首页 > 最新文献

Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)最新文献

英文 中文
Quality of electronic design: from architectural level to test coverage 电子设计的质量:从架构层面到测试覆盖
O. P. Dias, J. Semião, Marcelino B. Santos, I. Teixeira, João Paulo Teixeira
The purpose of this paper is to present a design methodology that complements existing methodologies by addressing the upper and the lower extremes of the design flow. The aim of the methodology is to increase design and product quality. At system level, emphasis is given to architecture generation, reconfiguration and quality assessment. Quality metrics and criteria, focused on design and test issues, are used for the purpose. At physical level, a Defect-Oriented Test (DOT) approach and test reuse are the basis of the methodology to estimate test effectiveness, or defects coverage. Tools which implement the methodology are presented. Results are shown for a public domain PIC processor, used as a SOC embedded core.
本文的目的是提出一种设计方法,通过解决设计流程的上限和下限来补充现有的方法。该方法的目的是提高设计和产品质量。在系统层面,重点是体系结构生成、重构和质量评估。质量量度和标准,集中于设计和测试问题,被用于此目的。在物理层面上,面向缺陷的测试(DOT)方法和测试重用是评估测试有效性或缺陷覆盖率的方法的基础。介绍了实现该方法的工具。结果显示了一个公共领域的PIC处理器,用作SOC嵌入式核心。
{"title":"Quality of electronic design: from architectural level to test coverage","authors":"O. P. Dias, J. Semião, Marcelino B. Santos, I. Teixeira, João Paulo Teixeira","doi":"10.1109/ISQED.2000.838874","DOIUrl":"https://doi.org/10.1109/ISQED.2000.838874","url":null,"abstract":"The purpose of this paper is to present a design methodology that complements existing methodologies by addressing the upper and the lower extremes of the design flow. The aim of the methodology is to increase design and product quality. At system level, emphasis is given to architecture generation, reconfiguration and quality assessment. Quality metrics and criteria, focused on design and test issues, are used for the purpose. At physical level, a Defect-Oriented Test (DOT) approach and test reuse are the basis of the methodology to estimate test effectiveness, or defects coverage. Tools which implement the methodology are presented. Results are shown for a public domain PIC processor, used as a SOC embedded core.","PeriodicalId":113766,"journal":{"name":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","volume":"22 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126079830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
DVDT: design for voltage drop test using on-chip voltage scan path DVDT:使用片上电压扫描路径设计电压降测试
M. Ikeda, H. Aoki, K. Asada
This paper proposes a new design method for voltage drop testing using on-chip voltage scan path. Using on-chip voltage monitors with a scan path data transfer architecture, this on-chip voltage scan path can measure voltage-drop on a real chip in real time with a limited number of I/O pins. Preliminary results are presented based on measurement results using a test chip, which demonstrates that this technique can effectively monitor voltage bounce in power supply lines. Quality of power supply lines can be effectively enhanced when this technique is applied to a real chip.
提出了一种利用片上电压扫描路径进行电压降测试的新设计方法。使用带有扫描路径数据传输架构的片上电压监视器,这种片上电压扫描路径可以在有限数量的I/O引脚下实时测量真实芯片上的电压降。基于测试芯片的测量结果,给出了初步结果,表明该技术可以有效地监测供电线路中的电压反弹。将该技术应用于实际芯片中,可以有效地提高供电线路的质量。
{"title":"DVDT: design for voltage drop test using on-chip voltage scan path","authors":"M. Ikeda, H. Aoki, K. Asada","doi":"10.1109/ISQED.2000.838887","DOIUrl":"https://doi.org/10.1109/ISQED.2000.838887","url":null,"abstract":"This paper proposes a new design method for voltage drop testing using on-chip voltage scan path. Using on-chip voltage monitors with a scan path data transfer architecture, this on-chip voltage scan path can measure voltage-drop on a real chip in real time with a limited number of I/O pins. Preliminary results are presented based on measurement results using a test chip, which demonstrates that this technique can effectively monitor voltage bounce in power supply lines. Quality of power supply lines can be effectively enhanced when this technique is applied to a real chip.","PeriodicalId":113766,"journal":{"name":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116047624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Peak power reduction in low power BIST 低功率BIST的峰值功率降低
Xiaodong Zhang, K. Roy
In order to meet the power and reliability constraints, it is important to reduce both average and peak power during BIST operations. In this paper we propose a Low Power Automatic Test Pattern Generator (LPATPG) with peak power. reduction. The technique can be used during on-line testing of large circuits requiring low power consumption. The LPATPG can be implemented using linear cellular automata (CA) with appropriate external weighting logic. While the average power is reduced by finding the optimal signal activities (probabilities of signal switching) at the primary inputs, the peak power is reduced by restricting the number of active primary inputs. Results on ISCAS benchmark circuits show that while achieving high fault coverage, average power reduction up to 90%, peak power reduction up to 37% and energy reduction up to 93% can be achieved (compared to equi-probable random pattern generator by linear cellular automata), and the ratio of the number of high power vectors (vectors violating the power limit) in the LPATPG sequence to the number of high power vectors in the equi-probable random sequence can be as low as 0.44%.
为了满足功率和可靠性的限制,降低BIST运行过程中的平均功率和峰值功率是很重要的。本文提出了一种具有峰值功率的低功率自动测试图发生器(LPATPG)。减少。该技术可用于低功耗大型电路的在线测试。LPATPG可以使用具有适当外部加权逻辑的线性元胞自动机(CA)来实现。虽然通过在主输入处找到最佳信号活动(信号切换的概率)来降低平均功率,但通过限制有效主输入的数量来降低峰值功率。在ISCAS基准电路上的实验结果表明,在实现高故障覆盖率的同时,LPATPG序列的平均功耗降低高达90%,峰值功耗降低高达37%,能量降低高达93%(与线性元胞自动机的等概率随机模式发生器相比),LPATPG序列中的高功率向量(超过功率限制的向量)与等概率随机序列中的高功率向量的比例可低至0.44%。
{"title":"Peak power reduction in low power BIST","authors":"Xiaodong Zhang, K. Roy","doi":"10.1109/ISQED.2000.838911","DOIUrl":"https://doi.org/10.1109/ISQED.2000.838911","url":null,"abstract":"In order to meet the power and reliability constraints, it is important to reduce both average and peak power during BIST operations. In this paper we propose a Low Power Automatic Test Pattern Generator (LPATPG) with peak power. reduction. The technique can be used during on-line testing of large circuits requiring low power consumption. The LPATPG can be implemented using linear cellular automata (CA) with appropriate external weighting logic. While the average power is reduced by finding the optimal signal activities (probabilities of signal switching) at the primary inputs, the peak power is reduced by restricting the number of active primary inputs. Results on ISCAS benchmark circuits show that while achieving high fault coverage, average power reduction up to 90%, peak power reduction up to 37% and energy reduction up to 93% can be achieved (compared to equi-probable random pattern generator by linear cellular automata), and the ratio of the number of high power vectors (vectors violating the power limit) in the LPATPG sequence to the number of high power vectors in the equi-probable random sequence can be as low as 0.44%.","PeriodicalId":113766,"journal":{"name":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116148677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
An efficient rule-based OPC approach using a DRC tool for 0.18 /spl mu/m ASIC 一种高效的基于规则的OPC方法,使用DRC工具用于0.18 /spl mu/m ASIC
Ji-Soong Park, Chul-Hong Park, Sang-Uhk Rhie, Yoo-Hyon Kim, Moon-Hyun Yoo, J. Kong, Hyung-Woo Kim, Sunjoo Yoo
The increasing complexity and data volume of VLSI designs demand an efficient optical proximity correction (OPC) technique. In this paper, we address the issues related to the gate bridge, which is serious in sub-quarter micron technology, and the wide range of contact CD (Critical Dimension) variation. We present the efficient gate CD control method by introducing the critical area correction. In addition, the contact CD variation is reduced under the target CD range due to the combination of the contact biasing and the process calibration. The correction time and output data volume are drastically reduced by the hierarchical data manipulation using a DRC (Design Rule Check) tool, which basically exploits the characteristics of the design layers in ASICs. The newly proposed incremental on-line violation filtering method also reduces the correction cycle time significantly.
随着超大规模集成电路设计的复杂性和数据量的增加,需要一种高效的光学接近校正技术。在本文中,我们解决了与栅极桥相关的问题,这在亚四分之一微米技术中是严重的,并且接触CD(临界尺寸)变化范围很大。通过引入临界面积校正,提出了一种有效的栅极CD控制方法。此外,由于接触偏置和过程校准的结合,在目标CD范围内减小了接触CD的变化。通过使用DRC(设计规则检查)工具进行分层数据操作,大大减少了校正时间和输出数据量,DRC基本上利用了asic中设计层的特征。新提出的增量式在线违例过滤方法也显著缩短了校正周期。
{"title":"An efficient rule-based OPC approach using a DRC tool for 0.18 /spl mu/m ASIC","authors":"Ji-Soong Park, Chul-Hong Park, Sang-Uhk Rhie, Yoo-Hyon Kim, Moon-Hyun Yoo, J. Kong, Hyung-Woo Kim, Sunjoo Yoo","doi":"10.1109/ISQED.2000.838858","DOIUrl":"https://doi.org/10.1109/ISQED.2000.838858","url":null,"abstract":"The increasing complexity and data volume of VLSI designs demand an efficient optical proximity correction (OPC) technique. In this paper, we address the issues related to the gate bridge, which is serious in sub-quarter micron technology, and the wide range of contact CD (Critical Dimension) variation. We present the efficient gate CD control method by introducing the critical area correction. In addition, the contact CD variation is reduced under the target CD range due to the combination of the contact biasing and the process calibration. The correction time and output data volume are drastically reduced by the hierarchical data manipulation using a DRC (Design Rule Check) tool, which basically exploits the characteristics of the design layers in ASICs. The newly proposed incremental on-line violation filtering method also reduces the correction cycle time significantly.","PeriodicalId":113766,"journal":{"name":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115293301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
EMI common-mode current dependence on delay skew imbalance in high speed differential transmission lines operating at 1 gigabit/second data rates 在1千兆位/秒数据速率的高速差分传输线中,EMI共模电流依赖于延迟倾斜不平衡
J. Knighten, N. Smith, L. Hoeft, J. T. DiBene
EMI-related common-mode currents in a high speed differential transmission line circuits can be generated by delay imbalance (skew) at a rate almost directly proportional to the amount of skew imbalance. Delay skew was shown to generate common-mode currents at a rate of four times that of slew rate skew. Radiated EMI levels were shown to follow increasing common-mode currents. Attention to delay skew imbalance should be an important design consideration at the chip level, the transmission line level and at the load in order to produce high speed differential circuits with low emission characteristics. While models using identified waveforms predict common-mode waveform harmonics that include only odd harmonics, measurements with real devices indicate the presence of all harmonics due to waveform asymmetries, such as dirty cycle distortion and rise/fall time asymmetries.
在高速差分传输线电路中,emi相关的共模电流可以由延迟不平衡(斜)产生,其速率几乎与斜不平衡的量成正比。延时偏斜产生共模电流的速率是摆率偏斜的四倍。辐射电磁干扰水平显示随增加的共模电流。为了生产具有低发射特性的高速差动电路,在芯片级、传输线级和负载级都应注意延迟倾斜不平衡。虽然使用已识别波形的模型预测的共模波形谐波仅包括奇次谐波,但使用实际设备的测量表明,由于波形不对称(如脏周期失真和上升/下降时间不对称),所有谐波都存在。
{"title":"EMI common-mode current dependence on delay skew imbalance in high speed differential transmission lines operating at 1 gigabit/second data rates","authors":"J. Knighten, N. Smith, L. Hoeft, J. T. DiBene","doi":"10.1109/ISQED.2000.838888","DOIUrl":"https://doi.org/10.1109/ISQED.2000.838888","url":null,"abstract":"EMI-related common-mode currents in a high speed differential transmission line circuits can be generated by delay imbalance (skew) at a rate almost directly proportional to the amount of skew imbalance. Delay skew was shown to generate common-mode currents at a rate of four times that of slew rate skew. Radiated EMI levels were shown to follow increasing common-mode currents. Attention to delay skew imbalance should be an important design consideration at the chip level, the transmission line level and at the load in order to produce high speed differential circuits with low emission characteristics. While models using identified waveforms predict common-mode waveform harmonics that include only odd harmonics, measurements with real devices indicate the presence of all harmonics due to waveform asymmetries, such as dirty cycle distortion and rise/fall time asymmetries.","PeriodicalId":113766,"journal":{"name":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125093952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Design for testability in nanometer technologies; searching for quality 纳米技术可测试性设计;寻找质量
T. Williams, R. Kapur
Today's technology allows for the creation of designs that are stressing methodologies from a time to market point of view. The industry is in a transition period where the methodologies and tools are changing to allow for reusing designs as cores. With a promise of large capacity, the miniaturization of the devices brings along new problems and changes the focus of Design for Testability (DFT) and for all the tools used in the successful manufacturing of the design. In this paper, the impact of nanometer technology on the issues associated with testing of system-on-chip (SOC) designs is discussed.
今天的技术允许从时间到市场的角度来强调方法论的设计。该行业正处于一个过渡时期,方法和工具正在发生变化,以允许将设计作为核心进行重用。随着大容量的发展,器件的小型化带来了新的问题,并改变了可测试性设计(DFT)和成功制造设计所使用的所有工具的重点。本文讨论了纳米技术对片上系统(SOC)设计测试相关问题的影响。
{"title":"Design for testability in nanometer technologies; searching for quality","authors":"T. Williams, R. Kapur","doi":"10.1109/ISQED.2000.838870","DOIUrl":"https://doi.org/10.1109/ISQED.2000.838870","url":null,"abstract":"Today's technology allows for the creation of designs that are stressing methodologies from a time to market point of view. The industry is in a transition period where the methodologies and tools are changing to allow for reusing designs as cores. With a promise of large capacity, the miniaturization of the devices brings along new problems and changes the focus of Design for Testability (DFT) and for all the tools used in the successful manufacturing of the design. In this paper, the impact of nanometer technology on the issues associated with testing of system-on-chip (SOC) designs is discussed.","PeriodicalId":113766,"journal":{"name":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123288627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Full chip thermal simulation 全芯片热模拟
Zhiping Yu, D. Yergeau, R. Dutton, O. S. Nakagawa, N. Chang, Shen Lin, Weize Xie
A multilayer, full chip thermal analysis is presented. The design of the chip at functional-block level is directly captured by the simulator, allowing the assessment of the chip layout impact on the system performance due to the elevated operational temperature. The heat generation for each block is obtained by running the circuit-level electrical simulation separately on individual functional units. The thermal diffusion equation is then solved based on the actual structure of the chip including substrate and interconnect/insulating layers. Different thermal conductivity can be specified for each material layer. The effect of package on chip temperature distribution is modeled using thermally resistive layers as the boundary between the simulated structure and surrounding environment. Proper adjustment of the boundary thermal resistance results in the correct range of simulated temperature distribution as compared to the measured data. Both physics and implementation for the thermal simulation are described. The code is applied to the analysis of a realistic design of a CPU chip made of SOI technology with up to six metal interconnect layers. A comprehensive review of the simulation results is presented.
提出了一种多层全芯片热分析方法。芯片在功能模块级的设计由模拟器直接捕获,允许评估芯片布局对系统性能的影响,因为工作温度升高。通过在单个功能单元上分别运行电路级电气仿真,可以获得每个块的发热量。然后根据芯片的实际结构(包括衬底和互连层/绝缘层)求解热扩散方程。每个材料层可指定不同的导热系数。采用热阻层作为模拟结构与周围环境的边界,模拟了封装对芯片温度分布的影响。对边界热阻进行适当的调整,可以使模拟温度分布的范围与实测数据相一致。描述了热模拟的物理和实现。该代码应用于分析一个由SOI技术制成的具有多达六层金属互连层的CPU芯片的实际设计。对模拟结果进行了全面的回顾。
{"title":"Full chip thermal simulation","authors":"Zhiping Yu, D. Yergeau, R. Dutton, O. S. Nakagawa, N. Chang, Shen Lin, Weize Xie","doi":"10.1109/ISQED.2000.838867","DOIUrl":"https://doi.org/10.1109/ISQED.2000.838867","url":null,"abstract":"A multilayer, full chip thermal analysis is presented. The design of the chip at functional-block level is directly captured by the simulator, allowing the assessment of the chip layout impact on the system performance due to the elevated operational temperature. The heat generation for each block is obtained by running the circuit-level electrical simulation separately on individual functional units. The thermal diffusion equation is then solved based on the actual structure of the chip including substrate and interconnect/insulating layers. Different thermal conductivity can be specified for each material layer. The effect of package on chip temperature distribution is modeled using thermally resistive layers as the boundary between the simulated structure and surrounding environment. Proper adjustment of the boundary thermal resistance results in the correct range of simulated temperature distribution as compared to the measured data. Both physics and implementation for the thermal simulation are described. The code is applied to the analysis of a realistic design of a CPU chip made of SOI technology with up to six metal interconnect layers. A comprehensive review of the simulation results is presented.","PeriodicalId":113766,"journal":{"name":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130046092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Applying the OpenMORE assessment program for IP cores 应用OpenMORE IP核评估程序
Jean-Pierre Gukguen, P. Bricaud
Synopsys and Mentor Graphics have announced a new extended OpenMORE hard IP section version 1.0, including added measurability criteria for design and verification of hard cores, and incorporating key hard deliverables specifications from the VSIA industry group. OpenMORE provides the industry's premier methodology to simply and quickly evaluate the reusability of soft and hard IP cores for SoC design. OpenMORE structures the assessment of the reuse quality of IP cores. IP developers enter assessment data into the worksheet following approximately 150 rules and guidelines for soft cores and about 100 rules and guidelines for hard cores. Rules are assigned 5 points and guidelines are assigned 1 point. There are three categories used for the grading process; Macro Design Guidelines, Verification Guidelines, and Deliverable Guidelines.
Synopsys和Mentor Graphics宣布了一个新的扩展OpenMORE硬IP部分1.0版本,其中包括为设计和验证硬核增加了可测量性标准,并纳入了VSIA行业组织的关键硬交付规范。OpenMORE提供了业界首屈一指的方法,可以简单快速地评估SoC设计的软、硬IP核的可重用性。OpenMORE架构了IP核复用质量的评估。IP开发者按照大约150条软核规则和指南以及大约100条硬核规则和指南将评估数据输入到工作表中。规则加5分,指导加1分。有三个类别用于分级过程;宏观设计指南、验证指南和可交付指南。
{"title":"Applying the OpenMORE assessment program for IP cores","authors":"Jean-Pierre Gukguen, P. Bricaud","doi":"10.1109/ISQED.2000.838900","DOIUrl":"https://doi.org/10.1109/ISQED.2000.838900","url":null,"abstract":"Synopsys and Mentor Graphics have announced a new extended OpenMORE hard IP section version 1.0, including added measurability criteria for design and verification of hard cores, and incorporating key hard deliverables specifications from the VSIA industry group. OpenMORE provides the industry's premier methodology to simply and quickly evaluate the reusability of soft and hard IP cores for SoC design. OpenMORE structures the assessment of the reuse quality of IP cores. IP developers enter assessment data into the worksheet following approximately 150 rules and guidelines for soft cores and about 100 rules and guidelines for hard cores. Rules are assigned 5 points and guidelines are assigned 1 point. There are three categories used for the grading process; Macro Design Guidelines, Verification Guidelines, and Deliverable Guidelines.","PeriodicalId":113766,"journal":{"name":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131555301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Aliasing-free space and time compactions with limited overhead 无混叠的空间和时间压缩,开销有限
Jin Ding, D. Moloney, Xiaojun Wang
Space- and time-oriented compactions are to reduce the output response data width and length of circuits under test for built-in self-test technique. In this paper, the space- and time-oriented compaction techniques are considered together. First, the space-oriented data compaction technique is analyzed. We present a scheme, which can compress the data of k-output circuit into 1-bit signature stream with zero-aliasing and zero-performance-degradation for single stuck-line faults. Based on the investigation of the space's odd-sensitized and space's even-sensitized faults of the circuits under test, we discuss the compact methods of space's odd sensitization and space's even sensitization test responses, respectively. The graph coloring is adopted to decrease space compactor overhead. The coloring complexity is greatly decreased owing to only painting the output notes with respect to the space's even-sensitized faults. Next, we take into account the time-oriented data compaction scheme. We use the property that a test vector detects multiple faults in the time's even sensitization response compaction. In the time-oriented compaction approach developed in this paper, an s-bit long data stream can be compressed to an r-bit signature with zero-aliasing, where s/spl Gt/r. Experimental results are presented to demonstrate the effectiveness of the proposed space- and time-oriented compaction techniques.
面向空间和时间的压缩是为了减少被测电路的输出响应数据宽度和长度,以实现内置自测技术。本文同时考虑了面向空间和面向时间的压缩技术。首先,分析了面向空间的数据压缩技术。提出了一种将k输出电路的数据压缩成1位签名流的方案,该方案对单卡线故障具有零混叠和零性能退化。在研究被测电路空间奇敏化和空间偶敏化故障的基础上,分别讨论了空间奇敏化和空间偶敏化测试响应的压缩方法。采用图形着色来减少空间压缩器开销。由于只绘制相对于空间均匀敏感故障的输出注释,因此着色复杂性大大降低。接下来,我们考虑面向时间的数据压缩方案。我们利用测试向量在时间均匀敏化响应压缩中检测多个故障的特性。在本文开发的面向时间的压缩方法中,可以将s位长的数据流压缩为具有零混叠的r位签名,其中s/spl Gt/r。实验结果证明了所提出的面向空间和时间的压实技术的有效性。
{"title":"Aliasing-free space and time compactions with limited overhead","authors":"Jin Ding, D. Moloney, Xiaojun Wang","doi":"10.1109/ISQED.2000.838896","DOIUrl":"https://doi.org/10.1109/ISQED.2000.838896","url":null,"abstract":"Space- and time-oriented compactions are to reduce the output response data width and length of circuits under test for built-in self-test technique. In this paper, the space- and time-oriented compaction techniques are considered together. First, the space-oriented data compaction technique is analyzed. We present a scheme, which can compress the data of k-output circuit into 1-bit signature stream with zero-aliasing and zero-performance-degradation for single stuck-line faults. Based on the investigation of the space's odd-sensitized and space's even-sensitized faults of the circuits under test, we discuss the compact methods of space's odd sensitization and space's even sensitization test responses, respectively. The graph coloring is adopted to decrease space compactor overhead. The coloring complexity is greatly decreased owing to only painting the output notes with respect to the space's even-sensitized faults. Next, we take into account the time-oriented data compaction scheme. We use the property that a test vector detects multiple faults in the time's even sensitization response compaction. In the time-oriented compaction approach developed in this paper, an s-bit long data stream can be compressed to an r-bit signature with zero-aliasing, where s/spl Gt/r. Experimental results are presented to demonstrate the effectiveness of the proposed space- and time-oriented compaction techniques.","PeriodicalId":113766,"journal":{"name":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132641518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Probabilistic bottom-up RTL power estimation 概率自底向上RTL功率估计
R. Ferreira, Anne-Marie Trullemans-Anckaert, José C. Costa, J. Monteiro
We address the problem of power estimation at the register-transfer level (RTL). At this level, the circuit is described in terms of a set of interconnected memory elements and combinational modules of different degrees of complexity. We propose a bottom-up approach to create a simplified high-level model of the block behavior for power estimation, which is described by a symbolic local polynomial. We use an efficient gate-level modeling based on the polynomial simulation method and ZBDDs. We present a set of experimental results that show a large improvement in performance and robustness when compared to previous approaches.
我们解决了在寄存器-传输级(RTL)的功率估计问题。在这个层次上,电路被描述为一组相互连接的存储元件和不同复杂程度的组合模块。我们提出了一种自底向上的方法来创建一个简化的用于功率估计的块行为高级模型,该模型由符号局部多项式描述。我们使用基于多项式仿真方法和zbdd的高效门级建模。我们提出了一组实验结果,表明与以前的方法相比,性能和鲁棒性有了很大的提高。
{"title":"Probabilistic bottom-up RTL power estimation","authors":"R. Ferreira, Anne-Marie Trullemans-Anckaert, José C. Costa, J. Monteiro","doi":"10.1109/ISQED.2000.838916","DOIUrl":"https://doi.org/10.1109/ISQED.2000.838916","url":null,"abstract":"We address the problem of power estimation at the register-transfer level (RTL). At this level, the circuit is described in terms of a set of interconnected memory elements and combinational modules of different degrees of complexity. We propose a bottom-up approach to create a simplified high-level model of the block behavior for power estimation, which is described by a symbolic local polynomial. We use an efficient gate-level modeling based on the polynomial simulation method and ZBDDs. We present a set of experimental results that show a large improvement in performance and robustness when compared to previous approaches.","PeriodicalId":113766,"journal":{"name":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128606352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
期刊
Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1