Pub Date : 1978-06-01DOI: 10.1049/IJ-SSED:19780020
A. Haigh, D. Hemingway, K. Watkin, A. Whale
A survey of work on terrestrial solar photovoltaic installations using silicon solar cells is presented, and three main areas are discussed. First, the possible processing routes for cell manufacture are considered and conclusions arrived at for the lowest-cost route. Secondly, cell encapsulation is considered with reference to the environmental stresses that an encapsulated module must withstand. Thirdly, the computation of installation parameters for minimum cost is described, an installation being defined as a stationary array of modules in conjunction with a rechargable battery.
{"title":"Review of technological and economic considerations in solar-cell manufacturing route, encapsulation and system design","authors":"A. Haigh, D. Hemingway, K. Watkin, A. Whale","doi":"10.1049/IJ-SSED:19780020","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780020","url":null,"abstract":"A survey of work on terrestrial solar photovoltaic installations using silicon solar cells is presented, and three main areas are discussed. First, the possible processing routes for cell manufacture are considered and conclusions arrived at for the lowest-cost route. Secondly, cell encapsulation is considered with reference to the environmental stresses that an encapsulated module must withstand. Thirdly, the computation of installation parameters for minimum cost is described, an installation being defined as a stationary array of modules in conjunction with a rechargable battery.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125001090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-06-01DOI: 10.1049/IJ-SSED:19780024
A. Putnis
The evidence that the two copper–sulphide phases, chalcocite and djurleite, can exist at the same compositions near Cu2S is briefly reviewed. Experimental data suggest that djurleite is the more stable phase at room remperatures and that a polymorphic chacocite→djurleite transformation may take place in the thin copper–sulphide layers present in solar cells. The kinetics of this transformation are discussed and related to low–temperature phase equilibria in the Cu/S systems around Cu2 S2 and to the processes that may operate in solar cells.
{"title":"Order-disorder transformations and the nature of the copper-suphide layer in CuxS/CdS solar cells","authors":"A. Putnis","doi":"10.1049/IJ-SSED:19780024","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780024","url":null,"abstract":"The evidence that the two copper–sulphide phases, chalcocite and djurleite, can exist at the same compositions near Cu2S is briefly reviewed. Experimental data suggest that djurleite is the more stable phase at room remperatures and that a polymorphic chacocite→djurleite transformation may take place in the thin copper–sulphide layers present in solar cells. The kinetics of this transformation are discussed and related to low–temperature phase equilibria in the Cu/S systems around Cu2 S2 and to the processes that may operate in solar cells.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121414493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-06-01DOI: 10.1049/IJ-SSED:19780018
H. Kressel
The paper reviews the major current US approaches to the cost reduction of solar cells, with the emphasis on silicon devices. Single-crystal, ribbon-grown and polycrystalline silicon solar cells are discussed.
{"title":"Approaches to low-cost solar cells","authors":"H. Kressel","doi":"10.1049/IJ-SSED:19780018","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780018","url":null,"abstract":"The paper reviews the major current US approaches to the cost reduction of solar cells, with the emphasis on silicon devices. Single-crystal, ribbon-grown and polycrystalline silicon solar cells are discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"624 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123079519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-06-01DOI: 10.1049/IJ-SSED:19780016
R. Hill
The methods that have been used successfully for the production of cadmium-sulphide layers in thin-film solar cells are described. The structural, optical and electrical properties of the resulting layers are discussed and related to the properties required in a high-efficiency thin-film solar cell. A description is also given of some less commonly used methods that might be developed into successful techniques for the production of large-area low-cost solar cells
{"title":"Cadmium-sulphide/copper-sulphide thin-film solar cells: review of methods of producing the CdS and Cu2S layers","authors":"R. Hill","doi":"10.1049/IJ-SSED:19780016","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780016","url":null,"abstract":"The methods that have been used successfully for the production of cadmium-sulphide layers in thin-film solar cells are described. The structural, optical and electrical properties of the resulting layers are discussed and related to the properties required in a high-efficiency thin-film solar cell. A description is also given of some less commonly used methods that might be developed into successful techniques for the production of large-area low-cost solar cells","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134485671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-06-01DOI: 10.1049/IJ-SSED:19780033
J. Burgess, Robert P. Davis, B. Debney, R. Nicklin
The performance of GaAs/Ga1-xAlxAs solar cells with graded-band-gap and window structures has been compared using standard theoretical modelling techniques. At high levels of solar concentration, superior power-conversion efficiencies are obtained with the graded-band-gap structures. The realisation of band-gap grading requires a precise control of gradation of the aluminium content during epitaxy, which is conveniently achieved using a vapour-phase technique. To grow good-quality Al-containing compounds, we have adopted the metallo-organic chemical-vapour-deposition (m.o.c.v.d.) process for the present work. Our system is designed for a rapid throughput of large-area slices, and complete multilayer structures can be prepared in under two hours. Solar-cell structures of the window type have been prepared bythe m.o.c.v.d. method, and also by liquid-phase epitaxy (l.p.e.). Test cells have been fabricated using in-house processing technology, and solar-cell performance has been assessed at concentration ratios up to 600. The performance of the l.p.e.- grown cells fits closely to that predicted, with the collection efficiency reaching 95#x0025;, Voc = 0.98 V and a fill factor of 0.8 at 1 sun.
{"title":"Gallium-arsenide solar cells for use with concentrated sunlight","authors":"J. Burgess, Robert P. Davis, B. Debney, R. Nicklin","doi":"10.1049/IJ-SSED:19780033","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780033","url":null,"abstract":"The performance of GaAs/Ga1-xAlxAs solar cells with graded-band-gap and window structures has been compared using standard theoretical modelling techniques. At high levels of solar concentration, superior power-conversion efficiencies are obtained with the graded-band-gap structures. The realisation of band-gap grading requires a precise control of gradation of the aluminium content during epitaxy, which is conveniently achieved using a vapour-phase technique. To grow good-quality Al-containing compounds, we have adopted the metallo-organic chemical-vapour-deposition (m.o.c.v.d.) process for the present work. Our system is designed for a rapid throughput of large-area slices, and complete multilayer structures can be prepared in under two hours. Solar-cell structures of the window type have been prepared bythe m.o.c.v.d. method, and also by liquid-phase epitaxy (l.p.e.). Test cells have been fabricated using in-house processing technology, and solar-cell performance has been assessed at concentration ratios up to 600. The performance of the l.p.e.- grown cells fits closely to that predicted, with the collection efficiency reaching 95#x0025;, Voc = 0.98 V and a fill factor of 0.8 at 1 sun.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132363680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-06-01DOI: 10.1049/IJ-SSED:19780023
D. Walsh, J. R. Knight, E. Asl-Soleimani
An account is given of the likely applications for silicon solar cells in systems employing optical concentration. The preparation of n+-p-p+ cells from monocrystalline and polycrystalline wafers together with preliminary performance characteristics are reported. A novel type of concentrating solar collector is described.
{"title":"Silicon solar cells for operation in concentrated sunlight","authors":"D. Walsh, J. R. Knight, E. Asl-Soleimani","doi":"10.1049/IJ-SSED:19780023","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780023","url":null,"abstract":"An account is given of the likely applications for silicon solar cells in systems employing optical concentration. The preparation of n+-p-p+ cells from monocrystalline and polycrystalline wafers together with preliminary performance characteristics are reported. A novel type of concentrating solar collector is described.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"258 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123472861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-06-01DOI: 10.1049/IJ-SSED:19780012
W. Townsend
The present state of silicon Schottky-barrier solar cell (s.b.s.c.) development is reviewed and the relative advantages and disadvantages of this type of cell compared with the competing homojunction cell technology. Recent work on cast silicon substrates is considered, and the conclusion drawn that Schottky-barrier cells are not likely to compete unless a wholly thin-film s.b.s.c. can be developed based on the favourable absorption properties of amorphous silicon. A number of problems requiring solution before s.b.s.c. can compete in terms of reliability and low cost for both thick- and thin-film cells are discussed.
{"title":"Schottky-barrier versus homojunction silicon solar cells: a status report","authors":"W. Townsend","doi":"10.1049/IJ-SSED:19780012","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780012","url":null,"abstract":"The present state of silicon Schottky-barrier solar cell (s.b.s.c.) development is reviewed and the relative advantages and disadvantages of this type of cell compared with the competing homojunction cell technology. Recent work on cast silicon substrates is considered, and the conclusion drawn that Schottky-barrier cells are not likely to compete unless a wholly thin-film s.b.s.c. can be developed based on the favourable absorption properties of amorphous silicon. A number of problems requiring solution before s.b.s.c. can compete in terms of reliability and low cost for both thick- and thin-film cells are discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126455746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-06-01DOI: 10.1049/IJ-SSED:19780013
M. Manshadi, J. Woods
Measurements of the shunt conductance of m.i.s. diodes of cadmium sulphide, formed by depositing gold on to surfaces of crystals previously etched in hydrochloric acid, are interpreted to suggest that there is a density of surface states of the order of 2.0 X 1011 cm-2 eV-1 at the interface between the CdS and the semi-insulating layer. Comparison of the voltage intercept of the C-2/V plots with the photoelectric threshold suggests that the etching leaves a semi-insulating layer with a thickness of 400?600 A on the surface of the CdS.
通过将金沉积到先前在盐酸中蚀刻的晶体表面而形成的硫化镉的m.i.s二极管的分流电导的测量，被解释为表明在CdS和半绝缘层之间的界面处存在着2.0 X 1011 cm-2 eV-1的表面态密度。C-2/V图的电压截距与光电阈值的比较表明，刻蚀后的半绝缘层厚度为400?cd表面的电流为600a。
{"title":"Surface states in m.i.s. devices of cadmium sulphide","authors":"M. Manshadi, J. Woods","doi":"10.1049/IJ-SSED:19780013","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780013","url":null,"abstract":"Measurements of the shunt conductance of m.i.s. diodes of cadmium sulphide, formed by depositing gold on to surfaces of crystals previously etched in hydrochloric acid, are interpreted to suggest that there is a density of surface states of the order of 2.0 X 1011 cm-2 eV-1 at the interface between the CdS and the semi-insulating layer. Comparison of the voltage intercept of the C-2/V plots with the photoelectric threshold suggests that the etching leaves a semi-insulating layer with a thickness of 400?600 A on the surface of the CdS.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130908962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-06-01DOI: 10.1049/IJ-SSED:19780019
R. Gibson, P. L. Comber, W. Spear
The paper deals with the development of the new field of substitutionally doped amorphous semiconductors, and discusses the possible application of amorphous silicon in cheap large-area photovoltaic devices. Preparation and doping from the gas phase are described and the properties of an amorphous junction are discussed.
{"title":"Doped amorphous silicon and its application in photovoltaic devices","authors":"R. Gibson, P. L. Comber, W. Spear","doi":"10.1049/IJ-SSED:19780019","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780019","url":null,"abstract":"The paper deals with the development of the new field of substitutionally doped amorphous semiconductors, and discusses the possible application of amorphous silicon in cheap large-area photovoltaic devices. Preparation and doping from the gas phase are described and the properties of an amorphous junction are discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"30 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115254587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-06-01DOI: 10.1049/IJ-SSED:19780025
M. Thompson, J. Allison, M. Alkaisi
The paper describes the progress that has so far been made in the sputtering of amorphous silicon for solar-cell applications. An alternative form of doping to doping from the gas phase is described. The results obtained are compared with those found for glow-discharge silicon. Finally, a discussion of the relative advantages of sputtering techniques emphasises their considerable potential for commercial exploitation in the production of thin-film solar cells.
{"title":"Doping of sputtered amorphous-silicon solar cells","authors":"M. Thompson, J. Allison, M. Alkaisi","doi":"10.1049/IJ-SSED:19780025","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780025","url":null,"abstract":"The paper describes the progress that has so far been made in the sputtering of amorphous silicon for solar-cell applications. An alternative form of doping to doping from the gas phase is described. The results obtained are compared with those found for glow-discharge silicon. Finally, a discussion of the relative advantages of sputtering techniques emphasises their considerable potential for commercial exploitation in the production of thin-film solar cells.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131818439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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