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A 0.5 GHz BiCMOS operational amplifier 一种0.5 GHz BiCMOS运算放大器
Pub Date : 1900-01-01 DOI: 10.1109/VLSIC.1988.1037397
M. Nayebi, B. Wooley
I. lntroductbn ABiCMOSooerationalampllierwiihd.e. aainof 6548 and bandwidthofover ~ O O M H Z sdescrlbed The amp noer can awe a 5OLlload wnn a Yonage sw ng 01 T I V h JSS t5 V and -5 V s~pplies and ach wes a 110 dB CMRR h s mended lor ,re in samp e-and-hola and anaog-to-algira mnvnrslon systemsoperat ngstvaeofreqLenciesenaabove. Thec rc~nisoeinglabr caleo n a BiCMOS tscnm ogy dew opea lor high.rpeed stalc RAM app cat ons. The tecnnology LSBO 1.1 dosgn wles. ana the m n mJm emmer sze IS 1 .I +m x 3pm. The0 e s!2e is38 x47 m'P. Tnepowerdtss paton en tnemre oltneampdier s112mW,wh etnat mtheonp~tstage s300mW.
一、介绍abicmos操作放大器。本文介绍了该放大器在功率为6548、带宽为~ 50hz的情况下,可承受50hz的负载,使用jss5 ~ 5v和- 5v的电源,并可实现110 dB的CMRR,适用于在上述频率范围内工作的采样-全息和模数-算法管理系统。在BiCMOS技术中,可获得较高的工作效率。加速内存应用程序启动。该技术为lsbo1.1。我想说的是,这是一种面积为1平方米× 3平方米的大型建筑。他们是!尺寸为38 × 47 m'P。其中,发电机组装机容量为112mw,发电机组装机容量为300mw。
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引用次数: 1
VLSI chip-set for personal computers 用于个人计算机的VLSI芯片组
Pub Date : 1900-01-01 DOI: 10.1109/VLSIC.1988.1037411
T. Machida, T. Matsuda, F. Tsukuda, R. Hashishita
This paper will describe a V U 1 chip-set for Personal Computers. It consists of Peripheral Controller (PERIJ made of I1 standard peripheral mega-macro block, Text Controller (CRZT), and Graphics Controller (CRTG). The chips fully utilize hierarchical automatic layout design system. 205K transistors have been integrated by a three chip-set. They have been fabricated by I.5pm double metal-layer CMOS process technology. The chip-set allows to design a personal computer of M-size with CPU, memory and some inteqace logics. The personal computer consumes only 114 of power. compared to a standard version with the same system configuration. Introduction : This paper describes a VLSI chip-set for Personal Computers. The set consists of Peripheral Controller (PERI), Text Controller (CRm), and Graphics Controller bus and address bus. Bus controller gives bus interface Control signals, such as memory readlwrite and I10 readwrite, to mega-macro blocks. Custom-macro blocks are provided to realize user-defined functions, such as timing control of the device, extemal interface, offchip memory interface, and so on. Standard cell approach realizes these custom-macros. Microphotograph of the chip is shown in Fig.3. The CRTT contains a Graphic Display Controller (GDC) mega-macro and 5.4K-gate custom-macro.The CRTG contains a GDC and 11 .5K-gate custom-macro. Table 1 summarizes features of three chips. Fig.4 shows an example of PC system configuration by the chip-set. As is shown, only the interface logics are required, in addition to ROM/RAM and CPU. Mega-Macro Blocks : The mega-macro blocks are the (CKIti). A VLSI chip-set which integrates various standard peripheral LSIs is highly required by system vendors so that a small system with low Power consumption can be realized. In this case, the chip-set should be software-compatible with the off-the-shelf standard peripheral LSIs, and should be developedin shortperiod. A simple way of implementing such VLSIs without modifying the original LSIS tends to have enormous chip area. Entirely new design of standard LSI by another technology, such as standard cell approach, also has enormous man-power to modify existing standard LSI circuit for standard cell. mozified versions of standard m&roprocessor peripheral controllers. Features of mega-macros are shown in Table 2. Use of a mega-macro block reduces the number of transistors and area size, compared to the standard cell approach. For example, the PI0 mega-macro block has 2,500 transistors, however it would have 4,400 transistors if it were designed by using standard cell technique. In the PERI-chip case, this technique has reduced 37% of total chip size than the standard cell design. The original layout of standard LSIs were used as first approximation of mega-macro blocks, then VO pads were stripped out to have the smallest block area. It has brought 25% to 54% of area reduction, compared to ones with The chip-set has been developed to fulfill these I/O Dads. The oumut
本文将介绍一种用于个人计算机的vu1芯片组。它由外设控制器(PERIJ)、文本控制器(CRZT)和图形控制器(CRTG)组成。该芯片充分利用了分层自动布局设计系统。205K晶体管由三芯片组集成。采用I.5pm双金属层CMOS工艺技术制备。该芯片组允许设计m大小的个人计算机,包括CPU、内存和一些接口逻辑。个人电脑只消耗百分之114的电力。与具有相同系统配置的标准版本相比。介绍了一种用于个人计算机的VLSI芯片组。该设备由外围控制器(PERI)、文本控制器(CRm)、图形控制器总线和地址总线组成。总线控制器给总线接口控制信号,如存储器读写和I10读写,给宏块。提供自定义宏块来实现自定义功能,如设备的定时控制、外部接口、片外存储器接口等。标准单元格方法实现了这些自定义宏。芯片的显微照片如图3所示。CRTT包含一个图形显示控制器(GDC)宏和5.4门自定义宏。CRTG包含一个GDC和11.5 k栅极自定义宏。表1总结了三种芯片的特点。图4显示了一个通过芯片组配置PC系统的示例。如图所示,除了ROM/RAM和CPU之外,只需要接口逻辑。超级宏块:超级宏块是(CKIti)。系统厂商对集成各种标准外设lsi的VLSI芯片组提出了很高的要求,以实现低功耗的小系统。在这种情况下,芯片组应该与现成的标准外设lsi软件兼容,并且应该在短时间内开发完成。实现这种vlsi而不修改原始LSIS的简单方法往往具有巨大的芯片面积。采用另一种技术,如标准单元法来设计全新的标准LSI,也需要大量的人力来修改现有的标准LSI电路以适应标准单元。标准m&roprocessor外设控制器的授权版本。表2显示了巨型宏的特性。与标准单元方法相比,使用宏块可以减少晶体管的数量和面积大小。例如,PI0兆宏模块有2500个晶体管,但如果使用标准单元技术设计,它将有4400个晶体管。在佩里芯片的情况下,该技术比标准电池设计减少了总芯片尺寸的37%。使用标准lsi的原始布局作为宏块的第一近似,然后剥离VO焊盘以获得最小的块面积。它带来了25%到54%的面积减少,相比之下,芯片组已经开发,以满足这些I/O爸爸。采用标准LSI制作外设超大宏块,采用层次化自动设计系统,采用双金属层1.5pn CMOS工艺技术,采用标准LSI作为超大宏块的基础,采用自动布局系统,减少了人工成本。比较被重新设计为能够驱动内部公共总线。工艺转换:为了统一工艺技术,对PERI芯片中的BC和DMAC进行了重新设计,以实现宏实现。双金属层工艺技术。这可以很容易地从IO手动实现中转移过来。双金属层技术也实现了合理的芯片尺寸,虽然原来的lsi是原始的单层工艺。被用来利用原来的布局设计。该工艺技术还实现了自动布局设计的高设计灵活性,保持了lsi的原始性能。该芯片组采用1.5pm双金属层CMOS技术制造,芯片组中集成了大约205K晶体管。它具有8种外设功能,比标准的基于LSI的系统功耗降低了114。芯片集结构:芯片集结构如图1所示。每个芯片包含两种不同类型的块:巨型宏块和自定义宏块。该芯片有7种类型的11个宏块。它们是:软盘控制器(FDC), 8级优先输入控制器(PIC), 4通道8- bidbit DMA控制器(DMAC), 3通道16位定时器(TIM),总线控制器(BC),同步/异步串行110控制器(SIO)。和三字节并行YO控制器(PIO)。此外,它还具有5k门自定义宏来实现其他功能。框图如图2所示。在芯片中,宏块通过内部数据相互连接。 自动设计:采用层次化自动布局系统设计芯片组。该系统采用了三个自动排样程序。多单元布局程序设计自定义宏块。芯片的分层布局设计要求布局程序对不同尺寸和形状的各种宏块进行放置和互连。Floor Planner和Building Block Layout Program分别应用于宏块的放置和相互连接。该布局体系和设计流程如图5所示。首先,Floor Planner在实际设计每个自定义宏块之前进行宏块放置。它试图通过确定每个自定义宏块的大小、长宽比和终端位置来将宏块放置在最小的区域。平面图确定后,根据平面图结果进行自定义宏块的布置。然后,自定义宏块、超大宏块和VO块通过构建块布局程序相互连接。这个过程在较短的TAT(周转时间)内迭代,直到达到最佳布局。这种自动的方法带来了
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引用次数: 0
Enhanced implication for automatic test pattern generation 增强了自动测试模式生成的含义
Pub Date : 1900-01-01 DOI: 10.1109/VLSIC.1988.1037427
S. Hamilton
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引用次数: 0
Network-component chip set for a parallel processor system 用于并行处理器系统的网络组件芯片组
Pub Date : 1900-01-01 DOI: 10.1109/VLSIC.1988.1037413
K. Kaneko, S. Goldta, T. Kishi, Y. Tsue, K. Zaiki, M. Watanabe, T. Mimura, H. Kadota
Introduction For the past twenty years. parallel processing has been considered a promlslng technlque for hlgh-performance computers of the next generation. Recently. several machlnes wlth parallel architecture have become commercially available. but their performancc Is lower than what has been expected. One of the maJor problems to be solved for a hlgh performancc parallel machlne Is deslgnlng a n efficlent network for transfenlng data between the processor elements (PES). A new network Structure for a parallel processor system. ADENA. has been proposed[ll. which wlll reallze emdent data transmlsslon and hlgh-speed numerical computatlon. In thls paper. two component devlces. a chlp set for bulldlng that network, wlll be descrlhed. The first chip. HM. Is a high-performance bldlrectional Buffer-Memory (FIFO) array. and the second chlp. SRC. Is a data-Send/ReecRc Controller. Two new techniques are used to get a hlgh data-hansfa rate: 11 Metchlng Butfn-Memory status I : empty/rUll I by SRC. 21 C m l t deslgn for a high-speed RFO wlth m m u m readnow-hugh ume. The peak data-transfer rate through these chips is zOMBytes/s for each bus. The structure and the usage of the network are also dlscussed.
在过去的二十年里。并行处理已被认为是下一代高性能计算机的一项有待解决的技术。最近。一些机器与lth并行架构已经成为商业可用。但他们的表现低于预期。高性能并行机需要解决的主要问题之一是如何设计一个有效的网络来实现处理器单元之间的数据传输。一种新的并行处理器系统网络结构。阿登纳人。已被提议[1]。实现了实时数据传输和高速数值计算。在这篇论文中。两个组件的设备。我们将描述用于构建该网络的CHLP集。第一个芯片。嗯。是一个高性能的定向缓冲存储器(FIFO)阵列。第二个chlp。SRC。是一个数据发送/ReecRc控制器。采用了两种新技术来获得高数据传输率:11 Metchlng button - memory status I: empty/rUll I by SRC。本文介绍了一种高速RFO的设计方法,该设计方法采用了高速RFO的设计方法。每个总线通过这些芯片的峰值数据传输速率为zOMBytes/s。讨论了网络的结构和使用方法。
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引用次数: 2
Memory design strategy 内存设计策略
Pub Date : 1900-01-01 DOI: 10.1109/VLSIC.1988.1037402
S. Matsue
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引用次数: 0
A 7.5ns 32K x 8 high-speed CMOS SRAM 7.5ns 32K x 8高速CMOS SRAM
Pub Date : 1900-01-01 DOI: 10.1109/VLSIC.1988.1037417
H. Okuyana, T. Nakano, S. Nishida, Jun Fukuchi, S. Arita
11. CIRCUIT CONFIGURATION The chip architecture of the RM is shown in Figure 1. The memry cell array is divided into 32 blocks allovs divided-word-line architecture. A main vord line runs Y-direction in the second-level metal and the divided vord lines drives only 64 memory cells. A bit line, vhich runs X-direction in the first-level =tal. is connected to only 128 memory cells. Also. only one of 32 blocks is activated remining other blocks in a standby state so that the pover dissipation is reduced. Figurq 2 and 3 shov the read out circuit and the internal timing diagram of theRAN. Double Activated Pulse: Yo&Line-Enable(nE) pulse and SenseAmplifier-Enable&#) pulse are generated by the Ampulse vhich is generated by detecting the transition of all addresses and CE input. So far the WLEpulse. vhich activates the vord line. was generated by the fallins edge of the ATl-pulse to obtain immunity against address skevs. This technique hinders the high speed access because of its stable operation. But in this RAN the LE-pulse is generated by the rising e k e of the ATl-pulse. not by the falling edge, so that the vord line is immediately turned on after an address transition occurs. Therefore it has been possible to reduce access time by the active period o f the ATD-pulse. On the other hand in order to o h i n sufficient immunity against address skevs. the SAE-pulse vhich activates the bus lines and the sense amplifiers is generated by the falling e k e of the ATl-pulse. The RC delay both of the rord lines and of the bit lines are reduced by the chip architecture. "he bus lines and the sense amplifiers are activated after all address changes have been stable. Consesuentlv it has been possible to obtain immunity aminst address skevs. After the data is E c h e d to the output buffer, the =-pulse and the SAE-pulse are inactivated . (1) Therefore, the power dissipation has been reduced in case of a long cycle read operation. Consequently. the high speed access, the lor pover dissipation and the complete immunity against address skevs have been achieved by usim this Double Activated Pulse circuit. To reduce the transition time of the output buffer, nev data output reset circuit has been developed. The data output is reset to a intermediate level before the true data output appars. In this circuit, the current through both the data output nchannel and p-channel HOSFET's is nothing. The true data output changes from the intermediate level. Therefore it has been possible to achieve the high speed access and to diminish the noise vhich occurrs oving to the peak current of the output buffer.
11. RM的芯片架构如图1所示。存储单元阵列被分成32个块,允许分字行结构。主字线在第二级金属中沿y方向运行,分割的字线仅驱动64个存储单元。一个位线,在第一级=tal中运行x方向。只连接了128个存储单元。也。32个区块中只有一个被激活,使其他区块处于备用状态,从而降低功耗。图2和图3显示了theRAN的读出电路和内部时序图。双激活脉冲:Yo&Line-Enable(nE)脉冲和senseamplier - enable &#)脉冲由Ampulse产生,Ampulse通过检测所有地址和CE输入的转换而产生。到目前为止,WLEpulse。激活单词线。由atl脉冲的下降沿产生,以获得对地址偏差的免疫。这种技术由于运行不稳定,阻碍了高速接入。但是在这个RAN中,le脉冲是由atl脉冲的上升eke产生的。而不是通过下降沿,以便在地址转换发生后立即打开单词行。因此,可以通过atd脉冲的活动周期来减少访问时间。另一方面,为了使其对地址偏差有足够的免疫力。激活母线和感测放大器的sae脉冲是由atl脉冲的降频产生的。芯片结构降低了线和位线的RC延迟。“在所有地址变化稳定后,公交线路和感应放大器被激活。因此,有可能获得对地址偏差的豁免。当数据被传输到输出缓冲区后,=-脉冲和sae脉冲失效。(1)因此,在长周期读操作的情况下,降低了功耗。因此。该双激活脉冲电路具有高速接入、低功耗和对地址偏差的完全抗扰性。为了缩短输出缓冲器的转换时间,设计了新的数据输出复位电路。在真正的数据输出出现之前,数据输出被重置到中间电平。在这个电路中,通过数据输出n通道和p通道的hosset的电流都是零。真实的数据输出从中间级别改变。因此,有可能实现高速访问并减少发生在输出缓冲器的峰值电流附近的噪声。
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引用次数: 1
The TRON project and development of a TRON-spec 32-bit microprocessor TRON项目和TRON规格32位微处理器的开发
Pub Date : 1900-01-01 DOI: 10.1109/VLSIC.1988.1037396
K. Sakamura, K. Kimbara, Y. Tominaga
All of us are well aware of the remarkably rapid pace of progress being made in semiconductor technology. This progress is spreading far and wide, high and low. As part of it. we're seeing -if not building -ever-smaller VLSl microprocessors that offer continually higher levels of performance. And these microprocessors are spreading in use and utility, to where they now are used in connection with or embedded in daily items and pieces of equipment that offer performance that was previously qu i t e inconceivable.
我们大家都很清楚半导体技术的发展速度非常快。这一进步正在向四面八方、四面八方蔓延。作为其中的一部分。我们看到——如果不是制造的话——越来越小的VLSl微处理器提供了不断提高的性能水平。这些微处理器的使用范围和实用性正在扩大,现在它们被用于与日常用品和设备相连接或嵌入其中,这些设备提供了以前难以想象的性能。
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引用次数: 0
RSD cyclic analog-to-digital converter RSD循环模数转换器
Pub Date : 1900-01-01 DOI: 10.1109/VLSIC.1988.1037455
B. Ginetti, A. Vandemeulebroecke, P. Jespers
{"title":"RSD cyclic analog-to-digital converter","authors":"B. Ginetti, A. Vandemeulebroecke, P. Jespers","doi":"10.1109/VLSIC.1988.1037455","DOIUrl":"https://doi.org/10.1109/VLSIC.1988.1037455","url":null,"abstract":"","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133422406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
A high-performance VFO-LSIusing 2-/spl mu/m CMOS analog and digital standard cell methodology 采用2-/spl μ m CMOS模拟和数字标准单元方法的高性能vfo - lsiv
Pub Date : 1900-01-01 DOI: 10.1109/VLSIC.1988.1037450
S. Fujii, H. Satoh, H. Shimizu, K. Matsuo, M. Kaizuka, I. Tsuchiya, K. Kasai
{"title":"A high-performance VFO-LSIusing 2-/spl mu/m CMOS analog and digital standard cell methodology","authors":"S. Fujii, H. Satoh, H. Shimizu, K. Matsuo, M. Kaizuka, I. Tsuchiya, K. Kasai","doi":"10.1109/VLSIC.1988.1037450","DOIUrl":"https://doi.org/10.1109/VLSIC.1988.1037450","url":null,"abstract":"","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114611433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A video frequency bit-parallel CMOS FIR median hybrid filter 一种视频位并行CMOS FIR中值混合滤波器
Pub Date : 1900-01-01 DOI: 10.1109/VLSIC.1988.1037445
O. Vainio, H. Tenhunen, T. Korpiharju, J. Tomberg, Y. Neuvo
Abs t r ac t Fast pipelined implementat ion of t h e F E Median Hybr id filter has been designed on CM09. The Blter structure combines linear averaging subBltto a median opera t ion in a way that leads to a very efeeieet implementation. The fi l ter removes noise while preserving sharp edges in t h e signals. The integrated circuit c a n operate up to SOME. clock r a t e s and it is capable of 5ltving real time video aignals including future HDTV applications. The window size is adjustable from S to 257 samples.
本文在CM09上设计了fe中值混合滤波器的快速流水线实现。Blter结构将线性平均子Blter与中值运算结合在一起,以一种非常有效的方式实现。该滤波器去除噪声,同时保持信号的尖锐边缘。集成电路c a n工作到SOME。它可以接收实时视频信号,包括未来的高清电视应用。窗口大小可调,从S到257个样品。
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引用次数: 4
期刊
Symposium 1988 on VLSI Circuits
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