , Lingrong Kong
This study systematically evaluated the tribological behaviors of polycrystalline diamond compact (PDC) when paired with various materials in high temperature drilling fluid. The results demonstrated that PDC/Si3N4 exhibited excellent overall performance under high temperature, with both the coefficient of friction and wear rate being significantly lower than those at room temperature. This phenomenon was attributed to an effective wear-oxidation lubrication mechanism: high temperature promoted the formation of a composite synergistic film consisting of both oxide layer and carbonaceous material. In contrast, although PDC/steel showed reduced the coefficient of friction under high temperature, this was accompanied by an increased wear rate. The decrease in the coefficient of friction primarily originated from decreased shear strength due to material softening and improved graphitization degree within the transfer layer. However, high temperature also aggravated both oxidation processes and adhesive wear. Coupled with the corrosion induced by Cl− in the drilling fluid, multiple failure mechanisms interacted synergistically, leading to accelerated wear.
{"title":"Tribological behavior of polycrystalline diamond compact in high temperature drilling fluid: Revealing the wear-oxidation/corrosion synergistic effect","authors":"Ting Xue , Kai Zhang , Yu Wang , Lingrong Kong","doi":"10.1016/j.diamond.2026.113331","DOIUrl":"10.1016/j.diamond.2026.113331","url":null,"abstract":"<div><div>This study systematically evaluated the tribological behaviors of polycrystalline diamond compact (PDC) when paired with various materials in high temperature drilling fluid. The results demonstrated that PDC/Si<sub>3</sub>N<sub>4</sub> exhibited excellent overall performance under high temperature, with both the coefficient of friction and wear rate being significantly lower than those at room temperature. This phenomenon was attributed to an effective wear-oxidation lubrication mechanism: high temperature promoted the formation of a composite synergistic film consisting of both oxide layer and carbonaceous material. In contrast, although PDC/steel showed reduced the coefficient of friction under high temperature, this was accompanied by an increased wear rate. The decrease in the coefficient of friction primarily originated from decreased shear strength due to material softening and improved graphitization degree within the transfer layer. However, high temperature also aggravated both oxidation processes and adhesive wear. Coupled with the corrosion induced by Cl<sup>−</sup> in the drilling fluid, multiple failure mechanisms interacted synergistically, leading to accelerated wear.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113331"},"PeriodicalIF":5.1,"publicationDate":"2026-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146036766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-15DOI: 10.1016/j.diamond.2026.113328
Bochun Li , Kesheng Guo , Yuxiang Xu , Bin He , Xiaodong Guo , Yinghao Xuan , Lang Hu , Qiang Hu , Wei Dai , Qimin Wang
Doped diamond coatings, as a novel electrode material with wide potential windows, high stability, and low adsorption, hold great promise for electrochemical and water purification applications. This study reports, for the first time, the preparation of SnBDD boron‑tin co-doped diamond coatings using the MPCVD method. By controlling the laser treatment process, elements B and Sn were doped into the diamond, and the surface morphology, elemental composition, and electrochemical performance were analyzed. It was detected that Sn formed bonds with C, confirming its successful incorporation into the diamond coating. Furthermore, Material Studio was used to simulate and analyze spectral changes after diamond doping. Experiments showed that the potential window of the diamond coating doped with B and Sn elements expanded by approximately 0.5–1.7 eV, enhancing its performance and durability as an electrode for water purification and SnBDD electrodes achieved ∼97% transmittance within 60 min of simulated wastewater treatment, Simultaneously, the absorbance of the simulated waste liquid significantly decreased after treatment, demonstrating near-complete organic decomposition and superior performance over single-doped BDD electrodes. These findings open avenues for multi-element doping strategies to further enhance diamond electrodes' performance and durability for advanced electrochemical applications.
{"title":"Research on diamond deposition doped with B and Sn by laser irradiation in MPCVD and its electrochemical properties","authors":"Bochun Li , Kesheng Guo , Yuxiang Xu , Bin He , Xiaodong Guo , Yinghao Xuan , Lang Hu , Qiang Hu , Wei Dai , Qimin Wang","doi":"10.1016/j.diamond.2026.113328","DOIUrl":"10.1016/j.diamond.2026.113328","url":null,"abstract":"<div><div>Doped diamond coatings, as a novel electrode material with wide potential windows, high stability, and low adsorption, hold great promise for electrochemical and water purification applications. This study reports, for the first time, the preparation of SnBDD boron‑tin co-doped diamond coatings using the MPCVD method. By controlling the laser treatment process, elements B and Sn were doped into the diamond, and the surface morphology, elemental composition, and electrochemical performance were analyzed. It was detected that Sn formed bonds with C, confirming its successful incorporation into the diamond coating. Furthermore, Material Studio was used to simulate and analyze spectral changes after diamond doping. Experiments showed that the potential window of the diamond coating doped with B and Sn elements expanded by approximately 0.5–1.7 eV, enhancing its performance and durability as an electrode for water purification and SnBDD electrodes achieved ∼97% transmittance within 60 min of simulated wastewater treatment, Simultaneously, the absorbance of the simulated waste liquid significantly decreased after treatment, demonstrating near-complete organic decomposition and superior performance over single-doped BDD electrodes. These findings open avenues for multi-element doping strategies to further enhance diamond electrodes' performance and durability for advanced electrochemical applications.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113328"},"PeriodicalIF":5.1,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146001767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-15DOI: 10.1016/j.diamond.2026.113324
J. Sebastin Anitha , Govindhasamy Murugadoss , Nachimuthu Venkatesh , R. Ragu , J. Emima Jeronsia
The escalating demand for advanced wastewater treatment strategies has catalysed the development of next-generation photocatalytic materials capable of concurrently degrading organic pollutants and inactivating microbial pathogens. This work presents the hydrothermal synthesis of a reduced graphene oxide/BiFeO3 (rGO/BF) nanocomposite for dual photocatalytic and antibacterial environmental remediation. The photocatalytic performance of the as-synthesized rGO/BF nanocomposite was systematically investigated by varying catalyst dosages (0.2 g/L, 0.3 g/L and 0.4 g/L). Notably, the 0.3 g/L dosage exhibited optimal activity, achieving an impressive 95.8% degradation of 20 ppm methyl orange (MO) under visible light irradiation within 120 min. Kinetic analysis based on pseudo first order model revealed that rGO/BF photocatalyst shows a rate constant (k) value of 0.0467 min−1 with a high correlation coefficient (R2 = 0.9629). The bactericidal efficacy of the rGO/BF nanocomposite was systematically assessed using the well diffusion method against both Gram-positive bacteria - Bacillus subtilis, Staphylococcus aureus, and Bacillus cereus and Gram-negative strains including Pseudomonas aeruginosa, Vibrio cholerae, and Klebsiella pneumonia. Remarkably, the rGO/BF nanocomposite manifest better antibacterial activity against Staphylococcus aureus, with a substantial zone of inhibition measuring
15.5 mm. The rGO/BF nanocomposite demonstrates improved visible-light photocatalytic and antibacterial performance, highlighting its potential for multifunctional environmental remediation.
{"title":"Dual functional rGO/BiFeO3 nanocomposites for efficient visible light photocatalysis and bactericidal performance","authors":"J. Sebastin Anitha , Govindhasamy Murugadoss , Nachimuthu Venkatesh , R. Ragu , J. Emima Jeronsia","doi":"10.1016/j.diamond.2026.113324","DOIUrl":"10.1016/j.diamond.2026.113324","url":null,"abstract":"<div><div>The escalating demand for advanced wastewater treatment strategies has catalysed the development of next-generation photocatalytic materials capable of concurrently degrading organic pollutants and inactivating microbial pathogens. This work presents the hydrothermal synthesis of a reduced graphene oxide/BiFeO<sub>3</sub> (rGO/BF) nanocomposite for dual photocatalytic and antibacterial environmental remediation. The photocatalytic performance of the as-synthesized rGO/BF nanocomposite was systematically investigated by varying catalyst dosages (0.2 g/L, 0.3 g/L and 0.4 g/L). Notably, the 0.3 g/L dosage exhibited optimal activity, achieving an impressive 95.8% degradation of 20 ppm methyl orange (MO) under visible light irradiation within 120 min. Kinetic analysis based on pseudo first order model revealed that rGO/BF photocatalyst shows a rate constant (k) value of 0.0467 min<sup>−1</sup> with a high correlation coefficient (R<sup>2</sup> = 0.9629). The bactericidal efficacy of the rGO/BF nanocomposite was systematically assessed using the well diffusion method against both Gram-positive bacteria - <em>Bacillus subtilis</em>, <em>Staphylococcus aureus</em>, and <em>Bacillus cereus</em> and Gram-negative strains including <em>Pseudomonas aeruginosa</em>, <em>Vibrio cholerae</em>, and <em>Klebsiella pneumonia.</em> Remarkably, the rGO/BF nanocomposite manifest better antibacterial activity against <em>Staphylococcus aureus</em>, with a substantial zone of inhibition measuring</div><div>15.5 mm. The rGO/BF nanocomposite demonstrates improved visible-light photocatalytic and antibacterial performance, highlighting its potential for multifunctional environmental remediation.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113324"},"PeriodicalIF":5.1,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146036768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-15DOI: 10.1016/j.diamond.2026.113332
Li-Yong Chen , Zheng-Hui Wang , Yan-Yan Liu , Su-Fang Wang , Yu-Ling Song
Efficient methane (CH4) decomposition is of fantastic importance for energy transition and environmental protection. In this paper, we explored the dehydrogenation reactions of CH4 on the clean twin T-graphene (TTG) and TM-doped TTG (TM@TTG, TM = Fe, Pd, and Pt), using the first-principles methods. It is found that the doping of TM facilitates the activation and dehydrogenation of CH4. On the TTG surface, both CH2 and CH dissociation steps probably are rate-limiting step, while the rate-controlling step may be the CH2 dissociation for the continuous dehydrogenation of CH4 molecule on the TM@TTG surfaces. Furthermore, the analysis of transition state reveals that, different from other system where consecutive dehydrogenation of CH4 is expected to be achieved, methyl has the potential to form C2H6 rather than undergoing further dissociation in the case of Pt@TTG substrate. The impact of temperature on the CH4 dehydrogenation on TM@TTG is also explored. The results suggest that the dehydrogenation of CH4 on TTG surface can be significantly modulated via a moderate doping of transition metals, and provide a new perspective to design the decomposition process of CH4 molecule.
{"title":"Controllable dehydrogenation process of CH4 on twin T-graphene substrate","authors":"Li-Yong Chen , Zheng-Hui Wang , Yan-Yan Liu , Su-Fang Wang , Yu-Ling Song","doi":"10.1016/j.diamond.2026.113332","DOIUrl":"10.1016/j.diamond.2026.113332","url":null,"abstract":"<div><div>Efficient methane (CH<sub>4</sub>) decomposition is of fantastic importance for energy transition and environmental protection. In this paper, we explored the dehydrogenation reactions of CH<sub>4</sub> on the clean twin T-graphene (TTG) and TM-doped TTG (TM@TTG, TM = Fe, Pd, and Pt), using the first-principles methods. It is found that the doping of TM facilitates the activation and dehydrogenation of CH<sub>4</sub>. On the TTG surface, both CH<sub>2</sub> and CH dissociation steps probably are rate-limiting step, while the rate-controlling step may be the CH<sub>2</sub> dissociation for the continuous dehydrogenation of CH<sub>4</sub> molecule on the TM@TTG surfaces. Furthermore, the analysis of transition state reveals that, different from other system where consecutive dehydrogenation of CH<sub>4</sub> is expected to be achieved, methyl has the potential to form C<sub>2</sub>H<sub>6</sub> rather than undergoing further dissociation in the case of Pt@TTG substrate. The impact of temperature on the CH<sub>4</sub> dehydrogenation on TM@TTG is also explored. The results suggest that the dehydrogenation of CH<sub>4</sub> on TTG surface can be significantly modulated via a moderate doping of transition metals, and provide a new perspective to design the decomposition process of CH<sub>4</sub> molecule.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113332"},"PeriodicalIF":5.1,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146036886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Boron-doped nano-polycrystalline diamond (B-NPD) was attempted to be synthesized at 15 GPa and 2000 °C using a Kawai-type high-pressure generation apparatus. Two B-NPD black and opaque samples of which grain sizes were 98 ± 8 and 119 ± 10 nm, were successfully prepared. Their boron concentrations inspected by secondary ion mass spectroscopy (SIMS) were 568 ± 11 and 3301 ± 34 ppm, respectively, while the values calculated by the substitutional lattice expansion model using their lattice parameters (0.356746(1) and 0.356763(1) nm) were lower, 530 ± 39 and 863 ± 39 ppm, respectively. Synchrotron X-ray diffraction measurements of these samples exhibited no peaks of the carbon materials and boron‑carbon compounds. STEM-EELS analysis revealed that boron atoms in the higher boron-concentration sample were clearly segregated at grain boundaries where the sp2 state of carbon is enhanced. Present and previous studies indicate that the distribution of boron in diamond materials is affected by the presence of defective areas, such as grain boundaries and twin boundaries.
{"title":"High pressure synthesis and boron distribution of boron-doped nano-polycrystalline diamond","authors":"Fumihide Sakano , Kazuhiro Ikeda , Koji Kuramochi , Takuya Sasaki , Ken Niwa , Norimasa Nishiyama , Yutaka Kobayashi , Masashi Hasegawa","doi":"10.1016/j.diamond.2026.113311","DOIUrl":"10.1016/j.diamond.2026.113311","url":null,"abstract":"<div><div>Boron-doped nano-polycrystalline diamond (B-NPD) was attempted to be synthesized at 15 GPa and 2000 °C using a Kawai-type high-pressure generation apparatus. Two B-NPD black and opaque samples of which grain sizes were 98 ± 8 and 119 ± 10 nm, were successfully prepared. Their boron concentrations inspected by secondary ion mass spectroscopy (SIMS) were 568 ± 11 and 3301 ± 34 ppm, respectively, while the values calculated by the substitutional lattice expansion model using their lattice parameters (0.356746(1) and 0.356763(1) nm) were lower, 530 ± 39 and 863 ± 39 ppm, respectively. Synchrotron X-ray diffraction measurements of these samples exhibited no peaks of the carbon materials and boron‑carbon compounds. STEM-EELS analysis revealed that boron atoms in the higher boron-concentration sample were clearly segregated at grain boundaries where the sp<sup>2</sup> state of carbon is enhanced. Present and previous studies indicate that the distribution of boron in diamond materials is affected by the presence of defective areas, such as grain boundaries and twin boundaries.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113311"},"PeriodicalIF":5.1,"publicationDate":"2026-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146075437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-14DOI: 10.1016/j.diamond.2026.113327
Jiaqi Xia , Liangxue Gu , Shuang Ye , Shulong Zhang , Zhonghao Ye , Man Ye , Chengchun Zhao , Shulin Gu , Yin Hang
Boron-doped diamond (BDD) is a promising material for semiconductor applications due to diamond's outstanding properties. Nonetheless, achieving efficient p-type conductivity remains challenging as relatively deep acceptor level at low boron doping concentrations yields low activation efficiency, limiting room temperature carrier concentration, while heavy doping reduces mobility through impurity scattering and defect formation. This study aims to address these issues via high-pressure and high-temperature (HPHT) annealing. Chemical vapor deposition (CVD)-grown BDD samples were annealed at 5 GPa across 1100 to 2000 °C to systematically investigate electrical and optical properties evolution. The results demonstrate that annealing at suitable temperature increases carrier concentration by more than an order of magnitude and electrical conductivity by over fourfold, with the effect strongly dependent on annealing temperature and doping concentration. Comprehensive spectroscopic analyses reveal several factors contributing to the annealing temperature-dependent behavior of carriers, including lattice strain relaxation, modifications in boron-bound excitons, and nitrogen-vacancy center transformation. Additionally, the optimal annealing temperature varies significantly with doping concentration. These findings indicate that HPHT processing is a viable approach to overcome doping constraints in BDD, advancing its implementation in electronic devices.
{"title":"Optical and electrical properties of CVD boron-doped diamond following HPHT annealing","authors":"Jiaqi Xia , Liangxue Gu , Shuang Ye , Shulong Zhang , Zhonghao Ye , Man Ye , Chengchun Zhao , Shulin Gu , Yin Hang","doi":"10.1016/j.diamond.2026.113327","DOIUrl":"10.1016/j.diamond.2026.113327","url":null,"abstract":"<div><div>Boron-doped diamond (BDD) is a promising material for semiconductor applications due to diamond's outstanding properties. Nonetheless, achieving efficient p-type conductivity remains challenging as relatively deep acceptor level at low boron doping concentrations yields low activation efficiency, limiting room temperature carrier concentration, while heavy doping reduces mobility through impurity scattering and defect formation. This study aims to address these issues via high-pressure and high-temperature (HPHT) annealing. Chemical vapor deposition (CVD)-grown BDD samples were annealed at 5 GPa across 1100 to 2000 °C to systematically investigate electrical and optical properties evolution. The results demonstrate that annealing at suitable temperature increases carrier concentration by more than an order of magnitude and electrical conductivity by over fourfold, with the effect strongly dependent on annealing temperature and doping concentration. Comprehensive spectroscopic analyses reveal several factors contributing to the annealing temperature-dependent behavior of carriers, including lattice strain relaxation, modifications in boron-bound excitons, and nitrogen-vacancy center transformation. Additionally, the optimal annealing temperature varies significantly with doping concentration. These findings indicate that HPHT processing is a viable approach to overcome doping constraints in BDD, advancing its implementation in electronic devices.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"162 ","pages":"Article 113327"},"PeriodicalIF":5.1,"publicationDate":"2026-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145973420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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