Pub Date : 2012-03-14DOI: 10.1109/ICCDCS.2012.6188885
E. Gutiérrez-D., E. P. de los A, V. H. Vega-G, F. Guarín
We have measured gate current components from the axis perpendicular-to-the-surface. The measured channel magneto-conductance shows also a pronounced magnetic asymmetry, which suggests the channel current is flowing into different crystallographic orientations with different effective masses and hole mobilities. By monitoring the different crystallographic components of the hole flow we have enhanced the understanding of the physics for Si-oxide interface charge transfer and channel conductance in low-dimensional semiconductor devices.
{"title":"Magneto-conduction in strained nano-scaled pMOSFETs","authors":"E. Gutiérrez-D., E. P. de los A, V. H. Vega-G, F. Guarín","doi":"10.1109/ICCDCS.2012.6188885","DOIUrl":"https://doi.org/10.1109/ICCDCS.2012.6188885","url":null,"abstract":"We have measured gate current components from the axis perpendicular-to-the-surface. The measured channel magneto-conductance shows also a pronounced magnetic asymmetry, which suggests the channel current is flowing into different crystallographic orientations with different effective masses and hole mobilities. By monitoring the different crystallographic components of the hole flow we have enhanced the understanding of the physics for Si-oxide interface charge transfer and channel conductance in low-dimensional semiconductor devices.","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124734941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-14DOI: 10.1109/ICCDCS.2012.6188926
J. Font, E. Isern, M. Roca, R. Picos, E. García-Moreno
A new Q-tuning scheme for biquad OTA-C filters is presented. We have taken benefit of the advantages of the classical Phase-Locked Loop scheme to tune the center frequency and we have also applied it to Q-tuning. The unique requirement for these biquad filters is that fo-tuning and Q-tuning must be uncoupled and independent. Tunability and versatility of OTAs have been fully exploited attaining quality factors with accuracy errors smaller than 1%.
{"title":"A new self Q-tuning scheme for biquad OTA-C filters","authors":"J. Font, E. Isern, M. Roca, R. Picos, E. García-Moreno","doi":"10.1109/ICCDCS.2012.6188926","DOIUrl":"https://doi.org/10.1109/ICCDCS.2012.6188926","url":null,"abstract":"A new Q-tuning scheme for biquad OTA-C filters is presented. We have taken benefit of the advantages of the classical Phase-Locked Loop scheme to tune the center frequency and we have also applied it to Q-tuning. The unique requirement for these biquad filters is that fo-tuning and Q-tuning must be uncoupled and independent. Tunability and versatility of OTAs have been fully exploited attaining quality factors with accuracy errors smaller than 1%.","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"69 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127981131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-14DOI: 10.1109/ICCDCS.2012.6188892
E. Miranda, J. Suñé, C. Mahata, T. Das, C. Maiti
The breakdown spots spatial distribution in metal gate/high-K/III-V semiconductor capacitors caused by severe electrical stress is investigated. The spots appear as a random point pattern on the top electrode and are the consequence of important thermal effects occurring at the very moment of the formation of filamentary leakage current paths across the gate oxide stack. The damage is permanent, easily detectable without any image or sample treatment and accumulates with the application of successive stresses. It is shown using spatial statistics techniques that despite the distribution of spots is anomalous in the periphery of the devices, they follow a Poisson process within the structure far from the edges.
{"title":"Study of the spatial distribution of breakdown spots in MOS devices in case of important edge effect anomalies","authors":"E. Miranda, J. Suñé, C. Mahata, T. Das, C. Maiti","doi":"10.1109/ICCDCS.2012.6188892","DOIUrl":"https://doi.org/10.1109/ICCDCS.2012.6188892","url":null,"abstract":"The breakdown spots spatial distribution in metal gate/high-K/III-V semiconductor capacitors caused by severe electrical stress is investigated. The spots appear as a random point pattern on the top electrode and are the consequence of important thermal effects occurring at the very moment of the formation of filamentary leakage current paths across the gate oxide stack. The damage is permanent, easily detectable without any image or sample treatment and accumulates with the application of successive stresses. It is shown using spatial statistics techniques that despite the distribution of spots is anomalous in the periphery of the devices, they follow a Poisson process within the structure far from the edges.","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"59 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129494597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-14DOI: 10.1109/ICCDCS.2012.6188891
S. Khandelwal, T. Fjeldly
In this paper we present a physics-based analytical model for the gate capacitance Cg in AlGaN/GaN HEMT devices. A continuous and analytical expression for the 2-DEG charge density ns is developed from the consistent solution of Schrodinger's and Poisson's equation in a quantum well with triangular potential profile. The developed ns expression is used to derive the model for Cg. The proposed model is valid in all regions of device operation and has no empirical parameters. The model is in excellent agreement with experimental data.
{"title":"A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices","authors":"S. Khandelwal, T. Fjeldly","doi":"10.1109/ICCDCS.2012.6188891","DOIUrl":"https://doi.org/10.1109/ICCDCS.2012.6188891","url":null,"abstract":"In this paper we present a physics-based analytical model for the gate capacitance Cg in AlGaN/GaN HEMT devices. A continuous and analytical expression for the 2-DEG charge density ns is developed from the consistent solution of Schrodinger's and Poisson's equation in a quantum well with triangular potential profile. The developed ns expression is used to derive the model for Cg. The proposed model is valid in all regions of device operation and has no empirical parameters. The model is in excellent agreement with experimental data.","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133096309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/iccdcs.2012.6238548
P. Chaturvedi, N. Goyal
Gate leakage is one of the important parameter expected to limit the performance of Tunnel FETs. We have simulated the effect of gate dielectric thickness on gate leakage in Tunnel FETs, using two dimensional numerical simulations. It has been observed that gate leakage considerably affects the subthreshold characteristics of TFETs. It was found to be most important component of off-state current and should be considered in future TFET device design. Effects of gate metal workfunction on device characteristics, particularly, gate leakage and origin of reverse tunneling at drain have also been discussed
{"title":"Effect of gate dielectric thickness on gate leakage in tunnel field effect transistor","authors":"P. Chaturvedi, N. Goyal","doi":"10.1109/iccdcs.2012.6238548","DOIUrl":"https://doi.org/10.1109/iccdcs.2012.6238548","url":null,"abstract":"Gate leakage is one of the important parameter expected to limit the performance of Tunnel FETs. We have simulated the effect of gate dielectric thickness on gate leakage in Tunnel FETs, using two dimensional numerical simulations. It has been observed that gate leakage considerably affects the subthreshold characteristics of TFETs. It was found to be most important component of off-state current and should be considered in future TFET device design. Effects of gate metal workfunction on device characteristics, particularly, gate leakage and origin of reverse tunneling at drain have also been discussed","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117205872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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