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Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)最新文献

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Overview of SiGe technology modeling and application SiGe技术建模与应用概述
J. Yuan
Advances in wireless communications and information processing systems require implementation of very high performance electronic systems. In recent years, SiGe heterojunction bipolar transistors (HBTs) have emerged as one of the leading contenders to satisfy these demands. The low emitter-base turn-on voltage and device scaling significantly reduce power consumption in circuit operation, while maintaining high speed. With the increasing demand placed on voice and data communications, transmitting, receiving and processing information at high frequencies and high speeds, the use of SiGe bipolar transistors becomes increasingly important.
无线通信和信息处理系统的发展要求实现高性能的电子系统。近年来,SiGe异质结双极晶体管(hbt)已成为满足这些需求的主要竞争者之一。低发射极基导通电压和器件缩放显着降低了电路运行中的功耗,同时保持了高速。随着对语音和数据通信的需求不断增加,在高频和高速下传输、接收和处理信息,SiGe双极晶体管的使用变得越来越重要。
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引用次数: 1
Early addressing IC and package relationship allows an overall better quality of complex SOC 早期的寻址IC和封装关系允许复杂SOC的整体质量更好
A. Fontanelli, L. Arnone, R. Branca, Giorgio Mastrorocco
Trends in silicon process and packaging technologies require a tighter integration among manufacturing steps historically well distinct. It is becoming increasingly difficult to design and manufacture the most complex systems-on-a-chip (SOC) without a unified approach which allows taking into account the relationship between the package and the integrated circuits (IC) design flows. We present a new methodology, able to convey board- and package-related information into the classical IC design flow and vice versa. This is the key to ensure the physical implementation is correct the first time, meeting high-density and high-speed design challenges. ICPack (IC & Package Design Integration) is a flexible and adaptable EDA environment, Java- and Web-based, which aims at reducing the number of iterations required to meet the design objectives in terms of quality, reliability, productivity and time to qualification.
硅工艺和封装技术的趋势要求在历史上截然不同的制造步骤之间进行更紧密的集成。考虑到封装和集成电路(IC)设计流程之间的关系,如果没有统一的方法,设计和制造最复杂的片上系统(SOC)变得越来越困难。我们提出了一种新的方法,能够将电路板和封装相关的信息传递到经典IC设计流程中,反之亦然。这是确保第一次物理实现正确,满足高密度和高速设计挑战的关键。ICPack(集成电路和封装设计集成)是一个灵活的、适应性强的EDA环境,基于Java和基于web,旨在减少在质量、可靠性、生产力和时间方面满足设计目标所需的迭代次数。
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引用次数: 7
LEMINGS: LSI's EMI-noise analysis with gate level simulator 利用栅极电平模拟器分析LSI的emi噪声
K. Shimazaki, H. Tsujikawa, Seijiro Kojima, Shouzou Hirano
EMI (electromagnetic interference) noise has become a more significant problem in high-speed electronic systems. To analyze EMI problems, LSIs should be analysed carefully as the source of EMI noise. However, as the circuit size of the LSIs becomes larger, it becomes more difficult to analyze the noise of these circuits by using a transistor-level simulator. Thus designers need a simulator that covers full-chip size for noise analysis. In this paper, we propose a new EMI noise simulation methodology that uses a gate-level representation for the first time. The noise from the logic gates is simply modeled by a FFT process based on the superimposed triangular current waveform. Because of the compactness of the model, we can reduce the computation dramatically and accomplish a large simulation. Furthermore, we developed a prototype simulator 'LEMINGS' to demonstrate the proposed method for conventional ASIC design flows. The experimental results show that our new EMI analysis method has achieved an outstanding performance, a high capacity to simulate the whole design and a high accuracy that is equivalent to the transistor-level simulator. Information obtained from LEMINGS can also help designers to improve the LSI and electronic systems' design quality.
电磁干扰(EMI)噪声已成为高速电子系统中较为突出的问题。为了分析电磁干扰问题,应该仔细分析作为电磁干扰噪声源的lsi。然而,随着lsi的电路尺寸越来越大,使用晶体管级模拟器分析这些电路的噪声变得越来越困难。因此,设计人员需要一个覆盖全芯片尺寸的模拟器来进行噪声分析。在本文中,我们首次提出了一种新的电磁干扰噪声模拟方法,该方法使用门级表示。通过基于叠加三角形电流波形的FFT处理,简单地模拟了逻辑门的噪声。由于模型的紧凑性,可以大大减少计算量,实现大规模的仿真。此外,我们开发了一个原型模拟器“LEMINGS”来演示传统ASIC设计流程的建议方法。实验结果表明,新的电磁干扰分析方法具有优异的性能,具有较高的模拟整个设计的能力和与晶体管级模拟器相当的精度。从LEMINGS获得的信息也可以帮助设计者提高大规模集成电路和电子系统的设计质量。
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引用次数: 18
A reliable clock tree design methodology for ASIC designs 一种用于ASIC设计的可靠时钟树设计方法
Mely Chen Chi, Shih-Hsu Huang
In the deep submicron era, an ASIC chip may contain millions of gates and have the requirements of low power and high performance. The ability to construct multiple clock trees effectively is very important. A clock tree design methodology is presented. Firstly, we conducted many clock tree synthesis experiments, which explored various configurations of clock tree structure and layouts. A guide for clock tree synthesis is then generated. By applying this guidance, the clock tree design procedure in ASIC design is simplified and the design time is shortened. The clock skews are within the expected range. This methodology has been used to implement clock trees on the chips designed in the Computer and Communications Research Laboratories. Our experience shows that for single clock trees the intra-clock skew is confined within 0.1 ns in one design pass for 0.35 /spl mu/m CMOS technology chips. For multiple clock trees, which are originated from the same clock source, the inter-clock skew may also be controlled easily. This design methodology is proven to be a reliable method to implement clock trees on ASIC chips.
在深亚微米时代,一个ASIC芯片可能包含数百万个栅极,并且具有低功耗和高性能的要求。有效地构造多个时钟树的能力非常重要。提出了一种时钟树设计方法。首先,我们进行了多次时钟树合成实验,探索了时钟树结构和布局的各种配置。然后生成时钟树合成指南。应用该指导思想,简化了ASIC设计中的时钟树设计程序,缩短了设计时间。时钟偏差在预期范围内。该方法已用于在计算机和通信研究实验室设计的芯片上实现时钟树。我们的经验表明,对于单个时钟树,对于0.35 /spl mu/m CMOS技术芯片,在一次设计通过中,时钟内偏差被限制在0.1 ns以内。对于来自同一时钟源的多个时钟树,时钟间的偏差也可以很容易地控制。这种设计方法被证明是一种在ASIC芯片上实现时钟树的可靠方法。
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引用次数: 7
Power bus maximum voltage drop in digital VLSI circuits 数字VLSI电路中的电源总线最大电压降
G. Bai, S. Bobba, I. Hajj
This paper presents a new input-independent method for finding the maximum voltage drop of the power bus in digital VLSI circuits. The method relies on expressing the voltage at the power bus nodes in terms of gate currents using sensitivity analysis. Circuit timing information and circuit functionality are used to find maximum simultaneous switching and upper bounds on maximum voltage drop at a given node over a clock cycle. The effects of primary inputs misalignment and statistical variation in the circuit delays on maximum voltage drop are automatically included in our method. HSPICE exhaustive simulation results on 3 by 3 and 4 by 4 multipliers are used to validate our work.
本文提出了一种与输入无关的求数字VLSI电路中电源总线最大电压降的新方法。该方法依赖于利用灵敏度分析将电源母线节点上的电压表示为栅极电流。电路时序信息和电路功能用于在一个时钟周期内找到给定节点上最大同时开关和最大电压降的上界。在我们的方法中自动包含了主输入不对准和电路延迟统计变化对最大电压降的影响。用HSPICE对3 × 3和4 × 4乘法器的穷举仿真结果验证了我们的工作。
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引用次数: 6
期刊
Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)
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