Pub Date : 1979-05-01DOI: 10.1049/IJ-SSED:19790017
A. Bogatov, Y. V. Gurov, P. Eliseev, O. Okhotnikov, G. Pak, K. A. Khairetdinov
A 4 mW tunable C.W. single-frequency operation of a diode laser coupled to an external dispersive cavity has been achieved at 300° K. With the appearance of low-frequency pulsations (l.f.p.) at the laser output the single-frequency oscillation is eliminated. The l.f.p. give rise to a few longitudinal modes of the external cavity. On the basis of self focusing a model for l.f.p. phenomenon is proposed
{"title":"Low-frequency pulsations in the output intensity and multimode operations of GaAs-AIGaAs C.W. diode laser coupled to an external dispersive cavity.","authors":"A. Bogatov, Y. V. Gurov, P. Eliseev, O. Okhotnikov, G. Pak, K. A. Khairetdinov","doi":"10.1049/IJ-SSED:19790017","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790017","url":null,"abstract":"A 4 mW tunable C.W. single-frequency operation of a diode laser coupled to an external dispersive cavity has been achieved at 300° K. With the appearance of low-frequency pulsations (l.f.p.) at the laser output the single-frequency oscillation is eliminated. The l.f.p. give rise to a few longitudinal modes of the external cavity. On the basis of self focusing a model for l.f.p. phenomenon is proposed","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"220 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124520067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-05-01DOI: 10.1049/IJ-SSED.1979.0015
G. Masetti, S. Solmi
Electron mobility measurements performed at room temperature on silicon samples, heavily doped with phosphorus by thermal diffusion, are reported. Results obtained on specimens predeposited for different times, temperatures and doping gas compositions show that the electron mobility μ depends only on the carrier concentration n, and continuously decreases as this parameter increases. It is shown that the electrically inactive phosphorus and associated defect complexes inherent in highly doped diffused regions are not responsible for the observed low mobility values. An empirical relationship between μ and n, valid for carrier concentrations up to 4 × 10 20 cm -3 , is derived. At concentrations lower than 10 19 cm -3 , when the electron density coincides with the impurity concentration, this formula gives values in agreement with published data obtained on silicon samples doped during crystal growth.
本文报道了在室温下对大量掺磷的硅样品进行的热扩散电子迁移率测量。对不同时间、温度和掺杂气体组成预沉积样品的结果表明，电子迁移率μ仅与载流子浓度n有关，并随着载流子浓度n的增加而不断降低。结果表明，高掺杂扩散区固有的电无活性磷和相关的缺陷配合物不是观察到的低迁移率值的原因。导出了μ和n之间的经验关系，该关系适用于载流子浓度达4 × 10 20cm -3的情况。在浓度低于10 19 cm -3时，当电子密度与杂质浓度一致时，该公式给出的值与在晶体生长过程中掺杂的硅样品所获得的公开数据一致。
{"title":"Relationship between carrier mobility and electron concentration in silicon heavily doped with phosphorus","authors":"G. Masetti, S. Solmi","doi":"10.1049/IJ-SSED.1979.0015","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0015","url":null,"abstract":"Electron mobility measurements performed at room temperature on silicon samples, heavily doped with phosphorus by thermal diffusion, are reported. Results obtained on specimens predeposited for different times, temperatures and doping gas compositions show that the electron mobility μ depends only on the carrier concentration n, and continuously decreases as this parameter increases. It is shown that the electrically inactive phosphorus and associated defect complexes inherent in highly doped diffused regions are not responsible for the observed low mobility values. An empirical relationship between μ and n, valid for carrier concentrations up to 4 × 10\u0000 20\u0000cm\u0000 -3\u0000, is derived. At concentrations lower than 10\u0000 19\u0000 cm\u0000 -3\u0000, when the electron density coincides with the impurity concentration, this formula gives values in agreement with published data obtained on silicon samples doped during crystal growth.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124578706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-05-01DOI: 10.1049/IJ-SSED:19790016
G. Mey
A theoretical analysis is given describing the Hall effect photovoltaic cell. By illuminating a homogeneous semiconductor, a diffusion of holes and electrons will occur in the direction of decreasing light intensity. Due to the Hall effect, caused by an external magnetic field, holes and electrons will be declined in opposite directions so that a net current will flow through the end contacts. Despite simple arguments indicating that choice of geometry and conductivity could give both high open circuit voltage and efficiency, the detailed analysis indicates that the photoconductivity of the material reduces the internal resistance and leads to low efficiencies.
{"title":"Theoretical analysis of the Hall effect photovoltaic cell","authors":"G. Mey","doi":"10.1049/IJ-SSED:19790016","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790016","url":null,"abstract":"A theoretical analysis is given describing the Hall effect photovoltaic cell. By illuminating a homogeneous semiconductor, a diffusion of holes and electrons will occur in the direction of decreasing light intensity. Due to the Hall effect, caused by an external magnetic field, holes and electrons will be declined in opposite directions so that a net current will flow through the end contacts. Despite simple arguments indicating that choice of geometry and conductivity could give both high open circuit voltage and efficiency, the detailed analysis indicates that the photoconductivity of the material reduces the internal resistance and leads to low efficiencies.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133555635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-03-01DOI: 10.1049/IJ-SSED.1979.0009
R. S. Huang, P. Ladbrooke
A technique is described which utilises a long-gate m.o.s.f.e.t. structure to measure carrier density and drift mobility profiles in submicrometre epitaxial and ion-implanted layers. Both profiles are recovered right up to the semiconductor surface. Application of the method to studying carrier transport processes in layers for short-gate f.e.t.s indicates that mobility degradation due to diffuse surface scattering occurs, resulting in a surface-mobility/bulk-mobility ratio varying between 0.5 and 1
{"title":"Determination of complete carrier density and drift mobility profiles in thin semiconductor layers","authors":"R. S. Huang, P. Ladbrooke","doi":"10.1049/IJ-SSED.1979.0009","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0009","url":null,"abstract":"A technique is described which utilises a long-gate m.o.s.f.e.t. structure to measure carrier density and drift mobility profiles in submicrometre epitaxial and ion-implanted layers. Both profiles are recovered right up to the semiconductor surface. Application of the method to studying carrier transport processes in layers for short-gate f.e.t.s indicates that mobility degradation due to diffuse surface scattering occurs, resulting in a surface-mobility/bulk-mobility ratio varying between 0.5 and 1","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124859689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-03-01DOI: 10.1049/IJ-SSED:19790010
B. Hoefflinger, K. Schumacher, H. Sibbert
An m.o.s. operational amplifier suitable for large-scale integration using n-channel enhancementdepletion technology is reported. It has a large gain of 94 dB, a unity-gain bandwidth of 1 MHz with a small power dissipation of 2.4 mW and it occupies only 0.2 mm2. These miniaturised amplifiers require computeraided design, and the capabilities of the nonlinear d.o.m.o.s. model and computer program are demonstrated. Simple equations for exploratory design and comparison with designs using weak-inversion, complementary or bipolar transistors are also discussed.
{"title":"Some design aspects of m.o.s.l.s.i. operational amplifiers","authors":"B. Hoefflinger, K. Schumacher, H. Sibbert","doi":"10.1049/IJ-SSED:19790010","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790010","url":null,"abstract":"An m.o.s. operational amplifier suitable for large-scale integration using n-channel enhancementdepletion technology is reported. It has a large gain of 94 dB, a unity-gain bandwidth of 1 MHz with a small power dissipation of 2.4 mW and it occupies only 0.2 mm2. These miniaturised amplifiers require computeraided design, and the capabilities of the nonlinear d.o.m.o.s. model and computer program are demonstrated. Simple equations for exploratory design and comparison with designs using weak-inversion, complementary or bipolar transistors are also discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133305316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-03-01DOI: 10.1049/IJ-SSED.1979.0012
O. Nielsen
Current-voltage characteristics obtained under dark and illuminated conditions have been examined for Al-p-Si MIS solar cells. The results obtained show that the voltage across the cells taken at the maximum-power point is typically 50 mV smaller when the cells are illuminated compared to the voltage at the same point in darkness. This is explained as an increase in the recombination current and as an increased concentration of minority carriers at the interface states of about 10 trillion/sq cm when going from dark to illuminated conditions. The result is that the fill factor obtained from the illuminated characteristic is about 9% smaller than if the fill factor is calculated from the dark characteristics.
{"title":"Effects of minority-carrier storage at the interface states on the fill factor of m.i.s. solar cells","authors":"O. Nielsen","doi":"10.1049/IJ-SSED.1979.0012","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0012","url":null,"abstract":"Current-voltage characteristics obtained under dark and illuminated conditions have been examined for Al-p-Si MIS solar cells. The results obtained show that the voltage across the cells taken at the maximum-power point is typically 50 mV smaller when the cells are illuminated compared to the voltage at the same point in darkness. This is explained as an increase in the recombination current and as an increased concentration of minority carriers at the interface states of about 10 trillion/sq cm when going from dark to illuminated conditions. The result is that the fill factor obtained from the illuminated characteristic is about 9% smaller than if the fill factor is calculated from the dark characteristics.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114359901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-03-01DOI: 10.1049/IJ-SSED:19790011
J. Carroll, P. Probert
The current/voltage characteristics of Si n-p-ntransistors, when the device is pulsed into second breakdown for several nanoseconds, are studied. The collector/base characteristics have limits given by Ie= 0 which can be modelled approximately by neglecting recombination, and by Ib= 0 which requires recombination to be fully understood. This later condition is closely analagous to the Kirk effect with a plasma of holes and electrons close to the base region. In all these second-breakdown states the electron multiplication factor is low, typically less than 1.33, so that there is little useful multiplication gain. Second breakdown thus prevents the transistor from being used as a 3-terminal avalanche transistor. Failure at high current levels occurs most readily in the Ie= 0 state. The cutback in voltage and increase in current can be limited by tailoring the collector impurity profile. These two features suggest ways in which transistors may be improved to protect them against short pulse burnout via current-mode second breakdown.
{"title":"Current/voltage characteristics of transistors operating in current-mode second breakdown","authors":"J. Carroll, P. Probert","doi":"10.1049/IJ-SSED:19790011","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790011","url":null,"abstract":"The current/voltage characteristics of Si n-p-ntransistors, when the device is pulsed into second breakdown for several nanoseconds, are studied. The collector/base characteristics have limits given by Ie= 0 which can be modelled approximately by neglecting recombination, and by Ib= 0 which requires recombination to be fully understood. This later condition is closely analagous to the Kirk effect with a plasma of holes and electrons close to the base region. In all these second-breakdown states the electron multiplication factor is low, typically less than 1.33, so that there is little useful multiplication gain. Second breakdown thus prevents the transistor from being used as a 3-terminal avalanche transistor. Failure at high current levels occurs most readily in the Ie= 0 state. The cutback in voltage and increase in current can be limited by tailoring the collector impurity profile. These two features suggest ways in which transistors may be improved to protect them against short pulse burnout via current-mode second breakdown.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"2 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124584254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-11-01DOI: 10.1049/IJ-SSED.1978.0057
P. Gargini, C. Morandi, P. E. Rambelli
By operating a c.c.d. delay line in integration mode, that is stopping the transfer process for a relatively long integration time and then shifting the charge packets to the output, it is possible to make evident thermal generation processes known as `dark currents'. The first part of the paper describes in detail the generation processes that take place in the structure during the integration time, in the case of uniform bulk and surface generation parameters. An experimental technique based on this mode of operation is then presented: it is shown that it allows the easy separation of bulk and surface components of the dark currents. This technique also allows the precise localisation of small electrically active defects, and some experimental results, supported by X-ray observations, are presented.
{"title":"Dark-currents characterisation in charge-coupled devices","authors":"P. Gargini, C. Morandi, P. E. Rambelli","doi":"10.1049/IJ-SSED.1978.0057","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1978.0057","url":null,"abstract":"By operating a c.c.d. delay line in integration mode, that is stopping the transfer process for a relatively long integration time and then shifting the charge packets to the output, it is possible to make evident thermal generation processes known as `dark currents'. The first part of the paper describes in detail the generation processes that take place in the structure during the integration time, in the case of uniform bulk and surface generation parameters. An experimental technique based on this mode of operation is then presented: it is shown that it allows the easy separation of bulk and surface components of the dark currents. This technique also allows the precise localisation of small electrically active defects, and some experimental results, supported by X-ray observations, are presented.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122559520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-11-01DOI: 10.1049/IJ-SSED:19780054
M. Manley, G. G. Bloodworth
The operating principles of the carrier-domain magnetometer are described. This novel semiconductor magnetic-field sensor produces output current pulses with a frequency proportional to the magnitude of the magnetic-flux density acting normally to the surface of the device. Experimental results are presented to demonstrate the sensitivity of the magnetometer. Anomalous features of device operation are explained; in particular, the existence of a threshold magnetic-flux density below which the device will not respond.
{"title":"The carrier-domain magnetometer: a novel silicon magnetic field sensor","authors":"M. Manley, G. G. Bloodworth","doi":"10.1049/IJ-SSED:19780054","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780054","url":null,"abstract":"The operating principles of the carrier-domain magnetometer are described. This novel semiconductor magnetic-field sensor produces output current pulses with a frequency proportional to the magnitude of the magnetic-flux density acting normally to the surface of the device. Experimental results are presented to demonstrate the sensitivity of the magnetometer. Anomalous features of device operation are explained; in particular, the existence of a threshold magnetic-flux density below which the device will not respond.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121973183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-11-01DOI: 10.1049/IJ-SSED:19780058
G. S. Hobson, R. Longstone, R. C. Tozer
A novel technique is described for linear sensing of charge in tapped charge-coupled devices. It uses two gates. One is biased by a voltage source and one is floating, but both are coupled by surface-potential equilibrium. It is shown, experimentally and theoretically, that this technique has better linearity and dynamic range than floating-gate sensing. It has the same ease of peripheral circuit implementation as a floating-gate structure.
{"title":"Dual-gate charge sensing in charge-coupled devices","authors":"G. S. Hobson, R. Longstone, R. C. Tozer","doi":"10.1049/IJ-SSED:19780058","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780058","url":null,"abstract":"A novel technique is described for linear sensing of charge in tapped charge-coupled devices. It uses two gates. One is biased by a voltage source and one is floating, but both are coupled by surface-potential equilibrium. It is shown, experimentally and theoretically, that this technique has better linearity and dynamic range than floating-gate sensing. It has the same ease of peripheral circuit implementation as a floating-gate structure.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124484499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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