Diamond and Related Materials最新文献_第3页

Exploring sulfate-driven enhancement pseudocapacitive: A new study on the structural, electrochemical, and kinetic properties of NiSO₄ quantum-dot-decorated g-C₃N₄ nanosheets 探索硫酸盐驱动的增强赝电容：NiSO₄量子点修饰的g-C₃N₄纳米片的结构、电化学和动力学性质的新研究

IF 5.1 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials

Pub Date : 2026-02-03 DOI: 10.1016/j.diamond.2026.113406

Nagih M. Shaalan , Hany M. Abd El-Lateef , Sajid A. Ansari , Mohamad M. Ahmad , Abdullah Aljaafari , A.R. Altayar , Shalendra Kumar , Faheem Ahmad

This work demonstrates, for the first time, NiSO₄ quantum dots uniformly attached to g-C₃N₄ nanosheets. It reveals sulfate-driven enhancement of Ni²⁺/Ni³⁺ redox pseudocapacitance in alkaline media, activating g-C₃N₄ via NiSO₄(1-x)@g-C₃N₄(x) (x = 1.0, 0.9, 0.5, 0.2) systematically tuning loading effects. XRD confirms the coexistence of anhydrous NiSO₄ and NiSO₄·6H₂O phases with average crystallite size between 7 and 11 nm. HRTEM verifies uniformly distributed NiSO₄ quantum dots with an average size of ∼7 nm (2–10 nm distribution), and XPS confirms Ni²⁺ oxysulfate species strongly bound to g-C₃N₄ with abundant accessible redox sites for Ni²⁺/Ni³⁺ ions. For the optimized nanostructures with x = 0.2 and 0.5, higher charge-storage capacitance is observed, with maximal specific capacitances of 503.8 F g⁻¹ at a scan rate of 2 mV s⁻¹ and 492.9 F g⁻¹ at a current density of 0.5 A g⁻¹. Trasatti and Randles-Sevcik analyses EIS reveals dominant pseudocapacitive contributions. Furthermore, full cell exhibits a capacitance of 39.4 F g⁻¹ at 0.25 A g⁻¹, establishing NiSO₄ quantum-dot decoration as the first sulfate-driven pseudocapacitance strategy for activating g-C₃N₄ and providing new mechanistic insight into

S O_{4}^{2 -}

-enhanced Ni redox kinetics for high-performance supercapacitor applications. Post-cycling analyses reveal gradual

S O_{4}^{2 -}

leaching from NiSO₄ QDs into the alkaline media, forming Ni-oxide/hydroxide phases while preserving Ni²⁺/Ni³⁺ redox activity, demonstrating sulfates as initial conductivity enhancers with stable Ni-phases sustaining long-term pseudocapacitance.

这项工作首次证明了NiSO₄量子点均匀地附着在g-C₃N₄纳米片上。通过NiSO₄（1-x）@g-C₃N₄(x) （x = 1.0, 0.9, 0.5, 0.2）激活g-C₃N₄(x)，系统调节加载效果，揭示了硫酸盐驱动的碱性介质中Ni2+/Ni3+氧化还原赝电容增强作用。XRD证实无水NiSO₄和NiSO₄·6H₂O相共存，平均晶粒尺寸在7 ~ 11 nm之间。HRTEM证实了平均尺寸为~ 7 nm （2-10 nm分布）的均匀分布的NiSO₄量子点，XPS证实了与g-C₃N₄紧密结合的Ni2+氧硫酸盐物质具有丰富的Ni2+/Ni3+离子可达的氧化还原位点。对于x = 0.2和0.5的优化纳米结构，观察到更高的电荷存储电容，在扫描速率为2 mV s−1时的最大比电容为503.8 F g−1，在电流密度为0.5 ag−1时的最大比电容为492.9 F g−1。Trasatti和Randles-Sevcik分析EIS揭示了主要的伪电容贡献。此外，在0.25 a g−1下，全电池的电容值为39.4 F g−1，建立了NiSO₄量子点装饰作为激活g- c₃N₄的第一个硫酸盐驱动赝电容策略，并为高性能超级电容器应用中SO42−增强的Ni氧化还原动力学提供了新的机制见解。循环后分析表明，NiSO₄QDs中的SO42−逐渐浸出到碱性介质中，形成ni氧化物/氢氧化物相，同时保持Ni2+/Ni3+氧化还原活性，表明硫酸盐是初始电导率增强剂，具有稳定的ni相，维持长期的赝电容。

{"title":"Exploring sulfate-driven enhancement pseudocapacitive: A new study on the structural, electrochemical, and kinetic properties of NiSO₄ quantum-dot-decorated g-C₃N₄ nanosheets","authors":"Nagih M. Shaalan , Hany M. Abd El-Lateef , Sajid A. Ansari , Mohamad M. Ahmad , Abdullah Aljaafari , A.R. Altayar , Shalendra Kumar , Faheem Ahmad","doi":"10.1016/j.diamond.2026.113406","DOIUrl":"10.1016/j.diamond.2026.113406","url":null,"abstract":"<div><div>This work demonstrates, for the first time, NiSO₄ quantum dots uniformly attached to g-C₃N₄ nanosheets. It reveals sulfate-driven enhancement of Ni<sup>2+</sup>/Ni<sup>3+</sup> redox pseudocapacitance in alkaline media, activating g-C₃N₄ via NiSO₄(1-x)@g-C₃N₄(x) (x = 1.0, 0.9, 0.5, 0.2) systematically tuning loading effects. XRD confirms the coexistence of anhydrous NiSO₄ and NiSO₄·6H₂O phases with average crystallite size between 7 and 11 nm. HRTEM verifies uniformly distributed NiSO₄ quantum dots with an average size of ∼7 nm (2–10 nm distribution), and XPS confirms Ni<sup>2+</sup> oxysulfate species strongly bound to g-C₃N₄ with abundant accessible redox sites for Ni<sup>2+</sup>/Ni<sup>3+</sup> ions. For the optimized nanostructures with <em>x</em> = 0.2 and 0.5, higher charge-storage capacitance is observed, with maximal specific capacitances of 503.8 F g<sup>−1</sup> at a scan rate of 2 mV s<sup>−1</sup> and 492.9 F g<sup>−1</sup> at a current density of 0.5 A g<sup>−1</sup>. Trasatti and Randles-Sevcik analyses EIS reveals dominant pseudocapacitive contributions. Furthermore, full cell exhibits a capacitance of 39.4 F g<sup>−1</sup> at 0.25 A g<sup>−1</sup>, establishing NiSO₄ quantum-dot decoration as the first sulfate-driven pseudocapacitance strategy for activating g-C₃N₄ and providing new mechanistic insight into <span><math><mi>S</mi><msubsup><mi>O</mi><mn>4</mn><mrow><mn>2</mn><mo>−</mo></mrow></msubsup></math></span>-enhanced Ni redox kinetics for high-performance supercapacitor applications. Post-cycling analyses reveal gradual <span><math><mi>S</mi><msubsup><mi>O</mi><mn>4</mn><mrow><mn>2</mn><mo>−</mo></mrow></msubsup></math></span>leaching from NiSO₄ QDs into the alkaline media, forming Ni-oxide/hydroxide phases while preserving Ni<sup>2+</sup>/Ni<sup>3+</sup> redox activity, demonstrating sulfates as initial conductivity enhancers with stable Ni-phases sustaining long-term pseudocapacitance.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113406"},"PeriodicalIF":5.1,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146185370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Selective, Non-Enzymatic Electrochemical Detection of Dopamine Using a Green-Synthesized CuO/rGO Nanocomposite-Modified Electrode 利用绿色合成的CuO/rGO纳米复合修饰电极选择性非酶电化学检测多巴胺

IF 5.1 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials

Pub Date : 2026-02-03 DOI: 10.1016/j.diamond.2026.113407

Rituparna Deo , Maya Devi

A non-enzymatic electrochemical sensor was developed for selective detection of dopamine (DA) in the presence of ascorbic acid (AA) using copper oxide (CuO) and green-synthesized reduced graphene oxide (rGO) nanocomposite modified graphite electrode (GE). An easy, cost-effective ultrasonication method was adopted for the synthesis of the nanocomposite. The structural, morphological, elemental and optical characterization was done by X-ray diffraction (XRD), Raman, Field emission scanning electron microscopy (FESEM), Energy dispersive spectroscopy (EDS), Ultraviolet Visible spectroscopy (UV–Vis) and Fourier-transform infrared spectroscopy (FTIR). Electrochemical studies using the modified electrode for the detection of DA were performed using cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and differential pulse voltammetry (DPV) techniques. CV study reveals the enhanced redox mechanism towards DA due to the synergetic effect of the catalytic CuO and highly conductive rGO nanocomposite, which was further confirmed by greater electron transfer rate, studied from EIS. From the DPV plot, the limit of detection was calculated to be 1.84 μM with the wide linear range of 1–300 μM for DA. The selective detection of DA was carried out in the presence of AA. The modified electrode shows satisfactory results for reproducibility, repeatability and long-term stability. The detection of DA in human blood serum confirmed the recovery up to 104%, which shows its efficacy for real-world utilization.

利用氧化铜（CuO）和绿色合成的还原氧化石墨烯（rGO）纳米复合修饰石墨电极（GE），研制了一种用于在抗坏血酸（AA）存在下选择性检测多巴胺（DA）的非酶电化学传感器。采用一种简单、经济的超声法合成纳米复合材料。通过x射线衍射（XRD）、拉曼光谱（Raman）、场发射扫描电镜（FESEM）、能量色散光谱（EDS）、紫外可见光谱（UV-Vis）和傅里叶变换红外光谱（FTIR）对材料进行了结构、形态、元素和光学表征。采用循环伏安法（CV）、电化学阻抗谱（EIS）和差分脉冲伏安法（DPV）技术对改性电极检测DA进行了电化学研究。CV研究表明，催化CuO和高导电性氧化石墨烯纳米复合材料的协同作用增强了对DA的氧化还原机制，EIS研究中更高的电子传递速率进一步证实了这一点。从DPV图中计算出DA的检出限为1.84 μM，线性范围为1 ~ 300 μM。在AA存在的情况下，对DA进行选择性检测。该电极具有良好的重现性、重复性和长期稳定性。对人血清中DA的检测结果表明，该方法的回收率可达104%，具有实际应用价值。

{"title":"Selective, Non-Enzymatic Electrochemical Detection of Dopamine Using a Green-Synthesized CuO/rGO Nanocomposite-Modified Electrode","authors":"Rituparna Deo , Maya Devi","doi":"10.1016/j.diamond.2026.113407","DOIUrl":"10.1016/j.diamond.2026.113407","url":null,"abstract":"<div><div>A non-enzymatic electrochemical sensor was developed for selective detection of dopamine (DA) in the presence of ascorbic acid (AA) using copper oxide (CuO) and green-synthesized reduced graphene oxide (rGO) nanocomposite modified graphite electrode (GE). An easy, cost-effective ultrasonication method was adopted for the synthesis of the nanocomposite. The structural, morphological, elemental and optical characterization was done by X-ray diffraction (XRD), Raman, Field emission scanning electron microscopy (FESEM), Energy dispersive spectroscopy (EDS), Ultraviolet Visible spectroscopy (UV–Vis) and Fourier-transform infrared spectroscopy (FTIR). Electrochemical studies using the modified electrode for the detection of DA were performed using cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and differential pulse voltammetry (DPV) techniques. CV study reveals the enhanced redox mechanism towards DA due to the synergetic effect of the catalytic CuO and highly conductive rGO nanocomposite, which was further confirmed by greater electron transfer rate, studied from EIS. From the DPV plot, the limit of detection was calculated to be 1.84 μM with the wide linear range of 1–300 μM for DA. The selective detection of DA was carried out in the presence of AA. The modified electrode shows satisfactory results for reproducibility, repeatability and long-term stability. The detection of DA in human blood serum confirmed the recovery up to 104%, which shows its efficacy for real-world utilization.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113407"},"PeriodicalIF":5.1,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146184802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The influence of CVD-prepared carbon-graphite coating materials on the electrochemical and fast charging performance of graphite anodes cvd制备的碳-石墨涂层材料对石墨阳极电化学和快速充电性能的影响

IF 5.1 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials

Pub Date : 2026-02-03 DOI: 10.1016/j.diamond.2026.113405

Jiayi Ji , Zhiqing Wang

Currently, fast-charging lithium-ion batteries are widely used due to their advantages such as high efficiency and short charging time. However, the side reactions caused by high-rate charging can accelerate battery performance degradation, leading to a decrease in capacity and power, and posing a series of safety issues. This research starts with the regulation of graphite anodes, aiming to improve their fast-charging performance by coating the graphite surface with a carbon layer through chemical vapor deposition(CVD). A series of electrochemical tests show that the prepared carbon-coated graphite anode exhibits excellent electrochemical performance. Specifically, the material prepared at 1100 °C for 0.5 h demonstrates a maximum specific capacity of 362 mAh g⁻¹. The material prepared at 1100 °C for 1 h exhibits a maximum high-rate(5C) average specific capacity of 110.81 mAh g⁻¹, and the material prepared at 900 °C for 1 h demonstrates a maximum 5C rate cycle average specific capacity of 294.54 mAh g⁻¹. Among them, the material prepared at 1100 °C for 1 h demonstrates the best comprehensive electrochemical performance. These works represent a practical and efficient carbon coating method of carbon coating for graphite negative electrode modification in lithium-ion batteries, thereby enhancing their electrochemical and fast-charging performance.

目前，快速充电锂离子电池以其效率高、充电时间短等优点得到了广泛的应用。然而，高倍率充电引起的副反应会加速电池性能下降，导致容量和功率下降，并带来一系列安全问题。本研究从石墨阳极的调控入手，通过化学气相沉积（CVD）技术在石墨表面涂覆碳层，提高其快速充电性能。一系列电化学测试表明，所制备的碳包覆石墨阳极具有优异的电化学性能。具体来说，在1100°C下0.5 h制备的材料显示出362 mAh g−1的最大比容量。在1100°C下制备1 h的材料显示出110.81 mAh g−1的最大高倍率（5C）平均比容量，而在900°C下制备1 h的材料显示出294.54 mAh g−1的最大5C倍率循环平均比容量。其中，在1100℃下保温1h制备的材料综合电化学性能最好。这些工作为锂离子电池石墨负极改性碳涂层提供了一种实用高效的碳涂层方法，从而提高了锂离子电池的电化学性能和快速充电性能。

{"title":"The influence of CVD-prepared carbon-graphite coating materials on the electrochemical and fast charging performance of graphite anodes","authors":"Jiayi Ji , Zhiqing Wang","doi":"10.1016/j.diamond.2026.113405","DOIUrl":"10.1016/j.diamond.2026.113405","url":null,"abstract":"<div><div>Currently, fast-charging lithium-ion batteries are widely used due to their advantages such as high efficiency and short charging time. However, the side reactions caused by high-rate charging can accelerate battery performance degradation, leading to a decrease in capacity and power, and posing a series of safety issues. This research starts with the regulation of graphite anodes, aiming to improve their fast-charging performance by coating the graphite surface with a carbon layer through chemical vapor deposition(CVD). A series of electrochemical tests show that the prepared carbon-coated graphite anode exhibits excellent electrochemical performance. Specifically, the material prepared at 1100 °C for 0.5 h demonstrates a maximum specific capacity of 362 mAh g<sup>−1</sup>. The material prepared at 1100 °C for 1 h exhibits a maximum high-rate(5C) average specific capacity of 110.81 mAh g<sup>−1</sup>, and the material prepared at 900 °C for 1 h demonstrates a maximum 5C rate cycle average specific capacity of 294.54 mAh g<sup>−1</sup>. Among them, the material prepared at 1100 °C for 1 h demonstrates the best comprehensive electrochemical performance. These works represent a practical and efficient carbon coating method of carbon coating for graphite negative electrode modification in lithium-ion batteries, thereby enhancing their electrochemical and fast-charging performance.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113405"},"PeriodicalIF":5.1,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146185253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles analysis of biaxial-strain reducing ionization energy in a doped diamond 掺杂金刚石中双轴应变还原电离能的第一性原理分析

IF 5.1 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials

Pub Date : 2026-02-03 DOI: 10.1016/j.diamond.2026.113409

Shaohua Lu , Hanyang Wang , Yuhao Zheng , Xiaojun Hu

Diamond exhibits highly promising properties for next-generation high-efficiency, high-frequency, and high-power electronic devices, while its practical implementation is severely hindered by high ionization energies of dopants, resulting in low room-temperature carrier densities and excessive resistivity. Recent studies have suggested that uniaxial strain can modulate diamond's band structure, narrow the bandgap and potentially inducing an indirect-to-direct transition, while it is not useful to reduce the ionization energy in N-doped diamond. Here, we applied biaxial strain, which is more compatible with practical device fabrication, on X-doped diamond (X = B, P, O, and N) and systematically investigated the effects of biaxial strain on the ionization energy of X-doped diamond using first-principles calculations. The results reveal that biaxial tensile strain significantly reduces ionization energies for all studied dopants. Even under a 3% biaxial tension, ionization energies decrease to 0.12 eV for B (64% reduction), 0.35 eV for P (37%), 2.21 eV for O (20%), and 1.24 eV for N (28%). These findings underscore the strong potential of biaxial strain engineering as a viable strategy for enhanced doping efficiency and improving electrical activation in diamond semiconductors. This work provides crucial theoretical insights to support the design and development of advanced diamond-based electronic devices.

金刚石在下一代高效、高频、大功率电子器件中具有非常好的性能，但掺杂剂的高电离能严重阻碍了其实际应用，导致其室温载流子密度低和电阻率过高。最近的研究表明，单轴应变可以调节金刚石的能带结构，缩小带隙，并有可能引起间接到直接的跃迁，但对降低n掺杂金刚石的电离能没有帮助。本文将双轴应变应用于X掺杂金刚石（X = B， P， O， N）上，采用第一性原理计算方法系统地研究了双轴应变对X掺杂金刚石电离能的影响。结果表明，双轴拉伸应变显著降低了所有掺杂剂的电离能。即使在3%的双轴张力下，B的电离能也下降到0.12 eV（下降64%），P的电离能下降到0.35 eV（下降37%），O的电离能下降到2.21 eV（下降20%），N的电离能下降到1.24 eV（下降28%）。这些发现强调了双轴应变工程作为提高掺杂效率和改善金刚石半导体电活化的可行策略的强大潜力。这项工作为支持先进的钻石基电子器件的设计和开发提供了重要的理论见解。

{"title":"First-principles analysis of biaxial-strain reducing ionization energy in a doped diamond","authors":"Shaohua Lu , Hanyang Wang , Yuhao Zheng , Xiaojun Hu","doi":"10.1016/j.diamond.2026.113409","DOIUrl":"10.1016/j.diamond.2026.113409","url":null,"abstract":"<div><div>Diamond exhibits highly promising properties for next-generation high-efficiency, high-frequency, and high-power electronic devices, while its practical implementation is severely hindered by high ionization energies of dopants, resulting in low room-temperature carrier densities and excessive resistivity. Recent studies have suggested that uniaxial strain can modulate diamond's band structure, narrow the bandgap and potentially inducing an indirect-to-direct transition, while it is not useful to reduce the ionization energy in N-doped diamond. Here, we applied biaxial strain, which is more compatible with practical device fabrication, on X-doped diamond (X = B, P, O, and N) and systematically investigated the effects of biaxial strain on the ionization energy of X-doped diamond using first-principles calculations. The results reveal that biaxial tensile strain significantly reduces ionization energies for all studied dopants. Even under a 3% biaxial tension, ionization energies decrease to 0.12 eV for B (64% reduction), 0.35 eV for P (37%), 2.21 eV for O (20%), and 1.24 eV for N (28%). These findings underscore the strong potential of biaxial strain engineering as a viable strategy for enhanced doping efficiency and improving electrical activation in diamond semiconductors. This work provides crucial theoretical insights to support the design and development of advanced diamond-based electronic devices.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113409"},"PeriodicalIF":5.1,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146184737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Far-infrared broadband tunable absorber using water and graphene composite metamaterial 采用水和石墨烯复合超材料的远红外宽带可调谐吸收器

IF 5.1 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials

Pub Date : 2026-02-03 DOI: 10.1016/j.diamond.2026.113404

Shiqi Liu, Fang Chen, Wenxing Yang

The absorber proposed in this study builds upon a water-based absorber by introducing a patterned graphene framework and a patterned gold layer, thereby enhancing its relevant performance. Within the frequency range of 0 to 29 THz (THz), using a 90% absorption rate as the threshold, this absorber achieves an absolute bandwidth of 19.5 THz, a relative bandwidth of 113.44%, and an average absorption rate of 97.92%. It exhibits polarization insensitivity and demonstrates strong robustness against oblique incidence. Furthermore, the absorber maintains excellent performance across a temperature range of 0–60 °C and can be tuned through both electrical and thermal methods. This absorber holds significant promise for applications in thermal detectors, sensors, and terahertz imaging.

本研究提出的吸收剂是在水基吸收剂的基础上，通过引入图案化石墨烯框架和图案化金层，从而提高了其相关性能。在0 ~ 29太赫兹（THz）的频率范围内，以90%的吸收率为阈值，该吸收体的绝对带宽为19.5太赫兹，相对带宽为113.44%，平均吸收率为97.92%。它具有极化不敏感性，对斜入射具有很强的鲁棒性。此外，吸收剂在0-60°C的温度范围内保持优异的性能，并且可以通过电和热方法进行调节。这种吸收剂在热探测器、传感器和太赫兹成像中具有重要的应用前景。

引用次数: 0

A dynamically tunable graphene-VO₂ terahertz metamaterial absorber for multi-band frequency selection and broadband absorption 一种动态可调谐的石墨烯- vo 2太赫兹超材料多波段选择和宽带吸收吸收体

IF 5.1 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials

Pub Date : 2026-02-03 DOI: 10.1016/j.diamond.2026.113390

Xianhua Yin , Yaobin Wang , Jiakai Liu , Junrong Su , Tao Chen

To overcome limitations in conventional terahertz absorbers—such as limited channels, single-mode operation, and challenges in balancing high selectivity with broadband response, a dynamically tunable terahertz absorber based on a graphene-VO₂ hybrid metamaterial is proposed and numerically investigated. By combining the electrically tunable Fermi level of graphene with the insulator-metal phase transition of VO₂, reversible switching between eight narrowband frequency-selective absorption modes and an ultra-broadband absorption mode is achieved within a single structure. When VO₂ is in the metallic state and the graphene Fermi level is 0 eV, broadband absorption exceeding 90% is realized over 2.4–7.14 THz. In contrast, when VO₂ is in the insulating state and the graphene Fermi level is increased to 1 eV, eight well-defined narrowband resonances with high frequency selectivity are obtained. Impedance matching and electric field analyses reveal that the absorption performance arises from the excitation and coupling of multiple localized surface plasmon resonance modes. The proposed absorber offers a compact and effective strategy for multifunctional and reconfigurable terahertz devices.

为了克服传统太赫兹吸收器的局限性，如有限的通道、单模操作以及平衡高选择性和宽带响应的挑战，提出了一种基于石墨烯- vo 2混合超材料的动态可调谐太赫兹吸收器，并进行了数值研究。通过将石墨烯的电可调谐费米能级与VO₂的绝缘体-金属相变相结合，在单个结构内实现了八个窄带频率选择吸收模式和一个超宽带吸收模式之间的可逆切换。当VO₂处于金属态，石墨烯费米能级为0 eV时，在2.4 ~ 7.14 THz范围内实现了超过90%的宽带吸收。相比之下，当VO 2处于绝缘状态时，石墨烯的费米能级增加到1 eV，得到了8个具有高频率选择性的窄带共振。阻抗匹配和电场分析表明，吸收性能是由多个局域表面等离子体共振模式的激发和耦合产生的。所提出的吸收器为多功能和可重构太赫兹器件提供了一种紧凑有效的策略。

{"title":"A dynamically tunable graphene-VO₂ terahertz metamaterial absorber for multi-band frequency selection and broadband absorption","authors":"Xianhua Yin , Yaobin Wang , Jiakai Liu , Junrong Su , Tao Chen","doi":"10.1016/j.diamond.2026.113390","DOIUrl":"10.1016/j.diamond.2026.113390","url":null,"abstract":"<div><div>To overcome limitations in conventional terahertz absorbers—such as limited channels, single-mode operation, and challenges in balancing high selectivity with broadband response, a dynamically tunable terahertz absorber based on a graphene-VO₂ hybrid metamaterial is proposed and numerically investigated. By combining the electrically tunable Fermi level of graphene with the insulator-metal phase transition of VO₂, reversible switching between eight narrowband frequency-selective absorption modes and an ultra-broadband absorption mode is achieved within a single structure. When VO₂ is in the metallic state and the graphene Fermi level is 0 eV, broadband absorption exceeding 90% is realized over 2.4–7.14 THz. In contrast, when VO₂ is in the insulating state and the graphene Fermi level is increased to 1 eV, eight well-defined narrowband resonances with high frequency selectivity are obtained. Impedance matching and electric field analyses reveal that the absorption performance arises from the excitation and coupling of multiple localized surface plasmon resonance modes. The proposed absorber offers a compact and effective strategy for multifunctional and reconfigurable terahertz devices.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113390"},"PeriodicalIF":5.1,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146185639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxygen in diamond: Thermal stability of ST1 spin centres and creation of oxygen-pair complexes 金刚石中的氧：ST1自旋中心的热稳定性和氧对配合物的产生

IF 5.1 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials

Pub Date : 2026-02-02 DOI: 10.1016/j.diamond.2026.113395

Paul Neugebauer , Xinxi Huang , Chloe Newsom , Christophe Arnold , Hjørdis Martelock , Séverine Diziain , Edoardo Monnetti , Jocelyn Achard , Tobias Lühmann , Paolo Olivero , Jan Meijer , Julien Barjon , Alexandre Tallaire , Sébastien Pezzagna

Little is known about oxygen-related defects in diamond. Recently, the promising room-temperature spin centre named ST1 was identified as an oxygen centre, but of still unknown atomic structure and thermal stability. In this work, we report on the optically active oxygen-related centres and the conditions for their formation, using ion implantation of oxygen in various conditions of depth and fluence. More specifically, we establish the temperature formation/stability range of the ST1 centre, which has a maximum at about 1100 °C and is narrower than for NV centres. In these conditions, optically detected magnetic resonance (ODMR) on small ST1 ensembles was measured with a spin readout contrast of >20% at 300 K. In cathodoluminescence, the 535 nm ST1 peak is not observed. Besides, a broad peak centred at 460 nm is measured for implantation of O₂ molecular ions. For an annealing temperature of 1500 °C, a different centre is formed (with ZPL at 584.5 nm) with an intensity increasing with a power law 1.5 < p < 1.9 dependence from the implantation fluence. This suggests that this centre contains two oxygen atoms. Besides, a new spectral feature associated to an intrinsic defect was also observed, with four prominent lines (especially at 594 nm). Finally, the thermal formation and stability of oxygen centres in diamond presented here are important for the identification of the atomic structure of defects such as the ST1 and possible O₂V_x complex by means of ab initio calculations. Indeed, the formation energies and charge states of defect centres are easier to compute than the full energy level scheme, which to date still remains unsuccessful regarding the ST1 centre.

人们对金刚石中与氧有关的缺陷知之甚少。最近，一个很有前途的室温自旋中心ST1被确定为氧中心，但其原子结构和热稳定性仍然未知。在这项工作中，我们报告了光学活性氧相关中心及其形成的条件，使用氧离子注入在不同的深度和影响条件下。更具体地说，我们建立了ST1中心的温度形成/稳定范围，其最大值约为1100°C，比NV中心窄。在这些条件下，在300 K下测量了小型ST1器件的光学检测磁共振（ODMR），自旋读数对比度为>；20%。在阴极发光中，没有观察到535 nm的ST1峰。此外，在注入O2分子离子时，测量到以460 nm为中心的宽峰。当退火温度为1500℃时，形成了一个不同的中心（ZPL位于584.5 nm），其强度随注入量的增加呈1.5 < p <； 1.9的幂律增加。这表明这个中心含有两个氧原子。此外，还观察到与内在缺陷相关的新光谱特征，有四条突出的谱线（特别是在594 nm处）。最后，本文提出的金刚石中氧中心的热形成和稳定性对于通过从头计算识别ST1和可能的O2Vx配合物等缺陷的原子结构具有重要意义。事实上，缺陷中心的形成能和电荷态比全能级方案更容易计算，迄今为止，对于ST1中心，全能级方案仍然不成功。

{"title":"Oxygen in diamond: Thermal stability of ST1 spin centres and creation of oxygen-pair complexes","authors":"Paul Neugebauer , Xinxi Huang , Chloe Newsom , Christophe Arnold , Hjørdis Martelock , Séverine Diziain , Edoardo Monnetti , Jocelyn Achard , Tobias Lühmann , Paolo Olivero , Jan Meijer , Julien Barjon , Alexandre Tallaire , Sébastien Pezzagna","doi":"10.1016/j.diamond.2026.113395","DOIUrl":"10.1016/j.diamond.2026.113395","url":null,"abstract":"<div><div>Little is known about oxygen-related defects in diamond. Recently, the promising room-temperature spin centre named ST1 was identified as an oxygen centre, but of still unknown atomic structure and thermal stability. In this work, we report on the optically active oxygen-related centres and the conditions for their formation, using ion implantation of oxygen in various conditions of depth and fluence. More specifically, we establish the temperature formation/stability range of the ST1 centre, which has a maximum at about 1100 °C and is narrower than for NV centres. In these conditions, optically detected magnetic resonance (ODMR) on small ST1 ensembles was measured with a spin readout contrast of >20% at 300 K. In cathodoluminescence, the 535 nm ST1 peak is not observed. Besides, a broad peak centred at 460 nm is measured for implantation of O<sub>2</sub> molecular ions. For an annealing temperature of 1500 °C, a different centre is formed (with ZPL at 584.5 nm) with an intensity increasing with a power law 1.5 < <em>p</em> < 1.9 dependence from the implantation fluence. This suggests that this centre contains two oxygen atoms. Besides, a new spectral feature associated to an intrinsic defect was also observed, with four prominent lines (especially at 594 nm). Finally, the thermal formation and stability of oxygen centres in diamond presented here are important for the identification of the atomic structure of defects such as the ST1 and possible O<sub>2</sub>V<sub>x</sub> complex by means of ab initio calculations. Indeed, the formation energies and charge states of defect centres are easier to compute than the full energy level scheme, which to date still remains unsuccessful regarding the ST1 centre.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113395"},"PeriodicalIF":5.1,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146185245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance NiCr alloy metal bonded wheels for mechanochemical grinding of polycrystalline diamond wafers: Fabrication and application 聚晶金刚石机械化学磨削用高性能NiCr合金金属结合剂砂轮：制造与应用

IF 5.1 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials

Pub Date : 2026-02-02 DOI: 10.1016/j.diamond.2026.113401

Zesen Li , Jing Lu , Shaofeng Huang , Dongxu Li , Qiufa Luo , Congming Ke , Xipeng Xu

Polycrystalline diamond wafers are valuable for thermal management and battery cooling systems owing to their high thermal conductivity. However, their grinding is challenged by the anisotropic hardness and wear resistance of the constituent grains. This study introduces a mechanochemical grinding method using NiCr alloy metal-bonded wheels, which improves processing performance by suppressing abrasive oxidation. Compared with pure Fe abrasives, the NiCr alloy abrasives reduce the surface roughness of polycrystalline diamond by 18.986 nm and raise the material removal rate to 18.032 nm/min. First-principles calculations show that higher Ni content significantly accelerates the sp³-to-sp² phase transformation on the diamond surface, promoting the formation of an amorphous carbon layer. This result offers theoretical insight into the role of alloy composition in grinding performance.

由于其高导热性，多晶金刚石片在热管理和电池冷却系统中很有价值。然而，它们的磨削受到组成晶粒的各向异性硬度和耐磨性的挑战。本研究介绍了一种NiCr合金金属结合剂砂轮的机械化学磨削方法，通过抑制磨料氧化来提高加工性能。与纯铁磨料相比，NiCr合金磨料使聚晶金刚石表面粗糙度降低了18.986 nm，材料去除率提高到18.032 nm/min。第一性原理计算表明，较高的Ni含量显著加速了金刚石表面sp3- sp2相变，促进了非晶态碳层的形成。这一结果为合金成分在磨削性能中的作用提供了理论见解。

引用次数: 0

Impact of hydrogen implantation on a transferred diamond layer 氢注入对转移金刚石层的影响

IF 5.1 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials

Pub Date : 2026-02-02 DOI: 10.1016/j.diamond.2026.113392

J. Chrétien , N. Bernier , D. Das , L. Colonel , P. Gilles , H. Soares-Antunes , F. Milesi , N. Gauthier , M. Giacoia , S. Bongiorno , S. Tardif , D. Mariolle , F. Mazen , D. Landru , H. Henck , M. Pomorski , L. Le Van-Jodin

Hydrogen implantation combined with bonding enables the transfer of large scale, single crystal thin films. This process, known as Smart Cut™, is well-established for silicon in the fabrication of SOI stacks but remains challenging for diamond due to its rough and non-planar surface hindering bonding. To improve bonding energy, surface activation bonding was used which led to a successful transfer of diamond thin films onto silicon with nearly 90% surface yield. However, the post-fracture diamond film exhibited a pyramidal surface topology. This particular topology is characterized by Raman spectroscopy, Cathodoluminescence, Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, and Laue microdiffraction, and results from the formation of dihydrogen pressurized microcracks. The deformation of the crack walls causes the formation of vertical graphite sheets on the film's surface and induce plastic deformation in the underlying silicon substrate without compromising the diamond film's crystallinity or the bonding. Additionally, we propose a post-fracture surface cleaning method to obtain an epi-ready diamond film and to enable the reuse of the donor substrate.

氢注入结合键合可以实现大规模单晶薄膜的转移。这种被称为Smart Cut™的工艺在制造SOI硅堆方面已经得到了很好的应用，但由于金刚石的粗糙和非平面表面阻碍了键合，因此对于金刚石来说仍然是一个挑战。为了提高键合能，采用了表面活化键合，成功地将金刚石薄膜转移到硅上，表面收率接近90%。然而，断裂后的金刚石膜呈现锥体表面拓扑结构。这种特殊的拓扑结构通过拉曼光谱、阴极发光、扫描电子显微镜、透射电子显微镜、原子力显微镜和劳厄微衍射来表征，并且是由二氢加压微裂纹形成的。裂纹壁的变形导致薄膜表面垂直石墨片的形成，并在不影响金刚石薄膜结晶度或键合的情况下引起硅衬底的塑性变形。此外，我们提出了一种断裂后表面清洁方法，以获得外延就绪的金刚石膜，并使供体衬底能够重复使用。

{"title":"Impact of hydrogen implantation on a transferred diamond layer","authors":"J. Chrétien , N. Bernier , D. Das , L. Colonel , P. Gilles , H. Soares-Antunes , F. Milesi , N. Gauthier , M. Giacoia , S. Bongiorno , S. Tardif , D. Mariolle , F. Mazen , D. Landru , H. Henck , M. Pomorski , L. Le Van-Jodin","doi":"10.1016/j.diamond.2026.113392","DOIUrl":"10.1016/j.diamond.2026.113392","url":null,"abstract":"<div><div>Hydrogen implantation combined with bonding enables the transfer of large scale, single crystal thin films. This process, known as Smart Cut™, is well-established for silicon in the fabrication of SOI stacks but remains challenging for diamond due to its rough and non-planar surface hindering bonding. To improve bonding energy, surface activation bonding was used which led to a successful transfer of diamond thin films onto silicon with nearly 90% surface yield. However, the post-fracture diamond film exhibited a pyramidal surface topology. This particular topology is characterized by Raman spectroscopy, Cathodoluminescence, Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, and Laue microdiffraction, and results from the formation of dihydrogen pressurized microcracks. The deformation of the crack walls causes the formation of vertical graphite sheets on the film's surface and induce plastic deformation in the underlying silicon substrate without compromising the diamond film's crystallinity or the bonding. Additionally, we propose a post-fracture surface cleaning method to obtain an epi-ready diamond film and to enable the reuse of the donor substrate.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113392"},"PeriodicalIF":5.1,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146185372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

F-MWCNT incorporated PVP/TiO2 ternary nanocomposites for charge storage applications F-MWCNT将PVP/TiO2三元纳米复合材料用于电荷存储应用

IF 5.1 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials

Pub Date : 2026-02-02 DOI: 10.1016/j.diamond.2026.113400

Sachit K. Das , Debasrita Bharatiya , Rudra Narayan Subudhi , Ritu Saraswat , Sudhir Minz , Pijush De , Sarat K. Swain

The effect of functionalized MWCNT (f-MWCNT) on dielectric behaviour of PVP/TiO₂ and PVP/TiO₂/f-MWCNT ternary nanocomposites is studied in order to project the material for charge storage applications. The designed PVP/TiO₂ binary nanocomposite has a maximum dielectric constant value of 2.8 × 10² at frequency of 10² Hz. The highest dielectric permittivity of 2.22 × 10³ with minimal loss of 2.66 is observed for PVP/TiO₂/f-MWCNT nanocomposite at frequency of 10² Hz, respectively. The highest σ_ac conductivity values of 4.45 × 10⁻⁵ S/m and 4.83 × 10⁻³ S/m are obtained at 1 MHz for PVPT-5 and PVPTM-5 nanocomposites. The grain resistance of ternary nanocomposite is significantly reduced with the addition of f-MWCNT as compared to the binary nanocomposite. The improved surface area, high dielectric constant, minimal loss, and reduced grain resistance are the significant factors that make this designed PVP/TiO₂/f-MWCNT nanocomposite worth towards electronics and charge storage applications.

研究了功能化MWCNT （f-MWCNT）对PVP/TiO2和PVP/TiO2/f-MWCNT三元复合材料介电性能的影响，为该材料在电荷存储领域的应用奠定了基础。所设计的PVP/TiO2二元纳米复合材料在102 Hz频率下的最大介电常数值为2.8 × 102。在102 Hz频率下，PVP/TiO2/f-MWCNT纳米复合材料的介电常数最高为2.22 × 103，损耗最小为2.66。在1 MHz下，PVPT-5和PVPTM-5纳米复合材料的σac电导率最高，分别为4.45 × 10−5 S/m和4.83 × 10−3 S/m。与二元纳米复合材料相比，添加f-MWCNT显著降低了三元纳米复合材料的晶粒电阻。改进的表面积、高介电常数、最小的损耗和降低的晶粒电阻是使这种PVP/TiO2/f-MWCNT纳米复合材料具有电子和电荷存储应用价值的重要因素。

{"title":"F-MWCNT incorporated PVP/TiO2 ternary nanocomposites for charge storage applications","authors":"Sachit K. Das , Debasrita Bharatiya , Rudra Narayan Subudhi , Ritu Saraswat , Sudhir Minz , Pijush De , Sarat K. Swain","doi":"10.1016/j.diamond.2026.113400","DOIUrl":"10.1016/j.diamond.2026.113400","url":null,"abstract":"<div><div>The effect of functionalized MWCNT (f-MWCNT) on dielectric behaviour of PVP/TiO<sub>2</sub> and PVP/TiO<sub>2</sub>/f-MWCNT ternary nanocomposites is studied in order to project the material for charge storage applications. The designed PVP/TiO<sub>2</sub> binary nanocomposite has a maximum dielectric constant value of 2.8 × 10<sup>2</sup> at frequency of 10<sup>2</sup> Hz. The highest dielectric permittivity of 2.22 × 10<sup>3</sup> with minimal loss of 2.66 is observed for PVP/TiO<sub>2</sub>/f-MWCNT nanocomposite at frequency of 10<sup>2</sup> Hz, respectively. The highest σ<sub>ac</sub> conductivity values of 4.45 × 10<sup>−5</sup> S/m and 4.83 × 10<sup>−3</sup> S/m are obtained at 1 MHz for PVPT-5 and PVPTM-5 nanocomposites. The grain resistance of ternary nanocomposite is significantly reduced with the addition of f-MWCNT as compared to the binary nanocomposite. The improved surface area, high dielectric constant, minimal loss, and reduced grain resistance are the significant factors that make this designed PVP/TiO<sub>2</sub>/f-MWCNT nanocomposite worth towards electronics and charge storage applications.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"163 ","pages":"Article 113400"},"PeriodicalIF":5.1,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146184735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0