Pub Date : 1977-09-01DOI: 10.1049/IJ-SSED:19770019
J. White, T. F. Unter, J. Smith
A nondestructive contactless technique which allows high-resolution point-by-point measurement of minority carrier lifetime and diffusion length in silicon, without the need for special structures, is described. Excess carriers are generated at a known rate by a 1 mW He-Ne laser beam focused to a fine spot on the silicon surface. The resulting total carrier number, which is inversely proportional to the recombination time, is detected by a novel infra-red emission technique. Spatial variations of lifetime have been measured, and small regions of high recombination located. Many of these can be associated with oxidation-induced stacking faults. The diffusion length is measured directly by observing the variation of carrier concentration with distance away from the point of injection. The technique is applicable to other semiconductors, and will be particularly valuable where it is difficult to make electrical contact.
{"title":"Contactless nondestructive technique for the measurement of minority-carrier lifetime and diffusion length in silicon","authors":"J. White, T. F. Unter, J. Smith","doi":"10.1049/IJ-SSED:19770019","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19770019","url":null,"abstract":"A nondestructive contactless technique which allows high-resolution point-by-point measurement of minority carrier lifetime and diffusion length in silicon, without the need for special structures, is described. Excess carriers are generated at a known rate by a 1 mW He-Ne laser beam focused to a fine spot on the silicon surface. The resulting total carrier number, which is inversely proportional to the recombination time, is detected by a novel infra-red emission technique. Spatial variations of lifetime have been measured, and small regions of high recombination located. Many of these can be associated with oxidation-induced stacking faults. The diffusion length is measured directly by observing the variation of carrier concentration with distance away from the point of injection. The technique is applicable to other semiconductors, and will be particularly valuable where it is difficult to make electrical contact.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128114776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1977-09-01DOI: 10.1049/IJ-SSED:19770022
A. Sangster
An analytical large-signal model of a 2-cavityemission modulated microwave amplifier (a `femitron?) with a field-emission cathode has been developed. Typical gain, efficiency and power-output results are presented for an S-band device that is currently under development. Gain predictions are in good agreement with earlier published results, but efficiency estimates are less optimistic than have been suggested elsewhere.
{"title":"Field-emission microwave amplifier: a reappraisal","authors":"A. Sangster","doi":"10.1049/IJ-SSED:19770022","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19770022","url":null,"abstract":"An analytical large-signal model of a 2-cavityemission modulated microwave amplifier (a `femitron?) with a field-emission cathode has been developed. Typical gain, efficiency and power-output results are presented for an S-band device that is currently under development. Gain predictions are in good agreement with earlier published results, but efficiency estimates are less optimistic than have been suggested elsewhere.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126418720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1977-09-01DOI: 10.1049/IJ-SSED:19770023
D. Morgan, M. Howes, S. Mukherjee, D. Taylor, P. Brook
Thermal interdiffusion in the Cr/Pt/Ag metallisation system used for silicon impatt diodes has been characterised using Rutherford backscattering of helium ions. Considerable interdiffusion, characterised by an activation energy of 0·5 eV, is observed in the Pt/Ag thin-film boundary, the Cr/Pt interface is found to be stable up to 400°C with practically no observable diffusion.
{"title":"Interdiffusion of Cr/Pt/Ag metallisation layers on silicon impatt diodes","authors":"D. Morgan, M. Howes, S. Mukherjee, D. Taylor, P. Brook","doi":"10.1049/IJ-SSED:19770023","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19770023","url":null,"abstract":"Thermal interdiffusion in the Cr/Pt/Ag metallisation system used for silicon impatt diodes has been characterised using Rutherford backscattering of helium ions. Considerable interdiffusion, characterised by an activation energy of 0·5 eV, is observed in the Pt/Ag thin-film boundary, the Cr/Pt interface is found to be stable up to 400°C with practically no observable diffusion.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128275858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1977-09-01DOI: 10.1049/IJ-SSED:19770020
R. Pollard, J. H. Michael
The large-signal characterisation of 2-terminal, solid-state oscillator devices operating in microwave circuits may be achieved using a technique for measuring the circuit admittance seen from the device chip. The method provides a means of making such a measurement with the minimum of assumptions, especially in respect of the encapsulation. Results are presented in the form of a 3-dimensional ‘device surface’ of the complex admittance as a function of frequency and r.f. amplitude.
{"title":"In-circuit characterisation technique for barritt diodes and other 2-terminal negative-resistance oscillator devices","authors":"R. Pollard, J. H. Michael","doi":"10.1049/IJ-SSED:19770020","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19770020","url":null,"abstract":"The large-signal characterisation of 2-terminal, solid-state oscillator devices operating in microwave circuits may be achieved using a technique for measuring the circuit admittance seen from the device chip. The method provides a means of making such a measurement with the minimum of assumptions, especially in respect of the encapsulation. Results are presented in the form of a 3-dimensional ‘device surface’ of the complex admittance as a function of frequency and r.f. amplitude.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126033404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1977-07-01DOI: 10.1049/IJ-SSED.1977.0014
H. T. Saelee, J. Lucas, J. W. Limbeek
The drift velocity and longitudinal diffusion coefficient have been obtained for electrons from measurements of the transit time of a pulsed electron swarm across a uniform electric field gap. Values have been obtained for electrons in nitrogen, carbon monoxide, carbon dioxide and hydrogen for high values of E/N (the ratio of electric field to gas number density) in the range 28 ≤ E/N ≤ 706 Td (1 Td = 10−21 Vm2)
{"title":"Time-of-flight measurement of electron drift velocity and longitudinal diffusion coefficient in nitrogen, carbon monoxide, carbon dioxide and hydrogen","authors":"H. T. Saelee, J. Lucas, J. W. Limbeek","doi":"10.1049/IJ-SSED.1977.0014","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1977.0014","url":null,"abstract":"The drift velocity and longitudinal diffusion coefficient have been obtained for electrons from measurements of the transit time of a pulsed electron swarm across a uniform electric field gap. Values have been obtained for electrons in nitrogen, carbon monoxide, carbon dioxide and hydrogen for high values of E/N (the ratio of electric field to gas number density) in the range 28 ≤ E/N ≤ 706 Td (1 Td = 10−21 Vm2)","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123046566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1977-07-01DOI: 10.1049/IJ-SSED:19770012
R. Warriner
A gallium arsenide diode structure is simulated using a particle-mesh computer model. The model incorporates two dimensions in configuration space, and three dimensions in k-space, with a full description of the material scattering cross-section, which is implemented using Monte-Carlo techniques. Detailed information about electric field and valley population profiles is presented for both dipole domain, and l.s.a. modes of operation. Comparison is made with the widely differing previous theoretical results.
{"title":"Computer simulation of negative-resistance oscillators using a Monte-Carlo model of gallium arsenide","authors":"R. Warriner","doi":"10.1049/IJ-SSED:19770012","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19770012","url":null,"abstract":"A gallium arsenide diode structure is simulated using a particle-mesh computer model. The model incorporates two dimensions in configuration space, and three dimensions in k-space, with a full description of the material scattering cross-section, which is implemented using Monte-Carlo techniques. Detailed information about electric field and valley population profiles is presented for both dipole domain, and l.s.a. modes of operation. Comparison is made with the widely differing previous theoretical results.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121867140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1977-07-01DOI: 10.1049/IJ-SSED:19770015
P. Froome, A. Beck
Josephson junctions using Dayem bridges made from unusually thin films have been operated as mixers. The thickness of the film was made small to increase the r.f. impedance of the device and so to improve r.f. matching, but such thin films often fail to act as Josephson junctions because of surface roughness. In the device reported here, attempts were made to obtain specular reflection of the electron wave functions from the surface. Our devices behaved as good Josephson junctions and gave an internal mixing efficiency of 4.5% at 32 GHz.
{"title":"Unusually thin Dayem bridges as Q-band mixers","authors":"P. Froome, A. Beck","doi":"10.1049/IJ-SSED:19770015","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19770015","url":null,"abstract":"Josephson junctions using Dayem bridges made from unusually thin films have been operated as mixers. The thickness of the film was made small to increase the r.f. impedance of the device and so to improve r.f. matching, but such thin films often fail to act as Josephson junctions because of surface roughness. In the device reported here, attempts were made to obtain specular reflection of the electron wave functions from the surface. Our devices behaved as good Josephson junctions and gave an internal mixing efficiency of 4.5% at 32 GHz.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128181982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1977-07-01DOI: 10.1049/IJ-SSED.1977.0013
R. Warriner
A gallium arsenide planar field-effect transistor (f.e.t.) structure is simulated using a particle-mesh computer model. The model incorporates two dimensions in configuration space and three dimensions in k-space; with a full description of the material scattering cross-section which is implemented using Monte-Carlo techniques. The f.e.t. static characteristic has been calculated together with the lumped equivalent-circuit paramters. A comparison is made between devices with and without substrate. Detailed information about electrostatic potential and valley population profiles is presented for the first time. Cole-Cole plots of complex output impedance are used in determining device frequency response.
{"title":"Computer simulation of gallium arsenide field-effect transistors using Monte-Carlo methods","authors":"R. Warriner","doi":"10.1049/IJ-SSED.1977.0013","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1977.0013","url":null,"abstract":"A gallium arsenide planar field-effect transistor (f.e.t.) structure is simulated using a particle-mesh computer model. The model incorporates two dimensions in configuration space and three dimensions in k-space; with a full description of the material scattering cross-section which is implemented using Monte-Carlo techniques. The f.e.t. static characteristic has been calculated together with the lumped equivalent-circuit paramters. A comparison is made between devices with and without substrate. Detailed information about electrostatic potential and valley population profiles is presented for the first time. Cole-Cole plots of complex output impedance are used in determining device frequency response.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115397609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1977-07-01DOI: 10.1049/IJ-SSED:19770017
S. Ahmad, J. Freyer, M. Claassen
A new method is presented for the determination of the large-signal negative resistance of baritt diodes. The simplicity is emphasised in terms of the ususal current/voltage characteristic measurements required. The diodes can thus be characterised, under actual operation conditions, in a microwave circuit, with the help of the present method.
{"title":"Simple method of determining the large-signal negative resistance of baritt diodes","authors":"S. Ahmad, J. Freyer, M. Claassen","doi":"10.1049/IJ-SSED:19770017","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19770017","url":null,"abstract":"A new method is presented for the determination of the large-signal negative resistance of baritt diodes. The simplicity is emphasised in terms of the ususal current/voltage characteristic measurements required. The diodes can thus be characterised, under actual operation conditions, in a microwave circuit, with the help of the present method.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121459203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1977-07-01DOI: 10.1049/IJ-SSED.1977.0016
P. Denyer, J. Mavor
Multitapped c.c.d. analogue delay lines have been produced with the floating-gate, reset-sensing technique. Although the efficacy of the approach has been demonstrated, no comprehensive design procedure exists to enable systematic device design. Because the c.c.d. and its associated tapping circuitry is an active structure, the operational parameter relationships are extremely complex and dependent on many physical effects. Some of these individual processes have been previously associated with a particular operating parameter, but, usually, for a nontapped device configuration. This paper summarises the basic performance limiting processes of floating-gate tapped c.c.d. delay lines, and presents a quantitative basis for designs and also for further analytical studies. In particular, 3-phase surface-channel devices are considered, although the analyses may be extended to other c.c.d. formations. The equations presented are related to a simple design example based upon a specification achievable in practical devices.
{"title":"Design of c.c.d. delay lines with floating-gate taps","authors":"P. Denyer, J. Mavor","doi":"10.1049/IJ-SSED.1977.0016","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1977.0016","url":null,"abstract":"Multitapped c.c.d. analogue delay lines have been produced with the floating-gate, reset-sensing technique. Although the efficacy of the approach has been demonstrated, no comprehensive design procedure exists to enable systematic device design. Because the c.c.d. and its associated tapping circuitry is an active structure, the operational parameter relationships are extremely complex and dependent on many physical effects. Some of these individual processes have been previously associated with a particular operating parameter, but, usually, for a nontapped device configuration. This paper summarises the basic performance limiting processes of floating-gate tapped c.c.d. delay lines, and presents a quantitative basis for designs and also for further analytical studies. In particular, 3-phase surface-channel devices are considered, although the analyses may be extended to other c.c.d. formations. The equations presented are related to a simple design example based upon a specification achievable in practical devices.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131871481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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